CN101298313A - Technological process for quickly releasing edge millimeter-level large area film - Google Patents
Technological process for quickly releasing edge millimeter-level large area film Download PDFInfo
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- CN101298313A CN101298313A CNA2008100383268A CN200810038326A CN101298313A CN 101298313 A CN101298313 A CN 101298313A CN A2008100383268 A CNA2008100383268 A CN A2008100383268A CN 200810038326 A CN200810038326 A CN 200810038326A CN 101298313 A CN101298313 A CN 101298313A
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- sacrifice layer
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Abstract
The invention discloses a technique method for quickly releasing large-area millimeter-sized films. Firstly, the sacrificial layer is eroded to enlarge the contact area between substrate and erodent and improve the erosion rate of the substrate and quickly hollow the required film, especially the film with large area, such as the film with the millimeter-sized side. The method can be applied to the quick release of components with heat insulator, such as the bridge surface of the sensor of the infrared detector.
Description
Technical field
The invention belongs to detector Micrometer-Nanometer Processing Technology field, be specifically related to a kind of process of large area film of quickly releasing edge millimeter-level, it is applied to discharge fast responsive first bridge floor of Infrared Detectors, is applicable to that also all need make somebody a mere figurehead the device manufacturing of film.
Background technology
For Infrared Detectors, the area of responsive first bridge floor is big more to be absorbed to such an extent that heat is many more, and under the bridge leg situation of using same size, responsive first temperature rise is high more, the sensitivity that helps improving device.
Adopt body technology to make somebody a mere figurehead responsive first bridge floor, for example the wet etching substrate is maked somebody a mere figurehead film from the narrow corrosion substrate that meets at required membrane structure edge.The shortcoming of this method is that corrosion rate is low relatively, and the time that built on stilts film needs is long, and the time of contact of film and corrosive liquid is long, and film destroys easily.And the employing surface treatment, dry etching sacrifice layer for example, sacrifice layer is generally thinner, and film contact with substrate because stress usually bends, the thermal conductance increase of responsive unit, temperature rise sharply reduces.
Summary of the invention
The object of the present invention is to provide the method for a kind of mating surface technology and body technology, make somebody a mere figurehead the bigger film of required film, particularly area fast, for example the length of side is millimetre-sized film.
Process of the present invention is deposit one deck sacrifice layer between substrate and responsive first bridge floor, during built on stilts responsive first bridge floor, removes sacrifice layer earlier, makes no longer closely contact between substrate and the responsive first bridge floor, removes the substrate below the responsive unit then.
The process of quickly releasing edge millimeter-level film of the present invention comprises the steps:
1) deposit sacrifice layer 2 on substrate 4, and litho pattern;
2) on sacrifice layer 2, make needed membrane structure, for example responsive first bridge floor of Infrared Detectors;
3) remove sacrifice layer 2, make no longer closely contact between needed membrane structure and the substrate, remove the substrate under the needed membrane structure then, reach the purpose that discharges membrane structure.
Can adopt the silicon chip in crystal orientation 100 for step 1) substrate 4, sacrifice layer 2 can adopt polyimides, aluminium, low thermal oxidation silicon thin film, and the method for preparing sacrifice layer can be melten gel-gel method, evaporation, sputter, PECVD etc.
For step 2) in membrane structure, can be individual layer or multilayer, and its shape limit.
Can adopt wet method or dry method for removal sacrifice layer in the step 3) and the substrate under the sacrifice layer, can all adopt dry method or wet method, also can one adopt wet method and another one adopts dry method.
When the substrate under sacrifice layer 2 and the sacrifice layer all adopts wet method to remove, the corrosive liquid of corrosion sacrifice layer and the corrosive liquid that corrodes substrate can be also can be different corrosive liquids with a kind of corrosive liquid, decide according to the material of substrate, sacrifice layer and needed membrane structure.
When the substrate under sacrifice layer and the sacrifice layer all adopts dry method to remove, the etching condition of corrosion sacrifice layer and the etching condition that corrodes substrate can be also can be different etching conditions with a kind of etching condition, decide according to the material of substrate, sacrifice layer and needed membrane structure.
The invention has the advantages that: for the adiabatic film of the Infrared Detectors that is difficult to discharge, particularly big film is for example said the millimetre-sized film of the length of side, adopts the inventive method can make somebody a mere figurehead film fast, avoid needed membrane structure and substrate adhesion, avoid membrane structure to contact with substrate.
Description of drawings
Cross-sectional view after Fig. 1 deposit sacrifice layer and the topmost thin film structure; Mark is described as follows among the figure: 1---membrane structure 2---sacrifice layer 3---corrosion mouthful 4---substrate.
Fig. 2 removes the cross-sectional view behind the substrate under sacrifice layer and the sacrifice layer; Mark is described as follows among the figure: 5---the corrosion chamber.
Front plan view after Fig. 3 deposit sacrifice layer and the topmost thin film structure.
Specific implementation method
Embodiment 1
Present embodiment is a substrate with the silicon chip in crystal orientation 100, and aluminium is sacrifice layer, and the passivation layer of upper layer bridge structure is the PECVD silicon nitride.
Below for utilizing the concrete steps of the built on stilts membrane structure of the present invention:
1) evaporate aluminium film (about 200nm) as sacrifice layer in silicon chip substrate, photoetching also erodes away figure;
2) bridge construction of the responsive unit of preparation on sacrifice layer;
3) adopting TMAH (TMAH) solution is corrosive liquid (concentration is 10%, 90 ℃), and corrosion aluminium also corrodes silicon to certain depth (for example 100 μ m must corrode 2 hours approximately), bridge construction is broken away from reach built on stilts purpose with contacting of substrate;
Present embodiment is a substrate with the silicon chip in crystal orientation 100, and polyimides is a sacrifice layer, and the passivation layer of the structure of upper layer bridge is the PECVD silicon nitride.
Below for utilizing the concrete steps of the built on stilts membrane structure of the present invention:
1) at silicon chip substrate spin-on polyimide film (thickness 2 μ m) as sacrifice layer, photoetching and erode away figure after carry out imidization;
2) bridge construction of the responsive unit of preparation on sacrifice layer;
3) adopt the oxygen plasma etch polyimides, palpus is 20 minutes approximately;
4) adopt TMAH solution (concentration is 10%, 90 ℃) corrosion silicon to certain depth (for example 100 μ m must corrode 2 hours approximately), bridge construction is broken away from reach built on stilts purpose with contacting of substrate.
Claims (2)
1. the process of the large area film of a quickly releasing edge millimeter-level, it is characterized in that: it may further comprise the steps:
A. go up deposit sacrifice layer (2) at substrate (4), and litho pattern;
B. go up at sacrifice layer (2) and make needed membrane structure;
C. remove sacrifice layer (2), remove the substrate under the needed membrane structure then, discharge membrane structure.
2. the process of the large area film of a kind of quickly releasing edge millimeter-level according to claim 1 is characterized in that: material employing aluminium or the polyimides or the low thermal oxidation silicon of said sacrifice layer (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100383268A CN101298313A (en) | 2008-05-30 | 2008-05-30 | Technological process for quickly releasing edge millimeter-level large area film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100383268A CN101298313A (en) | 2008-05-30 | 2008-05-30 | Technological process for quickly releasing edge millimeter-level large area film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101298313A true CN101298313A (en) | 2008-11-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008100383268A Pending CN101298313A (en) | 2008-05-30 | 2008-05-30 | Technological process for quickly releasing edge millimeter-level large area film |
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| CN (1) | CN101298313A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103011052A (en) * | 2012-12-21 | 2013-04-03 | 上海宏力半导体制造有限公司 | Sacrificial layer of MEMS (Micro-Electro-Mechanical-System) device, MEMS device and manufacturing method thereof |
| CN106395728A (en) * | 2016-07-11 | 2017-02-15 | 中国科学院上海技术物理研究所 | Micro-bridge structure Mn-Co-Ni-O thin film infrared detector and preparation method thereof |
-
2008
- 2008-05-30 CN CNA2008100383268A patent/CN101298313A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103011052A (en) * | 2012-12-21 | 2013-04-03 | 上海宏力半导体制造有限公司 | Sacrificial layer of MEMS (Micro-Electro-Mechanical-System) device, MEMS device and manufacturing method thereof |
| CN106395728A (en) * | 2016-07-11 | 2017-02-15 | 中国科学院上海技术物理研究所 | Micro-bridge structure Mn-Co-Ni-O thin film infrared detector and preparation method thereof |
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Open date: 20081105 |