CN101276879B - Double freedom layer vertical ferromagnetism tunnel junction structure - Google Patents
Double freedom layer vertical ferromagnetism tunnel junction structure Download PDFInfo
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Abstract
A dual free layer vertical magnetic tunnel joint structure belongs to magnetic random memory technical field. The first layer of the provided dual free layer vertical magnetic tunnel joint (MTJ) structure is a bottom electrode layer on which sequentially disposed with an antimagnetic layer, a pinned layer, an insulation layer, a first free layer, a second free layer, a top electrode layer. The first free layer and the second free layer form the dual free layer structure. The pinned layer and the first free layer are magnetic anisotropy c-axis orientation film material, the second free layer is in-plane magnetic anisotropy c-axis material with anisotropy value larger than 35KA/m. The structure has characteristic of low write-in current, capable of realizing high memory accuracy, suitable for being used in devices such as novel magnetic sensor or magnetic random memory, etc.
Description
Technical field
The invention belongs to magnetic technical field of memory at random, a kind of double freedom layer vertical ferromagnetism tunnel junction (MTJ) structure particularly is provided, this new construction has low write current characteristic, can realize the superelevation storage density, will be widely applied in the devices such as novel Magnetic Sensor or magnetic random memory spare.
Technical background
Along with the continuous development of information industry, the memory technology of information there has been more and more higher requirement, expectation obtains the random asccess memory of high density more, more speed, more low-cost and low-power consumption.The computer random memory adopts the dynamic and static random access memory (DRAM and SRAM) of easily the losing property of silicon integrated circuit composition mostly at present, and the DRAM memory space is big, and price is low, but speed is slower; The speed of SRAM can reach nanosecond order, but storage density is low slightly and price is more expensive.Several years ago, the magnetoresistive memory (MRAM) that utilizes anisotropic magnetoresistance to develop to be difficult for losing property, it has characteristics such as non-destructive sense information and radiation hardness, but can't compare with DRAM with aspects such as storage speeds in memory space.The discovery of giant magnetoresistance (GMR) effect and tunnel magneto resistance (TMR) effect has brought new dawn and has made it to obtain development at a high speed to this class magnetic electron device.It is non-volatile that this MRAM has biggest advantage, can forever preserve information.In addition because advantages such as MRAM has that radiation resistance is good, volume is little, high integration and low costs, be widely used in military purposes, space flight and aviation and civilian in, in message area, bringing into play very important effect.
The memory cell of MRAM is actually the metallized multilayer film that shows the GMR effect or shows ferromagnetic tunnel junction (MTJ) structure of TMR effect.The process of storage is that the change of the magnetization orientation by metallized multilayer film realizes.The magnetization of magnetic memory is switched the field and is directly proportional with its width, and promptly along with the raising of MRAM storage density, the size of magnetic memory reduces significantly, and its switching field also increases sharply, and needed write current also increases sharply.Therefore how reducing current density, is further to improve the difficult problem that the MRAM memory space is faced thereby cut down the consumption of energy.1996, scientists proposes, when spinning current passes the single ferromagnetic layer of nano-scale or magnetic nano-pillar, can bring spin angular momentaum to shift, thereby cause magnetic to excite, even can bring upset effect [J.C.Slonczewski " Current-driven excitation of magneticmultilayers ", the Journal of Magnetism and Magnetic Materials Volume 159 of the direction of magnetization, Page L1-L9,1996].This current induced magnetization reversal (CIMS) effect is utilized electric current directly to carry out data by magnetic cell and is write, and can cut down the consumption of energy greatly.The design of MRAM not only can be simplified and improve to utilization CIMS effect significantly, and along with the reducing of memory element size, the write current of required consumption reduces on the contrary, makes to realize that high storage density becomes possibility.But generally, the needed critical current density of CIMS is up to 10
7A/cm
2, so high current density can be destroyed magnet unit.If CIMS is applied in the practical devices smoothly, critical current density must be reduced to～and 10
5A/cm
2About.Theoretical prediction shows, in MTJ isospin device, use this perpendicular magnetic anisotropy metallic film can improve the magnetic reversal rate of device, bring faster and littler magnetic cell [A.D.Kent, B.Ozyilmaz, E.del Barco, " Spin-transfer-induced precessionalmagnetization reversal ", Appl.Phys.Lett.84,3897 (2004) .].The present invention utilizes the perpendicular magnetic anisotropy mtj structure, further improved the storage organization unit of MRMA, and reduce write current density, cut down the consumption of energy greatly, make CIMS behavior better application in the MRAM structure, for the MRAM device of realizing super-high density provides may.
Summary of the invention
The object of the invention has been to provide a kind of double freedom layer vertical ferromagnetism tunnel junction (MTJ) structure with low write current characteristic, this structure can further be improved the storage organization unit of MRAM, thereby reduce write current density, cut down the consumption of energy greatly, make CIMS behavior better application in the MRAM structure, thereby realize the MRAM of super-high density.
The vertical MTJ of double freedom layer among the present invention adopts glass or monocrystalline silicon substrate, a kind of metal multi-layered film structure that is prepared from by plasma sputtering, magnetron sputtering or molecular beam epitaxial growth means is produced two electrodes at the top layer and the bottom face of metallized multilayer film respectively by the means of lithoprinting or electron beam printing, ion etching then.This MRAM device is when work, and the flow direction of signal code is perpendicular to the metallized multilayer film face.
The structure of memory cell of the present invention is illustrated in fig. 1 shown below.
The bottom of the vertical MTJ of double freedom layer is called bottom electrode layer, metallic gold etc. for example, and thickness is 10～200 nanometers.
From bottom electrode layer up the second layer be inverse ferric magnetosphere, iridium manganese alloy etc. for example, thickness is 10～20 nanometers.
From bottom electrode layer up the 3rd layer be pinning layer, the characteristics of this pinning layer chosen material are: magnetic anisotropy is the vertical face of axle easily; For example metallic cobalt/platinum composite construction, metallic cobalt/nickel composite construction, rare earth metal terbium ferro-cobalt etc.If metallic cobalt/platinum, (metallic cobalt is positioned at lower floor in the alternating structure, and metal platinum is positioned at the upper strata, as shown in Figure 2) then to replace overlapping forming by 2～20 layers metallic cobalt and metal platinum, wherein the thickness of layer of metal cobalt is 0.1～0.4 nanometer, and the thickness of metal platinum layer is 1～3 nanometer; If metallic cobalt/nickel composite construction, (metallic cobalt is positioned at lower floor in the alternating structure, and metallic nickel is positioned at the upper strata, as shown in Figure 3) then to replace overlapping forming by 2～20 layers metallic cobalt and metallic nickel, wherein the thickness of layer of metal cobalt is 0.1～0.4 nanometer, and the thickness of metal nickel dam is 1～3 nanometer; If the terbium metal ferro-cobalt, then thickness is 1～10 nanometer.
From bottom electrode layer up the 4th layer be insulating barrier, for example alundum (Al or magnesium oxide, thickness is 0.5～2.5 nanometer.
From bottom electrode layer up layer 5 be free layer 1, the characteristics of this free layer chosen material are: magnetic anisotropy is the vertical face of axle easily.For example metal platinum/cobalt composite construction, metallic nickel/cobalt composite construction, rare earth metal terbium ferro-cobalt etc.If metal platinum/cobalt, (metal platinum is positioned at lower floor in the alternating structure, and metallic cobalt is positioned at the upper strata, as shown in Figure 4) then to replace overlapping forming by 2～20 layers metal platinum and metallic cobalt, wherein the thickness of metal platinum layer is 1～3 nanometer, and the thickness of layer of metal cobalt is 0.1～0.4 nanometer; If metallic nickel/cobalt composite construction, then replace and overlappingly form that (metallic nickel is positioned at lower floor in the alternating structure by 2～20 layers metallic nickel and metallic cobalt, metallic cobalt is arranged in the upper strata shown in figure 5), wherein the thickness of metal nickel dam is 1～3 nanometer, the thickness of layer of metal cobalt is 0.1～0.4 nanometer; If the terbium metal ferro-cobalt, then thickness is 1～10 nanometer.
From bottom electrode layer up layer 6 be free layer 2, constitute the structure of double freedom layer with layer 5, the characteristics that this free layer is chosen are: magnetically anisotropic substance in the face requires the anisotropy field value greater than 35KA/m; Ferro-cobalt etc. for example, its thickness is 1～10 nanometer.
From bottom electrode layer up layer 7 be top electrode layer, metallic gold etc. for example, thickness is 10～200 nanometers.
The invention has the advantages that: adopted the double freedom layer structure, the metallic film that deposition one deck has magnetic anisotropy in the strong face on vertical face free layer.This metallic film can be to the magnetic moment generation effect of free layer, make its magnetic moment produce, and has therefore significantly reduced among the MTJ magnetic moment required critical current that overturns, and has reduced energy loss, for the MRAM that realizes super-high density provides may.
Description of drawings
Fig. 1 double freedom layer MTJ schematic diagram
Fig. 2 platinum/cobalt alternating structure schematic diagram
Fig. 3 cobalt/nickel alternating structure schematic diagram
Fig. 4 cobalt/platinum alternating structure schematic diagram
Fig. 5 nickel/cobalt alternating structure schematic diagram
Embodiment
According to said structure, utilize the method for magnetic control sputtering device or molecular beam epitaxy to prepare following 44 kinds of MTJ multi-layer film structures, and adopt the method for electron beam printing and ion etching to prepare the MTJ device: to be characterized in that operating current is perpendicular to the plane, and pinning layer is the easily vertical face of axle of magnetic anisotropy with free layer 1, and free layer 2 is the easily parallel face of axle of magnetic anisotropy.The detailed preparation technology of MT reconnaissance J is: sputtering chamber base vacuum degree is 2 * 10
-5Pa, argon gas during sputter (99.99%) press and are 0.5Pa; Substrate is cooled with circulating water, and is added with the magnetic field of 50Oe for pinning layer and free layer 1 perpendicular to the substrate direction, to bring out vertical direction of easy axis; Free layer 2 is parallel to the magnetic field that the substrate direction is added with 250Oe, to bring out parallel direction of easy axis.Because the iridium manganese alloy do not need to carry out annealing in process, carry out when therefore whole sputter procedure remains on 25 ℃ of room temperatures, during sputter,, keep each layer sputter rate to be controlled at by changing power
By test, above-mentioned device all can realized CIMS in varying degrees, and needed write current density all is lower than 1 * 10
6Every square centimeter of ampere.Low like this write current density makes this structure can be used among the MRAM fully, and realizes Ultrahigh-Density Data Storage by CIMS.
Claims (6)
1. double freedom layer vertical ferromagnetism tunnel junction structure is characterized in that:
A. the bottom is a bottom electrode layer, and thickness is 10～200 nanometers;
B. the end of from up the second layer be inverse ferric magnetosphere, thickness is 10～20 nanometers;
C. the end of from up the 3rd layer be pinning layer, described pinning layer is an easily axle vertical film flooring of magnetic anisotropy;
D. the end of from up the 4th layer be insulating barrier, thickness is 0.5～2.5 nanometer;
E. the end of from up layer 5 be the 1st free layer, thickness is 1～10 nanometer;
F. the end of from up layer 6 be the 2nd free layer, thickness is 1～10 nanometer;
G. the end of from up layer 7 be top electrode layer, thickness is 10～200 nanometers;
Wherein said layer 5 and described layer 6 constitute the double freedom layer structure, and described the 1st free layer is an easily axle vertical film flooring of magnetic anisotropy, and described the 2nd free layer is that anisotropy value is greater than magnetically anisotropic substance in the face of 35KA/m.
2. according to the described structure of claim 1, it is characterized in that: described pinning layer is selected from least a in the following structure: metal platinum/cobalt composite construction, metallic nickel/cobalt composite construction, rare earth metal terbium ferro-cobalt structure.
3. according to the described structure of claim 2, it is characterized in that: described metal platinum/cobalt composite construction is for replacing overlapping forming by 2～20 layers metal platinum and metallic cobalt; Wherein the bottom is a metal platinum, and top layer is a metallic cobalt, and wherein the thickness of each layer metal platinum layer is 1～3 nanometer, and the thickness of each layer layer of metal cobalt is 0.1～0.4 nanometer.
4. according to the described structure of claim 2, it is characterized in that: described metallic nickel/cobalt composite construction is for replacing overlapping forming by 2～20 layers metallic nickel and metallic cobalt, wherein the bottom is a metallic nickel, top layer is a metallic cobalt, and the thickness of metal nickel dam is 1～3 nanometer, and the thickness of layer of metal cobalt is 0.1～0.4 nanometer.
5. according to the described structure of claim 2, it is characterized in that: described rare earth metal terbium ferro-cobalt thickness of structure is 1～10 nanometer.
6. according to the described structure of one of claim 1-5, it is characterized in that: have low write current characteristic, in order to constitute magnetoresistive memory cell.
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101866738B (en) * | 2009-04-17 | 2012-06-27 | 中国科学院物理研究所 | Perpendicular magnetic anisotropic multi-layered film |
| JP2011008861A (en) * | 2009-06-25 | 2011-01-13 | Sony Corp | Memory |
| US8705213B2 (en) * | 2010-02-26 | 2014-04-22 | Seagate Technology Llc | Magnetic field detecting device with shielding layer at least partially surrounding magnetoresistive stack |
| CN102810630B (en) * | 2011-05-30 | 2015-11-25 | 中国科学院物理研究所 | Magnetic film structure, magneto-dependent sensor and preparation method that anisotropy can be modulated |
| CN105374934B (en) * | 2015-12-01 | 2018-02-06 | 中电海康集团有限公司 | A kind of stress assisted spin transfer moment of torsion magneto-resistor random access memory and its preparation, application method |
| KR102182095B1 (en) * | 2016-07-12 | 2020-11-24 | 한양대학교 산학협력단 | 3-Dimensional Magneto-Sensor |
| US10056430B1 (en) * | 2017-10-25 | 2018-08-21 | Sandisk Technologies Llc | MRAM with voltage dependent in-plane magnetic anisotropy |
| CN108987031B (en) * | 2018-07-06 | 2019-10-18 | 西安交通大学 | A kind of magnetic funnel node device and its magnetic random storage device |
| CN112802959A (en) * | 2019-11-13 | 2021-05-14 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure and magnetic random access memory |
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Application publication date: 20081001 Assignee: JIANGSU OLIVE SENSORS HIGH-TECH Co.,Ltd. Assignor: University of Science and Technology Beijing Contract record no.: 2015320000241 Denomination of invention: Double freedom layer vertical ferromagnetism tunnel junction structure Granted publication date: 20100609 License type: Exclusive License Record date: 20150416 |
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