CN101206411B - Method for preparing sub-wavelength micro noy structure by forming using focused light - Google Patents
Method for preparing sub-wavelength micro noy structure by forming using focused light Download PDFInfo
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- CN101206411B CN101206411B CN2007101775591A CN200710177559A CN101206411B CN 101206411 B CN101206411 B CN 101206411B CN 2007101775591 A CN2007101775591 A CN 2007101775591A CN 200710177559 A CN200710177559 A CN 200710177559A CN 101206411 B CN101206411 B CN 101206411B
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Abstract
The invention provides a method to carve a sub-wavelength Micro-Nano structure with focusing light, which is characterized in that a suitable substrate material is selected first; a layer of slushing compound is coated on the surface of the substrate; a layer of metal is evaporated on the surface of the slushing compound; a lenticule array structure is applied to focus and expose on the structure;the lenticule array structure is moved and the metal layer structure is removed; the slushing compound is developed to obtain the target structure; the target structure is carded finally and transmit ted to the substrate. The invention is used to conduct secondary modulation on the focused light field by adding a metal layer structure at the bottom of the slushing compound so as to further reduce the dimension of the focal spot so as to further reduce the dimension of the target structure to be produced, which provides a better method to produce the Micro-Nano structure.
Description
Technical field
The present invention relates to a kind of method for making of micro-nano structure, particularly a kind of method for making of using the focused photoetching form sub-wavelength micro-nano structure.
Background technology
In recent years, along with developing rapidly of micro-nano process technology and nano material, the electromagnetic property of micro-nano metal construction is just receiving increasing concern; The interaction of light and surperficial micro-nano metal construction has produced a series of new unusual physical phenomenons, for example, French scientist Ebbesen in 1998 and co-worker thereof find the unusual enhancing phenomenon (Extraordinary Optical Transmission) by the light of sub-wavelength metallic hole array; People's such as H.J.Lezec research further shows: when light transmission sub-wavelength metal nano-pore, its transmitance not only can be enhanced, and the angle of diffraction of light beam is very little, and the diffraction law in the common dielectric medium structure is not followed in transmission direction.In addition, relevant new phenomenon with the surface plasma metal micro-nanostructure also has: after the metal micro structure effect of light and special distribution, occur along the characteristic of left hand rule propagation, illustrative material has negative index; Light is by behind the special metal nano-pore structure, and the light wave outgoing has fabulous directivity or the like.The research of micro-nano metal structure surface plasma wave has formed a new field, can be widely used in a plurality of fields such as military affairs, medical treatment, national security based on the novel surface plasma technique of micro-nano metal construction.
The focused photoetching method has developed into a kind of photoetching method of making microstructure gradually, this method focuses on by adopting microlens structure, utilize the high value of focus place energy to carry out photoetching, thereby on resist, be shaped micro-nano structure, but this method is in manufacturing process, because focal spot size is subjected to the restriction of diffraction limit, thereby the size of making figure that makes is restricted, and has brought very big difficulty for shaping small scale nanostructured.
Summary of the invention
The technical problem to be solved in the present invention is: at focal spot size in the focused photoetching method owing to be subjected to the restriction of diffraction limit, thereby can't be on photoresist the problem of shaping smaller szie micro-nano structure, proposed a kind of by improving resolution, reduce focal spot size, adopt the method for making of focused photoetching form sub-wavelength micro-nano structure.
The technical solution adopted for the present invention to solve the technical problems: adopt the method for making of focused photoetching form sub-wavelength micro-nano structure, it is characterized in that step is as follows:
(1) selects suitable base material;
(2) at substrate surface spin coating one deck resist;
(3) the evaporation layer of metal again on the resist surface; The material of described metal level be can excitating surface plasma metal gold, silver, copper or aluminium;
(4) select suitable microlens array structure that step (3) resulting structures is focused on exposure,, utilize the surface plasma that inspires to distribute at the inner exposure energy that needs that forms of resist by regulating the time shutter;
(5) remove microlens array structure after the exposure, and then remove metal-layer structure;
(6) select the developer solution that is complementary with resist, the resist of substrate surface is developed, obtain object construction;
(7) object construction is carried out etching, structure is delivered in the substrate.
Base material in the described step (1) is a visible light material silicon dioxide, quartz, K9 glass, infra-red material silicon, germanium.
The resist of spin coating is positive corrosion-resisting agent or negative resist in the described step (2).
Metal layer thickness is 10nm～100nm in the described step (3).
Focusing exposure in the described step (4) makes it equal lenticular focal length for regulating the distance between microlens array structure and the resist top layer, thereby realizes focusing on exposure.
The time shutter of focusing in the described step (4) exposure is 3 seconds to 3 minute.
Microlens array structure in the described step (4) is the arrangement mode of prismatic lens, square lens or lens ring.
Adopt wet etching to remove metal-layer structure in the described step (5), the raw material of wet etching is selected according to concrete metal material.
Object construction in the described step (6) is corresponding to microlens array structure.
Adopt RIE to carry out etching in the described step (7), etching gas is selected according to base material, and etching time is determined according to the thickness and the substrate of resist, is 1 minute to 60 minutes.
The advantage that the present invention is compared with prior art had is: by the metal-layer structure that adds at the lenticule bottom, can carry out secondary modulation to the light field after focusing on, further reduce the size of focal beam spot, therefore can further reduce the size of the object construction made, for the making of micro nano structure provides good method.
Description of drawings
Fig. 1 is selected underlying structure synoptic diagram;
Fig. 2 is the structural representation after the spin-coating erosion resistant agent on substrate;
Fig. 3 is the structural representation after the evaporation metal silver on resist;
Fig. 4 adopts micro lens array the structure among Fig. 3 to be focused on the synoptic diagram of exposure;
Fig. 5 is for adopting the structural representation after salpeter solution erodes the argent structure after the exposure;
Fig. 6 is the structural representation after developing;
Fig. 7 is delivered to suprabasil structural representation for adopting the RIE etching with structure;
Among the figure: 1 is base material silicon dioxide, and 2 is the resist AZ3100 of 200nm, and 3 is the 40nm argent of evaporation, and 4 for having the microlens array structure of focussing force, and 5 is exposure light source.
Embodiment
The present invention is described in detail below in conjunction with embodiment and accompanying drawing; but protection scope of the present invention is not limited in the following example; should comprise the full content in claims, and those skilled in the art can realize full content the claim from following examples.
Following embodiment has provided and has used method shaping sub-wavelength micro-nano structure of the present invention, and its concrete steps are as follows:
(1) selects silicon dioxide SiO for use
2Be base material, as shown in Figure 1;
(2) the AZ3100 resist of spin coating ground floor 200nm in substrate, as shown in Figure 2;
(3) argent of evaporation 40nm again on the resist surface, as shown in Figure 3;
(4) adopting bore is 1000um, rise is that the microlens array structure of 1.54um focuses on exposure to the resist of spin coating silver layer, this micro lens array is that square is arranged, its focal length is 177mm, so regulating microlens array structure is 177mm with the distance between the resist top layer, light source is the ultraviolet light of predominant wavelength 365nm, and the time shutter is 12s, as shown in Figure 4;
(5) remove silver coating structure with salpeter solution, as shown in Figure 5;
(6) select for use the AZ300 developer solution that resist is developed, development time is 30s, obtains object construction, as shown in Figure 6;
(7) adopt RIE that etching is carried out in substrate, etching gas is sulfur hexafluoride SF
6With oxygen O
2, etching time is 3 minutes, and object construction is delivered to silicon dioxide SiO
2In the substrate, as shown in Figure 7.
Claims (10)
1. method for making that adopts the focused photoetching form sub-wavelength micro-nano structure is characterized in that following steps:
(1) selects suitable base material;
(2) at substrate surface spin coating one deck resist;
(3) the evaporation layer of metal layer again on the resist surface; The material of described metal level be can excitating surface plasma metal gold, silver, copper or aluminium;
(4) select suitable microlens array structure that step (3) resulting structures is focused on exposure,, utilize the surface plasma that inspires to distribute at the inner exposure energy that needs that forms of resist by regulating the time shutter;
(5) remove microlens array structure after the exposure, and then remove metal-layer structure;
(6) select the developer solution that is complementary with resist, the resist of substrate surface is developed, obtain object construction;
(7) object construction is carried out etching, structure is delivered in the substrate.
2. a kind of method for making that adopts the focused photoetching form sub-wavelength micro-nano structure according to claim 1 is characterized in that, the base material in the described step (1) is a visible light material silicon dioxide, quartz, K9 glass, infra-red material silicon, germanium.
3. a kind of method for making that adopts the focused photoetching form sub-wavelength micro-nano structure according to claim 1 is characterized in that, the resist of spin coating is positive corrosion-resisting agent or negative resist in the described step (2).
4. a kind of method for making that adopts the focused photoetching form sub-wavelength micro-nano structure according to claim 1 is characterized in that, metal layer thickness is 10nm～100nm in the described step (3).
5. a kind of method for making that adopts the focused photoetching form sub-wavelength micro-nano structure according to claim 1, it is characterized in that, focusing exposure in the described step (4) is for regulating the distance between microlens array structure and the resist top layer, make it equal lenticular focal length, thereby realize focusing on exposure.
6. a kind of method for making that adopts the focused photoetching form sub-wavelength micro-nano structure according to claim 1 is characterized in that, the time shutter of focusing in the described step (4) exposure is 3 seconds to 3 minute.
7. a kind of method for making that adopts the focused photoetching form sub-wavelength micro-nano structure according to claim 1 is characterized in that the microlens array structure in the described step (4) is the arrangement mode of prismatic lens, square lens or lens ring.
8. a kind of method for making that adopts the focused photoetching form sub-wavelength micro-nano structure according to claim 1 is characterized in that, adopts wet etching to remove metal-layer structure in the described step (5), and the raw material of wet etching is selected according to concrete metal material.
9. a kind of method for making that adopts the focused photoetching form sub-wavelength micro-nano structure according to claim 1 is characterized in that the object construction in the described step (6) is corresponding to microlens array structure.
10. a kind of method for making that adopts the focused photoetching form sub-wavelength micro-nano structure according to claim 1, it is characterized in that, adopt RIE to carry out etching in the described step (7), etching gas is selected according to base material, etching time is determined according to the thickness and the substrate of resist, is 1 minute to 60 minutes.
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| CN102169928B (en) * | 2011-02-14 | 2012-12-19 | 中国科学院光电技术研究所 | Manufacturing method of LED (Light Emitting Diode) lamp anti-reflection micronano structure |
| CN111591954B (en) * | 2020-01-19 | 2024-02-23 | 中国科学技术大学 | Method for preparing sub-wavelength nano structure on photoresist surface |
| CN111640651A (en) * | 2020-01-19 | 2020-09-08 | 中国科学技术大学 | Sub-wavelength surface nano structure based on ion bombardment technology and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1553284A (en) * | 2003-05-29 | 2004-12-08 | 中国科学院光电技术研究所 | Wavelength or long wavelength optical contact approach nanometer photoetching optical apparatus |
| CN1646992A (en) * | 2002-04-15 | 2005-07-27 | 皇家飞利浦电子股份有限公司 | Method of forming optical images |
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| CN1646992A (en) * | 2002-04-15 | 2005-07-27 | 皇家飞利浦电子股份有限公司 | Method of forming optical images |
| CN1553284A (en) * | 2003-05-29 | 2004-12-08 | 中国科学院光电技术研究所 | Wavelength or long wavelength optical contact approach nanometer photoetching optical apparatus |
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