CN101122677B - Manufacturing method for variable shape mirror - Google Patents
Manufacturing method for variable shape mirror Download PDFInfo
- Publication number
- CN101122677B CN101122677B CN2007101413853A CN200710141385A CN101122677B CN 101122677 B CN101122677 B CN 101122677B CN 2007101413853 A CN2007101413853 A CN 2007101413853A CN 200710141385 A CN200710141385 A CN 200710141385A CN 101122677 B CN101122677 B CN 101122677B
- Authority
- CN
- China
- Prior art keywords
- wafer
- mirror
- piezoelectric element
- substrate
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/06—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the phase of light
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S359/00—Optical: systems and elements
- Y10S359/90—Methods
Abstract
Manufacturing method for variable shape mirrors suitable for mass production includes steps: for forming first grooves 21 and second grooves 31 along boundaries between areas to be variable shape mirrors 1 on a surface of first wafer 20 to be support substrate 2 and a surface of second wafer 30 to be mirror substrate 3; for arranging first and second wafer so that support pillars 5 and piezoelectric elements 4 are sandwiched between first and second wafer at areas with surface on which second grooves are formed facing inward for bonding; for dividing second wafer into mirror substrates by flattening process of outer surface of second wafer until at least reaching second groove; for dividing first wafer into the support substrates by breaking first wafer along first grooves; and for forming reflection film 6 on outer surface of each of mirror substrates obtained by the dividing step.
Description
Technical field
The present invention relates to a kind of manufacture method of deformable mirror, described deformable mirror is contained on the optic pick-up.
Background technology
Usually, compact disk (CD) or digital versatile dish (DVD) can be on market as the information of optical record medium record such as image and sound.And in the last few years, DVD of new generation was just in commercialization, and its use has short wavelength's violet laser Shu Shixian higher density record.In order to use such CD, need compact disk equipment as drive unit.Described compact disk equipment drives the CD rotation and makes laser beam be mapped to the recording surface of CD, writes down thus or erasure information, and reappears described information according to the reflected light of recording surface.And then in order to realize such function, compact disk equipment is equipped with optic pick-up with one group of unit as emission of lasering beam, makes the recording surface of laser beam directive CD and forms the bundle spot, and receives reflected light from the video disc recording surface.
Here, optic pick-up particularly according to its standard that satisfies, is applicable to the DVD of new generation of high-NA (NA), and when disk thickness was changed significantly, the influence of the spherical aberration that is produced can become obviously, like this may not can obtain the tuftlet spot.Therefore, beating of reproducing signal can worsen, and the record peak power reduces, thereby causes writing down the decline with reproduction quality.
In addition, the factors such as warpage owing to CD cause the optical axis of laser beam with respect to the faint inclination of recording surface.Like this, thereby the light path of laser beam is bent the generation coma aberration, and it makes laser beam be difficult to be focused into suitable spot diameter, the result, and record and reproduction quality worsen.The deterioration of record and reproduction quality also has other factors, comprises for example bearing accuracy that causes astigmatic difference of optical system such as optical lens or optical splitter, and described optical lens or optical splitter are the elements of optic pick-up.
In order to prevent above-mentioned situation, a kind of deformable mirror is provided, can correct such as wave aberrations such as spherical aberration (wave aberration).For example, as described in Figure 4, in optical system, use the optic pick-up of deformable mirror 1 to make by semiconductor laser 12, collimation lens 13, optical splitter 14, deformable mirror 1, quarter-wave plate 15, object lens 16, collector lens 17, photoelectric detector 18 etc.The laser beam of sending from semiconductor laser 12 changes parallel beam into by collimation lens 13, this parallel beam is by optical splitter 14, after changing its polarization state, reflected by deformable mirror 1, and focus on by object lens 16 on the recording surface of CD D via quarter-wave plate 15.And then,, reflected by object lens 16 from the recording surface laser light reflected bundle of CD D, again by quarter-wave plate 15, subsequently by optical splitter 14 reflections, again by collector lens 17 optically focused and guide to photoelectric detector 18 at last by deformable mirror 1.
For deformable mirror 1, one type of feature (for example JP-A-2004-109769 and JP-A-2004-226457) that has adopted the piezoelectric element of being made by piezoelectric is arranged.This deformable mirror 1 generally support by supporting substrate, supported post and the mirror substrate relative with supporting substrate and be clipped in supporting substrate and the mirror substrate between piezoelectric element form.The outside surface of mirror substrate is provided with reflectance coating with the reflecting surface as laser beam.When piezoelectric element being applied predetermined voltage with the formation electric field, piezoelectric element expands between supporting substrate and mirror substrate or shrinks, and the mirror substrate is along with this expansion or shrink elastic deformation, reflectance coating, that is and, reflecting surface is out of shape along with the mirror substrate deformation.
Under this environment, do not set up the method that is suitable for making on a large scale this deformable mirror.For example, under present circumstances,, there is a kind of method to comprise the following steps: on wafer, to form the single part of deformable mirror, and cuts this wafer to be divided into single deformable mirror in order to make a large amount of deformable mirrors simultaneously.In the method, need preparation will become the different wafer of supporting substrate and mirror substrate, and support column and piezoelectric element are clipped among the zone that will become single deformable mirror of described wafer.Then, these two wafers and support column and this two wafers and piezoelectric element are bonded with each other respectively.Afterwards, with the zone boundary cutting crystal wafer of wafer, make it be divided into single deformable mirror with dish type scribing machine (dicing saw) along single deformable mirror.Then, the outside surface at the mirror substrate of each deformable mirror forms reflectance coating.Therefore, can obtain a plurality of deformable mirrors simultaneously at least.
Yet according to this method, owing to can produce local residual stress in junction surface between wafer that will become the mirror substrate and support column and the junction surface between this wafer and piezoelectric element, wafer can be distorted.If wafer forms the mirror substrate at last, this distortion meeting just can not get suitable reflecting surface this moment in the reflectance coating that remains in the formation of mirror outer surface of substrate.Like this, the productive rate of the deformable mirror of gained (qualification rate) can descend, and therefore, the method is unsuitable for large-scale production.
In addition, when with the scribing machine cutting crystal wafer, wafer, particularly the wafer as the mirror substrate may damage because of cracked (chipped) or rupture (broken) under many circumstances.This be because: since require mirror substrate (that is, its wafer) along with the expansion of piezoelectric element and contraction and elastic deformation to play the effect of above-mentioned deformable mirror, cause wafer at first to be flimsy.So just reduced the productive rate of the deformable mirror that is obtained, so this method still is unsuitable for large-scale production.
If excise the mirror substrate that will become each deformable mirror from wafer in advance, and use the mirror substrate of chip-scale (chip level) relative with the supporting substrate of wafer scale (wafer level), make the part that will become each deformable mirror, so the time, can reduce much the damage of mirror substrate with scribing machine cutting (as supporting substrate) wafer.But in the case, can increase as the quantity of the chip-scale mirror substrate of element, and its tissue and handle and all be unequal to its lotus, and then limited the manufacturing efficient of deformable mirror, so this method still is unsuitable for large-scale production.
Summary of the invention
In view of the above problems, an object of the present invention is to provide a kind of manufacture method of deformable mirror, it is suitable for large-scale production.
For achieving the above object, the manufacture method of deformable mirror according to a first aspect of the invention, wherein each deformable mirror comprises: supporting substrate; The mirror substrate, described mirror substrate is relative with supporting substrate and supported and had reflectance coating on the surface by support column; And piezoelectric element, described piezoelectric element is clipped between supporting substrate and the mirror substrate; When applying electric field, piezoelectric element expansion or contraction are so that mirror substrate and reflectance coating distortion; Described manufacture method comprises following feature: the groove of first wafer forms step, forms first groove along the border between the zone that will become deformable mirror on the surface of first wafer, and described first wafer will be as described supporting substrate; Form the second wafer groove step, form second groove along the border between the zone that will become deformable mirror on the surface of second wafer, described second wafer will become the mirror substrate; Engagement step, first wafer and second wafer are set, support column and piezoelectric element are clipped between the above-mentioned zone of first wafer and second wafer, and the surface that forms described second groove inwardly, so that major general's first wafer and support column, first wafer and piezoelectric element, second wafer and support column are bonded with each other; The second wafer segmentation procedure is divided into mirror substrate up to arriving at second groove at least with second wafer by the second wafer outside surface is carried out planarization (flatteningprocess); The first wafer segmentation procedure by first wafer that fractures along first groove, is divided into supporting substrate with first wafer; And reflectance coating formation step, on the outside surface of each the mirror substrate that obtains by described segmentation procedure, form reflectance coating.
According to this structure, reflectance coating forms on mirror substrate flat outer surface.Therefore, the reflecting surface of reflectance coating also is flat, therefore can obtain many deformable mirrors with good quality simultaneously.
In manufacture method according to a second aspect of the invention, preferably this planarization is polishing or etch processes.
In manufacture method according to a third aspect of the invention we, preferably thin metal layer is arranged on bonding part between first wafer and the support column and the bonding part between first wafer and the piezoelectric element, described first wafer and described support column and described first wafer and described piezoelectric element mutual extrusion when being heated, thus be bonded with each other.
In manufacture method according to a forth aspect of the invention, preferably thin metal layer is arranged on bonding part between second wafer and the support column and the bonding part between second wafer and the piezoelectric element, described second wafer and described support column and described second wafer and described piezoelectric element be mutual extrusion when heating, thereby is bonded with each other.
In manufacture method according to a fifth aspect of the invention, preferably first wafer is configured such that described first wafer formation first groove the surface inwardly.
According to the manufacture method of deformable mirror of the present invention, can obtain many deformable mirrors simultaneously, and this method is enough to adapt to large-scale production with good quality.
Description of drawings
Figure 1A and Figure 1B are the sectional views of the deformable mirror made of manufacture method according to an embodiment of the invention.
Fig. 2 is the exploded perspective view of deformable mirror, so that its primary structure to be shown;
Fig. 3 A～Fig. 3 E is the sectional view of deformable mirror, so that the process according to the manufacture method of the deformable mirror of the embodiment of the invention to be shown;
Fig. 4 is the planimetric map of primary structure that adopts the optic pick-up of deformable mirror.
Embodiment
Hereinafter embodiments of the invention will be described with reference to the accompanying drawings.Figure 1A and Figure 1B are the sectional views according to the deformable mirror of the manufacture method manufacturing of the embodiment of the invention.Figure 1A illustrates not driving condition, and Figure 1B illustrates driving condition.Fig. 2 is the exploded perspective view of deformable mirror, and so that its primary structure to be shown, and Fig. 3 A～Fig. 3 E is the sectional view of deformable mirror, so that the process according to the manufacture method of embodiments of the invention deformable mirror to be shown.Deformable mirror 1 in the present embodiment at first is described.As Figure 1A and shown in Figure 2, deformable mirror 1 in the present embodiment comprises the basic square supporting substrate 2 that is, relative with supporting substrate 2, be square mirror substrate 3 than smaller basic of supporting substrate 2, be clipped in a plurality of piezoelectric elements 4 and a plurality of support column 5 between supporting substrate 2 and the mirror substrate 3 in the precalculated position.The deformable mirror 1 of present embodiment comprises 4 angles that are located at mirror substrate 3 as shown in Figure 2 and is substantially disposed in the middle support column 5 of its four edges, is set in place the piezoelectric element 4 in precalculated position in the support column 5 on four edges.In other words, piezoelectric element 4 and support column 5 outwards are criss-cross order setting with the center from mirror substrate 3.
Supporting substrate 2 is in order to support the substrate of discrete component.Glass can be as the material of supporting substrate 2.Yet,, also can use for example other materials of pottery etc. as long as have insulating property.Supporting substrate 2 has the film portion of being made by silicon (Si), and it is formed in the surface towards mirror substrate 3 (that is inside surface) of supporting substrate 2 and is provided with on the position (dash area among Fig. 2) of piezoelectric element 4 and support column 5.Particularly, the wiring pattern (not shown) made by Si is equally guided near the edge of supporting substrate 2 by being positioned at the locational Si film portion that is provided with piezoelectric element 4.Notice that Si film portion and Si wiring pattern are by photoetching formation such as (photo lithography).
The Si film portion of the inside surface by being clipped in supporting substrate 2 and the thin metal layer part (not shown) between each piezoelectric element 4, each piezoelectric element 4 joins on the Si film portion.Can use Au (gold) as one of material of this thin metal layer part, and the thin metal layer part is formed on the Si film portion of inside surface of supporting substrate 2 by vapour deposition or sputter etc.Yet except Au, thin metal layer partly also can be made by Pt (platinum) etc.In this embodiment, when heating, with supporting substrate 2 and each piezoelectric element 4 mutual extrusion, metal (Au) atom diffusion that makes the thin metal layer part between them is in the Si film portion of the inside surface of supporting substrate 2 and in the piezoelectric element 4 (PZT).Therefore, supporting substrate 2 and each piezoelectric element 4 positive engagement in the diffusion knot.
Use the same method, mirror substrate 3 relies on thin metal layer part (not shown) to engage by the diffusion knot with each piezoelectric element 4.Described thin metal layer part is formed on the inside surface of mirror substrate 3 by vapour deposition or sputter etc.
Therefore, in the present embodiment, the Si film portion on the inside surface of supporting substrate 2 and each piezoelectric element 4 are electrically connected by thin metal layer, make it as the absolute electrode that each piezoelectric element 4 is applied electric field.On the other hand, the mirror substrate of being made by Si 3 and each piezoelectric element 4 are electrically connected by thin metal layer, make it as the common electrode that each piezoelectric element 4 is applied electric field.
Though, use thin metal layer as a kind of cementing agent that supporting substrate 2 and each piezoelectric element 4, mirror substrate 3 and each piezoelectric element 4 are engaged in the diffusion knot in the present embodiment, also can use conductive adhesive that it is engaged.Can also use non-conductive cementing agents such as epoxies that it is engaged in addition, but in this case, must be between the Si wiring pattern of the Si film portion on the inside surface of supporting substrate 2 and piezoelectric element 4 and the mirror substrate of making by Si and piezoelectric element 4 between be electrically connected by extra modes such as wire-bonded.
Though, be bonded with each other by mirror substrate 3 and piezoelectric element 4 in the present embodiment, also can use the piezoelectric element of for example folding 4 from the lamination electric device conduct of both sides extraction electrode.Like this, if the Si film portion on the inside surface of supporting substrate 2 is divided into two parts, thereby each Si film portion is connected with each electrode of stacked piezoelectric element, and can applies electric field each piezoelectric element 4.Like this, it need not be bonded with each other with regard to being enough between mirror substrate 3 and piezoelectric element 4, form simple contact condition.
For deformable mirror 1 with said structure, shown in Figure 1A,, that is, each piezoelectric element 4 is not applied under the state of voltage at driving condition not, the reflecting surface of the reflectance coating 6 of mirror substrate 3 is flat.On the other hand, shown in Figure 1B, when forming driving electric field when piezoelectric element 4 is applied predetermined voltage, each piezoelectric element 4 expands between supporting substrate 2 and mirror substrate 3.Be accompanied by this expansion, mirror substrate 3 is upwards pushed and makes its elastic deformation become convex, and the reflecting surface of reflectance coating 6 is out of shape along with the distortion of mirror substrate 3.Therefore, in the optical system of optic pick-up, use above-mentioned deformable mirror 1 just can correct the wave aberration of laser beam.
Below, will explain the manufacture method of above-mentioned deformable mirror.At first, as shown in Figure 3A, preparation is as the wafer 20 (back is called " first wafer ") of supporting substrate 2 with as the wafer 30 (back is called " second wafer ") of mirror substrate 3.
On first wafer, 20 surfaces, form groove 21 (back is called " first groove ") along the interregional border that will become single deformable mirror 1.For example, if the zone that will become single deformable mirror 1 for first wafer 20 as the neat setting of grid, then first groove 21 of Xing Chenging is just as grid.First groove 21 forms with the constant degree of depth, and its degree of depth can not cause first wafer 20 to break suddenly in the engagement step of itself and piezoelectric element 4 and the support column 5 that carry out in the back or in the segmentation procedure of second wafer 30.For example, if first wafer 20 is to be that the glass of 1mm is made by thickness, the part that is preferably formed first groove 21 should keep about material thickness of 1/3 to 1/2.First groove 21 can use modes such as scribing machine, chemical etching, sandblast to form.Note, in the present embodiment, in the zone that will become above-mentioned single deformable mirror 1 on the surface that forms first groove 21, Si film portion, Si wiring pattern and thin metal layer part are set, constitute the structure of deformable mirror 1.
On the other hand,, form groove 31 (back is called " second groove ") along the interregional border that will become single deformable mirror 1 on second wafer, 20 surfaces, corresponding with first groove 21 that on first wafer 20, forms.For example, if the zone that will become independent deformable mirror 1 for second wafer 30 as the neat setting of grid, then second groove 31 of Xing Chenging is also as grid.Second groove 31 forms with the constant degree of depth, breaks suddenly in the engagement step of itself that the degree of depth of second groove 31 can not cause that second wafer 30 carries out in the back and piezoelectric element 4 and support column 5.For example, if second wafer 30 is to be that the Si of 200 μ m makes by thickness, the part that is preferably formed second groove 31 keeps about material thickness of 2/5 to 3/5.Second groove 31 can be formed by modes such as scribing machine, chemical etching, sandblasts.If second wafer 30 is made by Si, preferably use reactive ion etching (RIE) to form second groove 31.Note in the present embodiment, also having the thin metal layer part that is formed on as in the zone of above-mentioned single deformable mirror 1 on the surface that forms second groove 31, wherein, the zone of above-mentioned single deformable mirror 1 constitutes the structure of deformable mirror 1.
Below, shown in Fig. 3 B, first wafer 20 and second wafer 30 are set, the surface that makes first wafer 20 that forms first groove 21 and the surface of second wafer 30 that forms second groove 31 toward each other, first groove 21 and second groove 31 are corresponding mutually simultaneously.In other words, the surface of first wafer 20 be formed with first groove 21 and the surface of second wafer 30 that is formed with second groove 31 are set make them towards interior and relative, under this state, the zone that will become single deformable mirror 1 also toward each other.Herein, support column 5 and piezoelectric element 4 are clipped among the part of the single deformable mirror 1 of formation between first wafer 20 and second wafer 30.Then, first wafer 20 engages respectively with piezoelectric element 4 with support column 5, second wafer 30 with piezoelectric element 4, second wafer 30 with support column 5, first wafer 20.In the present embodiment, when heating, first wafer 20 and support column 5, first wafer 20 and piezoelectric element 4, second wafer 30 and support column 5, second wafer 30 and piezoelectric element 4 mutual extrusion make win wafer 20 and support column 5, first wafer 20 and piezoelectric element 4, second wafer 30 and support column 5, second wafer 30 and piezoelectric element 4 positive engagement in the diffusion knot.
In this way, after first wafer 20, second wafer 30, piezoelectric element 4 and support column 5 are bonded with each other, between second wafer 30 and support column 5, second wafer 30 and piezoelectric element 4, can produce local unrelieved stress.This unrelieved stress can mainly produce distortion in second wafer 30, thereby makes second wafer 30 be the minor swing state under many circumstances.Fig. 3 B shows the state after its amplification.If second wafer 30 keeps distortion when finally becoming mirror substrate 3, the reflectance coating 6 that forms at its outside surface also can keep distortion, thereby just can not obtain suitable smooth reflecting surface.Therefore, in the present embodiment, can eliminate such distortion as follows.
Shown in Fig. 3 C, planarization is carried out in the whole zone of the outside surface of second wafer 30, up to arriving at second groove 31, this planarization can be polishing or etch processes by surface finish.In the processing in front, push the whole zone of the outside surface of second wafer 30 with dull and stereotyped emery wheel, and make its outside surface polished.In the processing of back, etching is carried out in the whole zone of the outside surface of second wafer 30 by the chemical/physical processing.Therefore, second wafer 30 is divided into and the regional corresponding mirror substrate 3 that will become single deformable mirror 1, and the outside surface of each mirror substrate 3 all is smooth, without any distortion.
Then, shown in Fig. 3 D, apply bending force by for example giving first wafer 20 this moment, and first wafer 20 is cut apart along first groove 21.Therefore, first wafer 20 is divided into and the regional corresponding supporting substrate 2 that will become single deformable mirror 1, so just has been partitioned into single deformable mirror 1.
Then, shown in Fig. 3 E, at the outside surface formation reflectance coating 6 of each mirror substrate 3.Therefore obtain a plurality of deformable mirrors 1 simultaneously.Though in the present embodiment, the formation of the reflectance coating 6 on each mirror substrate 3 is carried out after first wafer 20 is cut apart, and it also can carry out before first wafer 20 is cut apart.
The deformable mirror 1 that as above obtains has the reflectance coating 6 on the outer surface plane that is formed on mirror substrate 3, so the reflecting surface of reflectance coating 6 also is flat.Like this, according to the manufacture method of present embodiment, just can obtain many deformable mirrors 1 simultaneously with good quality.So the manufacture method of present embodiment is enough to be suitable for large-scale production.
The present invention is not limited to the foregoing description, and can in not departing from the scope of the present invention of its spirit various variations be arranged.For example, as long as will be relatively as the zone of single deformable mirror 1, be formed with the surface of first groove 21 of first wafer 20 can the surface outwardly.Like this, Si film portion, Si wiring pattern and thin metal layer be formed on first wafer 20 with the surperficial facing surfaces that forms first groove 21 on.
The present invention is being useful especially aspect the manufacturing deformable mirror.
Claims (5)
1. the manufacture method of a deformable mirror, each deformable mirror comprises:
Supporting substrate;
The mirror substrate, described mirror substrate is relative with supporting substrate and supported by support column, and the surface of described mirror substrate has reflectance coating; And
Piezoelectric element, described piezoelectric element are clipped between described supporting substrate and the described mirror substrate, and when applying electric field, described piezoelectric element expands or shrinks and makes described mirror substrate and the distortion of described reflectance coating; And
Described manufacture method comprises:
The groove of first wafer forms step, forms first groove along the border between the zone that will become deformable mirror on the surface of first wafer, and described first wafer will become described supporting substrate;
The groove of second wafer forms step, forms second groove along the border between the zone that will become deformable mirror on the surface of second wafer, and described second wafer will become described mirror substrate;
Engagement step, described first wafer and described second wafer are configured such that described support column and described piezoelectric element are clipped between the above-mentioned zone of described first wafer and described second wafer, and the surface that forms described second groove inwardly, so that described first wafer of major general and described support column is bonded with each other, described first wafer and described piezoelectric element is bonded with each other and described second wafer and described support column are bonded with each other;
The second wafer segmentation procedure is carried out planarization up to arriving at second groove at least by the outside surface to described second wafer, and described second wafer is divided into the mirror substrate;
The first wafer segmentation procedure by described first wafer that fractures along described first groove, is divided into described supporting substrate with described first wafer; And
Reflectance coating forms step, forms reflectance coating on the outside surface of each the mirror substrate that obtains by described segmentation procedure.
2. the manufacture method of deformable mirror as claimed in claim 1 is characterized in that, described planarization is polishing or etch processes.
3. the manufacture method of deformable mirror as claimed in claim 1 or 2, it is characterized in that, thin metal layer is arranged on office, junction surface between described first wafer and the described support column and the office, junction surface between described first wafer and the described piezoelectric element, described first wafer and described support column and described first wafer and described piezoelectric element mutual extrusion when being heated, thus be bonded with each other.
4. the manufacture method of deformable mirror as claimed in claim 1 or 2, it is characterized in that, thin metal layer is arranged on office, junction surface between described second wafer and the described support column and the office, junction surface between described second wafer and the described piezoelectric element, described second wafer and described support column and described second wafer and described piezoelectric element mutual extrusion when being heated, thus be bonded with each other.
5. the manufacture method of deformable mirror as claimed in claim 1 or 2 is characterized in that, the surface of described first groove of formation that described first wafer is configured such that described first wafer inwardly.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-216660 | 2006-08-09 | ||
| JP2006216660 | 2006-08-09 | ||
| JP2006216660A JP4240087B2 (en) | 2006-08-09 | 2006-08-09 | Method for manufacturing deformable mirror |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101122677A CN101122677A (en) | 2008-02-13 |
| CN101122677B true CN101122677B (en) | 2010-09-29 |
Family
ID=38666942
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101413853A Expired - Fee Related CN101122677B (en) | 2006-08-09 | 2007-08-09 | Manufacturing method for variable shape mirror |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7635191B2 (en) |
| EP (1) | EP1887408B1 (en) |
| JP (1) | JP4240087B2 (en) |
| CN (1) | CN101122677B (en) |
| DE (1) | DE602007011534D1 (en) |
| PL (1) | PL1887408T3 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH699109A1 (en) * | 2008-07-10 | 2010-01-15 | Swatch Group Res & Dev Ltd | Mechanical piece i.e. escape wheel, fabricating method for timepiece, involves depositing coating on exterior surface of mechanical piece for providing high tribological quality of piece, and releasing piece from substrate |
| JP2010167536A (en) * | 2009-01-23 | 2010-08-05 | Seiko Epson Corp | Actuator and actuator connected body |
| JP5740819B2 (en) * | 2010-02-22 | 2015-07-01 | 株式会社ニコン | Spatial light modulator manufacturing method, spatial light modulator, illumination light generator, and exposure apparatus |
| JP6225544B2 (en) * | 2013-07-31 | 2017-11-08 | 株式会社デンソー | Method for manufacturing piezoelectric element |
| CN105116610B (en) * | 2015-09-22 | 2018-10-30 | 深圳市华星光电技术有限公司 | A kind of backlight module |
| DE102016105440A1 (en) * | 2016-03-23 | 2017-09-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for producing optical components using functional elements |
| DE102017220413A1 (en) * | 2017-11-16 | 2019-05-16 | Robert Bosch Gmbh | Micromechanical component and production method for a micromechanical component |
| CN107907905A (en) * | 2017-12-06 | 2018-04-13 | 山东航天电子技术研究所 | A kind of in-orbit smart X-ray optical system |
| JP7014114B2 (en) | 2018-09-25 | 2022-02-01 | オムロン株式会社 | End effector and end effector device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123985A (en) * | 1998-10-28 | 2000-09-26 | Solus Micro Technologies, Inc. | Method of fabricating a membrane-actuated charge controlled mirror (CCM) |
| EP1263059A1 (en) * | 2000-12-22 | 2002-12-04 | Ngk Insulators, Ltd. | Matrix actuator |
| CN1554961A (en) * | 2003-12-25 | 2004-12-15 | ���пƼ���ѧ | Silicon base deformable reflector and its producing method |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993025929A1 (en) * | 1992-06-08 | 1993-12-23 | United Technologies Corporation | Coaxial integrated deformable mirror actuator/retraction arrangement |
| US5696618A (en) * | 1993-09-23 | 1997-12-09 | Daewoo Electronics Co., Ltd. | Electrodisplacive actuated mirror array and method for the manufacture thereof |
| KR970003466B1 (en) * | 1993-09-28 | 1997-03-18 | 대우전자 주식회사 | Manufacturing method of optical path regulating apparatus for projector |
| JPH08190070A (en) | 1995-01-12 | 1996-07-23 | Fuji Xerox Co Ltd | Optical scanner |
| JPH08285708A (en) | 1995-04-12 | 1996-11-01 | Fuji Electric Co Ltd | Pressure sensor |
| US5759753A (en) * | 1995-07-19 | 1998-06-02 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device and method of manufacturing the same |
| JP3618090B2 (en) | 2001-10-23 | 2005-02-09 | 株式会社ニレコ | Collimator and spectrophotometer |
| JP2004109562A (en) | 2002-09-19 | 2004-04-08 | Ricoh Co Ltd | Manufacturing method for wavefront aberration correction mirror, and optical pickup |
| JP2004109769A (en) * | 2002-09-20 | 2004-04-08 | Ricoh Co Ltd | Wave front aberration correction mirror and optical pickup |
| JP2004146487A (en) | 2002-10-23 | 2004-05-20 | Renesas Technology Corp | Method for manufacturing semiconductor device |
| JP4297690B2 (en) | 2003-01-20 | 2009-07-15 | 株式会社リコー | Wavefront aberration correction mirror and optical pickup |
| JP2006171319A (en) | 2004-12-15 | 2006-06-29 | Samsung Yokohama Research Institute Co Ltd | Scanning exposure apparatus |
-
2006
- 2006-08-09 JP JP2006216660A patent/JP4240087B2/en not_active Expired - Fee Related
-
2007
- 2007-08-06 EP EP07015366A patent/EP1887408B1/en not_active Expired - Fee Related
- 2007-08-06 PL PL07015366T patent/PL1887408T3/en unknown
- 2007-08-06 DE DE602007011534T patent/DE602007011534D1/en active Active
- 2007-08-08 US US11/889,025 patent/US7635191B2/en not_active Expired - Fee Related
- 2007-08-09 CN CN2007101413853A patent/CN101122677B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123985A (en) * | 1998-10-28 | 2000-09-26 | Solus Micro Technologies, Inc. | Method of fabricating a membrane-actuated charge controlled mirror (CCM) |
| EP1263059A1 (en) * | 2000-12-22 | 2002-12-04 | Ngk Insulators, Ltd. | Matrix actuator |
| CN1554961A (en) * | 2003-12-25 | 2004-12-15 | ���пƼ���ѧ | Silicon base deformable reflector and its producing method |
Also Published As
| Publication number | Publication date |
|---|---|
| DE602007011534D1 (en) | 2011-02-10 |
| EP1887408A2 (en) | 2008-02-13 |
| JP4240087B2 (en) | 2009-03-18 |
| JP2008040302A (en) | 2008-02-21 |
| PL1887408T3 (en) | 2011-05-31 |
| US20080291519A1 (en) | 2008-11-27 |
| EP1887408B1 (en) | 2010-12-29 |
| CN101122677A (en) | 2008-02-13 |
| EP1887408A3 (en) | 2009-01-21 |
| US7635191B2 (en) | 2009-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101122677B (en) | Manufacturing method for variable shape mirror | |
| US20040233553A1 (en) | Form variable mirror element and method for producing form variable mirror element and form variable mirror unit and optical pick-up | |
| JP4921366B2 (en) | Micromechanical structure system and manufacturing method thereof | |
| CN101122678B (en) | Manufacturing method for variable shape mirror | |
| EP1912214A1 (en) | Variable shape mirror and optical pickup device having the same | |
| US7329015B2 (en) | Variable shape mirror and optical pickup device having the same | |
| EP1757971A1 (en) | Variable-shape mirror, optical pickup therewith, and method for fabricating a variable-shape mirror | |
| US20070091482A1 (en) | Variable-shape mirror and optical pickup apparatus therewith | |
| US20070091481A1 (en) | Variable-shape mirror and optical pickup apparatus therewith | |
| CN212965498U (en) | Adhesive wave plate | |
| EP1887572B1 (en) | Manufacturing method for variable shape mirror | |
| JP2005099086A (en) | Wavefront aberration correction mirror and optical pickup | |
| JP3767836B2 (en) | Deformable mirror and manufacturing method thereof | |
| JP2007149143A (en) | Aberration correction mirror for optical pickup | |
| JP2005043544A (en) | Wave front aberration correction mirror and optical pickup | |
| JP2003157565A (en) | Correction mirror for wave front aberration and optical disk device using the mirror | |
| JP2003084218A (en) | Shape-changeable mirror and optical disk information input/output device | |
| JP2003207729A (en) | Manufacturing method of shape-changeable mirror and optical disk information input/output device | |
| JP2004109277A (en) | Wavefront aberration correction mirror and optical pickup | |
| CN101122680A (en) | Variable shape mirror | |
| JP2008275829A (en) | Deformable mirror, method of manufacturing same, and optical pickup apparatus | |
| JP2002288865A (en) | Optical pickup | |
| WO1999023648A1 (en) | Optical head, optical recorder, microlens and manufacture of microlens | |
| JP2004258374A (en) | Polarizing diffraction element, its manufacturing method, and optical pickup device using this polarizing diffraction element | |
| CN101008705A (en) | Variable-shape mirror and optical pickup apparatus therewith |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100929 Termination date: 20210809 |