CN101047153A - Semiconductor integrated circuit chip and its forming method - Google Patents
Semiconductor integrated circuit chip and its forming method Download PDFInfo
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- CN101047153A CN101047153A CN 200610065974 CN200610065974A CN101047153A CN 101047153 A CN101047153 A CN 101047153A CN 200610065974 CN200610065974 CN 200610065974 CN 200610065974 A CN200610065974 A CN 200610065974A CN 101047153 A CN101047153 A CN 101047153A
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- integrated circuit
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Abstract
The present invention relates to a semiconductor integrated circuit chip. It includes an integrated circuit chip self-body and a nano surface structure resin protection film. Said integrated circuit chip self-body has at least one surface; said nano surface structure resin protection film is formed on said at least one surface; said nano surface structure resin protection film contains several nano particles and a resin material for protecting integrated circuit chip self-body against external interference Besides, said invention also provides a method for forming said semiconductor integrated circuit chip and its concrete operation steps.
Description
Technical field
The present invention is about a kind of semiconductor integrated circuit chip and forming method thereof.The present invention is that continuity is amortized to this case assignee's Chinese invention patent application case numbers 200310115136.9, and the applying date is on November 20th, 2003, and denomination of invention is " surface treatment method of chip device and use the formed chip device of this method ".
Background technology
The present invention is associated with following one of them inventor's following patent: (a). Chinese invention patent application case number 02105960.8, and the applying date is on April 10th, 2002, and denomination of invention is " capacitance type fingerprint reads wafer ", and publication number is 1450489; (b). Chinese invention patent application case number 02123058.7, the applying date is on 06 13rd, 2002, and denomination of invention is " pressure type fingerprint reading chip and a manufacture method thereof ", and publication number is 1464471; (c). Chinese invention patent application case number 02124906.7, the applying date is on 06 25th, 2002, and denomination of invention is " temperature sensor and use the fingerprint identifying chip of this temperature sensor ", and publication number is 1463674; (d). Chinese invention patent application case number 02132054.3, the applying date is on 09 10th, 2002, and denomination of invention is " capacitive pressure little sensing unit and the fingerprint reading chip structure of using thereof ", and publication number is 1482440; (e). Chinese invention patent application case number 03124183.2, the applying date is on May 6th, 2003, denomination of invention is " a kind of capacitance type fingerprint transducer and a manufacture method thereof "; (f). TaiWan, China application for a patent for invention case number 093110603, the applying date is on April 16th, 2004, and denomination of invention is the chip-type transducer of stress rupture and anti-residual dirty interferences " can be antistatic with ", and Certificate Number is for inventing No. 233198; And (g) Chinese invention patent application case numbers 200510085423.9, the applying date is on July 18th, 2005, denomination of invention is " slidingtype image sensing wafer and a processing method thereof with image comparing function ".
In the chip manufacturing mode that field of semiconductor fabrication processes provided, need the consideration electrical characteristics that chip provided usually, and need the program of chip through encapsulation is arranged in the encapsulation matrix, to exempt for example any possible destruction of external force such as pressure and static.
Yet, along with the development in chip application field, new application makes design go up must expose chip surface partly in environment, and for example the fingerprint sensor of chip type just needs to provide a chip surface that contacts with finger, to read the lines of finger, use as identification.
For this reason, the mechanical property of chip surface just must be carried out consideration with provide one wear-resisting, withstand voltage and can have scold water, scold oil and antifouling surface characteristic.
On the prior art; the foundation structure of capacitance type fingerprint sensor chip is to make associated sensed and control processing circuit in a silicon substrate; at a plurality of metallic plates of the surface arrangement array type of chip as sensing electrode (from then on comprise sensing and control processing circuit and silicon substrate below the sensing electrode and will be referred to as board structure); and form the outmost surface of a dielectric materials layer in chip, double sense capacitance dielectric medium and the chip done is exposed to outer protective layer.For reaching said chip surface withstand voltage and wear-resisting characteristic; prior art all is to utilize the protective layer of a hard dielectric material as the outermost top layer; for example world patent WO 01/06448A1, WO 03/098541A1, United States Patent (USP) the 6th; 091,082, European patent EP 1256899, United States Patent (USP) the 6th, 114; No. 862 and United States Patent (USP) the 6th; 515, No. 488, all disclosed this framework.In brief, the invention of prior art is formed at the board structure top nothing more than the stiff materials layer in for example silica, silicon nitride, the carborundum.
Wherein silica and silicon nitride cause finger greasy dirt or finger sweat residual for forming the hydrophilic material of hydrophilic surface easily.Though and carbofrax material has repellency characteristic preferably, yet there is not the good oily characteristic of scolding, still easy residual grease, the permanent use down causes image rotten.Moreover when above-mentioned material deposited, surface roughness was difficult for keyholed back plate, needed sometimes to reach the surface of good evenness and be difficult for the surface characteristic of residual greasy dirt by cmp (CMP), increased the complexity of making also.Thomas is at United States Patent (USP) the 6th, 515, in No. 488 bulletins, disclosed deposition by silica and follow-up CMP technology and silica is filled up a plurality of small holes reaches smooth outer surface.Yet this measure makes the manufacture process too complex again, and is not suitable for the fabrication schedule of general commercial chip foundries.
In the US6762470 patent, people such as Siegel have disclosed and have made the Teflon material in the design of chip surface, and some is to scold water in order solving, to scold oil and antifouling surface characteristic problem for its purpose.Yet the higher material of surface energies such as the fluorine carbon condensate of Teflon (Teflon is the trade mark of du pont company) and the silica of semiconductor chip surface, silicon nitride is bond effectively.So, utilize the made fingerprint sensor of this type of material just can come off easily merely through the test of fingerprint repeatedly friction.
For solving this problem, the same inventor of this case has disclosed in No. 200310115136.9, Chinese invention patent and has utilized that to connect silylation at the polymeric other end of fluorine carbon be that the material an of the best is selected, and this is because the Si-O-CH in the silylation
3Or Si-O-C
2H
5Be easy to be hydrolyzed into Si-O-or Si-OH base, this base just can with the covalent bond or the hydrogen bond of formation-Si-O-Si-such as the silica of semiconductor chip surface, silicon nitride or the contour bond intensity of Si-O-H.
For the ease of making and producing, said method is that high polymer monomer is prepared into the solution pattern, its processing method is for soaking this soln using, revolve mode for cloth (spin coating) or spray pattern (spray coating) as photoresist, coat the semiconductor chip surface, provide high temperature (＞60 ℃) and high humidity (90%) environment subsequently, in order to solidifying polymerization.
Yet, making that a major defect of this kind method is exactly a high polymer monomer and solidification process only can form the thickness of molecular layer at chip surface, that is to say the only tens of approximately nanometers of its maximum ga(u)ge, struck off when being easy to, reduced antifouling effect because of the improper use of chip.
Moreover, because the manufacture process of chip will produce uneven phenomenon on the surface originally, utilize the method for No. 200310115136.9 patents of invention of China also can't form a flat surfaces.Similarly, tire easily the contamination dirt in the slit of chip surface.
The most important thing is that in order to meet following environmental requirement, the electronic products that contains halogen compounds uses that will be under an embargo above-mentionedly for this reason utilizes fluoride to solve chip list to reprove water, scold the method for oily and antifouling surface characteristic that very big environmental issue will be arranged.
The spirit of No. 200310115136.9 patents of invention of continuity China, antifouling to solve chip surface, also overcome the problem that it faced simultaneously, the present invention will provide another solution.
Summary of the invention
An object of the present invention is to provide a kind of surface treatment method of semiconductor integrated circuit chip and use the formed semiconductor integrated circuit chip of this method, to prevent that for example the external factor of dirt, water and grease is disturbed for example running of this semiconductor integrated circuit chip of capacitance type fingerprint transducer.
For reaching above-mentioned purpose, the invention provides a kind of semiconductor integrated circuit chip, it comprises: an integrated circuit (IC) chip body has at least one surface; And a Nanosurface structure resin diaphragm, it is formed on this at least one surface, and this Nanosurface structure resin diaphragm contains a plurality of nano particles and a resin material, avoids in external disturbance in order to protect this integrated circuit (IC) chip body.
In addition, the present invention also provides a kind of formation method of aforesaid semiconductor integrated circuit (IC) chip, comprises following steps: an integrated circuit (IC) chip body is provided, and this integrated circuit (IC) chip body has at least one surface of exposing; Coating contains a synthetic resin of a plurality of nano particles and a resin material on this at least one surface of this integrated circuit (IC) chip body; And under suitable environment set, toast this synthetic resin so that its curing is used for protecting this integrated circuit (IC) chip body to avoid in external disturbance and form the Nanosurface structure resin diaphragm with lotus-effect (lotus effect).
Effect of the present invention is significant: main application target of the present invention is to form a Nanosurface structure resin diaphragm in a kind of semiconductor integrated circuit chip surface; make this semiconductor integrated circuit chip surface have antifouling, hydrophobic and fuel shedding quality; be specially adapted to the semiconductor fingerprint sensor chip; the fingerprint sensing chip of condenser type, Electric field, thermal-induction type or other possible sensing mode for example is to prevent that the user from referring to dirt and fingerprint residues, the raising fingerprint reads and the quality of identification.Material used in the present invention is the synthetic resin of Nanosurface structure, and its advantage is that the Nanosurface structure has (lotus effect) lotus-effect, can oil and water repellent and antifouling.And the hardness of synthetic resin and resistance to wear are all very good, and chip surface is difficult for scratch.And because do not use halogen compounds, so the present invention also meets current environmental requirement.
Description of drawings
Fig. 1 shows the schematic diagram according to the surface treatment method of the semiconductor integrated circuit chip of preferred embodiment of the present invention.
One Application Example of the semiconductor integrated circuit chip of Fig. 2 displayed map 1.
Fig. 3 shows the schematic diagram of the fingerprint image that semiconductor integrated circuit chip obtained that utilizes Fig. 2.
The Another Application embodiment of the semiconductor integrated circuit chip of Fig. 4 displayed map 1.
Fig. 5 shows that a plurality of fragment fingerprint images that semiconductor integrated circuit chip obtained that utilize Fig. 4 are combined into the schematic diagram of a fingerprint image.
The main element symbol description
10 ... the integrated circuit (IC) chip body
11 ... the surface
12 ... chip type fingerprint sensing unit
13 ... the static discharge metal mesh structure
20 ... Nanosurface structure resin diaphragm
Embodiment
The present invention is about a kind of semiconductor integrated circuit chip with Nanosurface structure resin diaphragm and forming method thereof, especially can avoid the formation method of the Nanosurface structure resin diaphragm that semiconductor integrated circuit chip is subjected to external disturbance and use the formed semiconductor integrated circuit chip of this method about a kind of.
Traditional resin does not have hydrophobic and fuel shedding quality, and main cause is essentially hydrocarbon structure for its molecular structure.In order to solve this problem; the practice that the present invention takes is to mix metal nanoparticle, ceramic nano particle or high molecular nanometer particle in the resin material; make synthetic resin material form the nanometer matsurface later on through high temperature (for example 150 ℃) baking-curing; perhaps utilize the principle of hot setting phase change also can form identical matsurface; has the characteristic that is equal to as lotus flower or the lotus flower leaf surface; this specific character can be commonly referred to as lotus-effect (lotus effect); such effect has reduced surface energy, has also therefore improved the characteristic of hydrophobic and oleophobic.Characteristic in conjunction with resin material and surface nano-structure can be referred to as the nanometer resin; the main cause of selecting resin for use is exactly the characteristic [compared to other as Polyimide (polyimide) macromolecular material] of its wear-resisting and high rigidity; quite be fit to be applied to the body surface that needs are rubbed, for example the present invention's slide fingerprint sensing chip surface protection of mainly using.
A kind of formation method with semiconductor integrated circuit chip of Nanosurface structure resin diaphragm of the present invention below will be described.See also Fig. 1,2, the formation method of the diaphragm of this semiconductor integrated circuit chip comprises following steps.
At first, provide an integrated circuit (IC) chip body 10, respectively this integrated circuit (IC) chip body 10 have expose at least one surperficial 11.When applying the present invention to a kind of chip type fingerprint sensor, as shown in Figure 1, its integrated circuit (IC) chip body 10 has more a plurality of fingerprint sensing unit 12, and in order to an all or part of fingerprint of sensing one finger, and the surface of exposing 11 numbers of this integrated circuit (IC) chip body 10 only have one.The surface 11 of this integrated circuit (IC) chip body 10 is by dielectric material for example silica or silicon nitride; for example aluminium, gold etc. are formed for perhaps partly exposed dielectric material and part bare metal material; in present embodiment; this bare metal material is a static discharge metal mesh structure 13; with discharge near in the electrostatic charge of finger; and static discharge metal mesh structure 13 is covered by this Nanosurface structure resin diaphragm 20, perhaps exposes from this Nanosurface structure resin diaphragm 20.
Then, by for example soak, rotary coating (spin coating) or spray coating (spray coating) mode apply the synthetic resin that contains a plurality of nano particles and a resin material in this of this integrated circuit (IC) chip body 10 at least one surperficial 11.
Then, under suitable environment set, toast this synthetic resin so that its curing is used for protecting this integrated circuit (IC) chip body to avoid in external disturbance and form the Nanosurface structure resin diaphragm with lotus-effect (lotus effect).Can determine by Fabrication parameter owing to make thickness, the speed setting of rotary coating for example, optimum thickness is between 0.3 to 10 micron.
Therefore, comprise an integrated circuit (IC) chip body 10 and a Nanosurface structure resin diaphragm 20 according to the formed semiconductor integrated circuit chip of said method.This integrated circuit (IC) chip body 10 has at least one surperficial 11.Respectively this Nanosurface structure resin diaphragm 20 forms this Nanosurface structure resin diaphragm of solidifying at this at least one surperficial 11 by a synthetic resin that uses a plurality of nano particles and a resin material.
Because the thickness of Nanosurface structure resin diaphragm can be controlled,, improve the above-mentioned shortcoming of prior art so also can do the planarization action by this uneven surface to original chip.
One application examples of the semiconductor integrated circuit chip of Fig. 2 displayed map 1.As shown in Figure 2, this integrated circuit (IC) chip body 10 leaves standstill a fingerprint image of finger 50 thereon in order to sensing, as shown in Figure 3.
The Another Application example of the semiconductor integrated circuit chip of Fig. 4 displayed map 1.As shown in Figure 4, this integrated circuit (IC) chip body 10 slides through a plurality of fragment fingerprint images of finger 50 wherein in order to sensing, is processed into a fingerprint image for follow-up map interlinking, as shown in Figure 5.
The specific embodiment that is proposed in the detailed description of preferred embodiment is only in order to convenient explanation technology contents of the present invention, but not with narrow sense of the present invention be limited to the foregoing description, in the situation that does not exceed spirit of the present invention and interest field, the many variations of being done is implemented, and all belongs to scope of the present invention.
Claims (15)
1. a semiconductor integrated circuit chip is characterized in that, comprises:
One integrated circuit (IC) chip body has at least one surface; And
One Nanosurface structure resin diaphragm, it is formed on this at least one surface, and this Nanosurface structure resin diaphragm contains a plurality of nano particles and a resin material, avoids in external disturbance in order to protect this integrated circuit (IC) chip body.
2. semiconductor integrated circuit chip as claimed in claim 1 is characterized in that, the thickness of this Nanosurface structure resin diaphragm is between 0.3 to 10 micron.
3. semiconductor integrated circuit chip as claimed in claim 1 is characterized in that, this integrated circuit (IC) chip body has more a plurality of fingerprint sensing unit, in order to an all or part of fingerprint of sensing one finger.
4. semiconductor integrated circuit chip as claimed in claim 1 is characterized in that, this integrated circuit (IC) chip body slides through a plurality of fragment fingerprint images of a finger wherein in order to sensing.
5. semiconductor integrated circuit chip as claimed in claim 1 is characterized in that, this integrated circuit (IC) chip body leaves standstill a fingerprint image of a finger thereon in order to sensing.
6. semiconductor integrated circuit chip as claimed in claim 1 is characterized in that, this at least one surface is made up of silica or silicon nitride.
7. semiconductor integrated circuit chip as claimed in claim 1 is characterized in that, this integrated circuit (IC) chip body has more a static discharge metal mesh structure, with discharge electrostatic charges.
8. semiconductor integrated circuit chip as claimed in claim 7 is characterized in that, this static discharge metal mesh structure exposes from this Nanosurface structure resin diaphragm.
9. the formation method of a semiconductor integrated circuit chip as claimed in claim 1 is characterized in that, comprises following steps:
One integrated circuit (IC) chip body is provided, and this integrated circuit (IC) chip body has at least one surface of exposing;
Coating contains a synthetic resin of a plurality of nano particles and a resin material on this at least one surface of this integrated circuit (IC) chip body; And
Under suitable environment set, toast this synthetic resin so that it solidifies, be used for protecting this integrated circuit (IC) chip body to avoid and form a Nanosurface structure resin diaphragm in external disturbance with lotus-effect.
10. the formation method of semiconductor integrated circuit chip as claimed in claim 9 is characterized in that, the thickness of this Nanosurface structure resin diaphragm is between 0.3 to 10 micron.
11. the formation method of semiconductor integrated circuit chip as claimed in claim 9 is characterized in that, this step that applies this synthetic resin is to reach by immersion, rotary coating or spray coating mode.
12. the formation method of semiconductor integrated circuit chip as claimed in claim 9 is characterized in that, this integrated circuit (IC) chip body has more a plurality of fingerprint sensing unit, in order to a fingerprint of sensing one finger.
13. the formation method of semiconductor integrated circuit chip as claimed in claim 9 is characterized in that, this integrated circuit (IC) chip body slides through a plurality of fragment fingerprint images of a finger wherein in order to sensing.
14. the formation method of semiconductor integrated circuit chip as claimed in claim 9 is characterized in that, this integrated circuit (IC) chip body leaves standstill a fingerprint image of a finger thereon in order to sensing.
15. the formation method of semiconductor integrated circuit chip as claimed in claim 9 is characterized in that, more comprises following steps: this Nanosurface structure resin diaphragm is given planarization.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610065974 CN101047153A (en) | 2006-03-29 | 2006-03-29 | Semiconductor integrated circuit chip and its forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610065974 CN101047153A (en) | 2006-03-29 | 2006-03-29 | Semiconductor integrated circuit chip and its forming method |
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| CN101047153A true CN101047153A (en) | 2007-10-03 |
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| CN 200610065974 Pending CN101047153A (en) | 2006-03-29 | 2006-03-29 | Semiconductor integrated circuit chip and its forming method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103793688A (en) * | 2014-01-23 | 2014-05-14 | 深圳市汇顶科技股份有限公司 | Biometric feature recognition device and electronic equipment |
| CN105359164A (en) * | 2013-07-11 | 2016-02-24 | 指纹卡有限公司 | Fingerprint sensing device with protective coating |
| WO2016037574A1 (en) * | 2014-09-12 | 2016-03-17 | 苏州晶方半导体科技股份有限公司 | Chip packaging method and package structure |
| CN105940413A (en) * | 2013-08-08 | 2016-09-14 | 三星电子株式会社 | Fingerprint recognition device, manufacturing method therefor and electronic device |
-
2006
- 2006-03-29 CN CN 200610065974 patent/CN101047153A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105359164A (en) * | 2013-07-11 | 2016-02-24 | 指纹卡有限公司 | Fingerprint sensing device with protective coating |
| CN105359164B (en) * | 2013-07-11 | 2017-04-05 | 指纹卡有限公司 | Finger sensor apparatus with protective coating |
| CN105940413A (en) * | 2013-08-08 | 2016-09-14 | 三星电子株式会社 | Fingerprint recognition device, manufacturing method therefor and electronic device |
| US10229306B2 (en) | 2013-08-08 | 2019-03-12 | Samsung Electronics Co., Ltd. | Fingerprint recognition device, method of manufacturing the same, and electronic device thereof |
| CN105940413B (en) * | 2013-08-08 | 2019-11-01 | 三星电子株式会社 | Fingerprint identification device, its manufacturing method and electronic equipment |
| CN103793688A (en) * | 2014-01-23 | 2014-05-14 | 深圳市汇顶科技股份有限公司 | Biometric feature recognition device and electronic equipment |
| WO2015109828A1 (en) * | 2014-01-23 | 2015-07-30 | 深圳市汇顶科技股份有限公司 | Biometric feature recognition device and electronic equipment |
| WO2016037574A1 (en) * | 2014-09-12 | 2016-03-17 | 苏州晶方半导体科技股份有限公司 | Chip packaging method and package structure |
| US10090217B2 (en) | 2014-09-12 | 2018-10-02 | China Wafer Level Csp Co., Ltd. | Chip packaging method and package structure |
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