CN101026335B - Control circuit for power supply device, power supply device, and control method thereof - Google Patents

Control circuit for power supply device, power supply device, and control method thereof Download PDF

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Publication number
CN101026335B
CN101026335B CN2006100875032A CN200610087503A CN101026335B CN 101026335 B CN101026335 B CN 101026335B CN 2006100875032 A CN2006100875032 A CN 2006100875032A CN 200610087503 A CN200610087503 A CN 200610087503A CN 101026335 B CN101026335 B CN 101026335B
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China
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level
voltage
supply unit
requires
initial setting
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CN101026335A (en
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小泽秀清
中村享
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Socionext Inc
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Fujitsu Semiconductor Ltd
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/34Parallel operation in networks using both storage and other dc sources, e.g. providing buffering

Abstract

A control circuit for a power supply device, a power supply device, and a control method thereof are provided where the output voltages to be supplied to various devices are determined and set up to optimum levels rapidly and efficiently. A control circuit 10 A in a power supply device supplies a device 60, which supplies an initial voltage and then demands to receive a required level of voltage which is different from an initial voltage supplied beforehand, with the required level of voltage ranging from V 1 to V 3. The control circuit 10 A comprises a communication unit 21 for receiving a demand level such as V 1 and a storage unit 22, including REG 1 to REG 3, for storing an initial setting level beforehand for determining the initial voltage and the demand level received by the communication unit 21. The initial voltage or the required voltage ranging from V 1 to V 3 can controlled in response to the initial setting level or the demand level.

Description

Supply unit control circuit, supply unit and control method thereof
Technical field
The present invention relates to be used for control circuit, the power supply of supply unit, and the method that is used to control power supply.
Background technology
Because integrated circuit (for example LSI or IC) is different on manufacturing process usually, so its transistorized threshold voltage levels or resistance level may be inconsistent.And, depending on service condition (comprising environment temperature), the transistorized threshold voltage levels of this integrated circuit or resistance level may be different.Under transistorized threshold voltage levels or the inconsistent situation of resistance level, the time of delay of integrated circuit will be therefore different, thereby service speed is also different.In order to eliminate any marked change on the service speed, be provided with supply unit, be used for applying the optimal voltage relevant with threshold voltage levels or resistance level to integrated circuit.
The electronic equipment and the integrated circuit of supply unit control are disclosed respectively in not substantive examination patent disclosure of Japan 2000-228833 and 2001-332695 number.2000-228833 number disclosed electronic equipment is set to by external power source the battery that it is associated be charged, and discharges for the operating system assembly.Particularly, the output of its supply unit (power supply) is controlled, so that the operand power of system component keeps certain substantially with summation to the charging of battery.This electronic equipment makes the output (electric current) that the controller of supply unit can the monitoring power supply device, and control is fed to the power of system component and to the charging of the battery that is associated, thereby makes minimise power consumption.
2001-332695 number disclosed integrated circuit comprises first gate and second gate, described first gate is by first group of less power supply electric potential of potential difference, described second gate is by second group of bigger power supply electric potential of potential difference, and the reference potential at MIS transistor place is shared by first gate and second gate.This integrated circuit makes the transistorized voltage output amplitude of MIS in second gate become greater than the transistorized voltage output amplitude of the MIS in first gate, thereby operates second gate with the speed that is higher than first gate.And, because the power consumption of each gate and the transistorized voltage output amplitude of MIS is square proportional in the integrated circuit, therefore the transistorized voltage output amplitude of MIS in first gate is set to the transistorized voltage output amplitude less than the MIS in second gate, thereby can utilize the power consumption lower than second gate to operate first gate.
Summary of the invention
Supply unit is connected with the various device that comprises said integrated circuit.Therefore, be necessary the output voltage of supply unit is modified to its optimal level to be matched with the equipment of connection, the service speed that prevents integrated circuit simultaneously is owing to significant difference appears in any difference of transistor threshold voltage level or resistance level.
Yet the voltage output of supply unit has to be adjusted to optimal level at every turn when starting supply unit.The different optimal level because voltage output is revised as from its fixing initial set value along with each equipment, so it is revised required time and will be significantly longer.In other words, be difficult at high speed the voltage output modifications be arrived its optimal level.
And supply unit allows the output of its voltage to be modified to optimal level according to each type of institute's connection device from fixing initial set value, thus its to set action will be that efficient is low-down.
The present invention considers above shortcoming and designs, its purpose is to provide a kind of control circuit of supply unit, a kind of supply unit and control method thereof of being used for, and the voltage output that wherein can will be fed to plurality of devices at a high speed efficiently is set at optimal level.
The control circuit that is used for supply unit of the present invention's first technical scheme, and the present invention's second technical scheme be used for comprise to the supply unit that provides initial voltage to require then to receive the supply of equipment required voltage of the required voltage that is different from initial voltage: the communication unit that requires level that is used to receive required voltage; And be used for storing in advance the received memory cell that requires level of initial setting level and storing communication unit that is used for determining initial voltage, wherein in response to the initial setting level or require level to control initial voltage or required voltage.
The control circuit that is used for supply unit of the present invention's first technical scheme, and the supply unit of the present invention's second technical scheme comprises the communication unit that requires level that is used to receive required voltage, and be used for storing in advance the received memory cell that requires level of initial setting level and storing communication unit that is used for determining initial voltage, wherein in response to the initial setting level or require level to control initial voltage or required voltage.The result, the situation that all voltage is adjusted to the optimal level of equipment when starting with each supply unit is compared, in response to being stored in requiring level and directly voltage is set to the required required time of optimal level of equipment that is connected and can becomes shorter in the memory cell.In other words, can be set to optimal level by the voltage that will be fed to equipment efficiently and at a high speed.
The supply unit control method of the present invention's the 3rd technical scheme is used for to the supply of equipment required voltage that provides initial voltage to require then to receive the required voltage that is different from initial voltage, and this method may further comprise the steps: the level that requires that receives required voltage; Storage in advance is used for determining the initial setting level of initial voltage, and stores the received level that requires; And in response to the initial setting level or require level to control initial voltage or required voltage.
The supply unit control method of the present invention's the 3rd technical scheme may further comprise the steps: the level that requires that receives required voltage; Storage in advance is used for determining the initial setting level of initial voltage, and stores the received level that requires; And in response to the initial setting level or require level to control initial voltage or required voltage.As a result, the situation that all voltage is adjusted to the optimal level of equipment when starting with each supply unit is compared, and is required level and directly voltage is set to the required required time of optimal level of equipment that is connected and can becomes shorter in response to what store.In other words, can be set to optimal level by the voltage that will be fed to equipment efficiently and at a high speed.
Description of drawings
When reading in conjunction with the accompanying drawings, from the following detailed description, above-mentioned and other purpose of the present invention and new feature will present more fully.But should be understood that clearly that accompanying drawing only is used for the illustrative purpose, but not be intended to define limitation of the invention.
Fig. 1 illustrates the supply unit of first embodiment of the invention and the block diagram of the connection between the electronic equipment;
Fig. 2 is the circuit diagram that is connected to the supply unit of electronic equipment;
Fig. 3 is the schematic diagram of the electronic equipment that links to each other with supply unit.
Embodiment
(embodiment)
Below with reference to Fig. 1 to 3 one embodiment of the present of invention are described.As shown in Figure 1, the supply unit 10 of this embodiment is connected to electronic equipment 60 (external equipment) by iic bus IIC (communicator).Iic bus IIC is used for exchanging several data between supply unit 10 and electronic equipment 60.As shown in the figure, supply unit 10 has three (CH-1 to CH-3) passage outputs.Electronic equipment 60 comprises one or more integrated circuits.
As shown in Figure 2, supply unit 10 comprises communication controler 20, and first to the 3rd DC-DC converter 30 to 50.Communication controler 20 comprises interface controller 21, flash memory 22, data processor 23 (for example MPU), and three register REG1 to REG3.What 10A represented among the figure is the control circuit of supply unit 10.
Interface controller 21 links to each other with iic bus IIC.As can be seen, iic bus IIC is connected to the interface controller 61 of electronic equipment 60 from Fig. 2 and 3.As shown in Figure 3, electronic equipment 60 comprises ring oscillator RINGOSC and oscillator OSC4.Ring oscillator RINGOSC and oscillator OSC4 are connected to phase-locked loop circuit PLL.Phase-locked loop circuit PLL is connected to frequency 63.Frequency 63 then links to each other with interface controller 61.
As shown in Figure 2, register REG1, REG2 and REG3 and data processor 23 are connected in parallel with interface controller 21.Flash memory 22 is connected to data processor 23, and data processor 23 is parallel-connected to register REG1, REG2 and REG3 again.
As shown in the figure, register REG1 is connected to the D/A converter DAC1 of a DC-DC converter 30.Register REG2 is connected to the D/A converter DAC2 of the 2nd DC-DC converter 40.Register REG3 is connected to the D/A converter DAC3 of the 3rd DC-DC converter 50.
As shown in the figure, a DC-DC converter 30 comprises main switching transistor FET1, synchronous side switching transistor FET2, choke L1 and capacitor C1.The drain electrode of main switching transistor FET1 is connected to input (IN1), is used to receive DC input voitage VIN.As shown in Figure 3, DC input voitage VIN both had been applied to main switching transistor FET1, was applied to communication controler 20 via input (IN4) again.The source electrode of main switching transistor FET1 is connected to the drain electrode of synchronous side switching transistor FET2.The source electrode of synchronous side switching transistor FET2 is connected to ground.And the drain electrode of the source electrode of main switching transistor FET1 and synchronous side switching transistor FET2 is connected to choke L1.Choke L1 is connected to output (OUT1).Capacitor C1 is connected between output (OUT1) and the ground.Output (OUT1) is connected to electronic equipment 60.
The one DC-DC converter 30 also comprises error amplifier ERA1, D/A converter DAC1, triangular wave oscillator OSC1 and PWM comparator PWM1.The inverting input of error amplifier ERA1 is connected to output (OUT1).The in-phase input end of error amplifier ERA1 is connected to D/A converter DAC1.
Triangular wave oscillator OSC1 exports triangular signal.This triangular signal is (for example at 1.0V between the 2.0V) vibration in a voltage magnitude scope.Triangular wave oscillator OSC1 can comprise OP amplifier, resistor, capacitor or the like.
PWM comparator PWM1 has positive input terminal (+) and negative input end (-).Positive input terminal (+) is connected to the output (N1) of error amplifier ERA1, and negative input end (-) is connected to triangular wave oscillator OSC1.The output (Q1) of PWM comparator PWM1 is connected to the grid of main switching transistor FET1, and the reversed-phase output of PWM comparator PWM1 (* Q1) is connected to the grid of synchronous side switching transistor FET2.
The 2nd DC-DC converter 40 is structurally basic identical with a DC-DC converter 30.More specifically, can replace error amplifier ERA1, D/A converter DAC1, triangular wave oscillator OSC1, PWM comparator PWM1, main switching transistor FET1, synchronous side switching transistor FET2, choke L1 and capacitor C1 with error amplifier ERA2, D/A converter DAC2, triangular wave oscillator OSC2, PWM comparator PWM2, main switching transistor FET3, synchronous side switching transistor FET4, choke L2 and capacitor C2 respectively, thereby construct the 2nd DC-DC converter 40 of present embodiment.Triangular wave oscillator OSC2 and triangular wave oscillator OSC1 export in a voltage magnitude scope triangular signal of (for example at 1.0V between the 2.0V) vibration the samely.
What N2, IN2 and OUT2 represented respectively is the output of error amplifier ERA2, the input of the 2nd DC-DC converter 40 and the output of the 2nd DC-DC converter 40.The output of PWM comparator PWM2 and reversed-phase output are represented with Q2 and * Q2 respectively.Output OUT2 is connected to electronic equipment 60.
The 3rd DC-DC converter 50 comprises nmos pass transistor FET5, nmos pass transistor FET6, choke L3 and capacitor C3.As shown in the figure, the drain electrode of nmos pass transistor FET5 is connected to input IN3, is used to receive DC input voitage VIN.The source electrode of nmos pass transistor FET5 is connected to choke L3, and this choke L3 is connected to ground again.
The source electrode of nmos pass transistor FET5 is connected to the drain electrode of nmos pass transistor FET6.And the source electrode of nmos pass transistor FET6 is connected to output OUT3.Capacitor C3 is connected between output OUT3 and the ground.Output OUT3 is connected to electronic equipment 60.
The 3rd DC-DC converter 50 comprises error amplifier ERA3, D/A converter DAC3, triangular wave oscillator OSC3 and PWM comparator PWM3.The inverting input of error amplifier ERA3 is connected to output OUT3.The in-phase input end of error amplifier ERA3 is connected to D/A converter DAC3.Triangular wave oscillator OSC3 exports triangular signal with triangular wave oscillator OSC1 and OSC2 the samely.
The positive input terminal (+) of PWM comparator PWM3 is connected to the output N3 of error amplifier ERA3, and its negative input end (-) is connected to triangular wave oscillator OSC3.The output Q3 of PWM comparator PWM3 is connected to the grid of nmos pass transistor FET5.The reversed-phase output * Q3 of PWM comparator PWM3 is connected to the grid of nmos pass transistor FET6.
The control method of supply unit 10 is described now.When supply unit shown in Figure 2 10 energisings, its interface controller 21 outputs to data processor 23 with reset signal S1.When receiving reset signal S1, data processor 23 visit flash memories 22 are to read primary data.This primary data is used for voltage V1 is made as the original levels that is stored in nonvolatile mode at flash memory 22 in advance, and described voltage V1 will be supplied to the electronic equipment 60 that links to each other with the output OUT1 of a DC-DC converter 30.More specifically, initial voltage is set as the nominal level (for example 5V) with the corresponding electronic equipment 60 of initial setting level of the present invention.Data processor 23 will output to register REG1 with the corresponding voltage command signal S2 of primary data.Because flash memory 22 is with nonvolatile mode storing initial data (initial setting level), it is corresponding to Nonvolatile memory devices of the present invention (memory).The initial setting level is not limited to the nominal level (5V) of electronic equipment 60, but can select from the allowed band (for example from 4.5V to 5.5V) of rated voltage.
Register REG1 storage voltage command signal S2 outputs to signal S2 the D/A converter DAC1 of the one DC-DC converter 30 then.When supply unit 10 energising, register REG1 is with the voltage command signal S2 of easy disabling mode storing initial data (initial setting level), and corresponding to register cell of the present invention (volatile memory cell).
D/A converter DAC1 produces analog voltage signal (reference voltage) from voltage command signal S2, and this analog voltage signal is received by the in-phase input end of error amplifier ERA1 then.As shown in the figure, voltage V1 is fed back to the inverting input of error amplifier ERA1.Error amplifier ERA1 compares feedback voltage V 1 and reference voltage, the error output voltage is outputed to the positive input terminal (+) of PWM comparator PWM1.
The negative input end (-) of PWM comparator PWM1 receives the triangular signal from triangular wave oscillator OSC1.PWM comparator PWM1 with the voltage of triangular signal with from the error output voltage of error amplifier ERA1 relatively.
When error output voltage during greater than the voltage of triangular signal, PWM comparator PWM1 is from the pwm signal of output Q1 output high level.Simultaneously, PWM comparator PWM1 is from the pwm signal of output * Q1 output low level.When error output voltage during less than the voltage of triangular signal, PWM comparator PWM1 is from the pwm signal of output Q1 output low level.Simultaneously, PWM comparator PWM1 is from the pwm signal of output * Q1 output high level.
Pwm signal is input to the grid of main switching transistor FET1.Main switching transistor FET1 conducting when pwm signal is in high level ends during low level.Anti-phase pwm signal is input to the grid of synchronous side switching transistor FET2.Synchronous side switching transistor FET2 ends when anti-phase pwm signal is in low level, conducting during high level.By repeating pwm signal variation between low level and high level in variation between high level and the low level and anti-phase pwm signal, voltage V1 is adjusted to original levels (being 5V in the present embodiment), then it is fed to electronic equipment 60 via output OUT1.Because a DC-DC converter 30 relatively and by conducting with by two switching transistor FET1 and FET2 is adjusted to initial set value with voltage V1 with feedback voltage V 1 and the analog signal (reference voltage) of coming from voltage command signal S2 conversion, so it is corresponding to voltage controller of the present invention.
Integrated circuit in the electronic equipment 60 may be different on transistorized threshold voltage or resistance level.Therefore, the optimal level of integrated circuit voltage may depend on threshold voltage or resistance level etc. and be inconsistent.For the optimal level that obtains voltage V1 (for example, corresponding to the 4.8V of the required level of voltage required for the present invention), electronic equipment 60 outputs to interface controller 21 with regulated voltage signal S14 (see figure 3), and this will be described below.
As shown in Figure 3, phase-locked loop circuit PLL receives from the frequency signal S11 of ring oscillator RINGOSC with from the reference frequency signal S12 of oscillator OSC4.For example, ring oscillator RINGOSC comprises loop, one group of inverter can be linked to be odd level in this loop.The cycle of frequency signal S11 is to be determined by the long-pending of the time of delay of the odd number sum of series inverter of inverter.This time of delay is according to threshold voltage or resistance level etc. and different.Therefore, the cycle of frequency signal S11 is according to threshold voltage or resistance level etc. and different.Phase-locked loop circuit PLL compares frequency signal S11 and reference frequency signal S12 with output signal output S13.Output signal S13 represents poor between frequency signal S11 and reference frequency signal S12.Then output signal S13 is input to frequency 63.The regulated voltage signal S14 that frequency 63 outputs come from output signal S13 conversion.If necessary, then regulated voltage signal S14 is sent to interface controller 21 supply unit 10 from interface controller 61 via iic bus IIC.Regulated voltage signal S14 regulation voltage V1 is to eliminate poor between frequency signal S11 and reference frequency signal S12.This makes the DC-DC converter 30 of winning can be to the optimal level (4.8V) of electronic equipment 60 supply voltage V1.Because interface controller 21 receives the regulated voltage signal S14 that is used for voltage V1 is adjusted to optimal level, so it is corresponding to communication unit of the present invention.
As shown in Figure 2, interface controller 21 outputs to register REG1 and data processor 23 with regulated voltage signal S14.Register REG1 replaces voltage command signal S2 with regulated voltage signal S14 and stores, and then regulated voltage signal S14 is outputed to the transducer DAC1 of a DC-DC converter 30.Since register REG1 voltage V1 by when supply unit 10 is fed to electronic equipment 60 with the received regulated voltage signal S14 of easy disabling mode memory interface controller 21, so it is corresponding to register cell of the present invention.Data processor 23 is write the voltage-regulation data (voltage level that receives) corresponding to regulated voltage signal S14 in flash memory 22, it has replaced primary data (initial setting level).Because flash memory 22 has been stored the voltage-regulation data (voltage level that receives) of the regulated voltage signal S14 that receives at interface controller 21 places and write by data processor 23, so it is corresponding to memory cell of the present invention.
D/A converter DAC1 will output to the in-phase input end of error amplifier ERA1 corresponding to the analog voltage signal (reference voltage) of regulated voltage signal S14.Can see that from Fig. 2 error amplifier ERA1 compares feedback voltage V 1 and reference voltage, the error output voltage is outputed to the positive input terminal (+) of PWM comparator PWM1.
Similar with above-mentioned control method, PWM comparator PWM1 outputs to the grid of main switching transistor FET1 and the grid of synchronous side switching transistor FET2 respectively with pwm signal and anti-phase pwm signal.Similar with above-mentioned control method, pwm signal repeats to change between high level and low level, anti-phase pwm signal repeats to change between low level and high level simultaneously, thereby the voltage V1 that is fed to electronic equipment 60 via output OUT1 can be controlled at optimal level (4.8V).Because a DC-DC converter 30 is feedback voltage V 1 and corresponding to the analog signal (reference voltage) of regulated voltage signal S14 relatively, and by conducting with by two transistor FET1 and FET2 voltage V1 is adjusted to optimal level, so it is corresponding to voltage controller of the present invention.
When receiving reset signal S1, data processor 23 visit flash memories 22 are to read the primary data of voltage V2.Then, data processor 23 outputs to register REG2 with voltage command signal S3.The voltage V2 that voltage command signal S3 is used for being fed to the electronic equipment 60 that links to each other with the output OUT2 of the 2nd DC-DC converter 40 is adjusted to the initial setting level.In the present embodiment, the initial setting level equals the rated voltage (for example 2.5V) of electronic equipment 60.
Register REG2 storage voltage command signal S3, and signal S3 is outputed to the D/A converter DAC2 of the 2nd DC-DC converter 40.Because register REG2 is with the voltage command signal S3 of easy disabling mode storage corresponding to primary data (initial setting level), so it is corresponding to register cell of the present invention (volatile storage).
D/A converter DAC2 will output to the in-phase input end of error amplifier ERA2 corresponding to the analog voltage signal (reference voltage) of voltage command signal S3.As shown in the figure, voltage V2 is fed back to the inverting input of error amplifier ERA2.Error amplifier ERA2 compares feedback voltage V 2 and reference voltage, the error output voltage is outputed to the positive input terminal (+) of PWM comparator PWM2.
Triangular signal is input to the negative input end (-) of PWM comparator PWM2 by triangular wave oscillator OSC2.Similar with above-mentioned PWM comparator PWM1, PWM comparator PWM2 outputs to the grid of main switching transistor FET3 and the grid of synchronous side switching transistor FET4 respectively with pwm signal and anti-phase pwm signal.By repeat pwm signal variation between low level and high level the samely in variation between high level and the low level and anti-phase pwm signal with the control method of voltage V1, voltage V2 is adjusted to original levels (being 2.5V in the present embodiment), then it is fed to electronic equipment 60 via output OUT2.Since the 2nd DC-DC converter 40 with feedback voltage V 2 with relatively and by conducting with by two switching transistor FET3 and FET4 voltage V2 is adjusted to initial set value corresponding to the analog signal (reference voltage) of voltage command signal S3, so it represents voltage controller of the present invention unit.
Yet be fed to the voltage V2 of electronic equipment 60 by the 2nd DC-DC converter 40 may be according to threshold voltage or resistance level etc. and different, is not in optimal level (for example 2.7V).Under this rough sledding, similar with method shown in Figure 3, electronic equipment 60 outputs to interface controller 21 with regulated voltage signal S15 (see figure 2) along iic bus IIC.Regulated voltage signal S15 is used for instructing the optimal level (present embodiment be 2.7V) of the 2nd DC-DC converter 40 to electronic equipment 60 supply voltage V2.
Then, interface controller 21 outputs to register REG2 and data processor 23 with regulated voltage signal S15.Register REG2 replaces voltage command signal S3 with regulated voltage signal S15 and stores, and signal S15 is outputed to the D/A converter DAC2 of the 2nd DC-DC converter 40.Since register REG2 supply unit 10 during to electronic equipment 60 supply voltage V2 with the received regulated voltage signal S15 of easy disabling mode memory interface controller 21, so it is corresponding to register cell of the present invention.On the other hand, data processor 23 is write data (voltage level that receives) the replacement primary data (initial setting level) of regulated voltage signal S15 in flash memory 22.
D/A converter DAC2 will output to the in-phase input end of error amplifier ERA2 corresponding to the analog voltage signal (reference voltage) of regulated voltage signal S15.Error amplifier ERA2 compares feedback voltage V 2 and reference voltage, the error output voltage is outputed to the positive input terminal (+) of PWM comparator PWM2.
Triangular signal is input to the negative input end (-) of PWM comparator PWM2 by triangular wave oscillator OSC2.PWM comparator PWM2 outputs to the grid of main switching transistor FET3 and the grid of synchronous side switching transistor FET4 respectively with pwm signal and anti-phase pwm signal.Similar with above-mentioned control method, pwm signal repeats to change between high level and low level, anti-phase pwm signal repeats to change between low level and high level simultaneously, thereby the voltage V2 that is fed to electronic equipment 60 via output OUT2 can be controlled at optimal level (2.7V).Because the 2nd DC-DC converter 40 is feedback voltage V 2 and corresponding to the analog signal (reference voltage) of regulated voltage signal S15 relatively, and by conducting with by two transistor FET3 and FET4 voltage V2 is adjusted to optimal level, so it is corresponding to voltage controller of the present invention unit.
When receiving reset signal S1, data processor 23 visit flash memories 22 are to read the primary data of negative voltage V3.Then, data processor 23 outputs to register REG3 with voltage command signal S4.The negative voltage V3 that voltage command signal S4 is used for being fed to the electronic equipment 60 that links to each other with the output OUT3 of the 3rd DC-DC converter 50 is adjusted to the initial setting level.In the present embodiment, the initial setting level equal electronic equipment 60 rated voltage (for example-2.5V).
Register REG3 storage voltage command signal S4, and signal S4 is outputed to the D/A converter DAC3 of the 3rd DC-DC converter 50.Because register REG3 is with the voltage command signal S4 of easy disabling mode storage corresponding to primary data (initial setting level), so it is corresponding to register cell of the present invention (volatile memory cell).
D/A converter DAC3 will output to the in-phase input end of error amplifier ERA3 corresponding to the analog voltage signal (reference voltage) of voltage command signal S4.As shown in the figure, voltage V3 is fed back to the inverting input of error amplifier ERA3.Error amplifier ERA3 compares feedback voltage V 3 and reference voltage, the error output voltage is outputed to the positive input terminal (+) of PWM comparator PWM3.
Triangular signal is input to the negative input end (-) of PWM comparator PWM3 by triangular wave oscillator OSC3.Similar with above-mentioned PWM comparator PWM1 or PWM2, PWM comparator PWM3 outputs to the grid of nmos pass transistor FET5 and the grid of nmos pass transistor FET6 respectively with pwm signal and anti-phase pwm signal.By repeating pwm signal variation between low level and high level in variation between high level and the low level and anti-phase pwm signal, voltage V3 is adjusted to original levels (in the present embodiment is-2.5V), and it is fed to electronic equipment 60 via output OUT3.Since the 3rd DC-DC converter 50 with feedback voltage V 3 with relatively and by conducting with by two switching transistor FET5 and FET6 voltage V3 is adjusted to initial set value corresponding to the analog signal (reference voltage) of voltage command signal S4, so it represents voltage controller of the present invention unit.
When the voltage V3 that is fed to electronic equipment 60 from the 3rd DC-DC converter 50 (for example-2.9V) but another level (2.5V) time is in optimal level, similar with method shown in Figure 3, electronic equipment 60 outputs to interface controller 21 with regulated voltage signal S 16 (see figure 2)s along iic bus IIC.Regulated voltage signal S16 is used to instruct the 3rd DC-DC converter 50 to the optimal level of electronic equipment 60 supply voltage V3 (2.9V).
Interface controller 21 outputs to register REG3 and data processor 23 with regulated voltage signal S16.Register REG3 replaces voltage command signal S4 with regulated voltage signal S16 and stores, and signal S16 is outputed to the D/A converter DAC3 of the 3rd DC-DC converter 50.Since register REG3 supply unit 10 during to electronic equipment 60 supply voltage V3 with the received regulated voltage signal S16 of easy disabling mode memory interface controller 21, so it is corresponding to register cell of the present invention.On the other hand, data processor 23 is write data (voltage level that receives) the replacement primary data (initial setting level) of regulated voltage signal S16 in flash memory 22.
D/A converter DAC3 will output to the in-phase input end of error amplifier ERA3 corresponding to the analog voltage signal (reference voltage) of regulated voltage signal S16.Error amplifier ERA3 compares feedback voltage V 3 and reference voltage, the error output voltage is outputed to the positive input terminal (+) of PWM comparator PWM3.
PWM comparator PWM3 outputs to the grid of nmos pass transistor FET5 and the grid of nmos pass transistor FET6 respectively with pwm signal and anti-phase pwm signal.Similar with above-mentioned control method, pwm signal repeats to change between high level and low level, anti-phase pwm signal repeats to change between low level and high level simultaneously, thereby the voltage V3 that is fed to electronic equipment 60 via output OUT3 can be controlled at optimal level (2.9V).Because the 3rd DC-DC converter 50 is feedback voltage V 3 and corresponding to the analog signal (reference voltage) of regulated voltage signal S16 relatively, and by conducting with by two nmos pass transistor FET5 and FET6 voltage V3 is adjusted to optimal level, so it is corresponding to voltage controller of the present invention unit.
The supply unit 10 of present embodiment allows the data (voltage level that receives) of regulated voltage signal S14 to S16 to keep being stored in the flash memory 22 (non-volatile memory cells), even power interruptions also is like this.When energized device 10 when the data (voltage level that receives) of regulated voltage signal S14 to S16 keep being stored in the flash memory 22, its first to the 3rd DC- DC converter 30,40 and 50 is activated, to determine voltage V1, V2 and V3 in response to the comparative result of voltage V1, v2 and V3 and its corresponding separately signal S14, S15 and S16 (voltage level that receives).When any voltage among voltage V1, V2 and the V3 is not in the optimal level of setting for electronic equipment 60, supply unit 10 controls to its optimal level in response to the regulated voltage signal that is received from electronic equipment 60 (voltage level that receives) with voltage V1, V2 or V3.
(effect of embodiment)
Control circuit 10A that is used for supply unit and supply unit 10 among the embodiment make interface controller 21 can receive regulated voltage signal S14 to S16, and make flash memory 22 to store in advance to be used for the original levels of determining voltage V1 to V3 primary data (initial setting level) and with the optimal level of the voltage of the corresponding electronic equipment 60 of regulated voltage signal S14 to S16 so that voltage V1 to V3 is being supplied to electronic equipment 60 in response to (the initial setting level) data and optimal level after being modified.Therefore, when energized device 10, its voltage V1 to V3 is set to by the original levels that is stored in the initial setting level decision in the flash memory 22, and the optimal level that is used for electronic equipment 60 can be stored in flash memory 22.When in when having no progeny once more energized device 10, can easily its voltage V1 to V3 be set to the required optimal level of its electronic equipment 60 in response to being stored in the optimum setting level (initial setting level) in the flash memory 22.The result, with each when supply unit 10 be activated with when electronic equipment 60 is powered all the situation of regulation voltage V1 to V3 compare, supply unit 10 is set to the required time of optimum setting level that is used for electronic equipment 60 in response to being stored in the optimum setting level in the flash memory 22 with voltage V1 to V3 can become shorter, thereby allows efficiently voltage V1 to V3 to be set to optimal level at a high speed.
Similarly, the control method of the supply unit 10 of this embodiment makes when receiving regulated voltage signal S14 to S16, the primary data (initial setting level) that is used for definite voltage V1 to V3 original levels can be stored in advance, and can store optimal level by the voltage that is used for electronic equipment 60 of regulated voltage signal S14 to S16 decision, so that voltage V1 to V3 is being supplied to electronic equipment 60 in response to (the initial setting level) data and optimal level after being modified.Therefore, when energized device 10, its voltage V1 to V3 is set to the original levels by the decision of initial setting level, and can store the optimal level that is used for electronic equipment 60.In the control method of supply unit 10, when in when having no progeny once more energized device 10, can easily its voltage V1 to V3 be set to the required optimal level of its electronic equipment 60 in response to the optimum setting level (initial setting level) of storage in advance.The result, with each when supply unit 10 be activated with when electronic equipment 60 is powered all the situation of regulation voltage V1 to V3 compare, supply unit 10 is set to voltage V1 to V3 in response to the optimum setting level the required time of optimum setting level that is used for electronic equipment 60 and can becomes shorter, thereby allows efficiently voltage V1 to V3 to be set to optimal level at a high speed.
And, control circuit 10A that is used for supply unit among the embodiment and supply unit 10 make flash memory 22 and register REG1 to REG3 can carry out following operation: when energized device 10, register REG1 to REG3 preserves the primary data (initial setting level) that data processor 23 is read from flash memory 22, and, preserve the optimal voltage level that is used for electronic equipment 60 by regulated voltage signal S14 to S16 decision when supply unit 10 during to the voltage of electronic equipment 60 supply such as V1.Therefore, when energized device 10, with reference to the primary data of preserving among the register REG1 to REG3 (initial setting level), the voltage such as V1 of supply unit 10 is set to its initial setting level.When supply unit 10 during to the voltage of electronic equipment 60 supply such as V1, with reference to the optimal level of preserving among the register REG1 to REG3, the voltage such as V1 of supply unit 10 is set to its optimal level.
Similarly, supply unit control method among the embodiment makes when energized device 10, can will read and store with the primary data (initial setting level) of nonvolatile mode storage with easy disabling mode, and, the optimal voltage level that is used for electronic equipment 60 by regulated voltage signal S14 to S16 decision can be stored with easy disabling mode when supply unit 10 during to the voltage of electronic equipment 60 supply such as V1.Therefore, when energized device 10, with reference to the primary data (initial setting level) of preserving with easy disabling mode, the voltage such as V1 of supply unit 10 is set to its initial setting level.When supply unit 10 during to the voltage of electronic equipment 60 supply such as V1, with reference to the optimal level with easy disabling mode storage, the voltage such as V1 of supply unit 10 is set to its optimal level.
And control circuit 10A that is used for supply unit among the embodiment and supply unit 10 make the voltage V1 to V3 that wins and can revise in response to the primary data that is stored in register REG1 to REG3 (initial setting level) or optimal level to electronic equipment 60 supply to the 3rd DC-DC converter 30 to 50.Therefore, need when each energized device 10, all separately voltage V1 to V3 be adjusted to its initial set value.With reference to the initial setting level, can be by first to the 3rd DC-DC converter 30 to 50 effectively to electronic equipment 60 supply voltage V1 to V3.In addition, at control circuit 10A that is used for supply unit and supply unit 10, need when supplying voltage V1 to V3, electronic equipment 60 separately voltage V1 to V3 be adjusted to its initial set value at supply unit 10.On the contrary, the optimal level with reference to being stored in the register that comprises REG1 can efficiently and at high speed be set to its optimal level with voltage V1 to V3 by first to the 3rd DC-DC converter 30 to 50.
Similarly, the supply unit control method among the embodiment allows to electronic equipment 60 supplies in response to the voltage V1 to V3 that has revised with the primary data (initial setting level) of easy disabling mode storage or optimal level.Therefore, need when each energized device 10, all separately voltage V1 to V3 be adjusted to its initial set value.Can be effectively to the voltage V1 to V3 of electronic equipment 60 supplies by the decision of initial setting level.In addition, the control method of supply unit 10 need not be adjusted to its initial set value with voltage V1 to V3 separately at supply unit 10 when electronic equipment 60 is supplied voltage V1 to V3.On the contrary, the optimal level that is used for electronic equipment 60 with reference to easy disabling mode storage can efficiently and at high speed be set to its optimal level with voltage V1 to V3.
Control circuit 10A that is used for supply unit among the embodiment and supply unit 10 make that at supply unit 10 register REG1 to REG3 can be used for the optimal level replacement primary data (initial setting level) of electronic equipment 60 and store when electronic equipment 60 is supplied voltage V1 to V3.Therefore, when supply unit 10 during, can efficiently and at high speed voltage V1 to V3 be set to its optimal level in response to the optimal level that is used for electronic equipment 60 that is stored among the register REG1 to REG3 to electronic equipment 60 supply voltage V1 to V3.
Similarly, the supply unit control method among the embodiment makes at supply unit 10 during to electronic equipment 60 supply voltage V1 to V3, and the optimal level that can be used for electronic equipment 60 replaces primary data (initial setting level) and stores with nonvolatile mode.Therefore, can efficiently and at high speed voltage V1 to V3 be set to its optimal level in response to optimal level with the nonvolatile mode storage.
Control circuit 10A that is used for supply unit among the embodiment and supply unit 10 make data processor 23 to write data (voltage level that receives) with storage voltage conditioning signal S14 to S16 at flash memory 22, replace primary data (initial setting level).Therefore, can determine that the data (voltage level that receives) of voltage V1 to V3 optimal level are stored in flash memory 22 (non-volatile memory cells) and do not lose any data with being used for.
Similarly, the supply unit control method among the embodiment allows the data (voltage level that receives) of storage voltage conditioning signal, replaces the primary data (initial setting level) of storing with nonvolatile mode in advance.Therefore, can be used for the data (voltage level that receives) of definite voltage V1 to V3 optimal level and not lose any data with the nonvolatile mode storage.
Control circuit 10A that is used for supply unit among the embodiment and supply unit 10 make flash memory 22 (non-volatile memory cells) can preserve voltage-regulation data (voltage level that receives).Therefore, can with nonvolatile mode safely storage voltage regulate data (voltage level that receives) and do not lose any data, even also be like this during power interruptions.
Similarly, the supply unit control method among the embodiment allows the voltage-regulation data (voltage level that receives) with nonvolatile mode storage voltage conditioning signal.Therefore, storage voltage is regulated data (voltage level that receives) and is not lost any data safely.
Control circuit 10A that is used for supply unit among the embodiment and supply unit 10 make interface controller 21 regulated voltage signal S14 to S16 can be outputed to register REG1 to REG3 and data processor 23, so that regulated voltage signal S14 to S16 (voltage-regulation data) is stored among the register REG1 to REG3 (volatile memory cell), and be stored in the flash memory 22 (non-volatile memory cells) with corresponding its voltage-regulation data of signal S14 to S16 (voltage level that receives).With the voltage-regulation storage in register REG1 to REG3 the time, concurrently with the storage of the voltage level that receives in flash memory 22.Therefore, be stored in register REG1 to REG3 in succession with the data of voltage-regulation data and the voltage level that receives and compare, can improve the efficient of supply unit 10 with the situation in the flash memory 22.
Similarly, the control method of the supply unit 10 among the embodiment allows to regulate data with easy disabling mode storage voltage, and stores the data of the voltage level that receives with nonvolatile mode.When regulating data, store the data of the voltage level that receives concurrently with nonvolatile mode with easy disabling mode storage voltage.Therefore, compare with the situation of nonvolatile mode storage with easy disabling mode in succession, can improve the efficient of supply unit 10 with the data of voltage-regulation data and the voltage level that receives.
The present invention is not limited to above embodiment, revises and realizes that this can not depart from the scope of the present invention but can structurally carry out part.The control circuit 10A that is used for supply unit among the embodiment and supply unit 10 allows regulated voltage signal S14 to S16 (voltage-regulation data) is stored in register REG1 to REG3 (volatile memory cell), and will with the storage of the corresponding voltage level that receives of regulated voltage signal S14 to S16 in flash memory 22 (non-volatile memory cells).Perhaps, can before the storage of the voltage level that will receive is in flash memory 22 (non-volatile memory cells), regulated voltage signal S14 to S16 (voltage-regulation data) be stored among the register REG1 to REG3 (volatile memory cell).Therefore, when the voltage V1 to V3 that will be supplied to electronic equipment 60 in response to being stored in the voltage-regulation data among the register REG1 to REG3 efficiently and has at high speed set optimal level for, with the storage of the voltage level that receives in flash memory 22 and do not lose any data.In other words, can preferentially will be supplied to the voltage V1 to V3 of electronic equipment 60 to be set to optimal level, and then with the storage of the voltage level that receives obliterated data in flash memory 22 and not.
Can revise the control method of supply unit 10, wherein before the data of the voltage level that receives with the nonvolatile mode storage, with easy disabling mode storage voltage conditioning signal S14 to S16 (voltage-regulation data).Therefore, when the voltage V1 to V3 that will be supplied to electronic equipment 60 in response to regulating data with easy disabling mode stored voltage efficiently and has at high speed set optimal level for, the data of the voltage level that storage receives and do not lose any data.In other words, can preferentially will be supplied to the voltage V1 to V3 of electronic equipment 60 to be set to optimal level, and then store the data of the voltage level that receives.
Though as shown in Figure 1, the supply unit 10 among the embodiment has the output unit that is used for three passages (CH1 is to CH3), and it also can have the output unit of four or more a plurality of respective channel.And flash memory 22 can also be kept for the control program of supply unit 10 except preserving primary data (initial setting level).Control circuit 10A in the supply unit 10 of embodiment can comprise one or more semiconductor chips.Supply unit 10 also can comprise one or more semiconductor chips.Supply unit 10 and control circuit 10A thereof can be arranged in the module.And electronic equipment can comprise the supply unit with control circuit and DC-DC converter.
Control circuit, supply unit and the control method thereof that is used for supply unit of the present invention is set to receive the voltage level that also storage requires from the electronic equipment that will be powered when having stored the initial setting level that is used for definite initial voltage level in advance.This makes and can and require level to control the voltage that will supply in response to the initial setting level.The result, with at every turn start with the time all the situation of regulation voltage and compare power electronic equipment at supply unit, voltage being set to the required time of the desired optimum setting level of electronic equipment in response to the setting level of being stored can become shorter, thereby allows efficiently voltage to be set to optimal level at a high speed.
The application is the Japanese patent application formerly 2006-047819 number on February 24th, 2006 based on the applying date, and requires its priority, has merged this full content in first to file by reference at this.

Claims (14)

1. control circuit that is used for supply unit, described supply unit is used for to the supply of equipment required voltage, and described equipment provides initial voltage, requires then to receive the described required voltage that is different from described initial voltage, and described control circuit comprises:
Communication unit is used to receive the level that requires of described required voltage; And
Memory cell is used for storing in advance the initial setting level that is used for determining described initial voltage, and stores the described level that requires that described communication unit receives, wherein
Control described initial voltage or described required voltage in response to described initial setting level or the described level that requires,
Wherein said memory cell comprises:
Non-volatile memory cells has wherein been stored described initial setting level at least in advance; And
Register cell is used to store described initial setting level and the described level that requires, and
The wherein said register cell initial setting level that storage is read from described non-volatile memory cells when described supply unit starts, and when described supply unit is operated, store the level that requires that described communication unit receives.
2. the control circuit that is used for supply unit as claimed in claim 1 also comprises:
The voltage controller unit is used for controlling described initial voltage or described required voltage in response to described initial setting level that is stored in described register cell or the described level that requires.
3. the control circuit that is used for supply unit as claimed in claim 1, wherein
When described supply unit was operated, described register cell required level to replace described initial setting level and stores described.
4. the control circuit that is used for supply unit as claimed in claim 1, wherein
Described non-volatile memory cells requires level to replace the initial setting level of described storage in advance and stores described.
5. the control circuit that is used for supply unit as claimed in claim 1, wherein
The described level that requires is to be received by described communication unit, is stored in simultaneously then in described register cell and the described non-volatile memory cells.
6. the control circuit that is used for supply unit as claimed in claim 1, wherein
The described level that requires is stored in the described register cell after being received by described communication unit, is stored in then in the described non-volatile memory cells.
7. a supply unit is used for to the supply of equipment required voltage, and described equipment provides initial voltage, requires then to receive the described required voltage that is different from described initial voltage, and described supply unit comprises:
Communication unit is used to receive the level that requires of described required voltage; And
Memory cell is used for storing in advance the initial setting level that is used for determining described initial voltage, and stores the described level that requires that described communication unit receives, wherein
Control described initial voltage or described required voltage in response to described initial setting level or the described level that requires,
Wherein said memory cell comprises:
Non-volatile memory cells has wherein been stored described initial setting level at least in advance; And
Register cell is used to store described initial setting level and the described level that requires, and
The wherein said register cell initial setting level that storage is read from described non-volatile memory cells when described supply unit starts, and when described supply unit is operated, store the level that requires that described communication unit receives.
8. supply unit as claimed in claim 7 comprises:
The voltage controller unit is used for controlling described initial voltage or described required voltage in response to described initial setting level that is stored in described register cell or the described level that requires.
9. supply unit as claimed in claim 7, wherein
When described supply unit was operated, described register cell required level to replace described initial setting level and stores described.
10. supply unit as claimed in claim 7, wherein
Described non-volatile memory cells requires level to replace the initial setting level of described storage in advance and stores described.
11. supply unit as claimed in claim 7, wherein
The described level that requires is to be received by described communication unit, is stored in simultaneously then in described register cell and the described non-volatile memory cells.
12. supply unit as claimed in claim 7, wherein
The described level that requires is stored in the described register cell after being received by described communication unit, is stored in then in the described non-volatile memory cells.
13. a supply unit control method, described supply unit are used for to the supply of equipment required voltage, described equipment provides initial voltage, requires then to receive the described required voltage that is different from described initial voltage, said method comprising the steps of:
Receive the level that requires of described required voltage;
Storage in advance is used for determining the initial setting level of described initial voltage, and stores the received described level that requires; And
Control described initial voltage or described required voltage in response to described initial setting level or the described level that requires,
Wherein said storing step comprises:
At least in advance store described initial setting level with nonvolatile mode;
Store described initial setting level and the described level that requires with easy disabling mode; And
When described supply unit starts, read described initial setting level, and store described initial setting level with easy disabling mode with the nonvolatile mode storage; And when described supply unit is operated, store the received level that requires with easy disabling mode.
14. supply unit control method as claimed in claim 13, wherein
The described level that requires is replaced storing with nonvolatile mode with the initial setting level of nonvolatile mode storage in advance.
CN2006100875032A 2006-02-24 2006-06-13 Control circuit for power supply device, power supply device, and control method thereof Expired - Fee Related CN101026335B (en)

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JP4771828B2 (en) 2011-09-14

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