CN100581333C - Cooling substrate of micro heat pipe - Google Patents
Cooling substrate of micro heat pipe Download PDFInfo
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- CN100581333C CN100581333C CN 200610123676 CN200610123676A CN100581333C CN 100581333 C CN100581333 C CN 100581333C CN 200610123676 CN200610123676 CN 200610123676 CN 200610123676 A CN200610123676 A CN 200610123676A CN 100581333 C CN100581333 C CN 100581333C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The present invention relates to an electronic component radiating substrate, in particular to a micro heat pipe radiating substrate. The micro heat pipe radiating substrate is formed by a plurality of layers of flat plate radiating layer. A micro heat pipe structure is manufactured in an upper radiating layer and a lower radiating layer to be provided with a hot end and a cold end in vertical direction. A temperature control ceramic layer at the bottom is used for controlling the temperature of the cold end, so the whole substrate is provide with radiating and temperature control functions. Compared with the traditional metal (or ceramic) substrate, the substrate adopts the design of the micro heat pipe structure and the cold end temperature control. So the present invention not only is characterized by strong heat transport capacity, good radiating and soaking, but also is capable of controlling the temperature of the substrate. The novel substrate is used in the electron field of semiconductor light emitting diode, semiconductor laser device, semiconductor component, integrated circuit and CPU and so on and is of advantages.
Description
Technical field
The present invention relates to the electronic element radiating substrate, particularly relate to a kind of cooling substrate of micro heat pipe.
Background technology
The development of electronics and related industry has two main trend, and the one, pursue miniaturization and integrated, the 2nd, pursue high-frequency and high arithmetic speed, cause the caloric value of unit volume electronic devices and components to heighten.In fact, the heat dissipation problem of electronic equipment has become the bottleneck of restriction microelectronics industry development.Investigate the cooling problem of modern electronic equipment, generally be divided into 3 levels, the 1st level: heat is delivered to substrate from chip, and baseplate material is generally plastics, metal and pottery; The 2nd level: heat is delivered to coldplate from substrate; The 3rd level: heat is passed to atmosphere.Traditionally, the heat radiation of the 2nd and the 3rd level relies on the free convection or the forced convertion mode of air to realize.The quality of heat radiation situation will directly have influence on the stability of electronic device works, and the increasing of chip operation temperature can bring the electron transfer in the semiconductor, thereby cause chip failure even burn.There is data to show, every rising 8 degree of the working temperature of electronic equipment, failure rate increases by 1 times.When the chip caloric value when 3～4W is above, the heat dispersion of general baseplate material is difficult to deal with.Therefore, how to improve the heat dispersion of substrate, making circuit work under normal temperature becomes a problem demanding prompt solution.Except the maximum temperature restriction, electronic equipment also has higher requirement to uniform temperature.The even service behaviour that also will influence chip of integrated circuit surface temperature distributing disproportionation, traditional radiating mode adopts aluminum, copper fin, perhaps adopts the fan heat radiation.This can not satisfy the needs of electronic device steady operation, and especially the less electronic equipment in internal heat dissipating space can't adopt traditional radiating mode, must adopt new technology to be used for electronic equipment heat radiation and temperature distribution.Compare with traditional heat-dissipating equipment, adopt the heat pipe of freezing by change of state to need not consumption of power " bulk is little " cooling capacity height, the soaking performance is good, the heat output height of unit are.In recent years, miniature low profile thermal Manifold technology was used for the cool electronic components and parts and had obtained very big development, became the key areas that heat pipe is used.
In present all known electronics types of cooling, micro heat pipe has obtained to confirm to be the type of cooling of the best and tool potentiality of heat transfer property.The micro heat pipe technology is applied in widely that airborne vehicle thermal control, high power electronic are refrigerated, nuclear reactor and Chemical Engineering are used and the MEMS device application.Hot pipe technique is a kind of external drive that need not, by the technology of self absorbing heat and dispelling the heat as power, in the application that extensive maturation is arranged aspect the large scale heat radiation, maturation along with MEMS technology and Micrometer-Nanometer Processing Technology, micro heat pipe (MHP) cooling technology becomes one of the most attractive integrated circuit and electronic chip heat dissipation technology, and simultaneously it is used in widely also that airborne vehicle thermal control, high power electronic are refrigerated, nuclear reactor and Chemical Engineering etc. use.Analysis and test by the opposite heat tube performance show that with respect to other cooling technologies, the micro heat pipe technology has the distinguishing feature of efficient heat transfer and elimination thermojunction.At Charlott Gillot, Seok HwanMoon, also having set up various in people's such as Ravi S.Prasher the research is the properties of hot pipe analytical model of prerequisite with the experimental data.And the feasible micro heat pipe based on silicon of the development of MEMS technology receives publicity day by day.Because the matching good with si-substrate integrated circuit, the silicon micro heat pipe has received great concern.But, adopt semiconductor technology based on the micro heat pipe of silicon, be difficult for simple processing, simultaneously the cost height.More disadvantageously, silicon materials itself are very crisp, and it is very thin to make silica-based micro heat pipe, are unfavorable for large-scale processed and applied, so just limited the scope of application of silica-based micro heat pipe.
Relative silicon materials, some ceramic material as the AlN pottery, has following characteristics: the thermal conductivity height, thermal coefficient of expansion and silicon are approaching, and various electrical properties are good.Therefore, ceramic material is a kind of good baseplate material.Aspect baseplate material, past is directly to use Copper Foil printed circuit board (PCB) (Printed Circuit Board, PCB) dispel the heat, just modal FR4 tellite, yet along with the heating of electronic component is more and more high, the FR4 tellite is difficult to enjoy gradually, and reason is its pyroconductivity not enough (only 0.36W/m.K).In order to improve the heat radiation of circuit board aspect, therefore printed circuit board (PCB) (the Metal Core PCB of so-called metallic core has been proposed, MCPCB), promptly be that original printed circuit board (PCB) is affixed on (as: aluminium, copper) on the better metal of another thermal conduction effect, come the enhance heat effect with this, and this sheet metal is positioned at printed circuit board (PCB), so just be called (Metal Core), the heat conduction efficiency of MCPCB just is higher than traditional F R4 PCB, reaches 1W/m.K～2.2W/m.K.But, MCPCB is some restriction also, can not be above 140 ℃ when Circuits System operates, this mainly is from dielectric layer (Dielectric Layer, also claim Insulated Layer, insulating barrier) characteristic limitations, also must not be in this external manufacture process above 250 ℃～300 ℃.And ceramic substrate (Ceramic Substrate), or so-called direct copper bonded substrate (DirectCopper Bonded Substrate, be called for short: DBC), or the metallic composite substrate.Be the high conductance that ceramic substrate or direct copper bonded substrate all have 24～170W/m.K, wherein directly the copper bonded substrate more allows process temperatures, operational temperature to reach more than 800 ℃, is a kind of advantageous substrate technology of ceramic substrate therefore.
In addition, for most of semi-conductor electricity sub-elements, they all are the responsive to temperature type devices, and extraneous variations in temperature can influence the performance of device.LED for example, ambient temperature changes the variation of the LED device junction temperature that causes, and will influence the light output variable of LED, the reliability of photochromic and device.Therefore, the substrate with temperature controlling function will improve the performance of device greatly.Traditional temperature control technique generally adopts temperature to survey and feedback circuit control aspect, and complexity is unfavorable for integrated and miniaturization, has increased extra cost simultaneously, and design complexities has also increased.
Summary of the invention
The objective of the invention is the problem that exists at existing electronic element radiating substrate, a kind of perfect heat-dissipating, soaking are provided and can have had the heat-radiating substrate of temperature controlling function.
In order to realize good heat sinking function, the present invention adopts the micro heat pipe technology, and the top heat dissipating layer with micro heat pipe array of structures is set below top ceramic layer.
In order further to improve radiating effect, the present invention is provided with the bottom heat dissipating layer below the heat dissipating layer of top, also be provided with the micro heat pipe array of structures on the heat dissipating layer of bottom, separate by the insulating ceramic layer between the heat dissipating layer of top and the bottom, also be provided with the internal communication pipeline between the heat dissipating layer of top and the bottom, be communicated with the formation loop.So, the top and the bottom heat dissipating layer forms cold and hot two ends.
In order to realize temperature controlling function, the present invention is provided with the temperature control ceramic layer below the heat dissipating layer of bottom, and the temperature control ceramic layer is embedded with resistance wire.Control the temperature of top heat dissipating layer by the temperature of control bottom heat dissipating layer.The resistance wire that adopts is to have the very metal material of high resistance linearity, can reach the purpose of controlling resistance temperature by the resistance of control metal material, is applied to cooling substrate of micro heat pipe, reaches the purpose of temperature control.
Be evacuated in the heat dissipating layer of top and the bottom, inside is packaged with liquid, as methyl alcohol, ethanol, water or other cooling agents (as electronics cooling agent FC-72).Heat dissipating layer used material in top and the bottom is preferably potsherd or sheet metal (as aluminium sheet, copper coin or corrosion resistant plate etc.).The cross section of micro heat pipe can be triangle, rectangle, star or other shapes.The insulating ceramic layer can be mica sheet or the not high ceramic material of other conductive coefficient.
Top ceramic layer adopts electroplating technology or silk screen printing to make electrode, the method of machining or laser processing is made ceramic inner micro heat pipe array and connecting pipe, the temperature control ceramic layer forms by pottery and embedded high linear resistance silk sintering, and various piece takes welding or ceramic post sintering to form then.
5 layers of structure of the present invention are not indispensable, and the structure that for example includes only top ceramic layer and top heat dissipating layer falls into protection range of the present invention; Do not adopt bottom temperature control potsherd, make substrate inside have temperature controlling function to belong to protection scope of the present invention yet by designing bilevel micro heat pipe array structure; For multilayer micro heat pipe structure, also belong to protection scope of the present invention.
Compared with prior art, the present invention has following beneficial effect: for solve in the conventional substrate radiating efficiency not good, can not temperature control and the not strong shortcoming of practicality, the present invention provides the cooling substrate of micro heat pipe structure in conjunction with micro heat pipe technology, ceramic substrate technology and novel temperature control technique.Cooling substrate of micro heat pipe of the present invention has 5 layers of structure, and perfect heat-dissipating, soaking and temperature controllable need not pump as power source, noiseless during work, also Maintenance free.The work coolant is liquid, and is safe and reliable to operation.Adopt potsherd, sturdy and durable, radiating efficiency height and Controllable Temperature.Can be used in that LCD shows and airborne vehicle thermal control, high power electronic are refrigerated, nuclear reactor, Chemical Engineering is used and the MEMS device application on.
Description of drawings
Fig. 1 is structural representation and each layer exploded view of square cooling substrate of micro heat pipe;
Fig. 2 is structural representation and each layer exploded view of circular cooling substrate of micro heat pipe;
Fig. 3 is the enlarged drawing of top and the bottom heat dissipating layer;
Fig. 4 is a cooling substrate of micro heat pipe operation principle schematic diagram;
Fig. 5 is the preparation flow figure of cooling substrate of micro heat pipe;
Fig. 6 is the cross sectional representation of three kinds of shapes of micro heat pipe;
Fig. 7 is the schematic diagram of cooling substrate of micro heat pipe as great-power electronic element radiating substrate;
Fig. 8 is the schematic diagram of cooling substrate of micro heat pipe as multicore sheet electronic element radiating substrate.
Wherein: 1. cooling substrate of micro heat pipe; 2. top ceramic layer; 3. top heat dissipating layer; 4. insulating ceramic layer; 5. bottom heat dissipating layer; 6. temperature control ceramic layer; 7. micro heat pipe; 8. connecting pipe; 9. resistance wire; 10. electrode; 11. chip; 12. spun gold.
Embodiment
Among Fig. 1, left figure is the schematic diagram of whole cooling substrate of micro heat pipe 1, and right figure is each layer structure chart of cooling substrate of micro heat pipe 1.This cooling substrate of micro heat pipe 1 constitutes by 5 layers, and top ceramic layer 2 is the high potsherd of thermal conductivity, can make the required cup bowl shape of circuit or LED encapsulation above.The 2nd layer is potsherd (or sheet metal) heat dissipating layer 3 with micro heat pipe array of structures, and micro heat pipe 7 arraies of structures of rectangular configuration are arranged above, and its edge forms path by connecting pipe 8 and bottom micro heat pipe.The 3rd layer is insulating ceramic layer 4, and purpose is bilevel micro heat pipe heat dissipating layer is formed hot junction and cold junction, and its internal communication pipeline 8 makes that bilevel micro heat pipe can intercommunication.The 4th layer for having potsherd (or sheet metal) heat dissipating layer 5 of micro heat pipe array, and its internal pipeline passes through connecting pipe 8 intercommunications with the 2nd layer micro heat pipe.The 5th layer is temperature control ceramic layer 6, and this temperature control ceramic layer 6 is formed by pottery and linear fabulous resistance wire 9 sintering, by the resistance of external circuit adjusting resistance wire, just can accurately control the temperature of this ceramic layer 6.The present invention reaches the purpose of the temperature of the whole cooling substrate of micro heat pipe 1 of control by the temperature of circuit control bottom ceramic layer 6.Micro heat pipe 7 inside are evacuated, and liquid such as the water of feeding proper ratio or alcohol.
Cooling substrate of micro heat pipe 1 also can adopt circular substrate, as shown in Figure 2.
The enlarged drawing of top and the bottom heat dissipating layer 3,5 is seen Fig. 3, and in conjunction with Fig. 4, the basic principle of the present invention and the course of work are as follows: after whole cooling substrate of micro heat pipe 1 vacuumized and injects partially liq, because capillary effect, liquid storage was in the sharp corner in cross section.When being subjected to localized heating for the plane at cooling substrate of micro heat pipe top, shown in the A-A plane, evaporation process results from liquid-vaqor interface place in the micro heat pipe array of top rapidly, thereby heat is delivered to rapidly in the adjacent passage.Heat also is transported to the micro heat pipe array of bottom by pipeline by the micro heat pipe array ceramic sheet 3 on top simultaneously.Because heating only occurs in small size thermal source plane, the potsherd temperature of bottom is relatively low, therefore in micro heat pipe potsherd 3 edges, top and bottom micro heat pipe potsherd 5, be the non-thermal treatment zone, liquid-vaqor interface place (shown in the B condensation end) produces condensation process, and condensate liquid is back to the thermal treatment zone under capillary effect.The micro heat pipe potsherd 5 of bottom is subjected to the temperature control effect of bottom temperature control potsherd 6 simultaneously, thereby controls the temperature of whole cooling substrate of micro heat pipe 1 by the temperature of control micro heat pipe cold junction.
The preparation of cooling substrate of micro heat pipe 1 is as shown in Figure 5: top ceramic layer 1 is made electrode or cup bowl according to actual needs; Top and the bottom micro heat pipe heat dissipating layer 3,5 is at internal production micro heat pipe array and connecting pipe 8; Insulating ceramic layer 4 is at internal production connecting pipe 8; Temperature control ceramic layer 6 forms by pottery and embedded high linear resistance silk 9 sintering; Various piece takes welding or ceramic post sintering to form then.
The heat-transfer capability of micro heat pipe is relevant with the content of pipeline profile, size and liquid, therefore chooses suitable design parameter, and is helpful to the heat-sinking capability that improves cooling substrate of micro heat pipe.In addition, also can make the micro heat pipe array self temp regulating function be arranged by the relevant parameter of micro heat pipe about the design.Micro heat pipe array cross section can be shape shown in Figure 6.
Cooling substrate of micro heat pipe can be used as the heat-radiating substrate of large power, electrically sub-element (as LED, LD, CPU, IC etc.), as shown in Figure 7.Make interconnection circuit in the cooling substrate of micro heat pipe upper end, the lead-in wire that can make electronic component connects and interconnecting channels.During work, the heat that the large power, electrically sub-element distributes passes on the heat radiation Connection Element of base plate bottom by the bottom cooling substrate of micro heat pipe, thereby has suppressed the temperature rise and the excessive temperature of electronic component.When ambient temperature changed, the temperature control potsherd 6 of substrate lower end always worked under the uniform temperature, thereby had avoided having caused the electronic component variations in temperature owing to ambient temperature changes, and had improved the reliability of electronic component.
Cooling substrate of micro heat pipe can be used as the substrate of multicore sheet electronic package, as shown in Figure 8.Multiple chips is highdensity to be encapsulated on the cooling substrate of micro heat pipe, and the cooling substrate of micro heat pipe upper end can make interconnection circuit and cup bowl (for LED, this glass bowl can be the reflector bowl).Because the equal thermal effect of this cooling substrate of micro heat pipe can be realized very highdensity multicore sheet encapsulation, this is that the conventional substrate technology is inaccessiable.In multicore sheet when work,, the heat that the multicore sheet produces takes other cooling device of lower end to by cooling substrate of micro heat pipe, and what produce during the work of multicore sheet uneven in temperaturely also can improve by the soaking performance of this cooling substrate of micro heat pipe.
That LED automobile lamp holder must possess is high-power, high efficiency and working temperature be-40 ℃ to 125 ℃ high reliability, and consistency must be stablized and have to its optics, electrical parameter in addition, and light intensity decays can not be above 20 ℃; The wherein the most formidable part is the problem of heat radiation.As long as led chip runs into high temperature, luminous efficiency will decay even damage, and the work of general recommendations is below 80 ℃.Cooling substrate of micro heat pipe of the present invention can be used for the heat radiation of LED car light.
Claims (8)
1, a kind of cooling substrate of micro heat pipe, the top heat dissipating layer (3) that it is characterized in that comprising top ceramic layer (2) and be arranged on top ceramic layer (2) below, top heat dissipating layer (3) is provided with micro heat pipe (7) array of structures, described top heat dissipating layer (3) below also is provided with bottom heat dissipating layer (5), also is provided with micro heat pipe (7) array of structures on the bottom heat dissipating layer (5); Be provided with ceramic insulation layer (4) and connecting pipe (8) between the top and the bottom heat dissipating layer (3,5).
2, cooling substrate of micro heat pipe as claimed in claim 1 is characterized in that described bottom heat dissipating layer (5) below also is provided with temperature control ceramic layer (6), and temperature control ceramic layer (6) is embedded with resistance wire (9).
3, cooling substrate of micro heat pipe as claimed in claim 1 is characterized in that described top and the bottom heat dissipating layers (3,5) are potsherd or sheet metal.
4, cooling substrate of micro heat pipe as claimed in claim 1 is characterized in that being evacuated in the described top and the bottom heat dissipating layers (3,5), and inside is packaged with liquid.
5, cooling substrate of micro heat pipe as claimed in claim 4 is characterized in that described liquid is methyl alcohol, ethanol, water or other cooling agents.
6, cooling substrate of micro heat pipe as claimed in claim 1 is characterized in that the cross section of described micro heat pipe (7) can be triangle, rectangle, star or other shapes.
7, cooling substrate of micro heat pipe as claimed in claim 1 is characterized in that the micro heat pipe (7) of described top and the bottom heat dissipating layers (3,5) forms the closed-loop path by connecting pipe (8).
8, cooling substrate of micro heat pipe as claimed in claim 1 is characterized in that described connecting pipe (8) is hole, triangle hole or other connecting pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 200610123676 CN100581333C (en) | 2006-11-21 | 2006-11-21 | Cooling substrate of micro heat pipe |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200610123676 CN100581333C (en) | 2006-11-21 | 2006-11-21 | Cooling substrate of micro heat pipe |
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| CN101175389A CN101175389A (en) | 2008-05-07 |
| CN100581333C true CN100581333C (en) | 2010-01-13 |
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| CN 200610123676 Expired - Fee Related CN100581333C (en) | 2006-11-21 | 2006-11-21 | Cooling substrate of micro heat pipe |
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| US8391010B2 (en) * | 2010-08-19 | 2013-03-05 | Apple Inc. | Internal frame optimized for stiffness and heat transfer |
| CN101956920B (en) * | 2010-10-20 | 2012-05-23 | 重庆三弓科技发展有限公司 | Liquid cooling type light-emitting diode (LED) radiating lamp |
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| CN104242814A (en) * | 2014-09-29 | 2014-12-24 | 谢英健 | Photovoltaic solar junction box |
| US10486232B2 (en) | 2015-04-21 | 2019-11-26 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor manufacturing device with embedded fluid conduits |
| CN106024736B (en) * | 2016-07-18 | 2019-05-24 | 上海交通大学 | Integrated low-grade fever tube radiator based on MEMS technology |
| CN107634037A (en) * | 2017-03-02 | 2018-01-26 | 天津开发区天地信息技术有限公司 | High heat conduction package substrate |
| CN111725196B (en) * | 2020-06-30 | 2023-11-28 | 长沙安牧泉智能科技有限公司 | High-temperature in-situ ultraviolet detection system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5179043A (en) * | 1989-07-14 | 1993-01-12 | The Texas A&M University System | Vapor deposited micro heat pipes |
| CN2522409Y (en) * | 2002-02-25 | 2002-11-27 | 中国科学院理化技术研究所 | Minisize hot-pipe with nono core-body |
| CN2745220Y (en) * | 2004-05-09 | 2005-12-07 | 王亚盛 | Large power multi-die integrated LED module |
| CN2798312Y (en) * | 2004-12-02 | 2006-07-19 | 华为技术有限公司 | Microchannel substrate |
| CN1816918A (en) * | 2003-06-30 | 2006-08-09 | 皇家飞利浦电子股份有限公司 | Light-emitting diode thermal management system |
-
2006
- 2006-11-21 CN CN 200610123676 patent/CN100581333C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5179043A (en) * | 1989-07-14 | 1993-01-12 | The Texas A&M University System | Vapor deposited micro heat pipes |
| CN2522409Y (en) * | 2002-02-25 | 2002-11-27 | 中国科学院理化技术研究所 | Minisize hot-pipe with nono core-body |
| CN1816918A (en) * | 2003-06-30 | 2006-08-09 | 皇家飞利浦电子股份有限公司 | Light-emitting diode thermal management system |
| CN2745220Y (en) * | 2004-05-09 | 2005-12-07 | 王亚盛 | Large power multi-die integrated LED module |
| CN2798312Y (en) * | 2004-12-02 | 2006-07-19 | 华为技术有限公司 | Microchannel substrate |
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| CN101175389A (en) | 2008-05-07 |
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