CN100570887C - The high speed gallium arsenide based channel strain high electron mobility transistor material - Google Patents

The high speed gallium arsenide based channel strain high electron mobility transistor material Download PDF

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CN100570887C
CN100570887C CNB2007100633752A CN200710063375A CN100570887C CN 100570887 C CN100570887 C CN 100570887C CN B2007100633752 A CNB2007100633752 A CN B2007100633752A CN 200710063375 A CN200710063375 A CN 200710063375A CN 100570887 C CN100570887 C CN 100570887C
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CN101221984A (en
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徐静波
张海英
叶甜春
尹军舰
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Beijing Zhongke Micro Investment Management Co ltd
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Institute of Microelectronics of CAS
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Abstract

The present invention relates to the compound semiconductor materials technical field, disclose a kind of high speed gallium arsenide based channel MHEMT material, this MHEMT material is by epitaxially grown successively lattice strain layer In on the GaAs substrate xAl 1-xAs, raceway groove lower barrierlayer In 0.52Al 0.48As, channel layer doping InP, channel layer undope InP, channel layer In 0.53Ga 0.47As, spatial separation layer In 0.52Al 0.48As, plane doping layer, barrier layer In 0.52Al 0.48As and highly doped block layer In 0.53Ga 0.47As constitutes.Utilize the present invention, combine In 0.53Ga 0.47InP has the characteristic of high threshold energy and high saturation rate under the low field high electron mobility of As and the High-Field, solved the low shortcoming of conventional MHEMT device source drain breakdown voltage, reached and both improved the source drain breakdown voltage, guaranteed that again device has the purpose of superior millimeter-wave frequency characteristic.

Description

The high speed gallium arsenide based channel strain high electron mobility transistor material
Technical field
The present invention relates to the compound semiconductor materials technical field, relate in particular to a kind of high speed gallium arsenide based channel strain high electron mobility transistor material.
Background technology
High Electron Mobility Transistor (HEMT) have high frequency, at a high speed, the characteristics of high power gain and low-noise factor, thereby be widely used in military affairs, space and civilian communication field.As millimetre-wave radar, electronic warfare, intelligent equipment, satellite communication and radiation astronomy etc.
The GaAs based hemts is mainly used in below the Ka wave band, and the InP based hemts still has high-gain and low-noise performance at higher W wave band, but the weak point of InP based hemts is: the one, and the source drain breakdown voltage is low, and power output is little, has restricted its application on the microwave power amplifier circuit; The 2nd, the InP substrate is frangible, and wafer size is little, and price is high, the processing cost height.
GaAs base strain high electron mobility transistor (MHEMT) structure, the i.e. epitaxial structure of extension InP based hemts on the GaAs substrate.Like this, both can utilize the preparation technology of GaAs substrate maturation, reduce preparation cost; Also can obtain simultaneously high frequency, the high speed performance close with the InP based hemts.
As shown in Figure 1, Fig. 1 is the schematic diagram of conventional MHEMT material in the prior art.Conventional MHEMT material comprises GaAs substrate, strained buffer layer In xAl 1-xAs (x is from 0 gradual change to 0.52), In 0.52Al 0.48As, In 0.53Ga 0.47As channel layer, In 0.52Al 0.48As spatial separation layer, delta doped layer, In 0.52Al 0.48As barrier layer and N +-In 0.53Ga 0.47As block a shot the layer.
But owing to adopt conventional InP based hemts epitaxial structure, the source drain breakdown voltage of device is on the low side.In present bibliographical information, the typical source of MHEMT drain breakdown voltage is 5 to 7 volts, and this low breakdown voltage causes the MHEMT power output little, has restricted it and has been used for power amplification circuit.For improving the power-performance of MHEMT device, further improve the key technology that the source drain breakdown voltage becomes needs solution.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of high speed gallium arsenide based channel MHEMT material, combines In 0.53Ga 0.47InP has the characteristic of high threshold energy and high saturation rate under the low field high electron mobility of As and the High-Field, to solve the low shortcoming of conventional MHEMT device source drain breakdown voltage, reach and both improve the source drain breakdown voltage, guarantee to have the purpose of superior millimeter-wave frequency device property again.
(2) technical scheme
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of high speed gallium arsenide based channel strain high electron mobility transistor material, this strain high electron mobility transistor MHEMT material is by epitaxially grown successively lattice strain layer In on the GaAs substrate xA L-xAs, raceway groove lower barrierlayer In 0.52Al 0.48As, channel layer InP, channel layer In 0.53Ga 0.47As, spatial separation layer In 0.52Al 0.48As, plane doping layer, barrier layer In 0.52Al 0.48As and highly doped block layer In 0.53Ga 0.47As constitutes.
Described lattice strain layer In xAl 1-xAs adopts the low-temperature epitaxy growth method to grow on the GaAs substrate, thickness be 10000 to
Figure C20071006337500071
In component x is used to absorb between GaAs substrate and the follow-up epitaxial loayer because the stress that lattice mismatch produces avoids producing the lattice relaxation from 0 gradual change to 0.52.
Described raceway groove lower barrierlayer In 0.52Al 0.48As adopts molecular beam epitaxy technique low temperature content gradually variational method at lattice strain layer In xAl 1-xThe last growth of As, thickness be 500 to Be used to the raceway groove growth that a smooth interface is provided, and utilize InP/In 0.52Al 0.48The As heterojunction is strapped in two-dimensional electron gas 2DEG in the raceway groove.
Described channel layer InP adopts molecular beam epitaxial method at raceway groove lower barrierlayer In 0.52Al 0.48The last growth of As, thickness be 100 to
Figure C20071006337500073
Be used to improve drain-source breakdown voltage; The InP layer thickness that wherein mixes be 50 to
Figure C20071006337500074
Body doping Si dosage is 2 * 10 18Cm -3, the InP layer thickness that undopes be 50 to
Figure C20071006337500075
Described channel layer In 0.53Ga 0.47As adopts molecular beam epitaxial method to grow on channel layer InP, thickness be 30 to
Figure C20071006337500076
Be used for hanging down and provide conducting channel for two-dimensional electron gas after the match.
Described channel layer InP and channel layer In 0.53Ga 0.47As constitutes the compound raceway groove of MHEMT.
Described spatial separation layer In 0.52Al 0.48As adopts molecular beam epitaxial method at channel layer In 0.53Ga 0.47The last growth of As, thickness be 30 to
Figure C20071006337500077
Be used for donor impurity spur and 2DEG spatial separation are reduced the ionization scattering process, guarantee the high electron mobility of 2DEG in the raceway groove.
Described plane doping layer adopts molecular beam epitaxial method at spatial separation layer In 0.52Al 0.48The last growth of As, thickness be 5 to
Figure C20071006337500078
Be used to provide free electron; The dosage of doping Si is 2.5 * 10 12Cm -2To 5 * 10 12Cm -2
Described barrier layer In 0.52Al 0.48As adopts molecular beam epitaxial method to grow on the plane doping layer, thickness be 150 to
Figure C20071006337500081
Be used for forming Schottky contacts with the grid metal, the free electron that the plane doping layer is produced shifts in raceway groove.
Described highly doped block layer In 0.53Ga 0.47As adopts molecular beam epitaxial method at barrier layer In 0.52Al 0.48The last growth of As, thickness be 100 to
Figure C20071006337500082
Be used to the device preparation that good Ohmic contact is provided; The dosage of body doping Si is 5 * 10 18Cm -3To 2 * 10 19Cm -3
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilizes the present invention,,, reached and both improved the source drain breakdown voltage, also guarantee to have the purpose of superior millimeter-wave frequency device property so solved the low shortcoming of conventional MHEMT device source drain breakdown voltage owing to adopted InP and the compound channel structure of InGaAs.
2, this high speed gallium arsenide based channel MHEMT material provided by the invention, the raceway groove of MHEMT is by In 0.53Ga 0.47As and InP constitute, In 0.53Ga 0.47The conduction band difference Δ E of As and InP C(In 0.53Ga 0.47As-InP) be 0.2eV.Hang down after the match, 2DEG mainly concentrates on In 0.53Ga 0.47In the As raceway groove; Under High-Field, 2DEG mainly concentrates in the InP raceway groove.This compound channel structure combines In 0.53Ga 0.47InP has the characteristic of high threshold energy and high saturation rate under the low field high electron mobility of As and the High-Field, has both improved the source drain breakdown voltage, has also guaranteed superior millimeter-wave frequency characteristic.Utilize In 0.53Ga 0.47InP has the characteristic of high threshold energy and high saturation rate under low high electron mobility of As and the High-Field, has both improved the source drain breakdown voltage, has also guaranteed superior millimeter-wave frequency characteristic.
3, this high speed gallium arsenide based channel MHEMT material provided by the invention is considered the actual requirement of epitaxial growth and device performance two aspects.Satisfying under the attainable prerequisite of epitaxial growth, compound channel structure has been proposed, this structure helps improving the source drain breakdown voltage of MHEMT device, improves the power-performance of MHEMT device.
4, this high speed gallium arsenide based channel MHEMT material provided by the invention, highly doped block layer In 0.53Ga 0.47As and grid Metal Contact provide good Ohmic contact for the device preparation.
Description of drawings
Fig. 1 is the schematic diagram of conventional MHEMT material in the prior art;
Fig. 2 is the schematic diagram of high speed gallium arsenide based channel MHEMT material provided by the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 2, Fig. 2 is the schematic diagram of high speed gallium arsenide based channel MHEMT material provided by the invention, and this MHEMT material is by epitaxially grown successively lattice strain layer In on the GaAs substrate xAl 1-xAs, raceway groove lower barrierlayer In 0.52Al 0.48As, channel layer doping InP, channel layer undope InP, channel layer In 0.53Ga 0.47As, spatial separation layer In 0.52Al 0.48As, plane doping layer, barrier layer In 0.52Al 0.48As and highly doped block layer In 0.53Ga 0.47As constitutes.
Wherein, lattice strain layer In xAl 1-xAs adopts the low-temperature epitaxy growth method to grow on the GaAs substrate, keep during growth low temperature, growth thickness be 10000 to
Figure C20071006337500091
Preferred thickness is
Figure C20071006337500092
In component x is used to absorb between GaAs substrate and the follow-up epitaxial loayer because the stress that lattice mismatch produces avoids producing the lattice relaxation from 0 gradual change to 0.52.
Raceway groove lower barrierlayer In 0.52Al 0.48As adopts molecular beam epitaxial method at lattice strain layer In xAl 1-xThe last growth of As, thickness be 500 to
Figure C20071006337500093
Preferred thickness is
Figure C20071006337500094
Be used to the raceway groove growth that a smooth interface is provided, and utilize InP/In 0.52Al 0.48The As heterojunction is strapped in two-dimensional electron gas (2DEG) in the raceway groove.
Channel layer InP adopts molecular beam epitaxial method at raceway groove lower barrierlayer In 0.52Al 0.48The last growth of As, thickness be 100 to (wherein mix InP layer 50 to Body doping Si dosage is 2 * 10 18Cm -3, undope InP layer 50 to ) preferred thickness of the InP layer that mixes and undope is respectively
Figure C20071006337500104
With
Figure C20071006337500105
The ionization threshold energy of InP is 1.69eV, compares In 0.53Ga 0.47Ionization threshold energy (0.92eV) height of As has high saturation rate under High-Field, the proof voltage breakdown capability is stronger, is used to improve drain-source breakdown voltage.
Channel layer In 0.53Ga 0.47As adopts molecular beam epitaxial method to grow on channel layer InP, thickness be 30 to Preferred thickness is
Figure C20071006337500107
Low higher electron mobility is arranged after the match, be used to two-dimensional electron gas that conducting channel is provided.
Channel layer InP and channel layer In 0.53Ga 0.47As constitutes the raceway groove of MHEMT.In 0.53Ga 0.47The conduction band difference Δ E of As and InP C(In 0.53Ga 0.47As-InP) be 0.2eV, hang down after the match that 2DEG mainly concentrates on In 0.53Ga 0.47In the As raceway groove, under High-Field, 2DEG mainly concentrates in the InP raceway groove.This compound channel structure combines In 0.53Ga 0.47InP has the characteristic of high threshold energy and high saturation rate under the low field high electron mobility of As and the High-Field, has both improved the source drain breakdown voltage, has also guaranteed superior millimeter-wave frequency characteristic.Utilize In 0.53Ga 0.47InP has the characteristic of high threshold energy and high saturation rate under low high electron mobility of As and the High-Field, has both improved the source drain breakdown voltage, has also guaranteed superior millimeter-wave frequency characteristic.
In 0.53Ga 0.47The concrete parameter of As and InP is as shown in table 1:
The ionization threshold energy of InP 1.69eV
In 0.53Ga 0.47The ionization threshold energy of As 0.92eV
Conduction band difference DELTA E C(In 0.53Ga 0.47As-InP) 0.2eV
Table 1
Spatial separation layer In 0.52Al 0.48As adopts molecular beam epitaxial method at channel layer In 0.53Ga 0.47The last growth of As, thickness be 30 to
Figure C20071006337500111
Preferred thickness is
Figure C20071006337500112
Be used for donor impurity spur and 2DEG spatial separation are reduced the ionization scattering process, guarantee the high electron mobility of 2DEG in the raceway groove.
The plane doping layer adopts molecular beam epitaxial method at spatial separation layer In 0.52Al 0.48The last growth of As, thickness be 5 to
Figure C20071006337500113
Be used to provide free electron; The dosage of doping Si is 2.5 * 10 12Cm -2To 5 * 10 12Cm -2, preferred dose is 3 * 10 12Cm -2Herein, the implication of plane doping layer is meant in one plane and mixes, so its thickness can be ignored; Plane doping is relative with the body doping, and body mixes and is meant doping in three-dimensional, and general thickness is thicker, chooses plane doping herein.
Barrier layer In 0.52Al 0.48As adopts molecular beam epitaxial method to grow on the plane doping layer, thickness be 150 to
Figure C20071006337500114
Preferred thickness is
Figure C20071006337500115
Be used for forming Schottky contacts with the grid metal, the free electron that the plane doping layer is produced shifts in raceway groove.
Highly doped block layer In 0.53Ga 0.47As adopts molecular beam epitaxial method at barrier layer In 0.52Al 0.48The last growth of As, thickness be 100 to
Figure C20071006337500116
Preferred thickness is The dosage of body doping Si is 5 * 10 18Cm -3To 2 * 10 19Cm -3, preferred dose is 1 * 10 19Cm -3Highly doped block layer In 0.53Ga 0.47As is generally N +-In 0.53Ga 0.47As, N +-In 0.53Ga 0.47As and grid Metal Contact provide good Ohmic contact for the device preparation.
The concrete parameter of high speed gallium arsenide based channel MHEMT material provided by the invention is as shown in table 2:
Figure C20071006337500121
Table 2
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1, a kind of high speed gallium arsenide based channel strain high electron mobility transistor material is characterized in that, this strain high electron mobility transistor MHEMT material is by epitaxially grown successively lattice strain layer In on the GaAs substrate xAl 1-xAs, raceway groove lower barrierlayer In 0.52Al 0.48As, channel layer InP, channel layer In 0.53Ga 0.47As, spatial separation layer In 0.52Al 0.48As, plane doping layer, barrier layer In 0.52Al 0.48As and highly doped block layer In 0.53Ga 0.47As constitutes.
2, high speed gallium arsenide based channel strain high electron mobility transistor material according to claim 1 is characterized in that, described lattice strain layer In xAl 1-xAs adopts the low-temperature epitaxy growth method to grow on the GaAs substrate, thickness be 10000 to
Figure C2007100633750002C1
In component x is used to absorb between GaAs substrate and the follow-up epitaxial loayer because the stress that lattice mismatch produces avoids producing the lattice relaxation from 0 gradual change to 0.52.
3, high speed gallium arsenide based channel strain high electron mobility transistor material according to claim 1 is characterized in that, described raceway groove lower barrierlayer In 0.52Al 0.48As adopts molecular beam epitaxy technique low temperature content gradually variational method at lattice strain layer In xAl 1-xThe last growth of As, thickness be 500 to
Figure C2007100633750002C2
Be used to the raceway groove growth that a smooth interface is provided, and utilize InP/In 0.52Al 0.48The As heterojunction is strapped in two-dimensional electron gas 2DEG in the raceway groove.
4, high speed gallium arsenide based channel strain high electron mobility transistor material according to claim 1 is characterized in that, described channel layer InP adopts molecular beam epitaxial method at raceway groove lower barrierlayer In 0.52Al 0.48The last growth of As, thickness be 100 to Be used to improve drain-source breakdown voltage; The InP layer thickness that wherein mixes be 50 to
Figure C2007100633750002C4
Body doping Si dosage is 2 * 10 18Cm -3, the InP layer thickness that undopes be 50 to
Figure C2007100633750002C5
5, high speed gallium arsenide based channel strain high electron mobility transistor material according to claim 1 is characterized in that, described channel layer In 0.53Ga 0.47As adopts molecular beam epitaxial method to grow on channel layer InP, thickness be 30 to
Figure C2007100633750003C1
Be used for hanging down and provide conducting channel for two-dimensional electron gas after the match.
6, high speed gallium arsenide based channel strain high electron mobility transistor material according to claim 1 is characterized in that, described channel layer InP and channel layer In 0.53Ga 0.47As constitutes the compound raceway groove of MHEMT.
7, high speed gallium arsenide based channel strain high electron mobility transistor material according to claim 1 is characterized in that, described spatial separation layer In 0.52Al 0.48As adopts molecular beam epitaxial method at channel layer In 0.53Ga 0.47The last growth of As, thickness be 30 to
Figure C2007100633750003C2
Be used for donor impurity spur and 2DEG spatial separation are reduced the ionization scattering process, guarantee the high electron mobility of 2DEG in the raceway groove.
8, high speed gallium arsenide based channel strain high electron mobility transistor material according to claim 1 is characterized in that, described plane doping layer adopts molecular beam epitaxial method at spatial separation layer In 0.52Al 0.48The last growth of As, thickness be 5 to
Figure C2007100633750003C3
Be used to provide free electron; The dosage of doping Si is 2.5 * 10 12Cm -2To 5 * 10 12Cm -2
9, high speed gallium arsenide based channel strain high electron mobility transistor material according to claim 1 is characterized in that, described barrier layer In 0.52Al 0.48As adopts molecular beam epitaxial method to grow on the plane doping layer, thickness be 150 to
Figure C2007100633750003C4
Be used for forming Schottky contacts with the grid metal, the free electron that the plane doping layer is produced shifts in raceway groove.
10, high speed gallium arsenide based channel strain high electron mobility transistor material according to claim 1 is characterized in that, described highly doped block layer In 0.53Ga 0.47As adopts molecular beam epitaxial method at barrier layer In 0.52Al 0.48The last growth of As, thickness be 100 to
Figure C2007100633750004C1
Be used to the device preparation that good Ohmic contact is provided; The dosage of body doping Si is 5 * 10 18Cm -3To 2 * 10 19Cm -3
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