CN100568423C - high-frequency dielectric capacitor and preparation method thereof - Google Patents
high-frequency dielectric capacitor and preparation method thereof Download PDFInfo
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- CN100568423C CN100568423C CNB2004100270702A CN200410027070A CN100568423C CN 100568423 C CN100568423 C CN 100568423C CN B2004100270702 A CNB2004100270702 A CN B2004100270702A CN 200410027070 A CN200410027070 A CN 200410027070A CN 100568423 C CN100568423 C CN 100568423C
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Abstract
The present invention relates to a kind of high-frequency dielectric capacitor and preparation method thereof, this high-frequency dielectric capacitor comprises high-frequency dielectric layer and electrode, this capacitor wherein only has a dielectric layer, and the isotropic body that this dielectric layer is a multilayer dielectric film successively to be overrided to form, the dielectric constant of dielectric layer is between 8～130; Electrode is the conducting film of metallized individual layer conducting film or MULTILAYER COMPOSITE, and the individual layer conducting film is one of in Ag, Au, the Ag-Pd film, and the conducting film of MULTILAYER COMPOSITE is one of in W-Ti/Au, W-Ti/Ag, W-Ti/Ni/Au-Sn, the W-Ti/Ni/Ag-Sn composite membrane.The invention provides a kind of capacity hit rate that can improve small-capacity product synthetically, preferably, make the size of small size capacitor accurately cooperate, make microwave porcelain and electrode material to mate, reduce more the high-frequency dielectric capacitor of random distribution electric capacity, inductance and equivalent resistance beyond the design load better with design capacity value.
Description
[technical field]
The present invention relates to a kind of capacitor, more particularly, the present invention relates to high frequency capacitor of a kind of single layer structure and preparation method thereof.
[background technology]
Along with the trend of microelectric technique and digital technology microminiaturization, constantly development of surface mounting technology (SMT), raising, wherein, high-frequency dielectric ceramic capacitor especially chip individual layer microwave-medium ceramics capacitor is being showed bright development prospect.The profile of chip individual layer microwave-medium ceramics capacitor is generally rectangle or square, and size is less, and capacitance is also very little, and capacitance range is generally between 0.01 to 50PF.Chip individual layer microwave-medium ceramics capacitor adopts microwave ceramics to make medium, and electrode adopts precious metal material as metal platinum, palladium, gold, silver.Because chip individual layer microwave-medium ceramics capacitor can use under the frequency range of 1MHZ to 50GHz, simultaneously also because its small size, the characteristics of chip type, it is mainly used in military-civil communication product, specifically comprise: wireless telecommunications, monolithic integrated microwave circuit, gallium arsenide integrated circuit, microwave components, radio-frequency (RF) digital product, direct current module, bypass, field such as tuning.
In electronic circuit, under very high frequency, the performance parameter of capacitor and low frequency situation are diverse, and the performance of capacitor can deviate from the electrical property under the low frequency.Under the low frequency condition, the capacitance of capacitor has been the effect of dominant parameters, and, under high frequency condition, the equivalent series resistance of capacitor and equivalent series inductance become and obviously increase.Along with improving constantly of frequency, capacitive reactance capacitor constantly reduces, the induction reactance of capacitor constantly improves, arrived resonance point, induction reactance begins to surpass capacitive reactance and begins to play leading role, and the capacitor of this moment has not been capacitor truly, and has been an inductor, simultaneously, equivalent series resistance can consume the part storage with the form that heat energy distributes.Therefore, the design of capacitor must be taken all factors into consideration the relation of capacitance and equivalent series resistance and equivalent series inductance, in general, capacitance is big more, can be cost to sacrifice equivalent series resistance and equivalent series inductance, that is to say, capacitance is big more, equivalent series resistance and equivalent series inductance can be big more, and therefore, equivalent series resistance and equivalent series inductance are inevitable.Chip individual layer microwave-medium ceramics capacitor can be used for the reason of nearly 50GHz, be because the obtainable capacitance of chip individual layer microwave-medium ceramics capacitor is minimum, equivalent series resistance and equivalent series inductance have been reduced simultaneously effectively, therefore improved the resonance point of capacitor widely, for capacitor can have high Q value under microwave condition, having adopted the microwave material of a series of high temperature sinterings, because capacitor has high Q value under microwave condition, is the basic demand of high frequency capacitor.
For above-mentioned similar problem, it is that 91103379.3 Chinese patent file discloses a kind of nothing lead-in wire Leaded Ceramic Disc Capacitor topochemistry nickel plating or copper method that application number is arranged, this method is at the dielectric ceramic capacitor, particularly high frequency do not have following problem that porcelain Jie method for surface metallation of lead-in wire Leaded Ceramic Disc Capacitor exists as: be with a large amount of noble metal silver, and relate to the preparation of silver slurry, smear or print, complex processes such as high temperature sintering, cycle is long, the energy consumption height, economic benefit is low etc., proposes to improve: at dielectric ceramic, particularly not having lead-in wire Leaded Ceramic Disc Capacitor local surfaces smears or prints the organic carrier slurry that one deck has catalysis characteristics; This slurry drying, behind the high-temperature activation, but direct chemical nickel plating or copper facing can form that one deck adhesive force height, dielectric property are good, the metal level of easy welding in the Leaded Ceramic Disc Capacitor local surfaces.It is said that this topochemistry nickel plating or process for copper can raise labour productivity 3 times, cost of material only is original 15%, and can save a large amount of noble metal silver.The catalysis slurry of said method is formed two kinds in the catalysis slurry that is divided into the catalysis slurry smeared and printing: the catalysis slurry of smearing is made up of 0.05-10% (weight) PdCl
2, 0.5-5% (weight) HCl (1: 1), 50%～95% (weight) methyl Cellosolve, 1～20% (weight) cellulose acetate, 1～20% (weight) polyethylene glycol is formed; The weight percent of the catalysis slurry of printing consists of 0.05～10% (weight) PdClz,～5% 0.1 (weight) HCl (1: 1), 20～70% (weight) methyl Cellosolve, 10～20% (weight) cyclohexanone, 5～20% (weight) terpinol, 1～30% (weight) cellulose acetate, 1～20% polyethylene glycol, 1～15% (weight) carbon dust.In the technique scheme, no pin configuration can reduce this external distributed capacitance and inductance of electric capacity to a certain extent, and distinctive catalysis slurry can improve the coupling of microwave porcelain and electrode material to improve metal electrode adhesive force and dielectric property, also can reduce equivalent resistance, but how to improve the high frequency capacitor particularly quality and the production efficiency of microwave capacitors device on the whole, still have the improved aspect of a lot of needs.
In a word, the technical difficult points of high frequency low value capacitor making also concentrates on except obtaining this point of ultra-thin high-quality ceramics: 1, the capacity hit rate of small-capacity product; 2, the accurate cooperation of the size and capacity of small size capacitor; 3, the coupling of microwave porcelain and electrode material; 4, random distribution electric capacity, inductance and the equivalent resistance beyond the design load is as far as possible little.But at present, still the neither one technical scheme can be preferably, synthetically address the above problem.
[summary of the invention]
Above-mentioned shortcoming at prior art, the technical purpose that the present invention will reach is that a kind of high-frequency dielectric capacitor and preparation method thereof will be provided, this kind capacitor and preparation method thereof can improve comprehensively, preferably small-capacity product the capacity hit rate, make the size of small size capacitor accurately cooperate, make microwave porcelain and electrode material to mate, reduce more random distribution electric capacity, inductance and equivalent resistance beyond the design load better with design capacity value.
For this reason, technical scheme of the present invention is a kind of high-frequency dielectric capacitor, this high-frequency dielectric capacitor comprises high-frequency dielectric layer and electrode, this capacitor wherein only has a described dielectric layer, and the isotropic body that this dielectric layer is a multilayer dielectric film successively to be overrided to form, the dielectric constant of described dielectric layer is between 8～130; Described electrode is the conducting film of metallized individual layer conducting film or MULTILAYER COMPOSITE, described individual layer conducting film is one of in Ag, Au, the Ag-Pd film, and the conducting film of described MULTILAYER COMPOSITE is one of in W-Ti/Au, W-Ti/Ag, W-Ti/Ni/Au-Sn, the W-Ti/Ni/Ag-Sn composite membrane.Be used for the especially capacity hit rate of the low value capacitor of microwave end of high band in order to improve, the size of small size capacitor and the quality of fit of design capacity are improved, the present invention rationally adopts the microwave-medium of dielectric constant between 8～130 according to the design capacitance value, rather than blindness adopts the high medium of dielectric constant, because, it is littler suitably to have a dielectric loss than the dielectric material of low-k, temperature varying coefficient is littler, advantages such as equivalent resistance is lower under high frequency and the microwave applications occasion, and suitably have the little capacitance that the dielectric material of being convenient to adopt suitable volume is realized mark PF magnitude, convenient design load of hitting little capacitance with the method for regulating thickness and volume than the dielectric material of low-k; And, the dielectric layer isotropic body of taking multilayer dielectric film successively to laminate to make, the inside dimension and the external dimensions of dielectric layer both be convenient to accurately and economically realize, also can be in the lamination process successively of deielectric-coating, the internal flaw of dielectric layer material is significantly reduced, improve the inner uniformity of medium, thereby can further improve the quality of fit of the hit rate and the size of design capacity; And adopt single above-mentioned dielectric layer, helping outside dielectric layer the two sides forms high-quality metallic electrode and forms the MULTILAYER COMPOSITE electrode film as adopting energy particle stream method, thereby greatly improve dielectric layer and interelectrode interface performance, cooperate W-Ti class or other improved multi-element metal electrodes, just can make microwave porcelain and electrode material realize better coupling, thereby reduce random distribution electric capacity, inductance and equivalent resistance beyond the design load.
In conjunction with existing casting machine may with the character of dielectric paste, for implementing above-mentioned principal advantages of the present invention, the present invention takes following concrete corrective measure: the thickness of described dielectric layer is 0.08mm～0.3mm; Described high-frequency dielectric porcelain is the microwave-medium porcelain.Described thickness of electrode is 0.06 μ m-4 μ m.An a pair of or electrode of a described capacitor all or part of exposed and constitute no pin electrode, arbitrarily the random distribution electric capacity that brings of trend and inductance can directly be welded in no pin electrode on the wiring board in the reality the mistake large disturbance of low capacity design load in the hope of reducing electrode pin.
The above-mentioned single-layer capacitor that makes according to the present invention, size is little, function admirable, frequency of utilization can reach 50GHz from 1MHZ.
With above-mentioned relevant another technical scheme of the present invention is a kind of preparation method who produces above-mentioned high-frequency dielectric capacitor, this preparation method comprise with the high-frequency dielectric porcelain prepare burden, ball milling and curtain coating operating procedure, in addition, this preparation method also comprises following operating procedure:
A) in described curtain coating operation, described high-frequency dielectric porcelain is made into the casting films that thickness equates or do not wait, and the thickness range of described casting films is 0.01mm～0.05mm;
B) according to design thickness, thickness equated or the casting films that do not wait make up, stacked, then stacked casting films is made the green sheet of certain density and respective thickness by static pressure such as grade or extrusion operation;
C) green sheet is carried out sintering and make dielectric layer, on the dielectric layer two sides behind the sintering, form metallic electrode again; Or after printing electrode on the green sheet two sides, carry out common burning and form dielectric layer and metallic electrode;
D) cut by the dielectric layer of dimensional requirement after, promptly get described high-frequency dielectric capacitor after removing the dielectric layer surface residue with the ultrasonic waves for cleaning mode metallization.
At described step C) also comprise step e afterwards) promptly: capacitance between detecting electrode, and electrode is carried out photoetch according to detected value.
The existing casting machine of the above-mentioned steps utilization of the inventive method elder generation curtain coating goes out the medium diaphragm as assembly, and then the medium diaphragm laminated shaping, this makes the operation adjustability and the accuracy of preparation dielectric layer better, and make eventually the immanent structure of dielectric layer existing not laminate the dielectric layer that shaping obtains more even, fine and close, on this basis, further form the metallic electrode film on the dielectric layer two sides, and come the cutting and separating monolithic capacitor with the high accuracy cutting machine, also can on detection interelectrode capacitance basis, carry out the fine setting or the division of capacity with photoetch, thereby can significantly improve the hit rate of design capacity value metallic electrode.
For implementing above-mentioned principal advantages of the present invention, the present invention takes following concrete corrective measure: at described step C) in, forming metallic electrode on the dielectric layer two sides behind the sintering is to adopt one of following method or wherein several combinations: sintering curing, vacuum sputtering, evaporation, chemical plating, plating again after printing electrode.Described metallic electrode is that single or multiple lift is compound, wherein, described single-layer metal polarizing electrode is one of in Ag, Au, the Ag-Pd film, and the metallic electrode of described MULTILAYER COMPOSITE is one of in W-Ti/Au, W-Ti/Ag, W-Ti/Ni/Au-Sn, the W-Ti/Ni/Ag-Sn composite membrane.At described step C) in, when carrying out common burning after on the green sheet two sides, printing electrode, burn the highest sintering fusing point that sintering temperature is lower than electrode material altogether.The thickness of described dielectric layer is 0.08mm～0.3mm; Described high-frequency dielectric porcelain is the microwave-medium porcelain.
In a word, above-mentioned improvement of the present invention is easy to implement, effectively, and can produce effective frequency range is the microwave capacitor of 1MHZ to 50GHz.
Below, with accompanying drawing technical solution of the present invention is described further in conjunction with specific embodiments.
[description of drawings]
Fig. 1 is the structural representation of high-frequency dielectric capacitor embodiment of the present invention.
Fig. 2 is the process flow diagram of high-frequency dielectric method of preparing capacitor embodiment 1 of the present invention.
Fig. 3 is the process flow diagram of high-frequency dielectric method of preparing capacitor embodiment 2 of the present invention.
[embodiment]
Capacitor embodiment:
As shown in Figure 1: be a kind of high-frequency dielectric capacitor, the length of this high-frequency dielectric capacitor is L, and wide is W, and thickness approximates thickness of dielectric layers T.This high-frequency dielectric capacitor comprises high-frequency dielectric layer 1 and electrode 2, this capacitor wherein only has a described dielectric layer 1, and this dielectric layer 1 is that multilayer dielectric film successively is overrided to form, matter layer thickness T is the isotropic body of 0.08mm～0.3mm, and the dielectric constant of described dielectric layer 1 is between 8～130; Described electrode 2 is the conducting film of 1 μ m for metallized MULTILAYER COMPOSITE, thickness, and the conducting film of described MULTILAYER COMPOSITE is the W-Ti/Ag composite membrane.The part of the pair of electrodes 2 of capacitor is exposed and the no pin electrode of formation.
Preparation method embodiment 1:
As shown in Figure 2: a kind of preparation method who produces above-mentioned high-frequency dielectric capacitor, this preparation method comprise with the high-frequency dielectric porcelain prepare burden, the ball milling operating procedure, enter the curtain coating operating procedure then, in the curtain coating operation, described high-frequency dielectric porcelain is made into the casting films that thickness equates or do not wait, and the thickness range of described casting films is 0.02mm～0.05mm;
According to design thickness, thickness equated or the casting films that do not wait make up, stacked, then stacked casting films is made the green sheet of certain density and respective thickness by the laminating operation of static pressure such as grade;
Again to green sheet cut into slices, binder removal, sintering make dielectric layer,
Form metallic electrode again on the dielectric layer two sides behind the sintering, these methods comprise: sintering curing, vacuum sputtering, evaporation, chemical plating, plating again after printing electrode.
Capacitance between detecting electrode, and electrode is carried out photoetch according to detected value.
Clean before dielectric layer after the metallization carried out and obtain the capacitor first product, by dimensional requirement with high accuracy cutting machine cutting and separating it, remove the dielectric layer surface residue with the back cleaning of ultrasonic wave mode again, check, pack and promptly get described high-frequency dielectric capacitor.
The dielectric constant values of the thickness T of the capacitance of its final products, the structure of metallic electrode, thickness of electrode, dielectric layer and other overall dimension, microwave-medium is all referring to sequence number in the table one 5～12.The knot curing that reburns after wherein sequence number 5 products adopt and print electrode makes, wherein the product of sequence number 6,7,12 adopts the vacuum sputtering method to make, wherein the product of sequence number 8,9 adopts evaporation coating method to make, wherein the product of sequence number 10 adopts chemical plating method to make, and wherein the product of sequence number 11 adopts electro-plating method to make.
Preparation method embodiment 2:
As shown in Figure 3: a kind of preparation method who produces above-mentioned high-frequency dielectric capacitor, this preparation method comprise with the high-frequency dielectric porcelain prepare burden, the ball milling operating procedure, enter the curtain coating operating procedure then, in the curtain coating operation, described high-frequency dielectric porcelain is made into the casting films that thickness equates or do not wait, and the thickness range of described casting films is 0.03mm～0.04mm;
According to design thickness, thickness equated or the casting films that do not wait make up, stacked, then stacked casting films is made the green sheet of certain density and respective thickness by the squash type laminating operation;
After printing electrode on the green sheet two sides porcelain body and electrode are carried out common burning, sintering temperature is lower than the highest sintering fusing point of electrode material in burning altogether, forms dielectric layer and metallic electrode;
By the dielectric layer of dimensional requirement after to metallization with high accuracy cutting machine cutting and separating, remove the dielectric layer surface residue with the ultrasonic waves for cleaning mode after, check, pack and promptly get described high-frequency dielectric capacitor.
The dielectric constant values of the thickness T of the capacitance of its final products, the structure of metallic electrode, thickness of electrode, dielectric layer and other overall dimension, microwave-medium is all referring to sequence number in the table one 1～4.
Table one
In the table one: the A electrode is: Ag,
The B electrode is: W-Ti/Au,
The C electrode is: W-Ti/Ni/Au-Sn,
The D electrode is: Ag-Pd.
Claims (8)
1, a kind of high-frequency dielectric capacitor, described high-frequency dielectric capacitor comprises high-frequency dielectric layer and electrode, only has a described dielectric layer in this capacitor, it is characterized in that: described dielectric layer is the isotropic body that multilayer dielectric film successively is overrided to form, and the dielectric constant of described dielectric layer is between 8～130; Described electrode is the conducting film of metallized individual layer conducting film or MULTILAYER COMPOSITE, described individual layer conducting film is one of in Ag, Au, the Ag-Pd film, and the conducting film of described MULTILAYER COMPOSITE is one of in W-Ti/Au, W-Ti/Ag, W-Ti/Ni/Au-Sn, the W-Ti/Ni/Ag-Sn composite membrane.
2, high-frequency dielectric capacitor as claimed in claim 1 is characterized in that: an a pair of or electrode of a described capacitor all or part of exposed and constitute no pin electrode.
3, high-frequency dielectric capacitor as claimed in claim 1 or 2 is characterized in that: the thickness of described dielectric layer is 0.08mm～0.3mm; The high-frequency dielectric porcelain that is adopted is the microwave-medium porcelain.
4, high-frequency dielectric capacitor as claimed in claim 3 is characterized in that: described thickness of electrode is 0.06 μ m-4 μ m.
5, a kind of preparation method, this preparation method as the described high-frequency dielectric capacitor of one of claim 1～4 comprise with the high-frequency dielectric porcelain prepare burden, ball milling and curtain coating operating procedure, it is characterized in that this preparation method also comprises following operating procedure:
A) in described curtain coating operation, described high-frequency dielectric porcelain is made into the casting films that thickness equates or do not wait, and the thickness range of described casting films is 0.01mm～0.05mm;
B) according to design thickness, thickness equated or the casting films that do not wait make up, stacked, then stacked casting films is made the green sheet of certain density and respective thickness by static pressure such as grade or extrusion operation;
C) green sheet is carried out sintering and make dielectric layer, on the dielectric layer two sides behind the sintering, form metallic electrode again; Or after printing electrode on the green sheet two sides, carry out common burning and form dielectric layer and metallic electrode;
D) cut by the dielectric layer of dimensional requirement after, promptly get described high-frequency dielectric capacitor after removing the dielectric layer surface residue with the ultrasonic waves for cleaning mode metallization.
6, the preparation method of high-frequency dielectric capacitor as claimed in claim 5 is characterized in that: at described step C) also comprise step e afterwards) promptly: capacitance between detecting electrode, and electrode is carried out photoetch according to detected value.
7, the preparation method of high-frequency dielectric capacitor as claimed in claim 5, it is characterized in that: at described step C) in, forming metallic electrode on the dielectric layer two sides behind the sintering is to adopt one of following method or wherein several combinations: sintering curing, vacuum sputtering, evaporation, chemical plating, plating again after printing electrode.
8, the preparation method of high-frequency dielectric capacitor as claimed in claim 5 is characterized in that: at described step C) in, when carrying out common burning after on the green sheet two sides, printing electrode, burn the highest sintering fusing point that sintering temperature is lower than electrode material altogether.
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| CN100568423C true CN100568423C (en) | 2009-12-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101950771A (en) * | 2010-07-27 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing compound electrode |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107403692A (en) * | 2016-05-18 | 2017-11-28 | 中山因塞施特电子科技有限公司 | A kind of chip inductor and preparation method thereof |
| CN109637809B (en) * | 2018-12-21 | 2022-03-11 | 广州天极电子科技股份有限公司 | Ceramic energy storage capacitor and preparation method thereof |
| CN113629041A (en) * | 2020-05-09 | 2021-11-09 | 芯恩（青岛）集成电路有限公司 | MOS capacitor device and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950771A (en) * | 2010-07-27 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing compound electrode |
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