CN100563002C - The encapsulating structure of light-emitting diode chip for backlight unit and method thereof - Google Patents
The encapsulating structure of light-emitting diode chip for backlight unit and method thereof Download PDFInfo
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- CN100563002C CN100563002C CNB2006100798619A CN200610079861A CN100563002C CN 100563002 C CN100563002 C CN 100563002C CN B2006100798619 A CNB2006100798619 A CN B2006100798619A CN 200610079861 A CN200610079861 A CN 200610079861A CN 100563002 C CN100563002 C CN 100563002C
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- light
- emitting diode
- diode chip
- backlight unit
- unit
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 74
- 239000000084 colloidal system Substances 0.000 claims abstract description 41
- 238000004020 luminiscence type Methods 0.000 claims abstract description 36
- 238000012856 packing Methods 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000007731 hot pressing Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 238000007639 printing Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
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Abstract
A kind of encapsulating structure of light-emitting diode chip for backlight unit comprises base material unit, luminescence unit, colloid unit.The base material unit has material main body and is formed at the positive conductive traces and the negative pole conductive traces of material main body respectively, and positive conductive traces and negative pole conductive traces are arranged side by side and linear extension on material main body; Luminescence unit has a plurality of light-emitting diode chip for backlight unit that are arranged at material main body, wherein each light-emitting diode chip for backlight unit has positive terminal and negative pole end, and the positive and negative extreme of light-emitting diode chip for backlight unit is electrical connected with series connection or mode and this positive and negative electrode conductive traces in parallel respectively; The colloid unit, it is covering on base material unit and luminescence unit; When luminescence unit produced light by positive and negative conductive traces energising, light formed continuous light-emitting zone on the colloid unit by the guiding of colloid unit.Therefore, form continuous light beam when the present invention makes the encapsulating structure of light-emitting diode luminous, and shorten its process time.
Description
Technical field
The present invention relates to the encapsulating structure and the method thereof of light-emitting diode chip for backlight unit, relate in particular to and a kind of light-emitting diode chip for backlight unit is arranged on the material main body, and be electrical connected by conducting medium, utilize colloid to encapsulate this LED chip construction again in modes such as pressing molds.
Background technology
See also Fig. 1, it is the schematic diagram of the known package structure for LED made from routing (wire-bounding) technology.By among the figure as can be known, known package structure for LED comprises: board structure 1a, a plurality of light-emitting diode 2a on the board structure 1a, many lead 3a, and a plurality of fluorescent colloid 4a of being arranged at.
Wherein, each light-emitting diode 2a is arranged on the underlying structure 1a, and the positive and negative electrode of each light-emitting diode 2a zone 21a, 22a are electrically connected at corresponding positive and negative electrode zone 11a, the 12a of underlying structure 1a by two lead 3a.Moreover each fluorescent colloid 4a is covered on each light-emitting diode 2a and two the lead 3a, with protection light-emitting diode 2a.
Yet, because described light-emitting diode 2a encapsulation need cut into single, again with surface mounting technology (SMT) technology, light-emitting diode 2a is placed on the board structure 1a, therefore its process time can't effectively be shortened, moreover, have the blanking bar phenomenon when luminous between the described light-emitting diode 2a and exist, still produce not good effect for user's sight line.
Summary of the invention
Technical problem to be solved by this invention, be to provide a kind of encapsulating structure and method thereof of light-emitting diode chip for backlight unit, be to stick together or mode such as printing is arranged at light-emitting diode chip for backlight unit on the material main body, this material main body can be printed circuit board (PCB), soft base plate, aluminium base or ceramic substrate, and utilize lead routing (wire-bounding) or tin ball to cover crystalline substance modes such as (flip chip), this light-emitting diode chip for backlight unit and this material main body are electrical connected, and utilize pressing mold modes such as (die mold), the colloid that will be material with epoxy resin is covering on this material main body and this light-emitting diode chip for backlight unit, whereby, when this light emitting diode construction is luminous, form continuous light-emitting zone, do not take place and there is bright blanking bar situation, and effectively shorten its process time, moreover this light emitting diode construction can be the combination of the colloid of blue light-emitting diode collocation fluorescence kenel; Structural design of the present invention in addition also is applicable to various light sources, such as application such as backlight module, Decorating lamp strip, illuminator lamp or Scanner light sources, is all applied scope of the present invention and product.
In order to solve the problems of the technologies described above, according to a kind of scheme of the present invention, a kind of encapsulating structure of light-emitting diode chip for backlight unit is provided, it comprises: the base material unit, it has material main body and is formed at the positive conductive traces of this material main body (electron trace) and negative pole conductive traces respectively, this positive conductive traces and this negative pole conductive traces is arranged side by side and linear extension on this material main body; Luminescence unit, it has a plurality of light-emitting diode chip for backlight unit that are arranged on this material main body, wherein each light-emitting diode chip for backlight unit has positive terminal and negative pole end, and the positive and negative of described light-emitting diode chip for backlight unit extremely is electrical connected with series connection or mode and this positive and negative electrode conductive traces in parallel; And be the colloid unit of material with epoxy resin, it is covering on this base material unit and this luminescence unit; When the energising of this luminescence unit by this positive and negative conductive traces produced light, this light formed continuous light-emitting zone on this colloid unit by the guiding of this colloid unit.
According to the encapsulating structure of described light-emitting diode chip for backlight unit, this base material unit is printed circuit board (PCB) soft base plate, aluminium base or ceramic substrate.
According to the encapsulating structure of described light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit positive and negative extremely by corresponding lead and in the mode of routing is electrical connected with this positive and negative electrode conductive traces.
According to the encapsulating structure of described light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit positive and negative extremely by corresponding tin ball and to cover brilliant mode is electrical connected with this positive and negative electrode conductive traces.
According to the encapsulating structure of described light-emitting diode chip for backlight unit, this tin ball covers brilliant on this substrate with hot pressing mode.
According to the encapsulating structure of described light-emitting diode chip for backlight unit, the mode that described light-emitting diode chip for backlight unit is arranged with straight line is arranged on this base material unit.
According to the encapsulating structure of described light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit is arranged on this base material unit in the mode of many linear array.
According to the encapsulating structure of described light-emitting diode chip for backlight unit, each light-emitting diode chip for backlight unit is a blue light-emitting diode, and this colloid unit is a fluorescent colloid.
According to the encapsulating structure of described light-emitting diode chip for backlight unit, this colloid unit is epoxy resin (Epoxy).
The present invention also provides a kind of method for packing of light-emitting diode chip for backlight unit, comprise the following steps: to provide the base material unit, wherein this base material unit has material main body and is formed at positive conductive traces (electron trace and negative pole conductive traces, this positive conductive traces and this negative pole conductive traces is arranged side by side and linear extension on this material main body of this material main body respectively; Luminescence unit is set on this material main body, wherein this luminescence unit has a plurality of light-emitting diode chip for backlight unit that are arranged on this material main body, each light-emitting diode chip for backlight unit has positive terminal and negative pole end, and the positive and negative extreme of described light-emitting diode chip for backlight unit is electrical connected with series connection or mode and this positive and negative electrode conductive traces in parallel respectively; And covering the colloid unit on this base material unit and this luminescence unit, so that when the energising of this luminescence unit by this positive and negative conductive traces produces light, this light forms continuous light-emitting zone on this colloid unit by the guiding of this colloid unit.
From above-mentioned technical scheme as can be seen, this light-emitting diode chip for backlight unit is arranged on the material main body, and be electrical connected by the conducting medium connection, utilize colloid to encapsulate this LED chip construction again in modes such as pressing molds, form continuous light beam when making the encapsulating structure of this light-emitting diode luminous, and shorten its process time.
Reach technology, means and the beneficial effect that predetermined purpose is taked in order further to understand the present invention, see also following about detailed description of the present invention and accompanying drawing, believe purpose of the present invention, feature and characteristics, when being goed deep into thus and concrete understanding, yet accompanying drawing only provides reference and explanation usefulness, is not to be used for the present invention is limited.
Description of drawings
Figure 1A is the stereogram of known package structure for LED;
Figure 1B is the front view of known package structure for LED;
Fig. 1 C is the vertical view of known package structure for LED;
Fig. 2 A is the stereogram of package structure for LED of the present invention;
Fig. 2 B is the vertical view of package structure for LED of the present invention;
Fig. 2 C is the arrangement architecture vertical view of the package structure for LED of first embodiment of the invention;
Fig. 2 D is the permutation and combination of the package structure for LED of first embodiment of the invention;
Fig. 3 A is the stereogram of package structure for LED of the present invention;
Fig. 3 B is the vertical view of package structure for LED of the present invention;
Fig. 3 C is the vertical view of arrangement architecture of the package structure for LED of second embodiment of the invention;
Fig. 3 D is the permutation and combination of the package structure for LED of second embodiment of the invention;
Fig. 4 A is the stereogram of package structure for LED of the present invention;
Fig. 4 B is the vertical view of package structure for LED of the present invention;
Fig. 4 C is the vertical view of arrangement architecture of the package structure for LED of third embodiment of the invention;
Fig. 4 D is the permutation and combination of the package structure for LED of third embodiment of the invention;
Fig. 5 is the method step block diagram of encapsulating structure of the light-emitting diode chip for backlight unit of first embodiment of the invention;
Fig. 6 is the method step block diagram of encapsulating structure of the light-emitting diode chip for backlight unit of second embodiment of the invention; And
Fig. 7 is the method step block diagram of encapsulating structure of the light-emitting diode chip for backlight unit of third embodiment of the invention.
Wherein, description of reference numerals is as follows:
[known]
1a board structure 11a positive electrode zone
The 12a negative electrode area
2a light-emitting diode 21a positive electrode zone
The 22a negative electrode area
The 3a lead
The 4a fluorescent colloid
[the present invention]
1 base material unit, 10 material main body
11 positive conductive traces
12 negative pole conductive traces
2 luminescence units, 20 light-emitting diode chip for backlight unit
201 positive terminals
202 negative pole ends
3 colloid unit
Embodiment
See also Fig. 2, Figure 2 shows that the encapsulating structure schematic diagram of the light-emitting diode chip for backlight unit of first embodiment of the invention.By among the figure as can be known, the invention provides a kind of encapsulating structure of light-emitting diode chip for backlight unit, it comprises: base material unit 1, luminescence unit 2 and colloid unit 3; Wherein base material unit 1 has material main body 10 and is formed at positive conductive traces 11 and negative pole conductive traces 12 on the material main body 10 respectively, wherein, positive conductive traces 11 and negative pole conductive traces 12 can form by the method for etching, printing or any formation track.Luminescence unit 2 has a plurality of light-emitting diode chip for backlight unit 20, can utilize and stick together or mode such as hot pressing printing, be arranged on the material main body 10, each light-emitting diode chip for backlight unit 20 has positive terminal 201 and negative pole end 202, the positive terminal 201 of each light-emitting diode and negative pole end 202 are with parallel way, and by the lead routing accordingly with material main body 10 on positive conductive traces 11, negative pole conductive traces 12 is electrical connected, in addition, the positive terminal 201 of each light-emitting diode and negative pole end 202 also can parallel way and by the tin ball cover crystalline phase accordingly with material main body 10 on positive conductive traces 11, negative pole conductive traces 12 is electrical connected.In addition; colloid unit 3 is provided; it is the colloid that is covering on base material unit 1 and luminescence unit 2; whereby; when the energising of luminescence unit 2 by positive conductive traces 11, negative pole conductive traces 12 produces light; light forms continuous light-emitting zone on colloid unit 3 by the guiding of colloid unit 3, simultaneously, also be not easy to be destroyed in order to protection luminescence unit 2.
In addition, shown in Fig. 2 C and Fig. 2 D, the encapsulating structure of light-emitting diode chip for backlight unit of the present invention can many luminescence unit 2 form of arranging exist, base material unit 1 can cut into the light-emitting diode of several luminescence units 2, more described light-emitting diode is combined into according to demand the light-emitting diode group of difformity (as the panel shape).
See also Fig. 3, Figure 3 shows that the encapsulating structure schematic diagram of the light-emitting diode chip for backlight unit of second embodiment of the invention.By among the figure as can be known, maximum different being of this second embodiment and first embodiment: 20 of each light-emitting diode chip for backlight unit of luminescence unit 2, the placing direction of the positive terminal 201 of each adjacent light-emitting diode chip for backlight unit 20 is arranged mutually on the contrary, and each positive terminal 201, negative pole end 202 are electrical connected with series system and by lead routing and positive and negative electrode conductive traces, and its outward appearance is U type series connection form.
In addition, shown in Fig. 3 C and Fig. 3 D, the encapsulating structure of light-emitting diode chip for backlight unit of the present invention can many luminescence unit 2 form of arranging exist, base material unit 1 can cut into the light-emitting diode of several luminescence units 2, more described light-emitting diode is combined into according to demand the light-emitting diode group of difformity (as the panel shape).
See also Fig. 4, Figure 4 shows that the encapsulating structure schematic diagram of the light-emitting diode chip for backlight unit of third embodiment of the invention.By among the figure as can be known, the maximum difference of this 3rd embodiment and second embodiment is: 20 of each light-emitting diode chip for backlight unit of luminescence unit 2, the placing direction of the positive terminal 201 of each light-emitting diode chip for backlight unit 20 is consistent and arrange, and each positive terminal 201, negative pole end 202 are electrical connected with series system and by lead routing and positive and negative electrode conductive traces, and its outward appearance is S type series connection form.
In addition, shown in Fig. 4 C and 4D, the encapsulating structure of light-emitting diode chip for backlight unit of the present invention can many luminescence unit 2 form of arranging exist, base material unit 1 can cut into the light-emitting diode of several luminescence units 2, more described light-emitting diode is combined into according to demand the light-emitting diode group of difformity (as the panel shape).
See also Fig. 5, Figure 5 shows that the method step block diagram of encapsulating structure of the light-emitting diode chip for backlight unit of first embodiment of the invention.By learning on the figure, the invention provides a kind of method of encapsulating structure of light-emitting diode chip for backlight unit, it comprises: S201 at first, base material unit 1 is provided, and base material unit 1 has material main body 10, reaches the positive conductive traces 11 (electron trace) and negative pole conductive traces 12 that are formed at material main body respectively; S203 then is provided with luminescence unit 2 on material main body 10, and luminescence unit 2 has a plurality of light-emitting diode chip for backlight unit 20 that are arranged on the material main body 10, and each light-emitting diode chip for backlight unit 20 has positive terminal 201 and negative pole end 202; S205 then, wherein positive 201, the negative pole end 202 of each light-emitting diode chip for backlight unit 20 are electrical connected with parallel way and by corresponding lead routing (the tin ball covers crystalline substance) and positive conductive traces 11, negative pole conductive traces 12; S207 then, covering colloid unit 3 on base material unit 1 and luminescence unit 2, so that when luminescence unit 2 produced light by energising positive 11, negative pole conductive traces 12, light formed continuous light-emitting zone on colloid unit 3 by the guiding of colloid unit 3.
See also Fig. 6, Figure 6 shows that the method step block diagram of encapsulating structure of the light-emitting diode chip for backlight unit of second embodiment of the invention.By among the figure as can be known, the maximum difference of this second embodiment and first embodiment is: in S305, the ornaments direction of the positive terminal 201 of each light-emitting diode chip for backlight unit 20 is opposite with the positive terminal 201 of adjacent light-emitting diode chip for backlight unit 20, is electrical connected with series system and by lead routing and positive 11, negative pole conductive traces 12.
See also Fig. 7, Figure 7 shows that the method step block diagram of encapsulating structure of the light-emitting diode chip for backlight unit of third embodiment of the invention.By among the figure as can be known, the maximum difference of this 3rd embodiment and second embodiment is: in S405, the positive terminal 201 of each light-emitting diode chip for backlight unit 20 is arranged in the same direction, is electrical connected with series system and by lead routing and positive conductive traces 11, negative pole conductive traces 12.
In sum, the encapsulating structure of light-emitting diode chip for backlight unit of the present invention and method thereof, be by conventional die (die mold) or printing (printing) method, and routing (wire-bounding) or cover the technology of crystalline substance (flip chip), overcome the dark area problem between light-emitting diode, and the encapsulating structure of light-emitting diode is oversimplified, and shortened its process time.
Yet, the above, only for the best of the present invention the detailed description and the accompanying drawing of specific embodiment, but feature of the present invention is not limited thereto, be not in order to restriction the present invention, all scopes of the present invention should be as the criterion with the scope of described claim, all closing in the embodiment of the spirit variation similar of the scope of claim of the present invention with it, all should be contained in the category of the present invention, any those skilled in the art in the field of the invention, can think easily and variation or modify the scope all can be encompassed in described claim of the present invention.
Claims (20)
1, a kind of encapsulating structure of light-emitting diode chip for backlight unit is characterized in that, comprising:
The base material unit, positive conductive traces and negative pole conductive traces that it has material main body and is formed at this material main body respectively, this positive conductive traces and this negative pole conductive traces is arranged side by side and linear extension on this material main body;
Luminescence unit, it has a plurality of light-emitting diode chip for backlight unit that are arranged on this material main body, wherein each light-emitting diode chip for backlight unit has positive terminal and negative pole end, and the positive and negative extreme of described light-emitting diode chip for backlight unit electrically connects with series connection or mode and this positive and negative electrode conductive traces in parallel respectively; And
The colloid unit, it is covering on this base material unit and this luminescence unit;
When the energising of this luminescence unit by this positive and negative conductive traces produced light, this light formed continuous light-emitting zone on this colloid unit by the guiding of this colloid unit.
2, the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1 is characterized in that: this base material unit is printed circuit board (PCB) soft base plate, aluminium base or ceramic substrate.
3, the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1 is characterized in that: described light-emitting diode chip for backlight unit positive and negative extreme by corresponding lead and in the mode of routing, with this positive and negative electrode conductive traces electric connection.
4, the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1 is characterized in that: described light-emitting diode chip for backlight unit positive and negative extremely by corresponding tin ball and to cover brilliant mode is electrical connected with this positive and negative electrode conductive traces.
5, the encapsulating structure of light-emitting diode chip for backlight unit according to claim 4 is characterized in that: this tin ball covers brilliant on this substrate with hot pressing mode.
6, the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1 is characterized in that: the mode that described light-emitting diode chip for backlight unit is arranged with straight line is arranged on this base material unit.
7, the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1 is characterized in that: described light-emitting diode chip for backlight unit is arranged on this base material unit in the mode of many linear array.
8, the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1 is characterized in that: each light-emitting diode chip for backlight unit is a blue light-emitting diode, and this colloid unit is a fluorescent colloid.
9, the encapsulating structure of light-emitting diode chip for backlight unit according to claim 1 is characterized in that: this colloid unit is an epoxy resin.
10, a kind of method for packing of light-emitting diode chip for backlight unit is characterized in that, comprises the following steps:
The base material unit is provided, and wherein this base material unit has material main body and is formed at the positive conductive traces and the negative pole conductive traces of this material main body respectively, this positive conductive traces and this negative pole conductive traces is arranged side by side and linear extension on this material main body;
Luminescence unit is set on this material main body, wherein this luminescence unit has a plurality of light-emitting diode chip for backlight unit that are arranged on this material main body, each light-emitting diode chip for backlight unit has positive terminal and negative pole end, and the positive and negative extreme of described light-emitting diode chip for backlight unit is electrical connected with series connection or mode and this positive and negative electrode conductive traces in parallel respectively; And
Covering the colloid unit on this base material unit and this luminescence unit, so that when the energising of this luminescence unit by this positive and negative conductive traces produces light, this light forms continuous light-emitting zone on this colloid unit by the guiding of this colloid unit.
11, the method for packing of light-emitting diode chip for backlight unit according to claim 10 is characterized in that: this base material unit is printed circuit board (PCB), soft base plate, aluminium base or ceramic substrate.
12, the method for packing of light-emitting diode chip for backlight unit according to claim 10 is characterized in that: described light-emitting diode chip for backlight unit positive and negative extremely by corresponding lead and in the mode of routing is electrical connected with this positive and negative electrode conductive traces.
13, the method for packing of light-emitting diode chip for backlight unit according to claim 10 is characterized in that: described light-emitting diode chip for backlight unit positive and negative extremely by corresponding tin ball and to cover brilliant mode is electrical connected with this positive and negative electrode conductive traces.
14, the method for packing of light-emitting diode chip for backlight unit according to claim 13 is characterized in that: this tin ball covers brilliant on this substrate with hot pressing mode.
15, the method for packing of light-emitting diode chip for backlight unit according to claim 10 is characterized in that: the mode that described light-emitting diode chip for backlight unit is arranged with straight line is arranged on this base material unit.
16, the method for packing of light-emitting diode chip for backlight unit according to claim 15 is characterized in that: this base material unit is cut into many light-emitting diodes, and described light-emitting diode permutation and combination is become arbitrary shape.
17, the method for packing of light-emitting diode chip for backlight unit according to claim 10 is characterized in that: described light-emitting diode chip for backlight unit is arranged on this base material unit in the mode of many linear array.
18, the method for packing of light-emitting diode chip for backlight unit according to claim 17 is characterized in that: this base material unit is cut into many light-emitting diodes, and described light-emitting diode permutation and combination is become arbitrary shape.
19, the method for packing of light-emitting diode chip for backlight unit according to claim 10 is characterized in that: each light-emitting diode chip for backlight unit is a blue light-emitting diode, and this colloid unit is a fluorescent colloid.
20, the method for packing of light-emitting diode chip for backlight unit according to claim 10 is characterized in that: this colloid unit is an epoxy resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100798619A CN100563002C (en) | 2006-05-15 | 2006-05-15 | The encapsulating structure of light-emitting diode chip for backlight unit and method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100798619A CN100563002C (en) | 2006-05-15 | 2006-05-15 | The encapsulating structure of light-emitting diode chip for backlight unit and method thereof |
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| CN101075609A CN101075609A (en) | 2007-11-21 |
| CN100563002C true CN100563002C (en) | 2009-11-25 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101546756B (en) * | 2008-03-25 | 2010-11-10 | 宏齐科技股份有限公司 | LED package structure with multifunctional integral chip and package method thereof |
| CN101562174B (en) * | 2008-04-16 | 2011-05-18 | 宏齐科技股份有限公司 | LED chip encapsulating structure for backlight module and preparing method thereof |
| CN101587883B (en) * | 2008-05-23 | 2011-09-28 | 宏齐科技股份有限公司 | Chip packaging structure of light emitting diode using substrate as lamp cover and manufacturing method thereof |
| KR20100093984A (en) | 2009-02-17 | 2010-08-26 | 엘지이노텍 주식회사 | Light emitting device and fabrication method thereof |
| TWI472058B (en) | 2010-10-13 | 2015-02-01 | Interlight Optotech Corp | Light emitting diode device |
| CN102456701B (en) * | 2010-10-26 | 2013-11-13 | 英特明光能股份有限公司 | Light-emitting device |
| CN103423649A (en) * | 2013-08-20 | 2013-12-04 | 揭阳市利业光电有限公司 | LED (Light-Emitting Diode) lamp bead string free of divider resistance |
| CN104733601B (en) * | 2013-12-20 | 2017-11-28 | 祯信股份有限公司 | Light emitting diode film circuit board and decoration material |
| CN104143548A (en) * | 2014-08-15 | 2014-11-12 | 刘镇 | Crystal covering type LED lamp |
| CN206558500U (en) * | 2016-09-30 | 2017-10-13 | 深圳市玲涛光电科技有限公司 | Light-emitting component, backlight source module and electronic equipment |
| CN107946269B (en) * | 2017-12-18 | 2024-03-26 | 华天科技（西安）有限公司 | Packaging structure and packaging method of sensing chip |
| CN108172568A (en) * | 2017-12-26 | 2018-06-15 | 黄星群 | A kind of preparation method of LED illuminator for electronic display |
| CN113108245A (en) * | 2020-01-09 | 2021-07-13 | 致伸科技股份有限公司 | Light source module and electronic device thereof |
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2006
- 2006-05-15 CN CNB2006100798619A patent/CN100563002C/en not_active Expired - Fee Related
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