CN100562743C - Sensor device - Google Patents
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- CN100562743C CN100562743C CNB2005800258277A CN200580025827A CN100562743C CN 100562743 C CN100562743 C CN 100562743C CN B2005800258277 A CNB2005800258277 A CN B2005800258277A CN 200580025827 A CN200580025827 A CN 200580025827A CN 100562743 C CN100562743 C CN 100562743C
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Abstract
The invention provides a kind of sensor device, it comprises: chip (20) is formed for the transmission line (2) of propagation of electromagnetic waves therein on substrate (1); The electromagnetic wave generator (7) of (10) is used to generate electromagnetic waves; Coupling device (9); And detecting device (5), be used for detecting the electromagnetic wave propagation state on the optional position of electromagnetic wave that this transmission line (2) is propagated at this transmission line.Be arranged near object (4) of this transmission line (2) and the reciprocation between this electromagnetic wave by this detecting device (5) detection, with this object of sensing (4) and this electromagnetic spatial interaction state.
Description
Technical field
The present invention relates to the sensor device and the method for a kind of physical property values of utilizing the frequency electromagnetic waves detected object of millimeter wave in the terahertz waves zone etc.
Background technology
In recent years, developed and utilized the electromagnetic harmless detection technology of millimeter wave to terahertz (THz) frequency (30GHz is to 30THz).Example of technology in the electromagnetic wave application in this frequency band of now developing comprises that the imaging technique that utilizes safe fluorescence equipment to substitute the XRF instrument, the absorption spectrum that obtains material or complex permittivity are with the spectral technique of surveying (perhaps checking) bonding state wherein, the technology of analysis biomolecule and the technology of estimating carrier concn or mobility.
As a kind of sensing system that utilizes terahertz electromagnetic wave, disclose a kind of method of preparing photocon for Japanese Patent Application Laid-Open H10-104171 number, wherein setting is also served as the antenna of electrode and this photocon is shone ultra-short pulse laser so that produce and detect terahertz electromagnetic wave on the photoconductive film that forms on the substrate.Owing to there is the absorption line of various materials in the terahertz range, become more important for using terahertz electromagnetic wave such as the detection technology of analysis, analysis of moisture content and the biomolecule analysis of plastics, compound substance etc.By moving the material be detected (or being examined) two-dimensionally, also may obtain two dimensional image by for example imaging based on the difference of electro-magnetic wave absorption coefficient.
In this case, owing to adopt the aerial image system to have the problem that needs optical axis alignment so far always, and be difficult to improve the problem of sensitivity when measuring dusty material or fluent material.Thereby the terahertz evanescent wave (evanescent wave) that has proposed to be positioned on the terahertz waves reflecting prism to the material that is detected in recent years and utilized the total reflection on the upper surface of this prism to produce carries out the method for sensing (referring to Extended Abstracts of The 51
StMeeting of TheJapan Society of Applied Physics and Related Societies, 28p-YF-7).In the case, because based on evanescent wave be detected interaction absorbance spectrum between the material or the like, any form that can present with object for example irrespectively measure by liquid state, powdered form etc.
But the method that adopts prism is restricted reducing to propagate on the beam diameter of terahertz electromagnetic wave, thereby typically has to and the corresponding maximum space resolution that is about 100 μ m of the number of wavelengths magnitude of terahertz electromagnetic wave.Thereby, when in the time will observing the two dimensional image that is detected object or under two-dimensional array form, arranging the object that will be detected, need higher resolution.In addition, adopt prism also to need low-loss expensive optical device in the terahertz frequency band, and limit reducing of whole optical system size.In addition, because optical system is vulnerable to the influence of airborne humidity, must be placed on whole optical system in the nitrogen environment, this hinders the minimizing of cost.
Summary of the invention
In view of the above problems, according to one aspect of the present invention, provide a kind of sensor device, it comprises and is used for the transmission line of propagation of electromagnetic waves therein; And be used for detecting this electromagnetic wave propagation status detection device in any position of this transmission line, wherein detect and be arranged near object of this transmission line and the reciprocation between this electromagnetic wave.
According to another aspect of the present invention, a kind of sensor device is provided, it comprises and is used for the transmission line of propagation of electromagnetic waves therein; Be used to detect electromagnetic wave propagation status detection device by this transmission line; And be arranged near the flow path that object is moved therein of this transmission line, wherein detect the reciprocation between this object and this electromagnetic wave.
In the present invention, for example, propagate terahertz electromagnetic wave, and utilization drains to the physical property sensing that near the airborne electromagnetic field (for example evanescent wave) of this transmission line is detected object by the distributed constant line made from medium.In order to obtain high-resolution two-dimensional image, by be positioned on the transmission line be detected object near be provided for the probe of thz detection and utilize this probe to scan, realize that the detection under the high spatial resolution becomes possibility.Under these circumstances, by allowing this sensor device, can also realize 1/10 or littler observation of wavelength as the work of terahertz optical microscope for scanning near field.Can be for example according to the Pockels effect on electric light (EO) crystal by reading the terahertz electromagnetic wave of polarisation of light change-detection from this probe.
Can be by the terahertz electromagnetic wave that this transmission line is propagated from the outside irradiation of this transmission line.As an alternative, can be on this transmission line integrated terahertz generator (electromagnetic wave generation device).In the case, can obtain electromagnetic wave is not subjected to moist influence to be arranged in the air, do not need optics adjustment and size to reduce to become possible advantage.For this terahertz generator, can adopt such structure, wherein photocon is positioned on certain part of this transmission line, and a short-pulse laser is from external irradiation, and perhaps the CW laser that two resonance frequencies are different slightly is multiplexed and from external irradiation.In order effectively terahertz electromagnetic wave to be limited in this thz transmission line, distributed Bragg reflector (DBR) structure or analog can also be set on this thz transmission line.In addition,, can adopt such structure, wherein near integrated small current injection device this transmission line or on same substrate such as quantum cascade laser for light source.
When under two-dimensional array form, arranging a plurality of thz transmission line and applying when being detected object, may be provided for the chip of high-speed inspection by ink-jet etc.In addition, when adopting many probes to dispose, can obtain a plurality of thz responses that are detected object for the high speed sensing.
Except being detected the lip-deep technology that object is applied to transmission line, also may adopt near the technology of the flow path that formation liquid can pass transmission line, and when the liquid material that is detected flows therein or replaced continuously, carry out the high speed sensing.
According to sensor device of the present invention and method, even be detected under the very little situation of object amount, also can for example carry out the spectral analysis of millimeter wave at high speed to the terahertz waves interval, on sample form, guarantee high degree of freedom simultaneously.In these are analyzed, can under 100 μ m or littler high spatial resolution, carry out sensing by the object that is detected to two-dimensional shapes.In addition, owing to use undersized sensor chip, may provide the sensor device that contains entire optical system that size is little, cost is low.
From following being inconjunction with the description of the drawings, it is clear that other features and advantages of the present invention can become, the identical or similar part of similar Reference numeral representative in the accompanying drawing.
Description of drawings
Be included in the instructions and constitute the accompanying drawing illustrative various embodiments of the present invention of the part of this instructions, and and explanation be used for explaining principle of the present invention together.
Fig. 1 is a schematic configuration diagram, is provided to show sensor chip and total system according to example 1 of the present invention;
Fig. 2 is the perspective illustration that illustrates according to two-dimensional array chip of the present invention;
Fig. 3 is the schematic plan view that illustrates according to the sensor chip that has resonance structure of example 2 of the present invention;
Fig. 4 A and 4B are the diagrammatic representations that respectively is used to explain the Fourier spectrum of terahertz electromagnetic wave;
Fig. 5 is the perspective illustration that illustrates according to the sensor chip of example 3 of the present invention;
Fig. 6 is the constructed profile of modification example that the sensor chip of this foundation example 3 of the present invention is shown;
Fig. 7 is the constructed profile according to the sensor chip of example 4 of the present invention; And
Fig. 8 is the perspective illustration according to the sensor chip of example 5 of the present invention.
Embodiment
Below, although will the sensor device that use terahertz electromagnetic wave be described with reference to photocon and each embodiment that contains the integrated component of this photocon, its material, structure, device, size etc. are not subjected to following illustrated restriction.In addition, it should be understood that the present invention is not subjected to the restriction of the electromagnetic special properties that the specific use of each element disclosed herein uses and produce.
(example 1)
In first example of the present invention, the sensing system that the terahertz sensor chip is provided as shown in fig. 1 and is used for this chip.In sensor chip part 20, be transmission line 2 and the antenna 3 that forms the copline band line structure made from the Ti/Au electrode on 650 μ m and the Si substrate 1 with high resistance (＞1k Ω cm) at thickness.In this embodiment, electrode is that 20 μ m mutual distances are that the band of 50 μ m is formed by two width.But, the invention is not restricted to this.Antenna 3 is dipole antennas, is used for will propagating into transmission line 2 from the terahertz electromagnetic wave 10 of outside irradiation effectively.Can be from this terahertz electromagnetic wave 10 of surface irradiation of transmission line 2 be set thereon.As an alternative, can be from this terahertz electromagnetic wave of back side irradiation of substrate 1, because high resistance Si is low to the absorption of terahertz electromagnetic wave.
Here, substrate can be by making at the loss of terahertz wavelengths district low quartz or resin.Antenna also can be butterfly antenna or the log-periodic antenna as broad-band antenna.Transmission line can be co-planar line, microstrip line or the like.
Terahertz electromagnetic wave meeting of propagating by transmission line 2 and be applied to and be detected object 4 reciprocations on this chip surface with the change spread state or show specific scattering properties, thereby can be surveyed physical property.This is to drain in the air simultaneously because electromagnetic wave is propagated by transmission line 2.Being detected object 4 typically has the external dimensions that is slightly less than 100 μ m and can be formed (be four points among Fig. 1, but the quantity of point being unrestricted) as shown in fig. 1 by a plurality of points on the transmission line 2.
In order to detect spread state, the metal probe 5 of for example using image antenna equally to stand.This system configuration becomes through metal probe 5 to receive the component that is scattered via the terahertz electromagnetic wave that transmission line 2 is propagated by interrupting by electric light (EO) crystal 6 such as ZnTe.The EO crystal 6 is adopted the known technology of reading the variation in the light polarization state, and wherein this polarization state changes that the Pockels effect that is by the amplitude amplitude that depends on terahertz electromagnetic wave causes.
For whole sensing system is described, the output that pulsewidth is about the femto-second laser 7 of 100 femtoseconds is divided into two optical paths by beam splitter 12.In excitation side, photoconductive antenna 8 irradiations that this laser instrument is made to low-temperature epitaxy GaAs (LT-GaAs) or analog with output terahertz electromagnetic wave pulse 10, focus on the latter on the antenna 3 by paraboloidal mirror 9 then.In probe side, make this laser enter above-mentioned EO crystal 6 by reverberator 18 and time delay device 11, and make the reflected light by the modulation of Pockels effect enter balance receiver 15 through quarter wave plate 13 and Wollaston prism 14, wherein this balance receiver 15 has two light receiving part 16a and 16b.Utilize time delay device 11 to control so that the terahertz electromagnetic wave that metal probe 5 is read and synchronized with each other, thereby allow to read out signal from being detected the object desired site to the laser of EO crystal 6 irradiation.Obtain signal by object is positioned at towards being detected of will observing regional moving metal probe 5 and from it, may obtain at high speed with single-sensor chip 20 on a plurality of relevant information of object that are detected.Usually, also existence utilizes two-dimensional image data to carry out the method for a plurality of sensings simultaneously.But because the spatial resolution of terahertz electromagnetic wave is about 100 μ m of wavelength magnitude, to observe on the spacing of this spatial resolution be impossible being equal to or less than.In addition, improve sensitivity and be restricted, thereby the concentration or the volume that are detected object can not be made less than essential value.In the time will surveying biological correlation molecule, the very little inspection of sample size is used in expectation.Method according to use probe of the present invention can reduce these restrictions.In addition, when using probe's point to be 10 μ m or littler near field probe, can to single be detected object obtain spatial resolution be 10 μ m's or littler Two dimensional Distribution, accurately measure and become possibility thereby be used for surveying near field that the bonding state such as the polymkeric substance of protein or DNA distributes.
In this example, by being that example is illustrated with the metal needle probe.But this probe can be the tip of the terahertz Transmission Fibers made with resin, the metal waveguide that has little opening, photonic crystal fiber or the like.In addition, when not requiring high spatial resolution, can use electro-optic crystal to be directly adjacent to the method for object obviously.
Except the method for using electro-optic crystal, can use and utilize photocon, bolometer or other can detect the method for the device of terahertz electromagnetic wave.
Fig. 2 illustrates the example of the chip 25 that is used to carry out high-speed inspection, and it has a plurality of transmission lines with array format.Every the transmission line 21 identical with the structure shown in Fig. 1 arranged with two-dimensional array form.Can be detected object 22 to apply each by array formation nozzle 23 at a high speed by ink ejecting method.The terahertz electromagnetic wave bundle integrally scatters and is radiated on the back side (for example 3 square centimeters) of substrate 24, and by being arranged on the antenna coupling in every transmission lines 21.Also can arrange the probe's (not shown) that is used for surveying if need by two-dimensional array form.
By under this mode, adopting the probe system, can tackle the change of size or system neatly, and can also provide spatial resolution the higher and higher sensor chip of sensitivity.In addition, need not carry out complex process, and can make up the disposable sensor system that does not need to clean etc. in chip side.
(example 2)
In second example of the present invention, as shown in Figure 3, be provided with the distributed reflective regions 31a and the 31b of periodic structure in the transmission line 32 on the substrate 30 of sensor chip 35.By adopting such structure, limit the specific frequency components that shines from the outside the terahertz electromagnetic wave of antenna 34 effectively, this is useful to the situation of wherein carrying out high-sensitivity measurement on characteristic frequency.
Fig. 4 A and 4B are diagrammatic representations, and they illustrate under the situation that adopts this structure electromagnetic Fourier spectrum image in the transmission line 32.Fig. 4 A is used for for example from the terahertz electromagnetic pulse of Fig. 1 with the emission of the photocon shown in 8.Fig. 4 B is used for the electromagnetic wave that this example limits in transmission line.The stopband that the DBR reverberator produces depends on the length L of this sensing part corresponding to W, can produce one or more resonant mode m in this stopband.
Owing to resonance frequency depends on that being detected object 33 changes, so can adopt the method for the change that detects tuning-points.Under these circumstances, a plurality of when being detected object 33 when being provided with as shown in Figure 3, can adopt the method that scans the probe of explanation in the example 1 for example measuring electromagnetic distribution of amplitudes and Fourier spectrum in the transmission line 32, and measure according to these and to calculate the physical property that is detected object 33.
In addition, as shown in Figure 2 by under the situation of array format transmission line, when resonance frequency being arranged to and not simultaneously according to the position, can be on chip piece survey frequency correlativity at high speed.As for the structure of trapped electromagnetic wave, can adopt photon crystal structure or photon fractal structure.
(example 3)
In the 3rd example of the present invention,, make to be detected liquid object data stream and to cross as shown in Figure 5 flow path with the integrated formation of transmission line with wherein to be applied to the lip-deep method of sensor chip different being detected object.
In the example shown in Figure 5, signalization line 44a, 44b and insulator 42 on Si substrate 40 serve as the microstrip line of thz transmission line thereby form, and Reference numeral 41 is a ground plane 41.Certainly, it can be a copline band line as explanation in the example 1.By gap portion 46, signal wire 44a, 44b separate each other, and the LT-GaAs epitaxial loayer of only transferring below this gap portion 46 produces the photocon 45 of terahertz electromagnetic wave pulse to form by optical pulse irradiation.Can also be on an end of this transmission line the integrated EO crystal 47 that is used for the detected transmission state.Between signal wire 44a, 44b and ground plane 41, form the flow path 43 that representative section is of a size of 10 μ m * 20 μ m, press shown in the arrow mobile therein to allow to serve as the liquid that is detected object.Can transmit this liquid by Micropump, ink-jet system or the like.Can be by utilizing resin-shaped grooving structure, this groove structure being provided with the lid made from quartz glass etc. 59 and carrying out the structure that bonding method produces flow path 43 such as benzocyclobutene (BCB or Cyclotene (trade name)), polyimide or polysilane.During when inserting liquid but not as fluid treatment, can use simple structure not with cover.In addition, in the example shown in Figure 5, along the horizontal direction of signal wire groove is set nearby, as shown in Figure 5.But as shown in Figure 6, flow path 62 can just in time be positioned at the below of signal wire 44 to improve sensitivity.
The sensing system of terahertz electromagnetic wave is used in explanation now.Although can adopt the terahertz pulse system of the femto-second laser of explanation in application examples such as the example 1, here by adopting the system of terahertz continuous wave to explain as an example with the bat difference that produces based on two semiconductor laser 55a, 55b.Two semiconductor laser 55a, 55b be can be in 0.1 to 3 terahertz range the laser instrument of stable different frequency.By coupling mechanism 58 two laser beam are mixed with each other through reverberator 56, then the gap portion 46 of this photocon of irradiation under the power of about 5mW.This moment, when signal wire 44a, 44b are applied about 10 volts electric field 60 and the electromagnetic wave of beat frequency correspondence propagate by the microstrip line that comprises signal wire 44a and 44b.The object interaction effect that is detected in the electromagnetic wave of this propagation and the flow path 43, and photoconductive detecting element 57 these electromagnetic states of detection by having metal probe 48.By taking out part laser, then utilize the 50 realization times of time delay device to adjust and, carrying out this detection by measuring electric current 49 simultaneously from this light source.On the other hand, in integrated EO crystal 47, by utilizing time delay device 51, quarter wave plate 52, Wollaston prism 53 and balance receiver 54 to detect as the same procedure of explanation in the example 1.
When beat frequency changes, can observe the spectrum in 0.1 to 3 terahertz range.The resonance structure that explanation in the example 2 for example can be set is to strengthen electromagnetic restriction.
In order to measure the characteristic of whole fluid, can utilize EO crystal 47 to carry out and detect.In addition, in order to understand the distribution in the fluid, can when scanning, probe 48 measure utilizing.
In this example, the measurement in the solution is possible, and can carry out the terahertz electromagnetic wave sensing according to the process of material reaction in real time.
(example 4)
In the 4th example of the present invention, the quantum cascade laser that is used for continuous wave is used as thz light source.In Fig. 7, coupling from the electromagnetic wave of thz laser 61 so that propagate into by being arranged on the transmission line that signal wire 63 on the substrate 70 and medium 64,67 constitute.Can be formed integrally as this thz laser and this transmission line so that an integrated component to be provided.
Be detected object 65 be placed on this transmission line and utilize probe 66 with each example described above in survey under the identical mode.Can also utilize the near field probe to carry out spatial resolution in the case is 10 μ m or littler terahertz near field imaging.
(example 5)
In the 5th example of the present invention, as shown in Figure 8, transmission line comprises single conductor, and is provided with near this transmission line as example 3 and moves the flow path that is detected object by it.For dielectric substrate 80, for example adopting thickness is the polyolefin panels of 300 μ m, and the Au line 82 and the thickness that form the thick 5 μ m of wide 10 μ m in its surface are about the last dielectric layer 81 that 100 μ m make with polyolefin panels.Au line 82 is so-called single lines, and it has single conductor and have good high frequency propagation charcteristic on arrow 90 indicated directions, further improves this propagation characteristic by surrounding with medium.After forming Au line 82, last polyolefin panels 81 heat-treat with following polyolefin panels 80 combinations.As an alternative, can be by being solidified to form dielectric layer 81 then at the liquid organic material that applies big film thickness on the substrate 80.
In addition, in dielectric layer 81, be formed for putting into therein the flow path 84 that is detected object, and be detected object along the injection of the direction shown in the arrow 88 and along the discharge of the direction shown in the arrow 89.Incidentally, be used for containing the space that is detected object and needn't be necessary for flow path form, only be used for holding the container that is detected object but can alternatively provide.The shape and size of this flow path for example are about the square of tens μ m for the length of side, and, near the intersection that is detected object part (flow path 84) and transmission line (Au line 82), form the hole 86 that a diameter is about 10 μ m for detection probe 85 is inserted in the flow path 84.Can be inserted into the probe 85 who illustrates in the previous examples for example in the hole 86 to detect the electromagnetic wave propagation state.Here, when this hole has can allow the large scale that the probe scans therein the time, can also check the distribution that is detected object.
Be coupled to electromagnetic wave on this sensor chip and the method that detects can be identical with the method that illustrates in the previous examples.But, can also realize the coupling of terahertz electromagnetic wave 87 and this single line by the diffraction grating 83 that forms on online 82.In addition, coupling device is not limited to diffraction grating, but also comprises antenna or the like.In addition, can also adopt and be integrated into photocon on this sensor chip and use method from this element of rayed of outside.
For being limited in, electromagnetic wave is detected near the object part, can utilize near the medium the intersection of flow path 84 and transmission line 82 to form photon crystal structure or photon fractal structure (the two is all not shown), perhaps also can on the other end of transmission line 82, form diffraction grating so that resonance structure to be provided, thereby can improve sensitivity.
Owing to can make many obviously extensively different embodiment of the present invention under the spirit and scope of the present invention not deviating from, should be understood that except by claims definition, the present invention is not subjected to the restriction of these specific embodiments.
The application requires the right of priority of 2004-223665 number of applying on July 30th, 2004 and the 2005-154772 Japanese patent application of applying on May 27th, 2005, and these two parts of patented claims are included as a reference.
Claims (11)
1. sensor device comprises:
Transmission line is used for by its propagation of electromagnetic waves, and this electromagnetic wave has 30GHz to the interior frequency of 30THz scope; And
Pick-up unit, this electromagnetic wave propagation state is detected in any position that is used on this transmission line,
Wherein, detect and be arranged near object of this transmission line and the reciprocation between this electromagnetic wave, and
Wherein, described transmission line has and is used to limit the electromagnetic resonance structure of being propagated, and described resonance structure comprises the distributed reflective regions that has periodic structure.
2. according to the sensor device of claim 1, also comprise the electromagnetic wave generating apparatus.
3. according to the sensor device of claim 2, wherein transmission line and electromagnetic wave generating apparatus are arranged on the same substrate.
4. according to the sensor device of claim 2, wherein this electromagnetic wave generating apparatus is that electric current is pouring-in.
5. according to the sensor device of claim 1, wherein this pick-up unit comprises thin linear probe.
6. according to the sensor device of claim 1, wherein this pick-up unit comprises the probe of band point, and this sharp diameter is not more than 1/10 of the electromagnetic wavelength propagated.
7. according to the sensor device of claim 1, wherein this this electromagnetic wave propagation state is detected in a plurality of positions of this pick-up unit on transmission line.
8. according to the sensor device of claim 7, wherein this pick-up unit is by means of the relative position relation that changes by scanning between this pick-up unit and this transmission line, thereby detects the electromagnetic wave propagation states in a plurality of positions.
9. according to the sensor device of claim 7, the described pick-up unit that wherein detects the electromagnetic wave propagation state in a plurality of positions comprises electro-optic crystal.
10. a sensor device comprises;
Transmission line is used for by its propagation of electromagnetic waves, and this electromagnetic wave has 30GHz to the interior frequency of 30THz scope;
Pick-up unit is used to detect the electromagnetic wave propagation state by this transmission line; And
Be arranged near the flow path of this transmission line, be used to allow object move therein,
Wherein, detect the reciprocation between this object and this electromagnetic wave, and
Wherein, described transmission line has and is used to limit the electromagnetic resonance structure of being propagated, and described resonance structure comprises the distributed reflective regions that has periodic structure.
11., wherein provide this pick-up unit in a plurality of positions according to the sensor device of claim 10.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP223665/2004 | 2004-07-30 | ||
| JP2004223665 | 2004-07-30 | ||
| JP154772/2005 | 2005-05-27 |
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| CN1993613A CN1993613A (en) | 2007-07-04 |
| CN100562743C true CN100562743C (en) | 2009-11-25 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5710430A (en) * | 1995-02-15 | 1998-01-20 | Lucent Technologies Inc. | Method and apparatus for terahertz imaging |
| US5729017A (en) * | 1996-05-31 | 1998-03-17 | Lucent Technologies Inc. | Terahertz generators and detectors |
| US5936237A (en) * | 1995-07-05 | 1999-08-10 | Van Der Weide; Daniel Warren | Combined topography and electromagnetic field scanning probe microscope |
| US5952818A (en) * | 1996-05-31 | 1999-09-14 | Rensselaer Polytechnic Institute | Electro-optical sensing apparatus and method for characterizing free-space electromagnetic radiation |
| US6320191B1 (en) * | 1998-03-27 | 2001-11-20 | Picometrix, Inc. | Dispersive precompensator for use in an electromagnetic radiation generation and detection system |
| CN1445529A (en) * | 2003-03-27 | 2003-10-01 | 上海交通大学 | Imaging method of tera Hertz wave 2D electro-optical area array |
-
2005
- 2005-07-27 CN CNB2005800258277A patent/CN100562743C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5710430A (en) * | 1995-02-15 | 1998-01-20 | Lucent Technologies Inc. | Method and apparatus for terahertz imaging |
| US5936237A (en) * | 1995-07-05 | 1999-08-10 | Van Der Weide; Daniel Warren | Combined topography and electromagnetic field scanning probe microscope |
| US5729017A (en) * | 1996-05-31 | 1998-03-17 | Lucent Technologies Inc. | Terahertz generators and detectors |
| US5952818A (en) * | 1996-05-31 | 1999-09-14 | Rensselaer Polytechnic Institute | Electro-optical sensing apparatus and method for characterizing free-space electromagnetic radiation |
| US6320191B1 (en) * | 1998-03-27 | 2001-11-20 | Picometrix, Inc. | Dispersive precompensator for use in an electromagnetic radiation generation and detection system |
| CN1445529A (en) * | 2003-03-27 | 2003-10-01 | 上海交通大学 | Imaging method of tera Hertz wave 2D electro-optical area array |
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| CN1993613A (en) | 2007-07-04 |
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