CN100470305C - System and method for protecting microelectromechanical systems array using structurally reinforced back-plate - Google Patents
System and method for protecting microelectromechanical systems array using structurally reinforced back-plate Download PDFInfo
- Publication number
- CN100470305C CN100470305C CNB2005101051035A CN200510105103A CN100470305C CN 100470305 C CN100470305 C CN 100470305C CN B2005101051035 A CNB2005101051035 A CN B2005101051035A CN 200510105103 A CN200510105103 A CN 200510105103A CN 100470305 C CN100470305 C CN 100470305C
- Authority
- CN
- China
- Prior art keywords
- backboard
- electronic installation
- array
- inside surface
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Abstract
Disclosed is an electronic device utilizing interferometric modulation and a package of the device. The packaged device includes a substrate 101, an interferometric modulation display array 111 formed on the substrate 101, and a back-plate 130. The back-plate is placed over the display array 111 with a gap 124 between the back-plate and the display array. The depth of the gap may vary across the back-plate. The back-plate can be curved or have a recess on its interior surface facing the display array. Thickness of the back-plate may vary. The device may include reinforcing structures which are integrated with the back-plate.
Description
Technical field
The present invention relates to MEMS (micro electro mechanical system) (MEMS), more specifically, the present invention relates to protect the MEMS device to exempt from damage.
Background technology
MEMS (micro electro mechanical system) (MEMS) comprises micromechanical component, driver and electronic component.Micromechanical component can adopt deposition, etching or other several portions that can etch away substrate and/or institute's deposited material layer maybe can add several layers and make with the micromachined technology that forms electricity and electromechanical assembly.One type MEMS device is called as interferometric modulator.Interferometric modulator can comprise the pair of conductive plate, one of them or the two all can be transparent whole or in part and/or be reflectivity, and can relative motion when applying a suitable electric signal.One of them plate can comprise a quiescent layer that is deposited on the substrate, and another plate can comprise a metal partion (metp) that separates by a clearance and this quiescent layer.
Said apparatus is with a wide range of applications, and in this technology, utilizes and/or revises the characteristic of these types of devices so that its performance can be used for improving existing product and makes still undeveloped at present new product will be rather useful.When design utilized the commercial product of described MEMS technology, cost, reliability and technological requirement had been considered in the exploitation of encapsulation.The encapsulation relevant with the MEMS device can be incorporated various devices into and avoid the external force damage with protection MEMS element.
Summary of the invention
System of the present invention, method and device all have many aspects, and arbitrary single aspect all can not determine its desired characteristic separately.Now, its main characteristic is carried out brief description, this not delimit the scope of the invention.Checking this explanation, especially reading title for after the part of " embodiment ", how people provides the advantage that is better than other display device if can understanding device of the present invention.
One aspect of the present invention provides a kind of electronic installation.Described electronic installation comprises that one has substrate, a microelectromechanicdevices devices array and a backboard on a surface.Described microelectronic device matrix-like is formed on the described surface of described substrate and has the back side that deviates from described substrate.Described backboard is arranged on the described array and has an inside surface and an outside surface.The inside surface of described backboard faces the back side of described array and has a gap betwixt.Described outside surface deviates from described substrate.Described electronic installation further comprises the reinforcement structure that one or more and described backboard combines.Described reinforcement structure increases the rigidity of described backboard.In described electronic installation, the distance between the inside surface of described backboard and the surface of described substrate can change on the surface of described substrate.
Another aspect of the present invention provides a kind of electronic installation.Described electronic installation comprises that one has substrate, a micro electronmechanical array and a backboard on a surface.Described matrix-like is formed on the described substrate surface and has the back side that deviates from described substrate.Described backboard is arranged on the described array and has an inside surface.Described inside surface faces the back side of described array and has a gap betwixt.Described backboard has the thickness along the one edge variation.
Another aspect of the present invention provides a kind of electronic installation.Described electronic installation comprises: a substrate; One interferometric modulator array and a backboard.Described matrix-like is formed on the described substrate and has the back side that deviates from described substrate.Described backboard is arranged on the described array and has an inside surface that faces described array, and has a gap between the back side of the inside surface of described backboard and described array.Described device further comprises the direct member that contacts the back side of described array of inside surface that is used to prevent described backboard.
Another aspect of the present invention provides a kind of method of making one electronic installation.Described method comprises: a middle device is provided, a backboard is provided, described backboard is placed on the described middle device, and bonding described backboard and described substrate.Described middle device comprises that a substrate and is formed at the microelectromechanicdevices devices array on the described substrate.Described backboard has an inside surface and an outside surface.Described backboard be formed at described inside surface and outside surface in one or more reinforcement structures on one of at least combine.Described backboard the mode on the described middle device array of being arranged at makes the inside surface of described backboard face the back side of described array and has a gap therebetween.Another aspect of the present invention provides a kind of electronic installation, and it is made by the above-mentioned method that is used to make this electronic installation.
One side more of the present invention provides a kind of electronic installation.Described device comprises that a substrate, is formed at microelectromechanicdevices devices array on the described substrate, an and backboard that places on the described array.Described backboard has an inside surface and an outside surface.The inside surface of described backboard faces described array and has a gap therebetween.Described outside surface deviates from described substrate.Distance between the inside surface of described backboard and the described substrate changes on described substrate.
Another aspect of the present invention provides a kind of electronic installation.Described electronic installation comprises the member, the member that is used for providing microelectromechanicdevices devices on described supporting member that are used to support a micro-mechanical device array, is used to cover the described member that the member of member is provided and is used to strengthen described covering member.
Another aspect of the present invention provides a kind of method of making one electronic installation.Described method comprises: a middle device is provided, and described middle device comprises that a substrate and is formed at the microelectromechanicdevices devices array on the described substrate.Described method further is included in and forms a backboard on the array of described middle device and existence one gap between described backboard and described array.Described backboard has an inside surface that faces described array, and the distance between described inside surface and the described substrate changes on described substrate.Another aspect of the present invention provides a kind of electronic installation, and it is made by the above-mentioned method that is used to make this electronic installation.
Description of drawings
Fig. 1 is first-class axle figure, it shows the part of an embodiment of an interferometric modulator display, wherein one of one first interferometric modulator removable reflection horizon is in an off-position, and a removable reflection horizon of one second interferometric modulator is in an excited target position.
Fig. 2 is a system block diagram, and it shows that one comprises an embodiment of the electronic installation of one 3 * 3 interferometric modulator displays.
Fig. 3 is the removable mirror position of an exemplary embodiment of interferometric modulator shown in Figure 1 and the graph of a relation of the voltage that applies.
Fig. 4 is one group of synoptic diagram that can be used for driving the row and column voltage of interferometric modulator display.
Fig. 5 A is presented at an exemplary frame of display data in 3 * 3 interferometric modulator displays shown in Figure 2.
Fig. 5 B demonstration can be used for writing the capable signal of frame shown in Fig. 5 A and an exemplary sequential chart of column signal.
Fig. 6 A is the sectional view of a device shown in Figure 1.
Fig. 6 B is a sectional view of an alternate embodiment of an interferometric modulator.
Fig. 6 C is a sectional view of another alternate embodiment of an interferometric modulator.
Fig. 7 is the plan view from above of a demonstration one MEMS array.
Fig. 8 and 9 is the side view that shows the sectional view of the MEMS display device after encapsulating.
Figure 10 is a side view, and it shows the bending of the backboard of the MEMS display device after the encapsulation.
Figure 11 is the plan view from above of backboard shown in Figure 10.
Figure 12,14,16,18,20,22,24-26 are side view, and its demonstration has the sectional view of the MEMS display device after the encapsulation of various backsheet constructions.
Figure 13 A and 15 is respectively the skeleton view that shows the shape of used backboard among Figure 12 and 14.
Figure 13 B and 13C are the side view of a backboard, and it shows the manufacturing of backboard shown in Figure 12 and the 13A.
Figure 17 A-17C, 19,21 and 23 is respectively the face upwarding view that shows the reinforcement structure of used backboard among Figure 16,18,20 and 22.
Figure 27 is a process flow diagram, and it shows that one is used to make example process embodiment illustrated in fig. 26.
Figure 28 A and 28B are system block diagrams, and it shows that one comprises an embodiment of the visual display unit of a plurality of interferometric modulators.
Embodiment
Various reinforcement structures are formed on the backboard of MEMS device.Described reinforcement structure can strengthen the rigidity of backboard and prevent that thus backboard from contacting and damaging the MEMS element or the array of described device.Described reinforcement structure combines with backboard on one or two surface of backboard.Described backboard can form and variously improve its rigidity or reduce described backboard contacts the possibility of MEMS array when being subjected to external force structure.Described structure comprises that surface curvature, the backboard of backboard bending, backboard have variation in thickness of one or more grooves, backboard or the like.Can described reinforcement structure and various structure is combined, further to prevent when external force is applied to the backboard of MEMS device, the damaging MEMS array.
Below describe in detail and relate to some embodiments of the invention.But, the present invention can implement by being permitted different ways.In this explanation, can be with reference to accompanying drawing, in the accompanying drawings, identical parts use identical number-mark from start to finish.Find out easily that according to following explanation the present invention can implement in arbitrary configuration is used for the device of display image (no matter no matter is dynamic image (for example video) or still image (for example rest image), be character image or picture also).More specifically, the present invention can implement in numerous kinds of electronic installations below (but being not limited to) for example or be associated with these electronic installations: mobile phone, wireless device, personal digital assistant (PDA), handheld computer or portable computer, gps receiver/omniselector, camera, the MP3 player, camera, game machine, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example mileometer display etc.), driving cabin control device and/or display, camera scenery display (for example rear view cameras display of vehicle), electronic photo, electronics billboard or label, projector, building structure, packing and aesthetic structures (for example image display on jewelry).The MEMS device that has similar structures with MEMS device described herein also can be used for non-display application, for example is used for electronic switching device.
Show an interferometric modulator display embodiment who contains an interfere type MEMS display element among Fig. 1.In these devices, pixel is in bright state or dark state.Under bright (" opening (on) " or " opening (open) ") state, display element reflexes to the user with most of incident visible light.Be in dark (" closing (off) " or " closing (closed) ") state following time, display element reflects the incident visible light to the user hardly.Decide on different embodiment, can put upside down the light reflectance properties that " on " reaches " off " state.The MEMS pixel can be configured to mainly reflect under selected color, also can realize colored the demonstration except that black and white.
Fig. 1 is first-class axle figure, and it shows two adjacent pixels in a series of pixels of a visual displays, and wherein each pixel comprises a MEMS interferometric modulator.In certain embodiments, an interferometric modulator display comprises a row/column array that is made of these interferometric modulators.Each interferometric modulator comprises a pair of reflection horizon, and this is positioned to each other to have a variable-sized optical resonance cavity at a distance of a variable and controlled distance at least to form one to the reflection horizon.In one embodiment, one of them reflection horizon can be moved between the two positions.Be referred to herein as on the primary importance of release conditions, the local reflex layer that the position of this displaceable layers distance one is fixed is far away relatively.On the second place, the position of this displaceable layers is more closely near this local reflex layer.Decide position according to removable reflection horizon, from the incident light of this two layers reflection can with mutually long or mutually the mode of disappearing interfere, thereby form the mass reflex or the non-reflective state of each pixel.
The pixel array portion that shows in Fig. 1 comprises two adjacent interferometric modulator 12a and 12b.In the interferometric modulator 12a in left side, demonstration one movably high reflection layer 14a is in an off-position, and this off-position is apart from fixing local reflex layer 16a one preset distance.In the interferometric modulator 12b on right side, demonstration one movably high reflection layer 14b is in an excited target position, and this excited target position is near fixing local reflex layer 16b.
Fixed bed 16a, 16b conduct electricity, the part is transparent and local is reflectivity, and can the layer of one or more respectively do for oneself chromium and tin indium oxides be made by for example depositing on a transparent substrates 20.Described each layer is patterned into parallel band, and can form the column electrode in the display device, as further specifying hereinafter.Displaceable layers 14a, 14b can form by one or more depositing metal layers that is deposited on pillar 18 tops (and column electrode 16a, 16b quadrature) and and be deposited on the series of parallel band that the middle expendable material between the pillar 18 constitutes.After expendable material was etched, these deformable metal levels separated with the air gap 19 of the metal level of fixing by a regulation.These deformable layer can use one to have high conductivity and reflexive material (for example aluminium), and those bands can form the row electrode in the display device.
When not applying voltage, cavity 19 remains between a layer 14a, the 16a, and deformable layer is in the mechanical relaxed state shown in pixel 12a among Fig. 1.Yet after a selected row and column applies potential difference (PD), the capacitor that forms at the respective pixel place of described row and column electrode intersection is recharged, and electrostatic force pulls to these electrodes together.If voltage is enough high, then displaceable layers generation deformation, and be forced on the fixed bed (can on fixed bed, deposit a dielectric material (not shown in this Figure), preventing short circuit, and the control separation distance), shown in the pixel 12b on right side among Fig. 1.Regardless of the potential difference (PD) polarity that is applied, the behavior is all identical.This shows, may command reflection and row/row of non-reflective pixel state encourage to traditional LCD and other display techniques in used row/row encourage similar in many aspects.
Fig. 2 to Fig. 5 B shows the example process and the system that use an array of interferometric modulators in a display application.Fig. 2 is a system block diagram, and this figure shows that one can embody an embodiment of the electronic installation of each side of the present invention.In this exemplary embodiment, described electronic installation comprises a processor 21, and it can be any general purpose single-chip or multicore sheet microprocessor, for example ARM,
Pentium
Pro, 8051,
Or any special microprocessor, for example digital signal processor, microcontroller or programmable gate array.According to convention in the industry, processor 21 can be configured to carry out one or more software modules.Except that carrying out an operating system, also this processor can be configured to carry out one or more software applications, comprise web browser, telephony application, e-mail program or any other software application.
In one embodiment, processor 21 also is configured to communicate with an array controller 22.In one embodiment, this array control unit 22 comprises a horizontal drive circuit 24 and the column drive circuit 26 that signal is provided to a pel array 30.Array sectional view shown in Fig. 1 illustrates with line 1-1 in Fig. 2.For the MEMS interferometric modulator, described row/row excitation protocol can utilize the hysteresis property of these devices shown in Figure 3.It for example may need, and one 10 volts potential difference (PD) makes a displaceable layers be deformed into actuated state from release conditions.Yet, when described voltage when this value reduces, reduce when being back to below 10 volts at described voltage, described displaceable layers will keep its state.In the exemplary embodiment of Fig. 3, before voltage drop was low to moderate below 2 volts, displaceable layers can not discharge fully.Therefore, in example shown in Figure 3, exist one to be approximately the voltage range that 3-7 lies prostrate, exist one to apply voltage window in this voltage range, described device is stabilized in and discharges or actuated state in this window.Be referred to as " lag windwo " or " stability window " in this article.For an array of display with hysteresis characteristic shown in Figure 3, OK/the row excitation protocol can be designed to be expert at during the gating, the pixel that is energized is applied about 10 a volts voltage difference to selected in current, and to d/d pixel being applied one near 0 volt voltage difference.After gating, it is poor to apply about 5 a volts steady state voltage to pixel, and gating makes its residing any state so that its maintenance is expert at.After being written into, in this example, each pixel is all born a potential difference (PD) that is in the 3-7 volt " stability window ".This characteristic makes pixel design shown in Figure 1 be stabilized in an existing foment or release conditions under identical the voltage conditions that applies.Because each pixel of interferometric modulator, no matter be in foment or release conditions, in fact all be one by described fixed reflector and capacitor that mobile reflection horizon constituted, therefore, this steady state (SS) can be kept under the voltage in the lag windwo and consumed power hardly.If the current potential that is applied is constant, then there is not electric current to flow into pixel basically.
In the typical case uses, can be by determining that according to one group of desired actuated pixels in first row one group of row electrode forms a display frame.After this, a horizontal pulse is put on the electrode of the 1st row, thereby encourage the pixel corresponding with determined alignment.After this, determined one group of row electrode is become corresponding with desired one group of actuated pixels in second row.After this, with a pulse put on the 2nd the row electrode, thereby according to determined row electrode encourage the 2nd the row in respective pixel.The pixel of the 1st row is not subjected to the influence of the pulse of the 2nd row, thereby the state that keeps it to set at the impulse duration of the 1st row.The property mode repeats above-mentioned steps to the row of whole series in order, to form described frame.Usually, repeating this process continuously by the speed with a certain desired frame number/second to refresh and/or upgrade these frames with new video data.Also have a variety of row and the row electrodes that are used to drive pel array to be known by people, and can use with the present invention with the agreement that forms display frame.
Fig. 4,5A and Fig. 5 B show a kind of possible excitation protocol that is used for forming a display frame on 3 * 3 arrays shown in Figure 2.Fig. 4 shows one group of possible row and column voltage level of can be used for having the pixel of hysteresis curve shown in Figure 3.In the embodiment of Fig. 4, encourage a pixel to comprise and be set to-V being listed as accordingly
Bias, and will go accordingly and be set to+Δ V, it can correspond respectively to-5 volts and+5 volts.Discharging pixel then is to be set to+V by being listed as accordingly
BiasAnd will go accordingly and be set to identical+Δ V, form one 0 volts potential difference (PD) at described pixel two ends thus and realize.In the row of 0 volt of those wherein capable voltages maintenance, pixel is stable at its initial residing state, and is in+V with these row
BiasStill-V
BiasIrrelevant.
Fig. 5 B is the sequential chart of a series of row of demonstration and column signal, and those signals put on 3 * 3 arrays shown in Figure 2, and it will form the demonstration shown in Fig. 5 A and arrange that wherein actuated pixels is non-reflectivity.Before writing the frame shown in Fig. 5 A, pixel can be in any state, and in this example, all row all are in 0 volt, and all row all be in+5 volts.Under these institute's voltages that apply, all pixels are stable at its existing actuated state or release conditions.
In the frame shown in Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are encouraged.For realizing this effect, at the 1st delegation's time durations of going the 1st row and the 2nd row are set at-5 volts, the 3rd row are set at+5 volts.This can not change the state of any pixel, because all pixels all remain in the stability window of 3-7 volt.After this, rise to 5 volts of pulses that are back to 0 volt that descend again then by one from 0 volt and come gating the 1st row.Actuate pixel (1,1) and (1,2) and discharge pixel (1,3) thus.Other pixels in the array are all unaffected.For the 2nd row is set at desired state, the 2nd row are set at-5 volts, the 1st row and the 3rd row are set to+5 volts.After this, apply identical strobe pulse with actuate pixel (2,2) and discharge pixel (2,1) and (2,3) to the 2nd row.Equally, other pixels in the array are all unaffected.Similarly, by the 2nd row and the 3rd row are set at-5 volts, and be listed as the 1st be set at+5 volts to the 3rd capable the setting.The strobe pulse of the 3rd row is set at the state shown in Fig. 5 A with the 3rd row pixel.After writing incoming frame, the row current potential is 0, and the row current potential can remain on+5 or-5 volts, and after this display will be stable at the layout shown in Fig. 5 A.Should be appreciated that, can use identical programs the array that constitutes by tens of or hundreds of row and columns.The timing, order and the level that should also be clear that the voltage that is used to implement the row and column excitation can alter a great deal in above-described General Principle, and above-mentioned example only is exemplary, and any actuation voltage method all can be used with the present invention.
Detailed structure according to the interferometric modulator of above-mentioned principle operation can be ever-changing.For example, Fig. 6 A-6C shows three kinds of different embodiment of moving lens structure.Fig. 6 A is a sectional view embodiment illustrated in fig. 1, wherein deposition one strip of metal material 14 on the support member 18 that quadrature extends.In Fig. 6 B, movably reflecting material 14 only is on the tethers 32 at corner and is attached to support member.In Fig. 6 C, movably reflecting material 14 is suspended on the deformable layer 34.Because the structural design and the material therefor of reflecting material 14 can be optimized aspect optical characteristics, and the structural design of deformable layer 34 and material therefor can be optimized aspect the desired mechanical property, so this embodiment has some advantages.In many open files, comprise in the open application case of (for example) No. 2004/0051929 U.S., the manufacturing of various dissimilar interference devices has been described.Can use the known technology of a variety of people to make said structure, this comprises a series of material depositions, patterning and etching step.
Fig. 7 shows that one is formed at an embodiment of the MEMS array 111 on the substrate 101.MEMS array 111 is made of the some MEMS elements that are arranged on the substrate 101.Each MEMS element 103,105,107 is all corresponding to interferometric modulator 12a or 12b.In the embodiment shown, the MEMS element is regularly arranged basically.Dotted line is represented the arrangement of MEMS element.In one embodiment, the MEMS element in the array 111 has essentially identical size.In another embodiment, the MEMS element of MEMS array 111 can be of different sizes.As shown in the amplifier section of MEMS array 111, for example, element 103 and 105 is to be defined by four (4) individual adjacent pillars 18 to form, and element 107 is to be defined by six (6) individual adjacent pillars 18 to form.Although in the embodiment shown, pillar 18 is regularly arranged with essentially identical spacing, yet the spacing between the position of pillar 18 and the pillar 18 that each is adjacent can change to some extent.
Fig. 8 shows the typical package structure of a MEMS device 100.As shown in Figure 7, MEMS array 111 is formed on the substrate 101.The work of MEMS array 111 can make image or information be shown on the bottom surface 109 of substrate 101.One backboard 121 is arranged at the top face of MEMS array 111 but does not directly contact the end face of MEMS array 111, and is supported by a sealing or a jointing material 123 that extends around its periphery.Sealing or jointing material 123 are bonded together backboard 121 and substrate 101.
In certain embodiments, the MEMS device 100 after the encapsulation comprises that one is configured to reduce the drying agent (not shown) of the moisture content in the cavity 124.The those skilled in the art will know that for the encapsulation of airtight sealing, drying agent is also nonessential, but can desirably control the moisture content that remains in the encapsulation.In one embodiment, drying agent is between MEMS array 111 and backboard 121.The encapsulation that drying agent both can be used for having airtight sealing also can be used for having the encapsulation of non-airtight sealing.In the encapsulation with airtight sealing, drying agent is generally used for controlling the moisture content that remains in encapsulation inside.In the encapsulation with non-airtight sealing, drying agent can be used for controlling the moisture content that enters in the encapsulation in environment.Generally speaking, but any trapping moisture content and can not disturb the material of the optical property of interferometric modulator array all to can be used as drying agent.Suitable desiccant material includes but not limited to zeolite, molecular sieve, surface adsorption agent, body adsorbent, reaches chemical reactor.
Drying agent can have different forms, shape and size.Except being the solid form, drying agent also can be powder type.These powder can directly be inserted in the encapsulation, and perhaps it can mix mutually with a sticker and applies.In an alternate embodiment, drying agent can form different shape, for example cylindrical or thin slice shape before putting on encapsulation inside.
Be understood by those skilled in the art that drying agent can apply by different modes.In one embodiment, drying agent deposits as the part of MEMS array 111.In another embodiment, drying agent is to be coated on encapsulation 100 inside as a spraying or dip-coating coating.
Above can be, substrate 101 can form the translucent or transparency material of film, MEMS device.These transparency materials include but not limited to glass, plastics and transparent polymer.MEMS array 111 can comprise the film modulator of separable type.Be understood by those skilled in the art that backboard 121 can be made by arbitrary suitable material, for example make by glass, metal, paper tinsel, polymkeric substance, plastics, pottery or semiconductor material (for example silicon).
Encapsulation process can be in a vacuum, vacuum until and comprise under the pressure of environmental pressure or be higher than under the pressure of environmental pressure and realize.Encapsulation process also can be in seal process change and controlled high pressure or low-pressure environment in realize.In the environment of bone dry MEMS array 111 being encapsulated may be comparatively favourable, but and nonessential like this.Similarly, packaging environment can be the inert gas that is under the environmental baseline.Encapsulate the diversity that can reduce the technology cost and more may realize choice of equipment under environmental baseline, this is the operation that can not influence device under environmental baseline because device can transport.
Generally speaking, expectation makes the water vapor that infiltrates through in the encapsulating structure minimized, controls the environment in the MEMS device 100 thus, and it is carried out airtight sealing keeps constant to guarantee described environment.When the humidity in the encapsulation surpassed a certain content, the surface tension that causes because of moisture content became and is higher than the restoring force of displaceable element in the interferometric modulator 10 (not shown), thereby displaceable element may become permanent viscous extremely on the described surface.If moisture content is low excessively, then when displaceable element contacted with the surface that has applied, moisture content can be charged to the polarity identical with displaceable element.
As indicated above, can use drying agent to control to retain in the moisture content in the MEMS device 100.Yet, prevent that by making up an airtight sealing moisture content from entering MEMS device 100 inside in atmosphere, can reduce needed drying agent or need not to use drying agent.
The continuing of sized display reduced to limit the method that is available for the environment in the management and control MEMS device 100, and this is to diminish because be used to place the zone of drying agent in MEMS device 100.Because need not to use drying agent, thereby also can make 100 attenuation of MEMS device, this is that people are desired in certain embodiments.Usually, in the encapsulation that contains drying agent, the expected life of packaged device can be depending on the life-span of drying agent.When drying agent exhausted fully, along with having abundant moisture content to enter encapsulating structure and interferometric modulator array being caused damage, interferometric devices may lose efficacy.
Fig. 9 is presented at another embodiment of encapsulation used in the MEMS device 100, and its dorsulum 121 has a protrusion 125, for example a flange along its edge.Protrusion 125 is connected to substrate 101 by jointing material 123.By using this protrusion of backboard 121, can be between backboard 121 and MEMS array 111 desired space or the gap 124 of formation, reduce simultaneously to seal or the necessary thickness of jointing material 123.The backboard with flange protrusions thing 125 121 shown in the figure can be made by molded or the processing that is shaped.Another is chosen as, and a structure that forms flange protrusions thing 125 can be attached to described plate along the edge of the plate (not shown) of a substantially flat, thereby form the structure of backboard shown in Figure 9 121.One be chosen as again, also can form backboard 121 in the following way: on the surface of a flat board, make a groove, wherein carve a central area of removing described surface, thereby form protrusion 125 along its edge with flange protrusions thing 125.Also can in flat backboard 121, make more than a groove.As hereinafter institute's argumentation in detail, this has the effect (Figure 16-24) of making rib or strengthening structure in backboard.Herein, described rib or reinforcement structure can form at other local grooves that form by the original material that keeps backboard 121 in some zone.
Preferablely make backboard 121 be assembled to MEMS device 100 and between MEMS array 111 and backboard 121, have gap 124.Yet, also can have gapless structure (not shown).Gap 124 can provide some protection to prevent to put on the damage MEMS array 111 on the backboard 121.As shown in figure 10, backboard 121 will be by crooked in gap 124 and not contact or only contact slightly MEMS array 111 and absorb this power that applies in the above.Thereby external force can't be passed to MEMS array 111, and perhaps only a part of external force can be passed to MEMS array 111.Gap 124 is big more, and is good more to the protection of MEMS array 111.The size in gap 124 can be by regulating sealing or jointing material 123 thickness or highly control.In addition, the size in gap 124 can be controlled by the thickness of adjusting flange protrusions thing 125 and/or the degree of depth of above-mentioned groove.
Although gap 124 can as indicated abovely be protected MEMS device 100, yet be not always that expectation has big gap, because this can cause the general thickness of MEMS device 100 to increase.Further, in MEMS display device, between MEMS array 111 and backboard 121, form gap 124 and can not protect MEMS array 111 to avoid damaging effectively with a big viewing area.Referring to Figure 11, especially in the display with big viewing area, the central area 126 of backboard 201 is away from the sealing/jointing material 123 that is used to keep the distance between substrate 101 and the backboard 201 thereby keeps the size in gap 124.In the packaging structure shown in Fig. 8-10, there is not support structure to keep the size (Figure 11) in the gap 124 in the central area 126 of backboard 121.Thereby the external force that is applied on the central area 126 will more likely be passed to MEMS array 111 than other regional external force that are applied near sealing/jointing material 123.
Figure 12 shows another embodiment of the MEMS device 100 with a crooked backboard 121a.In the embodiment shown, crooked backboard 121a covers MEMS array 111 and outwardly-bent away from MEMS array 111.Thereby crooked backboard 121a provides a member that covers MEMS array 111.As hereinafter will discussing in detail, the structure of this bending will provide a bigger gap 124 between MEMS array 111 and backboard 121a, especially true in the central area 126 of backboard 121a (Figure 11).In addition, the structure of this bending will strengthen the rigidity of backboard 121a.For the flat board of a same thickness, the rigidity of this kind enhancing can make the deflection under specified load reduce.
In the embodiment shown in fig. 12, in whole gap 124, the degree of depth in gap 124 can be greater than MEMS device shown in Figure 8.Term " degree of depth in gap 124 " is meant the distance between the inside surface of the end face of MEMS array 111 and backboard 121a.Further, backboard 121a bend be configured in backboard 121a and be subjected to external force the time deflection diminish.Because the gap depth of backboard 121a becomes big and rigidity strengthens, thereby the MEMS array in the present embodiment 111 is than the contact and the damage that more are not vulnerable to external force under flat backboard embodiment situation shown in Figure 8.Thereby the structure of this kind bending provides a kind of backboard that prevents directly to contact the member of MEMS array 111 and also provide a kind of possibility of this kind contact that makes to reduce or minimized member.
In addition, in the structure of the bending of backboard 121a, the degree of depth of gap 124 in the central area is greater than the degree of depth in other zones of backboard.Even in big display, the external force that is applied on the central area 126 also may not more easily be passed to MEMS array 111 than the power that is applied on other zones 130 therefore.Thereby, will be than under flat backboard 121 embodiment situations shown in Figure 8, being subjected to avoiding the protection that external force or external pressure are damaged better in the MEMS array 111 corresponding to the zone of the central area 126 of backboard 121a.
The skeleton view that in Figure 13 A, shows crooked backboard 121a.Although in the embodiment shown, only 133 bendings of backboard 121a along the edge, however they also can 135 bendings along the edge.Backboard 121a is along among the embodiment of two edges 133 and 135 bendings therein, and 133 and 135 radius-of-curvature can be identical along the edge.At this moment, backboard 121a will constitute the part of spherical shell in fact.In another embodiment, 133 and 135 radius-of-curvature can differ from one another along the edge.
In an embodiment of the present invention, the bend mode of backboard 121a can make radius-of-curvature (R) on the sweep of backboard 121a invariable or change.In another embodiment, Wan Qu backboard 121a can comprise a flat part.No matter radius-of-curvature (R) changes or is invariable, all is to about 5000mm from (for example) about 50mm.Preferably, radius-of-curvature is chosen to from about 100mm to about 700mm.The thickness of backboard 121a is from about 0.1mm
To about 5.0mm, it is not limited only to this certainly.Preferably, described thickness is from about 0.4mm about 1.5mm extremely.The those skilled in the art can consider the properties of materials that is used for backboard 121a and regulate suitable thickness in described thickness range.
Crooked backboard 121a can be made by numerous kinds of materials.For example, the material of backboard 121a can be steel alloy, comprise stainless steel alloy, metal, metal alloy, glass, polymkeric substance, metal or semiconductor material oxide, the pottery or the like.Preferably, described material be selected from those its thermal expansivity with above make the material that the substrate 101 of MEMS array 111 is complementary.The example of this material comprises KOVAR
Alloy, it is a kind of ferroalloy that comprises Ni and Co as main alloy element.
Crooked backboard 121a can make by various methods.In one embodiment, for example, make a smooth substantially thin plate bear warpage or stress and produce crooked backboard 121a.Described smooth substantially thin plate can pass through sheet moulding or drawing.In another embodiment shown in Figure 13 B and the 13C, a smooth substantially plate 136 that for example has two layers 137 and 139 that formed by different materials is heated.These two layers 137 and two kinds of materials of 139 have different thermal responses, for example different thermal expansions or shrinkage factor.Dull and stereotyped 136 heating meetings are produced the structure of bending because of the different thermal responses of the material in the layer 137 and 139.In another embodiment, dull and stereotyped 136 can comprise more than two layers.
In certain embodiments, can in the assembling process of MEMS device 100, make backboard 121a.In one embodiment, shown in Fig. 8 or 9, construct the heat-setting material 123 that a substrate 101, dull and stereotyped 136 and is used for the periphery sealing.This is the configured intermediate of device 100 in assembling process.When to the heating of this intermediate product so that during described heat-setting material cured, dull and stereotyped 136 can produce the structure of a bending because of the different thermal responses of layer 137 and 139 (Figure 13 B and 13C).In this process, when seal 123 is solidifying, form sweep, and since backboard 123 and substrate 101 with solidify after seal 123 firmly combine, even thereby after this structure is cooled to room temperature, described sweep still keeps existing.
In other embodiments, to have two or more flat boards with different heat expansion coefficient 136 opposite with use, can make backboard 121a form the structure of a bending by using a flat board with single thermal expansivity.The single thermal expansivity of described back veneer material can be different from the thermal expansivity of substrate 101.Preferably, the thermal expansivity of described back veneer material is less than the thermal expansivity of substrate 101.Embodiment as indicated above is general, and the configured intermediate in the assembling process is shown in Fig. 8 or 9, and just the sealing 123 that is formed by the thermal curable material is still uncured.This device is heated to a temperature a little less than the solidification temperature of thermal curable material, and this will make the material of backboard 121a and substrate 101 expand and can firmly not be bonded to encapsulant.Then, make environment temperature be increased to solidification temperature, combine with the flat board of substrate 101, encapsulant 123 and backboard 121a firmly thereby encapsulant is solidified also.The device that will combine is cooled to room temperature then.Owing to have coefficient of thermal expansion differences, thereby the contraction of the material of backboard (flat board) is less than substrate 101.Because substrate 101 combines firmly with flat board, thereby the bigger contraction of substrate 101 will produce stress in flat board, and this will make plate deformation become as shown in figure 12 curved configuration.
In another embodiment, the middle device in the assembling process is configured to shown in Fig. 8 or 9, wherein seal 123 is one can be by the material of ultraviolet light polymerization, and it seals the periphery of device but full solidification not as yet basically.This device is placed a Room, and a pressure that is lower than the internal pressure of middle device is born in this chamber.Because described can basically the periphery of device the sealing by the material of ultraviolet light polymerization, thereby the outside pressure of device will can not influence the device pressure inside basically.Outside this lower pressure with respect to inside of device will make flat board (Fig. 8 or 9) to excurvation or bending.Then, by can be by the material full solidification of ultraviolet light polymerization to applying that ultraviolet light makes by the material of ultraviolet light polymerization, thus the sweep of stationary backplate.The those skilled in the art will know the proper method that can be used for making backboard 121a.
Figure 14 and 15 shows another embodiment of backboard 121b of the present invention.In this embodiment, backboard 121b along the edge 133 thickness with variation.Backboard 121b with thickness of variation provides a kind of member that is used to cover MEMS array 111.Thickness in the zone line is greater than the thickness of 133 the zone line both sides along the edge.In the embodiment shown, the inside surface 129 of facing MEMS array 111 forms a smooth substantially structure, and the opposed outer surface 130 of backboard 121b is protuberance then.An end of 133 increases the thickness of backboard 121b gradually from the edge, and 133 the other end reduces gradually towards the edge then.Preferably, the thickness of backboard 121b is that about 0.1mm is more preferred from from about 0.4mm to about 1.5mm to about 5mm certainly.The thickness along these two ends (the thinnest part) at described edge of backboard 121b is preferably from about 0.1mm to about 3.0mm, is more preferred from oneself about 0.2mm to about 1.5mm.The thickness at the center of backboard 121b (thick) is preferably certainly, and about 0.4mm is more preferred from from about 0.4mm to about 3mm to about 5mm.Backboard 121b and the thickness that each is regional thereof can be not limited to above-mentioned scope.The those skilled in the art can consider backboard 121b material character and design the suitable thickness in backboard 121b and each zone thereof.
In the embodiment shown in Figure 14 and 15, if every other condition is all identical, then the degree of depth in gap 124 is with embodiment illustrated in fig. 8 approximately identical.In addition, the degree of depth of the intermediate gap, central area 124 of backboard 121b is approximately identical with the degree of depth of other regional intermediate gaps 124 of this backboard 121b.Yet the structure with thicker zone line can strengthen the rigidity of backboard 121b, especially zone line.133 rigidity strengthens because zone line is along the edge, thereby compares with embodiment illustrated in fig. 8, and backboard 121b more is not vulnerable to the face that is applied thereto, especially puts on the external force in the central area 126 or the influence of external pressure.Thereby the structure with variable thickness provides a kind of and is used to prevent that backboard from directly contacting the member of MEMS array 111, and also provides a kind of possibility of this kind contact that makes to reduce or minimized member.
In some embodiment (not shown), but the thickness linear change of backboard 121b or step change.In other embodiments, back plate thickness can change along another edge 135, and wherein said thickness can gradually change or step changes.In other (not shown) embodiment, inside surface 129 is towards MEMS array 111 protuberances, and outside surface 130 keeps smooth substantially.In an embodiment (not shown) again, the two is remotely crooked mutually for inside surface 129 and outside surface 130.In this kind embodiment, the ultimate range between inside surface and the outside surface is positioned at the center of backboard.In another embodiment, inside surface 129 is the same with outside surface 130 the two image pattern 12 illustrated embodiment crooked, and the thickness of backboard is along the edge 133 or 133 and 135 the two variation along the edge simultaneously.
In certain embodiments, backboard 121b shown in Figure 15 can have one or more grooves (not shown) that are formed on its inside surface 129.Backboard with one or more grooves can provide a member that is used to cover MEMS array 111.In addition, described one or more groove can be provided for preventing that backboard 111 from directly contacting the member of MEMS array or being used to make the possibility of this kind contact to reduce or minimized member.For example, described one or more groove can be formed on the central area of backboard 121b.In this kind structure, the degree of depth in the gap 124 in the central area 126 can be greater than the degree of depth in other zones.In one embodiment, described one or more groove can be configured to be beneficial to and keep adsorbent therein.In another embodiment, as further discussing with reference to Figure 16-26, the generation type of a plurality of grooves makes the partition wall of described a plurality of grooves work the function of strengthening structure or rib, and this can increase the rigidity of backboard.Can form described one or more groove by some material that removes among the backboard 121b with groove.
Other exemplary embodiment of backboard during Figure 16-26 is presented at MEMS array 111 encapsulated, it is labeled as 121c, 121d, 121e, 121f, 121g, 121h and 121i respectively.Backboard 121c, 121d, 121e and 121f (Figure 16-23) are the form through strengthening of backboard 121a shown in Figure 12.The all changes form of backboard 121a all can be further strengthened as the further described mode of reference Figure 16-23.In addition, backboard 121b (Figure 14 and 15) and version thereof also can be strengthened by same mode.And all these devices and version thereof all can be with combined above with reference to the described flange protrusions thing of the embodiment among Fig. 9 body.These have the backboard of strengthening structure provides a kind of member that is used to cover MEMS array 111.In addition, as hereinafter describing in detail, these strengthen structure provides a kind of being used to prevent the member of backboard contact MEMS array 111 or be used to make the possibility of this kind contact to reduce or minimized member.
Referring to Figure 16-23, backboard 121c, 121d, 121e and 121f have reinforcement structure or rib 127a, 127b and/or the 127c that is formed on its inside surface.In the embodiment shown in Figure 16 and 17, strengthen edge 133 and 135 extensions that structure or rib 127a and 127b are basically parallel to backboard 127c respectively.Referring to Figure 17 A and 17B, strengthen structure 127a and 127b and intersect mutually in about center of backboard 121c.Shown in Figure 17 A, strengthen structure 127a and 127b and only in the part of backboard 121c, extend.Another is chosen as, and shown in Figure 17 B, strengthening structure 127a and 127b can extend to opposed edges from the edge of backboard 121c.Wherein be provided with among the embodiment of flange protrusions thing 125 (referring to Fig. 9) one, but the part that two opposed edges along backboard 121c of reinforcement structure 127a and 127b connection bump thing 125 are located.Referring to Figure 17 C, a plurality of reinforcement structure 127a and 127b intersect mutually and form a lattice structure.In these reinforcement structures some can extend to opposed edges from the edge of backboard 121c, and other reinforcement structures then can not.Strengthening quantity and the variable densityization of structure 127a and 127b also can be regulated according to other design factors.
In the embodiment shown in Figure 18 and 19, strengthen structure and rib 127a and 127b and also intersect mutually in about center of backboard 121d.Yet, strengthen structure 127a and 127b and upward extend generally along the diagonal of backboard 121d at the planimetric map (Figure 19) of its backboard 121d.Although do not show among the figure, yet the structure along diagonal of backboard 121d can have version, for example extend to the edge of backboard 121d and the lattice structure as shown in Figure 17 B and 17C.Similarly version applicable to mentioned above and hereinafter other embodiment of the reinforcement structure that will set forth.
In backboard 121c and 121d (Figure 16-19), the surface in the face of MEMS array 111 of strengthening structure 127a (or 127a and 127b the two) is smooth basically.Correspondingly, the thickness of strengthening structure 127a (or 127a and 127b the two) changes along with the bending of the inside surface 129 of backboard 121c and 121d.More specifically, strengthen structure 127a and the thickness of 127b in the central area of backboard 121c and 121d greater than the thickness in its neighboring area.In other embodiments, regardless of the sweep of the inside surface of backboard, the thickness of strengthening structure 127a and/or 127b all can change.In other embodiments, described thickness can be in whole reinforcement structure 127a and/or 127b substantially constant constant.
In the backboard 121e shown in Figure 20 and 21, to the extra reinforcement structure 127 of structure increase of backboard 121d (Figure 19).The reinforcement structure 127c that is increased is generally and is connected to the donut that other strengthen structure 127a and 127b.Strengthening structure 127c is formed in the central area of backboard 121e substantially.Except that donut, the reinforcement structure 127c that connects other structures 127a and 127b can be other forms arbitrarily, comprises mesh grid (not shown).The reinforcement structure 127c that can be used to connect to the structure increase of backboard 121c and 121d (Figure 17 and 18).
In the backboard 121f shown in Figure 22 and 23, protrusion or distance piece 131 are formed on the reinforcement structure 127a and 127b of structure of backboard 121c (Figure 17) or 121d (Figure 18).Protrusion or distance piece 131 can make the power that originally may be applied in the MEMS array 111 on the little concentrated area be disseminated to a plurality of positions, reduce the influence of these power to MEMS array 111 thus.In the embodiment shown, protrusion or distance piece 131 are arranged on the whole surface of strengthening structure 127a and 127b usually regularly.Protrusion or distance piece 131 can different density intersperse among on each zone of being defined.Protrusion or distance piece 131 can both can have identical height also can have different height.Form similar protrusion or distance piece 131 on reinforcement structure 127a, the 127b of all or some part that can be in backboard 121c-121e and/or the 127c.In addition, can on the inside surface 129 of backboard 121a-121b, form protrusion or distance piece 131.
In another embodiment, the formation of protrusion or distance piece 131 or locator meams make it only contact the predetermined part of MEMS array 111 when having external force to be applied to backboard.In this embodiment, external force only is passed to the described predetermined portions of MEMS array basically.Preferably, even described predetermined portions is the part that also can not influence the operation of MEMS device in the MEMS array when being damaged.In addition or another be chosen as, described predetermined portions is the part that is not vulnerable to damage in the MEMS array.In another embodiment, protrusion or distance piece 131 can only be formed in some zone, for example are formed in the central area of backboard 121f.Discuss as mentioned, protrusion or distance piece 131 provide a kind of and are used to prevent that backboard from directly contacting the member of MEMS array 111.In addition, protrusion or distance piece 131 provide a kind of be used to make member that the power that is applied to backboard scatters and/or a kind of member that is used to minimize or prevent to the damage of MEMS array.
Referring to Figure 24, the shaped slightly of backboard 121g is different from the shape of backboard 121 and 121a-121f.Backboard 121g ratio in the central area is thin in its neighboring area 130.This shape is combined with reinforcement structure 127a, 127b and 127c.
Although backboard 121g self can be more submissive in the central area than in the neighboring area, yet reinforcement structure 127a and 127b can increase the rigidity of backboard 121g, and can prevent that backboard 121g is easily towards 111 bendings of MEMS array.The reinforcement structure of any other form all can be used in this kind structure of backboard 121g.Equally, can increase protrusion or the distance piece 131 shown in Figure 22 and 23 to this kind structure.
Figure 25 shows that one has the MEMS device of a smooth substantially backboard 121h, and backboard 121h is combined with and strengthens structure 127a and 127b.In whole back plate 121h, do not have essentially identical thickness with the backboard 121h that strengthens structure 127a and 127b.In the present embodiment, owing to strengthen the thickness of structure 127a and 127b, the degree of depth in the gap 124 in the central area of backboard 121h can be less than the degree of depth of intermediate gap, neighboring area 124.Yet, strengthen structure 127a and 127b and can increase the rigidity of backboard 121g, and can prevent backboard 121g contact MEMS array 111.Backboard 121h also can have as shown in Figure 9 a flange protrusions thing 125.In this kind structure of backboard 121, can use the reinforcement structure of any other form.Equally, also can in this kind structure, increase protrusion shown in Figure 22 and 23 or distance piece 131.
The reinforcement structure of backboard 121c, 121d, 121e, 121f, 121g or 121h and/or distance piece can be formed on the intermediate structure of backboard.In one embodiment, for example, described intermediate structure comprises the backboard that is not formed with any reinforcement structure above.On the surface of middle backboard 121a, promptly can form backboard 121c, 121d, 121e, 121f or 121g with strengthening the structure attaching.In the backsheet constructions of bending, strengthening structure can be attached to described plate or thin plate before making a smooth substantially plate or thin plate bending or after crooked.Another is chosen as, and a part that can be used as the manufacture process of backboard 121c, 121d, 121e, 121f, 121g or 121h is made reinforcement structure and/or distance piece.In one embodiment, for example, a blank is carried out machine work, stay the material in other zones to remove some material in some zone, have the backboard of strengthening structure and/or distance piece thereby form.In another embodiment, for example, having the backboard of strengthening structure and/or distance piece is to make by molded or the processing that is shaped.The those skilled in the art will know the method that is available for making backboard, strengthens structure and/or distance piece.Can use to be used to make the method for strengthening structure and distance piece in the method for making flange protrusions thing 125, vice versa.
The material that is used for above-mentioned reinforcement structure for example for the oxide of polymkeric substance, glass, pottery, metal, metal or semiconductor material, spin-coating glass, frit, can be by the polymkeric substance of light patternization, contain polymkeric substance of drying agent or the like.Strengthening structure can be by making with top backboard 121,121a or the 121b identical materials of strengthening structure of being formed with.The material of protrusion for example for the oxide of polymkeric substance, glass, pottery, metal, metal or semiconductor material, spin-coating glass, frit, can be by the polymkeric substance of light patternization, contain polymkeric substance of drying agent or the like.Preferably, strengthen structure by making with top reinforcement structure 127a, 127b and/or the 121c identical materials that is formed with protrusion.
Strengthening structure and protrusion can only be made of one or more drying agent, perhaps by one or more drying agent and one or more for example polymkeric substance etc. structured material is combined constitutes.Use drying agent formation reinforcement structure will be eliminated or reduce exceptional space that is used for drying agent and/or container required in the encapsulation of display at least, controls the true(-)running of guaranteeing MEMS mechanism because display need have humidity.Can use any drying agent mentioned above.Preferably, drying agent applicatory comprises molecular sieve, calcium oxide, zeolite and the carbon nano-tube of aluminium complex for (for example).The those skilled in the art will know the kind and the quantity of structured material under the situation of selecting drying agent in strengthening structure and/or protrusion for use.
Figure 26 shows a MEMS device, and this MEMS device has one and is combined with the film backboard 121i that strengthens structure 127d and 127e.In one embodiment, the thickness of film backboard 121i is to about 100 μ m from about 10 μ m.The structure of illustrated embodiment is similar to embodiment shown in Figure 25, and just the peripheral part 141 of film backboard 12li directly deposits (no seal 123) on the surface that is not formed with MEMS array 111 of substrate 101.Although not shown, yet between the peripheral part 141 of film backboard 121i and substrate 101, can accompany one or more middle layers.In the embodiment shown, peripheral part 141 preferable depositions with core backboard 121i form with being integral.Strengthen structure 127d and 127e and can be different shape.Although not shown, yet can increase the protrusion 131 shown in Figure 22 and 23 to this kind structure.
Hereinafter further specify embodiment shown in Figure 26 with reference to exemplary process process flow diagram shown in Figure 27.According to the difference of embodiment, can add additional step and/or delete some existing step, remaining step remains unchanged simultaneously.In step S2701, on substrate 101, make MEMS array 111.Next in step S2703, on MEMS array 111, form a sacrifice layer (not shown).Sacrifice layer can be made by the material that for example (for example) molybdenum (Mo), silicon (Si), tungsten (W) or titanium (Ti) etc. can be discharged afterwards.In one embodiment, sacrifice layer is to be made by materials such as (for example) polymkeric substance, spin-coating glass or oxides.The those skilled in the art will know that described sacrifice layer can be deposited into desired thickness.The thickness of described sacrifice layer should be enough to partitioned film backboard 121i and MEMS array 111.In one embodiment, sacrifice layer is deposited into one between about 1000
Thickness to 10 mu m ranges more preferably is deposited into one between about 1000
Thickness to 1 mu m range.
Proceed to step S2705, use the photoetching technique patterning and optionally etch away described sacrifice layer, to form groove (not shown).The groove that is formed in the sacrifice layer is strengthened structure 127d and 127e as a negative film to make therein.Described groove forms is enough to form the degree of depth and the shape of strengthening structure 127d and 127e.Then, in step S2707, the groove filling is formed reinforcement structure 127d and 127e with a material.Strengthen the material that structure 127d and 127e can be arbitrary type, include but not limited to semiconductor, metal, alloy, polymkeric substance or plastics and compound substance.Continue to step S2709, comprising substrate 101, sacrifice layer and be filled with deposition one film backboard 121i on the total of groove of the material of strengthening structure 127d and 127e then.In certain embodiments, what film backboard 121i can be any type has watertightness or a hydrophobic material, includes but not limited to the metal and the paper tinsel of nickel, aluminium and other types.Described film also can be formed by insulator, includes but not limited to silicon dioxide, aluminium oxide or nitride.Another is chosen as, and described film can be made by the material of porous.The material of suitable porous for example comprises polymkeric substance and organic or inorganic spin-coating glass (SOG) section bar material such as (for example) PMMA, epoxy.In certain embodiments, film backboard 121i can be made by identical materials with reinforcement structure 127d and 127e.
Next in step S2711,121i carries out patterning and etching to the film backboard, to form the opening that at least one passes backboard 121i.Can further carry out patterning and processing to film backboard 121i, to realize with the electrical connection of the miscellaneous part of MEMS array 111 and described device and to contact.Continue to step S2713, optionally remove the sacrifice layer between MEMS array 111 and backboard 121i and/or reinforcement structure 127d and 127e.Form gap 124 in the place that sacrifice layer is removed.Provide an etchant by the opening that is formed among the film backboard 121i.When reacting, promptly can optionally etch away described sacrifice layer when the etchant contact and with exposing of sacrifice layer is regional.For example, for removing the sacrifice layer that forms by molybdenum (Mo), silicon (Si), tungsten (W) or titanium (Ti), can introduce xenon difluoride (XeF to the inside of MEMS device by described at least one opening
2).After removing sacrifice layer and forming gap 124, the opening among the film backboard 121i is sealed.The technician of semiconductor processes or field of lithography will know process as herein described and determine that suitable parameters makes and have the backboard 121i that strengthens structure 127d and 127e.
In the above-described embodiments, particularly in the embodiment shown in Figure 16-26, the inside surface of strengthening structure and backboard forms cavity or groove.Described cavity or grooved area are to be formed by the wall or the delimited that are formed at the reinforcement structure on the backboard.In certain embodiments, part or all filling of described cavity or groove can absorb the drying agent of hydrone contained in the display device with one or more.The drying agent that is contained in described cavity or the grooved area can further structural strength and the rigidity of strengthening backboard.Figure 12-15 illustrated embodiment also can be held drying agent by form one deck drying agent on the inside surface 129 of backboard 121a, 121b (not shown).Another is chosen as, and can form a container that is used to hold drying agent on the inside surface of backboard.
Figure 28 A and 28B are the system block diagrams of an embodiment of demonstration one display device 2040.Display device 2040 for example can be cellular phone or mobile phone.Yet the form that the same components of display device 2040 or its do to change slightly also can be used as for example illustration of all kinds such as TV and portable electronic device display device.
The display 2030 of exemplary display device 2040 can be any in the numerous kinds of displays, comprises bi-stable display as herein described.In other embodiments, display 2030 comprises flat-panel monitors such as plasma scope for example mentioned above, EL, OLED, STN LCD or TFT LCD or non-tablet display such as CRT or other tubular devices for example, and these displays are known by the those skilled in the art.Yet for ease of the explanation present embodiment, display 2030 comprises just like interferometric modulator display as herein described.
The assembly that in Figure 28 B, schematically shows an embodiment of exemplary display device 2040.Example illustrated display device 2040 comprises a shell 2041, and can comprise that other are closed in assembly wherein at least in part.For example, in one embodiment, exemplary display device 2040 comprises a network interface 2027, and this network interface 2027 comprises that one is coupled to the antenna 2043 of a transceiver 2047.Transceiver 2047 is connected to processor 2021, and processor 2021 is connected to again regulates hardware 2052.Regulating hardware 2052 can be configured to a signal is regulated (for example a signal being carried out filtering).Regulate hardware 2052 and be connected to a loudspeaker 2045 and a microphone 2046.Processor 2021 also is connected to an input media 2048 and a driving governor 2029.Driving governor 2029 is coupled to one frame buffer 2028 and is coupled to array driver 2022, and array driver 2022 is coupled to an array of display 2030 again.One power supply 2050 is all component power supply according to the designing requirement of particular exemplary display device 2040.
Network interface 2027 comprises antenna 2043 and transceiver 2047, so that exemplary display device 2040 can communicate by network and one or more device.In one embodiment, network interface 2027 also can have some processing power, to reduce the requirement to processor 2021.Antenna 2043 is to launch being used to known to the those skilled in the art and any antenna of received signal.In one embodiment, this antenna is launched according to IEEE802.11 standard (comprising IEEE 802.11 (a), (b), or (g)) and is received the RF signal.In another embodiment, this antenna is launched according to bluetooth (BLUETOOTH) standard and is received the RF signal.If be cellular phone, then this antenna is designed to receive CDMA, GSM, AMPS or other and is used for the known signal that communicates at the mobile phone network.2047 pairs of signals that receive from antenna 2043 of transceiver carry out pre-service, so that it can be received and further be handled by processor 2021.Transceiver 2047 is also handled the signal that self processor 2021 receives, so that they can be by antenna 2043 from exemplary display device 2040 emissions.
In an alternate embodiment, can replace transceiver 2047 by a receiver.In another alternate embodiment, can replace network interface 2027 by an image source, this image source can store or produce and send out the view data of delivering to processor 2021.For example, this image source can be one and contains the software module that the digital video disk (DVD) of view data or hard disk drive or produce view data.
The overall operation of processor 2021 common control examples display device 2040.Processor 2021 automatic network interfaces 2027 or an image source receive data (for example Ya Suo view data), and this data processing is become raw image data or is processed into a kind of form that is easy to be processed into raw image data.Then, the data after processor 2021 will be handled are sent to driving governor 2029 or are sent to frame buffer 2028 and store.Raw data typically refers to the information that can discern the picture characteristics of each position in the image.For example, described picture characteristics can comprise color, saturation degree and gray level.
In one embodiment, processor 2021 comprises a microcontroller, CPU or is used for the logical block of the operation of control examples display device 2040.Regulating hardware 2052 generally includes and is used for sending signals and being used for amplifier and wave filter from microphone 2046 received signals to loudspeaker 2045.Adjusting hardware 2052 can be the discrete component in the exemplary display device 2040, perhaps can incorporate in processor 2021 or other assemblies.
Driving governor 2029 direct self processors 2021 or receive the raw image data that produces by processor 2021 from frame buffer 2028, and suitably with the raw image data reformatting so as high-speed transfer to array driver 2022.Particularly, driving governor 2029 is reformated into a data stream with raster-like format with raw image data, so that it has a chronological order that is suitable for scanning array of display 2030.Then, the information after driving governor 2029 will format is sent to array driver 2022.Although driving governor 2029 (for example lcd controller) normally as one independently integrated circuit (IC) be associated with system processor 2021, yet these controllers also can make up by many kinds of modes.It can be used as hardware and is embedded in the processor 2021, is embedded in the processor 2021 or together fully-integrated with example, in hardware and array driver 2022 as software.
Usually, the self-driven controllers 2029 of array driver 2022 receive the information after the format and video data are reformated into one group of parallel waveform, and the parallel waveform per second of this group many times is applied to from hundreds of of the x-y pel array of display, thousands of lead-in wires sometimes.
In one embodiment, driving governor 2029, array driver 2022, and array of display 2030 be applicable to the display of arbitrary type as herein described.For example, in one embodiment, driving governor 2029 is a traditional display controller or bistable display controllers (a for example interferometric modulator controller).In another embodiment, array driver 2022 is a legacy drive or a bistable display driver (a for example interferometric modulator display).In one embodiment, a driving governor 2029 integrates with array driver 2022.This embodiment is very common in the integrated system of for example cellular phone, wrist-watch and other small-area display equal altitudes.In another embodiment, array of display 2030 is a typical array of display or a bistable array of display (a for example display that comprises an interferometric modulator array).
In certain embodiments, programmability is as indicated above is present in the driving governor in control, and this driving governor can be arranged on several positions of electronic display system.In some cases, the control programmability is present in the array driver 2022.The those skilled in the art will know, can reach the above-mentioned optimization of enforcement in different configurations in number of hardware and/or the component software arbitrarily.
Should be understood that those skilled in the relevant art can make amendment to invention as herein described, still can obtain good result of the present invention simultaneously.Correspondingly, above stated specification is interpreted as a popularity at those skilled in the relevant art, teaching explanation, and should not be construed as limiting the present invention.
Claims (45)
1, a kind of electronic installation, it comprises:
One substrate;
One is formed at the microelectromechanicdevices devices array on the described substrate, and described array has the back side that deviates from described substrate;
One places on the described array and has an inside surface and the backboard of an outside surface, and described inside surface faces the described back side of described array and has a gap betwixt, and described outside surface deviates from described substrate; And
The reinforcement structure that one or more and described backboard combines, wherein when described substrate and described backboard during along its periphery sealing, described one or more reinforcement structures do not contact or are attached to described substrate.
2, electronic installation as claimed in claim 1, wherein said reinforcement structure increases the rigidity of described backboard.
3, electronic installation as claimed in claim 1, the distance between wherein said inside surface and the described substrate changes on described inside surface.
4, electronic installation as claimed in claim 3, wherein said inside surface comprise a middle section and a neighboring area, and the described distance in the wherein said middle section is greater than the described distance in the described neighboring area.
5, electronic installation as claimed in claim 1, wherein said backboard have a thickness that changes.
6, electronic installation as claimed in claim 1, described array is left in wherein said backboard bending.
7, electronic installation as claimed in claim 1, wherein said one or more reinforcement structures are formed on the described inside surface and at least one surface in the described outside surface of described backboard.
8, electronic installation as claimed in claim 1, wherein said inside surface comprise a middle section and a neighboring area, and wherein said one or more reinforcement structure forms in described middle section than more intensive in described neighboring area.
9, electronic installation as claimed in claim 1, wherein said one or more reinforcement structures comprise the interconnection structure of at least one two or more reinforcement structure that interconnect.
10, electronic installation as claimed in claim 9, wherein said at least one interconnection structure further increase the rigidity of described backboard.
11, electronic installation as claimed in claim 1, it further comprises one or more distance pieces that are arranged in the described gap, wherein said one or more distance pieces prevent the directly described back side of the described array of contact of described backboard.
12, electronic installation as claimed in claim 11, wherein said one or more distance pieces be formed on the described inside surface or the described back side of described array on.
13, electronic installation as claimed in claim 1, it comprises that further an edge along described inside surface is sandwiched in the seal between described substrate and the described backboard.
14, electronic installation as claimed in claim 1, wherein said backboard comprise a protrusion that extends towards described substrate along an edge of described backboard.
15, electronic installation as claimed in claim 1, wherein said backboard comprise a periphery along its edge, and the described periphery of wherein said backboard directly is formed on the described substrate.
16, electronic installation as claimed in claim 1, wherein said array comprises an array of display.
17, electronic installation as claimed in claim 1, it further comprises:
One with the processor of described microelectromechanicdevices devices array electric connection, described processor is configured to image data processing; And
One with the memory storage of described processor electric connection.
18, electronic installation as claimed in claim 17, it further comprises one drive circuit, described drive circuitry arrangement becomes to send at least one signal to described microelectromechanicdevices devices array.
19, electronic installation as claimed in claim 18, it further comprises a controller, described controller is configured to send to described driving circuit at least a portion of described view data.
20, electronic installation as claimed in claim 17, it further comprises an image source module, described image source module is configured to send described view data to described processor.
21, electronic installation as claimed in claim 20, wherein said image source module comprise a receiver, transceiver, reach at least one in the transmitter.
22, electronic installation as claimed in claim 17, it further comprises an input media, described input media is configured to receive the input data and transmits described input data to described processor.
23, a kind of method of making one electronic installation, it comprises:
One middle device is provided, and described middle device comprises that a substrate and is formed at the microelectromechanicdevices devices array on the described substrate; And
On the described array of described middle device, form a backboard, between described backboard and described array, there is a gap, described backboard has an inside surface and an outside surface, described inside surface faces described array, described backboard be formed at described inside surface and combine with at least one lip-deep one or more reinforcement structures in the described outside surface, wherein when described substrate and described backboard during along its periphery sealing, described one or more reinforcement structures do not contact or are attached to described substrate.
24, method as claimed in claim 23 wherein forms described backboard and further comprises:
Make described backboard bonding with described substrate along a periphery of described backboard.
25, method as claimed in claim 23 wherein forms described backboard and further comprises:
On the described array of described middle device, form a sacrifice layer;
The described sacrifice layer of etching optionally is to form one or more grooves;
Deposition one backsheet layer on described sacrifice layer; And
Remove described sacrifice layer, between described array and described backsheet layer, to form a gap.
26, method as claimed in claim 25, it uses a material to fill described one or more groove before further being included in the described backsheet layer of deposition.
27, a kind of electronic installation, it comprises:
Be used to support the member of a microelectromechanicdevices devices array;
Be used on described supporting member, providing the member of microelectromechanicdevices devices;
Be used to cover the described member that member is provided; And
Be used to strengthen the member of described covering member, wherein when described supporting member and described covering member during along its periphery sealing, described stiffener does not contact or is attached to substrate.
28, electronic installation as claimed in claim 27, wherein said supporting member comprises a transparent substrates.
29, as claim 27 or 28 described electronic installations, the wherein said member that provides comprises an interferometric modulator array.
30, as claim 27 or 28 described electronic installations, wherein said covering member comprises a backboard.
31, as claim 27 or 28 described electronic installations, wherein said covering member comprises and one or more reinforcement structures.
32, electronic installation as claimed in claim 31, wherein said reinforcement structure increases the rigidity of described covering member.
33, electronic installation as claimed in claim 27, an inside surface of wherein said covering member and the distance between the described supporting member change on described inside surface.
34, electronic installation as claimed in claim 33, wherein said inside surface comprise a middle section and a neighboring area, and wherein the described distance in described middle section greater than the described distance in described neighboring area.
35, electronic installation as claimed in claim 30, wherein said backboard have a thickness that changes.
36, electronic installation as claimed in claim 30, the described member that provides is provided in wherein said backboard bending.
37, electronic installation as claimed in claim 31, wherein said one or more reinforcement structures are formed on the inside surface and at least one surface in the outside surface of described covering member.
38, electronic installation as claimed in claim 31, wherein said covering member comprises that one has the inside surface of a middle section and a neighboring area, and wherein said one or more reinforcement structure forms in described middle section than more intensive in described neighboring area.
39, electronic installation as claimed in claim 31, wherein said one or more reinforcement structures comprise the interconnection structure of at least one two or more reinforcement structure that interconnect.
40, electronic installation as claimed in claim 39, wherein said at least one interconnection structure further increase the rigidity of described covering member.
41, electronic installation as claimed in claim 38, it comprises that further one is used to prevent the directly described member that member is provided of contact of described covering member.
42, electronic installation as claimed in claim 41, the wherein said member that prevents comprises one or more distance pieces.
43, electronic installation as claimed in claim 42, wherein said one or more distance pieces be formed on the described inside surface or the described back side of described array on.
44, electronic installation as claimed in claim 27, wherein said covering member comprise a protrusion that extends towards described supporting member along an edge of described covering member.
45, electronic installation as claimed in claim 31, wherein said one or more reinforcement structures are to be made by a material that contains a drying agent.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61340804P | 2004-09-27 | 2004-09-27 | |
| US60/613,408 | 2004-09-27 | ||
| US11/090,774 | 2005-03-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1769957A CN1769957A (en) | 2006-05-10 |
| CN100470305C true CN100470305C (en) | 2009-03-18 |
Family
ID=36747153
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101051035A Expired - Fee Related CN100470305C (en) | 2004-09-27 | 2005-09-22 | System and method for protecting microelectromechanical systems array using structurally reinforced back-plate |
| CN 200510105835 Expired - Fee Related CN1762786B (en) | 2004-09-27 | 2005-09-23 | System and method for protecting microelectromechanical systems array using structurally reinforced back-plate |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200510105835 Expired - Fee Related CN1762786B (en) | 2004-09-27 | 2005-09-23 | System and method for protecting microelectromechanical systems array using structurally reinforced back-plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN100470305C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102196989A (en) * | 2008-10-29 | 2011-09-21 | Nxp股份有限公司 | An integrated component and a method of manufacturing an integrated component |
| CN102264019A (en) * | 2010-05-26 | 2011-11-30 | 国立清华大学 | Micro-electromechanical condenser microphone |
| US9063333B2 (en) * | 2012-06-01 | 2015-06-23 | Pixtronix, Inc. | Microelectromechanical device and method of manufacturing |
| US10185363B2 (en) | 2014-11-28 | 2019-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| US10589980B2 (en) * | 2017-04-07 | 2020-03-17 | Texas Instruments Incorporated | Isolated protrusion/recession features in a micro electro mechanical system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1220621C (en) * | 2003-04-30 | 2005-09-28 | 华中科技大学 | Post-package technology for microelectromechinical system |
-
2005
- 2005-09-22 CN CNB2005101051035A patent/CN100470305C/en not_active Expired - Fee Related
- 2005-09-23 CN CN 200510105835 patent/CN1762786B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1762786A (en) | 2006-04-26 |
| CN1762786B (en) | 2013-02-13 |
| CN1769957A (en) | 2006-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101237888B1 (en) | Method and device for providing electronic circuitry on a backplate | |
| JP4331148B2 (en) | Method and system for sealing a substrate | |
| JP4563892B2 (en) | System and method for protecting microelectromechanical systems using backplates with non-flat portions | |
| CN1755473B (en) | Method and system for packaging a MEMS device | |
| EP1640329A2 (en) | System and method for protecting microelectromechanical systems array using structurally reinforced back-plate | |
| KR101199903B1 (en) | System and method for display device with integrated desiccant | |
| CN102141679A (en) | Method and device for packaging a substrate | |
| KR20060092916A (en) | Method and system for providing mems device package with secondary seal | |
| KR20060092899A (en) | System and method for display device with activated desiccant | |
| KR20060092875A (en) | System and method of providing mems device with anti-stiction coating | |
| CN100470305C (en) | System and method for protecting microelectromechanical systems array using structurally reinforced back-plate | |
| US8435838B2 (en) | Optimization of desiccant usage in a MEMS package | |
| US7550912B2 (en) | Method and system for maintaining partial vacuum in display device | |
| CN100517040C (en) | Electronic display and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1087477 Country of ref document: HK |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GAOTONG MEMS SCIENCE AND TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: IDC CO., LTD. Effective date: 20100603 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20100603 Address after: American California Patentee after: Qualcomm MEMS Technology Corp. Address before: American California Patentee before: IDC LLC |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090318 Termination date: 20110922 |
|
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1087477 Country of ref document: HK |