CN100442468C - Flip chip mounting method and flip chip mounting element - Google Patents

Flip chip mounting method and flip chip mounting element Download PDF

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Publication number
CN100442468C
CN100442468C CNB2005800309211A CN200580030921A CN100442468C CN 100442468 C CN100442468 C CN 100442468C CN B2005800309211 A CNB2005800309211 A CN B2005800309211A CN 200580030921 A CN200580030921 A CN 200580030921A CN 100442468 C CN100442468 C CN 100442468C
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China
Prior art keywords
resin
flip
distribution substrate
solder powder
convection current
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CN101019219A (en
Inventor
辛岛靖治
山下嘉久
留河悟
北江孝史
中谷诚一
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

A flip chip mounting method, which is applicable to the flip chip mounting of the next-generation LSI and is high in productivity and reliability, comprising the steps of supplying resin (13) containing solder powder and a convective additive (12) onto a wiring board (10) having a plurality of electrode terminals (11), then bringing a semiconductor chip (20) having a plurality of connection terminals (21) into contact with the surface of resin (13), and heating the wiring board (10) to a solder powder melting temperature under this condition. The heating is conducted at a temperature higher than the boiling temperature of the convective additive (12) to allow the boiled convective additive (12) to flow throughout the resin (13). During this heating process, melted solder powder is self-assembled between the electrode terminal (11) of the wiring board (10) and the connection terminal (21) of the semiconductor chip (20) to thereby electrically connect the electrode terminal (11) with the connection terminal (21). Finally, the resin (13) is cured to fix the semiconductor chip (20) to the wiring board (10).

Description

Flip-chip mounting method
Technical field
The present invention relates to flip-chip (flip chip) installation method and the flip-chip mounting body of semiconductor chip lift-launch on the distribution substrate related in particular to flip-chip mounting method and the flip-chip mounting body semiconductor chip, that productivity ratio is high that also can tackle narrow compartmentation.
Background technology
In recent years, follow the high density, highly integrated of the employed semiconductor integrated circuit of electronic equipment (LSI), the multitube pin (peen) of the electrode terminal of LSI sheet is changed, narrow compartmentation is also progressive rapidly.These LSI sheets are installed on the distribution substrate, are postponed in order to reduce distribution, and extensively adopt flip-chip to install.And, in this flip-chip is installed, on the electrode terminal of LSI sheet, form solder bump (solder bump) usually, engage in the lump with the electrode that on the distribution substrate, forms via this solder bump.
But, for being surpassed 5000 such LSI of future generation, the electrode tip subnumber is installed on the distribution substrate, need form on the distribution substrate and the corresponding raised pad in narrow interval below the 100 μ m, but also be difficult to tackle in this with present solder bump formation technology.In addition, owing to need to form a plurality of raised pads corresponding,, also require to shorten the lift-launch productive temp (tact) of each sheet to realize high production rate therefore in order to realize cost degradation with the electrode tip subnumber.
All the time, as the formation technology of raised pad, plating method or stencil printing etc. have been developed.Though the plating method is suitable for narrow interval, owing to therefore complex procedures has problems on productivity ratio, in addition, though stencil printing is superior on productivity ratio, owing to adopt mask therefore to be not suitable for narrow compartmentation.
So recently, developed several and on the electrode of LSI sheet or distribution substrate, optionally formed the technology of solder bump.These technology not only are suitable for forming fine raised pad, can also form raised pad in the lump, so productivity ratio is also superior, thereby are gazed to the technology of the installation of distribution substrate as tackling LSI of future generation.
One of them is following technology: the formed soldering paste of mixture (solder paste) of solder powder and solder flux (flux) is applied (ベ Tu り comprehensively) on the substrate that is formed with electrode from the teeth outwards, and heated substrate, thus, make the solder powder fusion, do not causing between adjacent electrode under the situation of short circuit, optionally forming solder bump (for example, opening 2000-94179 communique (below be also referred to as " patent documentation 1 ") with reference to the spy) on the high electrode of wetability.
In addition, following technology is arranged: will be that the paste constituent (so-called chemical reaction precipitation type scolder) of main component is coated on the substrate that is formed with electrode comprehensively with organic acid lead salt and metallic tin, and heated substrate, thus, cause the substitution reaction of Pb and Sn, the alloy of Pb/Sn (is for example optionally separated out on the electrode of substrate, open flat 1-157796 communique (hereinafter referred to as " patent documentation 2 ") and electronic equipment mounting technique with reference to the spy, in September, 2000 number, pp.38-45 (below be also referred to as " non-patent literature 1 ")).
The purpose of the bumping technology of patent documentation 1 is that the surface oxidation of control solder powder has the wetability of relative metal thus, makes in abutting connection with being difficult for causing short circuit between terminal.But,, be difficult to satisfy originally opposite wetability and be difficult for causing these both sides of short circuit by controlled oxidation amount, method for oxidation.In addition, the material of patent documentation 2 employed chemical reaction precipitation type scolders has been owing to utilized specific chemical reaction, so the degree of freedom of the selection formed of scolder is low, and also residual in reply Pb liberalization have a problem.
In addition, adopted the flip-chip of existing bumping technology to install, after semiconductor chip being carried on the distribution substrate that is being formed with raised pad, for semiconductor chip being fixed on the distribution substrate, also need to be called as the resin injection semiconductor chip of underfilling (underfill) and the operation between the distribution substrate.
Therefore, as the electrical connection between the opposed electrode terminal that carries out semiconductor chip and distribution substrate simultaneously, and semiconductor chip to the fixing method of distribution substrate, developed the flip-chip mounting technique that adopts anisotropic conductive material (for example, opening 2000-332055 communique (below be also referred to as " patent documentation 3 ")) with reference to the spy.It is supplying with the thermosetting resin that contains conducting particles between distribution substrate and semiconductor chip, and when semiconductor chip pressurizeed, the heat hot thermosetting resin, thus, realize electrical connection, and semiconductor chip fixing to the distribution substrate between the electrode terminal of semiconductor chip and distribution substrate simultaneously.
In addition, proposed to adopt the resin that contains low-melting-point metal filler (electroconductive particle), the technology (for example, opening 2004-260131 communique (below be also referred to as " patent documentation 4 "), non-patent literature 1 and telecommunications technology EMD96-15 (below be also referred to as " non-patent literature 2 ") with reference to the spy) of semiconductor chip is installed on substrate.
It makes metallic stuffing (electroconductive particle) fusion in the resin, forms metal bond from coupling ground between the electrode of substrate and semiconductor chip.But, at 10th Symposium on " Microjoiningand Assembly Technology in Electronics " February 5-6,2004, pp.183-188 (below be also referred to as " non-patent literature 3 ") and 9th Symposium on " Microjoining andAssembly Technology in Electronics " February 6-7,2003, among the pp.115-120 (below be also referred to as " non-patent literature 4 "), only sought the mechanism that forms from matching of metal bond specially.
Also have, in described non-patent literature 1,2 and patent documentation 4, the situation that adopts the reproducibility resin as resin is disclosed, but its be the so-called underfilling material that is called as not flow-type ones (no flow type) resin (for example, open 2001-329048 communique (below be also referred to as " patent documentation 5 ") with reference to the spy), be in resin, to add the curing agent of acid anhydrides, and produce the resin of flux activity by the carbonic acid that this acid anhydrides of hydrolysis generates.
In described patent documentation 4, only desire a characteristic by electrical dispersion of nano-particles and wetability, with the electroconductive particle aggegation on electrode, consequently, the volume ratio preferred lower limit value of the electroconductive particle that is contained in the resin is more than 20 volume %, and more preferably more than 30 volume %.
But, in the flip-chip that has adopted described anisotropic conductive material is installed, by via the mechanicalness contact of conducting particles obtain interelectrode conducting, still, be difficult to obtain stable conducting state with this mode.In addition, the conducting particles that is clipped in the opposite electrode is kept by the cohesive force that hot curing produced of resin, therefore, need make the characteristic unanimities such as particle size distribution of characteristic such as the modulus of elasticity of thermosetting resin or coefficient of thermal expansion or conducting particles, thereby have this problem of control that is difficult to carry out installation procedure.That is, adopted the flip-chip of anisotropic conductive material to install in order to be applicable to that the link subnumber surpasses 5000 such LSI sheets of future generation, in the also residual problems that have a lot of needs to solve aspect productivity ratio or the reliability.
Summary of the invention
Given this present invention proposes just, and its purpose is to provide a kind of that install applicable to the flip-chip of LSI of future generation, productivity ratio and high flip-chip mounting method and the flip-chip mounting body of reliability.
The invention provides a kind of with to have the distribution substrate of a plurality of electrode terminals opposed and configuration has the semiconductor chip of a plurality of splicing ears, and be electrically connected the flip-chip mounting method of the described splicing ear of the described electrode terminal of described distribution substrate and described semiconductor chip, this method comprises:
(1) on described distribution substrate, supplies with the operation of the resin contain solder powder and convection current additive;
(2) make described semiconductor chip be connected to operation on the described resin surface;
(3) described distribution substrate is heated to the operation of the temperature of described solder powder fusion;
(4) after described heating process, make the operation of described resin solidification.
In the heating process (3) of described distribution substrate, the solder powder that makes described fusion is between the described splicing ear of described electrode terminal that is integrated into described distribution substrate and described semiconductor chip, form connector thus, in the curing process of described resin, described semiconductor chip is fixed on the described distribution substrate.Also have, the resin of supplying with to described distribution is the resin combination that contains solder powder and convection current additive, preferably resin combination is coated on the substrate and in the mode of film resin combination is supplied with on the distribution substrate.
In the method for the invention, when substrate was heated to the degree of solder powder fusion, solder powder can easily move in resin combination, and consequently, solder powder can be easily from being integrated on the electrode.Thereby the heating process of described substrate is preferably carried out under the temperature that the viscosity of described resin descends.
In one embodiment of the present invention, the heating process of described substrate is preferably carried out under than the high temperature of the boiling point of described convection current additive, in addition, in other embodiments, the preferably convection current in described resin of the convection current additive of described boiling, and then in other embodiments, in the heating process of described substrate, described solder powder is convection current in described resin preferably.The feature of these execution modes can be used separately, perhaps can use these features with combination arbitrarily, perhaps uses all features together.
Under described situation, convection current additive convection current and/or solder powder convection current in resin in resin by heating is seethed with excitement thus, promote moving of solder powder, therefore can make the combination of fusion welding powder even.Consequently, the solder powder set certainly on electrode by even growth can form the higher fine connector of uniformity in the lump.Thereby when described convection current additive seethed with excitement, the fusion of scolder powder was not preferred, and therefore, the boiling point of described convection current additive preferably is lower than the fusing point of described solder powder.But the convection current additive also can seethe with excitement in the solder powder fusion or after it, also represents the described effect of convection current additive this moment.In a word, even arbitrary phenomenon produces earlier in the boiling of the fusion of scolder and convection current additive, under the state of the phenomenon that has produced both sides, also can utilize effect of the present invention.
In certain preferred implementation, described convection current additive is made of at least a material that is selected from the group that is made of solvent, glycerol, wax (for example, the such wax of electronics wax (electron wax)), isopropyl alcohol, butyl acetate, butyl carbitol (butyl carbitol) and ethylene glycol.Also have, in the present invention, so-called solvent is the liquid component that the constitutes solder flux composition of liquid (at room temperature as).Also has the conventional what is called " solder flux " that adopts when so-called solder flux is welding.For example, but as alcohol, acetate of butyl carbitol organic solvents such as (butyl carbitol acetate) etc. such as solvent illustration isopropyl alcohols.
In addition, even described solvent is contained in the effect that also can access in the solder flux as the convection current additive.When use comprises the solder flux of reproducibility material and solvent, oxygenous bubble from solvent not only, the also reduction reaction of the oxide by metals such as conductive pattern, conducting particless and oxygenous bubble sometimes.At this moment, because this bubble also can be brought into play the effect of convection current additive, be preferred therefore.In addition, the moisture that is contained in the distribution substrate also can play a role as the convection current additive.
Also have, when adopting solder flux, the resin that method of the present invention adopted contains the wherein common resin that comprises, activating agent, delustering agent etc. and gets final product.Thereby in the present invention, resin also can contain solvent other compositions in addition that solvent and solder flux comprise, that is, resin also can contain solder flux.
In other embodiments, as described convection current additive, also can be free or be created on the material of the composition that can seethe with excitement in the heating process.That is, can under the thermal environment that heating process produces, newly bring the convection current compound of such composition to use as additive.Particularly, as such compound, can illustration decompose by heating, consequently, bring the compound that has with the composition of convection current additive identical functions, for example hydrate, especially contain compound (for example aluminium hydroxide, dawsonite, ammonium metaborate, barium metaborate, azodicarbonamide, the sodium acid carbonate etc. of the crystallization water.
In certain preferred implementation, the resin of supplying with to the distribution substrate promptly is configured for forming the resin of the resin combination of described connector, be in thermosetting resin (for example epoxy resin), thermoplastic resin (for example polycarbonate resin) or the light-cured resin (for example photo-curable epoxy resin) any, if the present invention is not produced harmful effect, then also can be principal component and contain other resins (for example phenolic resins) with any.In order to understand the content of this specification easily, under the situation of curable resin, curing reaction does not finish in heating process, even preferred curing reaction begins, curing reaction also and less carries out, and preferably curing reaction does not begin in fact.Also can be after having formed connector, curing reaction just carries out or finishes, therefore, further heated substrate.
In certain preferred implementation, in the heating process (3) of described distribution substrate, make the surperficial butt of semiconductor chip and the described resin on described distribution substrate, supplied with, heat described distribution substrate simultaneously.This moment is preferred, the electrode that on described distribution substrate, forms (thereby, distribution substrate) relatively relatively, will and described semiconductor chip between remain certain distance, thus, be provided with certain clearance.That is, preferably implementing to make the distance between distribution substrate and the semiconductor chip not change during the heating process.
In certain preferred implementation, in the heating process (3) of described distribution substrate, also can apply certain pressure to described semiconductor chip, push the described resin of being supplied with thus, heat described distribution substrate simultaneously.Also have, as mentioned above, when heating process, implement to make that the distance between distribution substrate and the semiconductor chip does not change, consequently, can during at least a portion of heating process, press pressurizing resin.
Preferred its particle size distribution of described solder powder is a point (sharp), and especially preferably the particle by roughly the same particle diameter constitutes.In certain preferred implementation, in the heating process of described substrate, be arranged at the particle diameter of preferably being wider than described solder powder at the width (or thickness) of electrode that forms on the described distribution substrate and the certain interval between the described semiconductor chip, preferred much wide.For example, the maximum particle diameter of solder powder is below 100% of gap preferably, is more preferably below 90%.
In certain preferred implementation, in the heating process of described distribution substrate, the convection current additive of described boiling is discharged to the outside from the periphery that is present in the gap between described distribution substrate and the described semiconductor chip.
In the method for the invention, semiconductor chip can be the suitable arbitrarily semiconductor chip that need be connected with the distribution substrate, for example can enumerate LSI sheet, memory, optical element, RF element etc.In certain preferred implementation, described semiconductor chip with the opposed plane of described distribution substrate on the position of a plurality of electrode contrapositions that on described distribution substrate, form, be formed with metal pattern with the roughly the same shape of described electrode.Also have, the described distribution substrate that need be connected with semiconductor chip also can be a for example LSI sheet etc. of semiconductor chip.
In the method for the invention, make the operation (4) of resin solidification can be corresponding and implement with proper method arbitrarily with employed resin.For example under the situation that adopts thermosetting resin, in heating process (3) afterwards,, in preferred mode,, make resin solidification by continuing heating with higher temperature by continuing heating.Under the situation that adopts photo-curable (for example ultra-violet solidified) resin, in heating process (3) afterwards, make its curing by irradiates light.At this moment, after heating process, can behind cooling distribution substrate and semiconductor chip, shine, or under situation about not cooling off, shine.In addition, under the situation of using thermoplastic resin, after heating process, make resin solidification by cooling.
In certain preferred implementation,, thus, on described distribution substrate, these a plurality of semiconductor chips are carried out flip-chip and install at a plurality of semiconductor chips of butt on the described resin surface of supplying with on the described distribution substrate.
In certain preferred implementation of method of the present invention, described solder powder is preferably at 0.5～30 volume %, more preferably at the ratio of 0.5～20 volume %, and contains in described resin.Also have, this ratio is benchmark (is benchmark with the volume under the room temperature (25 ℃)) with the amount of the resin combination integral body that is made of resin, solder powder, convection current additive and other compositions of containing as required.For example, resin also can contain the one-tenth that for example is contained in the described solder flux as required and grades.
The present invention also provides a kind of flip-chip mounting method, the method is characterized in that, comprising:
(a) preparation has the operation of the distribution substrate of a plurality of electrode terminals;
(b) on described distribution substrate, supply with the operation of the resin contain solder powder and convection current additive;
(c) described distribution substrate is heated to the temperature of described solder powder fusion, forms the operation of raised pad;
(d) semiconductor chip that will have a plurality of splicing ears carries operation on described distribution substrate with described splicing ear and the opposed mode of described raised pad;
(e) described distribution substrate is heated to the operation of the temperature of described raised pad fusion,
The connector that formation is electrically connected the described splicing ear of the described electrode terminal of described distribution substrate and described semiconductor chip.
In the operation (c) that raised pad is formed on the described electrode terminal, make solder powder after the described fusion from being integrated on the described electrode terminal of described distribution substrate, on described electrode terminal, form raised pad thus.In this operation, heat the boiling point that described distribution substrate temperature preferably is higher than described convection current additive.In this operation (c), the flat board that preferably will cover the resin of being supplied with is positioned on the resin and heats, in addition, and convection current additive convection current in described resin of preferred described boiling.Also have, dull and stereotyped material with formation electrode terminal and splicing ear compares, and the wetability of the solder powder after the preferred fusion relatively is littler, for example can use glass plate.
In certain preferred implementation, also can comprise the operation of removing described resin in the operation (c) that forms described raised pad afterwards from described distribution substrate.Removing of resin can for example, can be removed by carrying out ultrasonic waves for cleaning with organic solvent with proper method enforcement arbitrarily.
Also have, in the heating process (e) that forms connector, preferably by making the raised pad fusion make the contact portion alloying of described splicing ear and described raised pad form connector.
Also have, in described another flip-chip mounting method, intactly adopt the feature of the solder powder relevant, resin, convection current additive with the flip-chip mounting method of explanation before.
In flip-chip mounting method of the present invention, solder powder in heating process after the fusion moves in resin, in especially preferred execution mode, the convection current additive that is contained in the resin seethes with excitement by heating, convection current additive convection current in resin of boiling, thus, promote solder powder moving in resin, thereby fusion welding powder being combined in the resin each other carried out equably.Consequently, evenly the fusion welding powder after the growth thus, can form the high connector of uniformity between electrode terminal and splicing ear between the splicing ear of electrode terminal that is integrated into the high distribution substrate of wetability and semiconductor chip.In addition, by between distribution substrate and semiconductor chip, making certain resin solidification, semiconductor chip can be fixed on the distribution substrate.Especially adopting as resin under the situation of thermosetting resin, can carry out electrical connection, and semiconductor chip fixing to the distribution substrate between the electrode terminal of semiconductor chip and distribution substrate simultaneously by continuous operation, thereby can realize the flip-chip mounting body that productivity ratio is high.
In addition, by making semiconductor chip and the resin surface butt of on the distribution substrate, supplying with, can prevent the convection current additive that seethes with excitement from resin surface to external evaporation, therefore, can maintain the effective additives of convection current in the resin that is sandwiched between distribution substrate and the semiconductor chip, thereby the solder powder after the fusion is integrated between opposed terminal more certainly.Thus, can make the electrical connection of electrode terminal and splicing ear more even, thereby can realize the flip-chip mounting body that reliability is high.
And then, give the solder powder that is dispersed in the resin by the kinetic energy that convection current produced of convection current additive that will boiling, can make solder powder effectively from being integrated between terminal, therefore, can reduce after between electrode terminal and splicing ear, having formed connector, in the resin beyond the connector the amount of residual solder powder.Especially, be redefined for connector by the ratio that solder powder is contained and form needed optimal amount in resin, the residual quantity of the solder powder after can eliminating connector in fact and forming.Consequently, can improve the insulation patience between connector, thereby also can fully tackle the thin compartmentation of semiconductor chip.
Description of drawings
Fig. 1 (a)～(d) is the process profile of the formation method of expression fine raised pad related to the present invention;
Fig. 2 (a)～(c) is the process profile of expression flip-chip mounting method of the present invention;
Fig. 3 is the chart of the temperature curve of expression heating process flip-chip mounting method of the present invention, the distribution substrate;
Fig. 4 be the expression splicing ear flip-chip mounting method of the present invention, the distribution substrate around (peripheral) configuration vertical view;
Fig. 5 is the vertical view of face battle array (area array) configuration of expression splicing ear flip-chip mounting method of the present invention, the distribution substrate;
Fig. 6 (a) is the vertical view that flip-chip has been installed the distribution substrate of a plurality of semiconductor chips, and Fig. 6 (b) is its profile;
Fig. 7 (a)～(e) is the process profile of expression another flip-chip mounting method of the present invention;
Fig. 8 is the vertical view of expression with resin distribution substrate of condition of supplying on the distribution substrate that has electrode terminal at periphery;
Fig. 9 (a)～(c) is illustrated in the process profile that on the distribution substrate semiconductor chip is carried out the method for flip-chip installation on every side;
Figure 10 represents that the resin that will contain solder powder is coated on the circular electrode and the photo of the state after the heating;
Figure 11 represents that the resin that will contain solder powder and convection current additive is coated on the circular electrode and the photo of the state after the heating.
Among the figure: 10-distribution substrate; The 11-electrode terminal; 12-convection current additive; The 13-resin; The 14-flat board; The 15-solder ball; The 16-raised pad; 20 (20a, 20b, 20c, 20d) semiconductor sheet; The 21-splicing ear; The 22-connector; The 23-underfilling; The 30-middle section.
Embodiment
Below, with reference to the execution mode of description of drawings installation method of the present invention.In the following description, for the purpose of simplifying the description, to having the identical reference marks of structural element mark of identical function in fact.Also have, the present invention is not limited to following execution mode.
(execution mode 1)
With reference to Fig. 1 (a)～(d), the method for the formation solder bump of described another flip-chip mounting method is described.Shown in Fig. 1 (a), supply with the resin 13 that contains solder powder (not shown) and convection current additive 12 being formed with on the distribution substrate 10 of a plurality of electrodes 11.Then, shown in Fig. 1 (b), make dull and stereotyped 14 with the surperficial butt of the resin of on distribution substrate 10, supplying with 13, simultaneously distribution substrate 10 is heated to the temperature of solder powder fusion.In this heating process, the solder powder after the fusion is from set, and shown in Fig. 1 (c), the solder ball 15 after the growth optionally is formed on a plurality of electrodes 11.Then, shown in Fig. 1 (d),, and remove resin 13, then obtain on a plurality of electrodes 11, being formed with the distribution substrate 10 of raised pad 16 if dull and stereotyped 14 surfaces from resin 13 are separated.
This raised pad formation method is characterised in that, contains the convection current additive that also contains preferred boiling under the temperature of solder powder fusion in the resin of solder powder.Thereby, in a preferred embodiment, under the temperature of solder powder fusion, the additive that is contained in the resin (hereinafter referred to as the convection current additive) boiling, the convection current additive of this boiling becomes gas and convection current in resin, thus, the moving of the solder powder after the fusion that promotes in resin, to swim, thus carry out the uniform combination of fusion welding powder.Thus, can form uniform fine raised pad.
At this, make the surface of resin 13 and dull and stereotyped 14 butts be for the convection current additive 12 that suppresses boiling a little from the surface of resin 13 to external evaporation.So,, therefore can form more uniform fine raised pad owing to can maintain the additive 12 of convection current in the resin effectively.
Also have, the described raised pad that illustrates with reference to Fig. 1 (a)～(d) forms operation just inventors' supposition eventually, and the present invention is not limited to this idea.
In order easily to understand the explanation of described convection current additive, relevant with the convection current additive and " convection current " used and only do not mean that convection current under the tight meaning in this manual, but mean as the various of additive of motion mode and move.Owing to also can contain convection current as so a kind of mode that moves, therefore use " convection current " such term for convenience's sake.Thereby, in the present invention, as long as the convection current additive by boiling in resin 13 moves, and give kinetic energy to the solder powder that is dispersed in the resin 13, thereby give the effect that promotes that solder powder moves, no matter then such moving is moving of which kind of mode, all is contained in this manual for convenience's sake and in " convection current " used.
Also have, relevant with solder powder and when using " convection current " such term,, have more than the convection current of keeping under the tight meaning with identical before, but mean various mobile as motion mode.Owing to also can contain convection current as so a kind of mode that moves, therefore use " convection current " such term for convenience's sake.
Also have, the present application person adopts the resin that only contains the resin of solder powder and also contain additive (for example in the temperature of solder powder fusion or be lower than the composition that seethes with excitement under its temperature) in solder powder, carries out the comparative experiments that raised pad forms.When coating on the printed circuit board in circular electrode array-like configuration only contain the resin of solder powder and contain solder powder and the resin of additive after, make dull and stereotyped with its on butt, heat simultaneously.
Consequently, adopting when only containing the resin of solder powder, do not form solder layer as shown in figure 10 well, regional solder powder between electrode and electrode keeps the state of dispersion, and is relative therewith, when having adopted the resin that contains solder powder and additive, on all electrodes, all form solder bump as shown in figure 11 well, and (that is, the zone between electrode and the electrode) not remaining solder powder beyond electrode obviously can be confirmed different when not containing additive.
Also have material and condition below when described comparative experiments, using:
Under the situation of Figure 10
Resin: epoxy resin
Solder powder: SnAgCu (fusing point: 220 ℃)
The ratio of resin and solder powder: 50 weight %:50 weight %
Printed circuit board: Panasonic's electronic unit (strain) system ALIVH
(diameter of electrode and interval: diameter 300 μ m, interval 500 μ m)
The heating-up temperature of substrate: 250 ℃
Under the situation of Figure 11
Convection current additive: add (boiling point: 170 ℃) as solder flux
The ratio of resin, solder powder and solder flux: 45 weight %:50 weight %:5 weight %
Other conditions are identical with the situation of Figure 10.
Under the situation of Figure 11, under the temperature of solder powder fusion, the additive that is contained in the resin (below be also referred to as the convection current additive) boiling, convection current additive convection current in resin along with boiling, observe and form raised pad well on electrode, therefore, the convection current of convection current additive has the effect that the solder powder after the promotion fusion moves, thus, be speculated as the even combination that promotes the fusion welding powder.Under the situation of Figure 10,, therefore can't expect this effect as can be known owing to there is not the convection current additive.
The resin of Shi Yonging in the method for the invention, the characteristic that the viscosity of utilization resin under the temperature of solder powder fusion descends, and have an effect in " sea " that solder powder after the fusion swims freely, moves, in described method, also can after forming, remove raised pad this resin as required.
So formed after the solder bump, identical with the flip-chip mounting method of routine, mounting semiconductor chip on raised pad, make the splicing ear of the electrode terminal of distribution substrate and semiconductor chip described as expected opposed, and their heating are formed connector (that is the part that their are electrically connected) betwixt.Connector between the connection electrode of raised pad and semiconductor chip preferably is the alloying state.
Also have, when resin for example is thermosetting resin as used herein, after raised pad forms, it is kept, and substrate is heated to the temperature of regulation, make resin solidification, then can intactly flat board 14 be fixed on the substrate 10 with resin if do not remove resin.
The flip-chip mounting method of initial explanation of the present invention is conceived to this point and forms, and replaces flat board 14, makes semiconductor chip and resin butt, utilizes described raised pad formation method, on the distribution substrate semiconductor chip is carried out flip-chip and installs.
(execution mode 2)
Fig. 2 (a)～(c) is the figure of basic working procedure of the flip-chip mounting method of expression embodiments of the present invention 2.
At first, shown in Fig. 2 (a), supply with the resin 13 that contains solder powder (not shown) and convection current additive 12 having on the distribution substrate 10 of a plurality of electrode terminals 11.Then, shown in Fig. 2 (b), make the surperficial butt of semiconductor chip 20 and the resin of on distribution substrate 10, supplying with 13.At this moment, the semiconductor chip 20 with a plurality of splicing ears 21 is opposed and dispose with the distribution substrate 10 with a plurality of electrode terminals 11.Then, under this state, distribution substrate 10 is heated to the temperature of solder powder fusion or than its high temperature.At this, the heating-up temperature of distribution substrate 10 is carried out convection current additive 12 convection current in resin 13 of boiling under at the boiling point of convection current additive 12 or than its high-temperature.
In this heating process, make solder powder after the fusion between the splicing ear 21 of electrode terminal 11 that is integrated into distribution substrate 10 and semiconductor chip 20, thus, form the connector 22 that electrode terminal 11 and splicing ear 21 are electrically connected.
At last, shown in Fig. 2 (c), resin 13 is solidified, semiconductor chip 20 is fixed on the distribution substrate 10.
The method according to this invention, the convection current additive that contains in the resin 13 12 seethes with excitement by heating, convection current additive 12 convection current in resin 13 of boiling, thus, promote solder powder moving in resin 13, thereby fusion welding powder being combined in the resin 13 each other carried out equably.Consequently, evenly the fusion welding powder after the growth is between the splicing ear 21 of electrode terminal 11 that is integrated into the high distribution substrate 10 of wetability and semiconductor chip 20, thus, can between electrode terminal 11 and splicing ear 21, obtain the high connector of uniformity 22.Meanwhile, solidify, semiconductor chip 20 can be fixed on the distribution substrate 10 by making the resin 13 between distribution substrate 10 semiconductor chips 20.Thereby, can carry out fixing on distribution substrate 10 of electrical connection between the electrode terminal of semiconductor chip 20 and distribution substrate 10 and semiconductor chip 20 simultaneously with continuous operation, thereby can realize the flip-chip mounting body that productivity ratio is high.
In addition, by making semiconductor chip 20 and the resin 13 surperficial butts of on distribution substrate 10, supplying with, can prevent the convection current additive 12 that seethes with excitement from resin 13 surfaces (uper side surface) to external evaporation, therefore, can maintain the effective convection current additive 12 of convection current in the resin 13, thereby the solder powder after the fusion is integrated between opposed terminal more certainly.Thus, can make the electrical connection of electrode terminal 11 and splicing ear 12 more even, thereby can realize the flip-chip mounting body that reliability is high.
And then, give the solder powder of in resin, disperseing by the kinetic energy that convection current produced of convection current additive that will boiling, can make solder powder effectively from being integrated between terminal, therefore, can reduce after between electrode terminal and splicing ear, having formed connector, in the resin beyond the connector the amount of residual solder powder.Especially, be redefined for connector by the ratio that solder powder is contained and form needed optimal amount in resin, the residual quantity of the solder powder after can eliminating connector in fact and forming.Consequently, can improve the insulation patience between connector, thereby also can fully tackle the thin compartmentation of semiconductor chip.
Below, referring again to Fig. 2 (a)～(c), illustrate in greater detail embodiments of the present invention/
Shown in Fig. 2 (a), prepare to be formed with from the teeth outwards the distribution substrate 10 of electrode 11, behind the surface with abundant cleaning distribution substrates 10 such as acetone, coating contains the resin 13 of solder powder (not shown) and convection current additive 12 on the surface of distribution substrate 10.At this, for example can use Sn-Ag as solder powder is solder powder (also comprising the solder powder that is added with Cu etc.), but also can be other solder powder.For example, as other solder powder, can use become Sn-Zn system after the fusion, Sn-Bi is the free scolder of Pb, the Pb-Sn scolder of alloy, or becomes the powder that Cu-Ag is the eutectic solder material of alloy after the fusion.In addition, solder powder preferably has fusing point 100～300 ℃ scope, more preferably has fusing point 130～280 ℃ scope.
In addition, as convection current additive 12, the temperature that preferably makes the solder powder fusion at heating distribution substrate 10 is 100～300 ℃ or the material that seethes with excitement under the low temperature than it for example.For example, the employed solvent of resin system solder flux that with the organic acid is active component can be used as the convection current additive.In addition, for example, also can use wax (more specifically, electronics wax etc.), glycerol, isopropyl alcohol, butyl acetate, butyl carbitol and ethylene glycol etc.Also have, the convection current additive can the temperature lower slightly than the fusing point of solder powder, preferably low 10～100 ℃ temperature, more preferably seethe with excitement under low 10～60 ℃ the temperature, perhaps the fusing point of the boiling point of convection current additive and solder powder also can be identical in fact, perhaps the convection current additive also can be in the temperature higher slightly, preferred high 10～100 ℃ temperature than the fusing point of solder powder, more preferably seethe with excitement under high 10～20 ℃ temperature.
When this boiling point was lower than fusing point, the convection current additive at first seethed with excitement, and promoted the moving of scolder of fusion then.When this boiling point was higher than fusing point, solder powder is fusion at first, and boiling after the convection current additive promotes the moving of scolder after the fusion.At this moment, the heating-up temperature of heating process is the temperature that is higher than the fusing point of scolder, even but also be heated to the temperature of melt solder this moment, there is not difference on this point.
In the present invention, for example can use epoxy resin, but for example also can be other thermosetting resins, thermoplastic resin, ultraviolet hardening or the like light-cured resin etc. as resin.Mobile becoming easily in order to make solid or fusion welding powder in heating process of the present invention, and preferred under heating-up temperature the low resin of viscosity.
Then, shown in Fig. 2 (b), make semiconductor chip 20 with splicing ear 21 and the surperficial butt that is coated in distribution substrate 10 lip-deep resins 13.At this moment, the splicing ear 21 of the electrode terminal 11 of distribution substrate 10 and semiconductor chip 20 is in mutual opposed position configuration.At this, the splicing ear 21 of semiconductor chip 20 becomes the face battle array, the terminal interbody spacer without limits, but in the present invention preferably below the 100 μ m.
Under this state, distribution substrate 10 is heated to the temperature of solder powder fusion.At this moment, the viscosity of resin 13 reduces, so the solder powder after the fusion is in the state that swims in the resin 13.At this, the heating-up temperature of distribution substrate 10 is carried out under than the high temperature of the boiling point of convection current additive 12, in this heating process, and convection current additive 12 boilings that resin 13 is contained, convection current in resin.Then, solder powder after the fusion is promoted to move by the additive 12 of this convection current, the combination each other of solder powder after the fusion is carried out equably, and shown in Fig. 2 (c), the connector 22 that is made of the fusion welding of growing is integrated between wetability big electrode terminal 11 and the splicing ear 21 certainly.
At this, semiconductor chip 20 and the resin 13 surperficial butts of on distribution substrate 10, supplying with, therefore, can prevent the convection current additive 12 that seethes with excitement from resin 13 surfaces to external evaporation, consequently, can remain on the effective convection current additive 12 of convection current in the resin 13, therefore, can make solder powder after the fusion more equably from being integrated between opposed terminal.
At last,, resin 13 is solidified, semiconductor chip 20 is fixed on the distribution substrate 10, then finish flip-chip mounting body electrode terminal 11 and splicing ear 21 electrical connections if by heating distribution substrate 10.
When using thermosetting resin as resin, when solder powder was moved, curing can begin, and overcuring can not proceed to the degree of the described effect that hinders the convection current additive, and preferred consolidation is not carried out in fact.But, after the mobile end of solder powder, solidify and also can carry out.In especially preferred execution mode, the solder powder fusion is moved after, under higher temperature, solidify and carry out and finish in fact.Also have, when when being solidificated in the fusion of solder powder after the set of solder powder, carrying out under the employed heating-up temperature, also can intactly continue heating and make resin solidification.
Fig. 3 is illustrated in the described flip-chip mounting method, the chart of an example of the temperature curve in the heating process of distribution substrate 10.Transverse axis is represented the heating time of distribution substrate 10, and the longitudinal axis is represented the heating-up temperature of distribution substrate 10.
As shown in Figure 3, at first, with the distribution substrate from room temperature (T 0) be heated to the temperature (T of solder powder fusion 1).Select the material of solder powder and convection current additive to make this temperature (T 1) become the temperature of the boiling point that is higher than convection current additive 12.As solder powder, for example having adopted Sn-Ag-Cu is scolder, as convection current additive 12, adopted conventional use with organic acid during as the resin system flux solvent of active component, as T 1Be set at 150～220 ℃ for well.
With this temperature (T 1) maintenance certain hour (t 2), during this period, convection current additive 12 convection current in resin 13 of boiling thus, promotes solder powder moving in resin 13, thus fusion welding powder being combined in the resin 13 each other carried out equably.The convection velocity of the convection current additive of boiling, and each other fast in conjunction with speed of fusion welding powder are therefore as temperature (T 1) retention time (t 2), for example 10～20 seconds is sufficient.
Then, distribution substrate 10 is risen to temperature (T 2), keep certain hour t 4, during this period, make resin 13 hot curings, semiconductor chip 20 is fixed on the distribution substrate 10.When having adopted epoxy resin, for example with T as thermosetting resin 2Be set at 235～260 ℃, with retention time (t 4) be set at 10～240 seconds for well.
So, flip-chip mounting method of the present invention can sink to the bottom 10 continuous heating process by distribution and carry out electrical connection, and semiconductor chip fixing on the distribution substrate between the electrode terminal of semiconductor chip and distribution substrate simultaneously, therefore, can realize the flip-chip installation that productivity ratio is high.
Also have, adopted under the situation of solder flux when adopting convection current additive 12, the convection current of the solder flux by boiling promotes moving of fusion welding powder, except that this effect, can also expect to be formed on the effect that the lip-deep oxide-film of solder powder is removed inevitably.
In addition, as resin 13, adopt thermosetting resins such as epoxy resin, and and then heated substrate, thus, resin 13 is solidified, but also can adopt the material that solidifies with additive method, the light-cured resins such as optical polymerism polymer that for example solidify by irradiates light.When having adopted light-cured resin, the continuous heating process of distribution substrate 10 that can't be by is as shown in Figure 3 carried out flip-chip and is installed, still, because irradiation in the lump by light, can make resin solidification, therefore on the superior this point of productivity ratio, identical with the situation that has adopted thermosetting resin.
And then, in the heating process of distribution substrate 10, do not produce warpage in order to make at the growth scolder (connector) 22 that forms on the electrode terminal 11 and between the splicing ear 21, if the mode with semiconductor chip 20 non-migrations applies certain pressure to semiconductor chip 20, heat distribution substrate 10 on one side by pressurizing resin 13 on one side thus, then can form the uniform growth scolder (connector) 22 that does not have warpage.
In addition, when adopting method of the present invention to form flip-chip mounting body, preferably take following countermeasure: make the solder powder that is dispersed in the resin 13 form connector 22 from 11,21 of the terminals that is integrated into distribution substrate 10 and semiconductor chip 20, and make in the resin 13 of solder powder beyond not remaining between terminal.Especially, if the electrode terminal 21 of semiconductor chip 20 is at interval thin, then when the solder powder of growing is remaining, become the deterioration of the dielectric voltage withstand between terminal or the reason of short circuit between terminal, thereby in the decline that prevents reliability or rate of finished products, such countermeasure is important.More specifically, the exposing surface beyond the terminal of distribution substrate and/or semiconductor chip disposes the material of wetability difference of relative scolder for well.For example at such exposing surface solder-coating resist for well.
The convection current additive 12 that is contained in the resin 13 of the present invention makes the effect that the solder powder in the resin 13 moves that is dispersed in forcibly owing to having, therefore with only utilizing wetability it is compared from being integrated between terminal, can more effectively make solder powder from being integrated between terminal.Therefore, superfluous solder powder is contained in resin 13, can form needed connector 22 between terminal with an amount of solder powder.Thus, can be after having formed connector 22, in the resin beyond reducing between terminal the amount of residual solder powder, thereby can prevent problems such as the deterioration of the dielectric voltage withstand between terminal or short circuit.
The amount of the optimum of the solder powder that is contained in the resin 13 of the present invention roughly can be set based on following pointer.Also have, the amount of the optimum of solder powder for example can be set as described below like that.
If consider the volume (V of the resin combination 13 (that is, containing solder powder and convection current additive) of supply between distribution substrate 10 and semiconductor chip 20 B) in all solder powder of containing all contribute to the formation of the connector 22 between the splicing ear 21 of the electrode terminal 11 of distribution substrate 10 and semiconductor chip 20, the then cumulative volume (V of connector 22 A) and the volume (V of resin 13 B) satisfied following relational expression (1):
Figure C20058003092100201
In the formula (1), S AThe electrode terminal 11 of expression distribution substrate 10 (perhaps, the splicing ear 21 of semiconductor chip 20) the gross area, S BThe area of expression distribution substrate 10 (perhaps semiconductor chip 20).
Thus, the amount of the solder powder that contains in the resin combination 13 is represented by following formula (2):
(amount of solder powder, volume %)=V A/ V B=S A/ S B* 100 ... (2)
In fact, all solder powder might not be integrated between terminal certainly, also remain in slightly in the resin 13 sometimes.In addition, finally make between terminal at the connector 22 that forms between terminal to form the electrical connection of satisfying certain condition and get final product,, then also not necessarily need fill up between terminal with all connectors 22 as if in the scope that satisfies such condition.
Thereby the amount of the optimum of the solder powder that is contained in the resin 13 roughly can be set based on following formula (3).
(amount of solder powder, volume %)=(S A/ S B* 100)+α ... (3)
In the formula (3), parameter (α) is used to adjust the profit and loss amount of solder powder when being integrated between terminal, can be determined by various conditions.For example, when mobile low (the viscosity height) of employed resin 13, solder powder moving freely in resin 13 is impaired, so the set rate certainly of solder powder (solder powder is from being integrated into interelectrode ratio) descends.Thereby, at this moment, preferably make in advance and contain the solder powder of supplying this amount in shortage (α is positive value) and contain in resin 13.Also have, as the parameter of the set rate certainly of solder powder being given influence, in addition, the convection effects that also can consider convection current additive 12 and produced or the wetability of electrode terminal etc.For easy understanding, can after having determined the raised pad formation condition, for example obtain the value of α by trial-and-error method experimentally.
So, can determine by various conditions the parameter (α) that the profit and loss amount of solder powder when being integrated between terminal adjusted, but in order to ensure the purpose that prevents dielectric voltage withstand deterioration etc. originally, α preferably sets the scope at ± 10 volume %, more preferably is set in ± scope of 5 volume %.
The configuration of the electrode terminal 11 of distribution substrate 10 (or splicing ear 21 of semiconductor chip 20) can be a variety of way, but if the relatively for example configuration of Fig. 4 or typical electrode terminal 11 (or splicing ear 21) shown in Figure 5, obtain the amount of optimum solder powder by formula (3), then roughly become following value.
Configuration shown in Figure 4 (configuration on every side) ... 0.5～5 volume %
Configuration shown in Figure 5 (configuration of face battle array) ... 15～30 volume %
Thus, in order to form needed raised pad on the electrode 11, the solder powder of disperseing in resin 13 contains in the resin (that is the resin combination that, contains solder powder and convection current additive) 13 as constituent with the ratio of common 0.5～30 volume %, preferred 0.5～20 volume % and gets final product.
So, exactly because the action effect that the amount inhibition of solder powder is played for a small amount of convection current of convection current additive in resin 13 that disperses in resin 13 can be produced.Also have, usually, because the weight ratio of solder powder and resin or convection current additive is about 7 approximately, therefore the ratio of described 0.5～30 volume % roughly is equivalent to the ratio of 3～75 weight %.
(execution mode 3)
Below, with reference to the execution mode 3 of the various Change Examples of the described relatively execution mode 2 of description of drawings.
Fig. 6 (a) and (b) are the figure that are illustrated in the structure when a plurality of semiconductor chips (20a, 20b, 20c, 20d) are installed on the distribution substrate 10, and Fig. 6 (a) represents its vertical view, and Fig. 6 (b) expression is along the profile of the B-B ' line of Fig. 6 (a).
The flip-chip of a plurality of semiconductor chips (20a, 20b, 20c, 20d) on distribution substrate 10 installed and carried out with following method.
At first, on the zone of each semiconductor chip of the lift-launch on the distribution substrate 10 (20a, 20b, 20c, 20d), apply the resin that contains solder powder and convection current additive in advance.Then, with the splicing ear of each semiconductor chip and the opposed mode of electrode terminal separately on the distribution substrate 10, make each semiconductor chip and resin surface butt.Then, heating distribution substrate 10 makes the solder powder fusion that contains in the resin, solder powder is bonded to each other and the scolder of growing between the electrode terminal of splicing ear that is integrated into each semiconductor chip and distribution substrate.At last, make resin solidification, each semiconductor chip is fixed on the distribution substrate, install thereby finish flip-chip.
Install according to flip-chip of the present invention, when adopting thermosetting resin as resin, can carry out electrical connection, and each semiconductor chip fixing on the distribution substrate between the electrode terminal of each semiconductor chip and distribution substrate in the lump by continuous operation, thereby can realize that the high flip-chip of productivity ratio installs.Also have, in described example, resin is applied on the zone of each semiconductor chip of lift-launch on the distribution substrate 10, but also can be with whole the coating of resin to distribution substrate 10.
(execution mode 4)
Another flip-chip mounting method of semiconductor chip then, is described with reference to Fig. 7 (a)～(e).
At first, shown in Fig. 7 (a), supply with the resin 13 that contains solder powder (not shown) and convection current additive 12 having on the distribution substrate 10 of a plurality of electrode terminals 11.Then, shown in Fig. 7 (b), make dull and stereotyped 14 with the surperficial butt of the resin of on distribution substrate 10, supplying with 13.Then, under this state, distribution substrate 10 is heated to the temperature of solder powder fusion.At this, the heating-up temperature of distribution substrate 10 is carried out under the temperature of the boiling point that is higher than convection current additive 12, the preferably convection current in resin 13 of the convection current additive 12 of boiling.In this heating process, make solder powder after the fusion from being integrated on the electrode terminal 11 of distribution substrate 10, thus, solder ball 16 is formed on the electrode terminal 11.
At this, make dull and stereotyped 14 with resin 13 surperficial butts be for the convection current additive 12 that suppresses boiling a little from the surface of resin 13 to external evaporation.Thus, can maintain the additive 12 of convection current in the resin effectively, can promote that therefore the solder powder after the fusion moves in wider scope.
Then, shown in Fig. 7 (c), after flat board 14 taken, remove resin 13, thus, on the electrode terminal 11 of distribution substrate 10, form solder bump 16 from the surface of distribution substrate 10.At this, after flat board 14 taken, cull 13 was also harmless, but after raised pad formed, small sometimes solder powder remained on the resin 13 as residue, therefore if consider the aspect of reliability, then preferably resin 13 was removed with the residue of solder powder.
Then, shown in Fig. 7 (d), the semiconductor chip 20 that will have a plurality of splicing ears 21 carries on distribution substrate 10 in the mode of splicing ear 21 and raised pad 16 correspondences.Then, semiconductor chip 20 is pushed to raised pad 16, simultaneously distribution substrate 10 is heated to the temperature of raised pad 16 fusions, make the contact-making surface alloying of splicing ear 21 and raised pad 16, thus, the electrode terminal 11 of distribution substrate 10 and the splicing ear 21 of semiconductor chip 20 are electrically connected.
At last, shown in Fig. 7 (e), after injecting underfilling material 23 between distribution substrate 10 and the semiconductor chip 20, heating distribution substrate 10 thus, makes underfilling 23 hot curings, installs thereby finish flip-chip.
In the flip-chip mounting method of present embodiment, as described in can't illustrating as enforcement mode 3, carry out fixing on the distribution substrate of electrical connection between the electrode terminal of semiconductor chip and distribution substrate and semiconductor chip simultaneously with continuous heating process, but, owing to can confirm whether raised pad is formed on the electrode terminal of distribution substrate reliably by visual, therefore, can remove in advance raised pad form bad, thereby the rate of finished products of the flip-chip that can improve semiconductor chip thereafter in installing.
In addition, be accompanied by the multitube pinization of semiconductor chip, the face battle array structure of the splicing ear of semiconductor chip becomes main flow, when still being installed in a plurality of semiconductor chips on the distribution substrate, also comprises the semiconductor chip of the splicing ear around having sometimes.
Flip-chip mounting method of the present invention since utilize solder powder from consolidation function, therefore in order to carry out uniformly from set, the configuration of preferred electrode is uniformly, under this meaning, we can say that the semiconductor chip of face battle array is suitable for being suitable for flip-chip mounting method of the present invention.
But if the semiconductor chip of the splicing ear around having is also adopted Fig. 8 and method shown in Figure 9, then the semiconductor chip with the face battle array is identical, can both carry out flip-chip with having good uniformity and install.
Fig. 8 is the vertical view of distribution substrate 10, the process profile that Fig. 9 (a)～(c) expression flip-chip is installed.
As shown in Figure 8, at the periphery of distribution substrate 10, be formed with electrode terminal 11 in the position corresponding with the splicing ear of on every side semiconductor chip.And the resin 13 that will contain solder powder and convection current additive is supplied with to the zone of the middle section 30 of removing the distribution substrate 10 that is not formed with electrode terminal 11, makes it cover the electrode terminal 11 (Fig. 9 (a)) that forms on the distribution substrate 10.
Then, shown in Fig. 9 (b), make semiconductor chip 20 and resin 13 butts, and heating distribution substrate 10, thus, shown in Fig. 9 (c), obtain the flip-chip mounting body that the electrode terminal 11 of the splicing ear 21 of semiconductor chip 20 and distribution substrate 10 is electrically connected via connector 22.
As shown in Figure 8, electrode terminal 11 is the state that relative resin 13 disposes equably with splicing ear 21, thus the solder powder after the fusion can be equably from being integrated between terminal, thereby identical with the face battle array, can carry out flip-chip with having good uniformity and install.
Also have, shown in Fig. 9 (c), there is not resin 13 in the middle section 30 of flip-chip mounting body between semiconductor chip 20 and distribution substrate 10, but considers from the aspect of other reliabilities such as adhesive strength, can be separately with landfill middle sections 30 such as other resins yet.
In addition, though with resin 13 to 10 whole supplies of distribution substrate, solder powder also is integrated into by convection current on the terminal certainly, effect of the present invention is not thus lost, and at this moment, does not need to use again other resin landfill middle sections 30.
More than, utilize preferred implementation that the present invention has been described, but these execution modes can carry out various changes.For example, as the resin that contains solder powder and convection current additive, illustration thermosetting resin, light-cured resin etc., but also can adopt they and with the resin of type resin or 2 liquid mixed types.In addition, semiconductor chip is not limited to Si semiconductor, can certainly be suitable for the semiconductor chip of compound semiconductor.
Described the present invention comprises following mode:
First mode: a kind of flip-chip mounting method, configuration has the semiconductor chip of a plurality of splicing ears with the distribution substrate with a plurality of electrode terminals is opposed for it, and be electrically connected the described electrode terminal of described distribution substrate and the described splicing ear of described semiconductor chip, this flip-chip mounting method is characterised in that, comprising:
(1) on the surface with described electrode terminal of described distribution substrate, supplies with the operation of the resin contain solder powder and convection current additive;
(2) make described semiconductor chip be connected to operation on the described resin surface;
(3) described distribution substrate is heated to the operation of the temperature of described solder powder fusion;
(4) after described heating process, make the operation of described resin solidification,
When the described distribution substrate of heating (3), form the connector that described electrode terminal and described splicing ear are electrically connected, in addition, when making described resin solidification (4), described semiconductor chip is fixed on the described distribution substrate.
Second mode: the described flip-chip mounting method of first mode as described is characterized in that the operation (3) of heating described substrate under than the high temperature of the boiling point of described convection current additive.
Third Way: the described flip-chip mounting method of second mode as described is characterized in that convection current additive convection current in described resin of (3) described boiling when heating described substrate.
Cubic formula: the described flip-chip mounting method of arbitrary mode in first to three mode as described is characterized in that when heating described substrate (3), described solder powder is with molten condition convection current in described resin.
The 5th mode: the described flip-chip mounting method of arbitrary mode in first to fourth mode as described, it is characterized in that described convection current additive is made of the materials at least a or more than two kinds that are selected from the group that is made of solvent, glycerol, wax, isopropyl alcohol, butyl acetate, butyl carbitol and ethylene glycol.
The 6th mode: the described flip-chip mounting method of arbitrary mode in first to five mode as described is characterized in that the heating of described substrate (3) is carried out under the temperature that the viscosity of described resin descends.
The 7th mode: the described flip-chip mounting method of arbitrary mode in first to six mode as described, it is characterized in that, when heating described substrate (3), described semiconductor chip is applied certain pressure, push described resin thus, heat described substrate simultaneously.
The formula from all directions: the described flip-chip mounting method of arbitrary mode in first to seven mode as described is characterized in that described resin is made of thermosetting resin.
The 9th mode: the first described flip-chip mounting method of formula from all directions as described is characterized in that the curing of described resin (4) is undertaken by substrate being heated to the temperature higher than the heating process of described distribution substrate.
The tenth mode: the described flip-chip mounting method of arbitrary mode in first to seven mode as described, it is characterized in that described resin is made of light-cured resin, the curing process of described resin (4) is by carrying out to described resin irradiates light.
The 11 mode: the described flip-chip mounting method of arbitrary mode in first to ten mode as described, it is characterized in that, be connected on the described resin surface by making a plurality of semiconductor chips, should be installed on the described distribution substrate by a plurality of semiconductor chip flip-chips.
The 12 mode: the described flip-chip mounting method of arbitrary mode in first to 11 mode as described is characterized in that described solder powder contains in described resin with the ratio of 0.5～30 volume %.
The 13 mode: a kind of flip-chip mounting method, it is characterized in that, comprising:
(a) preparation has the operation of the distribution substrate of a plurality of electrode terminals;
(b) on described distribution substrate, supply with the operation of the resin contain solder powder and convection current additive;
(c) described distribution substrate is heated to the temperature of described solder powder fusion, on described electrode terminal, forms the operation of raised pad;
(d) semiconductor chip that will have a plurality of splicing ears carries operation on described distribution substrate in the mode of described splicing ear and described raised pad correspondence;
(e) described distribution substrate is heated to the operation of the temperature of described raised pad fusion,
By the heating (e) of described distribution substrate, form the connector that the described splicing ear with the described electrode terminal of described distribution substrate and described semiconductor chip is electrically connected.
The tenth cubic formula: the described flip-chip mounting method of the 13 mode as described, it is characterized in that, when on described electrode terminal, forming raised pad (c), heat the boiling point that described distribution substrate temperature is higher than described convection current additive.
The 15 mode: the described flip-chip mounting method of the 13 or ten cubic formulas as described, it is characterized in that, when on described electrode terminal, forming raised pad (c), convection current additive convection current in described resin of described boiling.
The 16 mode: the described flip-chip mounting method of arbitrary mode in the 13 to 15 mode as described, it is characterized in that, when on described electrode terminal, forming raised pad (c), after forming raised pad, remove described resin from described distribution substrate.
The 17 mode: a kind of flip-chip mounting body, it is electrically connected the described electrode terminal of described distribution substrate and the described splicing ear of described semiconductor chip by the flip-chip mounting method of arbitrary mode in described the first to the 16 mode.
(industrial utilizability)
According to the present invention, can provide a kind of that install applicable to the flip-chip of LSI of future generation, living The flip-chip mounting method that productive rate and reliability are high and flip-chip mounting body.
(cross-reference of related application)
The application is with Japan's patent application 2004-267919 number (applying date: on September 15th, 2004, denomination of invention: " flip-chip mounting method and flip-chip mounting body ") and Japan's patent application 2005-091347 number (applying date: on March 28th, 2005, denomination of invention: " flip-chip mounting method and flip-chip mounting body ") be the priority on the Treaty of Paris.The disclosed full content of the application is the content of priority and being recorded in this specification by reference all.

Claims (16)

1. flip-chip mounting method, configuration has the semiconductor chip of a plurality of splicing ears with the distribution substrate with a plurality of electrode terminals is opposed, and be electrically connected the described electrode terminal of described distribution substrate and the described splicing ear of described semiconductor chip, this flip-chip mounting method is characterised in that, comprising:
(1) on the surface with described electrode terminal of described distribution substrate, supplies with the operation of the resin contain solder powder and convection current additive;
(2) make described semiconductor chip be connected to operation on the described resin surface;
(3) described distribution substrate is heated to the operation of the temperature of described solder powder fusion;
(4) after described heating process, make the operation of described resin solidification,
In the heating process (3) of described distribution substrate, described solder powder forms the connector with described electrode terminal and the electrical connection of described splicing ear, in addition, in the curing process (4) of described resin, described semiconductor chip is fixed on the described distribution substrate.
2. flip-chip mounting method as claimed in claim 1 is characterized in that, heats the operation (3) of described substrate and carries out under than the high temperature of the boiling point of described convection current additive.
3. flip-chip mounting method as claimed in claim 2 is characterized in that, in the operation (3) of the described substrate of heating, and convection current additive convection current in described resin of described boiling.
4. flip-chip mounting method as claimed in claim 1 is characterized in that, in the operation (3) of the described substrate of heating, described solder powder is with molten condition convection current in described resin.
5. flip-chip mounting method as claimed in claim 1 is characterized in that, described convection current additive is made of at least a material that is selected from the group that is made of glycerol, wax, isopropyl alcohol, butyl acetate, butyl carbitol and ethylene glycol.
6. flip-chip mounting method as claimed in claim 1 is characterized in that, heats the operation (3) of described substrate and carries out under the temperature of the viscosity decline of described resin.
7. flip-chip mounting method as claimed in claim 1 is characterized in that, in the operation (3) of the described substrate of heating, described semiconductor chip is applied certain pressure, pushes described resin thus, heats described substrate simultaneously.
8. flip-chip mounting method as claimed in claim 1 is characterized in that described resin is made of thermosetting resin.
9. flip-chip mounting method as claimed in claim 8 is characterized in that, the curing process of described resin (4) is undertaken by substrate being heated to the temperature higher than the heating process of described distribution substrate.
10. flip-chip mounting method as claimed in claim 1 is characterized in that described resin is made of light-cured resin, and the curing process of described resin (4) is by carrying out to described resin irradiates light.
11. flip-chip mounting method as claimed in claim 1 is characterized in that, is connected on the described resin surface by making a plurality of semiconductor chips, should be installed on the described distribution substrate by a plurality of semiconductor chip flip-chips.
12. flip-chip mounting method as claimed in claim 1 is characterized in that, described solder powder contains in described resin with the ratio of 0.5～30 volume %.
13. a flip-chip mounting method is characterized in that, comprising:
(a) preparation has the operation of the distribution substrate of a plurality of electrode terminals;
(b) on described distribution substrate, supply with the operation of the resin contain solder powder and convection current additive;
(c) described distribution substrate is heated to the temperature of described solder powder fusion, on described electrode terminal, forms the operation of raised pad;
(d) semiconductor chip that will have a plurality of splicing ears carries operation on described distribution substrate in the mode of described splicing ear and described raised pad correspondence;
(e) described distribution substrate is heated to the operation of the temperature of described raised pad fusion,
By the heating process (e) of described distribution substrate, form the connector that the described splicing ear with the described electrode terminal of described distribution substrate and described semiconductor chip is electrically connected by described solder powder.
14. flip-chip mounting method as claimed in claim 13 is characterized in that, in the operation (c) that raised pad is formed on the described electrode terminal, heats the boiling point that described distribution substrate temperature is higher than described convection current additive.
15. flip-chip mounting method as claimed in claim 13 is characterized in that, in the operation (c) that raised pad is formed on the described electrode terminal, and convection current additive convection current in described resin of described boiling.
16. flip-chip mounting method as claimed in claim 13 is characterized in that, in the operation (c) that raised pad is formed on the described electrode terminal, after forming raised pad, removes described resin from described distribution substrate.
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JP5819026B1 (en) * 2014-02-24 2015-11-18 積水化学工業株式会社 Method for manufacturing connection structure

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Publication number Priority date Publication date Assignee Title
JPH06125169A (en) * 1992-10-13 1994-05-06 Fujitsu Ltd Pre-soldering method
JPH0927516A (en) * 1995-07-12 1997-01-28 Nippondenso Co Ltd Connection structure of electronic component
JPH11186334A (en) * 1997-12-25 1999-07-09 Toshiba Corp Semiconductor mounting apparatus, manufacture thereof and anisotropically conductive material
JP2002026070A (en) * 2000-07-04 2002-01-25 Toshiba Corp Semiconductor device and its manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06125169A (en) * 1992-10-13 1994-05-06 Fujitsu Ltd Pre-soldering method
JPH0927516A (en) * 1995-07-12 1997-01-28 Nippondenso Co Ltd Connection structure of electronic component
JPH11186334A (en) * 1997-12-25 1999-07-09 Toshiba Corp Semiconductor mounting apparatus, manufacture thereof and anisotropically conductive material
JP2002026070A (en) * 2000-07-04 2002-01-25 Toshiba Corp Semiconductor device and its manufacturing method

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