CN100428587C - Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser - Google Patents

Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser Download PDF

Info

Publication number
CN100428587C
CN100428587C CNB2006101480711A CN200610148071A CN100428587C CN 100428587 C CN100428587 C CN 100428587C CN B2006101480711 A CNB2006101480711 A CN B2006101480711A CN 200610148071 A CN200610148071 A CN 200610148071A CN 100428587 C CN100428587 C CN 100428587C
Authority
CN
China
Prior art keywords
laser
crystal
lulf
thulium
doped lithium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006101480711A
Other languages
Chinese (zh)
Other versions
CN101039012A (en
Inventor
赵媛媛
陈卫标
侯霞
乔亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Optics and Fine Mechanics of CAS
Shanghai Micro Electronics Equipment Co Ltd
Original Assignee
Shanghai Institute of Optics and Fine Mechanics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Optics and Fine Mechanics of CAS filed Critical Shanghai Institute of Optics and Fine Mechanics of CAS
Priority to CNB2006101480711A priority Critical patent/CN100428587C/en
Publication of CN101039012A publication Critical patent/CN101039012A/en
Application granted granted Critical
Publication of CN100428587C publication Critical patent/CN100428587C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Lasers (AREA)

Abstract

The invention provides a crystal laser device side pumped by laser diode and employing a fluorinated lutetium-lithium crystal dual-doped with thulium and holmium, which is characterized by adopting laser diode array side pump; a laser resonance cavity consists of a back reflection mirror and a front reflection mirror between which Tm:Ho:LuLF crystal is disposed. The invention has compact structure, low pumping threshold value, large pulse energy and the laser output wavelength is approximately 2 mum m, and the pulse repetition frequency is adjustable, so that the invention has widely application prospect on the aspects of laser ranging, coherent Doppler wind-finding radar and so on.

Description

Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser
Technical field
The present invention relates to laser, particularly a kind of laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser, the pump mode of especially whole cavity structure and semiconductor diode.
Background technology
Nd:CaWO with scheelite-type structure 4Crystal is a crystal of realizing the output of room temperature continuous laser the earliest, and lithium yttrium fluoride (being designated hereinafter simply as YLF) crystal is after the white tungstic acid calcium crystal, the laser host crystal of great use that screens from the scheelite-type structure crystalline material so far.It has the tetragonal crystal system structure, and trivalent rare earth ions can replace Y 3+Case, and need not charge compensation, so all realized the output of polarization laser after a lot of rare earth ion mixes.As thulium Tm 3+With holmium Ho 3+When being entrained in the YLF crystal simultaneously, can produce the laser of 2 mum wavelengths.
Referring to Fig. 1, Tm 3+And Ho 3+It is as follows to mix the process that produces 2 mum wavelengths altogether:
By wavelength be the pump light of 792nm particle from Tm 3+: 3H 6Attitude is energized into Tm 3+: 3H 4Attitude; Work as Tm 3+Doping content when surpassing certain value, the transverse relaxation process will take place, i.e. Tm 3+: 3H 4The downward transition radiation of attitude particle, Tm simultaneously 3+: 3H 6The attitude particle upwards excites, final two particle-stabilised at Tm 3+: 3F 4Under the attitude; Because Tm 3+: 3F 4Attitude and Ho 3+: 5I 7It is very near that attitude is leaned on, and both carry out energy exchange easily; Tm 3+: 3F 4Attitude is to Ho 3+: 5I 7The effective energy of attitude shifts and makes Ho 3+At 5I 7The attitude energy level has significantly and yards up, and finally causes Ho 3+From 5I 7Attitude is to 5I 8The attitude transition has just produced 2 μ m laser.
Mix in the crystal two, serious last transition loss and energy counter-rotating move and make energy of lasers and average power amplification become difficult, and these effects produce big heat load, have limited laser activity.But since YLF be a low phonon can material, so have many good qualities with other matrix phase ratios, it on transition loss little, have good anti-optical damage ability, the birefringence that does not have heat to bring out is so it is relatively good to export the performance of laser.
Referring to Fig. 2, existing Tm, Ho:YLF laser comprise laser diode 21, circle lens 22, post lens 23, circle lens 24, Tm, Ho:YLF crystal 25, refrigerator 26 and outgoing mirror 27.By power is that the laser of the 792nm wavelength that sends of the laser diode of 3W is assembled through the circle lens 22 of 8mm focal length, and the post lens 23 by the 100mm focal length carry out shaping then, and the circle lens 24 through 50mm focuses on Tm, the surface of Ho:YLF crystal at last.Pump light can focus in the scope of 100 * 100 μ m2 through after such coupling.The coupling efficiency of this beam shaping system can reach 91%.The front surface of crystal and output coupling mirror constitute a flat-concave cavity, make whole laser structure become very simple compact.This laser system obtains the output of wavelength 2.067 μ m, and power is 393mW, and the light optical efficiency is 14%.
As seen, the laser of this end pumping mode can not obtain the output of high power laser, is far from being enough to a lot of application.
Summary of the invention
The purpose of this invention is to provide a kind of laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser, export with the 2 μ m laser of realizing big pulse energy, and the claimed structure compactness.
Technical solution of the present invention is as follows:
A kind of laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser, comprise diode laser matrix, coupled system and a laserresonator through the preliminary coupling of microtrabeculae lens, be characterized in: the post lens that described coupled system is provided with by two quadratures are formed, the quick shaft direction of the corresponding diode laser matrix of one of them post lens, the slow-axis direction of the corresponding diode laser matrix of another post lens; Described laserresonator is made up of back mirror and front mirror, the middle Tm:Ho:LuLF crystal of placing, back mirror plates the film that is all-trans to 2.053 mum wavelength light, front mirror is an outgoing mirror, plate part transmission film to 2.053 mum wavelength light, a side of described Tm:Ho:LuLF crystal plates the anti-reflection film to pump light, another side on the other side plates the film that is all-trans to pump light, and the laser that described diode laser matrix sends shines on the side with pump light anti-reflection film of described Tm:Ho:LuLF crystal after the coupled system coupling.
Described laserresonator is the average chamber of chamber length between 80~100mm.
Described diode laser matrix sends the laser that centre wavelength is 792nm through the diode laser matrix of the preliminary coupling of microtrabeculae lens.
Described Tm:Ho:LuLF crystal is the crystal lath.
LD Pumped Tm of the present invention: the Ho:LuLF crystal laser, used high-power high-efficiency laser diode, be used for the coupled system of profile pump and the resonant cavity of simple structure, realized the pulse output of all solid state 2 μ m laser.The present invention is based in the Tm:Ho:LuLF crystal Ho ion from 5I 7Attitude is to 5I 8The attitude transition produces the laser of 2.053 μ m, thereby realizes the Tm:Ho:LuLF laser operation under the domestic LD pumping first.
Compare with prior art, the present invention has the following advantages:
1, simple and easy efficiently cavity structure makes laser output easier;
2, compare with existing Tm:Ho:YLF laser, the absorption coefficient of Tm:Ho:LuLF is big, so pumping threshold reduces; And LuLF is than little many of the last transition loss of YLF, so the output of easier realization high power laser;
3, the use of high-power laser diode and profile pump mode thereof make pump light can pumping to the various piece and the direction of operation material, can make full use of the medium active region; Pumping is more even, and thermal effect is less; Can in the length range of operation material, add more laser diode, therefore obtain high power laser output easily;
4, the output of the big pulse energy of 2 μ m laser is having important application prospects aspect remote sensing and the optical communication, for range finder using laser, coherent Doppler wind-observation radar provide desirable light source.
The present invention is described further below in conjunction with accompanying drawing and embodiment.
Description of drawings
Fig. 1 is Tm, and Ho mixes the basic level structure of system altogether.
Fig. 2 is open article (Xinlu Zhang, Youlun Ju, Yuezhu Wang.Diode-end-pumped room temperature Tm, Ho:YLF lasers.J.OPTICS EXPRESS, 2005,13 (11): the laser structure schematic diagram 4056~4063).
Fig. 3 is a structural representation of the present invention.
Embodiment
See also Fig. 3 earlier, Fig. 3 is the structural representation of the laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser of the present invention, as seen from the figure, the thulium/holmium double doped lithium lutetium fluoride crystal laser that the present invention is laser diode side pumped, comprise diode laser matrix 1, coupled system 2 and a laserresonator 3 through the preliminary coupling of microtrabeculae lens, described coupled system 2 is made up of the post lens 201,202 that two quadratures are provided with, and the fast axle and the slow-axis direction of these 2 corresponding respectively diode laser matrixs 1 of post lens are coupled; Described laserresonator 3 is made up of back mirror 301 and front mirror 303, Tm:Ho:LuLF crystal 3 02 has been placed in the centre, back mirror 301 plates the film that is all-trans to 2.053 mum wavelength light, front mirror 303 is outgoing mirrors, plate part transmission film to 2.053 mum wavelength light, a side of described Tm:Ho:LuLF crystal 3 02 plates the anti-reflection film to pump light, another side on the other side plates the film that is all-trans to pump light, and the centre wavelength that described diode laser matrix 1 sends is that the light of 792nm shines on the side with pump light anti-reflection film of described Tm:Ho:LuLF crystal 3 02 after coupled system 2 couplings as pump light.
Referring to Fig. 3, be example with diode laser matrix profile pump and average chamber:
The Tm:Ho:LuLF crystal is through directed cutting and optics processing, and length is 5mm, and the end face size is 3mm * 3mm.
Described laserresonator is average chamber, and the laser resonance cavity length is between 80-100mm.The center output wavelength is that the diode laser matrix of 792nm is exported through the microtrabeculae collimated and through post lens focus system 2, its center pillar focal length of lens is about 40mm, and the 792nm laser focusing is to Tm:Ho:LuLF crystal 3 02 afterwards.The length of laser crystal 302 is 5mm, and the content of Tm is 6atm%, and the content of Ho is 0.5atm%, and both ends of the surface are plated 2.053 μ m anti-reflection films, and the focus of focus lens system is in the middle of crystal.Back mirror is to the light total reflection of 2.053 mum wavelengths, and the film that front mirror plated is to only 80% reflection of 2.053 mum wavelengths, and whole system just can form laser generation like this.Through just obtaining the laser pulse output of 2.053 μ m behind continuous optical adjustment and the collimation, single pulse energy can reach more than the 10mJ.
In sum, compact conformation of the present invention, laser output wavelength are near 2 μ m, and pulse repetition frequency is adjustable, single pulse energy is big, therefore at aspects such as laser ranging, coherent Doppler wind-observation radars wide application prospect are arranged all.

Claims (4)

1, a kind of laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser, comprise diode laser matrix (1), coupled system (2) and a laserresonator (3) through the preliminary coupling of microtrabeculae lens, it is characterized in that: described coupled system (2) is made up of the post lens (201,202) that two quadratures are provided with, the quick shaft direction of the corresponding diode laser matrixs of one of them post lens (1), the slow-axis direction of the corresponding diode laser matrixs of another post lens (1); Described laserresonator (3) is made up of back mirror (301) and front mirror (303), Tm:Ho:LuLF crystal (302) has been placed in the centre, back mirror (301) plates the film that is all-trans to 2.053 mum wavelength light, front mirror (303) is an outgoing mirror, plate part transmission film to 2.053 mum wavelength light, a side of described Tm:Ho:LuLF crystal (302) plates the anti-reflection film to pump light, another side on the other side plates the film that is all-trans to pump light, and the laser that described diode laser matrix (1) sends shines on the side with pump light anti-reflection film of described Tm:Ho:LuLF crystal (302) after coupled system (2) coupling.
2, thulium/holmium double doped lithium lutetium fluoride crystal laser according to claim 1 is characterized in that described laserresonator (3) is the average chamber of chamber length between 80~100mm.
3, thulium/holmium double doped lithium lutetium fluoride crystal laser according to claim 1 is characterized in that described diode laser matrix (1) sends the laser that centre wavelength is 792nm.
4,, it is characterized in that described Tm:Ho:LuLF crystal (302) is the crystal lath according to each described thulium/holmium double doped lithium lutetium fluoride crystal laser of claim 1 to 3.
CNB2006101480711A 2006-12-27 2006-12-27 Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser Expired - Fee Related CN100428587C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2006101480711A CN100428587C (en) 2006-12-27 2006-12-27 Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2006101480711A CN100428587C (en) 2006-12-27 2006-12-27 Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser

Publications (2)

Publication Number Publication Date
CN101039012A CN101039012A (en) 2007-09-19
CN100428587C true CN100428587C (en) 2008-10-22

Family

ID=38889733

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006101480711A Expired - Fee Related CN100428587C (en) 2006-12-27 2006-12-27 Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser

Country Status (1)

Country Link
CN (1) CN100428587C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9306365B2 (en) 2012-08-03 2016-04-05 Daniel Kopf Pump device for pumping an amplifying laser medium

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102820609A (en) * 2012-08-27 2012-12-12 长春理工大学 End and side mixed pumping Tm laser
CN103779775B (en) * 2013-12-27 2014-12-10 中国科学院理化技术研究所 Thulium-and-holmium-doped laser, laser gain medium and wavelength regulating method
CN103820855B (en) * 2014-02-20 2016-11-16 宁波大学 A kind of Tb for white light LEDs3+/ Sm3+doping LiLuF4monocrystal and preparation method thereof
CN104466643A (en) * 2014-12-11 2015-03-25 中国工程物理研究院应用电子学研究所 Semiconductor laser pumping homogenization coupling device
CN107465067A (en) * 2017-08-17 2017-12-12 北京镭测科技有限公司 Solid micro-slice laser
CN108418089A (en) * 2018-05-14 2018-08-17 南京晓庄学院 A kind of high power single longitudinal mode mixes holmium solid state laser
CN113258424B (en) * 2021-05-11 2022-09-27 天津工业大学 Dual-wavelength pulse synchronous Tm, Ho, LLF passive Q-switched solid laser
CN114552355B (en) * 2022-01-27 2023-06-09 中国科学院福建物质结构研究所 Polarization separation composite cavity holmium laser

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742632A (en) * 1995-09-07 1998-04-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ho:LuLF and Ho:Tm:LuLF laser materials
EP1331709A1 (en) * 2002-01-28 2003-07-30 Fujifilm Electronic Imaging Limited Laser diode collimating system
CN2750531Y (en) * 2004-09-30 2006-01-04 北京国科世纪激光技术有限公司 Side-pumping high power laser device
CN201001003Y (en) * 2006-12-27 2008-01-02 中国科学院上海光学精密机械研究所 Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742632A (en) * 1995-09-07 1998-04-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ho:LuLF and Ho:Tm:LuLF laser materials
EP1331709A1 (en) * 2002-01-28 2003-07-30 Fujifilm Electronic Imaging Limited Laser diode collimating system
CN2750531Y (en) * 2004-09-30 2006-01-04 北京国科世纪激光技术有限公司 Side-pumping high power laser device
CN201001003Y (en) * 2006-12-27 2008-01-02 中国科学院上海光学精密机械研究所 Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9306365B2 (en) 2012-08-03 2016-04-05 Daniel Kopf Pump device for pumping an amplifying laser medium

Also Published As

Publication number Publication date
CN101039012A (en) 2007-09-19

Similar Documents

Publication Publication Date Title
CN100428587C (en) Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser
Schellhorn A comparison of resonantly pumped Ho: YLF and Ho: LLF lasers in CW and Q-switched operation under identical pump conditions
Lü et al. Dual-wavelength laser operation at 1064 and 914 nm in two Nd: YVO 4 crystals
Gao et al. Pulsed 456 nm deep‐blue light generation by acoustooptical Q‐switching and intracavity frequency doubling of Nd: GdVO4
CN210201151U (en) All-solid-state green laser
CN107046222B (en) Inner cavity optical parametric oscillator for realizing similar dual-wavelength output
CN103618205A (en) Full-solid-state single longitudinal mode yellow light laser
CN101764348B (en) Semiconductor pump ultraviolet laser
CN103811990A (en) Terahertz parameter source and application thereof on the basis of potassium titanium oxide arsenate crystals
CN106058632B (en) A kind of adjustable passive Q-adjusted raman laser system of pulse energy based on bonded crystals
CN113258424B (en) Dual-wavelength pulse synchronous Tm, Ho, LLF passive Q-switched solid laser
CN113078534B (en) Intracavity cascade pump laser based on composite structure gain medium
CN201001003Y (en) Laser diode side pumped thulium/holmium double doped lithium lutetium fluoride crystal laser
Wang et al. Continuous-wave and pulsed operation of a ring laser cavity with the Ho: YLF and Ho: YAG crystals
CN101276984A (en) Micro-chip laser with safety laser pulse output to human eye
CN102801102A (en) 3.9 mu m mid infrared laser
Scholle et al. In-band pumping of high-power Ho: YAG lasers by laser diodes at 1.9 µm
Zhang et al. High efficient continuous wave operation of diode-double-passing-pumped Tm: YAP laser
CN101431210A (en) Micro-chip type dual-cavity laser
Zhu et al. All-solid-state dual end pumped Nd: YAG/LBO yellow green laser with 10.8 W output power at 561 nm
CN109301684A (en) The solid state laser that diode is pumped in advance-normally pumped
Shu et al. Diode-side-pumped AO Q-switched Tm, Ho: LuLF laser
Lü et al. 1064 nm Nd: YAG laser intracavity pumped at 946 nm
CN103794293A (en) Terahertz parameter source based on potassium titanyl phosphate crystal and application thereof
CN201766283U (en) Passive Q-switching testing facility for semi-conductor pump solid lasers

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081022

Termination date: 20111227