CN100392147C - Pair target twin magnetic controlled sputtering ion plating deposition device - Google Patents
Pair target twin magnetic controlled sputtering ion plating deposition device Download PDFInfo
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- CN100392147C CN100392147C CNB2005100191616A CN200510019161A CN100392147C CN 100392147 C CN100392147 C CN 100392147C CN B2005100191616 A CNB2005100191616 A CN B2005100191616A CN 200510019161 A CN200510019161 A CN 200510019161A CN 100392147 C CN100392147 C CN 100392147C
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Abstract
The present invention discloses a pair of target twin magnetically controlled sputtering ion plating deposition device which comprises a vacuum chamber. The vacuum chamber is provided with a vacuum pumping port. Magnetically controlled targets and a workpiece holder are arranged in the vacuum chamber. The magnetically controlled targets are arranged in pairs. Each pair of magnetically controlled targets is provided with power by an intermediate frequency power supply. The workpiece holder is arranged between a pair of targets. Because the present invention uses the structure and each pair of magnetically controlled targets is provided with power by the intermediate frequency power supply, plasmas among the pair targets are distributed uniformly and compactly. Thereby, film plating efficiency, film plating capability and ionic plating effect are enhanced, film plating cost is reduced, and coating uniformity is improved. Simultaneously, one power supply controls one pair of targets, which causes the film plating process to be more easily controlled.
Description
Technical field
The present invention relates to a kind ofly to target twin magnetic controlled sputtering ion plating deposition device, belong to the thin-film material technical field, this device has that plated film efficient height, cost are low, good uniformity, be easy to characteristics such as control.
Background technology
At present external twin target all uses balance magnetic field, poisons and spark phenomenon though improved sputtering yield and well solved target, for complex-shaped workpiece, because its plasma body is constrained near the target surface, can not reach good ion plating effect.The layout of existing twin magnetron sputtering device target is generally 180 degree or 120 degree are arranged, and is far away to the target spacing, is unfavorable for the plated film of complex part.
Summary of the invention
The object of the present invention is to provide a kind ofly to target twin magnetic controlled sputtering ion plating deposition device, this device has plated film ability and ion plating effect preferably.
For achieving the above object, technical scheme provided by the invention is: a kind of to target twin magnetic controlled sputtering ion plating deposition device, comprise vacuum chamber, vacuum chamber is provided with vacuum orifice, be provided with the bearing of magnetic controlling target and work rest and supporting workpiece frame in the vacuum chamber, magnetic controlling target is the setting of target subtend, and every pair of magnetic controlling target is powered by an intermediate frequency power supply, and work rest is between to target.
Above-mentioned every pair of magnetic controlling target magnetic field arranged direction is opposite, forms closed; Each independent target magnetic field layout type all is a unbalanced magnetic field simultaneously.
Be provided with four pairs of magnetic controlling targets in the above-mentioned vacuum chamber, wherein metallic target is a pair of, and remaining three pairs is graphite target.
Be provided with heating unit in the above-mentioned vacuum chamber.
Above-mentioned is the ion-plating deposition district to the space between the target, all to the looping zone, ion-plating deposition district between the target; Be provided with and drive bearing and rotate and make the driving mechanism that work rest moves along annular region and drive the driving mechanism that work rest rotates around the work rest axle.
The present invention is owing to adopt said structure, every pair of magnetic controlling target is powered by an intermediate frequency power supply, make even, fine and close to plasma distribution between the target, thereby improve plated film efficient, plated film ability and ion plating effect, reduce coating cost, improve coating uniformity, simultaneously, control a pair of target by a power supply, make coating process be easier to control.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the A-A view of Fig. 1.
Embodiment
Below in conjunction with accompanying drawing technical scheme of the present invention is described further:
As shown in Figure 1 and Figure 2, the present invention includes vacuum chamber 1, vacuum chamber 1 is provided with vacuum orifice 12, is provided with magnetic controlling target 8 and work rest 2 in the vacuum chamber 1, and magnetic controlling target 8 is the setting of target subtend, and every pair of magnetic controlling target is powered by an intermediate frequency power supply, and work rest 2 is between to target.In vacuum chamber 1, one has 8 magnetic controlling targets, 4 targets in the inside, 4 targets in outside, over against two target magnetic field arranged direction opposite, form closed; Each independent target magnetic field layout type all is a unbalanced magnetic field simultaneously.Wherein 4 pairs of targets are supplied with by intermediate frequency power supply, form twin to target.By such layout type, the magnetic field of interior external target is plasma body constraining between the target tightly, plasma density improves greatly, when various complex parts are carried out plated film, workpiece is immersed in the middle of the plasma body, the effect highly significant of ion bombardment, the homogeneity of coating has obtained good assurance.
Metallic target is a pair of in four pairs of magnetic controlling targets, and remaining three pairs is graphite target.Wherein metallic target mainly is to mix in process of plating, so that reduce the internal stress of coating and improve its sticking power.What of controlled doping amount can also change the hardness and the wear resisting property of coating in addition by.Because doping is generally at atomic percentage conc below 10%, so adopt pair of metal target and three pairs of graphite target.Its location layout does not have particular requirement, can be placed on any one target position to target.
The present invention is ion-plating deposition district 11 to the space between the target, all to the looping zone, ion-plating deposition district between the target; Work rest 2 is driven by direct-current machine and rotates between to target, and rotating speed can be regulated.Direct-current machine drives Large Gear Shaft During 3 and then drives master wheel 4 and rotates, and connects firmly at the work rest on the Large Gear Shaft During 32 and revolves round the sun in ion-plating deposition district 11 along Large Gear Shaft During 3.Work rest 2 by work rest axle 5, be located at pinion(gear) 9 on the work rest axle 5, be located at the workpiece hanger rotating shaft 6 on the pinion(gear) 9 and the workpiece hanger 7 that connects firmly in workpiece hanger rotating shaft 6 is formed.Drive and then make work rest 2 rotations with the pinion(gear) 9 of master wheel 4 engagements by master wheel 4; Be provided with and dial difference mechanism 10, in pinion(gear) 9 rotation processes, dial the 10 collision workpiece hanger rotating shafts 6 of difference mechanism, drive 7 rotations of workpiece hanger.By the size of adjustment speed adjustment metal nano-crystalline particle and the structure of coating.In order to improve the homogeneity of coating, workpiece can be taked rotation, revolution and three kinds of modes of triple turn.Heating unit 13 is installed on the vacuum-chamber wall, can be regulated the temperature in the vacuum chamber easily.Pumped vacuum systems can be made up of diffusion pump and mechanical pump, also can adopt molecular pump, and highest attainable vacuum can reach 8 * 10
-4Pa.
When system starts, start mechanical pump earlier and take out rough vacuum, start the diffusion pump pumping high vacuum then, when vacuum tightness reaches 5 * 10
-3During Pa, start heating unit, carry out bake out, remove air adsorbed on vacuum-chamber wall, work rest and the workpiece, work rest rotates, and keeps about 100 ℃ temperature, and the equal vacuum degree reaches 5 * 10
-3During Pa, stop heating, charge into working gas, begin to enter coating process, wait coating process to finish after, when naturally cooling, equitemperature drop to below 50 ℃, take out workpiece, whole workflow finishes.
In order further to improve the sticking power of coating and workpiece, the magnetic controlling target of this device can also convert the cathode arc target to simultaneously, utilizes the metal ion of the height ionization of arc ion plating generation, and the bombardment workpiece surface improves sticking power.
The present invention takes full advantage of target technology, twin skill from domestic and international general filming equipment is different at present Art, non-balance magnetically controlled sputter technology, the dual-purpose technology of multi sphere-magnetic control and closed magnetic field technology are improved well The uniformity of coating layer thickness, improved coating quality, improved coating adhesion. Can open easily Open up research and the production work of various coating. The present invention can adopt computer controlled automatic and semi-automatic control Production process processed, its combination property improves greatly. Therefore, the present invention not only makes application more extensive, Have higher production efficiency, and equipment coating uniformity in having guaranteed on a large scale, coating quality is higher, Adhesive force is stronger.
In a word, equipment provided by the invention has demonstrated fully the advantage of various advanced coating techniques, has overcome existing The shortcoming that many preparation systems are arranged has the characteristics such as plated film efficient height, coating cost be low, easy to operate. Can To carry out very easily industrialized production, has great using value.
Claims (4)
1. one kind to target twin magnetic controlled sputtering ion plating deposition device, comprise vacuum chamber, vacuum chamber is provided with vacuum orifice, be provided with the bearing of magnetic controlling target and work rest and supporting workpiece frame in the vacuum chamber, it is characterized in that: magnetic controlling target is the setting of target subtend, every pair of magnetic controlling target is powered by an intermediate frequency power supply, and work rest is between to target; Every pair of magnetic controlling target magnetic field arranged direction is opposite, forms closed; Each independent target magnetic field layout type all is a unbalanced magnetic field simultaneously.
2. according to claim 1 to target twin magnetic controlled sputtering ion plating deposition device, it is characterized in that: be provided with four pairs of magnetic controlling targets in the vacuum chamber, wherein metallic target is a pair of, and remaining three pairs is graphite target.
3. according to claim 1 and 2 to target twin magnetic controlled sputtering ion plating deposition device, it is characterized in that: be provided with heating unit in the vacuum chamber.
4. according to claim 1 and 2 to target twin magnetic controlled sputtering ion plating deposition device, it is characterized in that: to the space between the target is the ion-plating deposition district, all to the looping zone, ion-plating deposition district between the target; Be provided with and drive bearing and rotate and make the driving mechanism that work rest moves along annular region and drive the driving mechanism that work rest rotates around the work rest axle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100191616A CN100392147C (en) | 2005-07-26 | 2005-07-26 | Pair target twin magnetic controlled sputtering ion plating deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100191616A CN100392147C (en) | 2005-07-26 | 2005-07-26 | Pair target twin magnetic controlled sputtering ion plating deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1718847A CN1718847A (en) | 2006-01-11 |
| CN100392147C true CN100392147C (en) | 2008-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100191616A Expired - Fee Related CN100392147C (en) | 2005-07-26 | 2005-07-26 | Pair target twin magnetic controlled sputtering ion plating deposition device |
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| CN (1) | CN100392147C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI450991B (en) * | 2009-09-30 | 2014-09-01 | Hon Hai Prec Ind Co Ltd | Fixing frame used in sputtering process |
| TWI450990B (en) * | 2009-09-16 | 2014-09-01 | Hon Hai Prec Ind Co Ltd | Sputter-coating apparatus |
| WO2023018419A1 (en) * | 2021-08-13 | 2023-02-16 | Shine Technologies, Llc | Magnetic rotation device for high vacuum applications such as ion and isotope production |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101634012B (en) * | 2008-07-21 | 2011-05-25 | 中国科学院宁波材料技术与工程研究所 | Ion beam assisting magnetic control sputtering deposition method for surface protection |
| CN102251224A (en) * | 2011-07-11 | 2011-11-23 | 中国科学院金属研究所 | Device and method for depositing film on SiC fiber surface |
| CN103668092B (en) * | 2012-09-24 | 2016-03-02 | 中国科学院大连化学物理研究所 | A kind of plasma-aid magnetron sputtering deposition method |
| CN103668095B (en) * | 2013-12-26 | 2015-12-02 | 广东工业大学 | A kind of high power pulse plasma enhancing combined magnetic-controlled sputter deposition apparatus and using method thereof |
| CN103981496B (en) * | 2014-02-10 | 2016-11-02 | 常州大学 | A kind of apparatus and method preparing TiAlCrN multi-element coating |
| CN105220120B (en) * | 2015-10-27 | 2017-06-23 | 中国科学院兰州化学物理研究所 | A kind of method of MULTILAYER COMPOSITE fullerene film industrialization in automobile engine |
| CN106367724A (en) * | 2016-09-28 | 2017-02-01 | 深圳市华星光电技术有限公司 | Sputtering device |
| CN108018530A (en) * | 2017-12-29 | 2018-05-11 | 上海驰声新材料有限公司 | The filming equipment and evaporation color method of a kind of non-crystaline amorphous metal |
| CN110066982A (en) * | 2019-04-17 | 2019-07-30 | 厦门阿匹斯智能制造系统有限公司 | A kind of Distribution of Magnetic Field method of PVD plated film producing line magnetron sputtering |
| CN110129700A (en) * | 2019-06-12 | 2019-08-16 | 阳江十八子刀剪制品有限公司 | A kind of preparation method of high-strength high-ductility titanium alloy material cutter |
| CN111593312A (en) * | 2020-07-10 | 2020-08-28 | 中国工程物理研究院核物理与化学研究所 | Chromium coating preparation device and method |
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|---|---|---|---|---|
| JP2003193230A (en) * | 2001-12-25 | 2003-07-09 | Sanyo Shinku Kogyo Kk | Method and apparatus for depositing thin film of oxide or the like |
| JP2003213408A (en) * | 2002-01-28 | 2003-07-30 | Sanyo Shinku Kogyo Kk | Reactive sputtering method, and film deposition apparatus therefor |
| CN2656432Y (en) * | 2003-09-11 | 2004-11-17 | 深圳豪威真空光电子股份有限公司 | Rotary type magnetic controlled sputtering target |
| CN1556244A (en) * | 2003-12-31 | 2004-12-22 | 天津大学 | Multipair target thin film sputterying instrument |
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2005
- 2005-07-26 CN CNB2005100191616A patent/CN100392147C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003193230A (en) * | 2001-12-25 | 2003-07-09 | Sanyo Shinku Kogyo Kk | Method and apparatus for depositing thin film of oxide or the like |
| JP2003213408A (en) * | 2002-01-28 | 2003-07-30 | Sanyo Shinku Kogyo Kk | Reactive sputtering method, and film deposition apparatus therefor |
| CN2656432Y (en) * | 2003-09-11 | 2004-11-17 | 深圳豪威真空光电子股份有限公司 | Rotary type magnetic controlled sputtering target |
| CN1556244A (en) * | 2003-12-31 | 2004-12-22 | 天津大学 | Multipair target thin film sputterying instrument |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI450990B (en) * | 2009-09-16 | 2014-09-01 | Hon Hai Prec Ind Co Ltd | Sputter-coating apparatus |
| TWI450991B (en) * | 2009-09-30 | 2014-09-01 | Hon Hai Prec Ind Co Ltd | Fixing frame used in sputtering process |
| WO2023018419A1 (en) * | 2021-08-13 | 2023-02-16 | Shine Technologies, Llc | Magnetic rotation device for high vacuum applications such as ion and isotope production |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1718847A (en) | 2006-01-11 |
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Granted publication date: 20080604 Termination date: 20100726 |