CN100382235C

CN100382235C - Electroplating and/or electropolishing stand and method for electroplating and/or electropolishing wafers

Info

Publication number: CN100382235C
Application number: CNB2005100037736A
Authority: CN
Inventors: 王辉; 费利克斯·故特曼; 沃哈·努克
Original assignee: ACM Research Inc
Current assignee: ACM Research Inc
Priority date: 1998-11-28
Filing date: 1999-11-24
Publication date: 2008-04-16
Anticipated expiration: 2019-11-24
Also published as: KR20010086051A; JP2007119923A; EP1133786A2; CN1632914A; WO2000033356A2; KR20050013179A; KR100562011B1; TW430919B; CA2352160A1; WO2000033356A3; CN1191605C; KR100503553B1; IL143316A; IL143316A0; AU3105400A; WO2000033356A9; CN1346510A; JP2002531702A; KR100516776B1; KR20040070317A

Abstract

A wafer chuck assembly for holding a wafer during electroplating and/or electropolishing of the wafer includes a wafer chuck for receiving the wafer. The wafer chuck assembly also includes an actuator assembly for moving the wafer chuck between a first and a second position. When in the first position, the wafer chuck is opened. When in the second position, the wafer chuck is closed.

Description

Plating and/or the electropolishing platform and the method for plating and/or electropolishing wafer

The present invention is that application number is 99813794.4, denomination of invention for " electroplate and/or electropolishing during load and the method and apparatus of location semiconductor workpiece " the dividing an application of Chinese patent application.

Technical field

Present invention generally relates to the method and apparatus that in the process treatment process of workpiece, loads and locate semiconductor workpiece.Or rather, the present invention relates to and during the plating of semiconductor workpiece and/or electropolishing, electroplate and/or plating and/or the electropolishing platform and the method for electropolishing wafer.

Background technology

In general, semiconductor device is on manufacturing or the semi-conducting material that is called wafer or section that is produced on plate-like.Or rather, originally wafer scales off from silicon ingot.Then wafer through repeatedly shelter, corrosion and depositing technics and form the electronics circuit of semiconductor device.

Between many decades in the past, semi-conductor industry is that the function of semiconductor device increases according to Moore's Law, the Moore's Law prophesy, and the function of semiconductor device will double in per 18 months.Semiconductor device function this improves because of the characteristic size that has reduced device (that is, be present in the device minimum dimension) and partly reached.In fact, the characteristic size of semiconductor device is promptly reduced to 0.25 μ m by 0.35 μ m, and is 0.18 μ m now.Undoubtedly, the trend of the semiconductor device that this trend is littler be it seems the stage that exceeds inferior 0.18 μ m that advances to.

Yet a potential limiting factor developing more powerful semiconductor device is the increase of interconnection line (lead-in wire of single semiconductor device and the lead wire of conductor that the semiconductor device of any number is connected together) signal delay.Along with reducing of feature sizes of semiconductor devices, the interconnection line density in the device increases.Yet, the approaching more line capacitance that has increased interconnection line of interconnection line, thus bigger interconnection line signal delay caused.In general, found that interconnection line postpones with square increasing that characteristic size reduces.Contrast has with it found that grid delay (that is the delay of the grid of semiconductor device or table top) reduces with characteristic size and linear the increase.

The way that this interconnection line of the compensation of a routine postpones to increase is to increase a plurality of metal levels.Yet the shortcoming of this way is to make additional metal level to be inconjunction with and to have increased production cost.And these additional metal levels have produced additional heating, and this all is disadvantageous to chip performance and reliability.

Therefore, semi-conductor industry has been brought into use copper but not aluminum is made metal interconnecting wires.Moreover, the electromigration of copper (trend that means the lead-in wire attenuate under current capacity that is made of copper is weak) than aluminium a little less than.

Yet, before semi-conductor industry is extensive use of copper, need new technology.Or rather, can be on wafer corrode and make the copper layer with electroplating technology and/or with electrolytic brightening process.In general, in plating and/or electrolytic brightening process, wafer is placed electrolyte, supply with electric charge to wafer then.Like this, in plating and/or electrolytic brightening process, just need a wafer clamp to come loaded with wafers and supply with electric charge to wafer.

Summary of the invention

In typical embodiments of the present invention, the wafer clamp assembly comprises the wafer clamp of accepting wafer during the plating of wafer and/or electropolishing.The wafer clamp assembly also comprises actuator moves wafer clamp between first and second positions.Wafer clamp is opened when primary importance.And wafer clamp is closed when the second place.

The invention provides a kind of in electrolyte, the plating and/or the plating and/or the electropolishing groove of electropolishing wafer, comprise: a wafer clamp that keeps wafer; An electrolyte container that holds electrolyte; A wafer clamp assembly, this wafer clamp assembly is equipped to described wafer clamp is moved between first and second positions, wherein said wafer clamp is opened when described primary importance, close when the described second place, wherein said wafer clamp is placed in the described electrolyte container when the described second place.

The invention provides a kind of method that keeps wafer during plating and/or electropolishing wafer, described method comprises: wafer is provided in wafer clamp; With described wafer clamp assembly wafer clamp is moved between first and second positions, wherein said wafer clamp is opened when described primary importance, closes when the described second place, and wherein said wafer clamp is placed in the electrolyte container when being in the described second place.

A kind ofly be used to electroplate and/or the plating and/or the electropolishing platform of electropolishing wafer according to of the present invention, comprise:

A frame;

At least one is contained in plating and/or electropolishing groove on the frame, described plating and/or electropolishing groove have electrolyte container and suitably form in order to cover the cover plate on described electrolyte container; And

The cover plate lifting subassembly, be constructed such that described cover plate moves between the primary importance and the second place, wherein said cover plate covers on described electrolyte container when described primary importance, and when in the described second place, described cover plate is raised from described electrolyte container.

According to of the present invention a kind of be used to operate electroplate and/or the electropolishing platform so that electroplate and/or the method for electropolishing semiconductor wafer, described plating and/or electropolishing platform have:

A frame;

The cover plate lifting subassembly,

Described method comprises:

A) use described cover plate lifting subassembly to make the described cover plate of described at least one groove move to primary importance to cover on described electrolyte container;

B) when described cover plate is in primary importance, a pending wafer is loaded in described at least one groove;

C) use described at least one groove to handle the wafer that is loaded;

D) the handled wafer of unloading from described at least one groove;

E) be that any amount of pending wafer repeats b), c) and d); And

F) make the described cover plate of described at least one groove move to the second place, so that promote described cover plate from described electrolyte container.

Description of drawings

Pointed out main points of the present invention clearly and clearly proposed claim at the conclusion part of this specification.Yet, with reference to following description relevant and accompanying drawing, can understand the present invention best aspect formation and the method for operation two with claim, identical in the accompanying drawings part can be represented by same numeral.

Fig. 1 is a kind of wafer processing apparatus vertical view of typical embodiments;

Fig. 2 is the profile of wafer processing apparatus shown in Figure 1 along the intercepting of 2-2 line;

Fig. 3 is wafer processing apparatus shown in Figure 1 another profile along the intercepting of 3-3 line;

Fig. 4 is for handling the flow process of wafer with wafer processing apparatus shown in Figure 1;

Fig. 5 is the vertical view of a kind of alternative structure of wafer processing apparatus shown in Figure 1;

Fig. 6 is the profile of wafer processing apparatus shown in Figure 5 along the intercepting of 6-6 line;

Fig. 7 is wafer processing apparatus shown in Figure 5 another profile along the intercepting of 7-7 line;

Fig. 8 is the vertical view of the another kind of alternative structure of wafer processing apparatus shown in Figure 1;

Fig. 9 also has the vertical view of another kind of alternative structure for wafer processing apparatus shown in Figure 1;

Figure 10 has the vertical view of another kind of alternative structure again for wafer processing apparatus shown in Figure 1;

Figure 11 is the profile of wafer processing apparatus shown in Figure 10 along the intercepting of 11-11 line;

Figure 12 is wafer processing apparatus shown in Figure 10 another profile along the intercepting of 12-12 line;

Figure 13 is the another kind of alternative structure of wafer processing apparatus shown in Figure 1;

Figure 14 is the profile of wafer processing apparatus shown in Figure 13 along the intercepting of 14-14 line;

Figure 15 is wafer processing apparatus shown in Figure 13 another profile along the intercepting of 15-15 line;

Figure 16 is the profile of a kind of typical embodiments of a plating and/or electropolishing groove;

Figure 17 is the plating shown in Figure 16 and/or the vertical view of an electropolishing groove part;

Figure 18 A～18C is the profile of a kind of typical embodiments of wafer clamp assembly;

Figure 19 is the profile of a kind of alternative structure of wafer clamp assembly shown in Figure 18 A～18C;

Figure 20 is the profile of the another kind of alternative structure of wafer clamp assembly shown in Figure 18 A～18C;

Figure 21 also has the profile of another kind of alternative structure for wafer clamp assembly shown in Figure 18 A～18C;

Figure 22 A and 22B have the profile of another kind of alternative structure again for wafer clamp assembly shown in Figure 18 A～18C;

Figure 23 is the profile of a kind of typical embodiments of wafer clamp;

Figure 24 is the profile of a kind of alternative structure of wafer clamp shown in Figure 23;

Figure 25 is the profile of the another kind of alternative structure of wafer clamp shown in Figure 23;

Figure 26 also has the profile of another kind of alternative structure for wafer clamp shown in Figure 23;

Figure 27 has the profile of another kind of alternative structure again for wafer clamp shown in Figure 23;

Figure 28 is the profile of the another kind of alternative structure of wafer clamp shown in Figure 23;

Figure 29 also has the profile of another kind of alternative structure for wafer clamp shown in Figure 23;

Figure 30 has the profile of another kind of alternative structure again for wafer clamp shown in Figure 23;

Figure 31 A and 31B are the end view of plating shown in Figure 16 and/or a kind of alternative structure of electropolishing platform;

Figure 32 A and 32B are the vertical view of plating shown in Figure 31 A and the 31B and/or electropolishing platform;

Figure 33 A and 33B are the front view of plating shown in Figure 31 A and the 31B and/or electropolishing platform;

Figure 34 is the vertical view of a kind of typical embodiments of plating shown in Figure 31 A and the 31B and/or electropolishing groove;

Figure 35 is the end view of a kind of typical embodiments of plating shown in Figure 34 and/or electropolishing groove;

Figure 36 is the vertical view of a plating shown in Figure 34 and/or an electropolishing groove part;

Figure 37 is the end view of part shown in Figure 36;

Figure 38 is the vertical view of plating shown in Figure 34 and/or electropolishing groove another part;

Figure 39 is the end view of part shown in Figure 38;

Figure 40 A and 40B are the profile of part shown in Figure 38 along the intercepting of 40 lines;

Figure 41 is the profile of part shown in Figure 38 along the intercepting of 41 lines;

Figure 42 is part shown in Figure 38 another profile along the intercepting of 42 lines;

Figure 43 is the profile of a plating shown in Figure 34 and/or an electropolishing groove part;

Figure 44 is the perspective view of plating shown in Figure 34 and/or electropolishing groove another part;

Figure 45 also has the perspective view of another part for plating shown in Figure 34 and/or electropolishing groove;

Figure 46 has the bottom view of another part again for plating shown in Figure 34 and/or electropolishing groove;

Figure 47 is the end view of part shown in Figure 46;

Figure 48 is the enlarged drawing of an end view part shown in Figure 47;

Figure 49 is the exploded perspective illustration of a kind of typical embodiments of wafer clamp;

Figure 50 is the exploded perspective illustration of a kind of typical embodiments of wafer clamp shown in Figure 49;

Figure 51 ` is the profile of wafer clamp shown in Figure 49;

Figure 52 A and 52B are the profile of wafer clamp shown in Figure 49;

Figure 53 A～53G is the profile of the various alternative structure of a wafer clamp part shown in Figure 51;

Figure 54 is the flow process with wafer clamp handle wafer shown in Figure 51;

Figure 55 is the profile of a kind of alternate embodiment of wafer clamp;

Figure 56 is the profile of second kind of alternate embodiment of wafer clamp;

Figure 57 is the profile of the third alternate embodiment of wafer clamp;

Figure 58 is the profile of the 4th kind of alternate embodiment of wafer clamp;

Figure 59 is the profile of the 5th kind of alternate embodiment of wafer clamp;

Figure 60 is the profile of the 6th kind of alternate embodiment of wafer clamp;

Figure 61 is the profile of the 7th kind of alternate embodiment of wafer clamp;

Figure 62 is the profile of the 8th kind of alternate embodiment of wafer clamp;

Figure 63 is the profile of the 9th kind of alternate embodiment of wafer clamp;

Figure 64 is the profile of the tenth kind of alternate embodiment of wafer clamp;

Figure 65 is the profile of the 11 kind of alternate embodiment of wafer clamp;

Figure 66 is the profile of the 12 kind of alternate embodiment of wafer clamp;

Figure 67 is the vertical view of wafer.

Embodiment

In order to understand the present invention more up hill and dale, many details are described below, as concrete material, parameter etc.Yet should admit that this description do not mean that and limit the scope of the invention, but can be more comprehensively and more completely describe typical embodiments.

In addition, main points of the present invention are particularly suitable for plating and/or the relevant purposes of electropolishing with semiconductor workpiece or wafer.So, typical embodiments of the present invention has been described in this respect.Yet should admit that this description does not mean that restriction purposes of the present invention or application.More exactly, such description can be more comprehensively and is more completely described typical embodiments.

Referring now to Fig. 1,, wafer processing apparatus 100 is configured for to be electroplated and/or electropolishing semiconductor workpiece or wafer.In a kind of typical embodiments, wafer processing apparatus 100 comprises to be electroplated and/or electropolishing platform 102, rinsing table 104,

storage sheet platform

108 and 110 and manipulator 106.

Referring now to Fig. 4,, wafer processing apparatus 100 is performed to be described with flow format about treatment step.Referring to Fig. 1, manipulator 106 is obtained untreated semiconductor workpiece or wafer by storage sheet platform 108 and 110 (Fig. 4, frame 402) again.The wafer that manipulator 106 is obtained by

storage sheet platform

108 and 110 is passed to be electroplated and/or electropolishing platform 102 (Fig. 4, frame 404).As described in more detail below, wafer is electroplated and/or electropolishing (Fig. 4, frame 406) in plating and/or electropolishing platform 102.The wafer of plating and/or electropolishing is passed to rinsing table 104 (Fig. 4, frame 408) by manipulator 106.Wafer clear and dry in rinsing table 104 (Fig. 4, frame 410).Clean with the dry wafer of crossing and transmit back storage sheet platform 108 and 110 (Fig. 4, frame 412) by manipulator 106.Can repeat whole technical process to another untreated wafer then.Yet should admit, can make various modifications to step shown in Figure 4 and top description, and not deviate from scope of the present invention.

Referring now to Fig. 2,, in typical embodiments of the present invention, plating and/or electropolishing platform 102 and rinsing table 104 comprise that five are electroplated and/or electropolishing groove 112 and five rinse baths 114.Therefore, electrodepositable and/or electropolishing five wafers nearly.Yet should admit that plating and/or electropolishing platform 102 and rinsing table 104 can comprise plating and/or the electropolishing groove 112 and the rinse bath 114 of any number according to concrete application.For example, for using in a small amount, plating and/or electropolishing platform 102 and rinsing table 104 can be equipped with one respectively and electroplate and/or electropolishing groove 112 and a rinse bath 114.In addition, should admit that plating and/or electropolishing groove 112 can become according to concrete application with the ratio of rinse bath 114 numbers.For example, in one application, electroplate and/or the electrolytic brightening process process processing time longer than cleaning process need, plating that wafer processing apparatus 100 just can be equipped with and/or electropolishing groove 112 can be more than rinse baths 114.As selection, for electroplate and/or the electrolytic brightening process process than cleaning process need than the weakness situation of reason time, plating that wafer processing apparatus 100 just can be equipped with and/or electropolishing groove 112 are less than rinse bath 114.

As shown in Figure 2, plating and/or electropolishing groove 112 and a rinse bath 114 are for vertically stacked.In this manner, can increase the wafer number of processing and do not increase the occupation of land (shared land for building area) of wafer processing apparatus 100.In increasingly competitive semi-conductor industry, the processing of wafers number that increases every square feet of wafer processing apparatus 100 floor spaces is favourable.

Participate in Fig. 1 again, as mentioned above, obtain untreated wafer from

storage sheet platform

108 and 110, the wafer that will handle returns

storage sheet platform

108 and 110 then.Or rather, referring to Fig. 3, in this typical embodiments, storage sheet platform 108 and 110 (Fig. 1) comprise the cassette wafer case 116 of adorning wafer.As shown in Figure 3, be equipped with manipulator 106 and remove untreated wafer from cassette wafer case 116, and wafer transferring to arbitrary plating and/or electropolishing groove 112 (Fig. 2).The wafer that the manipulator 106 that is equipped with will be handled from arbitrary rinse bath 114 (Fig. 2) is sent cassette wafer case 116 back to.Though shown in Figure 3 is that single deck tape-recorder formula wafer case 116 should be admitted, storage sheet platform 108 and 110 (Fig. 1) can comprise the cassette wafer case 116 of any number.

In addition,

storage sheet platform

108 and 110 can comprise various structures according to concrete application.For example,

storage sheet platform

108 and 110 each can comprise at least one cassette wafer case 116.In a kind of structure, storage sheet platform 108 provides a cassette wafer case 116 to adorn untreated wafer.Take out wafer,, send the cassette wafer case 116 of storage sheet platform 108 again back to through handling.Before the wafer of handling from storage sheet platform 108 cassette wafer case 116, the cassette wafer case 116 that storage sheet platform 110 provides another that untreated wafer is housed.In case handled wafer, just can begin to handle untreated wafer from storage sheet platform 110 cassette wafer case 116 from storage sheet platform 108 cassette wafer case 116.Remove the wafer of handling from storage sheet platform 108 cassette wafer case 116 then, change the cassette wafer case 116 that another is equipped with untreated wafer.In this manner, wafer processing apparatus 100 can turn round continuously and not have unintentional interruption.

In another kind of structure, storage sheet platform 108 can provide the cassette wafer case 116 that untreated wafer is housed.Storage sheet platform 110 provides the cassette wafer case 116 of a sky.Send back to the empty calorie formula wafer case 116 of storage sheet platform 110 after processed from the untreated wafer of storage sheet platform 108 cassette wafer case 116.This structure also is convenient to treatment facility 100 and is turned round continuously.Yet the advantage of this structure is to specify one of two

storage sheet platforms

108 and 110 to be used for untreated wafer, and the wafer that another is used to handle.In this manner, operator or manipulator are mistakened as and do to contain untreated wafer person with regard to the unlikely cassette wafer case 116 of handling wafer that will contain, or opposite.

Referring to Fig. 2, wafer processing apparatus 100 comprises rack unit, and the various electrical equipment and the mechanical part of wafer processing apparatus 100 all are mounted in it as power supply, pump, valve etc.Referring to Fig. 1, wafer processing apparatus 100 comprises that also computer 132 comes the operation of control wafer treatment facility 100 again.Or rather, computer 132 can be equipped with the appropriate software program and finish the above-mentioned processing step relevant with Fig. 4 that reach shown in Figure 4.

Should admit, can do various modifications and not deviate from design of the present invention and/or scope the structure of wafer processing apparatus 100.In this respect, among description below and the relevant figure, will describe and narrate various alternate embodiment of the present invention.Yet should admit that these alternate embodiment do not mean that all modifications that proof can be made the present invention.More exactly, these alternate embodiment just prove the modification that some is possible.

Referring to Fig. 5～7, in a kind of alternate embodiment of the present invention, wafer processing apparatus 100 comprises storage sheet platform 500.Referring to Fig. 7, storage sheet platform 500 is equipped with a manipulator 502 and comes lifting cassette wafer case 116.Therefore, when wafer when cassette wafer case 116 is taken out and send into, can reduce vertically moving of manipulator 106.In this manner, can improve the disposed of in its entirety speed of the operation rate of manipulator 106 with accommodate wafer treatment facility 100.

Referring to Fig. 8, in another kind of alternate embodiment of the present invention, wafer processing apparatus 100 comprises manipulator 800 laterally move (x direction shown in Figure 8).Therefore, manipulator 800 needn't rotate around its vertical axis.

Referring to Fig. 9, also have in a kind of alternate embodiment in the present invention, wafer processing apparatus 100 comprises one folded 902 and electroplates and/or electropolishing groove 112 (Fig. 2) and rinse bath 114 (Fig. 2).Therefore, can further reduce the occupation of land of treatment facility 100.

Referring to Figure 10～12, have again in a kind of alternate embodiment in the present invention, wafer processing apparatus 100 comprises triple-

lap

1002,1004 and 1006 and electroplates and/or electropolishing groove 112 (Figure 12) and rinse bath 114 (Figure 12).Should admit, according to concrete application, can be with each folded 1002,1004 and 1006 plating and/or electropolishing groove 112 that are provided as various combination.For example, 1002 and 1006 liang of folded being provided as only can be contained plating and/or electropolishing groove 112.Can only be provided as rinse bath 114 and fold 1004.As selection, each folded combination that also can be provided as plating and/or electropolishing groove 112 and rinse bath 114.Wafer processing apparatus 100 also is equipped with makees laterally (direction of y shown in Figure 10) mobile manipulator 1008.Referring to Figure 12, wafer processing apparatus 100 also comprises other cassette wafer case 1202, so that provide extra processing capacity for wafer processing apparatus 100.

So far, the wafer processing apparatus 100 that contains plating and/or electropolishing platform 102 (Fig. 1) and rinsing table 104 (Fig. 2) has been described.Yet should admit, can be equipped with 100 of wafer processing apparatus and contain plating and/or electropolishing platform 102 (Fig. 1).For example, referring to Fig. 9,

100 of wafer processing apparatus be can be equipped with and folded 902 plating and/or electropolishing platform 102 (Fig. 1) contained.Therefore, 100 of wafer processing apparatus are electroplated and/or electropolishing wafer and do not have clean wafers.The wafer of handling can clean in independent wafer cleaning device.As selection, the wafer of handling can clean in the rinsing table of another wafer processing apparatus.

In addition, wafer processing apparatus 100 can comprise other processing of wafers platform.For example, referring to Figure 13, in another embodiment of the invention, wafer processing apparatus 100 comprises chemical machinery and polishes (CMP) platform 1302.In this manner, wafer also can polish or polish except plating and/or electropolishing and cleaning.The concrete order of carrying out these processing can become according to concrete application.For example, in one application, wafer can be electroplated in plating and/or electropolishing platform 102, cleans in rinsing table 104, polishes in CMP platform 1302 then.In another kind was used, wafer can begin electropolishing in plating and/or electropolishing platform 102, cleaned in rinsing table 104, polished in CMP platform 1302 then.

After having described the various typical embodiments of wafer processing apparatus, the typical embodiments of plating and/or electropolishing groove 112 will be described below like this.Referring now to Figure 16 and 17,, in a typical embodiments of the present invention, plating and/or electropolishing groove 112 comprise electrolyte container 1608, wafer clamp 1604 and wafer clamp assembly 1600.

Referring to Figure 16, in this typical embodiments, electrolyte container 1608 is equipped with the electrolyte of plating and/or electropolishing wafer 1602.During plating and/or electropolishing, wafer clamp 1604 is held wafer 1602.Wafer clamp assembly 1600 is located wafer clamp 1604 in electrolyte container 1608.Wafer clamp assembly 1600 also makes wafer clamp 1604 rotate, to improve the uniformity of plating and/or electrolytic brightening process.

In this typical embodiments, referring to Figure 17, electrolyte container 1608 preferably merotomizes 1620,1622,1624,1626,1628 and 1630 by dividing

plate

1610,1612,1614,1616 and 1618.Yet should admit that electrolyte container can be divided into the suitable part of any number according to concrete application by the dividing plate of any number.

Referring to Figure 16, in this typical embodiments, pump 1654 is evacuated to electrolyte 1656 electrolyte container 1608 from storage tank 1658.Or rather, flow through filter 1652 and liquid quality flow controller (LMFCs) 1646,1648 and 1650 of electrolyte 1656.Filter 1652 is removed pollutant and undesirable particle from electrolyte 1656.LMFCs 1646,1648 and 1650 controls the electrolyte stream of each

several part

1620,1624 and 1628 (Figure 17) respectively.Yet should admit that electrolyte 1656 can provide with any method easily according to concrete application.

As mentioned above, during plating and/or electropolishing, wafer clamp 1604 is held wafer 1602.In this typical embodiments, wafer 1602 is sent into or provided to manipulator 106 to wafer clamp 1604.As discussed above, manipulator 106 can obtain wafer 1602 from the treatment bench or the treatment facility of cassette wafer case 116 (Fig. 3) or front.Wafer 1602 also can manually be put into wafer clamp 1604 by the operator according to concrete application.

More will describe in detail as following, after accepting wafer 1602, wafer clamp 1604 is closed to hold wafer 1602.Wafer clamp assembly 1600 is positioned at wafer clamp 1604 and wafer 1602 in the electrolyte container 1608 then.Or rather, in this typical embodiments, wafer clamp assembly 1600 is positioned at dividing

plate

1610,1612,1614,1616 and 1618 (Figure 17) top with wafer clamp 1604 and wafer 602, to form a gap between wafer 1602 bottom surfaces and dividing

plate

1610,1612,1614,1616 and 1618 (Figure 17) top.

In this typical embodiments, electrolyte 1656 flows into 1620,1624 and contacts with 1628 parts (Figure 17) and with wafer 1602 bottom surfaces.Electrolyte 1656 flows through the gap that forms between wafer 1602 bottom surfaces and dividing

plate

1610,1612,1614,1616 and 1618 (Figure 17).Electrolyte 1656 is got back to storage tank 1658 through 1622,1626 and 1630 parts (Figure 17) again.

More will describe in detail as following, wafer 1602 and one or

more power supply

1640,1642 link to each other with 1644.Moreover, place one or more electrodes 1631,1634 of electrolyte container 1608 to link to each other with

power supply

1640,1642,1644 with 1636.When electrolyte 1656 contacts with wafer 1602, formed the loop of plating and/or electropolishing wafer 1602.When wafer 1602 charged and when

electrode

1632,1634 and 1636 had negative potential, then electroplate.When wafer 1602 is charged and when

electrode

1632,1634 and 1636 had positive potential, 1602 of wafers suitably carried out electropolishing.In addition, when wafer 1602 was electroplated, electrolyte 1656 was preferably sulfuric acid solution.And during wafer 1602 electropolishing, electrolyte 1656 is preferably phosphoric acid solution.Yet should admit, can comprise various chemicals according to concrete application electrolyte 1656.

In addition, more will describe in detail as following, wafer clamp assembly 1600 can make wafer 1602 rotate and/or vibration, so that make the plating of wafer 1602 and/or electropolishing more even.After wafer 1602 plating and/or electropolishing, from electrolyte container 1608, take out wafer 602.Or rather, wafer clamp assembly 1600 is mentioned wafer clamp 1604 from electrolyte container 1608.Open wafer clamp 1604 then.Manipulator 106 is removed wafer 1602 from wafer clamp 1604, provides another wafer 1602 power supply platings and/or electropolishing to use then.Electroplate and/or electrolytic brightening process in order to describe in more detail, referring to the U.S. Patent application Ser.No.09/232 that proposed on January 15th, 1999,864, be entitled as PLATING APPARATUS AND METHOD, quote full content herein as a reference, and the PCT patent application No.PCT/US99/15506 of proposition on August 7th, 1999, be entitled as METHODS AND APPARATUS FOR ELECTROPOLISHINGMETAL INTERCONNECTIONS ON SEMICONDUCTOR DEVICES, quote full content herein as a reference.

As described earlier, provide the detail of plating and/or electropolishing groove 112 above, so that can be more comprehensively and more completely describe the present invention.Like this, the various aspects of plating and/or electropolishing groove 112 be can revise and design of the present invention and/or scope do not deviated from.For example, though will electroplate and/or electropolishing groove 112 narration and the electrolyte container 1608 that is described as having a plurality of parts, electroplate and/or electropolishing groove 112 also can comprise static a bath.

After having described a kind of typical plating and/or electropolishing groove and method, a kind of typical embodiments of wafer clamp 1604 and wafer clamp assembly 1600 will be described below like this.As main points, for the purpose of clear and convenient, after this will combine description to the plating of wafer clamp 1604 and wafer clamp assembly 1600 and semiconductor wafer.Yet should admit, wafer clamp 1604 and wafer clamp assembly 1600 can with any suitable processing of wafers technology, be used in combination as electropolishing, cleaning, corrosion etc.In addition, should admit that wafer clamp 1604 and wafer clamp assembly 1600 can be handled with the various workpiece of non-semiconductor wafer and be used in combination.

Referring to Figure 18 A～18C, as mentioned above, during plating and/or electropolishing, wafer clamp assembly 1600 is positioned at (Figure 16) in the electrolyte container 1608 with wafer clamp 1604.In addition, be equipped with wafer clamp assembly 1600 and open and close wafer clamp 1604, to pack into and to remove wafer 1602.

Or rather, in this typical embodiments, wafer clamp assembly 1600 comprises actuator 1860 and spring assembly 1894.Being equipped with actuator 1860 moves wafer clamp 1604 between the primary importance and the second place.In this embodiment, configuration actuator 1860 moves wafer clamp 1604 between a high position and low level.In primary importance, configuration spring assembly 1894 is opened wafer clamp 1604, makes it to remove and the wafer 1602 of packing into.In the second place, configuration spring assembly 1894 is closed wafer clamp 1604.

In this embodiment, actuator 1860 comprises motor 1828,

gear

1822 and 1824 and guide rod 1820.Motor 1828 links to each other with axle 1802 with 1824 through carriage 1816, guide rod 1820 and gear 1822.Or rather, motor 1828 rotates guide rod 1820 through

gear

1822 and 1824, is converted to carriage 1816 moving along guide rail 1826.Carriage 1816 links to each other with axle 1802, and the latter is rigidly connected to the top 1858 of wafer clamp 1604.In this manner, motor 1828 liftable wafer clamp 1604.Yet should admit.Wafer clamp 1604 can wait lifting with any suitable sole duty and method such as pneumatic actuator, magnetic force.Moreover should admit that motor 1828 can comprise dc servomotor, stepper motor etc.

Though Figure 18 A～18C is depicted as single-rail 1826, should admit to use the guide rail 1826 of any number according to concrete application.In addition, referring to Figure 19, in a kind of alternate embodiment of the present invention, at

carriage

1816 and 1906 configurations of another carriage connector 1902 and 1904.

Connector

1902 and 1904 can be with guide rod 1820 lifting wafer clamp 1604 moves carriage 1906 and 1816.Like this, carriage 1816 is stuck on the guide rail 1826 with regard to not conference.Yet should admit that the connector of any suitable type all can be used for moving of

carriage

1906 and 1816.

Continuation is referring to Figure 18 A～18C, and spring assembly 1894 comprises the collar 1804, a plurality of bar 1806 and a plurality of spring 1808.Bar 1806 is rigidly on retaining collar 1804 and wafer clamp 1604 bottoms 1856.Spring 1808 is enclosed within on the bar 1806, and places between the collar 1804 and wafer clamp 1604 tops 1858.In addition, the collar 1804 does not link to each other with axle 1802.Therefore, shown in Figure 18 B, along with wafer clamp 1604 rises, the collar 1804 touches cover plate 1810.Shown in Figure 18 C, bar 1806 prevents that wafer clamp 1604 bottoms 1856 from further rising.Yet spring 1808 compressions make the top 1858 of wafer clamp 1604 continue to rise.Like this, wafer clamp 1604 is opened, and packs into and takes out wafer 1602.

Reach in the manner described above shown in Figure 18 A～18C, the single action of rising wafer clamp 1604 also makes wafer clamp 1604 open.Reduce the negative actuation of wafer clamp 1604 and also close wafer clamp 1604.Or rather, from Figure 18 C, when wafer 1602 had been contained in the wafer clamp 1604, motor 1828 made wafer clamp 1604 begin to descend.Shown in Figure 18 B, along with making wafer clamp 1604, motor 1828 descends, and spring 1808 opens wafer clamp 1604 is closed.

Except spring 1808 application of forces, the cavity 1830 of wafer clamp 1604 tops 1858 and 1856 formation in bottom is supplied with vacuum and/or depressed gas, produce additional power and make wafer clamp 1604 keep lumping together.Or rather, referring to Figure 18 B, wafer clamp assembly 1600 comprises the slip ring assembly 1838 of being furnished with inlet 1870 and 1872.Slip ring assembly 1838 also comprises a plurality of seals 1842 to form cavity 1866 and 1868.In this typical embodiments, through enter the mouth 1870, pipeline 1874 and pipeline 1832 provide vacuum and/or depressed gas to cavity 1830.In order to help the sealing of cavity 1830, wafer clamp 1604 also comprises the seal 1878 that is located between top 1858 and the bottom 1856.

In addition, referring to Figure 18 B, as the Short Description of front and below more to describe in detail, electroplate and/or electropolishing during apply electric charge to wafer 1602.Or rather, in this typical embodiments, slip ring assembly 1838 comprises brush 1844, spring 1846 and screw 1848.In addition, more will describe in detail as following, wafer clamp 1604 comprises the electric-conductor 1880 that electrically contacts with pipeline 1850, reaches the spring part 1882 that electrically contacts with wafer 1602.Therefore, electric charge is applied on the wafer 1602 through screw 1848, spring 1846, brush 1844, axle 1802, pipeline 1850, electric-conductor 1880 and spring part 1882.Like this, screw 1848, spring 1846, brush 1844, axle 1802, pipeline 1850, electric-conductor 1880 and spring part 1882 are all made by electric conducting material.In addition, because axle can rotate, brush 1844 is to be made as graphite by the low-friction material of conduction.

More will describe in detail as following, for help that spring part 1882 and electric-conductor 1880 are isolated with electrolyte during plating and/or electropolishing, wafer clamp 1604 comprises seal 1884.In this typical embodiments of the present invention, supply with barotropic gas to check the airtight quality of seal 1884 to cavity 1892.Or rather, barotropic gas through enter the mouth 1872, pipeline 1876 and pipeline 1850 supply with.Wafer clamp 1604 also comprises seal 1886 and 1888, to help seal chamber 1892.As selection, can provide vacuum and/or depressed gas to cavity 1892, to check the airtight quality of seal 1884.When wafer clamp 1604 is taken out, can supply with barotropic gas to cavity 1892, to blow away the electrolyte on the wafer clamp 1604 from electrolyte.

As mentioned above, being equipped with wafer clamp assembly 1600 rotates to improve the uniformity of plating and/or electrolytic brightening process wafer clamp 1604.Or rather, during plating and/or electropolishing, wafer clamp assembly 1600 rotates wafer clamp 1604 with 5～100 rev/mins rotating speed.Yet should admit that wafer clamp 1604 can be rotated with different rotating speeds according to concrete application.

In addition, more will describe in detail as following, wafer clamp assembly 1600 rotates to help to remove the electrolyte on the wafer clamp 1604 after plating and/or electropolishing wafer clamp 1604.In this process, wafer clamp assembly 1600 is preferably 500 rev/mins with 300～5000 rev/mins rotating speed, rotates wafer clamp 1604.Yet should admit that wafer clamp assembly 1600 can rotate wafer clamp 1604 with different rotating speeds according to concrete application.As shown in figure 20, in this process, when wafer clamp 1604 during at open position, wafer clamp 1604 can be rotated.Therefore, in a kind of alternate embodiment, wafer clamp assembly 1600 comprises bearing 2002 (Figure 20).In this typical embodiments, bearing 2002 is described to place between the collar 1804 and the cover plate 1810.Yet should admit that bearing 2002 can place diverse location according to concrete application.For example, if remove the collar 1804 or reduce its size, bearing 2002 can place between top 1858 and the cover plate 1810.In addition, should admit that wafer clamp assembly 1600 can rotate wafer clamp 1604 with different speed according to concrete application.

Referring to Figure 18 A, wafer clamp assembly 1600 comprises runner assembly 1864 to rotate wafer clamp 1604.In this typical embodiments, the driving-belt 1834 that runner assembly 1864 comprises motor 1836 and links to each other with axle 1802.In this typical embodiments, motor 1836 and driving-belt 1834 place below the carriage 1816.Yet should admit that motor 1836 can place different positions that axle 1802 is rotated with driving-belt 1834.For example, referring to Figure 21, wafer clamp assembly 1600 is described to motor 1836 and driving-belt 1834 places above the carriage 1816.As selection, motor 1836 can be through gear but not driving-belt 1834 link to each other with axle 1802.Motor 1836 also can directly link to each other with axle 1802.In this embodiment, motor 1836 can comprise dc servomotor, stepper motor etc.In addition, should admit that runner assembly 1864 can comprise that other various mechanisms rotate wafer clamp 1604.For example, runner assembly 1864 can be configured to electromagnetic system rotates wafer clamp 1604.

Referring to Figure 18 A～18C, in this typical embodiments, axle 1802 is made by metal or metal alloy against corrosion such as stainless steel.In order to reduce friction, be machined into about 5 microns with axle 1802 surfaces that seal 1842 contacts with brush 1844, be preferably 2 microns surface roughness.In addition, in this typical embodiments, wafer clamp assembly 1600 comprises the

bearing

1812 and 1814 that places

axle

1802 and 1810 of cover plates.Wafer clamp assembly 1600 also comprises the bearing 1818 that places

axle

1802 and 1816 on

carriage.Bearing

1812,1814,1818 can comprise ball bearing, axle bush, low-friction material etc.

As mentioned above, slip ring assembly 1838 is configured to provide vacuum and/or depressed gas, depressed gas, barotropic gas, and is electrically connected with axle 1802.So far, specifically described as Figure 18 A～18C, slip ring assembly 1838 is represented as and is fixed on the carriage 1816.Contrast with it, referring to Figure 22 A and 22B, in a kind of alternate embodiment of the present invention, wafer clamp assembly 1600 comprises slip ring assembly 2200, and slip ring assembly 2200 keeps motionless when wafer clamp 1604 liftings.Or rather, axle 1802 slides through slip ring assembly 2200 with wafer clamp 1604 liftings.

In the following description and the drawings, describe and narrate various alternate embodiment of the present invention.Should admit that these alternate embodiment do not mean that and comprise all possible modification and the accommodation that can make the present invention.More exactly, these alternate embodiment only mean modification and the accommodation that has proved that some is possible.

Referring to Figure 23, in a kind of alternate embodiment, the electric-conductor 1880 of wafer clamp 1604 is described to not have seal 1888 (Figure 18 A).In addition, spring 2302 applies electric charge to electric-conductor 1880.Lead 1890 shown in contrast Figure 18 C, when wafer clamp 1604 was opened, spring 2302 was mentioned electric-conductor 1880 fully.

Referring now to Figure 24,, in another kind of alternate embodiment, wafer clamp 1604 is described to contain the seal 1884 of Z-section.Compare the position that can keep spring part 1882 more reliably with the seal 1884 (Figure 18 A) in L shaped cross section.Yet should admit, can form the seal 1884 that contains various cross sections.To describe and narrate many possible cross sections with regard to this respect below.

Referring now to Figure 25,, in also having another kind of alternate embodiment, wafer clamp 1604 is described to contain the

pipeline

1832 and 1852 that forms in top 1858.Yet should admit, can form 832 and 1852 by various forms.For example, can form groove in 1858 surfaces along the top.。Pipeline 1832 and 1852 can be the pipe that embeds groove.In this manner,

pipeline

1832 and 1852 can be in place more reliably.

Referring now to Figure 26,, in another kind of alternate embodiment was arranged again, wafer clamp 1604 was described to contain useful nut 2602 and is fixed on bar 1806 on the bottom 1856.The end of bar 1806 is all sealed by sealing cap 2604 with nut 2602 in case contact electrolyte during plating and/or electropolishing.

Referring now to Figure 27,, in a kind of alternate embodiment, alternate embodiment shown in Figure 26 is described to contain the seal 1884 of Z-section.As mentioned above, this cross section can keep the position of spring part 1882 more reliably.

Referring now to Figure 28,, in another kind of alternate embodiment, wafer clamp 1604 is described to contain pipeline 1852.Therefore, when wafer clamp 1604 was closed, providing vacuum and/or depressed gas to pipeline 1852 earlier was wafer clamp 1604 power altogether with increasing.After plating and/or electropolishing, can supply with barotropic gas to help to blow away the electrolyte on the wafer clamp 1604 to pipeline 1852.

Referring now to Figure 29,, in also having another kind of alternate embodiment, wafer clamp 1604 is described to contain pipeline 2902, to provide vacuum and/or depressed gas and barotropic gas to wafer 1602 surfaces.Therefore, after wafer clamp 1604 is closed, provide vacuum and/or depressed gas, to add ambassador's wafer clamp 1604 power altogether to pipeline 1852 and 2902.After plating and/or electropolishing, can supply with barotropic gas to help to blow away the electrolyte on the wafer clamp 1604 to pipeline 1852.Then, open wafer clamp 1604, the gap is 1～3mm, is preferably 1.5mm.After wafer clamp 1604 is opened, can supply with barotropic gas to help to take off wafer 1602 to pipeline 2902.

Referring now to Figure 30,, in another kind of alternate embodiment was arranged again, wafer clamp 1604 was described to contain single lead 3002.Therefore, can provide vacuum and/or depressed gas and barotropic gas to cavity 3004 and wafer 1602 surfaces simultaneously.

Referring to Figure 31～33, a kind of typical embodiments of plating and/or electropolishing platform 102 has been described in more detail.As mentioned above, plating and/or electropolishing platform 102 contain one or more plating and/or electropolishing groove 112.Or rather, in this typical embodiments, plating and/or electropolishing platform 102 comprise three plating and/or electropolishing grooves 112 that are contained on the framework 3202.Yet, as described earlier, the plating and/or the electropolishing groove 112 of any number can be contained on the framework 3202 according to concrete application.

In this typical embodiments, electroplate and/or electropolishing platform 102 also comprises guide rail 3204 and cylinder 3206 so that wafer clamp assembly 1600 moves.Or rather, cylinder 3206 is converted to along being contained in moving of guide rail 3204 on the framework 3202 wafer clamp assembly 1600.In this manner, shown in Figure 32 A and 32B, wafer clamp assembly 1600 and wafer clamp 1604 can be mentioned from electrolyte container 1608, so that maintenance is electroplated and/or electropolishing groove 112, comprise wafer clamp assembly 1600 and wafer clamp 1604.More properly, in Figure 32 B, electroplate and/or electropolishing groove 112 is described to wafer clamp assembly 1600 and is raised and is shown in an open position.In Figure 32 A, it is in the closed position on electrolyte container 1608 that plating and/or electropolishing groove 112 are described to wafer clamp assembly 1600.Yet should admit, can use various actuators to mention wafer clamp assembly 1600.

Referring to Figure 31 A, 32A and 33A, plating and/or electropolishing groove 112 comprise electrolyte container 1608 and wafer clamp assembly 1600.Shown in Figure 32 A, wafer clamp assembly 1600 comprises cover plate 1810 to cover electrolyte container 1608.Like this, cover plate 1810 comprises an exhaust outlet 3208, to get rid of from the steam in the electrolyte container 1608.In this manner, but electroplate and/or electropolishing platform 102 in each plating and/or electropolishing groove 112 independent exhaustion all, whole like this plating and/or electropolishing platform 102 (Figure 32 A and 33A) just not quite need large-scale gas extraction system.

Shown in Figure 31 A and 32A, wafer 1602 can through slit 1892 send into electrolyte container 1608 and by taking-up.Or rather, as mentioned above, manipulator 106 with wafer 1602 send into electrolyte container 1608 and by taking-up.Though slit 1892 is described to be formed on the electrolyte container 1608, also can be formed on the cover plate 1810.

As described earlier, wafer clamp 1604 is held wafer 1602 (Figure 18 A).Referring to Figure 31 A, in this typical embodiments, wafer clamp assembly 1600 is fallen in the electrolyte container 1608 to electroplate and/or electropolishing wafer.After finishing plating and/or electropolishing, wafer clamp assembly 1600 raises.To take off the wafer 1602 and the new wafer 1602 of packing into.

Referring now to Figure 37,, as mentioned above, wafer clamp assembly 1600 (Figure 31 A) comprises carriage 1816.In this typical embodiments, carriage 1816 is through axle 1802 link to each other with wafer clamp 1604 (Figure 18 A).Or rather, more will describe in detail as following, axle 1802 is fixed on the top 1858 of wafer clamp 1604.In addition, slip ring assembly 1838 is fixed on the carriage 1816.Therefore, axle 1802 is placed in the slip ring assembly 1838.

Referring now to Figure 35,, should admit that the part of wafer clamp assembly 1600 is in below the cover plate 1810.Referring now to Figure 34,, in this typical embodiments, carriage 1816 comprises guide rail 1826.Or rather, in this typical embodiments, each guide rail 1826 comprises the bar 3402 that is located in the axle bush 3404.Bar 3402 is contained on the cover plate 1810, and axle bush 3404 links to each other with carriage 1816.In addition, in this typical embodiments, have four guide rails 1826.Yet should admit,, can use the guide rail 1826 of any number according to concrete application.

Referring now to Figure 35,, being equipped with motor 1828 is that carriage 1816 moves along guide rail 1826.Or rather, motor 1828 engages with guide rail 1826 carriage 1816 is moved.In addition, as mentioned above, in this typical embodiments, carriage 1816 links to each other with carriage 1906.Or rather, carriage 1816 links to each other with 1904 through connector 1902 with 1906, enables to move carriage 1816 and 1906.As described earlier,

connector

1902 and 1904 has reduced

carriage

1816 and 1906 and has been stuck in possibility on the guide rail 1826.

Referring now to Figure 37,, as mentioned above, is equipped with the wafer clamp 1604 of rotating.Referring now to Figure 35,, is equipped with motor 1836 and makes wafer clamp 1604 rotate (Figure 37).Or rather, in this typical embodiments, motor 1836 rotates axle 1802 through driving-belt 1834.Referring to Figure 37, axle 1802 is fixed on the top 1858 of wafer clamp 1604 again.In addition, axle 1802 rotates in slip ring assembly 1838.

Continuation is referring to Figure 37, and as mentioned above, wafer clamp 1604 comprises a plurality of spring assemblies 1894, and wafer clamp 1604 is opened and closed.Or rather, in this typical embodiments, wafer clamp 1604 comprises six spring assemblies 1894.Yet should admit,, can use the spring assembly 1894 of any number according to concrete application.

Continuation is referring to Figure 37, and in this typical embodiments, each spring assembly 1894 all comprises bar 1806, and the one end is bar head but not the collar 1804 (Figure 18 A).Or rather, referring to Figure 40 A and 40B, an end of bar 1806 is fixed on the bottom 1856 of wafer clamp 1604.Its other end comprises a bar head 4002.In addition, spring 1808 is enclosed within on the bar 1806, places between top 1858 and the bar head 4002.Therefore, when wafer clamp 1604 in the period of the day from 1 p.m. to 3 p.m. end, spring 1808 opens, the application of force makes top 1858 and bottom 1856 keep closing.Along with wafer clamp 1604 raises, bar head 4002 finally touches the downside (Figure 34) of cover plate 1810.Therefore, spring 1808 compressions, bar 1806 separates top 1858 and bottom 1856 and opens wafer clamp 1604.

As mentioned above, referring to Figure 37, except the power that spring assembly 1894 is executed, also provide vacuum and/or decompression that wafer clamp 1604 is lumped together.Referring to Figure 41, in this typical embodiments, the cavity 1830 that forms to seal 4104 provides vacuum and/or decompression.In description early and shown in Figure 18 A～18V, in bottom 1856, form cavity 1830, and by seal 1878 sealings.By comparison, again referring to Figure 41, seal 4104 can be easily with any suitable securing member and/or method, as the bottom 1856 of packing into such as screw, bolt, bonding agent.Or rather, in this typical embodiments, join with seal 4104 with a ring 4106, available suitable securing member such as screw, bolt etc. will encircle 4106 and be fastened on the bottom 1856.Ring 4106 helps to disperse near seal 4104 power that applied by securing member.In addition, it is more cheap and more reliable than form cavity 1830 in bottom 1856 to use seal 4104.Seal 4104 can comprise any submissive material such as fluorine (fluorine carbon) rubber, silicon rubber etc.

Referring to Figure 42, as mentioned above, can provide vacuum and/or decompression to check and/or to improve the sealing of seal 1884 formation to cavity 1892.In addition, also as mentioned above, can provide Compressed Gas,, improve sealing, the electrolyte that purge is residual and other various purposes that seal 1884 forms with the sealing of checking that seal 1884 forms to cavity 1892.

Yet, when when cavity 1892 provides vacuum and/or depressed gas, but at 1852 some vacuum of seepage of wafer 1602 and top and/or depressed gas.Like this, even stopped providing vacuum and/or depressed gas, when wafer clamp 1604 (Figure 37) when being shown in an open position, wafer 1602 can be attached on the top 1852, so just is difficult for taking out wafer 1602.Referring to Figure 46～48, be attached on top 1852 (Figure 42) for preventing wafer 1602 (Figure 42), can be at wafer 1602 (Figure 42) and top 1852 (Figure 42) add a plate 4600 that has a lines.In this embodiment, lines plate 4600 with whole surface that wafer 1602 (Figure 42) contacts on formed multiple tracks groove 4602.Like this, vacuum and/or the depressed gas that leaks into wafer 1602 (Figure 42) back side all can easily disappear.Therefore, wafer 1602 (Figure 42) just is not easy to be attached to (Figure 42) on the top 1852.

Again referring to Figure 41 and 42, in this typical embodiments, can be respectively through joint 4102 (Figure 41) with 4202 (Figure 42 provides vacuum, depressed gas and/or Compressed Gas to cavity 1830 and 1892.Referring now to Figure 38,, provides vacuum decompression gas and/or Compressed Gas through official title 1852 to joint 4102 (Figure 41) and joint 4202 (Figure 42) through pipeline 1832 with from pipeline 1876 from pipeline 1874 respectively.

Referring to Figure 43, the

pipeline

1874 and 1876 that forms in axle 1802 through slip ring assembly 1838 provides vacuum, depressed gas and/or Compressed Gas.As mentioned above, outfit slip ring assembly 1838 makes vacuum and/or depressed gas is provided in axle 1802 when axle 1802 rotates.Or rather, as mentioned above, seal 1842 forms cavity 1866 and 1868 (Figure 18 B) 1838 of axle 1802 and slip ring assemblies, can through enter the

mouth

1870 and 1872 to introducing vacuum and/or depressed gas.

Referring to Figure 16, as mentioned above, keep wafer 1602 parallel with electrolyte 1656 surfaces in the electrolyte container 1608, help to improve the uniformity of plating and/or electrolytic brightening process.In this respect, referring to Figure 43, can dispose carriage 1816 parallel with wafer clamp 1858.

Referring to Figure 44, carriage 1816 and aiming at of slip ring assembly 1838 be available regulates a plurality of screws 4312 respectively and a plurality of dog screw 4314 is adjusted.Or rather, the gap between carriage 1816 and the slip ring assembly 1838 can be with adjustment screw 4312 and dog screw 4314 increase and decrease respectively.In this embodiment, use three screws 4312 and three dog screws 4314 basically just can be at least in the relation of all directions adjusted slip ring assembly 1838 with carriage 1816.Yet should admit, can use various apparatus and method to come bracket 1816 to aim at slip ring assembly 1838.

Referring to Figure 45, top 1858 and axle 1802 to will definitely be by regulating a plurality of screws 4304 respectively and a dog screw 4306 is adjusted.In this embodiment, adjustment screw 4304 and dog screw 4306 are adjusted top 1858 and are lacked aiming at of stem 4302.Or rather, available screw 4304 and dog screw 4306 are adjusted the gap between top 1858 and the short stem 4302.In this embodiment, use three screws 4304 and be positioned at top 1858 and can adjust top 1858 basically and lack aiming at of stem 4302 from all directions with the dog screw 4306 at short stem 4302 centers.

In addition, in this embodiment, a plurality of bolts 4308 of short stem 4302 usefulness link to each other with axle 1802.In this manner, can remove top 1858 and the aligning of need not resetting from axle 1802.As described earlier, wafer clamp 1604 (Figure 37) can be taken out because of a variety of causes such as inspection, repairing, maintenance etc.For ease of later aligning again, referring to Figure 43, in this embodiment, short stem 4302 is connected with the mortise Y joint with axle 1802 usefulness tenons.In addition, 4308 on bolt and short stem 4302 and spools 1802 contact.In this manner, regulating bolt 4308 does not influence top 1858 and lacks aiming at of stem 4302.

After having described the various typical embodiments of wafer clamp assembly like this, the various typical embodiments of wafer clamp 1604 will be described below.Referring now to Figure 49,, wafer clamp 1604 comprises bottom 1856 and top 1858.Bottom 1856 is made and is contained perforate, with the bottom surface of exposing wafer 1602 during plating and/or electropolishing.

In a kind of typical embodiments, bottom 1856 and top 1858 are by any suitable electric insulation and acidproof erosion resistant, make as pottery, polytetrafluoroethylene (trade name TEFLON), the poly-fluorine indenes ethene (PVDF) of polyvinyl chloride (PVC), polypropylene etc.As selection, bottom 1856 and top 1858 can be applied by any electric conducting material (as metal, metal alloy etc.) and make with electric insulation and acidproof erosion resistant.In this typical embodiments, bottom 1856 and top 1858 are to be made by the sandwich material of metal level and plastic layer.Metal level provides globality and intensity.Plastic layer provides the protection to electrolyte.

According to various aspects of the present invention, wafer clamp 1604 comprises spring 1882, electric-conductor 1880 and seal 1884.As described earlier, the present invention is particularly suitable for the purposes relevant with holding wafer.In general, semiconductor wafer is essentially circular.Therefore, the various parts of wafer clamp 1604 (that is, bottom 1856, seal 1884, electric-conductor 1880, spring part 1882 and top 1858) all are expressed as circle basically.Yet should admit that the various parts of wafer clamp 1604 can comprise different shape according to concrete application.For example, referring to Figure 67, wafer 6700 can have been made a straight flange 6702.Like this, the various parts of wafer clamp 1604 can be made and be suitable for straight flange 6702.

Referring now to Figure 51,, when wafer 1602 was placed between bottom 1856 and the top 1858, according to one aspect of the present invention, spring part 1882 preferably contacted with wafer 1602 along wafer 1602 edges.Spring part 1882 preferably also contacts with electric-conductor 1880.Like this, when electric-conductor 1880 was applied with electric charge, electric charge just conducted to wafer 1602 through spring part 1882.

Shown in Figure 51, in this typical embodiments, spring part 1882 is located between the lip 1880a of wafer 1602 and electric-conductor 1880.Therefore, when making bottom 1856 and top 1858 altogether when exerting pressure, spring part 1882 electrically

contacts wafer

1602 and 1880 maintenances of electric-conductor.Or rather, the top of coil shape spring part 1882 contacts with lip 1880a with wafer 1602 respectively with the bottom.In addition, spring part 1882 can engage to form with any suitable method such as soldering, melting welding etc. with lip 1880a and electrically contact preferably.

Wafer 1602 can change with the number of coil shape spring part 1882 with the number of contacts of electric-conductor 1880.In this manner, the electric charge that imposes on wafer 1602 can be evenly distributed near the wafer outer rim.For example, for the wafer of 200mm, apply the electric charge that is equivalent to 1～10A qualitatively.If spring part 1882 forms 1000 contacts with wafer 1602, then for the wafer of 200mm, the electric charge of being executed is decreased to and is equivalent to each contact 1～10mA.

In this typical embodiments, electric-conductor 1880 is narrated so far and description has lip 1880a.Yet should admit that electric-conductor 1880 can comprise that various structures are to electrically contact with spring part 1882.For example, electric-conductor 1880 can be made into does not have lip 1880a.In this structure, the side of electric-conductor 1880 can form with spring part 1882 and electrically contact.And electric-conductor 1880 can remove together.Electric charge can directly be applied on the spring part 1882.Yet in this structure, the part that applies electric charge at spring part 1882 can form focus.

Spring part 1882 can be made by any conduction and erosion resistant.In this typical embodiments, spring part 1882 is to be made by metal or metal alloy (as stainless steel, spring steel, titanium etc.).Spring part 1882 also can apply with erosion resistant (as platinum, gold etc.).According to one aspect of the present invention, spring part 1882 is made into the coil shape spring of ring-type.Yet conventional coil shape spring cross section can change along coil length.Or rather, general, conventional coil shape spring has oval cross section, and major diameter and minor axis are arranged.The part of online wound spring, the major diameter of oval cross section and minor axis can be got vertical and horizontal respectively.Yet this can the typically length direction distortion and the rotation of wound spring along the line of total oval cross section.So, another part of online wound spring, the major diameter of oval cross section and minor axis can be got horizontal and vertical respectively.This inhomogeneities in coil shape spring cross section can cause with the inhomogeneous of wafer 1602 and electrically contacts, and causes uneven plating.

Production has uniform cross-section on its length direction coil shape spring is difficult, and cost does not allow yet.Like this, according to one aspect of the present invention, spring part 1882 is made of a plurality of coil shape springs, to keep basically cross section uniformly.In one embodiment of the invention, when spring part 1882 placed on the lip 1880A top, the electric charge of executing was to be conducted through the total length of spring part 1882 by lip 1880a.Therefore, in this structure, a plurality of coil shape springs need not to be electrical interconnection.Yet as described earlier, in another kind of structure of the present invention, electric charge can directly be applied on the spring part 1882.In this structure, a plurality of coil shape springs are as electrical connections such as soldering, melting welding with any suitable method.In this embodiment, spring part 1882 comprises a plurality of coil shape springs, long 1～2 inch of each coil shape spring.Yet should admit that spring part 1882 can comprise the coil shape spring of any length of any number according to concrete application.And as described earlier, spring part 1882 can comprise any suitable flexibility and electric conducting material.

Referring to Figure 50 and 51, spring part 1882 can comprise spring(-supported) mount 5002.In this typical embodiments, when spring part 1882 was coil shape spring, spring(-supported) mount 5002 can be made the bar that passes coil shape spring spiral center.Spring(-supported) mount 5002 is convenient to control spring spare 1882, especially when spring part 1882 comprises a plurality of coil shape spring.In addition, spring(-supported) mount 5002 provides support structure to reduce undesirable spring part 1882 distortion.In this typical embodiments, spring(-supported) mount 5002 is preferably made by erosion resistant (as platinum, titanium, stainless steel etc.).And spring(-supported) mount 5002 can be conduction or non-conductive.

Electric-conductor 1880 can be made by any erosion resistant that conducts electricity easily.In this typical embodiments, electric-conductor 1880 is to be applied by metal or metal alloy (as titanium, stainless steel etc.) to make with erosion resistant (as platinum, gold etc.).

Electric charge can be applied on the electric-conductor 1880 through transmission line 5104 and electrode 5102.Should admit that transmission line 5104 can comprise any electric conductor easily.For example, transmission line 5104 can comprise the lead that copper, aluminium, gold etc. are made.In addition, transmission line 5104 can link to each other with 1644 (Figure 16) with

power supply

1640,1642 with any method easily.For example, shown in Figure 18 A, transmission line 5104 can be through the top 1858 and along the top 1858 upper surface cablings.

Electrode 5102 is preferably made flexible.Therefore, when making bottom 1856 and top 1858 altogether when exerting pressure, electrode 5102 submissively keeps and the electrically contacting of electric-conductor 1880.In this respect, electrode 5102 can comprise flat spring assembly, coil shape spring assembly etc.Electrode 5102 can be made by any electric conducting material easily (as any metal, metal alloy etc.).In this typical embodiments, electrode 5102 is made by erosion resistant (as titanium, stainless steel etc.).In addition, the electrode 5102 of any number can be at the top be set, to apply electric charge around 1858 to electric-conductor 1880.In this typical embodiments, 1858 are provided with four electrodes 5102 at interval with about 90 ° approximately equal on every side at the top.

As mentioned above, be electroplated metal layer, wafer 1602 is immersed in the electrolyte and applies electric charge.When the wafer 1602 charged current potentials that have are higher than

electrode

1632,1634 and 1636 (Figure 16), the metal ion in the electrolyte is migrated to wafer 1602 surfaces and is formed metal level.Yet,, will cause short circuit when applying electric charge if spring part 1882 and electric-conductor 1880 are exposed in the electrolyte.In addition, during electroplating technology, when wafer 1602 contained the metal seed layer, the metal seed layer can play anode, and spring part 1882 can play negative electrode.Like this, can form metal level on spring part 1882, the seed layer on the wafer 1602 can be by electropolishing (that is, removing).Spring part 1882 short circuits and the seed layer of removing on the wafer 1602 can be reduced in the metal level uniformity that forms on the wafer 1602.

Like this, according to various aspects of the present invention, seal 1884 makes spring part 1882 and electric-conductor 1880 and electrolyte insulation.Seal 1884 is preferably made by erosion resistant such as fluorine (fluorine carbon) rubber, silicon rubber etc.Moreover though in this typical embodiments shown in Figure 51, seal 1884 contains L shaped cross section, should admit, seal 1884 also comprises different shape and structure according to concrete application.Some example of seal 1884 various structures is shown in Figure 53 A～53G.Yet should admit that the various structures shown in Figure 53 A～53G are some examples, and not mean that every kind and all possible alternative structure of expression seal 1884.

As mentioned above and shown in Figure 51, spring part 1882 contacts with wafer 1602 along wafer 1602 outer rims with seal 1884.Or rather, spring part 1882 contacts with the width district 5106 of seal 1884 with wafer 1602 outer rims.Generally, the regional later microelectronic structure etc. that can not be used for making of this of wafer 1602.Like this, according to one aspect of the present invention, 5106 sub-fractions that account for wafer 1502 total surface areas in width district.For example, for the wafer of 300mm, width district 5106 remains between 2～6mm.Yet should admit that according to concrete application, width district 5106 can account for any ratio of wafer 1602 total surface areas.For example, in one application, the usable area of the comparable wafer 1602 of amount that is deposited on the metal level on the wafer 1602 is more important.Like this, the major part of wafer 1602 surface areas can be used to contact with seal 1884 with spring part 1882, with the large charge of accepting to apply.

Referring now to Figure 54,, represents with the form of flow process with the PROCESS FOR TREATMENT step that wafer clamp 1604 (Figure 51) is carried out.Referring to Figure 51, open wafer clamp 1604 (Figure 54, frame 5402) to accept pending wafer 1602.Or rather, bottom 1856 can descend with respect to top 1858.As selection, also can rise with respect to bottom 1856 in top 1858.As described earlier, but the sample the whole bag of tricks is opened wafer clamp 1604, as pneumatic, spring, vacuum, magnetic force etc.

If wafer clamp 1604 is empty (Figure 54, ' being ' branches of decision box 5404～5408), then provide or the pending new wafer 1602 of packing into (Figure 54, frame 5408).Yet,, take out the wafer (Figure 54, ' denying ' branch of decision box 5404～5406) that previous processed is crossed, the new wafer 1602 of packing into then (Figure 54, frame 5408) by wafer clamp 1604 if wafer clamp 1604 is equipped with the wafer that previous processed is crossed.As mentioned above, finish the operation of wafer 1602 with manipulator 106 (Figure 16).Moreover, can there be cassette wafer case 116 (Fig. 3) to obtain wafer 1602 and wafer 1602 is returned cassette wafer case 116 (Fig. 3).

After wafer clamp 1604 is packed wafer 1602 into, can close wafer clamp 1604 (Figure 54, frame 5410).As described earlier, can rise with respect to top 1858 in bottom 1856.As selection, top 1858 can descend with respect to bottom 1856.As mentioned above, when wafer clamp 1604 was closed, spring part 1882 formation electrically contacted with wafer 1602 and electric-conductor 1880.In addition, electric-conductor 1880 has formed and the electrically contacting of electrode 5102.

After wafer clamp 1604 was closed, wafer clamp 1604 was fallen into (Figure 54, frame 5412) in the electrolyte container 1608 (Figure 16).As mentioned above, wafer 1602 immerses electrolyte.Moreover as mentioned above, seal 1884 prevents that electrolyte from contacting with spring part 1882 and electric-conductor 1880.

When wafer 1602 immersed in the electrolyte, electric charge was applied to (Figure 54, frame 5414) on the wafer 1602.Or rather, in this typical embodiments, electric charge is applied on the wafer 1602 through transmission line 5104, conductor 5102, electric-conductor 1880 and spring part 1882.As mentioned above, spring part 1882 forms a plurality of contacts so that impose on the CHARGE DISTRIBUTION of wafer 1602 and get more even in wafer 1602 outer rims.In addition, as mentioned above, spring part 1882 forms a plurality of contacts with electric-conductor 1880 so that impose on the CHARGE DISTRIBUTION of spring part 1882 and get more even.Should admit, can before or after wafer clamp 1604 is fallen into electrolyte container 1608 (Figure 16), apply electric charge.

As described earlier, wafer clamp 1604 is rotatable so that the metal level of electroplating on wafer 1602 (Figure 16) is more even.As shown in figure 16, in this typical embodiments, wafer clamp 1604 can be rotated around the z axle.In addition, wafer clamp 1604 can be along the x-y plane vibration.

Referring to Figure 51, after wafer 1602 plating and/or electropolishing, 1604 of wafer clamp can be mentioned (Figure 54, frame 5416) from electrolyte container 1608 (Figure 16) again.According to another aspect of the present invention, supply with dry gas (as argon, nitrogen etc.) to remove residual electrolyte.Or rather, referring to Figure 52 A, supply with dry gas to remove seal 1884 and the residual electrolyte of wafer 1602 joints through nozzle 5202.Should admit, can use the nozzle 5202 of any number according to concrete application.In addition, when nozzle was supplied with dry gas, wafer clamp 1604 was rotatable.Like this, nozzle 5202 can be fixing, also can be movable.

After wafer clamp 1604 is mentioned, open wafer clamp 1604 (Figure 54, frame 5402).Take out the wafer of handling (Figure 54, ' denying ' branch of decision box 5404～5406).Can supply with dry gas (as argon, nitrogen etc.) to remove residual electrolyte.Or rather, referring to Figure 52 B, nozzle 5204 is supplied with dry gas to remove residual electrolyte on electric-conductor 1880, spring part 1882 and the seal 1884.In addition, when nozzle 5204 was supplied with dry gas, wafer clamp 1604 was rotatable.Like this, nozzle 5204 can be fixing, also can be movable.

(Figure 54, frame 5408) can repeat whole technical process after new wafer is provided.Yet should admit, can make various modifications and not deviate from design of the present invention and scope telling the processing step shown in 4.

In description below and the relevant accompanying drawing, will describe and the various alternate embodiment of narration each side of the present invention.Yet should admit that these alternate embodiment do not mean that all various modifications that proof can be made the present invention.More exactly, these alternate embodiment just proved in many may the modification certain some and do not deviate from design of the present invention and/or scope.

Referring now to Figure 55,, in a kind of typical alternate embodiment of the present invention, according to each side of the present invention, wafer clamp 5500 comprises purge pipeline 5506, nozzle 5508 and nozzle 5510.In this typical embodiments, purge pipeline 5506,

nozzle

5508 and 5510 are sent into dry gas (as argon, nitrogen etc.) to spring part 5514 and seal 5504.In this manner, after handling wafer 1602, can blow away the residual electrolyte of spring part 5514 and seal 5504.As mentioned above, keep spring part 5514 not have electrolyte, be convenient to electroplate more equably.In addition, the electrolyte of blowing away seal 5504 can seal when handling next wafer better.Shown in Figure 55, in this typical embodiments, purge pipeline 5506,

nozzle

5508 and 5510 all are made in the electric-conductor 5502.In addition, purge pipeline 5506 can link to each other with pressurized pipeline 1852 (Figure 18 A).Yet should admit that wafer clamp 5500 can suitably be equipped with purge pipeline 5506,

nozzle

5508 and 5510 and do not deviate from design of the present invention and/or scope in every way.And, should admit, in wafer clamp 5500, can make purge pipeline 5506, the

nozzle

5508 and 5510 of any number.

Referring now to Figure 56,, in the typical alternate embodiment of another kind of the present invention, according to each side of the present invention, wafer clamp 5600 comprises purge pipeline 5602 and a plurality of nozzle 5604.In this typical embodiments, purge pipeline 5602 and a plurality of nozzle 5604 are sent into dry gas (as argon, nitrogen etc.) to seal 5606.In this manner, handling wafer 1602 and after wafer clamp 5600 taking-ups, can blow away the residual electrolyte on seal 5606 tops.Shown in Figure 56, in this typical embodiments, purge pipeline 5602 and a plurality of nozzle 5604 can be made in the top 5608.Yet should admit that wafer clamp 5600 can suitably be equipped with purge pipeline 5602 and a plurality of nozzle 5604 in every way and not deviate from design of the present invention and/or scope.And, should admit, in wafer clamp 5600, can make the purge pipeline 5602 and the nozzle 5604 of any number.

Referring now to Figure 57,, also have in the another kind of typical alternate embodiment in the present invention, according to each side of the present invention, wafer clamp 5700 is surrounded by purge pipeline 5702 and a plurality of nozzle 5704 and 5710.In this typical embodiments, purge pipeline 5702 and a plurality of nozzle 5704 and 5710 are sent into dry gas (as argon, nitrogen etc.) respectively to seal 5706 and spring part 5712.In this manner, handling wafer 1602 and after wafer clamp 5700 taking-ups, can blow away the residual electrolyte on seal 5706 and spring part 5712 tops.Shown in Figure 57, in this typical embodiments, purge pipeline 5702 and a plurality of nozzle 5704 and 5710 can be made in the top 5708.Yet should admit that wafer clamp 5700 can suitably be equipped with purge pipeline 5702 and a plurality of nozzle 5704 and 5710 and do not deviate from design of the present invention and/or scope in every way.And, should admit, in wafer clamp 5700, can make purge pipeline 5702 and nozzle 5704 and 5710 of any number.

Referring now to Figure 58,, have again in the another kind of typical alternate embodiment in the present invention, according to each side of the present invention, wafer clamp 5800 is surrounded by purge pipeline 5802 and a plurality of sealing ring 5804 and 5806.In this typical embodiments, sealing ring 5806 has formed the sealing of 5810 of electric-conductor 5808 and bottoms.Equally, sealing ring 5804 has formed the sealing at 5812 at electric-conductor 5808 and top.So send into barotropic gas and leak detection to purge pipeline 5802, just can check the airtight quality of 5814 of wafer 1602 and seals.As selection, can bleed to purge pipeline 5802 and produce the airtight quality that negative pressure is checked 5814 of wafer 1602 and seals.If use back one process, be inhaled into purge pipeline 5802 for preventing electrolyte, after handling wafer 1602, should stop to bleed of purge pipeline 5802, before taking out wafer 1602, send into barotropic gas then through purge pipeline 5802.Handling wafer 1602 and after wafer clamp 5800 taking-ups, sending into dry gas (as argon, nitrogen etc.), can blow away the residual electrolyte of spring part 5816 and seal 5814 through purge pipeline 5802.

Referring now to Figure 59,, in the another kind of typical alternate embodiment that the present invention also has again, according to each side of the present invention, wafer clamp 5900 comprises trapezoidal seal 5902.When handling 5900 rotations of wafer 1602 back wafer clamp, trapezoidal seal 5902 is convenient to remove the residual electrolyte of seal 5902.In this typical embodiments, the angle 5904 of seal 5902 can be 0～60 ° scope, is preferably 20 °.

Referring now to Figure 60,, also have in the another kind of typical alternate embodiment in the present invention, according to each side of the present invention, wafer clamp 6000 comprises purge pipeline 6002.In this typical embodiments, purge pipeline 6002 through the bottom 6006 and seal 6004 form.Send into barotropic gas through washing pipeline 6002, can check the airtight quality of 6004 of wafer 1602 and seals.As selection, can bleed to purge pipeline 6002 and produce the airtight quality that negative pressure is checked 6004 of wafer 1602 and seals.As mentioned above,, be inhaled into purge pipeline 6002, after handling wafer 1602, should stop to bleed of purge pipeline 6002, before taking out wafer 1602, send into barotropic gas then through purge pipeline 6002 for preventing electrolyte if use back one process.

Referring now to Figure 61,, in the another kind of typical alternate embodiment that the present invention also has, according to each side of the present invention, wafer clamp 6100 comprises purge pipeline 6102, purge pipeline 6108 and a plurality of sealing ring 6116 and 6104.In this typical embodiments, sealing ring 6116 has formed the sealing at 6110 at electric-conductor 6118 and top.Equally, sealing ring 6104 has formed the sealing of 6106 of electric-conductor 6118 and bottoms.So, the airtight quality that available purge pipeline 6102 and/or purge pipeline 6108 inspection wafers 1602 and seal are 6112.

Or rather, in a kind of structure, can send into Compressed Gas and check airtight quality to purge pipeline 6102 and purge pipeline 6108.In another kind of structure, can bleed the generation negative pressure to check the airtight quality of 6112 of wafer 1602 and seals to purge pipeline 6102 and purge pipeline 6108.In also having another kind of structure, can send into Compressed Gas to one of purge pipeline 6102 or purge pipeline 6108, and another generation negative pressure of bleeding.When hunting leak with negative pressure, suck purge pipeline 6102 and/or purge pipeline 6108 for preventing electrolyte, after handling wafer 1602, should stop to bleed, before taking out wafer 1602, send into barotropic gas then through purge pipeline 6102 and/or purge pipeline 6108.Handling wafer 1602 and after wafer clamp 6100 taking-ups, sending into dry gas (as argon, nitrogen etc.), can blow away the residual electrolyte of seal 6112 and spring part 6114 through purge pipeline 6102 and/or purge pipeline 6108.

Referring now to Figure 62,, in the typical alternate embodiment of another kind of the present invention, according to each side of the present invention, wafer clamp 6200 comprises spring part 6208, electric-conductor 6210 and seal 6206.In this typical embodiments, spring part 6208 and electric-conductor 6210 all place in the seal 6206.The advantage of this structure is that spring part 6208, electric-conductor 6210 and seal 6206 can assemble in advance.

Wafer clamp 6200 also comprises purge pipeline 6214 and a plurality of nozzle 6212 through seal 6214 and electric-conductor 6210 formation.Send into barotropic gas through purge pipeline 6214, can check the airtight quality of 6206 of wafer 1602 and seals.As selection, can bleed to purge pipeline 6214 and produce the airtight quality that negative pressure is checked 6206 of wafer 1602 and seals.As mentioned above,, suck purge pipeline 6214, after handling wafer 1602, should stop to bleed of purge pipeline 6214, before taking out wafer 1602, send into barotropic gas then through purge pipeline 6214 for preventing electrolyte if use back one technology.

Referring now to Figure 63,, also have in the another kind of typical alternate embodiment in the present invention, wafer clamp 6300 comprises purge pipeline 6302 and a plurality of nozzle 6304.In this typical embodiments, purge pipeline 6302 and a plurality of nozzle 6304 are sent into dry gas (as argon, nitrogen etc.) on seal 6310, electric-conductor 6308 and spring part 6306.In this manner, handling wafer 1602 and after wafer clamp 6300 taking-ups, can blow away the residual electrolyte on seal 6310, electric-conductor 6308 and spring part 6306 tops.Shown in Figure 63, in this typical embodiments, purge pipeline 6302 and a plurality of nozzle 6304 can be made in the top 6312.Yet should admit that wafer clamp 6300 can suitably be equipped with purge pipeline 6302 and a plurality of nozzle 6304 in every way and not deviate from design of the present invention and/or scope.And, should admit, in wafer clamp 6300, can make the purge pipeline 6302 and the nozzle 6304 of any number.

Referring now to Figure 64,, have again in the another kind of typical alternate embodiment in the present invention, wafer clamp 6400 comprises seal 6402.In this typical embodiments, seal 6402 is made has square inside groove to place spring part 6404.The advantage of this structure is to place spring part 6404 more reliably.Yet should admit, can make the seal 6402 of different shape according to concrete application.

Referring now to Figure 65,, also have in the another kind of typical alternate embodiment in the present invention, according to each side of the present invention, wafer clamp 6500 comprises purge pipeline 6502, purge pipeline 6508 and sealing ring 6506.In this typical embodiments, sealing ring 6506 has formed the sealing at bottom 6504 and top 6510.So the airtight quality that wafer 1602 and seal are 6512 can be checked with purge pipeline 6502 and/or purge pipeline 6508.

Or rather, in a kind of structure, can send into Compressed Gas and check airtight quality to purge pipeline 6502 and purge pipeline 6508.In another kind of structure, can bleed the generation negative pressure to check the airtight quality of 6512 of wafer 1602 and seals to purge pipeline 6502 and purge pipeline 6508.In also having another kind of structure, can send into Compressed Gas to one of purge pipeline 6502 or purge pipeline 6508, and another generation negative pressure of bleeding.When hunting leak with negative pressure, suck purge pipeline 6502 and/or purge pipeline 6508 for preventing electrolyte, after handling wafer 1602, should stop to bleed, before taking out wafer 1602, send into barotropic gas then through purge pipeline 6502 and/or purge pipeline 6508.Handling wafer 1602 and after wafer clamp 6500 taking-ups, sending into dry gas (as argon, nitrogen etc.), can blow away the residual electrolyte of seal 6512 and spring part 6514 through purge pipeline 6502 and/or purge pipeline 6508.

Referring now to Figure 66,, in the another kind of typical alternate embodiment that the present invention has again, according to each side of the present invention, wafer clamp 6600 comprises trapezoidal seal 6602.When handling 6600 rotations of wafer 1602 back wafer clamp, trapezoidal seal 6602 is convenient to remove the residual electrolyte of seal 6602.In this typical embodiments, the angle 6604 of seal 6602 can be 0～60 ° scope, is preferably 20 °.

As described earlier, though the many alternate embodiment have in conjunction with the accompanying drawings been described the present invention, can make various modifications and do not deviate from design of the present invention and/or scope.Therefore, the present invention should not be construed as limited to accompanying drawing and above-mentioned concrete form.

Claims

1. one kind is used to electroplate and/or the plating and/or the electropolishing platform of electropolishing wafer, comprises:

Frame;

At least one is contained in plating and/or electropolishing groove on the frame, and described plating and/or electropolishing groove have electrolyte container and be formed the cover plate that is used to cover on described electrolyte container; And

The cover plate lifting subassembly, be constructed such that described cover plate moves between the primary importance and the second place, wherein said cover plate covers on described electrolyte container when described primary importance, and when in the described second place, described cover plate is raised from described electrolyte container

Wherein said plating and/or electropolishing groove comprise wafer clamp and the wafer clamp assembly that is used to hold wafer, and when described cover plate during in described primary importance, the wafer clamp assembly moves described wafer clamp between first and second positions,

Wherein when described wafer clamp during in described primary importance, described wafer clamp assembly is opened described wafer clamp, and when described wafer clamp during in the described second place described wafer clamp assembly close described wafer clamp.

2. the plating of claim 1 and/or electropolishing platform wherein also comprise at least two and electroplate and/or the electropolishing groove.

3. the plating of claim 2 and/or electropolishing platform are electroplated and/or the electropolishing groove is vertical stacked being contained on the frame at least for wherein said two.

4. the plating of claim 1 and/or electropolishing platform, wherein said cover plate lifting subassembly comprises:

The guide rail that links to each other with described frame with described cover plate; And

With the actuator that described guide rail links to each other, described actuator be constructed such that described cover plate described first and the described second place between move.

5. the plating of claim 4 and/or electropolishing platform, wherein said actuator is a cylinder.

6. the plating of claim 4 and/or electropolishing platform, wherein said guide rail level on described frame is laid, and wherein said actuator make described cover plate described first and the described second place between flatly move.

7. the plating of claim 6 and/or electropolishing platform also comprise:

Be used to hold the wafer clamp of wafer; And

Be connected in a wafer clamp assembly of described wafer clamp, wherein said wafer clamp assembly be configured to when described cover plate during in described primary importance the wafer clamp assembly described wafer clamp is moved between first vertical position and second vertical position, wherein when described wafer clamp during at described first vertical position described wafer clamp assembly open described wafer clamp, and when described wafer clamp during at described second vertical position described wafer clamp assembly close described wafer clamp, and wherein said wafer clamp assembly is installed on the described cover plate, and wherein said actuator makes described wafer clamp, described wafer clamp assembly and cover plate together described first and the described second place between move horizontally.

8. the plating of claim 7 and/or electropolishing platform, wherein said wafer clamp comprises:

The top; And

Bottom, described bottom have the opening that is used for exposing wafer surface when wafer being remained between described top and the described bottom.

9. the plating of claim 8 and/or electropolishing platform, wherein said wafer clamp also comprises the lines plate that is connected in described top.

10. the plating of claim 8 and/or electropolishing platform, wherein said wafer clamp assembly also comprises the spring assembly that is configured to open and close described wafer clamp.

11. the plating of claim 10 and/or electropolishing platform, wherein said spring assembly comprises:

Bar with first and second ends, described first end and described bottom connection close; And

Be arranged on described second end of described bar and the spring between the described top,

Wherein when making that described wafer clamp moves to described first vertical position, described bar makes described top and described bottom be separated and described spring is compressed between described second end and described top of described bar, and

Wherein when making that described wafer clamp moves to described second vertical position, described spring extends so that described top and described bottom connection close.

12. the plating of claim 8 and/or electropolishing platform, wherein said wafer clamp assembly also comprises:

Axle with first and second ends, described first end is fixed in described top;

The carriage that is connected with described second end of described axle; And

With the actuator that described carriage is connected, described actuator be used to make described wafer clamp described first and described second vertical position between move.

13. the plating of claim 12 and/or electropolishing platform, wherein said actuator also comprises:

Guide rail;

Be connected in the driving screw of described carriage; And

Be connected in the motor of described driving screw, wherein said motor makes described driving screw rotate so that described carriage moves along described guide rail.

14. the plating of claim 12 and/or electropolishing platform, wherein said wafer clamp assembly also comprise the runner assembly that is constructed such that described wafer clamp is rotated.

15. the plating of claim 14 and/or electropolishing platform, wherein said runner assembly comprises:

The driving-belt that is connected with described axle; And

The motor that is connected with described driving-belt.

16. the plating of claim 14 and/or electropolishing platform also comprise the slip ring assembly that is connected with described carriage, wherein said axle rotates in described slip ring assembly.

17. the plating of claim 16 and/or electropolishing platform, wherein said slip ring assembly are configured to charge transport to described axle.

18. the plating of claim 17 and/or electropolishing platform, wherein said slip ring assembly comprises the brush group, applies electric charge to described axle when described brush group is formed at described rotation.

19. the plating of claim 16 and/or electropolishing platform, wherein said slip ring assembly are configured to vacuum, depressed gas and/or gas-pressurized are transported at least one inlet that is formed in the described axle.

20. the plating of claim 19 and/or electropolishing platform, wherein said slip ring assembly comprises:

Be formed at least one inlet in the described slip ring assembly;

Be set at a plurality of seals between described slip ring assembly and the described axle, in order at least one graduated cavity of formation between the described inlet in being formed at described slip ring assembly and the described inlet that is formed in the described axle.

21. one kind be used to operate electroplate and/or the electropolishing platform so that electroplate and/or the method for electropolishing semiconductor wafer, described plating and/or electropolishing platform have:

Frame;

At least one is contained in plating and/or electropolishing groove on the frame, and described plating and/or electropolishing groove have electrolyte container and be formed the cover plate that is used to cover on described electrolyte container;

And

The cover plate lifting subassembly,

Described method comprises:

C) use described at least one groove to handle the wafer that is loaded;

D) the handled wafer of unloading from described at least one groove;

E) be that any amount of pending wafer repeats b), c) and d); And

22. the method for claim 21, wherein at least one groove also comprises wafer clamp and is connected in the wafer clamp assembly of described wafer clamp, and b wherein) comprising:

When described wafer clamp is not opened, use described wafer clamp assembly to make described wafer clamp move to first vertical position to open described wafer clamp;

When described wafer clamp is opened, described wafer is received in the described wafer clamp; And

Use described wafer clamp assembly to make described wafer clamp move to second vertical position to close described wafer clamp.

23. the method for claim 22, wherein said wafer clamp also comprises runner assembly, and c wherein) comprising:

When being in second vertical position, described wafer clamp use described runner assembly to make described wafer clamp rotate.

24. the method for claim 23, wherein d) comprising:

Use described wafer clamp assembly to make described wafer clamp move to described first vertical position to open described wafer clamp; And

From described wafer clamp, take out handled wafer.