CN100362613C - Method of manufacturing bus electrode of plasma display board - Google Patents
Method of manufacturing bus electrode of plasma display board Download PDFInfo
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- CN100362613C CN100362613C CNB2004100417745A CN200410041774A CN100362613C CN 100362613 C CN100362613 C CN 100362613C CN B2004100417745 A CNB2004100417745 A CN B2004100417745A CN 200410041774 A CN200410041774 A CN 200410041774A CN 100362613 C CN100362613 C CN 100362613C
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- photoresists
- plasma display
- bus electrode
- display panel
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Abstract
The present invention relates to a manufacturing method for bus electrodes of a plasma display panel, which belongs to a manufacturing method for bus electrodes of an AC plasma display panel and a DC plasma display panel in the process of manufacturing the AC plasma display panel and the DC plasma display panel. The manufacturing method comprises: a. sensitizing adhesives are coated on a transparent conducting film which is covered on the surface of a base plate; b. exposure: a film masking plate with line patterns is laid on the surface of the sensitizing adhesives, and the film masking plate and the sensitizing adhesives are vertically irradiated by ultraviolet light; c. development: developing solutions are used for spraying the processed base plate, and the sensitizing adhesives which are not solidified are removed; d. etching: etching liquids are used for spraying the developed base plate; e. electroplating: the bus electrodes are electroplated at both sides of the transparent conducting electrode by using an electroplating method; f. adhesive removal: a plating piece which is plated is put into adhesive removing liquids to be soaked several minutes to remove the solidified sensitizing adhesives at the surface of the transparent conducting electrode. Therefore, the manufacture of the bus electrodes is completed.
Description
Technical field
The present invention is a kind of in AC and DC plasma display panel manufacture process, to the manufacture method of AC and DC plasma display panel bus electrode, belongs to the technical field that plasma display panel is made.
Background technology
For reducing the resistance of transparency conductive electrode on the plasma display panel prebasal plate, on transparency conductive electrode, do one deck bus electrode usually, the general metal material that conducts electricity very well that adopts, conventional method has silk screen print method, photosensitive silver-colored slurry method and thin film photolithography method.Silk screen print method is made in required electrode pattern on the silk screen of certain order number by the method for exposure, development, make the raw material of bus electrode with conductive silver paste, conductive silver paste is being printed onto on the desired location of substrate through silk screen printing on the screen printer again, printing back drying, sintering obtain the bus electrode that resistance, adhesive force meet the requirements.Photosensitive silver-colored slurry method, whole plate prints certain thickness photosensitive silver-colored conductive paste on substrate, and the oven dry back through exposing, developing, obtains required electrode pattern with the special mask version, again through oversintering, finishes the making of bus electrode.The thin film photolithography method, the method is made raw material with chromium and copper metal, at first sputter chromium plating successively on prebasal plate and transparency conductive electrode, copper, chromium three-layer metal film, behind the surface-coated photoresist, with photoetching process through exposure, development, etching, remove photoresist and make required fine electrode, wherein etching technics need divide for four steps, with four kinds of etching liquids difference etching chromium, copper, chromium and ITO films.The manufacture method of above-mentioned three kinds of bus electrodes exists not enough: silk screen print method and photosensitive silver-colored slurry method all need the high-sintering process through about 450 ℃, remove organic solvent and bonding agent in the conductive silver paste, and make low-melting glass and silver powder fusion in the slurry, just can make silver firm attached on the substrate.The high-sintering process production cycle is long, cost is high.Photosensitive silver-colored slurry method is compared the precision height with stencil, but stock utilization is low, wastes bigger.Thin film photolithography method technology is complicated, and the production cycle is long, the cost of investment height.
Summary of the invention
Technical problem: the objective of the invention is to provide a kind of manufacture method that adopts the plasma display panel bus electrode of electroplating technology, make the making of plasma display panel bus electrode have higher efficient, lower cost, bus electrode has more performance.
Technical scheme: feature of the present invention is that the sidewall that is chosen in transparency conductive electrode is coated with bus electrode.The present invention includes following steps:
A, on the nesa coating that substrate surface covers, apply photoresists,
B, exposure: the mask with the band bargraphs is tiled in the surface of photoresists, uses ultraviolet light vertical irradiation mask and photoresists again, forms the photoresists that solidify and uncured photoresists;
C, development: with the substrate of the above processing of developer solution spray, remove uncured photoresists,
D, etching: with the substrate that the etching liquid spray developed, that part of nesa coating that does not cover the photoresists that solidify is etched and removes, and stays the transparency conductive electrode of required bargraphs; Forming above one is the photoresists of the curing of required figure, and the centre is the transparency conductive electrode of required figure, is the plating piece of substrate below,
E, plating: use electro-plating method, at transparency conductive electrode both sides electroplating busbar electrode,
F, remove photoresist: will plate good plating piece and put into the liquid that removes photoresist, soak several minutes, the photoresists of the curing on removal transparency conductive electrode surface have then been finished the making of bus electrode.
Wherein the thickness of bus electrode is 0.01～5 micron.Bus electrode is a silver or electric conductivity single-layer metal preferably, also can be multiple layer metal.Can also increase and soak smithcraft before the electroplating busbar electrode, form one deck displacement metal level as thin as a wafer on the transparency conductive electrode surface, making has good adhesion between bus electrode and the transparency conductive electrode; Or before the electroplating busbar electrode, on transparency conductive electrode, plating layer of metal with the method for chemical plating, its electrode potential is defeated by the metal as bus electrode, thereby increases the adhesion of bus electrode and transparency conductive electrode.
Beneficial effect: the present invention has the following advantages:
(1) transparency conductive electrode does not have the covering of opaque electrode on plasma display panel direct-view direction, and the aperture opening ratio of display unit is nearly 100%, and this can't accomplish with conventional method.
(2) bus electrode that obtains of galvanoplastic does not need the subsequent technique in the conventional method to handle, and just can satisfy the requirement of plasma display panel.Subsequent technique in the conventional method has photoetching (comprising exposure, development, etching), high temperature sintering, if not comprising equipment debugging and technological parameter gropes, the time of 0.5 day/sheet of these arts demands, therefore simple, the required process time of process of the present invention is short.
(3) the used electroplate liquid of electroplating busbar electrode, to soak the plating bath that smithcraft solutions employed and chemical plating use all reusable, and in whole electroplating technology, do not have the waste of material.And the waste that in conventional method, inevitably will bring material, the slurry that adheres on silk screen after the printing as silk screen print method can not reuse; Photosensitive silver-colored slurry method not only has identical problem with silk screen print method, and follow-up etching technics will be wasted on the substrate about 50% slurry; The thin film photolithography method is at the material that also will waste behind the etching technics about 50%.Therefore stock utilization of the present invention is very high.
(4) the required equipment of electroplating technology has electroplating power supply, electroplating bath, some leads and anchor clamps, and these equipment prices are low, and it is little to take up room.And the high accuracy screen printer that needs in the conventional method, kiln formula sintering furnace, vacuum coating equipment, high accuracy exposure machine and development/etching apparatus, equipment is huge, cost an arm and a leg, and needs other ultra-clean operational environment of a specific order.Therefore equipment required for the present invention is simple, to the small investment of factory building, operational environment and equipment.
In sum, the present invention adopts electroplating technology to make the plasma display panel bus electrode, and the coating performance of acquisition is good, and process cycle is short, and cost of investment is low, and process is simple, is a kind of high efficiency process.
Description of drawings
Fig. 1 is the schematic diagram of the manufacturing process of transparency conductive electrode.Fig. 1 a applies photoresists, and Fig. 1 b is exposure, and Fig. 1 c develops, and Fig. 1 d is an etching.
The schematic diagram of Fig. 2 for electroplating.
Fig. 3 is the schematic diagram of plating prebasal plate with the comparison of plating metacoxal plate.
Fig. 4 is the schematic diagram of the transparency conductive electrode of plating multiple layer metal.
Have among the above figure; Substrate 1, nesa coating 2, photoresists 3, mask 4, ultraviolet light 5, the photoresists 6 that solidify, uncured photoresists 7, developer solution 8, etching liquid 9, transparency conductive electrode 10, plating piece 11, anode 12, plating bath 13, electroplating bath 14, power supply 15, bus electrode 16.
Embodiment
The specific embodiment of the present invention is as follows:
Cleaning base plate, substrate comprise the nesa coating 2 of substrate glass substrate 1 and its surface coverage.
At the surface heat pressure sensitivity optical cement 3 of nesa coating 2, glued membrane should be smooth, no bubble.
Exposure: be tiled in the surface of photoresists 3 with the mask 4 of being with bargraphs, compress, make photoresists 3 and mask plate 4 seamless.Use ultraviolet light 5 vertical irradiation mask 4 and photoresists 3 again, ultraviolet light 5 can penetrate the transparent region on the mask 4 and shine the corresponding site of photoresists 3, and this part photoresists is solidified, and forms the photoresists 6 that solidify; Zone of opacity on the mask plate 4 can block ultraviolet 5 irradiation and make the corresponding site of photoresists 3 that any variation not take place, form uncured photoresists 7.
Develop: the substrate after will exposing is inserted developing room, and the sodium carbonate developer solution 8 spray substrates with 0.8～1.0% are removed uncured photoresists 7.
Etching: the substrate that will develop and clean is inserted etching chamber, the hydrochloric acid etching liquid 9 spray substrates with 50%, and that part of nesa coating that does not cover photoresists 6 is etched and removes, and stays the transparency conductive electrode 10 of required bargraphs.
The substrate that etching is crossed considers that making substrate will have good the connection with external circuit, before plating, spends glue and removes the part photoresists 6 at transparency conductive electrode 10 two ends and expose this partially transparent conductive electrode.Forming above one is the photoresists 6 of the curing of required figure, and the centre is the transparency conductive electrode 10 of required figure, is the plating piece 11 of substrate 1 below,
Cleaning base plate is removed the residual plating bath on the substrate.Because the silver that plating just is good and the adhesion of substrate transparency conductive electrode 10 are relatively poor, so can only embathe in water.
The moisture in the silver layer is removed in oven dry.
Substrate inserted in the liquid that removes photoresist soak, remove photoresists 6.
Cleaning base plate.
In above implementation process, before electroplating busbar electrode 16, smithcraft is soaked in use, as plating pre-treatment with methods such as soaking silver, chemical silvering, form one deck displacement metal level as thin as a wafer on transparency conductive electrode 10 surfaces, making between bus electrode 16 and the transparency conductive electrode 10 has good adhesion; Or on transparency conductive electrode 10, plate layer of metal earlier with the method for chemical plating, and its electrode potential is defeated by the metal as bus electrode, the re-plating bus electrode, thus increase the adhesion of bus electrode 16 and transparency conductive electrode 10.
Coating substrate of the present invention is a transparency conductive electrode, and electroplating reaction is between the emergence period, and it is more a lot of greatly than the resistance of plating bath, and this makes the distribution of coating very inhomogeneous.The present invention dilutes plating bath in the above-described embodiment, and the resistance of plating bath and the resistance of transparency conductive electrode are more or less the same, and the coating of Dian Duing not only is evenly distributed like this, and crystallization is careful.
Outside the desilver, metals such as aluminium, copper also are good conductors, can make bus electrode.So can be equipped with corresponding electroplate liquid and anode metal plate at metals such as aluminium, copper in the above-described embodiment, make bus electrode with the plating method.
Electroplate layer of metal and make bus electrode, often can not satisfy the requirement of conductivity and adhesion simultaneously, therefore will plate layer of metal in the above-described embodiment and change into and plate multiple layer metal and make bus electrode, bus electrode 16 is silver or electric conductivity single or multiple lift metals preferably.Bottom is to combine preferred metal with transparency conductive electrode 10, and covering on the bottom is to conduct electricity very well and the metal good with the bottom adhesion.So both can guarantee the good combination of bus electrode and transparency conductive electrode 10, the bus electrode of the low-resistance value of having got back.
In the above-described embodiment, electroplating the supply voltage that uses can be direct voltage, pulse voltage, periodic reverse voltage etc., and the combination of their waveforms, can make coating fine and close more like this.
Claims (3)
1. the manufacture method of a plasma display panel bus electrode is characterized in that the method for making is:
A, go up at the nesa coating (2) of substrate (1) surface coverage and to apply photoresists (3),
B, exposure: the mask (4) with the band bargraphs is tiled in the surface of photoresists (3), uses ultraviolet light (5) vertical irradiation mask (4) and photoresists (3) again, forms the photoresists (6) of curing and uncured photoresists (7);
C, development: with the substrate of the above processing of developer solution (8) spray, remove uncured photoresists (7),
D, etching: with the substrate that etching liquid (9) spray developed, that part of nesa coating that does not cover the photoresists (6) that solidify is etched and removes, and stays the transparency conductive electrode (10) of required bargraphs; Forming above one is the photoresists (6) of the curing of required figure, and the centre is the transparency conductive electrode (10) of required figure, is the plating piece (11) of substrate (1) below,
E, plating: use electro-plating method, at transparency conductive electrode (10) both sides electroplating busbar electrodes (16),
F, remove photoresist: will plate good plating piece and put into the liquid that removes photoresist, soak several minutes, and remove the photoresists (6) of the surperficial curing of transparency conductive electrode (10), and then finish the making of bus electrode.
2. the manufacture method of plasma display panel bus electrode according to claim 1, the thickness that it is characterized in that bus electrode (16) is 0.01～5 micron.
3. the manufacture method of plasma display panel bus electrode according to claim 1 and 2 is characterized in that bus electrode (16) is a silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100417745A CN100362613C (en) | 2004-08-24 | 2004-08-24 | Method of manufacturing bus electrode of plasma display board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100417745A CN100362613C (en) | 2004-08-24 | 2004-08-24 | Method of manufacturing bus electrode of plasma display board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1599001A CN1599001A (en) | 2005-03-23 |
| CN100362613C true CN100362613C (en) | 2008-01-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100417745A Expired - Fee Related CN100362613C (en) | 2004-08-24 | 2004-08-24 | Method of manufacturing bus electrode of plasma display board |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794430A (en) * | 2011-12-31 | 2014-05-14 | 四川虹欧显示器件有限公司 | Plasma display screen electrode and making method thereof, and plasma display screen |
| CN104319211A (en) * | 2014-10-10 | 2015-01-28 | 北川天讯新材料有限公司 | Electrode plate manufacturing method |
| CN106783120B (en) * | 2016-12-13 | 2018-03-27 | 深圳顺络电子股份有限公司 | The preparation method and electronic component of a kind of electrodes of electronic components |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1167420A (en) * | 1996-04-25 | 1997-12-10 | Lg电子株式会社 | Electrode for plasma display board and making method thereof |
| US20010026127A1 (en) * | 1998-02-27 | 2001-10-04 | Kiyoshi Yoneda | Color display apparatus having electroluminescence elements |
| CN1340205A (en) * | 1999-10-19 | 2002-03-13 | 松下电器产业株式会社 | Method of manufacturing metal electrode |
| WO2003019600A1 (en) * | 2001-08-31 | 2003-03-06 | Sony Corporation | Plasma display unit |
| JP2004190037A (en) * | 2004-01-21 | 2004-07-08 | Taiyo Ink Mfg Ltd | Photocurable resin composition |
-
2004
- 2004-08-24 CN CNB2004100417745A patent/CN100362613C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1167420A (en) * | 1996-04-25 | 1997-12-10 | Lg电子株式会社 | Electrode for plasma display board and making method thereof |
| US20010026127A1 (en) * | 1998-02-27 | 2001-10-04 | Kiyoshi Yoneda | Color display apparatus having electroluminescence elements |
| CN1340205A (en) * | 1999-10-19 | 2002-03-13 | 松下电器产业株式会社 | Method of manufacturing metal electrode |
| WO2003019600A1 (en) * | 2001-08-31 | 2003-03-06 | Sony Corporation | Plasma display unit |
| JP2004190037A (en) * | 2004-01-21 | 2004-07-08 | Taiyo Ink Mfg Ltd | Photocurable resin composition |
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| CN1599001A (en) | 2005-03-23 |
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Granted publication date: 20080116 Termination date: 20120824 |