CN100360982C - Microelectromechanical optical display subass embly - Google Patents
Microelectromechanical optical display subass embly Download PDFInfo
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- CN100360982C CN100360982C CNB2005100044123A CN200510004412A CN100360982C CN 100360982 C CN100360982 C CN 100360982C CN B2005100044123 A CNB2005100044123 A CN B2005100044123A CN 200510004412 A CN200510004412 A CN 200510004412A CN 100360982 C CN100360982 C CN 100360982C
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- optical display
- microelectromechanicoptical
- reflection horizon
- outer support
- display subass
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Abstract
The present invention relates to a micro-electromechanical optical display assembly which comprises a transparent substrate with a plurality of transparent wires, a dielectric layer, a plurality of reflecting layers and a plurality of external support columns. Each of the external support columns has a first end and a second end; the first end is connected with the dielectric layer; the second end is connected with the reflecting layer, wherein the reflecting layer completely covers the second end.
Description
Technical field
The invention relates to the supporting construction improvement of a kind of microelectromechanicoptical optical display subass embly, particularly a kind of microelectromechanicoptical optical display subass embly.
Background technology
United States Patent (USP) announces the 6th, 574, No. 033 and 6,794, disclose a kind of novel microelectromechanicoptical optical display subass embly (Microelectromechanical optical systems, MEMO system) for No. 119 respectively, it sees through the reflection configuration that suspends, cooperate principle of interference, reach the purpose that image shows.
Figure 1A is the synoptic diagram of traditional microelectromechanicoptical optical display subass embly, Figure 1B is the sectional view of a-a section among Figure 1A, shown in Figure 1A and Figure 1B, glass substrate 12 surfaces of tradition microelectromechanicoptical optical display subass embly 10 have many transparent leads that uniformly-spaced are provided with 13 and the dielectric layer 14 that covers transparent lead 13, many reflection horizon 18 are arranged at respectively on many outer support columns 16 and the interior support column 17, and with the dielectric layer 14 both determining deviation g of being separated by.Wherein, each reflection horizon 18 and transparent lead 13 are mutually orthogonal, and each transparent lead 13 promptly forms pixel cell 11a and 11b with the zone that reflection horizon 18 interlocks.Outer support column 16 is arranged between each pixel cell, between 11a and 11b, stride across interval between pixel cell with supporting reflex layer 18, in each pixel cell 11a, 11b, then be provided with vary in size, interior support column 17 that quantity is different, can make the unsettled reflection horizon 18 of central authorities obtain suitable support.
Secondly, outer support column 16 and interior support column 17 can be made of macromolecular material, the top of support column 16 and interior support column 17 respectively has the top 162,172 of horizontal expansion outside, the tack strength in support column 17 and 16 pairs of reflection horizon 18 of outer support column in can increasing, and can share the stress that is produced when partially reflecting layer 18 is out of shape.
Shown in Figure 1B, when having multi-wavelength λ 1, λ 2 ..., the incident light of λ n passes glass substrate 12 and by reflection horizon 18 reflex times, the light of one specific wavelength λ 1 can reflect away because of the enhancing of constructive interference, all the other wavelength X 2 ..., the light of λ n is then cancelled out each other because of destruction interference, wherein, the wavelength that produces constructive interference is determined by the spacing g of dielectric layer 14 with reflection horizon 18.When dielectric layer 14 and reflection horizon 18 are subjected to impressed current to do the time spent, reflection horizon 18 is attached together with dielectric layer 14, reflectivity is descended, and then make display module be dark attitude.Thus, traditional microelectromechanicoptical optical display subass embly 10 just can reach the purpose of imaging by the control impressed current.
Fig. 2 be among Figure 1A the b-b section in manufacture craft, sectional view before sacrifice layer 15 removes, please cooperate referring to Figure 1A and Fig. 2, tradition microelectromechanicoptical optical display subass embly 10 is to form the plug hole 152 vertical with dielectric layer 14 in the specific location of sacrifice layer 15, and in plug hole 152, fill photoresistance or other macromolecular material, behind high-temperature baking, form outer support column 16 and interior support column 17.
Yet; because outer support column 16 tops of traditional microelectromechanicoptical optical display subass embly 10 are without any protective seam; therefore; directly expose outside outer support column 16 to the open air very easily when carrying out reflection horizon 18 or sacrifice layer 15 etchings; corroded by acid, alkali, solvent or etching gas; make that the top or the top 162 of outer support column 16 are impaired, cause the fiduciary level of traditional microelectromechanicoptical optical display subass embly to descend.
Summary of the invention
In view of this, purpose of the present invention just is to provide a kind of supporting construction improvement of microelectromechanicoptical optical display subass embly, avoids the outer support column of microelectromechanicoptical optical display subass embly impaired in manufacture craft, to promote the fiduciary level of microelectromechanicoptical optical display subass embly.
The invention provides a kind of microelectromechanicoptical optical display subass embly, comprise a transparent lead, a dielectric layer, a reflection horizon and many outer support columns, its China and foreign countries' support column is arranged at intervals between dielectric layer and the reflection horizon, make the reflection horizon with one both determining deviation suspend and to be arranged at the side of outer support column with respect to dielectric layer, and the reflection horizon covers fully and an end of outer support column.
In a preferred embodiment, the outer support column of above-mentioned microelectromechanicoptical optical display subass embly has a horizontally extending top at an end that contacts with the reflection horizon, and the edge in top and reflection horizon is at a distance of one first gap, at least at a distance of one second gap, above-mentioned first gap and second gap are respectively between 0.3 μ m to 1 μ m at the edge of outer support column and transparent lead.
Secondly, the both determining deviations between dielectric layer and reflection horizon are between 1000 to 8000 .Microelectromechanicoptical optical display subass embly can more comprise many interior support columns, is positioned at the central part that transparent lead and reflection horizon overlap.Again, interior support column and outer support column can be made of photoresist, and transparent lead can be made of indium tin oxide target or chromium, and dielectric layer is made of SiOx or SiNx, and the reflection horizon can be made of silver, aluminium, rubidium aluminium, nickel or chromium.
The present invention provides a kind of microelectromechanicoptical optical display subass embly in addition, comprises the transparency carrier with how transparent lead, the dielectric layer that covers transparent lead, multi-reflection layer and many outer support columns.Wherein many outer support columns have one first end and one second end respectively, and first end is connected with dielectric layer, and second end is connected with the reflection horizon, and wherein the reflection horizon covers second end fully.
In a preferred embodiment, the transparent lead and the reflection horizon of above-mentioned microelectromechanicoptical optical display subass embly respectively are strip, and mutually orthogonal, and outer support column is arranged in the zone of transparent lead and reflection horizon crossover.Second end of outer support column has a horizontally extending top, wherein the edge in top and reflection horizon is at a distance of one first gap, the edge of outer support column and transparent lead is at least at a distance of one second gap, and above-mentioned first gap and second gap are respectively between 0.3 μ m to 1 μ m.
Secondly, the both determining deviations between dielectric layer and reflection horizon are between 1000 to 8000 .Microelectromechanicoptical optical display subass embly can more comprise many interior support columns, is positioned at pixel cell.In addition, interior support column and outer support column can be made of photoresist, and transparent lead can be made of indium tin oxide target or chromium, and dielectric layer can be made of SiOx or SiNx, and the reflection horizon can be made of silver, aluminium, rubidium aluminium, nickel or chromium.
For above-mentioned and other purpose of the present invention, feature and advantage can be become apparent, concrete preferred embodiment cited below particularly, and conjunction with figs. elaborates.
Description of drawings
Figure 1A is the synoptic diagram of traditional microelectromechanicoptical optical display subass embly;
Figure 1B is the sectional view of a-a section among Figure 1A;
Fig. 2 is that the b-b section is in manufacture craft among Figure 1A, and sacrifice layer removes preceding sectional view;
Fig. 3 is the synoptic diagram of microelectromechanicoptical optical display subass embly of the present invention;
Fig. 4 A～Fig. 4 D is the manufacture craft synoptic diagram of microelectromechanicoptical optical display subass embly of the present invention section c-c in Fig. 3; And
Fig. 5 is the sectional view of d-d section among Fig. 3.
Symbol description
10 microelectromechanicoptical optical display subass emblies
12 glass substrates
13 transparent leads
14 dielectric layers
15 sacrifice layers
152 plug holes
16 outer support columns
162 172 tops
Support column in 17
18 reflection horizon
30 microelectromechanicoptical optical display subass emblies
31a 31b pixel cell
32 glass substrates
33 transparent leads
34 dielectric layers
35 sacrifice layers
352 plug holes
The outer support column of 36 36a 36b
362 372 tops
First end of 364 outer support columns
Second end of 368 outer support columns
Support column in 37
38 reflection horizon
D1 first gap
D2 second gap
Both determining deviations of g reflection horizon and dielectric layer
Embodiment
Fig. 3 is the synoptic diagram of microelectromechanicoptical optical display subass embly of the present invention.The glass substrate 32 of microelectromechanicoptical optical display subass embly 30 is provided with the transparent lead 33 and the covering dielectric layer 34 thereon at heterogeneous mutual interval, support columns 37 and outer support column 36 are arranged between dielectric layer 34 and the reflection horizon 38 in many, make reflection horizon 38 and dielectric layer 34 a both determining deviation apart.
In the present embodiment; above-mentioned first gap d 1 and second gap d 2 are respectively between 0.3 μ m to 1 μ m; therefore; in the manufacture craft process of assembly; reflection horizon 38 can be used as the protective seam of outer support column 36; avoid outer support column 36 to be subjected to acid, alkali, solvent or etching gas corrodes, cause the impaired or reflection horizon 38 of the physical strength of outer support column 36 to peel off.
Secondly, outer support column 36 also can 38 long axis direction extends along the reflection horizon by the border of each pixel cell, protrude outside the scope of pixel cell, as the outer support column 36a among Fig. 3, or the outer support column of adjacent pixel unit links to each other, form as the outer support column 36b among Fig. 3, so reflection horizon 38 can obtain more firm support.
In addition, then be provided with a plurality of interior support columns 37 in each pixel cell, can make the unsettled reflection horizon 38 of central authorities obtain suitable support.It should be noted, in the embodiments of figure 3, inside and outside support column 37,36 is only arranged expression in the square barrier mode of 4x4, but quantity, position, the shape of inside and outside support column 37,36, can do suitable adjustment with the spacing in reflection horizon 38 and the physical strength in reflection horizon 38 according to size, the dielectric layer 34 of pixel, with the needs of realistic design.
The 4A～4D figure is microelectromechanicoptical optical display subass embly of the present invention manufacture craft synoptic diagram along section c-c in Fig. 3.At first, please cooperate, form a transparent indium tin oxide target or chromium thin film on a glass substrate 32 surface as conductive layer, and etching form the transparent lead 33 with proper width with reference to figure 3 and Fig. 4 A.Then, form the dielectric layer 34 and a sacrifice layer 35 of the transparent lead 33 of a covering in regular turn at above-mentioned transparent lead 33 surperficial sputters, wherein, dielectric layer 34 can be made of SiOx or SiNx, the thickness g of sacrifice layer 35 decides according to the wavelength that will reflect, for example between 1000 to 8000 , and its material can be molybdenum, tantalum, silicon or germanium one of them.Then, utilize gold-tinted and the etching process ad-hoc location in sacrifice layer 35 to form a plurality of plug holes 352, as the usefulness of follow-up formation support column.
Next, shown in Fig. 4 B, be coated on the sacrifice layer 35 after the above-mentioned etching earlier, form the photoresist layer of a set thickness with eurymeric photoresistance, minus photoresistance or other macromolecular material.Then, utilize gold-tinted manufacture craft definition to need the support column zone that keeps, wherein, when the inside and outside support column of definition 37,36, the top of support column 37 and outer support column 36 need keep the partly photoresistance of horizontal expansion in each, to form the top 362,372 of horizontal expansion.
Shown in Fig. 4 C, when the photoresistance that forms inside and outside support column 37,36 and after hardening through high-temperature baking, at sacrifice layer 35 and inside and outside support column 37,36 surface deposition has the metallic reflector 38 of good mechanical properties and high reflectance, as: silver, aluminium, rubidium aluminium, nickel or chromium etc., and with gold-tinted, suitable reflection horizon 38 figures of etching process definition.Wherein, reflection horizon 38 covers inside and outside support column 37,36 fully; and the outer rim at the top 362 of outer support column 36 and the edge in reflection horizon 38 keep one first gap d 1 at least; first gap d 1 can be between 0.3 μ m to 1 μ m; therefore, in the manufacture craft process of assembly, reflection horizon 38 can be used as the protective seam of outer support column 36; avoid outer support column 36 to be subjected to acid, alkali, solvent or etching gas corrodes, cause outer support column 36 impaired.
At last, shown in Fig. 4 D, carry out dry ecthing with XeFe2, remove the sacrifice layer 35 among Fig. 4 C, make reflection horizon 38 with both determining deviation g, suspend and be arranged at the side of inside and outside support column 37,36, can finish the required micro suspension structure of microelectromechanicoptical optical display subass embly of the present invention 30 with respect to dielectric layer 34.
See also Fig. 5 again, show microelectromechanicoptical optical display subass embly of the present invention sectional view along section d-d in Fig. 3.After the manufacture craft of finishing microelectromechanicoptical optical display subass embly of the present invention, outer support column 36 is connected with dielectric layer 34 with first end 364, be connected with reflection horizon 38 with second end 368, reflection horizon 38 is the top 362 that covers second end 368 of outer support column 36 fully, and the edge of the outer rim at top 362 and transparent lead 33 keeps one second gap d, 2, the second gap d 2 between 0.3 μ m to 1 μ m at least.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any insider, without departing from the spirit and scope of the present invention; still can do a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (10)
1. microelectromechanicoptical optical display subass embly comprises:
One substrate;
Many transparent leads are arranged on this substrate;
One dielectric layer is arranged on this transparent lead;
Multi-reflection layer, with this dielectric layer quadrature and with one both determining deviation be arranged at the top of this dielectric layer, wherein should how transparent lead and the overlapping of this multi-reflection layer partly be to define many pixel cells; And
Many outer support columns are arranged between this dielectric layer and this reflection horizon and the border of contiguous this pixel cell, and wherein this reflection horizon covers the end that these outer support columns contact with the reflection horizon fully,
Wherein the edge in these outer support columns and this reflection horizon is at a distance of one first gap, and this first gap is between 0.3 μ m and 1 μ m.
2. microelectromechanicoptical optical display subass embly as claimed in claim 1, wherein these outer support columns have a horizontally extending top at an end that contacts with this reflection horizon, and the edge in these tops and this reflection horizon is at a distance of between 0.3 μ m and 1 μ m.
3. microelectromechanicoptical optical display subass embly as claimed in claim 1, wherein the edge of these outer support columns and this transparent lead is at a distance of one second gap, and this second gap is between 0.3 μ m and 1 μ m.
4. microelectromechanicoptical optical display subass embly as claimed in claim 1, wherein this both determining deviation between 1000 and 8000 .
5. microelectromechanicoptical optical display subass embly as claimed in claim 1, it more comprises many interior support columns, is arranged in this pixel cell.
6. microelectromechanicoptical optical display subass embly as claimed in claim 5, wherein support column and these outer support columns comprise photoresist in these.
7. microelectromechanicoptical optical display subass embly as claimed in claim 1, wherein this transparent lead comprises indium tin oxide target or chromium.
8. microelectromechanicoptical optical display subass embly as claimed in claim 1, wherein this reflection horizon comprises silver, aluminium, rubidium aluminium, nickel or chromium.
9. microelectromechanicoptical optical display subass embly as claimed in claim 1 wherein should be connected with these reflection horizon by many outer support columns.
10. microelectromechanicoptical optical display subass embly as claimed in claim 1, wherein how outer support columns part is between two adjacent above-mentioned pixel cells.
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| CNB2005100044123A CN100360982C (en) | 2005-01-13 | 2005-01-13 | Microelectromechanical optical display subass embly |
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| CNB2005100044123A CN100360982C (en) | 2005-01-13 | 2005-01-13 | Microelectromechanical optical display subass embly |
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| CN100360982C true CN100360982C (en) | 2008-01-09 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101604092B (en) * | 2008-06-11 | 2012-02-15 | 季中 | Display panel, manufacture method thereof as well as display device, color restoration method thereof and electronic device |
| CN106527042B (en) * | 2017-01-06 | 2019-12-03 | 京东方科技集团股份有限公司 | A kind of mask plate and preparation method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5835255A (en) * | 1986-04-23 | 1998-11-10 | Etalon, Inc. | Visible spectrum modulator arrays |
| JPH11211999A (en) * | 1998-01-28 | 1999-08-06 | Teijin Ltd | Optical modulating element and display device |
| US6195196B1 (en) * | 1998-03-13 | 2001-02-27 | Fuji Photo Film Co., Ltd. | Array-type exposing device and flat type display incorporating light modulator and driving method thereof |
| JP2002287047A (en) * | 2001-03-23 | 2002-10-03 | Seiko Epson Corp | Optical switching element, optical switching device, methods for manufacturing them and picture display device |
| US6574033B1 (en) * | 2002-02-27 | 2003-06-03 | Iridigm Display Corporation | Microelectromechanical systems device and method for fabricating same |
| WO2004006003A1 (en) * | 2002-07-02 | 2004-01-15 | Iridigm Display Corporation | A device having a light-absorbing mask a method for fabricating same |
| CN1517746A (en) * | 2003-01-13 | 2004-08-04 | 元太科技工业股份有限公司 | Light interference type colour display panel and light interference regulating element |
| US6794119B2 (en) * | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
| CN1549039A (en) * | 2003-05-20 | 2004-11-24 | 元太科技工业股份有限公司 | Method for producing light interference display unit |
-
2005
- 2005-01-13 CN CNB2005100044123A patent/CN100360982C/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5835255A (en) * | 1986-04-23 | 1998-11-10 | Etalon, Inc. | Visible spectrum modulator arrays |
| JPH11211999A (en) * | 1998-01-28 | 1999-08-06 | Teijin Ltd | Optical modulating element and display device |
| US6195196B1 (en) * | 1998-03-13 | 2001-02-27 | Fuji Photo Film Co., Ltd. | Array-type exposing device and flat type display incorporating light modulator and driving method thereof |
| JP2002287047A (en) * | 2001-03-23 | 2002-10-03 | Seiko Epson Corp | Optical switching element, optical switching device, methods for manufacturing them and picture display device |
| US6794119B2 (en) * | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
| US6574033B1 (en) * | 2002-02-27 | 2003-06-03 | Iridigm Display Corporation | Microelectromechanical systems device and method for fabricating same |
| WO2004006003A1 (en) * | 2002-07-02 | 2004-01-15 | Iridigm Display Corporation | A device having a light-absorbing mask a method for fabricating same |
| CN1517746A (en) * | 2003-01-13 | 2004-08-04 | 元太科技工业股份有限公司 | Light interference type colour display panel and light interference regulating element |
| CN1549039A (en) * | 2003-05-20 | 2004-11-24 | 元太科技工业股份有限公司 | Method for producing light interference display unit |
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| CN1658007A (en) | 2005-08-24 |
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Owner name: YOUDA PHOTOELECTRIC CO., LTD.; AMERICAN QUALCOMM Free format text: FORMER OWNER: YOUDA PHOTOELECTRIC CO., LTD. Effective date: 20080704 |
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Effective date of registration: 20080704 Address after: Taiwan, Hsinchu, China Co-patentee after: High pass micro Mechatronics Sys Technology Inc Patentee after: Au Optronics Co Address before: Hsinchu city of Taiwan Province Patentee before: AU Optronics Corporation |