CN100349332C - Optical diode based on two-dimensional photon crystal and preparation method - Google Patents
Optical diode based on two-dimensional photon crystal and preparation method Download PDFInfo
- Publication number
- CN100349332C CN100349332C CNB2005100029138A CN200510002913A CN100349332C CN 100349332 C CN100349332 C CN 100349332C CN B2005100029138 A CNB2005100029138 A CN B2005100029138A CN 200510002913 A CN200510002913 A CN 200510002913A CN 100349332 C CN100349332 C CN 100349332C
- Authority
- CN
- China
- Prior art keywords
- crystal
- photon crystal
- photon
- frequency
- optical diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention provides an optical diode based on a two-dimensional flat-film photon crystal and a preparation method thereof, which belongs to the technical field of optical diodes. The optical diode comprises a two-dimensional photon crystal and a crystal which can realize frequency conversion, wherein the two-dimensional photon crystal and the crystal which can realize frequency conversion are connected by waveguide, and the crystal which can realize frequency conversion can be a common non-linear double-frequency crystal and can also be another two-dimensional photon crystal. If incident laser is transmitted in the positive direction, the double-frequency effect of the incident laser occurs in the crystal which can realize frequency conversion. The generated double-frequency laser can enter the photon crystal through waveguide. If the incident laser is transmitted in the reverse direction, the incident laser firstly enters the photon crystal. Because of the effect of a photon band gap, the incident laser is totally reflected without passing through the photon crystal, and thereby, the unilateral conducted optical diode is realized. The present invention has the advantages of simple preparation, convenient use and measurement and easy integration.
Description
Technical field
The invention belongs to the optical diode technical field, be specifically related to a kind of optical diode based on 2 D photon crystal and preparation method thereof.
Background technology
Photonic crystal is similar to semi-conducting material and has the electron energy band, also has conduction band and forbidden band (photon band gap).Photonic crystal claims photonic bandgap material again, is the crystal of a kind of artificial design of being made of one or more dielectric materials, dielectric constant changes in space periodicity.The dielectric constant that space periodicity distributes has just formed photon band gap (forbidden band) to the modulating action of incident light wave, and wavelength (perhaps frequency) falls into light in the photon band gap and will all be reflected back and can not see through photonic crystal.Utilize the photon band gap of photonic crystal, can realize the transmission course of light is carried out effectively artificial control, thereby have application very widely at integrated photonic device and optical communication field.Optical diode based on photonic crystal is a kind of important integrated photonic device, in fields such as optical communication, photometry calculation and optical information processing very important application is arranged.Therefore, as far back as 1994, M.Scalora has just proposed a kind of thought of utilizing 1-D photon crystal to realize optical diode, propose multiple dielectric film material periodic arrangement is formed 1-D photon crystal, and make the dielectric constant of these dielectric film materials increase progressively 0.01 successively, just can realize control action (document 1 to the unidirectional conducting of light, M.Scalora, J.P.Dowling, C.M.Bowden, and M.J.Bloemer, " The Photonic Band Edge Optical Diode ", J.Appl.Phys.1994,76 (4): 2023-2026; Document 2, M.Scalora, and M.E.Crenshaw, " A BeamPropagation Method that Handles Reflections ", Opt.Commun.1994,108 (1): 191-196).Subsequently, M.D.Tocci proposes to utilize the semiconductor technology of mixing up to realize that the refractive index of multiple semiconductor film material differs 0.1 thought successively, and analog computation the control action (document 3 of this 1-D photon crystal optical diode to optical transmission, M.D.Tocci, M.J.Bloemer, M.Scalora, and J.P.Dowling, " Thin-FilmNonlinear Optical Diode ", Appl.Phys.Lett.1995,66 (18): 2324-2326).But it is very difficult realizing having identical dielectric property and other multilayer dielectric film of small refringence experimentally.Therefore, up to the present, research work to the photonic crystal optical diode still mainly concentrates on theoretical research aspect (document 4, A.Huttunen, P.Torma, " Band Structure for Nonlinear Photonic Crystals ", J.Appl.Phys., 2002,91 (7): 3988-3991; Document 5, B.S.Song, T.Asano, Y.Akahane, Y.Kanaka, and S.Noda, " Transmission and Reflection Characteristics of in-Plane HeteroPhotonic Crystals ", Appl.Phys.Lett., 2004,85 (20): 4591-4593).Recently, S.O.Konorov is according to the self phase modulation of photonic crystal fiber, utilize two sections photonic crystal fibers to realize all-optical diode (document 6, S.O.Konorov, D.A.S.Biryukov, I.Bugar, M.J.Bloemer, V.I.Beloglazov, N.B.Skibina, D.Chorvatjr.D.Chorvat, M.Scalora, and A.M.Zheltikov, " Experimental Demonstration of a Photonic-Crystal-Fiber OpticalDiode ", Appl.Phys.B, 2004,34 (4): 1417-1420; Document 7, D.A.S.Biryukov, A.B.Fedotov, S.O.Konorov, V.P.Mitrokhin, M.Scalora, and A.M.Zheltikov, " Photonic Crystal Fiber Optical Diode ", Laser Phys.2004,14 (5): 764-766).But there is very big defective in this method: the one, and very strict to the required precision of photonic crystal fiber parameter; The 2nd, the pulling process of photonic crystal fiber is easy-regulating not, is difficult to prepare the sample that meets the design parameter requirement; The 3rd, photonic crystal fiber that need longer size, its length in the magnitude of tens centimetres even rice, is difficult to integrated usually.This has just greatly limited the practical application of photonic crystal optical diode.
Summary of the invention
The shortcoming that the objective of the invention is to overcome optical diode preparation process complexity in the prior art, is difficult to regulate and control provides a kind of optical diode based on 2 D photon crystal, prepares simply, uses and measures conveniently, is easy to integrated.
Technology contents of the present invention: a kind of optical diode based on 2 D photon crystal, comprise a 2 D photon crystal and a non-linear frequency-doubling crystal, 2 D photon crystal is one to be etched with one deck dielectric film of periodic distribution airport, and 2 D photon crystal is connected by waveguide with non-linear frequency-doubling crystal.
Described non-linear frequency-doubling crystal be for can realizing the 2 D photon crystal of frequency inverted, and the described 2 D photon crystal that can realize frequency inverted is one to be etched with one deck dielectric film of periodic distribution airport.
When being positioned at visible light wave range, select lithium niobate (LiNbO for use for incident light
3), barium titanate (BaTiO
3), cerium doped barium titanate (Ce:BaTiO
3), strontium titanates (SrTiO
3) wait the material of the visible transparent dielectric film as photonic crystal; When incident light is positioned at infrared band, select for use GaAs (GaAs), gallium nitride (GaN), gallium aluminium arsenic (AlGaAs), silicon (Si) etc. to the dielectric film of infrared light material transparent as photonic crystal.
A kind of preparation method of the optical diode based on 2 D photon crystal, its step comprises:
On one deck dielectric film, etch the periodic distribution airport of two 2 D photon crystals respectively; The lattice constant in the periodicity hole of a photonic crystal is the effective refractive index of the wavelength ratio twice of incident light, and the radius in hole is 1/3 lattice constant; The lattice constant in the periodicity hole of another photonic crystal
Wherein, the be as the criterion exponent number of phase matched of m, λ is that fundamental light wave is long, n
1Be the refractive index of fundamental frequency light, n
2Be the refractive index of frequency doubled light, the radius in hole
The thickness of dielectric film can be 200-600nm.
Described periodicity airport can be square profile.
Technique effect of the present invention: semi-conducting material (the perhaps lithium niobate LiNbO that utilizes 2 D photon crystal
3) self second order nonlinear optical effect, make the light of forward (from left to right) transmission at first in the crystal of realizing frequency inverted, frequency-doubled effect take place, its frequency doubled light can pass through photonic crystal, and oppositely the light of (from right to left) transmission can not pass through 2 D photon crystal, is directly returned by the photonic crystal total reflection.Thus, realize control action, thereby the application of a kind of 2 D photon crystal as optical diode is provided the unidirectional conducting of transmission light.It has the following advantages:
1, by changing structural parameters such as lattice constant, microcavity radius, adopts micro-processing technology to prepare the two-dimension non linearity photonic crystal of different-waveband, can realize 2 D photon crystal optical diode from visible light to the optical communication wave band.
2, the response speed of photonic crystal frequency-doubled effect is in the fs magnitude.
3, photonic crystal of the present invention preparation is simple, uses and measures conveniently, is beneficial to very much integrated.
Description of drawings
Below in conjunction with accompanying drawing, the present invention is made detailed description.
Fig. 1 is a 2 D photon crystal schematic diagram of the present invention;
Fig. 2 is the device schematic diagram that optical diode of the present invention is used;
Fig. 3 is that the photonic crystal II in the embodiment of the invention 1 sees through spectral curve;
Fig. 4 is that the photonic crystal II in the embodiment of the invention 3 sees through spectral curve.
The drawing explanation:
The flat dielectric face film of 1-two dimension; Hole among the 2-photonic crystal I; The lattice constant of 3-photonic crystal I; The lattice of 4-photonic crystal II; Hole among the 5-photonic crystal II; The 6-waveguide; The 7-laser; The 8-convergent lens; The 9-convergent lens; The 10-collecting lens; The 11-monochromator; The 12-photomultiplier; The 13-oscilloscope; The 14-laser diode; The 15-lock-in amplifier; The 16-chopper; The 17-computer.
Embodiment
The optical diode that the present invention is based on 2 D photon crystal can realize that by a 2 D photon crystal and a crystal of frequency inverted forms, and 2 D photon crystal is connected by waveguide with the crystal of realizing frequency inverted.2 D photon crystal is made of a two-dimentional dielectric film, is etched with the airport that is periodic distribution on film, and the distance between the airport is determined by lattice constant; Dielectric film is a semi-conducting material, comprises GaAs, AlGaAs, Si; Perhaps lithium niobate LiNbO
3, thickness can obtain by thin film techniques such as semiconductor molecule beam epitaxy growing technology, pulsed laser deposition technology and chemical vapour deposition techniques between 200nm～600nm.The radius of airport is square period profile between 200nm～800nm, airport is to make by focused-ion-beam lithography or electron beam exposure and reactive ion beam etching technique; The crystal I that can realize frequency inverted can be another 2 D photon crystal, also can realize with common non-linear frequency-doubling crystal, comprises barium metaborate crystal (β-BaB
2O
4, be called for short BBO), potassium titanyl oxygenic phosphate(KTP) crystal (KTiOPO
4, be called for short KTP), potassium dihydrogen phosphate crystal (KH
2PO
4, be called for short KDP) etc., but require crystalline size in the mm magnitude.By changing the angle of crystal end-face, just can directly utilize phase-matching condition to realize frequency translation with respect to incident light.The parameter request that does not have other.
During laser beam forward (from left to right) transmission, at first enter the crystal I that realizes frequency inverted, incident laser satisfies accurate phase-matching condition in crystal I, because non-linear frequency-doubled effect, incident laser is transformed into its two double-frequency laser, and the wavelength of double-frequency laser is positioned at the conduction band of photonic crystal II, can pass through photonic crystal.During laser beam reverse (from right to left) transmission, at first enter photonic crystal II, and laser wavelength of incidence is arranged in the photon band gap of photonic crystal II, because the effect of photon band gap, incoming laser beam is returned by total reflection and can not be passed through photonic crystal.Realize the unidirectional optical diode effect of passing through thus, the light of forward transmitted can be passed through, and the light of reverse transfer can not pass through.
The present invention utilizes the second nonlinear optic frequency-doubled effect of the nonlinear semiconductor material or the lithium niobate self of 2 D photon crystal, and the photon band gap characteristic of 2 D photon crystal realizes optical diode.Non-linear frequency-doubled effect requires fundamental frequency light and frequency doubled light to satisfy phase-matching condition.And semi-conducting material does not have birefringent characteristic, can not utilize the birefringence of material to realize phase matched, but material can be made periodic structure, utilizes a reciprocal lattice vector of grid space to realize accurate phase matched.Lithium niobate is a birefringent material, utilizes accurate phase matched can realize the frequency-doubled effect of high conversion efficiency.The effect of photon band gap characteristic is that wavelength falls into the incident beam of photon band gap, will be returned by the photonic crystal total reflection.
Be made up of two 2 D photon crystals as optical diode, the frequency of incident beam is arranged in the forbidden band (photon band gap) of photonic crystal II, and incident beam can not pass through photonic crystal II.Photonic crystal I satisfies accurate phase-matching condition, occurrence frequency conversion when incident beam transmits in photonic crystal, incident beam converts its frequency doubled light (frequency of light beam become original half) to, and like this, the frequency multiplication light frequency is located in the conduction band of photonic crystal II.
Accurate phase-matching condition requires:
ω
1+ω
1＝ω
2 (2)
Wherein, ω
1Be the fundamental frequency optic angle frequency of incident, ω
2Be the angular frequency of two frequency doubled lights,
Be the wave vector of fundamental frequency light,
Be the wave vector of two frequency doubled lights,
A reciprocal lattice vector for photonic crystal I.Will produce frequency is ω
2=2 ω
1Frequency doubled light.The conversion efficiency of accurate phase matched:
η∝(x
(2)L/m)
2 (4)
X wherein
(2)Be second-order nonlinear polarizability, L is the length that incident beam passes the path of photonic crystal I, the be as the criterion exponent number of phase matched of m.Accurate phase-matching condition can be represented with figure below:
According to accurate phase-matching condition, the lattice constant of photonic crystal I is by following conditional decision:
a＝mλ/(2n
2-2n
1) (4)
Wherein, the be as the criterion exponent number of phase matched of m, λ is that fundamental light wave is long, n
1Be the refractive index of fundamental frequency light, n
2Refractive index for frequency doubled light.
Like this, during the laser beam forward transmitted, photonic crystal I satisfies accurate phase-matching condition, because frequency-doubled effect, incoming laser beam converts its two double-frequency laser to.And the frequency multiplication light wavelength is positioned at the conduction band of photonic crystal II, can pass through photonic crystal II.Therefore, the light of forward transmitted can pass through 2 D photon crystal.
During the reverse incident of laser beam, laser at first enters photonic crystal II, because of its wavelength is arranged in the photon band gap of photonic crystal II, so returned by total reflection and can not pass through photonic crystal, like this, has just realized the controlled function to the unidirectional conducting of optical transmission process.
The invention provides a kind of preparation method of the optical diode of being made up of two 2 D photon crystals, it is for etching the periodic distribution airport of two 2 D photon crystals respectively on one deck dielectric film.
The parameter of photonic crystal II mainly designs according to the incident light wavelength:
(1) to the requirement of material: when incident light is positioned at visible light wave range, be chosen in visible light wave range absorb very little, to the material of visible transparent, as lithium niobate (LiNbO
3), barium titanate (BaTiO
3), mix Cerium barium titanate (Ce:BaTiO
3), strontium titanates (SrTiO
3) etc.When incident light is positioned at infrared band, be chosen in infrared band absorb very little, to the infrared light material transparent, as GaAs (GaAs), gallium nitride (GaN), gallium aluminium arsenic (AlGaAs), silicon (Si) etc.
(2) lattice constant (distance between the Kong Yukong) of periodicity tetragonal airport: can calculate according to bragg's formula:
Wherein λ is the incident light wavelength,
Be effective refractive index, a is a lattice constant.The radius of airport
The data of more detailed lattice constant and pore radius can be passed through multiple scattering method or Finite Difference-Time Domain separating method, utilize computer Simulation to obtain.
(3) thickness of photonic crystal is got 200nm-600nm usually, guarantees basic mode TE
0Pattern can be transmitted in photonic crystal.
The parameter of photonic crystal I mainly designs according to incident light wavelength and accurate phase-matching condition:
(1) to the requirement of material: when incident light is positioned at visible light wave range, be chosen in visible light wave range absorb very little, to the material of visible transparent, as lithium niobate (LiNbO
3) etc.When incident light is positioned at infrared band, be chosen in infrared band absorb very little, to the infrared light material transparent, as GaAs (GaAs), gallium nitride (GaN), gallium aluminium arsenic (AlGaAs) etc.
(2) lattice constant (distance between the Kong Yukong) of periodicity tetragonal airport:
Wherein, the be as the criterion exponent number of phase matched of m, λ is that fundamental light wave is long, n
1Be the refractive index of fundamental frequency light, n
2Refractive index for frequency doubled light.The radius of microcavity among the photonic crystal I
(3) thickness of photonic crystal is got 200nm-600nm usually.The same basic mode TE that guarantees
0Pattern can be transmitted in photonic crystal.
With reference to figure 1, optical diode comprise one on silicon dioxide substrates epitaxially grown thickness be the GaAs dielectric film 1 of 300nm, on film 1, be etched with the airport 2 and the airport 5 of square period profile, form 2 D photon crystal I and 2 D photon crystal II respectively.The radius of airport 2 is 202nm, and the radius of airport 5 is 190nm, and periodically the lattice constant 3 in hole is 800nm, and periodically the lattice constant 4 in hole is 500nm, and described airport is to adopt conventional focused-ion-beam lithography technology preparation.Photonic crystal I satisfies the accurate phase matched requirement of single order of optical communication wavelength 1550nm.The photon band gap of photonic crystal II as shown in Figure 3, the wavelength of 1550nm is arranged in photon band gap.
Dielectric film 1 is the GaAs material film of commodity in useization as requested also.
Fig. 2 is the device schematic diagram that the optical diode in the embodiment of the invention is used.
Wherein laser 7 is that (U.S. Melles Griot company makes semiconductor laser, wavelength 1550nm, power output 15mW), the quasi-continuous lasing that sends by chopper 16 copped waves after, be coupled in the two dimensional surface thin film photonic crystal 1 by the mode of convergent lens 8 by the end face coupling, after the laser beam that sees through thin film photonic crystal 1 is assembled by convergent lens 9, inject the entrance slit of monochromator 11 through collecting lens 10, after the output signal of monochromator 11 is amplified through photomultiplier 12, the signal input part of input lock-in amplifier 15, the reference input of the signal input lock-in amplifier 15 that chopper 16 sends carries out the collection and the processing of data by computer 17 at last.
The laser beam forward is injected two-dimensional film photonic crystal, incident laser intensity 5KW/cm
2, the laser intensity that sees through from photonic crystal II is 12 μ W/cm
2Laser beam is oppositely injected two-dimensional film photonic crystal, incident laser intensity 5KW/cm
2, the laser intensity that sees through from photonic crystal I is 0.Realized surveying the unidirectional control action of passing through of optical transmission process.
Thus, realized of the application of two-dimensional film photonic crystal as optical communication band of light diode.
The present invention also provides another specific embodiment based on the optical diode of two-dimensional film photonic crystal, similar to the photonic crystal in the foregoing description, 2 D photon crystal is the photonic crystal of cycle lattice, difference is, the thickness that obtains by the pulsed laser deposition technology on the MgO substrate is the lithium niobate film of 300nm, 2 D photon crystal obtains by focused particle beam etching or electron beam lithography mode, the radius of 2 D photon crystal I airport is 102nm, lattice constant is 420nm, the airport radius of 2 D photon crystal II is 53nm, and lattice constant is 160nm.Photonic crystal I satisfies the accurate phase matched requirement of single order that wavelength is the laser beam of 630nm.The photon band gap of photonic crystal II as shown in Figure 4, the laser of wavelength 630nm is arranged in photon band gap.
Use the device similar to embodiment 1, difference is to adopt by (the U.S. spectrum company manufacturing of YAG laser, repetition rate 10Hz, pulse duration is 35ps) laser of the 630nm that sends of the OPA laser (OPA-714 of physics institute of the Chinese Academy of Sciences) of pumping, lock-in amplifier 15 changes oscilloscope 13 into, and chopper 16 changes laser diode 14 into.The pulse laser of the 630nm that laser sends is coupled in the two dimensional surface thin film photonic crystal 1 by the end face coupled modes through convergent lens 8, after the laser beam that sees through thin film photonic crystal 1 is assembled by convergent lens 9, inject the entrance slit of monochromator 11 through collecting lens 10, after the output signal of monochromator 11 is amplified through photomultiplier 12, input oscilloscope 13, at last carry out the collection and the processing of data by computer 17, the signal that laser diode 14 sends is as the synchronous triggering signal of test macro.The laser beam forward is injected two-dimensional film photonic crystal, incident laser intensity 15GW/cm
2, the laser intensity that sees through from photonic crystal II is 3KW/cm
2Laser beam is oppositely injected two-dimensional film photonic crystal, incident laser intensity 15GW/cm
2, the laser intensity that sees through from photonic crystal I is 0.Realized surveying the unidirectional control action of passing through of optical transmission process.
Claims (6)
1, a kind of optical diode based on 2 D photon crystal, comprise a 2 D photon crystal, 2 D photon crystal is one to be etched with one deck dielectric film of periodic distribution airport, it is characterized in that: also comprise a non-linear frequency-doubling crystal, described 2 D photon crystal is connected by waveguide with non-linear frequency-doubling crystal.
2, the optical diode based on 2 D photon crystal as claimed in claim 1, it is characterized in that: described non-linear frequency-doubling crystal be for can realizing the 2 D photon crystal of frequency inverted, and the described 2 D photon crystal that can realize frequency inverted is one to be etched with one deck dielectric film of periodic distribution airport.
3, the optical diode based on 2 D photon crystal as claimed in claim 1 or 2 is characterized in that: when being positioned at visible light wave range for incident light, select for use lithium niobate, barium titanate, cerium doped barium titanate or strontium titanates as dielectric film; When incident light is positioned at infrared band, select for use GaAs, gallium nitride, gallium aluminium arsenic or silicon as dielectric film.
4, a kind of preparation method of the optical diode based on 2 D photon crystal, its step comprises:
On one deck dielectric film, etch the periodic distribution airport of two 2 D photon crystals respectively; The lattice constant of the periodic distribution airport of a photonic crystal is the effective refractive index of the wavelength ratio twice of incident light, and the radius in hole is 1/3 lattice constant; The lattice constant of the periodic distribution airport of another photonic crystal
Wherein, the be as the criterion exponent number of phase matched of m, λ is that fundamental light wave is long, n
1Be the refractive index of fundamental frequency light, n
2Be the refractive index of frequency doubled light, the radius in hole
5, the preparation method of the optical diode based on 2 D photon crystal as claimed in claim 4, it is characterized in that: the thickness of dielectric film is 200nm-600nm.
6, as the preparation method of claim 4 or 5 described optical diodes based on 2 D photon crystal, it is characterized in that:
Described periodic distribution airport is a square profile.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100029138A CN100349332C (en) | 2005-01-26 | 2005-01-26 | Optical diode based on two-dimensional photon crystal and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100029138A CN100349332C (en) | 2005-01-26 | 2005-01-26 | Optical diode based on two-dimensional photon crystal and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1812211A CN1812211A (en) | 2006-08-02 |
| CN100349332C true CN100349332C (en) | 2007-11-14 |
Family
ID=36844949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100029138A Expired - Fee Related CN100349332C (en) | 2005-01-26 | 2005-01-26 | Optical diode based on two-dimensional photon crystal and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100349332C (en) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100524865C (en) * | 2007-06-13 | 2009-08-05 | 中国科学院半导体研究所 | Method for preparing GaN-based LED with photon crystal structure |
| KR100921466B1 (en) * | 2007-08-30 | 2009-10-13 | 엘지전자 주식회사 | Nitride light emitting device and method of making the same |
| CN101718939B (en) * | 2009-11-03 | 2011-08-24 | 北京大学 | Photonic crystal micro-cavity structure and manufacturing method thereof |
| CN102169207B (en) * | 2011-05-26 | 2013-01-02 | 华中科技大学 | Periodically poleddomain reverse lithium niobate optical waveguide |
| CN105022116B (en) * | 2015-07-24 | 2017-10-03 | 南昌航空大学 | Photonic crystal waveguide side two-chamber all-optical diode structure |
| CN105204116B (en) * | 2015-10-14 | 2018-08-24 | 西安电子科技大学 | A kind of 2 D photon crystal of linear gradient structure |
| CN108922949B (en) * | 2018-05-31 | 2020-12-18 | 华灿光电（浙江）有限公司 | Light emitting diode, light emitting diode chip and manufacturing method thereof |
| CN110165551A (en) * | 2019-06-03 | 2019-08-23 | 陕西科技大学 | A kind of DBR low-index layer lithographic method reducing DBR periodicity |
| CN110262045B (en) * | 2019-06-18 | 2020-10-02 | 天津大学 | Diffraction-free two-dimensional optical lattice period rapid and continuous adjusting method |
| CN114287089B (en) * | 2019-08-30 | 2024-04-05 | 国立大学法人京都大学 | Two-dimensional photonic crystal surface-emitting laser |
| CN112799259B (en) * | 2019-11-13 | 2022-03-25 | 北京大学 | Information conversion device and method between exciton valley polarization and photon topological state |
| CN111157491B (en) * | 2020-01-10 | 2021-09-14 | 燕山大学 | Array sensing structure with photonic crystal microcavity and optical waveguide laterally coupled |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5559825A (en) * | 1995-04-25 | 1996-09-24 | The United States Of America As Represented By The Secretary Of The Army | Photonic band edge optical diode |
| US20030185532A1 (en) * | 2002-03-29 | 2003-10-02 | Kazuhiko Hosomi | Optical functional device and fabrication process for the same |
| US6701048B2 (en) * | 2001-05-01 | 2004-03-02 | The Regents Of The University Of California | Unidirectional gyrotropic photonic crystal and applications for the same |
| US20040091224A1 (en) * | 2000-04-06 | 2004-05-13 | Baumberg Jeremy J. | Optical device |
| CN1515926A (en) * | 2003-01-07 | 2004-07-28 | 中国科学院物理研究所 | Two-dimensional photon crystal and its application as optical switch |
-
2005
- 2005-01-26 CN CNB2005100029138A patent/CN100349332C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5559825A (en) * | 1995-04-25 | 1996-09-24 | The United States Of America As Represented By The Secretary Of The Army | Photonic band edge optical diode |
| US20040091224A1 (en) * | 2000-04-06 | 2004-05-13 | Baumberg Jeremy J. | Optical device |
| US6701048B2 (en) * | 2001-05-01 | 2004-03-02 | The Regents Of The University Of California | Unidirectional gyrotropic photonic crystal and applications for the same |
| US20030185532A1 (en) * | 2002-03-29 | 2003-10-02 | Kazuhiko Hosomi | Optical functional device and fabrication process for the same |
| CN1515926A (en) * | 2003-01-07 | 2004-07-28 | 中国科学院物理研究所 | Two-dimensional photon crystal and its application as optical switch |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1812211A (en) | 2006-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100349332C (en) | Optical diode based on two-dimensional photon crystal and preparation method | |
| Chen et al. | Advances in lithium niobate photonics: development status and perspectives | |
| US7373059B2 (en) | Compact, single chip-based, entangled polarization-state photon sources and methods for generating photons in entangled polarization states | |
| Srinivasan et al. | Magneto-optical materials and designs for integrated TE-and TM-mode planar waveguide isolators: a review | |
| US5475526A (en) | Method using a monolithic crystalline material for producing radiation by quasi-phase-matching, diffusion bonded monolithic crystalline material for quasi-phase-matching, and method for fabricating same | |
| US7489436B1 (en) | Hybrid integrated source of polarization-entangled photons | |
| US6744552B2 (en) | Photonic signal frequency up and down-conversion using a photonic band gap structure | |
| Mann et al. | Ultrafast optical switching and power limiting in intersubband polaritonic metasurfaces | |
| Rao et al. | Second‐harmonic generation in integrated photonics on silicon | |
| Korkishko et al. | The SHG-response of different phases in proton exchanged lithium niobate waveguides | |
| CN101840025B (en) | Linear photon crystal device | |
| Abolghasem et al. | Monolithic photonics using second-order optical nonlinearities in multilayer-core Bragg reflection waveguides | |
| Blanc et al. | Phase‐matched frequency doubling in an aluminum nitride waveguide with a tunable laser source | |
| CN101692148B (en) | All-optical diode super-transmission device and manufacturing method thereof | |
| Radojevic et al. | Strong nonlinear optical response in epitaxial liftoff single-crystal LiNbO 3 films | |
| JPH09274114A (en) | Optical waveguide element | |
| US20100328760A1 (en) | Waveguide parametric device and method | |
| Schunemann et al. | Recent advances in all-epitaxial growth and properties of orientation-patterned gallium arsenide (OP-GaAs) | |
| Liu et al. | Widely tunable, monochromatic THz generation via Cherenkov-type difference frequency generation in an asymmetric waveguide | |
| CN113612108B (en) | Frequency converter based on chamfer nonlinear crystal ridge waveguide and preparation method thereof | |
| US20230084321A1 (en) | Nonlinear on-chip optical devices using alscn | |
| Kemlin | Parametric infrared generation: from crystals to devices | |
| Amoroso et al. | Second harmonic generation in coupled LiNbO 3 waveguides by reverse-proton exchange | |
| Moss | Enhanced self-phase modulation induced spectral broadening in silicon nitride nanowires with integrated graphene oxide 2D films | |
| Kuo et al. | Microstructured semiconductors for mid-infrared nonlinear optics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071114 Termination date: 20170126 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |