CN100345247C - Hydrogen induced uncoupled heteroepitaxial flexible substrate - Google Patents
Hydrogen induced uncoupled heteroepitaxial flexible substrate Download PDFInfo
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- CN100345247C CN100345247C CNB031553885A CN03155388A CN100345247C CN 100345247 C CN100345247 C CN 100345247C CN B031553885 A CNB031553885 A CN B031553885A CN 03155388 A CN03155388 A CN 03155388A CN 100345247 C CN100345247 C CN 100345247C
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- intermediate layer
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Abstract
The present invention relates to a hydrogen induced decoupling flexible substrate for heteroepitaxy, which comprises a mechanical supporting substrate, a decoupling intermediate layer and a top layer structure, wherein the mechanical supporting substrate can perform the function of mechanical supporting for the whole structure; the decoupling intermediate layer is formed by the injection of hydrogen ions or hydrogen gases, and can perform the function of decoupling for the whole structure; the thickness of a top layer structure is less than 1000 nm; the top layer structure and the mechanical supporting substrate can be used for supporting an epitaxial layer together, and the top layer structure and the intermediate layer can implement the function of decoupling for the whole structure together.
Description
Technical field
The invention belongs to technical field of semiconductors, be meant a kind of heteroepitaxy flexible substrate structure of Hydrogen induced uncoupled coupling especially.
Background technology
In nineteen nineties, the research of gallium nitride base blue light material has obtained development rapidly, and blue-light device has correspondingly also progressively been gone on the industrialization road.Sapphire Substrate is generally adopted in the research and development of gallium nitride base blue light material and device.But it is all also not fully up to expectations on quality, size and price.And, the Japanese to sapphire growth gallium nitride art applications patent protection.Therefore seeking high-quality, low price, large scale substitute substrate becomes the focus of investigation of materials.Because silicon has quality better, size is big and price is low characteristic, and the photoelectric device of on silicon, making and peripheral circuit also be expected to realize integrated, so silicon is more noticeable in multiple substitute substrate.Because the difference of lattice mismatch and thermal coefficient of expansion is difficult in the high-quality gallium nitride film of extension on the silicon substrate.The flexible substrate technology is a kind of important method for preparing the high-quality epitaxially deposited layer.Therefore Hydrogen induced uncoupled coupling flexible substrate will produce far-reaching influence to the development of gallium nitride industry and even overall optical electrical information industry, have huge economy and society and be worth.
Summary of the invention
The objective of the invention is to, a kind of heteroepitaxy flexible substrate of Hydrogen induced uncoupled coupling is provided, it is a kind of flexible substrate of practicality simple for production, and it can prepare the big mismatch epitaxial thin-film material of semiconductor and related device and circuit.
The heteroepitaxy flexible substrate of a kind of Hydrogen induced uncoupled coupling of the present invention is characterized in that, comprising:
One mechanical support substrate plays the mechanical support effect for flexible substrate;
Decoupling intermediate layer forms by hydrogen ion being injected into the mechanical support substrate, and flexible substrate is sent to a place under guard coupling;
One top level structure, it is to form by molecular beam epitaxy, metal organic vapor, sputter, vacuum deposition on the intermediate layer of uncoupling, thickness is lower than 1000 nanometers, finish support jointly with the mechanical support substrate, jointly flexible substrate is realized uncoupled effect with the intermediate layer to epitaxial loayer.
Wherein the mechanical support substrate is a silicon substrate.
Wherein the intermediate layer of uncoupling is injected by hydrogen ion and is formed, and top level structure is and mechanical support substrate identical materials.
Description of drawings
For further specifying technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is the structural representation of flexible substrate.
Fig. 2 a is the cross section transmission electron microscope image pattern of Hydrogen induced uncoupled coupling flexible substrate;
Fig. 2 b is grown on the Hydrogen induced uncoupled coupling flexible substrate 1 micron the gallium nitride and the cross section transmission electron microscope image pattern of substrate;
Fig. 3 is the contrast test of Hydrogen induced uncoupled coupling flexible substrate (CS) and general substrate (TS) behind the growth 1 μ m GaN epitaxial loayer, ω-2 θ DCXRD scanning result a and microcell Raman spectra b.
Embodiment
See also shown in Figure 1, the heteroepitaxy flexible substrate of a kind of Hydrogen induced uncoupled of the present invention coupling, comprising:
One mechanical support substrate 1 plays the mechanical support effect for total, and this mechanical support substrate 1 is GaAs, silicon, gallium antimonide, indium phosphide and sapphire;
Decoupling intermediate layer 2, inject formation by hydrogen ion or hydrogen, total is sent to a place under guard coupling, this de layer 2 is by hydrogen, hydrogen ion, nitrogen, nitrogen ion and argon gas, the injection of inert gases such as argon ion, helium, helium ion forms, and top level structure 3 is materials identical or different with mechanical support substrate 1;
One top level structure 3, thickness is lower than 1000 nanometers, finishes support to epitaxial loayer jointly with the mechanical support substrate, jointly total is realized uncoupled effect with the intermediate layer.
Wherein mechanical support substrate 1 can be that monocrystalline also can be a polycrystalline form with the material of top level structure 3;
Wherein mechanical support substrate 1 mode that coupling layer 2 can adopt ion to inject that gets on is finished, the preparation of top level structure 3 is to adopt preparation methods such as molecular beam epitaxy, metal organic vapor, sputter and vacuum deposition, and the mismatch epitaxial growth can be carried out on identical or different equipment.
The significant effect that the present invention is compared with prior art had
Hydrogen induced uncoupled coupling flexible substrate and general substrate ratio, can be effectively at the mismatch stress that reduces heterostructure, make dislocation and defective be created in mostly in substrate rather than the epitaxial loayer, add its distinctive in resorption, can grow high-quality epitaxial film.
Realize the best way of invention
1, realizes the capital equipment of invention
Semiconductor film film preparation equipment (as molecular beam epitaxy system and metal organic vapor system etc.) and ion implantation device;
Oil-sealed rotary pump+turbomolecular pump (or other vacuum equipment);
Photoetching corrosion equipment;
The semiconductor heat treatment facility;
2, according to the concrete condition of growth apparatus, the growing technology route is suitably adjusted.
3, produce the Hydrogen induced uncoupled coupled structure with ion implant systems, with metal organic vapor or molecular beam growth mismatch epitaxial material.
4, for the device parameter of semiconductor film preparing system, be determined on a case-by-case basis.
Specific embodiment:
(1) with the silicon single crystal material is the mechanical support substrate;
(2) prepare Hydrogen induced uncoupled coupling interlayer structure with ion implantation device;
(3) with grown 1 micron top layer gallium nitride single crystal film of metal organic vapor;
(4) sample is tested with the ω-2 θ diffraction pattern of X diffractometer with x ray double crystal diffraction, the result shows that with the conventional substrate ratio, the asymmetric skew to the low-angle direction has taken place the diffraction curve of Hydrogen induced uncoupled coupling flexible substrate.Show and the conventional substrate ratio that deformation has taken place Hydrogen induced uncoupled coupling flexible substrate, the misfit strain that this acts on when just greatly reducing epitaxial growth on the epitaxial loayer improves the quality of epitaxial loayer;
(5) observation in the transmission electricity border, cross section of Hydrogen induced uncoupled coupling flexible substrate structure as shown in Figure 2.The introducing of hydrogen-induced defect band can be found, the de between top layer silicon and the mechanical support substrate can be formed.
The epitaxy of gallium nitride layer cross section transmission electricity border picture of (6) growing on this Hydrogen induced uncoupled coupling flexible substrate as shown in Figure 3, in near interface substrate one side many micro-cracks are arranged, the existence of these little micro-cracks has strengthened the flexibility of substrate greatly, can discharge stress and prevent dislocation tangle propagation.
Claims (3)
1, a kind of heteroepitaxy flexible substrate of Hydrogen induced uncoupled coupling is characterized in that, comprising:
One mechanical support substrate plays the mechanical support effect for flexible substrate;
Decoupling intermediate layer forms by hydrogen ion being injected into the mechanical support substrate, and flexible substrate is sent to a place under guard coupling;
One top level structure, it is to form by molecular beam epitaxy, metal organic vapor, sputter or vacuum deposition on the intermediate layer of uncoupling, thickness is lower than 1000 nanometers, finish support jointly with the mechanical support substrate, jointly flexible substrate is realized uncoupled effect with the intermediate layer to epitaxial loayer.
2, the heteroepitaxy flexible substrate of Hydrogen induced uncoupled coupling according to claim 1 is characterized in that wherein the mechanical support substrate is a silicon substrate.
3, the heteroepitaxy flexible substrate of Hydrogen induced uncoupled coupling according to claim 1 is characterized in that, wherein the intermediate layer of uncoupling is injected by hydrogen ion and formed, and top level structure is and mechanical support substrate identical materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031553885A CN100345247C (en) | 2003-08-28 | 2003-08-28 | Hydrogen induced uncoupled heteroepitaxial flexible substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031553885A CN100345247C (en) | 2003-08-28 | 2003-08-28 | Hydrogen induced uncoupled heteroepitaxial flexible substrate |
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| Publication Number | Publication Date |
|---|---|
| CN1591772A CN1591772A (en) | 2005-03-09 |
| CN100345247C true CN100345247C (en) | 2007-10-24 |
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| CNB031553885A Expired - Fee Related CN100345247C (en) | 2003-08-28 | 2003-08-28 | Hydrogen induced uncoupled heteroepitaxial flexible substrate |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5374564A (en) * | 1991-09-18 | 1994-12-20 | Commissariat A L'energie Atomique | Process for the production of thin semiconductor material films |
| CN1241803A (en) * | 1998-05-15 | 2000-01-19 | 佳能株式会社 | Process for manufacturing semiconductor substrate as well as semiconductor thin film and multilayer structure |
| CN1260907A (en) * | 1997-06-19 | 2000-07-19 | 旭化成工业株式会社 | SOI substrate and process for preparing same, semi-conductor device and process for preparing same |
| US6607969B1 (en) * | 2002-03-18 | 2003-08-19 | The United States Of America As Represented By The Secretary Of The Navy | Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques |
-
2003
- 2003-08-28 CN CNB031553885A patent/CN100345247C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5374564A (en) * | 1991-09-18 | 1994-12-20 | Commissariat A L'energie Atomique | Process for the production of thin semiconductor material films |
| CN1260907A (en) * | 1997-06-19 | 2000-07-19 | 旭化成工业株式会社 | SOI substrate and process for preparing same, semi-conductor device and process for preparing same |
| CN1241803A (en) * | 1998-05-15 | 2000-01-19 | 佳能株式会社 | Process for manufacturing semiconductor substrate as well as semiconductor thin film and multilayer structure |
| US6607969B1 (en) * | 2002-03-18 | 2003-08-19 | The United States Of America As Represented By The Secretary Of The Navy | Method for making pyroelectric, electro-optical and decoupling capacitors using thin film transfer and hydrogen ion splitting techniques |
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| CN1591772A (en) | 2005-03-09 |
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