CA2536398A1 - A method for extracting the aging factor of flat panels and calibration of programming/biasing - Google Patents
A method for extracting the aging factor of flat panels and calibration of programming/biasing Download PDFInfo
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0693—Calibration of display systems
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
Abstract
Disclosed is a technique to extract the pixel aging data and calibrate the pixel programming or biasing data to provide a highly accurate operation.
Description
FIELD OF THE INVENTION
'The present invention generally relates to the flat panels including light emitting device displays, and sensors.
SUMMARY OF INVENTION
Disclosed technique calibrates the programming/biasing voltages by the extracted aging factor of the pixels.
ADVANTAGES
The programming/biasing of a flat panel becomes highly accurate resulting in less error. Thus, it facilitates the realization of high-resolution large-area flat panels for displays and sensors.
FIG. 1(a) shows a 2-transistor (2T) pixel circuit in active matrix organic light emitting diode (AMOLED) displays with 'n' rows and 'm' columns in which the OLED is at the source of the drive TFT (T1). A pixel circuit in which OLED is at the drain is also depicted in FIG. 1(b). These circuits can be fabricated with any technology including poly silicon, amorphous silicon, organic, and etc. Also, the n-type transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
I is displayed in FIG. 2(a). Here, the aging of pixel (i,j) is extracted by monitoring the voltage of VDD. During the first extraction cycle, gate of T1 at the pixel (i,j) is charged to a calibration voltage (VGC). this voltage includes the aging prediction, calculated based on the previous aging data, and a bias voltage. Also, the other pixel circuits in the ith row are programmed to zero.
During the second extraction cycle, SEL(i) goes to zero and so the gate voltage of T1(i,j) is affected by the dynamic effects such as charge injection and clock feed-through. During this cycle, T1 acts as a amplifier since it is biased with a constant current through VDD(i). Therefore, the effects of shift in the VT
of T1 (i,j) is amplified, and the voltage of the VDD changes accordingly.
Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
During the normal operation shown in FIG. 2(b), the gate of T1 is charged to a calibrated programming voltage (Vcp). Next, during the driving cycle, SEL is low and T1 (i,j) provides current to the OLED (i,j).
FIG. 3 shows the effect of shift in the threshold voltage of T1 (VT shift) on the voltage of the VDD line. It is evident that T1 can provide a reasonable gain so that makes the extraction of small VT shift possible.
FIG. 4(a) shows a 3-transistor (3T) pixel circuit for active matrix organic light emitting diode (AMOLED). A pixel circuit in which OLED is at the drain is also depicted in FIG. 4(b). These circuits can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuits shown in FIG. 4 is displayed in FIG. 5(a). Here, the aging of pixel is extracted by monitoring the voltage of VOUT. Moreover, VOUT can be the same as VDATA line of the physically adjacent column (row).
During the first extraction cycle, gate of T1 is charged to a calibration voltage (Vcc). This voltage includes the aging prediction, calculated based on the previous aging data. During the second extraction cycle, SELI goes to zero, and so the gate voltage of T1 is affected by the dynamic effects including the charge injection and clock feed-through. During the second extraction cycle, T1 acts as an amplifier since it is biased with a constant current through VOUT.
Therefore, the aging of the pixel is amplified, and the voltage of the VOUT
changes accordingly.
Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
Also, applying a current/voltage to the OLED, we can extract the voltage/current of the OLED
and determines the aging factor of the OLED and use it for more accurate calibration of the luminance data.
During the normal operation shown in FIG. 5(b), the gate of TI is charged to a calibrated programming voltage (Vcp). Next, during the driving cycle, SEL is low and T1 provides current to the OLED.
FIG.6 (a) shows a 4-transistor (4T) pixel circuit for active matrix organic light emitting diode (AMOLED). A pixel circuit in which OLED is at the drain is also depicted in FIG.6 (b). These circuits can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept. Also, the position of T3 and T4 can be switched without affecting the functionality of the pixel. Moreover, SEL(j-1] or SEL[j+I] can be replaced with SEL[j]. In this case, SELU] should be ON as the sum of both signal.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
6 is displayed in FIG. 7. Here, the aging of pixel is extracted by monitoring the voltage of VOUT. Moreover, VOUT can be the same as VDATA line of the physically adjacent column (row).
During the first extraction cycle, gate of T1 is charged to a calibration voltage (VGC). This voltage includes the aging prediction, calculated based on the previous aging data. During the second extraction cycle, SEL1 goes to zero and so the gate voltage of TI is affected by the dynamic effects including the charge injection and clock feed-through. During the second extraction cycle, T1 acts as an amplifier since it is biased with a constant current through VOUT.
Therefore, the aging of the pixel is amplified and change the voltage of the VOUT. Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
Also, applying a current/voltage to the OLED, we can extract the voltage/current of the OLED
and determines the aging factor of the OLED and use it for more accurate calibration of the luminance data.
During the normal operation shown in FIG. 7(b), the gate of Tl is charged to a calibrated programming voltage (Vcp). Also, during the driving cycle, SEL is low and Tl (i,j) provides current to the OLED (i,j).
FIG.8 (a) shows a 3-transistor (3T) pixel circuit for active matrix organic light emitting diode (AMOLED). A pixel circuit in which OLED is at the drain is also depicted in FIG.8 (b). These circuits can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
8 is displayed in FIG. 9. Here, the aging of pixel is extracted by monitoring the voltage of VOUT. During the extraction cycle, gate of T1 is charged to a calibration voltage (VGC). This voltage includes the aging prediction which is calculated based on the previous aging data. Also, during the extraction cycle, TI acts as an amplifier since it is biased with a constant current through VOUT. Therefore, the aging of the pixel is amplified and change the voltage of the VOUT.
Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
Also, applying a current/voltage to the OLED, we can extract the voltage/current of the OLED
and determines the aging factor of the OLED and use it for more accurate calibration of the luminance data.
During the normal operation shown in FIG. 9(b), the gate of T1 is charged to a calibrated programming voltage (VcP). Also, during the driving cycle, SEL is low and TI
(i,j) provides current to the OLED (i,j).
FIG.10 (a) shows a 3-transistor (3T) pixel circuit for active matrix organic light emitting diode (AMOLED). A pixel circuit in which OLED is at the drain is also depicted in FIG. 10(b). These circuits can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
10 is displayed in FIG. 11. Here, the aging of pixel is extracted by monitoring the voltage of VDATA. During the first extraction cycle gate voltage of TI is charged to a calibration voltage (VGC) this voltage includes the aging prediction which is calculated based on the previous aging data. Also, during the second extraction cycle, TI acts as an amplifier since it is biased with a constant current through VDATA. Therefore, the aging of the pixel is amplified and change the voltage on the VDATA. Therefore, this method enables extraction of very small amount of VT
shift resulting in highly accurate calibration.
Also, applying a current/voltage to the OLED, we can extract the voltage/current of the OLED
and determines the aging factor of the OLED and use it for more accurate calibration of the luminance data.
During the normal operation shown in FIG. 11(b), the gate of T1 is charged to a calibrated programming voltage (Vcp). Also, during the driving cycle, SEL is low and TI
(i,j) provides current to the OLED (i,j).
FIG.12 shows a 3-transistor (3T) pixel circuit for active matrix for sensor applications including x-ray, imagers, bio-sensors, etc. This circuit can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
12 is displayed in FIG. 13. Here, the aging of pixel is extracted by monitoring the voltage of VOUT. During the first extraction cycle, the gate of Tl is charged to a calibration voltage (VGC). This voltage includes the aging prediction which is calculated based on the previous aging data. During the second extraction cycle, SEL goes to zero and so the gate voltage of T1 is affected by the dynamic effects including the charge injection and clock feed-through. During the second extraction cycle, T1 acts as an amplifier since it is biased with a constant current through VOUT.
Therefore, the aging of the pixel is amplified and change the voltage of the VOUT. Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
During the normal operation shown in FIG. 13(b), the gate of T1 is charged to a calibrated biasing voltage (Vcp). During the second operating cycle, SEL and READ signals are low and the sensor manipulates the gate voltage of T1. During the readout cycle, the voltage at the drain of TI
is read back while a constant biasing current is applied to the VOUT. The change in the gate voltage of T1 is amplified and reflected on VOUT, and so at the end of the readout cycle the pixel data is read back.
FIG.14 shows a 3-transistor (3T) pixel circuit for active matrix for sensor applications including x-ray, imagers, bio-sensors, etc. This circuit can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
14 is displayed in FIG. 14. Here, the aging of pixel is extracted by monitoring the voltage of VBIAS. During the first extraction cycle, the gate of T1 is charged to a calibration voltage (Vcc). This voltage includes the aging prediction which is calculated based on the previous aging data. During the second extraction cycle, SEL goes to zero and so the gate voltage of T1 is affected by the dynamic effects including the charge injection and clock feed-through. During the second extraction cycle, T1 acts as an amplifier since it is biased with a constant current through VBIAS.
Therefore, the aging of the pixel is amplified and change the voltage of the VBIAS. Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
During the normal operation shown in FIG. 15(b), the gate of T1 is charged to a calibrated biasing voltage (Vcp). During the second operating cycle, SEL and READ signals are low and the sensor manipulates the gate voltage of T1. During the readout cycle, the voltage at the drain of T1 is read back while a constant biasing current is applied to the VBIAS. The change in the gate voltage of T1 is amplified and reflected on VBIAS, and so at the end of the readout cycle the pixel data is read back.
'The present invention generally relates to the flat panels including light emitting device displays, and sensors.
SUMMARY OF INVENTION
Disclosed technique calibrates the programming/biasing voltages by the extracted aging factor of the pixels.
ADVANTAGES
The programming/biasing of a flat panel becomes highly accurate resulting in less error. Thus, it facilitates the realization of high-resolution large-area flat panels for displays and sensors.
FIG. 1(a) shows a 2-transistor (2T) pixel circuit in active matrix organic light emitting diode (AMOLED) displays with 'n' rows and 'm' columns in which the OLED is at the source of the drive TFT (T1). A pixel circuit in which OLED is at the drain is also depicted in FIG. 1(b). These circuits can be fabricated with any technology including poly silicon, amorphous silicon, organic, and etc. Also, the n-type transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
I is displayed in FIG. 2(a). Here, the aging of pixel (i,j) is extracted by monitoring the voltage of VDD. During the first extraction cycle, gate of T1 at the pixel (i,j) is charged to a calibration voltage (VGC). this voltage includes the aging prediction, calculated based on the previous aging data, and a bias voltage. Also, the other pixel circuits in the ith row are programmed to zero.
During the second extraction cycle, SEL(i) goes to zero and so the gate voltage of T1(i,j) is affected by the dynamic effects such as charge injection and clock feed-through. During this cycle, T1 acts as a amplifier since it is biased with a constant current through VDD(i). Therefore, the effects of shift in the VT
of T1 (i,j) is amplified, and the voltage of the VDD changes accordingly.
Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
During the normal operation shown in FIG. 2(b), the gate of T1 is charged to a calibrated programming voltage (Vcp). Next, during the driving cycle, SEL is low and T1 (i,j) provides current to the OLED (i,j).
FIG. 3 shows the effect of shift in the threshold voltage of T1 (VT shift) on the voltage of the VDD line. It is evident that T1 can provide a reasonable gain so that makes the extraction of small VT shift possible.
FIG. 4(a) shows a 3-transistor (3T) pixel circuit for active matrix organic light emitting diode (AMOLED). A pixel circuit in which OLED is at the drain is also depicted in FIG. 4(b). These circuits can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuits shown in FIG. 4 is displayed in FIG. 5(a). Here, the aging of pixel is extracted by monitoring the voltage of VOUT. Moreover, VOUT can be the same as VDATA line of the physically adjacent column (row).
During the first extraction cycle, gate of T1 is charged to a calibration voltage (Vcc). This voltage includes the aging prediction, calculated based on the previous aging data. During the second extraction cycle, SELI goes to zero, and so the gate voltage of T1 is affected by the dynamic effects including the charge injection and clock feed-through. During the second extraction cycle, T1 acts as an amplifier since it is biased with a constant current through VOUT.
Therefore, the aging of the pixel is amplified, and the voltage of the VOUT
changes accordingly.
Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
Also, applying a current/voltage to the OLED, we can extract the voltage/current of the OLED
and determines the aging factor of the OLED and use it for more accurate calibration of the luminance data.
During the normal operation shown in FIG. 5(b), the gate of TI is charged to a calibrated programming voltage (Vcp). Next, during the driving cycle, SEL is low and T1 provides current to the OLED.
FIG.6 (a) shows a 4-transistor (4T) pixel circuit for active matrix organic light emitting diode (AMOLED). A pixel circuit in which OLED is at the drain is also depicted in FIG.6 (b). These circuits can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept. Also, the position of T3 and T4 can be switched without affecting the functionality of the pixel. Moreover, SEL(j-1] or SEL[j+I] can be replaced with SEL[j]. In this case, SELU] should be ON as the sum of both signal.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
6 is displayed in FIG. 7. Here, the aging of pixel is extracted by monitoring the voltage of VOUT. Moreover, VOUT can be the same as VDATA line of the physically adjacent column (row).
During the first extraction cycle, gate of T1 is charged to a calibration voltage (VGC). This voltage includes the aging prediction, calculated based on the previous aging data. During the second extraction cycle, SEL1 goes to zero and so the gate voltage of TI is affected by the dynamic effects including the charge injection and clock feed-through. During the second extraction cycle, T1 acts as an amplifier since it is biased with a constant current through VOUT.
Therefore, the aging of the pixel is amplified and change the voltage of the VOUT. Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
Also, applying a current/voltage to the OLED, we can extract the voltage/current of the OLED
and determines the aging factor of the OLED and use it for more accurate calibration of the luminance data.
During the normal operation shown in FIG. 7(b), the gate of Tl is charged to a calibrated programming voltage (Vcp). Also, during the driving cycle, SEL is low and Tl (i,j) provides current to the OLED (i,j).
FIG.8 (a) shows a 3-transistor (3T) pixel circuit for active matrix organic light emitting diode (AMOLED). A pixel circuit in which OLED is at the drain is also depicted in FIG.8 (b). These circuits can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
8 is displayed in FIG. 9. Here, the aging of pixel is extracted by monitoring the voltage of VOUT. During the extraction cycle, gate of T1 is charged to a calibration voltage (VGC). This voltage includes the aging prediction which is calculated based on the previous aging data. Also, during the extraction cycle, TI acts as an amplifier since it is biased with a constant current through VOUT. Therefore, the aging of the pixel is amplified and change the voltage of the VOUT.
Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
Also, applying a current/voltage to the OLED, we can extract the voltage/current of the OLED
and determines the aging factor of the OLED and use it for more accurate calibration of the luminance data.
During the normal operation shown in FIG. 9(b), the gate of T1 is charged to a calibrated programming voltage (VcP). Also, during the driving cycle, SEL is low and TI
(i,j) provides current to the OLED (i,j).
FIG.10 (a) shows a 3-transistor (3T) pixel circuit for active matrix organic light emitting diode (AMOLED). A pixel circuit in which OLED is at the drain is also depicted in FIG. 10(b). These circuits can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
10 is displayed in FIG. 11. Here, the aging of pixel is extracted by monitoring the voltage of VDATA. During the first extraction cycle gate voltage of TI is charged to a calibration voltage (VGC) this voltage includes the aging prediction which is calculated based on the previous aging data. Also, during the second extraction cycle, TI acts as an amplifier since it is biased with a constant current through VDATA. Therefore, the aging of the pixel is amplified and change the voltage on the VDATA. Therefore, this method enables extraction of very small amount of VT
shift resulting in highly accurate calibration.
Also, applying a current/voltage to the OLED, we can extract the voltage/current of the OLED
and determines the aging factor of the OLED and use it for more accurate calibration of the luminance data.
During the normal operation shown in FIG. 11(b), the gate of T1 is charged to a calibrated programming voltage (Vcp). Also, during the driving cycle, SEL is low and TI
(i,j) provides current to the OLED (i,j).
FIG.12 shows a 3-transistor (3T) pixel circuit for active matrix for sensor applications including x-ray, imagers, bio-sensors, etc. This circuit can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
12 is displayed in FIG. 13. Here, the aging of pixel is extracted by monitoring the voltage of VOUT. During the first extraction cycle, the gate of Tl is charged to a calibration voltage (VGC). This voltage includes the aging prediction which is calculated based on the previous aging data. During the second extraction cycle, SEL goes to zero and so the gate voltage of T1 is affected by the dynamic effects including the charge injection and clock feed-through. During the second extraction cycle, T1 acts as an amplifier since it is biased with a constant current through VOUT.
Therefore, the aging of the pixel is amplified and change the voltage of the VOUT. Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
During the normal operation shown in FIG. 13(b), the gate of T1 is charged to a calibrated biasing voltage (Vcp). During the second operating cycle, SEL and READ signals are low and the sensor manipulates the gate voltage of T1. During the readout cycle, the voltage at the drain of TI
is read back while a constant biasing current is applied to the VOUT. The change in the gate voltage of T1 is amplified and reflected on VOUT, and so at the end of the readout cycle the pixel data is read back.
FIG.14 shows a 3-transistor (3T) pixel circuit for active matrix for sensor applications including x-ray, imagers, bio-sensors, etc. This circuit can be fabricated in any technologies including poly silicon, amorphous silicon, organic TFTs, and etc. Also, the transistors can be replaced with p-type transistors based on complementary circuit concept.
The signal diagram for extracting the aging of the pixel circuit shown in FIG.
14 is displayed in FIG. 14. Here, the aging of pixel is extracted by monitoring the voltage of VBIAS. During the first extraction cycle, the gate of T1 is charged to a calibration voltage (Vcc). This voltage includes the aging prediction which is calculated based on the previous aging data. During the second extraction cycle, SEL goes to zero and so the gate voltage of T1 is affected by the dynamic effects including the charge injection and clock feed-through. During the second extraction cycle, T1 acts as an amplifier since it is biased with a constant current through VBIAS.
Therefore, the aging of the pixel is amplified and change the voltage of the VBIAS. Therefore, this method enables extraction of very small amount of VT shift resulting in highly accurate calibration.
During the normal operation shown in FIG. 15(b), the gate of T1 is charged to a calibrated biasing voltage (Vcp). During the second operating cycle, SEL and READ signals are low and the sensor manipulates the gate voltage of T1. During the readout cycle, the voltage at the drain of T1 is read back while a constant biasing current is applied to the VBIAS. The change in the gate voltage of T1 is amplified and reflected on VBIAS, and so at the end of the readout cycle the pixel data is read back.
Claims
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002536398A CA2536398A1 (en) | 2006-02-10 | 2006-02-10 | A method for extracting the aging factor of flat panels and calibration of programming/biasing |
| CA002541347A CA2541347A1 (en) | 2006-02-10 | 2006-02-10 | A method for driving and calibrating of amoled displays |
| CA002576811A CA2576811C (en) | 2006-02-10 | 2007-02-09 | Method and system for light emitting device displays |
| JP2008553587A JP2009526248A (en) | 2006-02-10 | 2007-02-09 | Method and system for light emitting device indicator |
| EP07710608.6A EP1987507B1 (en) | 2006-02-10 | 2007-02-09 | Method and system for electroluminescent displays |
| TW096104837A TWI450247B (en) | 2006-02-10 | 2007-02-09 | Method and system for pixel circuit displays |
| US11/673,512 US7924249B2 (en) | 2006-02-10 | 2007-02-09 | Method and system for light emitting device displays |
| CN200780013047XA CN101449311B (en) | 2006-02-10 | 2007-02-09 | Method and system for light emitting device displays |
| KR1020087022116A KR20080098057A (en) | 2006-02-10 | 2007-02-09 | Method and system for light emitting device displays |
| PCT/CA2007/000192 WO2007090287A1 (en) | 2006-02-10 | 2007-02-09 | Method and system for light emitting device displays |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002536398A CA2536398A1 (en) | 2006-02-10 | 2006-02-10 | A method for extracting the aging factor of flat panels and calibration of programming/biasing |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002541347A Division CA2541347A1 (en) | 2006-02-10 | 2006-02-10 | A method for driving and calibrating of amoled displays |
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| CA002541347A Abandoned CA2541347A1 (en) | 2006-02-10 | 2006-02-10 | A method for driving and calibrating of amoled displays |
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| CN108073007B (en) * | 2016-11-10 | 2021-08-13 | 元太科技工业股份有限公司 | Pixel array |
| CN110288956B (en) | 2019-05-06 | 2021-11-30 | 重庆惠科金渝光电科技有限公司 | Display device |
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Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6771028B1 (en) * | 2003-04-30 | 2004-08-03 | Eastman Kodak Company | Drive circuitry for four-color organic light-emitting device |
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2006
- 2006-02-10 CA CA002536398A patent/CA2536398A1/en not_active Abandoned
- 2006-02-10 CA CA002541347A patent/CA2541347A1/en not_active Abandoned
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- 2007-02-09 CN CN200780013047XA patent/CN101449311B/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10269294B2 (en) | 2012-12-24 | 2019-04-23 | Lg Display Co., Ltd. | Organic light emitting diode display device and method for driving the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101449311B (en) | 2012-09-05 |
| CA2541347A1 (en) | 2007-08-10 |
| CN101449311A (en) | 2009-06-03 |
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