CA2250788C - Manufacturing process and structure of ink jet printhead - Google Patents
Manufacturing process and structure of ink jet printhead Download PDFInfo
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- CA2250788C CA2250788C CA 2250788 CA2250788A CA2250788C CA 2250788 C CA2250788 C CA 2250788C CA 2250788 CA2250788 CA 2250788 CA 2250788 A CA2250788 A CA 2250788A CA 2250788 C CA2250788 C CA 2250788C
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 80
- 238000002161 passivation Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000004544 sputter deposition Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 6
- 229910052772 Samarium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 6
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000002341 toxic gas Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
A manufacturing process and a structure for an ink jet printhead with high quality, yield rate, and performance are provided. The process includes steps of: a) providing a substrate, b) forming a dielectric layer over the substrate, c) forming a resistor over the dielectric layer, d) forming a conducting layer over a portion of the resistor, e) forming a passivation over a portion of the conducting layer and another portion of the resistor not covered by the conducting layer, f) forming a hole over the passivation for storing an ink, and g) forming a nozzle over the hole for ejecting therethrough the ink.
Description
CA 022~0788 1998-12-16 FIELD OF THE INVENTION
The present invention is related to a manufacturing process and structure of an ink jet printhead, and especially to an improved manufacturing process and structure of an ink jet printhead with high quality, yield rate, and perforrnance.
BACKGROUND OF THE INVENTION
Generally, the bubble ink jet printhead ejects ink through a nozzle by using resistor device to boil the ink. During the process for manufacturing the conventional ink jet printhead, some toxic gas is generated and some operational difficulties reduce the yield rate. In addition, the conventional ink jet printhead has a shorter lifetime 15 resulting from the overall structure problem.
In order to understand the conventional process for manufacturing the conventional ink jet printhead, please refer to Fig. 1. A silicon dioxide layer 12 is formed on a silicon substrate 11 by thermal oxidation and a resistor 13 (e.g. tantalum-aluminum alloy) is forrned on the silicon 20 dioxide layer 12 through a sputtering process. Thereafter, an aluminum-conducting layer 14 is forrned on a portion of the resistor 13 by sputtering process and then a passivation 15 is formed over the conducting layer 12 and the resistor 13, not covered by the conducting layer 14, by plasma enhanced chemical vapor deposition (PECVD). The 25 passivation 15 is a silicon nitride (Si3N4) /silicon carbide (SiC) layer.
Finally, an isolator 16 is forrned on the passivation 15 and then a nozle plate 17 is stuclc on the isolator 16 by an adhesive agent.
CA 022~0788 1998-12-16 In the conventional process, the resistor 13 is usually made of tantalum-aluminum alloy. Because the tantalum-aluminum alloy is a material with high resistance, a phenomenon of electron migration will be generated when a current passes through the resistor and is 5 accumulated to cause the resistor at a high temperature so that the useful lifetime of the ink jet printhead is reduced. In addition, there are some toxic gas generated during the process for forming the silicon nitride (Si3N4) /silicon carbide (SiC) layer by PECVD. Therefore, an object of the present invention is to provide an improved process for 10 manufacturing the ink jet printhead to avoid the above described defects of the conventional process.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a manufacturing process and structure of an ink jet printhead with low resistance in order 15 to prolong the lifetime of the ink jet printhead and to avoid generating toxic gas upon manufacturing.
According to the present invention, the process includes steps of: a) providing a substrate; b) forming a dielectric layer over the substrate; c) forming a resistor over the dielectric layer and forming a doping resistor 20 layer after the resistor is doped through a doping drive-in procedure; d) forming a conducting layer over a portion of the resistor; e) forming a passivation over a portion of the conducting layer and another portion of the resistor not covered by the conducting layer; f) forming a hole over the passivation for storing an ink; and g) forming a nozzle over the hole 25 for ejecting therethrough the ink.
In accordance with one aspect of the present invention, the dielectric layer is formed by thermal oxidation.
CA 022~0788 1998-12-16 In accordance with another aspect of the present invention, the dielectric layer is a silicon dioxide layer.
In accordance with another aspect of the present invention, the, resistor is a tantalum nitride (TaN) layer.
In accordance with another aspect of the present invention, the doping drive-in procedure is a diffilsion method or ion implantation.
In accordance with another aspect of the present invention, the doping drive-in procedure uses an element with an atomic radius which is 10~30% of that of tantalum as a dopant source.
In accordance with another aspect of the present invention, the doping resistor layer is a metal layer containing an element selected from a group consisting of tantalum (Ta), indium (In), lead (Pb), praseodymium (Pr), and samarium (Sm).
In accordance with another aspect of the present invention, the 15 conducting layer is formed by sputtering process, photolithography, and etching technique.
In accordance with another aspect of the present invention, the conducting layer is an aluminum metal layer.
In accordance with another aspect of the present invention, the 20 passivation is formed by plasma enhanced chemical vapor deposition (PECVD) or direct current (DC) sputtering technique.
In accordance with another aspect of the present invention, the passivation is a silicon nitride layer.
In accordance with another aspect of the present invention, after 25 the step (e), the process further includes a step for forrning a metal layer over another portion of the conducting layer not covered by the passivatlon.
CA 022~0788 1998-12-16 In accordance with another aspect of the present invention, the metal layer is a gold (Au) metal layer formed by sputtering process.
In accordance with another aspect of the present invention, the hole is defined by forming a photoresist over a portion of the passivation.
5In accordance with another aspect of the present invention, the nozle is formed by using a nozzle plate attached to the photoresist.
Another object of the present invention is to provide a preferable process for manufacturing an ink jet printhead.
In the preferred embodiment of the present invention, the process 10includes steps of: a) providing a substrate; b) forrning a dielectric layer over the substrate; c) forming a first resistor over the dielectric layer; d) forming a doping layer over the f1rst resistor; e) forming a second resistor over the doping layer; f) forming a resistor layer after the doping layer is diffused to the first and second resistors; g) forming a 15conducting layer over a portion of the resistor layer; h) forming a passivation over a portion of the conducting layer and another portion of the resistor layer not covered by the conducting layer; i) forming a hole over the passivation for storing an ink; and j) forrning a nozzle over the hole for ejecting therethrough the ink.
20In accordance with one aspect of the present invention, the first resistor is a tantalum nitride (TaN) layer forrned by direct current (DC) sputtering technique.
In accordance with another aspect of the present invention, the doping layer contains an element with an atomic radius which is 2510~3 O% of that of tantalum.
In accordance with another aspect of the present invention, the doping layer is formed by direct current (DC) sputtering technique.
CA 022~0788 1998-12-16 In accordance with another aspect of the present invention, the doping layer is a metal layer containing an element selected from a group consisting of indium (In), lead (Pb), praseodymium (Pr), and samarium (Sm).
In accordance with another aspect of the present invention, the second resistor is a tantalum nitride (TaN) layer formed by direct current (DC) sputtering technique.
In accordance with anothér aspect of the present invention, the resistor layer is formed through a rapid thermal process (RTP).
Another object of the present invention is to provide a structure of an ink jet printhead.
The structure according to the present invention includes: 1) a substrate; 2) a dielectric layer formed on the substrate; 3) a resistor formed on the dielectric layer; 4) a conducting layer formed over a 15 portion of the resistor; 5) a passivation forrned over a portion of the conducting layer and another portion of the resistor not covered by the conducting layer; 6) a photoresist formed over a portion of the passivation for providing a hole to store an ink therein; a metal layer formed over another portion of the conducting layer not covered by the 20 passivation; and a nozzle plate positioned over the passivation for providing at least a nozzle corresponding to the hole to eject the ink.
The present invention may best be understood through the following description with reference to the accompanying drawings, in which:
Fig. 1 is a schematic diagram showing the conventional ink jet printhead;
CA 022~0788 1998-12-16 Fig. 2 (a)~(f) are schematic diagrams showing a preferred embodiment of the processes for manufacturing an ink jet printhead according to the present invention; and Fig. 3 (a) ~(e) are schematic diagrams showing another preferred 5 embodiment of the processes for forming a resistor of the ink jet printhead according to the present invention.
DETAILED DESCRIPTION OF TH~ PREFERRED EMBODIMENT
Please refer to Fig. 2 (a)~(~f) showing a preferred embodiment of the process for manufacturing an ink jet printhead according to the 10 present invention. The detailed manufacturing processes are described as follows.
In Fig. 2 (a), a dielectric layer 22 is formed over a silicon substrate 21 by thermal o~cidation. The dielectric layer 22 can be a silicon dioxide layer 22.
As shown in Fig. 2 (b), a resistor 23 is formed over the silicon dioxide layer 22 by direct current (DC) sputtering technique. The resistor 23 can be a tantalum nitride (TaN) layer. Compared with the conventional ink jet printhead, the TaN layer has a lower resistance in comparison with tantalum-aluminum alloy so that the lifetime of the ink 20 jet printhead of the present invention can be extended.
The step shown in Fig. 2 (c) is to form a conducting layer 24 over a portion of the resistor 23 by sputtering process, photolithography, and etching technique. The conducting layer 24 can be an aluminum metal layer.
In Fig. 2 (d), a passivation 25 is formed over a portion of the conducting layer 24 and another portion of the resistor 23, not covered by the conducting layer 24, by plasma enhanced chemical vapor CA 022~0788 1998-12-16 deposition (PECVD) or direct current (DC) sputtering technique The passivation 25 can be a silicon nitride layer 25. If the silicon nitride layer 25 is formed by direct current (DC) sputtering technique, it can prevent from generating any toxic gas during the manufacturing process 5 of the present invention. Moreover, if the silicon nitride layer 25 is formed by direct current (DC) sputtering technique, the process can be easily completed only by introducing nitrogen gas (N2) therein.
Therefore, they greatly improve the process for manufacturing the ink jet printhead.
As shown in Fig. 2 (e), a metal layer 26 is formed over another portion of the conducting layer 24 not covered by the passivation 25 by sputtering process: The metal layer 26 is a gold (Au) metal layer.
Thereafter, a photoresist 27is formed over a portion of the passivation for forming a hole to store ink therein.
In Fig. 2 (f), a nozzle plate 28is attached to the photoresist 27 for providing at least a nozzle to eject therethrough the ink.
In a preferred embodiment of the process of the present invention (not shown), the resistor 23 can be doped through a doping drive-in procedure to form a doping resistor layer. The doping drive-in procedure 20 can be executed by diffusion method or ion implantation. The resistor 23 is a tantalum nitride (TaN) layer 23. The doping drive-in procedure uses an element with an atomic radius which is 10~30% of that of tantalum as a dopant source. Preferably, the doping resistor layer can be a metal layer containing tantalum (Ta), indium (In), lead (Pb), 25 praseodymium (Pr), or samarium (Sm). Other steps for maufacturing the ink jet printhead of the present invention are the same as those described above.
CA 022~0788 1998-12-16 In another preferred embodiment of the process of the present invention, a dielectric layer 22 is formed over a silicon substrate 21 by thermal oxidation and a resistor 23 is formed by processes as shown in Fig. 3 (a)~(e). First of all, a first resistor 231 is formed over the 5 dielectric layer 22 by direct current (DC) sputtering technique, wherein the first resistor 231 is a tantalum nitride (TaN) layer. Thereafter, a doping layer 232 is formed over the first resistor 231 by direct current (DC) sputtering technique. The doping layer 232 is doped by an element with an atomic radius which is 10~30% of that of tantalum.
10 Preferably, the doping layer 232 can be a metal layer containing indium (In), lead (Pb), praseodymium (Pr), or samarium (Sm). Thenceforth, a second resistor 233 is formed over the doping layer 232 by direct current (DC) sputtering technique. The second resistor 233 can be a tantalum nitride (TaN) layer. Finally, the resistor 23 can be obtained 15 after the doping layer 232 is diffused to the first and second resistors 231 and 233 through a rapid thermal process (RTP). The following steps for completely manufacturing the ink jet printhead of the present invention are the same as those described above.
The present invention provides a rapid process for manufacturing 20 the ink jet printhead. The resistor 23 can be effectively free from phenomenon of electron migration so that the resistor will not be damaged due to a long overheating time and the useful lifetime of the ink jet printhead can be elongated.
In conclusion, the present invention provides an improved 25 manufacturing process and structure of an ink jet printhead with high quality, yield rate, and performance to avoid the defects of the CA 022~0788 1998-12-16 conventional process such as uneasy control, generating toxic gas, short useful lifetime and so on.
While the invention has been described in terms of what are presently considered to be the most practical and preferred 5 embodiments, it is to be understood that the invention need not be limited to the disclosed embodiment. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all such 10 modifications and similar structures.
The present invention is related to a manufacturing process and structure of an ink jet printhead, and especially to an improved manufacturing process and structure of an ink jet printhead with high quality, yield rate, and perforrnance.
BACKGROUND OF THE INVENTION
Generally, the bubble ink jet printhead ejects ink through a nozzle by using resistor device to boil the ink. During the process for manufacturing the conventional ink jet printhead, some toxic gas is generated and some operational difficulties reduce the yield rate. In addition, the conventional ink jet printhead has a shorter lifetime 15 resulting from the overall structure problem.
In order to understand the conventional process for manufacturing the conventional ink jet printhead, please refer to Fig. 1. A silicon dioxide layer 12 is formed on a silicon substrate 11 by thermal oxidation and a resistor 13 (e.g. tantalum-aluminum alloy) is forrned on the silicon 20 dioxide layer 12 through a sputtering process. Thereafter, an aluminum-conducting layer 14 is forrned on a portion of the resistor 13 by sputtering process and then a passivation 15 is formed over the conducting layer 12 and the resistor 13, not covered by the conducting layer 14, by plasma enhanced chemical vapor deposition (PECVD). The 25 passivation 15 is a silicon nitride (Si3N4) /silicon carbide (SiC) layer.
Finally, an isolator 16 is forrned on the passivation 15 and then a nozle plate 17 is stuclc on the isolator 16 by an adhesive agent.
CA 022~0788 1998-12-16 In the conventional process, the resistor 13 is usually made of tantalum-aluminum alloy. Because the tantalum-aluminum alloy is a material with high resistance, a phenomenon of electron migration will be generated when a current passes through the resistor and is 5 accumulated to cause the resistor at a high temperature so that the useful lifetime of the ink jet printhead is reduced. In addition, there are some toxic gas generated during the process for forming the silicon nitride (Si3N4) /silicon carbide (SiC) layer by PECVD. Therefore, an object of the present invention is to provide an improved process for 10 manufacturing the ink jet printhead to avoid the above described defects of the conventional process.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a manufacturing process and structure of an ink jet printhead with low resistance in order 15 to prolong the lifetime of the ink jet printhead and to avoid generating toxic gas upon manufacturing.
According to the present invention, the process includes steps of: a) providing a substrate; b) forming a dielectric layer over the substrate; c) forming a resistor over the dielectric layer and forming a doping resistor 20 layer after the resistor is doped through a doping drive-in procedure; d) forming a conducting layer over a portion of the resistor; e) forming a passivation over a portion of the conducting layer and another portion of the resistor not covered by the conducting layer; f) forming a hole over the passivation for storing an ink; and g) forming a nozzle over the hole 25 for ejecting therethrough the ink.
In accordance with one aspect of the present invention, the dielectric layer is formed by thermal oxidation.
CA 022~0788 1998-12-16 In accordance with another aspect of the present invention, the dielectric layer is a silicon dioxide layer.
In accordance with another aspect of the present invention, the, resistor is a tantalum nitride (TaN) layer.
In accordance with another aspect of the present invention, the doping drive-in procedure is a diffilsion method or ion implantation.
In accordance with another aspect of the present invention, the doping drive-in procedure uses an element with an atomic radius which is 10~30% of that of tantalum as a dopant source.
In accordance with another aspect of the present invention, the doping resistor layer is a metal layer containing an element selected from a group consisting of tantalum (Ta), indium (In), lead (Pb), praseodymium (Pr), and samarium (Sm).
In accordance with another aspect of the present invention, the 15 conducting layer is formed by sputtering process, photolithography, and etching technique.
In accordance with another aspect of the present invention, the conducting layer is an aluminum metal layer.
In accordance with another aspect of the present invention, the 20 passivation is formed by plasma enhanced chemical vapor deposition (PECVD) or direct current (DC) sputtering technique.
In accordance with another aspect of the present invention, the passivation is a silicon nitride layer.
In accordance with another aspect of the present invention, after 25 the step (e), the process further includes a step for forrning a metal layer over another portion of the conducting layer not covered by the passivatlon.
CA 022~0788 1998-12-16 In accordance with another aspect of the present invention, the metal layer is a gold (Au) metal layer formed by sputtering process.
In accordance with another aspect of the present invention, the hole is defined by forming a photoresist over a portion of the passivation.
5In accordance with another aspect of the present invention, the nozle is formed by using a nozzle plate attached to the photoresist.
Another object of the present invention is to provide a preferable process for manufacturing an ink jet printhead.
In the preferred embodiment of the present invention, the process 10includes steps of: a) providing a substrate; b) forrning a dielectric layer over the substrate; c) forming a first resistor over the dielectric layer; d) forming a doping layer over the f1rst resistor; e) forming a second resistor over the doping layer; f) forming a resistor layer after the doping layer is diffused to the first and second resistors; g) forming a 15conducting layer over a portion of the resistor layer; h) forming a passivation over a portion of the conducting layer and another portion of the resistor layer not covered by the conducting layer; i) forming a hole over the passivation for storing an ink; and j) forrning a nozzle over the hole for ejecting therethrough the ink.
20In accordance with one aspect of the present invention, the first resistor is a tantalum nitride (TaN) layer forrned by direct current (DC) sputtering technique.
In accordance with another aspect of the present invention, the doping layer contains an element with an atomic radius which is 2510~3 O% of that of tantalum.
In accordance with another aspect of the present invention, the doping layer is formed by direct current (DC) sputtering technique.
CA 022~0788 1998-12-16 In accordance with another aspect of the present invention, the doping layer is a metal layer containing an element selected from a group consisting of indium (In), lead (Pb), praseodymium (Pr), and samarium (Sm).
In accordance with another aspect of the present invention, the second resistor is a tantalum nitride (TaN) layer formed by direct current (DC) sputtering technique.
In accordance with anothér aspect of the present invention, the resistor layer is formed through a rapid thermal process (RTP).
Another object of the present invention is to provide a structure of an ink jet printhead.
The structure according to the present invention includes: 1) a substrate; 2) a dielectric layer formed on the substrate; 3) a resistor formed on the dielectric layer; 4) a conducting layer formed over a 15 portion of the resistor; 5) a passivation forrned over a portion of the conducting layer and another portion of the resistor not covered by the conducting layer; 6) a photoresist formed over a portion of the passivation for providing a hole to store an ink therein; a metal layer formed over another portion of the conducting layer not covered by the 20 passivation; and a nozzle plate positioned over the passivation for providing at least a nozzle corresponding to the hole to eject the ink.
The present invention may best be understood through the following description with reference to the accompanying drawings, in which:
Fig. 1 is a schematic diagram showing the conventional ink jet printhead;
CA 022~0788 1998-12-16 Fig. 2 (a)~(f) are schematic diagrams showing a preferred embodiment of the processes for manufacturing an ink jet printhead according to the present invention; and Fig. 3 (a) ~(e) are schematic diagrams showing another preferred 5 embodiment of the processes for forming a resistor of the ink jet printhead according to the present invention.
DETAILED DESCRIPTION OF TH~ PREFERRED EMBODIMENT
Please refer to Fig. 2 (a)~(~f) showing a preferred embodiment of the process for manufacturing an ink jet printhead according to the 10 present invention. The detailed manufacturing processes are described as follows.
In Fig. 2 (a), a dielectric layer 22 is formed over a silicon substrate 21 by thermal o~cidation. The dielectric layer 22 can be a silicon dioxide layer 22.
As shown in Fig. 2 (b), a resistor 23 is formed over the silicon dioxide layer 22 by direct current (DC) sputtering technique. The resistor 23 can be a tantalum nitride (TaN) layer. Compared with the conventional ink jet printhead, the TaN layer has a lower resistance in comparison with tantalum-aluminum alloy so that the lifetime of the ink 20 jet printhead of the present invention can be extended.
The step shown in Fig. 2 (c) is to form a conducting layer 24 over a portion of the resistor 23 by sputtering process, photolithography, and etching technique. The conducting layer 24 can be an aluminum metal layer.
In Fig. 2 (d), a passivation 25 is formed over a portion of the conducting layer 24 and another portion of the resistor 23, not covered by the conducting layer 24, by plasma enhanced chemical vapor CA 022~0788 1998-12-16 deposition (PECVD) or direct current (DC) sputtering technique The passivation 25 can be a silicon nitride layer 25. If the silicon nitride layer 25 is formed by direct current (DC) sputtering technique, it can prevent from generating any toxic gas during the manufacturing process 5 of the present invention. Moreover, if the silicon nitride layer 25 is formed by direct current (DC) sputtering technique, the process can be easily completed only by introducing nitrogen gas (N2) therein.
Therefore, they greatly improve the process for manufacturing the ink jet printhead.
As shown in Fig. 2 (e), a metal layer 26 is formed over another portion of the conducting layer 24 not covered by the passivation 25 by sputtering process: The metal layer 26 is a gold (Au) metal layer.
Thereafter, a photoresist 27is formed over a portion of the passivation for forming a hole to store ink therein.
In Fig. 2 (f), a nozzle plate 28is attached to the photoresist 27 for providing at least a nozzle to eject therethrough the ink.
In a preferred embodiment of the process of the present invention (not shown), the resistor 23 can be doped through a doping drive-in procedure to form a doping resistor layer. The doping drive-in procedure 20 can be executed by diffusion method or ion implantation. The resistor 23 is a tantalum nitride (TaN) layer 23. The doping drive-in procedure uses an element with an atomic radius which is 10~30% of that of tantalum as a dopant source. Preferably, the doping resistor layer can be a metal layer containing tantalum (Ta), indium (In), lead (Pb), 25 praseodymium (Pr), or samarium (Sm). Other steps for maufacturing the ink jet printhead of the present invention are the same as those described above.
CA 022~0788 1998-12-16 In another preferred embodiment of the process of the present invention, a dielectric layer 22 is formed over a silicon substrate 21 by thermal oxidation and a resistor 23 is formed by processes as shown in Fig. 3 (a)~(e). First of all, a first resistor 231 is formed over the 5 dielectric layer 22 by direct current (DC) sputtering technique, wherein the first resistor 231 is a tantalum nitride (TaN) layer. Thereafter, a doping layer 232 is formed over the first resistor 231 by direct current (DC) sputtering technique. The doping layer 232 is doped by an element with an atomic radius which is 10~30% of that of tantalum.
10 Preferably, the doping layer 232 can be a metal layer containing indium (In), lead (Pb), praseodymium (Pr), or samarium (Sm). Thenceforth, a second resistor 233 is formed over the doping layer 232 by direct current (DC) sputtering technique. The second resistor 233 can be a tantalum nitride (TaN) layer. Finally, the resistor 23 can be obtained 15 after the doping layer 232 is diffused to the first and second resistors 231 and 233 through a rapid thermal process (RTP). The following steps for completely manufacturing the ink jet printhead of the present invention are the same as those described above.
The present invention provides a rapid process for manufacturing 20 the ink jet printhead. The resistor 23 can be effectively free from phenomenon of electron migration so that the resistor will not be damaged due to a long overheating time and the useful lifetime of the ink jet printhead can be elongated.
In conclusion, the present invention provides an improved 25 manufacturing process and structure of an ink jet printhead with high quality, yield rate, and performance to avoid the defects of the CA 022~0788 1998-12-16 conventional process such as uneasy control, generating toxic gas, short useful lifetime and so on.
While the invention has been described in terms of what are presently considered to be the most practical and preferred 5 embodiments, it is to be understood that the invention need not be limited to the disclosed embodiment. On the contrary, it is intended to cover various modifications and similar arrangements included within the spirit and scope of the appended claims which are to be accorded with the broadest interpretation so as to encompass all such 10 modifications and similar structures.
Claims (22)
1. A process for manufacturing an ink jet printhead comprising steps of:
a) providing a substrate;
b) forming a dielectric layer over said substrate;
c) forming a resistor over said dielectric layer, and forming a doping layer over said resistor doping said resistor by drive-in procedure using an element with an atomic radius which is 10-30% of that of tantalum as a dopant source to form a resistor layer;
d) forming a conducting layer over a portion of said resistor layer;
e) forming a passivation over a portion of said conducting layer;
f) forming a hole over said passivation for storing an ink; and g) forming a nozzle over said hole for ejecting therethrough said ink.
a) providing a substrate;
b) forming a dielectric layer over said substrate;
c) forming a resistor over said dielectric layer, and forming a doping layer over said resistor doping said resistor by drive-in procedure using an element with an atomic radius which is 10-30% of that of tantalum as a dopant source to form a resistor layer;
d) forming a conducting layer over a portion of said resistor layer;
e) forming a passivation over a portion of said conducting layer;
f) forming a hole over said passivation for storing an ink; and g) forming a nozzle over said hole for ejecting therethrough said ink.
2. The process according to Claim 1, wherein said dielectric layer is formed by thermal oxidation.
3. The process according to Claim 1, wherein said dielectric layer is a silicon dioxide layer.
4. The process according to Claim 1, wherein said resistor is a tantalum nitride layer.
5. The process according to Claim 1, wherein said doping drive-in procedure is one of diffusion method and ion implantation.
6. The process according to Claim 1, wherein said doping resistor layer is a metal layer containing an element selected from a group consisting of tantalum, indium, lead, praseodymium, and samarium.
7. The process according to Claim 1, wherein said conducting layer is formed by sputtering process, photolithography, and etching technique.
8. The process according to Claim 1, wherein said conducting layer is an aluminum metal layer.
9. The process according to Claim 1, wherein said passivation is formed by one of plasma enhanced chemical vapor deposition and direct current sputtering technique.
10. The process according to Claim 1, wherein said passivation is a silicon nitride layer.
11. The process according to claim 1, further comprising a step after said step e):
g) forming a metal layer over another portion of said conducting layer not covered by said passivation.
g) forming a metal layer over another portion of said conducting layer not covered by said passivation.
12. The process according to Claim 11, wherein said metal layer is a gold metal layer formed by sputtering process.
13. The process according to Claim 1, wherein said hole is defined by forming a photoresist over a portion of said passivation.
14. The process according to Claim 1, wherein said nozzle is formed by using a nozzle plate attached to said photoresist.
15. A process for manufacturing an ink jet printhead comprising steps of:
a) providing a substrate;
b) forming a dielectric layer over said substrate;
c) forming a first resistor over said dielectric layer;
d) forming a doping layer over said first resistor;
e) forming a second resistor over said doping layer;
f) forming a resistor layer formed by said first and said second resistors after said doping layer is diffused to said first and second resistors;
g) forming a conducting layer over a portion of resistor layer;
h) forming a passivation over a portion of said conducting layer and another portion of said resistor layer not covered by said conducting layer;
i) forming a hole over said passivation for storing an ink; and j) forming a nozzle over said hole for ejecting therethrough said ink.
a) providing a substrate;
b) forming a dielectric layer over said substrate;
c) forming a first resistor over said dielectric layer;
d) forming a doping layer over said first resistor;
e) forming a second resistor over said doping layer;
f) forming a resistor layer formed by said first and said second resistors after said doping layer is diffused to said first and second resistors;
g) forming a conducting layer over a portion of resistor layer;
h) forming a passivation over a portion of said conducting layer and another portion of said resistor layer not covered by said conducting layer;
i) forming a hole over said passivation for storing an ink; and j) forming a nozzle over said hole for ejecting therethrough said ink.
16. The process according to Claim 15, wherein said first resistor is a tantalum nitride layer formed by direct current sputtering technique.
17. The process according to Claim 15, wherein said doping layer contains an element with an atomic radius which is 10-30% of that of tantalum.
18. The process according to Claim 15, wherein said doping layer is formed by direct current sputtering technique
19. The process according to Claim 15, wherein said doping layer is a metal layer containing an element selected from a group consisting of tantalum, indium, lead, praseodymium, and samarium.
20. The process according to Claim 15, wherein said second resistor is a tantalum nitride layer formed by direct current sputtering technique.
21. The process according to Claim 15, wherein said resistor layer is formed through a rapid thermal process.
22. A structure of an ink jet printhead comprising:
a substrate;
a dielectric layer formed on said substrate;
a resistor layer formed on said dielectric layer;
a conducting layer formed over a portion of said resistor layer;
a passivation formed over a portion of said conducting layer and another portion of said resistor layer not covered by said conducting layer;
a photoresist formed over a portion of said passivation for providing a hole to store an ink herein;
a metal layer formed over another portion of said conducting layer not covered by said passivation; and a nozzle plate positioned over said passivation for providing at least one nozzle corresponding to said hole to eject said ink.
a substrate;
a dielectric layer formed on said substrate;
a resistor layer formed on said dielectric layer;
a conducting layer formed over a portion of said resistor layer;
a passivation formed over a portion of said conducting layer and another portion of said resistor layer not covered by said conducting layer;
a photoresist formed over a portion of said passivation for providing a hole to store an ink herein;
a metal layer formed over another portion of said conducting layer not covered by said passivation; and a nozzle plate positioned over said passivation for providing at least one nozzle corresponding to said hole to eject said ink.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97121345.3 | 1997-10-21 | ||
| CN97121341.0 | 1997-10-21 | ||
| CN97121346A CN1074358C (en) | 1997-10-21 | 1997-10-21 | Ink-jetting head making process and structure |
| CN97121345A CN1080646C (en) | 1997-10-21 | 1997-10-21 | Method for forming electric resistance layer of ink-jetting head |
| CN97121341A CN1072117C (en) | 1997-10-21 | 1997-10-21 | Ink-jetting head electric resistance layer making process |
| CN97121346.1 | 1997-10-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2250788A1 CA2250788A1 (en) | 1999-04-21 |
| CA2250788C true CA2250788C (en) | 2003-05-20 |
Family
ID=27179142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2250788 Expired - Fee Related CA2250788C (en) | 1997-10-21 | 1998-10-21 | Manufacturing process and structure of ink jet printhead |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP0930166B1 (en) |
| CA (1) | CA2250788C (en) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3562022A (en) * | 1967-12-26 | 1971-02-09 | Hughes Aircraft Co | Method of doping semiconductor bodies by indirection implantation |
| US4459739A (en) * | 1981-05-26 | 1984-07-17 | Northern Telecom Limited | Thin film transistors |
| US4535343A (en) * | 1983-10-31 | 1985-08-13 | Hewlett-Packard Company | Thermal ink jet printhead with self-passivating elements |
| JPH0486267A (en) * | 1990-07-31 | 1992-03-18 | Tdk Corp | Manufacture of heat generating element for thermal head |
| WO1992007968A1 (en) * | 1990-10-26 | 1992-05-14 | International Business Machines Corporation | STRUCTURE AND METHOD OF MAKING ALPHA-Ta IN THIN FILMS |
| US5340752A (en) * | 1992-10-23 | 1994-08-23 | Ncr Corporation | Method for forming a bipolar transistor using doped SOG |
| US5348909A (en) * | 1993-03-26 | 1994-09-20 | Lexmark International, Inc. | Manufacture of printhead with diamond resistors |
| JP3344072B2 (en) * | 1994-03-31 | 2002-11-11 | ソニー株式会社 | Method for manufacturing thin film transistor |
| EP0750990A3 (en) * | 1995-06-28 | 1998-04-01 | Canon Kabushiki Kaisha | Liquid ejecting printing head, production method thereof and production method for base body employed for liquid ejecting printing head |
| KR100203656B1 (en) * | 1996-04-09 | 1999-06-15 | 전주범 | Apparatus for encoding contour of images |
-
1998
- 1998-10-21 EP EP98250372A patent/EP0930166B1/en not_active Expired - Lifetime
- 1998-10-21 CA CA 2250788 patent/CA2250788C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0930166A3 (en) | 2000-04-12 |
| EP0930166A2 (en) | 1999-07-21 |
| EP0930166B1 (en) | 2005-02-23 |
| CA2250788A1 (en) | 1999-04-21 |
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