BRPI0608301A2 - multivariable control system with state feedback - Google Patents

multivariable control system with state feedback

Info

Publication number
BRPI0608301A2
BRPI0608301A2 BRPI0608301-3A BRPI0608301A BRPI0608301A2 BR PI0608301 A2 BRPI0608301 A2 BR PI0608301A2 BR PI0608301 A BRPI0608301 A BR PI0608301A BR PI0608301 A2 BRPI0608301 A2 BR PI0608301A2
Authority
BR
Brazil
Prior art keywords
control system
laser
multivariable control
state feedback
semiconductor laser
Prior art date
Application number
BRPI0608301-3A
Other languages
Portuguese (pt)
Inventor
Armando Montalvo
Albert Garden
Original Assignee
Sabeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sabeus Inc filed Critical Sabeus Inc
Publication of BRPI0608301A2 publication Critical patent/BRPI0608301A2/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/503—Laser transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/572—Wavelength control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06812—Stabilisation of laser output parameters by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Abstract

SISTEMA DE CONTROLE MULTIVARIáVEL COM REALIMENTAçãO NO ESTADO. A presente invenção refere-se a um sistema e o processo para controlar a saída de um laser de semicondutor . O sistema e o processo apresentados incluem o uso de equações não-lineares para calcular um modelo espacial de estado do laser em torno de um ponto operativo. Os algoritmos adaptativos são calculados e sinais de controle determinados usando um controlador para determinar as leis de controle apropriadas e funções de custo, que são então otimizados e usados para realimentação de um sinal de controle ao laser de semicondutor para melhorar o desempenho e estabilizar a saída do laser.MULTIVARIABLE CONTROL SYSTEM WITH STATE REHABILITATION. The present invention relates to a system and method for controlling the output of a semiconductor laser. The system and process presented include the use of nonlinear equations to calculate a spatial laser state model around an operating point. Adaptive algorithms are calculated and control signals determined using a controller to determine appropriate control laws and cost functions, which are then optimized and used for feedback of a semiconductor laser control signal to improve performance and stabilize output. Laser

BRPI0608301-3A 2005-03-09 2006-03-09 multivariable control system with state feedback BRPI0608301A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66042905P 2005-03-09 2005-03-09
PCT/US2006/008746 WO2006096865A2 (en) 2005-03-09 2006-03-09 Multivariable control system with state feedback

Publications (1)

Publication Number Publication Date
BRPI0608301A2 true BRPI0608301A2 (en) 2009-12-08

Family

ID=36954059

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0608301-3A BRPI0608301A2 (en) 2005-03-09 2006-03-09 multivariable control system with state feedback

Country Status (7)

Country Link
US (1) US20100172383A1 (en)
EP (1) EP1856775A4 (en)
JP (1) JP2008533724A (en)
BR (1) BRPI0608301A2 (en)
CA (1) CA2598952A1 (en)
MX (1) MX2007010807A (en)
WO (1) WO2006096865A2 (en)

Cited By (1)

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US20200295535A1 (en) * 2017-12-15 2020-09-17 Horiba, Ltd. Semiconductor laser device, and method and program for driving the same

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US9071344B2 (en) 2005-08-22 2015-06-30 Qualcomm Incorporated Reverse link interference cancellation
US8085824B2 (en) * 2007-05-31 2011-12-27 Finisar Corporation Optimization of laser parameters to achieve desired performance
JP4341708B2 (en) * 2007-08-13 2009-10-07 オムロン株式会社 Semiconductor laser driving device, semiconductor laser driving method, optical transmission device, optical wiring module, and electronic apparatus
US20100046660A1 (en) * 2008-05-13 2010-02-25 Qualcomm Incorporated Interference cancellation under non-stationary conditions
US8995417B2 (en) 2008-06-09 2015-03-31 Qualcomm Incorporated Increasing capacity in wireless communication
US9237515B2 (en) 2008-08-01 2016-01-12 Qualcomm Incorporated Successive detection and cancellation for cell pilot detection
US9277487B2 (en) 2008-08-01 2016-03-01 Qualcomm Incorporated Cell detection with interference cancellation
US9160577B2 (en) * 2009-04-30 2015-10-13 Qualcomm Incorporated Hybrid SAIC receiver
US8787509B2 (en) 2009-06-04 2014-07-22 Qualcomm Incorporated Iterative interference cancellation receiver
US8831149B2 (en) 2009-09-03 2014-09-09 Qualcomm Incorporated Symbol estimation methods and apparatuses
US9509452B2 (en) 2009-11-27 2016-11-29 Qualcomm Incorporated Increasing capacity in wireless communications
KR101363016B1 (en) 2009-11-27 2014-02-13 퀄컴 인코포레이티드 Increasing capacity in wireless communications
US9083148B2 (en) * 2012-01-11 2015-07-14 Kongsberg Seatex As Real time equivalent model, device and apparatus for control of master oscillator power amplifier laser
US9568317B2 (en) * 2013-01-31 2017-02-14 Honeywell International Inc. Fiber optic gyroscope mixed signal application specific integrated circuit
JP6647931B2 (en) * 2016-03-16 2020-02-14 株式会社Kelk Semiconductor wafer temperature control device and semiconductor wafer temperature control method

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200295535A1 (en) * 2017-12-15 2020-09-17 Horiba, Ltd. Semiconductor laser device, and method and program for driving the same
US11764542B2 (en) * 2017-12-15 2023-09-19 Horiba, Ltd. Semiconductor laser device, and method and program for driving the same

Also Published As

Publication number Publication date
WO2006096865A3 (en) 2007-04-12
EP1856775A4 (en) 2011-03-02
MX2007010807A (en) 2007-11-07
CA2598952A1 (en) 2006-09-14
JP2008533724A (en) 2008-08-21
US20100172383A1 (en) 2010-07-08
WO2006096865A2 (en) 2006-09-14
EP1856775A2 (en) 2007-11-21

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Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]