AU9011498A - Injection laser - Google Patents

Injection laser

Info

Publication number
AU9011498A
AU9011498A AU90114/98A AU9011498A AU9011498A AU 9011498 A AU9011498 A AU 9011498A AU 90114/98 A AU90114/98 A AU 90114/98A AU 9011498 A AU9011498 A AU 9011498A AU 9011498 A AU9011498 A AU 9011498A
Authority
AU
Australia
Prior art keywords
injection laser
laser
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU90114/98A
Inventor
Alexandr Ivanovich Bogatov
Alexandr Evgenievich Drakin
Jury Vladimirovich Kurnyavko
Vasily Ivanovich Shveikin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU9011498A publication Critical patent/AU9011498A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1089—Unstable resonators
AU90114/98A 1997-08-08 1998-08-06 Injection laser Abandoned AU9011498A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
RU97112914/25A RU2133534C1 (en) 1997-08-08 1997-08-08 Injection laser
RO97112914 1997-08-08
PCT/RU1998/000258 WO1999008352A1 (en) 1997-08-08 1998-08-06 Injection laser

Publications (1)

Publication Number Publication Date
AU9011498A true AU9011498A (en) 1999-03-01

Family

ID=20195753

Family Applications (1)

Application Number Title Priority Date Filing Date
AU90114/98A Abandoned AU9011498A (en) 1997-08-08 1998-08-06 Injection laser

Country Status (3)

Country Link
AU (1) AU9011498A (en)
RU (1) RU2133534C1 (en)
WO (1) WO1999008352A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2134007C1 (en) 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Semiconductor optical amplifier
RU2142665C1 (en) 1998-08-10 1999-12-10 Швейкин Василий Иванович Injection laser
RU2142661C1 (en) 1998-12-29 1999-12-10 Швейкин Василий Иванович Injection non-coherent light source
WO2003071643A1 (en) * 2002-02-18 2003-08-28 Ot´Kratoe Aktsyonernoe Obshchestvo ¨Sistema-Venchur¨ Heterostructure injection laser, semiconductor amplifying element and semiconductor optical amplifier
JP2006518548A (en) * 2003-02-19 2006-08-10 ピービーシー レーザーズ リミテッド Apparatus and method for frequency conversion
WO2007100341A2 (en) * 2005-04-29 2007-09-07 Massachusetts Institute Of Technology Grazing incidence slab semiconductor laser system and method
RU2539117C1 (en) * 2013-10-09 2015-01-10 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российский академии наук Semiconductor amplifier of optical emission

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063189A (en) * 1976-04-08 1977-12-13 Xerox Corporation Leaky wave diode laser
CA1137605A (en) * 1979-01-15 1982-12-14 Donald R. Scifres High output power laser
SU1359833A1 (en) * 1984-07-20 1987-12-15 Предприятие П/Я А-3726 Injection laser
FR2575870B1 (en) * 1985-01-10 1987-01-30 Sermage Bernard SEMICONDUCTOR LASER PROVIDED WITH MEANS FOR REJECTING THE SPONTANEOUS EMISSION INTO THE ACTIVE LAYER
US5101413A (en) * 1991-05-10 1992-03-31 Trw Inc. Large-aperture light sources using resonant leaky-wave coupling
US5537433A (en) * 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter

Also Published As

Publication number Publication date
WO1999008352A1 (en) 1999-02-18
RU2133534C1 (en) 1999-07-20

Similar Documents

Publication Publication Date Title
AU8333398A (en) Injection member
AU6949298A (en) Laser ignition
AU9804298A (en) Laser diode assembly
AU1463695A (en) Laser
AU6138898A (en) Cuttings injection system
AU1741399A (en) Laser light
AU1709299A (en) Mixer-injectors
AU6598798A (en) Resorcinyl-triazines
AU7595898A (en) Single mode laser
AU1027499A (en) 32P-polyphosphazene
AU1613197A (en) Injection aid
AU9066598A (en) Substituted 4-benzoyl-pyrazoles
AU5272198A (en) EMP-charge-eliminator
AU8109998A (en) Waveguide
AU1365499A (en) Pre-orienting nozzle
AU4117497A (en) Micropolarimeter
AU6185898A (en) Clavaspirins
AUPO796897A0 (en) Solid state uv laser
AU9011498A (en) Injection laser
AU6090898A (en) Substituted 4-benzoyl-pyrazoles
AU7960498A (en) Multi-media solid state laser
AU6014396A (en) Improved lasers
AU8875498A (en) Laser interferometer
AU4469997A (en) Heregulin-gamma
AU5391798A (en) Thiamacrolides

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase