AU6918300A - A nonvolatile memory device with a high work function floating-gate and method of fabrication - Google Patents

A nonvolatile memory device with a high work function floating-gate and method of fabrication

Info

Publication number
AU6918300A
AU6918300A AU69183/00A AU6918300A AU6918300A AU 6918300 A AU6918300 A AU 6918300A AU 69183/00 A AU69183/00 A AU 69183/00A AU 6918300 A AU6918300 A AU 6918300A AU 6918300 A AU6918300 A AU 6918300A
Authority
AU
Australia
Prior art keywords
fabrication
gate
memory device
nonvolatile memory
work function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU69183/00A
Inventor
Manzur Gill
Neal R. Mielke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of AU6918300A publication Critical patent/AU6918300A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
AU69183/00A 1999-09-24 2000-08-17 A nonvolatile memory device with a high work function floating-gate and method of fabrication Abandoned AU6918300A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40555399A 1999-09-24 1999-09-24
US09405553 1999-09-24
PCT/US2000/022784 WO2001024268A1 (en) 1999-09-24 2000-08-17 A nonvolatile memory device with a high work function floating-gate and method of fabrication

Publications (1)

Publication Number Publication Date
AU6918300A true AU6918300A (en) 2001-04-30

Family

ID=23604164

Family Applications (1)

Application Number Title Priority Date Filing Date
AU69183/00A Abandoned AU6918300A (en) 1999-09-24 2000-08-17 A nonvolatile memory device with a high work function floating-gate and method of fabrication

Country Status (3)

Country Link
AU (1) AU6918300A (en)
TW (1) TW474013B (en)
WO (1) WO2001024268A1 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7606066B2 (en) 2005-09-07 2009-10-20 Innovative Silicon Isi Sa Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7541240B2 (en) * 2005-10-18 2009-06-02 Sandisk Corporation Integration process flow for flash devices with low gap fill aspect ratio
WO2009031052A2 (en) 2007-03-29 2009-03-12 Innovative Silicon S.A. Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8189376B2 (en) * 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
WO2010102106A2 (en) 2009-03-04 2010-09-10 Innovative Silicon Isi Sa Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
CN102365628B (en) 2009-03-31 2015-05-20 美光科技公司 Techniques for providing a semiconductor memory device
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8576631B2 (en) 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
EP2548227B1 (en) 2010-03-15 2021-07-14 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
US8797800B1 (en) 2013-04-02 2014-08-05 Sandisk Technologies Inc. Select gate materials having different work functions in non-volatile memory
US8964473B2 (en) 2013-04-02 2015-02-24 Sandisk Technologies Inc. Select gate materials having different work functions in non-volatile memory

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2201028C3 (en) * 1971-01-15 1981-07-09 Intel Corp., Mountain View, Calif. Method for operating a field effect transistor and field effect transistor for carrying out this method
KR920005242A (en) * 1990-08-20 1992-03-28 김광호 Method of manufacturing transistor having structure of gate-insulator-semiconductor
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction
KR100303061B1 (en) * 1993-10-15 2001-11-22 이데이 노부유끼 Nonvolatile memory device and manufacturing method thereof
US5511020A (en) * 1993-11-23 1996-04-23 Monolithic System Technology, Inc. Pseudo-nonvolatile memory incorporating data refresh operation
JPH09129757A (en) * 1995-10-27 1997-05-16 Nkk Corp Non-volatile semiconductor memory device and manufacture thereof
JPH10256400A (en) * 1997-03-10 1998-09-25 Mitsubishi Electric Corp Non-volatile semiconductor memory
TW432636B (en) * 1997-09-26 2001-05-01 Thunderbird Tech Inc Metal gate fermi-threshold field effect transistor

Also Published As

Publication number Publication date
WO2001024268A1 (en) 2001-04-05
TW474013B (en) 2002-01-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase