AU4059800A - Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth - Google Patents

Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth

Info

Publication number
AU4059800A
AU4059800A AU40598/00A AU4059800A AU4059800A AU 4059800 A AU4059800 A AU 4059800A AU 40598/00 A AU40598/00 A AU 40598/00A AU 4059800 A AU4059800 A AU 4059800A AU 4059800 A AU4059800 A AU 4059800A
Authority
AU
Australia
Prior art keywords
deposit
isolation process
fill oxide
trench
oxide prior
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU40598/00A
Inventor
Todd O. Curtis
Kerem Kapkin
Vivek Rao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Valley Group Thermal Systems LLC
Original Assignee
Silicon Valley Group Thermal Systems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Valley Group Thermal Systems LLC filed Critical Silicon Valley Group Thermal Systems LLC
Publication of AU4059800A publication Critical patent/AU4059800A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
AU40598/00A 1999-04-02 2000-03-31 Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth Abandoned AU4059800A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12752099P 1999-04-02 1999-04-02
US60127520 1999-04-02
PCT/US2000/008650 WO2000060659A1 (en) 1999-04-02 2000-03-31 Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth

Publications (1)

Publication Number Publication Date
AU4059800A true AU4059800A (en) 2000-10-23

Family

ID=22430554

Family Applications (1)

Application Number Title Priority Date Filing Date
AU40598/00A Abandoned AU4059800A (en) 1999-04-02 2000-03-31 Improved trench isolation process to deposit a trench fill oxide prior to sidewall liner oxidation growth

Country Status (10)

Country Link
US (1) US6387764B1 (en)
EP (1) EP1181718A4 (en)
JP (1) JP2002541664A (en)
KR (1) KR100424705B1 (en)
CN (1) CN1174477C (en)
AU (1) AU4059800A (en)
CA (1) CA2364975A1 (en)
IL (1) IL145608A0 (en)
TW (1) TW578265B (en)
WO (1) WO2000060659A1 (en)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU720866B2 (en) 1996-03-15 2000-06-15 Rovi Guides, Inc. Combination of VCR index and EPG
CN1867068A (en) 1998-07-14 2006-11-22 联合视频制品公司 Client-server based interactive television program guide system with remote server recording
TW465235B (en) 1998-09-17 2001-11-21 United Video Properties Inc Electronic program guide with digital storage
US6273951B1 (en) 1999-06-16 2001-08-14 Micron Technology, Inc. Precursor mixtures for use in preparing layers on substrates
US6825087B1 (en) * 1999-11-24 2004-11-30 Fairchild Semiconductor Corporation Hydrogen anneal for creating an enhanced trench for trench MOSFETS
AR028004A1 (en) 2000-04-10 2003-04-23 United Video Properties Inc PROVISIONS OF INTERACTIVE TELEVISION PROGRAMMING GUIDE WITH INTEGRATED PROGRAM LISTS
US6368986B1 (en) * 2000-08-31 2002-04-09 Micron Technology, Inc. Use of selective ozone TEOS oxide to create variable thickness layers and spacers
US6503851B2 (en) * 2000-08-31 2003-01-07 Micron Technology, Inc. Use of linear injectors to deposit uniform selective ozone TEOS oxide film by pulsing reactants on and off
CN101715109A (en) 2000-10-11 2010-05-26 联合视频制品公司 Systems and methods for providing storage of data on servers in an on-demand media delivery system
DE10056261A1 (en) * 2000-11-14 2002-05-29 Infineon Technologies Ag Method for producing an integrated semiconductor component
JP2002246430A (en) * 2001-02-21 2002-08-30 Hitachi Ltd Semiconductor device manufacturing method
WO2002101818A2 (en) * 2001-06-08 2002-12-19 Amberwave Systems Corporation Method for isolating semiconductor devices
TW522510B (en) * 2001-07-25 2003-03-01 Macronix Int Co Ltd Method for reducing stress and encroachment of sidewall oxide layer of shallow trench isolation
JP3886424B2 (en) * 2001-08-28 2007-02-28 鹿児島日本電気株式会社 Substrate processing apparatus and method
KR20030038396A (en) * 2001-11-01 2003-05-16 에이에스엠엘 유에스, 인코포레이티드 System and method for preferential chemical vapor deposition
US20030194871A1 (en) * 2002-04-15 2003-10-16 Macronix International Co., Ltd. Method of stress and damage elimination during formation of isolation device
KR100464852B1 (en) * 2002-08-07 2005-01-05 삼성전자주식회사 Method of forming gate oxide layer in semiconductor device
US6825097B2 (en) 2002-08-07 2004-11-30 International Business Machines Corporation Triple oxide fill for trench isolation
US6794284B2 (en) * 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US6730164B2 (en) * 2002-08-28 2004-05-04 Micron Technology, Inc. Systems and methods for forming strontium- and/or barium-containing layers
US8617312B2 (en) * 2002-08-28 2013-12-31 Micron Technology, Inc. Systems and methods for forming layers that contain niobium and/or tantalum
US6967159B2 (en) * 2002-08-28 2005-11-22 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using organic amines
US6995081B2 (en) * 2002-08-28 2006-02-07 Micron Technology, Inc. Systems and methods for forming tantalum silicide layers
US7493646B2 (en) 2003-01-30 2009-02-17 United Video Properties, Inc. Interactive television systems with digital video recording and adjustable reminders
CN100437970C (en) * 2003-03-07 2008-11-26 琥珀波系统公司 Shallow trench isolation process
DE10314574B4 (en) * 2003-03-31 2007-06-28 Infineon Technologies Ag Method for producing a trench isolation structure
US7115528B2 (en) * 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
KR100477810B1 (en) * 2003-06-30 2005-03-21 주식회사 하이닉스반도체 Fabricating method of semiconductor device adopting nf3 high density plasma oxide layer
JP4086054B2 (en) * 2004-06-22 2008-05-14 東京エレクトロン株式会社 Process for oxidizing object, oxidation apparatus and storage medium
US20060003546A1 (en) * 2004-06-30 2006-01-05 Andreas Klipp Gap-filling for isolation
CN1324689C (en) * 2004-10-26 2007-07-04 中芯国际集成电路制造(上海)有限公司 Novel pretreatment method for alumina atom illuvium
CN101003895B (en) * 2006-01-16 2011-10-19 中微半导体设备(上海)有限公司 Device for delivering reactant to substrate, and process method
CN101079391B (en) * 2006-05-26 2012-01-25 中芯国际集成电路制造(上海)有限公司 Method for semiconductor part with high clearance filling capability
KR100806799B1 (en) * 2006-09-18 2008-02-27 동부일렉트로닉스 주식회사 Method of manufacturing image sensor
US8092860B2 (en) * 2007-03-13 2012-01-10 E. I. Du Pont De Nemours And Company Topographically selective oxidation
US8530247B2 (en) * 2007-12-28 2013-09-10 Texas Instruments Incorporated Control of implant pattern critical dimensions using STI step height offset
US20110084356A1 (en) * 2008-06-02 2011-04-14 Nxp B.V. Local buried layer forming method and semiconductor device having such a layer
US20090325391A1 (en) * 2008-06-30 2009-12-31 Asm International Nv Ozone and teos process for silicon oxide deposition
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
US8895446B2 (en) 2013-02-18 2014-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. Fin deformation modulation
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
CN111095513B (en) 2017-08-18 2023-10-31 应用材料公司 High-pressure high-temperature annealing chamber
JP7274461B2 (en) 2017-09-12 2023-05-16 アプライド マテリアルズ インコーポレイテッド Apparatus and method for manufacturing semiconductor structures using protective barrier layers
CN117936420A (en) 2017-11-11 2024-04-26 微材料有限责任公司 Gas delivery system for high pressure processing chamber
JP2021503714A (en) 2017-11-17 2021-02-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Capacitor system for high pressure processing system
KR20230079236A (en) 2018-03-09 2023-06-05 어플라이드 머티어리얼스, 인코포레이티드 High pressure annealing process for metal containing materials
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
JP2022507390A (en) * 2018-11-16 2022-01-18 アプライド マテリアルズ インコーポレイテッド Membrane deposition using enhanced diffusion process
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
US11616062B2 (en) 2020-04-30 2023-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Gate isolation for multigate device
US11637042B2 (en) 2020-04-30 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd Self-aligned metal gate for multigate device
US11637102B2 (en) 2020-05-29 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Gate isolation for multigate device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW389999B (en) * 1995-11-21 2000-05-11 Toshiba Corp Substrate having shallow trench isolation and method of manufacturing the same
US5933748A (en) 1996-01-22 1999-08-03 United Microelectronics Corp. Shallow trench isolation process
DE19629766C2 (en) * 1996-07-23 2002-06-27 Infineon Technologies Ag Manufacturing method of shallow trench isolation areas in a substrate
US5817566A (en) * 1997-03-03 1998-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Trench filling method employing oxygen densified gap filling silicon oxide layer formed with low ozone concentration
TW321783B (en) * 1997-03-17 1997-12-01 Taiwan Semiconductor Mfg Application of selective etchback and chemical mechanical polishing on planarization of shallow trench isolation
US5926722A (en) * 1997-04-07 1999-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Planarization of shallow trench isolation by differential etchback and chemical mechanical polishing
US5786262A (en) * 1997-04-09 1998-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Self-planarized gapfilling for shallow trench isolation
JPH10289946A (en) * 1997-04-14 1998-10-27 Toshiba Corp Manufacture of semiconductor device
US5741740A (en) * 1997-06-12 1998-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Shallow trench isolation (STI) method employing gap filling silicon oxide dielectric layer
TW353797B (en) * 1997-12-27 1999-03-01 United Microelectronics Corp Method of shallow trench isolation
JPH11274287A (en) * 1998-03-24 1999-10-08 Sharp Corp Method of forming element isolating region
EP0959496B1 (en) * 1998-05-22 2006-07-19 Applied Materials, Inc. Methods for forming self-planarized dielectric layer for shallow trench isolation
US6008095A (en) 1998-08-07 1999-12-28 Advanced Micro Devices, Inc. Process for formation of isolation trenches with high-K gate dielectrics
US5960299A (en) 1998-10-28 1999-09-28 United Microelectronics Corp. Method of fabricating a shallow-trench isolation structure in integrated circuit
US6197658B1 (en) * 1998-10-30 2001-03-06 Taiwan Semiconductor Manufacturing Company Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity
US6100163A (en) * 1999-01-07 2000-08-08 Taiwan Semiconductor Manufacturing Company Gap filling of shallow trench isolation by ozone-tetraethoxysilane

Also Published As

Publication number Publication date
KR100424705B1 (en) 2004-03-27
TW578265B (en) 2004-03-01
WO2000060659A9 (en) 2002-06-06
CN1174477C (en) 2004-11-03
IL145608A0 (en) 2002-06-30
KR20020007353A (en) 2002-01-26
EP1181718A1 (en) 2002-02-27
JP2002541664A (en) 2002-12-03
CN1351762A (en) 2002-05-29
EP1181718A4 (en) 2005-03-30
US6387764B1 (en) 2002-05-14
CA2364975A1 (en) 2000-10-12
WO2000060659A1 (en) 2000-10-12

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase