AU2936700A - Apparatus for growing single crystals - Google Patents

Apparatus for growing single crystals

Info

Publication number
AU2936700A
AU2936700A AU29367/00A AU2936700A AU2936700A AU 2936700 A AU2936700 A AU 2936700A AU 29367/00 A AU29367/00 A AU 29367/00A AU 2936700 A AU2936700 A AU 2936700A AU 2936700 A AU2936700 A AU 2936700A
Authority
AU
Australia
Prior art keywords
single crystals
growing single
growing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU29367/00A
Inventor
Herman Branover
Yuri Gelfgat
Shaul Lesin
Mark Tsirlin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SOLMECS (ISRAEL) Ltd
Original Assignee
Solmecs Israel Ltd
SOLMECS (ISRAEL) Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solmecs Israel Ltd, SOLMECS (ISRAEL) Ltd filed Critical Solmecs Israel Ltd
Publication of AU2936700A publication Critical patent/AU2936700A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
AU29367/00A 1999-03-04 2000-02-28 Apparatus for growing single crystals Abandoned AU2936700A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IL12882799A IL128827A0 (en) 1999-03-04 1999-03-04 Apparatus for growing single crystals
IL128827 1999-03-04
PCT/IL2000/000120 WO2000052233A1 (en) 1999-03-04 2000-02-28 Apparatus for growing single crystals

Publications (1)

Publication Number Publication Date
AU2936700A true AU2936700A (en) 2000-09-21

Family

ID=11072559

Family Applications (1)

Application Number Title Priority Date Filing Date
AU29367/00A Abandoned AU2936700A (en) 1999-03-04 2000-02-28 Apparatus for growing single crystals

Country Status (4)

Country Link
KR (1) KR20010113724A (en)
AU (1) AU2936700A (en)
IL (1) IL128827A0 (en)
WO (1) WO2000052233A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200446667Y1 (en) * 2008-12-29 2009-11-19 주식회사수성기술 Apparatus of fabricating silicon ingot for solar cell
CN113502546B (en) * 2021-07-06 2022-08-19 中国电子科技集团公司第十三研究所 Method for synthesizing and continuously growing phosphide in magnetic field

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE562704A (en) * 1956-11-28
JPS61266389A (en) * 1985-05-21 1986-11-26 Sumitomo Electric Ind Ltd Double crucible for making impurity in crystal uniform
US4822449A (en) * 1987-06-10 1989-04-18 Massachusetts Institute Of Technology Heat transfer control during crystal growth
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
US4963334A (en) * 1989-08-14 1990-10-16 The United States Of America As Represented By The Secretary Of The Air Force High temperature heat pipe coracle and process
JPH0825836B2 (en) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 Silicon single crystal manufacturing equipment

Also Published As

Publication number Publication date
KR20010113724A (en) 2001-12-28
IL128827A0 (en) 2000-01-31
WO2000052233A1 (en) 2000-09-08

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase