AU2003257618A1 - Method of etching and etching apparatus - Google Patents

Method of etching and etching apparatus

Info

Publication number
AU2003257618A1
AU2003257618A1 AU2003257618A AU2003257618A AU2003257618A1 AU 2003257618 A1 AU2003257618 A1 AU 2003257618A1 AU 2003257618 A AU2003257618 A AU 2003257618A AU 2003257618 A AU2003257618 A AU 2003257618A AU 2003257618 A1 AU2003257618 A1 AU 2003257618A1
Authority
AU
Australia
Prior art keywords
etching
etching apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003257618A
Inventor
Hiroshi Shinriki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003257618A1 publication Critical patent/AU2003257618A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
AU2003257618A 2002-08-30 2003-08-20 Method of etching and etching apparatus Abandoned AU2003257618A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002252274A JP2004091829A (en) 2002-08-30 2002-08-30 Etching method and etching apparatus
JP2002/252274 2002-08-30
PCT/JP2003/010505 WO2004021425A1 (en) 2002-08-30 2003-08-20 Method of etching and etching apparatus

Publications (1)

Publication Number Publication Date
AU2003257618A1 true AU2003257618A1 (en) 2004-03-19

Family

ID=31972732

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003257618A Abandoned AU2003257618A1 (en) 2002-08-30 2003-08-20 Method of etching and etching apparatus

Country Status (3)

Country Link
JP (1) JP2004091829A (en)
AU (1) AU2003257618A1 (en)
WO (1) WO2004021425A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4489541B2 (en) * 2004-09-07 2010-06-23 セントラル硝子株式会社 Method for cleaning hafnium-containing oxides
US7771563B2 (en) * 2004-11-18 2010-08-10 Sumitomo Precision Products Co., Ltd. Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical-systems
JP4886565B2 (en) * 2007-03-26 2012-02-29 住友精密工業株式会社 Substrate processing equipment
JPWO2009038168A1 (en) * 2007-09-21 2011-01-06 東京エレクトロン株式会社 Film forming apparatus and film forming method
JP5997555B2 (en) * 2012-09-14 2016-09-28 東京エレクトロン株式会社 Etching apparatus and etching method
JP6142676B2 (en) * 2013-05-31 2017-06-07 セントラル硝子株式会社 Dry etching method, dry etching apparatus, metal film and device including the same
JP6529371B2 (en) * 2015-07-27 2019-06-12 東京エレクトロン株式会社 Etching method and etching apparatus
WO2018128079A1 (en) 2017-01-04 2018-07-12 セントラル硝子株式会社 DRY ETCHING METHOD AND β-DIKETONE-FILLED CONTAINER
WO2018128078A1 (en) 2017-01-04 2018-07-12 セントラル硝子株式会社 Etching method and etching device
JP6980406B2 (en) * 2017-04-25 2021-12-15 株式会社日立ハイテク Semiconductor manufacturing equipment and methods for manufacturing semiconductor equipment
JP6936700B2 (en) * 2017-10-31 2021-09-22 株式会社日立ハイテク Semiconductor manufacturing equipment and manufacturing method of semiconductor equipment
CN113498547A (en) 2019-03-01 2021-10-12 中央硝子株式会社 Dry etching method, method for manufacturing semiconductor device, and etching apparatus
JP7338355B2 (en) * 2019-09-20 2023-09-05 東京エレクトロン株式会社 Etching method and etching apparatus
CN114616651A (en) 2019-10-23 2022-06-10 中央硝子株式会社 Dry etching method, method for manufacturing semiconductor device, and etching apparatus
WO2021192210A1 (en) * 2020-03-27 2021-09-30 株式会社日立ハイテク Method for producing semiconductor
KR20230057348A (en) * 2020-09-01 2023-04-28 가부시키가이샤 아데카 etching method
EP4307346A1 (en) 2021-04-28 2024-01-17 Central Glass Company, Limited Surface treatment method, dry etching method, cleaning method, semiconductor device manufacturing method, and etching device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062902A (en) * 1990-03-30 1991-11-05 Air Products And Chemicals, Inc. Fluxing agents comprising β-diketone and β-ketoimine ligands and a process for using the same
JP3115715B2 (en) * 1992-11-12 2000-12-11 三菱電機株式会社 Method for etching multi-component oxide film having high dielectric constant, method for etching high-melting-point metal-containing film, and method for manufacturing thin-film capacitor element
TW468212B (en) * 1999-10-25 2001-12-11 Motorola Inc Method for fabricating a semiconductor structure including a metal oxide interface with silicon

Also Published As

Publication number Publication date
JP2004091829A (en) 2004-03-25
WO2004021425A1 (en) 2004-03-11

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase