AU2002216611A1 - A theory of the charge multiplication process in avalanche photodiodes - Google Patents
A theory of the charge multiplication process in avalanche photodiodesInfo
- Publication number
- AU2002216611A1 AU2002216611A1 AU2002216611A AU1661102A AU2002216611A1 AU 2002216611 A1 AU2002216611 A1 AU 2002216611A1 AU 2002216611 A AU2002216611 A AU 2002216611A AU 1661102 A AU1661102 A AU 1661102A AU 2002216611 A1 AU2002216611 A1 AU 2002216611A1
- Authority
- AU
- Australia
- Prior art keywords
- theory
- avalanche photodiodes
- multiplication process
- charge multiplication
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23695200P | 2000-09-29 | 2000-09-29 | |
US60/236,952 | 2000-09-29 | ||
PCT/US2001/030775 WO2002027805A2 (en) | 2000-09-29 | 2001-10-01 | A theory of the charge multiplication process in avalanche photodiodes |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002216611A1 true AU2002216611A1 (en) | 2002-04-08 |
Family
ID=22891704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002216611A Abandoned AU2002216611A1 (en) | 2000-09-29 | 2001-10-01 | A theory of the charge multiplication process in avalanche photodiodes |
Country Status (3)
Country | Link |
---|---|
US (1) | US7045833B2 (en) |
AU (1) | AU2002216611A1 (en) |
WO (1) | WO2002027805A2 (en) |
Families Citing this family (76)
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US6894322B2 (en) * | 2002-02-11 | 2005-05-17 | Jds Uniphase Corporation | Back illuminated photodiodes |
US6952042B2 (en) * | 2002-06-17 | 2005-10-04 | Honeywell International, Inc. | Microelectromechanical device with integrated conductive shield |
US6747296B1 (en) * | 2002-06-18 | 2004-06-08 | Solid State Scientific Corporation | Avalanche photodiode multiplication region and avalanche photodiode with low impact ionization rate ratio |
KR100463416B1 (en) * | 2002-09-05 | 2004-12-23 | 한국전자통신연구원 | Avalanche phototransistor |
TW564476B (en) * | 2002-10-21 | 2003-12-01 | Univ Chung Yuan Christian | Method for fabricating a monolithic chip including pH, temperature and photo intensity multi-sensors and a readout circuit |
US7271405B2 (en) * | 2003-10-14 | 2007-09-18 | Stc.Unm | Intersubband detector with avalanche multiplier region |
FR2879818B1 (en) * | 2004-12-17 | 2007-04-20 | Commissariat Energie Atomique | SEMICONDUCTOR PHOTODETECTOR, MULTI-SPECTRAL DETECTION DEVICE FOR ELECTROMAGNETIC RADIATION USING SUCH PHOTODETECTOR, AND METHOD FOR IMPLEMENTING SUCH A DEVICE |
US7326970B2 (en) * | 2005-03-11 | 2008-02-05 | The Boeing Company | Metamorphic avalanche photodetector |
US7612340B2 (en) | 2005-08-03 | 2009-11-03 | Drs Sensors & Targeting Systems, Inc. | Method of operating an avalanche photodiode for reducing gain normalized dark current |
US7553734B2 (en) * | 2005-10-17 | 2009-06-30 | Princeton Lightwave, Inc. | Method for forming an avalanche photodiode |
US7378689B2 (en) * | 2005-10-17 | 2008-05-27 | Princeton Lightwave, Inc. | Apparatus comprising an avalanche photodiode |
DE102005051571B4 (en) * | 2005-10-21 | 2013-06-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photodiode chip high cutoff frequency |
WO2007064643A2 (en) * | 2005-12-01 | 2007-06-07 | Zygo Corporation | Data age compensation with avalanche photodiode |
US7811913B2 (en) * | 2005-12-19 | 2010-10-12 | Sharp Laboratories Of America, Inc. | Method of fabricating a low, dark-current germanium-on-silicon pin photo detector |
US7626193B2 (en) * | 2006-03-27 | 2009-12-01 | Princeton Lightwave, Inc. | Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor |
US7446297B1 (en) * | 2006-06-06 | 2008-11-04 | Storage Technology Corporation | Sensor and method for providing high transfer rate in page-based optical data storage |
WO2008011152A2 (en) * | 2006-07-21 | 2008-01-24 | University Of Massachusetts | Longwave infrared photodetector |
US8595654B1 (en) * | 2006-10-03 | 2013-11-26 | Hrl Laboratories, Llc | Semiconductor device coding using quantum dot technology |
US7751655B2 (en) * | 2007-07-27 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Micro-ring optical detector/modulator |
EP2040307B1 (en) | 2007-09-20 | 2013-08-07 | Alcatel Lucent | A photodetector for an optical device |
US8239176B2 (en) * | 2008-02-13 | 2012-08-07 | Feng Ma | Simulation methods and systems for carriers having multiplications |
TW201001736A (en) * | 2008-06-19 | 2010-01-01 | Univ Nat Central | A high-speed avalanche photodiode |
EP2166579B1 (en) * | 2008-09-18 | 2016-05-04 | Alcatel Lucent | Photonic power switch and method of controlling current flow in the photonic power switch and use of such photonic power switch |
US8304783B2 (en) * | 2009-06-03 | 2012-11-06 | Cree, Inc. | Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same |
US8409908B2 (en) * | 2009-07-30 | 2013-04-02 | General Electric Company | Apparatus for reducing photodiode thermal gain coefficient and method of making same |
JP5364526B2 (en) * | 2009-10-02 | 2013-12-11 | 三菱重工業株式会社 | Infrared detector, infrared detector, and method of manufacturing infrared detector |
US20120199932A1 (en) * | 2009-10-12 | 2012-08-09 | The Regents Of The University Of California | Low noise, stable avalanche photodiode |
US20110284926A1 (en) * | 2010-05-18 | 2011-11-24 | Agency For Science, Technology And Research | Avalanche photodiode structure |
US8330171B2 (en) * | 2010-07-23 | 2012-12-11 | Intel Corporation | High speed, wide optical bandwidth, and high efficiency resonant cavity enhanced photo-detector |
KR102069891B1 (en) * | 2011-08-31 | 2020-01-28 | 삼성전자주식회사 | photoelectric conversion device |
US9466747B1 (en) * | 2011-10-25 | 2016-10-11 | Radiation Monitoring Devices, Inc. | Avalanche photodiode and methods of forming the same |
US9123539B2 (en) * | 2012-01-13 | 2015-09-01 | Sumitomo Electric Industries, Ltd. | Method for manufacturing optical semiconductor device |
US10128397B1 (en) * | 2012-05-21 | 2018-11-13 | The Boeing Company | Low excess noise, high gain avalanche photodiodes |
US9640676B2 (en) * | 2012-06-29 | 2017-05-02 | Sunpower Corporation | Methods and structures for improving the structural integrity of solar cells |
TWI455354B (en) * | 2012-07-05 | 2014-10-01 | Univ Nat Central | Homogeneous junction type of high speed photodiode |
US9389273B2 (en) | 2012-11-13 | 2016-07-12 | International Business Machines Corporation | Solar cell characteristics determination |
US9362428B2 (en) | 2012-11-27 | 2016-06-07 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
US10916669B2 (en) | 2012-12-10 | 2021-02-09 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
US10388806B2 (en) | 2012-12-10 | 2019-08-20 | Artilux, Inc. | Photonic lock based high bandwidth photodetector |
FR3000608B1 (en) | 2012-12-31 | 2015-03-06 | Commissariat Energie Atomique | SEMICONDUCTOR STRUCTURE OF THE AVALANCHE PHOTODIODE TYPE AND PROCESS FOR PRODUCING SUCH A STRUCTURE |
JP2014222824A (en) * | 2013-05-13 | 2014-11-27 | 住友電工デバイス・イノベーション株式会社 | Method for identifying light signal wavelength and control method for optical transceiver |
TW201504599A (en) * | 2013-05-30 | 2015-02-01 | Univ California | Polarization independent photodetector with high contrast grating and two dimensional period structure that can be used as dual usage HCG VCSEL-detector |
US9520514B2 (en) * | 2013-06-11 | 2016-12-13 | National Taiwan University | Quantum dot infrared photodetector |
TWI656651B (en) | 2014-02-05 | 2019-04-11 | 美商太陽光電公司 | Monolithic multijunction power converter |
US9748430B2 (en) | 2015-06-18 | 2017-08-29 | Board Of Regents, The University Of Texas System | Staircase avalanche photodiode with a staircase multiplication region composed of an AIInAsSb alloy |
JP2018518848A (en) * | 2015-06-22 | 2018-07-12 | アイキューイー ピーエルシーIQE plc | Photoelectron detector with a dilute nitride layer on a substrate with a lattice parameter that closely matches GaAs. |
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US10644187B2 (en) | 2015-07-24 | 2020-05-05 | Artilux, Inc. | Multi-wafer based light absorption apparatus and applications thereof |
US10381502B2 (en) * | 2015-09-09 | 2019-08-13 | Teledyne Scientific & Imaging, Llc | Multicolor imaging device using avalanche photodiode |
US9992477B2 (en) | 2015-09-24 | 2018-06-05 | Ouster, Inc. | Optical system for collecting distance information within a field |
US10063849B2 (en) | 2015-09-24 | 2018-08-28 | Ouster, Inc. | Optical system for collecting distance information within a field |
US10686091B2 (en) * | 2016-02-12 | 2020-06-16 | Lg Innotek Co., Ltd. | Semiconductor device |
US10032950B2 (en) | 2016-02-22 | 2018-07-24 | University Of Virginia Patent Foundation | AllnAsSb avalanche photodiode and related method thereof |
WO2018031093A2 (en) * | 2016-05-23 | 2018-02-15 | Massachusetts Institute Of Technology | Photodiode array structure for cross talk suppression |
CN109843500B (en) | 2016-08-24 | 2021-06-29 | 奥斯特公司 | Optical system for collecting distance information within a field |
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US10930808B2 (en) | 2017-07-06 | 2021-02-23 | Array Photonics, Inc. | Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells |
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US11029406B2 (en) | 2018-04-06 | 2021-06-08 | Luminar, Llc | Lidar system with AlInAsSb avalanche photodiode |
CN112335059B (en) * | 2018-07-11 | 2022-06-17 | 斯坦福国际研究院 | Linear mode avalanche photodiode without excessive noise |
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DE102020105353A1 (en) | 2020-02-28 | 2021-09-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Method and photodiode device for the coherent detection of an optical signal |
KR20210137811A (en) | 2020-05-11 | 2021-11-18 | 삼성전자주식회사 | Sensor and electronic device |
RU2769749C1 (en) * | 2021-04-16 | 2022-04-05 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) | Avalanche photodiode and method for its manufacture |
US11721780B2 (en) * | 2021-11-17 | 2023-08-08 | Globalfoundries U.S. Inc. | Avalanche photodetectors with a multiple-thickness charge sheet |
CN114362710B (en) * | 2021-12-03 | 2024-03-29 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave resonator |
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JPS5861679A (en) * | 1981-10-07 | 1983-04-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | Avalanche photo diode with quantum well |
US4839706A (en) * | 1986-08-07 | 1989-06-13 | Polaroid Corporation | Avalanche photodetector |
JPH0821727B2 (en) * | 1988-11-18 | 1996-03-04 | 日本電気株式会社 | Avalanche photodiode |
US5204871A (en) * | 1990-03-29 | 1993-04-20 | Larkins Eric C | Bistable optical laser based on a heterostructure pnpn thyristor |
JP2941349B2 (en) * | 1990-04-06 | 1999-08-25 | 株式会社日立製作所 | Super lattice APD |
JP2937404B2 (en) * | 1990-04-18 | 1999-08-23 | 日本電気株式会社 | Semiconductor light receiving element |
JPH04125977A (en) * | 1990-09-17 | 1992-04-27 | Nec Corp | Heteromultiple structure avalanche photodiode |
EP0495414B1 (en) * | 1991-01-11 | 1997-10-15 | Canon Kabushiki Kaisha | Photoelectric converting device and image processing apparatus utilizing the same |
US5204539A (en) * | 1991-01-28 | 1993-04-20 | Nec Corporation | Avalanche photodiode with hetero-periodical structure |
JP2998375B2 (en) * | 1991-12-20 | 2000-01-11 | 日本電気株式会社 | Avalanche photodiode |
KR960001467B1 (en) * | 1992-12-22 | 1996-01-30 | 한국 전기통신공사 | Avalanche photo diode having super lattice structure |
JP2845081B2 (en) * | 1993-04-07 | 1999-01-13 | 日本電気株式会社 | Semiconductor light receiving element |
JP2699807B2 (en) * | 1993-06-08 | 1998-01-19 | 日本電気株式会社 | Compositionally modulated avalanche photodiode |
DE69631098D1 (en) * | 1995-08-03 | 2004-01-29 | Hitachi Europ Ltd | Semiconductor structures |
JPH09237913A (en) * | 1995-12-28 | 1997-09-09 | Fuji Xerox Co Ltd | Semiconductor photosensitive element and its manufacture |
-
2001
- 2001-10-01 AU AU2002216611A patent/AU2002216611A1/en not_active Abandoned
- 2001-10-01 US US09/969,133 patent/US7045833B2/en not_active Expired - Fee Related
- 2001-10-01 WO PCT/US2001/030775 patent/WO2002027805A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2002027805A3 (en) | 2003-01-16 |
US7045833B2 (en) | 2006-05-16 |
WO2002027805A2 (en) | 2002-04-04 |
US20030047752A1 (en) | 2003-03-13 |
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