AU2001289080A1 - Highly efficient capacitor structures with enhanced matching properties - Google Patents

Highly efficient capacitor structures with enhanced matching properties

Info

Publication number
AU2001289080A1
AU2001289080A1 AU2001289080A AU8908001A AU2001289080A1 AU 2001289080 A1 AU2001289080 A1 AU 2001289080A1 AU 2001289080 A AU2001289080 A AU 2001289080A AU 8908001 A AU8908001 A AU 8908001A AU 2001289080 A1 AU2001289080 A1 AU 2001289080A1
Authority
AU
Australia
Prior art keywords
vertical plates
vertical
capacitor structure
terminal
vias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001289080A
Inventor
Roberto Aparicio
Seyed-Ali Hajimiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
California Institute of Technology CalTech
Original Assignee
California Institute of Technology CalTech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Institute of Technology CalTech filed Critical California Institute of Technology CalTech
Publication of AU2001289080A1 publication Critical patent/AU2001289080A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Discharge Lamp (AREA)

Abstract

The present specification discloses highly efficient capacitor structures. One embodiment of the present invention is referred to herein as a vertical parallel plate (VPP) structure. In accordance with this embodiment, a capacitor structure comprises a plurality of vertical plates. The vertical plates are substantially parallel to each other, and each vertical plate comprises multiple conducting strips. These conducting strips are substantially parallel to each other and are connected to each other by one or more vias. The vertical plates are alternately connected to each other, creating a first portion of the vertical plates and a second portion of the vertical plates, such that the first portion of the vertical plates forms a first terminal of the capacitor structure, and the second portion of the vertical plates forms a second terminal of the capacitor structure. Either slotted vias or individual vias can be used to connect the conducting strips. Another embodiment of the present invention is referred to herein as a vertical bars (VB) structure. In accordance with this embodiment of the present invention, a capacitor structure comprises a plurality of rows of vertical bars, wherein within each row, the vertical bars are parallel to each other, and each vertical bar comprises multiple conducting patches. These conducting patches are connected to each other by one or more vias. The rows of vertical bars form a first direction and a second direction, wherein the second direction is orthogonal to the first direction. In the first direction, the vertical bars are alternately connected to each other, creating a first portion of the vertical plates and a second portion of the vertical plates. The first portion of the vertical plates forms a section of the first terminal of the capacitor structure, and the second portion of the vertical plates forms a section of the second terminal of the capacitor structure. In the second direction, the vertical bars are alternately connected to each other, creating a third portion of the vertical plates and a fourth portion of the vertical plates. The third portion of the vertical plates forms a remaining section of the first terminal of the capacitor structure, and the fourth portion of the vertical plates forms a remaining section of the second terminal of the capacitor structure. Either slotted vias or individual vias can be used to connect the conducting strips.
AU2001289080A 2000-09-14 2001-09-14 Highly efficient capacitor structures with enhanced matching properties Abandoned AU2001289080A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23265100P 2000-09-14 2000-09-14
US60/232,651 2000-09-14
US09/927,761 US6690570B2 (en) 2000-09-14 2001-08-09 Highly efficient capacitor structures with enhanced matching properties
US09/927,761 2001-08-09
PCT/US2001/028693 WO2002027770A2 (en) 2000-09-14 2001-09-14 Highly efficient capacitor structures with enhanced matching properties

Publications (1)

Publication Number Publication Date
AU2001289080A1 true AU2001289080A1 (en) 2002-04-08

Family

ID=26926203

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001289080A Abandoned AU2001289080A1 (en) 2000-09-14 2001-09-14 Highly efficient capacitor structures with enhanced matching properties

Country Status (9)

Country Link
US (2) US6690570B2 (en)
EP (1) EP1319245B1 (en)
JP (1) JP2004511899A (en)
KR (1) KR100864122B1 (en)
CN (1) CN1459123A (en)
AT (1) ATE396496T1 (en)
AU (1) AU2001289080A1 (en)
DE (1) DE60134159D1 (en)
WO (1) WO2002027770A2 (en)

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Also Published As

Publication number Publication date
DE60134159D1 (en) 2008-07-03
WO2002027770A3 (en) 2003-02-27
US20030206389A1 (en) 2003-11-06
CN1459123A (en) 2003-11-26
EP1319245B1 (en) 2008-05-21
US20020093780A1 (en) 2002-07-18
JP2004511899A (en) 2004-04-15
WO2002027770A2 (en) 2002-04-04
EP1319245A2 (en) 2003-06-18
ATE396496T1 (en) 2008-06-15
KR100864122B1 (en) 2008-10-16
KR20030036792A (en) 2003-05-09
US6690570B2 (en) 2004-02-10

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