AU2001274135A1 - Single photon source based on transmitters with selectively distributed frequencies - Google Patents

Single photon source based on transmitters with selectively distributed frequencies

Info

Publication number
AU2001274135A1
AU2001274135A1 AU2001274135A AU7413501A AU2001274135A1 AU 2001274135 A1 AU2001274135 A1 AU 2001274135A1 AU 2001274135 A AU2001274135 A AU 2001274135A AU 7413501 A AU7413501 A AU 7413501A AU 2001274135 A1 AU2001274135 A1 AU 2001274135A1
Authority
AU
Australia
Prior art keywords
emitters
frequency
cavity
single photon
source based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001274135A
Inventor
Bruno Gayral
Jean-Michel Gerard
Dang Le Si
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Orange SA
Original Assignee
Centre National de la Recherche Scientifique CNRS
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, France Telecom SA filed Critical Centre National de la Recherche Scientifique CNRS
Publication of AU2001274135A1 publication Critical patent/AU2001274135A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Luminescent Compositions (AREA)
  • Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

Apparatus for single photon source based on emitters with frequencies distributed in a chosen manner. In one embodiment, the apparatus comprises an opto-electronic component capable or emitting light pulses containing a single photon comprising a resonant optical cavity and a group of photon emitters placed in this optical cavity, a single one of these emitters having an emission frequency equal to approximately the resonant frequency of the cavity characterised in that all emitters have a spectral distribution with a concentration of emitter frequencies at a given frequency, and in that the cavity is made so that its resonant frequency is different from this concentration frequency so that the number of emitters with an emission frequency corresponding to the resonant frequency of the cavity is close to one.
AU2001274135A 2000-05-29 2001-05-28 Single photon source based on transmitters with selectively distributed frequencies Abandoned AU2001274135A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0006824A FR2809542B1 (en) 2000-05-29 2000-05-29 SOURCE HAS A PHOTON BASED ON TRANSMITTERS WHOSE FREQUENCIES ARE SEPARATELY DISTRIBUTED
FR0006824 2000-05-29
PCT/FR2001/001637 WO2001093384A1 (en) 2000-05-29 2001-05-28 Single photon source based on transmitters with selectively distributed frequencies

Publications (1)

Publication Number Publication Date
AU2001274135A1 true AU2001274135A1 (en) 2001-12-11

Family

ID=8850705

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001274135A Abandoned AU2001274135A1 (en) 2000-05-29 2001-05-28 Single photon source based on transmitters with selectively distributed frequencies

Country Status (7)

Country Link
US (1) US6868103B2 (en)
EP (1) EP1285479B1 (en)
JP (1) JP4972733B2 (en)
AT (1) ATE556473T1 (en)
AU (1) AU2001274135A1 (en)
FR (1) FR2809542B1 (en)
WO (1) WO2001093384A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3924630B2 (en) * 2000-12-15 2007-06-06 独立行政法人科学技術振興機構 Quantum dot trigger photon and trigger photon pair generator and method
US7068698B2 (en) * 2001-02-07 2006-06-27 The Board Of Trustees Of The Leland Stanford Junior University Room-temperature source of single photons based on a single molecule in a condensed matter host
FR2839388A1 (en) * 2002-05-03 2003-11-07 St Microelectronics Sa Integrated circuit using a MOS transistor with a mushroom shaped grid to generate a single electron to a quantum box to generate the emission of a single photon
US7253871B2 (en) * 2003-01-09 2007-08-07 University Of Rochester Efficient room-temperature source of polarized single photons
GB2403344B (en) 2003-06-24 2005-08-24 Toshiba Res Europ Ltd A photon source and method of fabricating a photon source
GB2412008A (en) * 2004-03-11 2005-09-14 Toshiba Res Europ Ltd Single photon optoelectronic device
JP4982838B2 (en) * 2004-07-23 2012-07-25 国立大学法人横浜国立大学 Light control element
DE102005057800B4 (en) * 2005-11-30 2009-02-26 Technische Universität Berlin Single photon source and method for its production and operation
US7546013B1 (en) * 2006-05-31 2009-06-09 Hewlett-Packard Development Company Nanoparticle coupled to waveguide
US8670471B2 (en) * 2009-02-27 2014-03-11 California Institute Of Technology Photonic crystal cavities and related devices and methods
EP2457265B1 (en) 2009-07-23 2014-10-29 Danmarks Tekniske Universitet An Electrically-driven single photon source
FR2955401B1 (en) * 2010-01-19 2012-08-03 Centre Nat Rech Scient SOURCE OF INTEGRATED POLARIZATION PHOTON PAIRS AND METHOD FOR MANUFACTURING THE SAME
JP2011155320A (en) * 2010-01-25 2011-08-11 Sony Corp Light source device, and communication device
DE102012025088A1 (en) * 2012-12-20 2014-06-26 Forschungszentrum Jülich GmbH Mass production single photon source and manufacturing process
JP6296548B2 (en) * 2014-07-02 2018-03-20 富士通株式会社 Photon generator and photon generation method
US10431956B2 (en) * 2015-07-14 2019-10-01 International Business Machines Corporation Nanocavity monolayer laser monolithically integrated with LED pump
GB2555100B (en) * 2016-10-14 2020-07-08 Toshiba Res Europe Limited A photon source and a method of fabricating a photon source
EP4060832A1 (en) * 2021-03-16 2022-09-21 Technische Universität Berlin Radiation emitter and method of fabricating a radiation emitter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS636890A (en) * 1986-06-26 1988-01-12 Fuji Photo Film Co Ltd Semiconductor laser optical system
US5859867A (en) * 1995-11-30 1999-01-12 Massachusetts Institute Of Technology Microlaser
JP2953392B2 (en) * 1996-08-27 1999-09-27 日本電気株式会社 Wavelength division multiplexing transmission system using surface emitting devices
GB2354368B (en) * 1999-09-14 2001-12-05 Toshiba Res Europ Ltd A photon source

Also Published As

Publication number Publication date
US6868103B2 (en) 2005-03-15
EP1285479B1 (en) 2012-05-02
FR2809542A1 (en) 2001-11-30
ATE556473T1 (en) 2012-05-15
US20030152228A1 (en) 2003-08-14
WO2001093384A1 (en) 2001-12-06
EP1285479A1 (en) 2003-02-26
JP2004501514A (en) 2004-01-15
JP4972733B2 (en) 2012-07-11
FR2809542B1 (en) 2005-02-25

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