AU2001273466A1 - Integrated tunable surface acoustic wave technology and sensors provided thereby - Google Patents

Integrated tunable surface acoustic wave technology and sensors provided thereby

Info

Publication number
AU2001273466A1
AU2001273466A1 AU2001273466A AU7346601A AU2001273466A1 AU 2001273466 A1 AU2001273466 A1 AU 2001273466A1 AU 2001273466 A AU2001273466 A AU 2001273466A AU 7346601 A AU7346601 A AU 7346601A AU 2001273466 A1 AU2001273466 A1 AU 2001273466A1
Authority
AU
Australia
Prior art keywords
acoustic wave
surface acoustic
sensors provided
wave technology
tunable surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001273466A
Inventor
Nuri W. Emanetoglu
Yicheng Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rutgers State University of New Jersey
Original Assignee
Rutgers State University of New Jersey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rutgers State University of New Jersey filed Critical Rutgers State University of New Jersey
Publication of AU2001273466A1 publication Critical patent/AU2001273466A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/0296—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
    • H03H9/02976—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties with semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
AU2001273466A 2000-07-13 2001-07-13 Integrated tunable surface acoustic wave technology and sensors provided thereby Abandoned AU2001273466A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US21789800P 2000-07-13 2000-07-13
US21789700P 2000-07-13 2000-07-13
US60217897 2000-07-13
US60217898 2000-07-13
PCT/US2001/022218 WO2002007309A2 (en) 2000-07-13 2001-07-13 Integrated tunable surface acoustic wave technology and sensors provided thereby

Publications (1)

Publication Number Publication Date
AU2001273466A1 true AU2001273466A1 (en) 2002-01-30

Family

ID=26912364

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001273466A Abandoned AU2001273466A1 (en) 2000-07-13 2001-07-13 Integrated tunable surface acoustic wave technology and sensors provided thereby

Country Status (3)

Country Link
US (2) US6621192B2 (en)
AU (1) AU2001273466A1 (en)
WO (1) WO2002007309A2 (en)

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JP3548735B2 (en) 2001-06-29 2004-07-28 士郎 酒井 Method of manufacturing gallium nitride based compound semiconductor
US7005685B2 (en) * 2002-02-28 2006-02-28 Shiro Sakai Gallium-nitride-based compound semiconductor device
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US7134319B2 (en) * 2004-08-12 2006-11-14 Honeywell International Inc. Acoustic wave sensor with reduced condensation and recovery time
US20060033039A1 (en) * 2004-08-12 2006-02-16 Williams John R Photo-controlled luminescence sensor system
ITMI20042017A1 (en) * 2004-10-22 2005-01-22 Getters Spa GAS SURFACE SENSOR OF ACOUSTIC WAVES AND PROCEDURE FOR ITS MANUFACTURING
US7017416B1 (en) 2004-10-22 2006-03-28 Honeywell International, Inc. Disposable pressure diaphragm and wireless sensor systems and methods
US7723154B1 (en) 2005-10-19 2010-05-25 North Carolina State University Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
US7343804B2 (en) * 2005-11-14 2008-03-18 Honeywell International Inc. Wireless acoustic wave sensor system for use in vehicle applications
TWI330461B (en) * 2006-01-12 2010-09-11 Ind Tech Res Inst Surface acoustic wave bio-chip
US7554144B2 (en) * 2006-04-17 2009-06-30 Macronix International Co., Ltd. Memory device and manufacturing method
JP4848849B2 (en) * 2006-06-13 2011-12-28 富士ゼロックス株式会社 Sensor
US7687971B2 (en) * 2006-08-15 2010-03-30 Northrop Grumman Corporation Electric field control of surface acoustic wave velocity
DE102006057747B4 (en) * 2006-09-27 2015-10-15 Osram Opto Semiconductors Gmbh Semiconductor body and semiconductor chip with a semiconductor body
US7656253B2 (en) 2007-04-18 2010-02-02 Northrop Grumman Space & Mission Systems Corporation Surface acoustic wave passband control
US8508100B2 (en) * 2008-11-04 2013-08-13 Samsung Electronics Co., Ltd. Surface acoustic wave element, surface acoustic wave device and methods for manufacturing the same
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US9128033B2 (en) * 2009-11-06 2015-09-08 Samsung Electronics Co., Ltd. Multiple surface acoustic wave sensor system
US7829376B1 (en) 2010-04-07 2010-11-09 Lumenz, Inc. Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities
US20110248322A1 (en) * 2010-04-12 2011-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric Gate-Induced Strain
US8480793B2 (en) 2010-09-15 2013-07-09 Exxonmobil Research And Engineering Company Method and apparatus for removing contaminant from fluid
KR20130062625A (en) * 2011-12-05 2013-06-13 삼성전자주식회사 Apparatus and method for measuring signal using sinc function
CN102569483A (en) * 2011-12-19 2012-07-11 北京交通大学 MgZnO solar-blind photoresistor and preparation method thereof
US9270251B2 (en) * 2013-03-15 2016-02-23 Adaptive Methods, Inc. Carrier for mounting a piezoelectric device on a circuit board and method for mounting a piezoelectric device on a circuit board
CN103268897B (en) * 2013-05-30 2015-11-04 吉林大学 There is ultraviolet detector and the preparation method of the broad stopband oxide semiconductor thin film of Passivation Treatment
EP2889589A1 (en) * 2013-12-24 2015-07-01 Honeywell International Inc. Bulk acoustic wave (BAW) sensors for liquid level measurements
CN107850486B (en) * 2015-07-17 2020-06-16 电子部品研究院 Multiple light sensor and method for manufacturing the same
WO2017014328A1 (en) 2015-07-17 2017-01-26 전자부품연구원 Ultraviolet sensor and method for producing same
US10126165B2 (en) 2015-07-28 2018-11-13 Carrier Corporation Radiation sensors
US9865766B2 (en) 2015-07-28 2018-01-09 Carrier Corporation Ultraviolet photodetectors and methods of making ultraviolet photodetectors
US9928727B2 (en) 2015-07-28 2018-03-27 Carrier Corporation Flame detectors
US9806125B2 (en) 2015-07-28 2017-10-31 Carrier Corporation Compositionally graded photodetectors
RU2613590C1 (en) * 2015-11-09 2017-03-17 федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" Passive wireless surface acoustic wave ultraviolet radiation sensor
CN105572303B (en) * 2015-12-08 2017-12-15 夏文轩 A kind of chemical sensing devices
WO2018011697A1 (en) * 2016-07-11 2018-01-18 Epitronic Holdings Pte. Ltd. Surface acoustic wave rfid sensor for hemodynamic wearables
CN106410588B (en) * 2016-08-26 2019-02-22 中国科学院深圳先进技术研究院 A kind of controller and laser stimulation device for controlling acoustooptical modulator

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Also Published As

Publication number Publication date
WO2002007309A2 (en) 2002-01-24
US20020043890A1 (en) 2002-04-18
US20030201694A1 (en) 2003-10-30
WO2002007309A3 (en) 2002-04-18
US6621192B2 (en) 2003-09-16
US6710515B2 (en) 2004-03-23

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