AU2001250835A1 - Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals - Google Patents

Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals

Info

Publication number
AU2001250835A1
AU2001250835A1 AU2001250835A AU5083501A AU2001250835A1 AU 2001250835 A1 AU2001250835 A1 AU 2001250835A1 AU 2001250835 A AU2001250835 A AU 2001250835A AU 5083501 A AU5083501 A AU 5083501A AU 2001250835 A1 AU2001250835 A1 AU 2001250835A1
Authority
AU
Australia
Prior art keywords
seed
intergrowth
large size
tiled
size single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001250835A
Inventor
William J. Everson
David W. Snyder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coherent Corp
Original Assignee
II VI Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by II VI Inc filed Critical II VI Inc
Publication of AU2001250835A1 publication Critical patent/AU2001250835A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2001250835A 2000-03-13 2001-03-13 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals Abandoned AU2001250835A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18878400P 2000-03-13 2000-03-13
US60/188,784 2000-03-13
PCT/US2001/008047 WO2001068957A1 (en) 2000-03-13 2001-03-13 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals

Publications (1)

Publication Number Publication Date
AU2001250835A1 true AU2001250835A1 (en) 2001-09-24

Family

ID=22694508

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001250835A Abandoned AU2001250835A1 (en) 2000-03-13 2001-03-13 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals

Country Status (6)

Country Link
US (1) US6805745B2 (en)
EP (1) EP1268883A1 (en)
JP (1) JP2003527298A (en)
AU (1) AU2001250835A1 (en)
TW (1) TW539783B (en)
WO (1) WO2001068957A1 (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2852974A1 (en) * 2003-03-31 2004-10-01 Soitec Silicon On Insulator PROCESS FOR THE PRODUCTION OF MONOCRYSTALLINE CRYSTALS
US7608524B2 (en) * 2005-04-19 2009-10-27 Ii-Vi Incorporated Method of and system for forming SiC crystals having spatially uniform doping impurities
US8048221B2 (en) * 2006-01-20 2011-11-01 Stoddard Nathan G Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
KR101145234B1 (en) 2006-05-18 2012-05-25 쇼와 덴코 가부시키가이샤 Method for producing silicon carbide single crystal
JP5332168B2 (en) * 2006-11-17 2013-11-06 住友電気工業株式会社 Method for producing group III nitride crystal
CN101796226A (en) * 2007-07-20 2010-08-04 Bp北美公司 Methods and apparatuses for manufacturing cast silicon from seed crystals
WO2009014962A1 (en) 2007-07-20 2009-01-29 Bp Corporation North America Inc. Methods and apparatuses for manufacturing cast silicon from seed crystals
WO2009015168A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing geometric multi-crystalline cast materials
WO2009015167A1 (en) 2007-07-25 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing monocrystalline or near-monocrystalline cast materials
US8206636B2 (en) 2008-06-20 2012-06-26 Amaranth Medical Pte. Stent fabrication via tubular casting processes
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification
JP2012516572A (en) * 2009-01-30 2012-07-19 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション SEED LAYER AND SEED LAYER MANUFACTURING METHOD
JP2011246315A (en) * 2010-05-28 2011-12-08 Sumitomo Electric Ind Ltd Silicon carbide substrate and method for producing the same
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
DE112011105073T5 (en) * 2011-03-22 2013-12-24 Sumitomo Electric Industries, Ltd. silicon carbide substrate
US9322110B2 (en) 2013-02-21 2016-04-26 Ii-Vi Incorporated Vanadium doped SiC single crystals and method thereof
US9580837B2 (en) 2014-09-03 2017-02-28 Ii-Vi Incorporated Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material
CN114000197A (en) 2015-09-24 2022-02-01 帕里杜斯有限公司 Vapor deposition apparatus and techniques using high purity polymer-derived silicon carbide
CN105525351A (en) * 2015-12-24 2016-04-27 中国科学院上海硅酸盐研究所 Efficient SiC crystal diameter-expanding method
CN105671638B (en) * 2016-03-01 2018-07-06 山东大学 A kind of preparation method of major diameter dimension SiC seed crystals
US20170321345A1 (en) 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
JP6839525B2 (en) 2016-11-15 2021-03-10 昭和電工株式会社 SiC single crystal complex and SiC ingot
US11466384B2 (en) 2019-01-08 2022-10-11 Slt Technologies, Inc. Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
CN110541199B (en) * 2019-10-11 2020-07-31 山东大学 Preparation method of high-quality SiC seed crystal with diameter of 8 inches or more
CN112746321A (en) * 2019-10-31 2021-05-04 赛维Ldk太阳能高科技(新余)有限公司 Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot
JP2023513570A (en) 2020-02-11 2023-03-31 エスエルティー テクノロジーズ インコーポレイテッド Improved III-Nitride Substrates, Methods of Making the Same, and Methods of Using The Same
US11721549B2 (en) 2020-02-11 2023-08-08 Slt Technologies, Inc. Large area group III nitride crystals and substrates, methods of making, and methods of use
AT524249B1 (en) * 2020-09-28 2023-07-15 Ebner Ind Ofenbau Method of growing single crystals
EP4144893A1 (en) 2021-09-06 2023-03-08 Instytut Wysokich Cisnien Polskiej Akademii Nauk A method for reducing or eliminating cracks during crystal growing process and a shaped metal piece for use in this method
CN114032613B (en) * 2021-10-14 2023-10-31 吉林大学 Method for improving quality of splicing seam of diamond monocrystal grown by splicing method
CN114262936B (en) * 2021-12-17 2023-08-01 杭州乾晶半导体有限公司 Silicon carbide single crystal growth method and crack closure growth method
CN114262935A (en) * 2021-12-17 2022-04-01 杭州乾晶半导体有限公司 Growth method of large-size silicon carbide seed crystal and growth method of corresponding single crystal

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147572A (en) 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
JP3030111B2 (en) * 1991-03-27 2000-04-10 三洋電機株式会社 Semiconductor crystal growth method
US5433167A (en) 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
US5441011A (en) 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5746827A (en) * 1995-12-27 1998-05-05 Northrop Grumman Corporation Method of producing large diameter silicon carbide crystals
US5667587A (en) * 1996-12-18 1997-09-16 Northrop Gruman Corporation Apparatus for growing silicon carbide crystals
US5873937A (en) 1997-05-05 1999-02-23 Northrop Grumman Corporation Method of growing 4H silicon carbide crystal
US5788768A (en) 1997-05-08 1998-08-04 Northrop Grumman Corporation Feedstock arrangement for silicon carbide boule growth
US6139632A (en) 1997-09-15 2000-10-31 Sumitomo Sitix Corporation Seed crystals, seed crystal holders, and a method for pulling a single crystal
JP4061700B2 (en) * 1998-03-19 2008-03-19 株式会社デンソー Single crystal manufacturing method

Also Published As

Publication number Publication date
EP1268883A1 (en) 2003-01-02
WO2001068957A9 (en) 2003-01-16
JP2003527298A (en) 2003-09-16
US20030029376A1 (en) 2003-02-13
US6805745B2 (en) 2004-10-19
TW539783B (en) 2003-07-01
WO2001068957A1 (en) 2001-09-20

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