AU2001247668A1 - Method and apparatus for increased workpiece throughput - Google Patents

Method and apparatus for increased workpiece throughput

Info

Publication number
AU2001247668A1
AU2001247668A1 AU2001247668A AU4766801A AU2001247668A1 AU 2001247668 A1 AU2001247668 A1 AU 2001247668A1 AU 2001247668 A AU2001247668 A AU 2001247668A AU 4766801 A AU4766801 A AU 4766801A AU 2001247668 A1 AU2001247668 A1 AU 2001247668A1
Authority
AU
Australia
Prior art keywords
workpiece throughput
increased workpiece
increased
throughput
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001247668A
Inventor
Scott Baron
Gerald M. Cox
Prasad Padmanabhan
Albert Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Matrix Integrated Systems Inc
Original Assignee
Matrix Integrated Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matrix Integrated Systems Inc filed Critical Matrix Integrated Systems Inc
Publication of AU2001247668A1 publication Critical patent/AU2001247668A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
AU2001247668A 2000-04-03 2001-03-22 Method and apparatus for increased workpiece throughput Abandoned AU2001247668A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US19422700P 2000-04-03 2000-04-03
US60194227 2000-04-03
US09/749,648 US6409932B2 (en) 2000-04-03 2000-12-27 Method and apparatus for increased workpiece throughput
US09749648 2000-12-27
PCT/US2001/009134 WO2001075939A2 (en) 2000-04-03 2001-03-22 Method and apparatus for increased workpiece throughput

Publications (1)

Publication Number Publication Date
AU2001247668A1 true AU2001247668A1 (en) 2001-10-15

Family

ID=26889808

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001247668A Abandoned AU2001247668A1 (en) 2000-04-03 2001-03-22 Method and apparatus for increased workpiece throughput

Country Status (3)

Country Link
US (3) US6409932B2 (en)
AU (1) AU2001247668A1 (en)
WO (1) WO2001075939A2 (en)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7231141B2 (en) 2001-04-23 2007-06-12 Asm America, Inc. High temperature drop-off of a substrate
JP2003031639A (en) * 2001-07-17 2003-01-31 Canon Inc Substrate processor, carrying method of substrate and aligner
JP2003045947A (en) * 2001-07-27 2003-02-14 Canon Inc Substrate processing apparatus and aligner
JP3602506B2 (en) * 2002-02-01 2004-12-15 株式会社協真エンジニアリング Pressure heating drying method and pressure heating drying apparatus
KR100379210B1 (en) * 2002-04-19 2003-04-08 피.에스.케이.테크(주) Method for Semiconductor Wafer Ashing
US20040040509A1 (en) * 2002-09-04 2004-03-04 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for preventing etchant condensation on wafer in a cooling chamber
WO2004025710A2 (en) * 2002-09-10 2004-03-25 Axcelis Technologies, Inc. Method of heating a substrate in a variable temperature process using a fixed temperature chuck
KR20060038925A (en) * 2003-05-07 2006-05-04 액셀리스 테크놀러지스, 인크. Wide temperature range chuck system
US7799685B2 (en) * 2003-10-13 2010-09-21 Mattson Technology, Inc. System and method for removal of photoresist in transistor fabrication for integrated circuit manufacturing
US20050205210A1 (en) * 2004-01-06 2005-09-22 Devine Daniel J Advanced multi-pressure workpiece processing
WO2005072211A2 (en) * 2004-01-20 2005-08-11 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US8475624B2 (en) * 2005-09-27 2013-07-02 Lam Research Corporation Method and system for distributing gas for a bevel edge etcher
CN100343952C (en) * 2005-12-05 2007-10-17 北京北方微电子基地设备工艺研究中心有限责任公司 Silicon chip unloading technology capable of raising production volume and reducing silicon chip surface roughness
US7737010B2 (en) * 2006-04-14 2010-06-15 Micron Technology, Inc. Method of photoresist strip for plasma doping process of semiconductor manufacturing
US7968401B2 (en) * 2009-01-26 2011-06-28 Applied Materials, Inc. Reducing photoresist layer degradation in plasma immersion ion implantation
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
US9613825B2 (en) * 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US10535566B2 (en) 2016-04-28 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US20230207291A1 (en) * 2021-12-29 2023-06-29 Applied Materials, Inc. Dual pressure oxidation method for forming an oxide layer in a feature

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US535A (en) * 1837-12-29 Safety railroad-gar
US438A (en) * 1837-10-23 Improvement in the composition of matter to be used as paint for houses
JPH0770524B2 (en) * 1987-08-19 1995-07-31 富士通株式会社 Method for manufacturing semiconductor device
US5968379A (en) * 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US5965034A (en) * 1995-12-04 1999-10-12 Mc Electronics Co., Ltd. High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
US5993916A (en) * 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5968374A (en) * 1997-03-20 1999-10-19 Lam Research Corporation Methods and apparatus for controlled partial ashing in a variable-gap plasma processing chamber
EP0940846A1 (en) 1998-03-06 1999-09-08 Interuniversitair Micro-Elektronica Centrum Vzw Method for stripping ion implanted photoresist layer
US6200911B1 (en) * 1998-04-21 2001-03-13 Applied Materials, Inc. Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power
US6130169A (en) * 1999-05-21 2000-10-10 Advanced Micro Devices, Inc. Efficient in-situ resist strip process for heavy polymer metal etch
US6524936B2 (en) 2000-12-22 2003-02-25 Axcelis Technologies, Inc. Process for removal of photoresist after post ion implantation

Also Published As

Publication number Publication date
US20010047979A1 (en) 2001-12-06
US6736927B2 (en) 2004-05-18
US20020151184A1 (en) 2002-10-17
US6605226B2 (en) 2003-08-12
WO2001075939A3 (en) 2002-02-28
US20020153099A1 (en) 2002-10-24
US6409932B2 (en) 2002-06-25
WO2001075939A2 (en) 2001-10-11

Similar Documents

Publication Publication Date Title
AU2001247668A1 (en) Method and apparatus for increased workpiece throughput
AU2001281373A1 (en) Method and apparatus for blending process materials
AU2002303701A1 (en) Method and apparatus for processing an international passenger
AU6487199A (en) Apparatus and method for fabricating flat workpieces
AU2002362092A1 (en) Apparatus and method for single- or double- substrate processing
SG98057A1 (en) Dicing method and dicing apparatus for dicing plate-like workpiece
AU2002226002A1 (en) Apparatus and method for detecting and removing undesirable material from workpieces
AU2002365975A1 (en) Apparatus and method for performing thrombolysis
GB0124758D0 (en) Apparatus and method for facilitating trade
AU2001287255A1 (en) Apparatus and method for electrochemically processing a microelectronic workpiece
AU2002237226A1 (en) Method and apparatus for classifying interference
AU2002222639A1 (en) Processing method and processing apparatus
AU2001290051A1 (en) Method and apparatus for analytical problem solving
AU2001265416A1 (en) Method and apparatus for beam forming
AU2001263375A1 (en) Apparatus and method for packet classification
AU2001262978A1 (en) Method and apparatus for interference reduction
AU2002360593A1 (en) Method and apparatus for nano-sensing
EP1368172A4 (en) Method and apparatus for cutting workpieces
AU4281100A (en) Method and apparatus for moving workpieces
AU2002222137A1 (en) Method and apparatus for processing waste
PT1406744T (en) Apparatus and method for cutting workpieces
AU4538799A (en) Apparatus and method for hydroforming workpieces
AU2001237828A1 (en) Method and apparatus for joining workpieces
AU2002353387A1 (en) Apparatus and method for decorating objects
AU5262901A (en) Apparatus and method for auction