AU2001245980A1 - Methods for repairing defects on a semiconductor substrate - Google Patents

Methods for repairing defects on a semiconductor substrate

Info

Publication number
AU2001245980A1
AU2001245980A1 AU2001245980A AU4598001A AU2001245980A1 AU 2001245980 A1 AU2001245980 A1 AU 2001245980A1 AU 2001245980 A AU2001245980 A AU 2001245980A AU 4598001 A AU4598001 A AU 4598001A AU 2001245980 A1 AU2001245980 A1 AU 2001245980A1
Authority
AU
Australia
Prior art keywords
methods
semiconductor substrate
repairing defects
repairing
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001245980A
Inventor
Cyprian E. Uzoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASM Nutool Inc
Original Assignee
ASM Nutool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM Nutool Inc filed Critical ASM Nutool Inc
Publication of AU2001245980A1 publication Critical patent/AU2001245980A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
AU2001245980A 2000-03-24 2001-03-22 Methods for repairing defects on a semiconductor substrate Abandoned AU2001245980A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/534,704 US6582579B1 (en) 2000-03-24 2000-03-24 Methods for repairing defects on a semiconductor substrate
US09534704 2000-03-24
PCT/US2001/009500 WO2001078135A2 (en) 2000-03-24 2001-03-22 Methods for repairing defects on a semiconductor substrate

Publications (1)

Publication Number Publication Date
AU2001245980A1 true AU2001245980A1 (en) 2001-10-23

Family

ID=24131177

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001245980A Abandoned AU2001245980A1 (en) 2000-03-24 2001-03-22 Methods for repairing defects on a semiconductor substrate

Country Status (3)

Country Link
US (2) US6582579B1 (en)
AU (1) AU2001245980A1 (en)
WO (1) WO2001078135A2 (en)

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WO2002023613A2 (en) * 2000-09-15 2002-03-21 Rodel Holdings, Inc. Metal cmp process with reduced dishing
US6943112B2 (en) 2002-07-22 2005-09-13 Asm Nutool, Inc. Defect-free thin and planar film processing
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) * 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US20060169597A1 (en) * 2001-03-14 2006-08-03 Applied Materials, Inc. Method and composition for polishing a substrate
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US20040253809A1 (en) * 2001-08-18 2004-12-16 Yao Xiang Yu Forming a semiconductor structure using a combination of planarizing methods and electropolishing
US6884724B2 (en) * 2001-08-24 2005-04-26 Applied Materials, Inc. Method for dishing reduction and feature passivation in polishing processes
US6815354B2 (en) * 2001-10-27 2004-11-09 Nutool, Inc. Method and structure for thru-mask contact electrodeposition
US6780772B2 (en) * 2001-12-21 2004-08-24 Nutool, Inc. Method and system to provide electroplanarization of a workpiece with a conducting material layer
US6864181B2 (en) * 2003-03-27 2005-03-08 Lam Research Corporation Method and apparatus to form a planarized Cu interconnect layer using electroless membrane deposition
US20060104855A1 (en) * 2004-11-15 2006-05-18 Metallic Resources, Inc. Lead-free solder alloy
US7247558B2 (en) 2004-12-03 2007-07-24 Novellus Systems, Inc. Method and system for electroprocessing conductive layers
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
US7485561B2 (en) 2006-03-29 2009-02-03 Asm Nutool, Inc. Filling deep features with conductors in semiconductor manufacturing
US7625814B2 (en) 2006-03-29 2009-12-01 Asm Nutool, Inc. Filling deep features with conductors in semiconductor manufacturing
US20100084766A1 (en) * 2008-10-08 2010-04-08 International Business Machines Corporation Surface repair structure and process for interconnect applications
US7884016B2 (en) 2009-02-12 2011-02-08 Asm International, N.V. Liner materials and related processes for 3-D integration
US9279189B2 (en) 2014-05-05 2016-03-08 Apple Inc. Methods for forming defect-free anodized parts
US9837341B1 (en) * 2016-09-15 2017-12-05 Intel Corporation Tin-zinc microbump structures
US20180096858A1 (en) * 2016-09-30 2018-04-05 International Business Machines Corporation Metalization repair in semiconductor wafers
US10741748B2 (en) * 2018-06-25 2020-08-11 International Business Machines Corporation Back end of line metallization structures

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US4610772A (en) 1985-07-22 1986-09-09 The Carolinch Company Electrolytic plating apparatus
US5024735A (en) 1989-02-15 1991-06-18 Kadija Igor V Method and apparatus for manufacturing interconnects with fine lines and spacing
US5142828A (en) 1990-06-25 1992-09-01 Microelectronics And Computer Technology Corporation Correcting a defective metallization layer on an electronic component by polishing
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Also Published As

Publication number Publication date
US20040035709A1 (en) 2004-02-26
WO2001078135A3 (en) 2002-02-21
WO2001078135A2 (en) 2001-10-18
US6582579B1 (en) 2003-06-24

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