ATE472836T1 - Hochleistungslasersystem - Google Patents

Hochleistungslasersystem

Info

Publication number
ATE472836T1
ATE472836T1 AT03709665T AT03709665T ATE472836T1 AT E472836 T1 ATE472836 T1 AT E472836T1 AT 03709665 T AT03709665 T AT 03709665T AT 03709665 T AT03709665 T AT 03709665T AT E472836 T1 ATE472836 T1 AT E472836T1
Authority
AT
Austria
Prior art keywords
laser system
amplifier member
diode
diode amplifier
reflective members
Prior art date
Application number
AT03709665T
Other languages
English (en)
Inventor
Paul Petersen
Original Assignee
Univ Danmarks Tekniske
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Danmarks Tekniske filed Critical Univ Danmarks Tekniske
Application granted granted Critical
Publication of ATE472836T1 publication Critical patent/ATE472836T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1234—Actively induced grating, e.g. acoustically or electrically induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
AT03709665T 2002-03-04 2003-03-03 Hochleistungslasersystem ATE472836T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DKPA200200328 2002-03-04
PCT/DK2003/000132 WO2003075419A2 (en) 2002-03-04 2003-03-03 High-power diode laser system

Publications (1)

Publication Number Publication Date
ATE472836T1 true ATE472836T1 (de) 2010-07-15

Family

ID=27771796

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03709665T ATE472836T1 (de) 2002-03-04 2003-03-03 Hochleistungslasersystem

Country Status (7)

Country Link
US (1) US7286578B2 (de)
EP (1) EP1481454B1 (de)
JP (1) JP2005519476A (de)
AT (1) ATE472836T1 (de)
AU (1) AU2003214020A1 (de)
DE (1) DE60333173D1 (de)
WO (1) WO2003075419A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2834130B1 (fr) * 2001-12-20 2005-02-18 Thales Sa Procede d'amelioration des caracteristiques optiques de composants optoelectroniques multicouches
US7382808B1 (en) * 2004-12-15 2008-06-03 Hrl Laboratories, Llc Apparatus and method for spatial mode selection of planar waveguide and thin slab lasers in the large cross section size direction
US7545493B2 (en) * 2005-12-23 2009-06-09 Bwt Property, Inc. Raman spectroscopic apparatus utilizing internal grating stabilized semiconductor laser with high spectral brightness
US7929585B2 (en) * 2006-11-20 2011-04-19 Tilleman Michael M High brightness semiconductor laser diode arrays
US8401399B2 (en) 2009-05-28 2013-03-19 Freedom Photonics, Llc. Chip-based advanced modulation format transmitter
US9344196B1 (en) 2009-05-28 2016-05-17 Freedom Photonics, Llc. Integrated interferometric optical transmitter
US20140081096A1 (en) * 2012-09-20 2014-03-20 Elwha Llc Focusing electromagnetic radiation within a turbid medium using ultrasonic modulation
US9232896B2 (en) 2012-09-20 2016-01-12 Elwha Llc Focusing electromagnetic radiation within a turbid medium using ultrasonic modulation
JP6145275B2 (ja) * 2013-01-29 2017-06-07 アルファクス株式会社 レーザ光のプロファイル測定方法
US9601895B2 (en) 2013-10-18 2017-03-21 Bae Systems Information And Electronic Systems Integration Inc. Ultra fast semiconductor laser
JPWO2016080252A1 (ja) * 2014-11-20 2017-08-31 カナレ電気株式会社 外部共振器型半導体レーザ
US20180175590A1 (en) * 2015-08-04 2018-06-21 Mitsubishi Electric Corporation Semiconductor laser device
US10320152B2 (en) 2017-03-28 2019-06-11 Freedom Photonics Llc Tunable laser

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509276B1 (de) * 1970-11-11 1975-04-11
JPS616888A (ja) * 1984-06-20 1986-01-13 Matsushita Electric Ind Co Ltd 外部共振器型半導体レ−ザ装置
US4773739A (en) * 1986-03-05 1988-09-27 Hughes Aircraft Company Self-pumped phase conjugate mirror and method using AC-field enhanced photorefractive effect
JP2518179B2 (ja) * 1987-09-14 1996-07-24 横河電機株式会社 レ―ザ光源
US5022034A (en) * 1989-06-27 1991-06-04 May A D Laser device, including control of polarization mode
JPH05206579A (ja) 1991-05-17 1993-08-13 Canon Inc 外部共振器型レーザ装置
CA2072290A1 (en) * 1991-08-27 1993-02-28 Juan L. Julia Forming leveling tool
US5835522A (en) 1996-11-19 1998-11-10 Hewlett-Packard Co. Robust passively-locked optical cavity system
FR2764744B1 (fr) * 1997-06-17 1999-08-20 Michel Ouhayoun Laser a miroir a conjugaison de phase par melange a quatre ondes et procede de renovation d'un laser classique par transformation en un laser a miroir a conjugaison de phase
FR2785459B1 (fr) 1998-10-28 2001-05-04 Centre Nat Rech Scient Filtres auto-adaptes pour l'affinement de l'emission laser
US6556611B1 (en) 1999-05-10 2003-04-29 Princeton Lightwave, Inc. Wide stripe distributed bragg reflector lasers with improved angular and spectral characteristics
EP1287629A2 (de) * 2000-04-07 2003-03-05 The Regents of The University of California Fernabgefragte freiraumische übertragungsverbindung hoher datenrate
US6920160B2 (en) * 2000-06-15 2005-07-19 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Laser resonators comprising mode-selective phase structures

Also Published As

Publication number Publication date
WO2003075419A2 (en) 2003-09-12
US20050163186A1 (en) 2005-07-28
AU2003214020A1 (en) 2003-09-16
EP1481454B1 (de) 2010-06-30
EP1481454A2 (de) 2004-12-01
DE60333173D1 (de) 2010-08-12
US7286578B2 (en) 2007-10-23
JP2005519476A (ja) 2005-06-30
WO2003075419A3 (en) 2003-12-04
AU2003214020A8 (en) 2003-09-16

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