ATE445914T1 - METHOD FOR PRODUCING AN ORGANIC VERTICAL FIELD EFFECT TRANSISTOR - Google Patents

METHOD FOR PRODUCING AN ORGANIC VERTICAL FIELD EFFECT TRANSISTOR

Info

Publication number
ATE445914T1
ATE445914T1 AT04090102T AT04090102T ATE445914T1 AT E445914 T1 ATE445914 T1 AT E445914T1 AT 04090102 T AT04090102 T AT 04090102T AT 04090102 T AT04090102 T AT 04090102T AT E445914 T1 ATE445914 T1 AT E445914T1
Authority
AT
Austria
Prior art keywords
layer
gate electrodes
insulating layer
electrode
forming
Prior art date
Application number
AT04090102T
Other languages
German (de)
Inventor
Michael Dr Redecker
Joerg Fischer
Arthur Mathea
Original Assignee
Samsung Mobile Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Mobile Display Co Ltd filed Critical Samsung Mobile Display Co Ltd
Application granted granted Critical
Publication of ATE445914T1 publication Critical patent/ATE445914T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers

Abstract

A vertical field-effect transistor comprises an insulating layer formed on at least a portion of a source electrode; and discontinuous gate electrodes formed on one surface of the insulating layer while including an oxide layer as a charge carrier block layer on surface(s) to insulate from adjacent conductive layers. A vertical field-effect transistor comprises: a substrate (1); a first electrode formed on one surface of the substrate; an insulating layer (8) formed on at least a portion of the first electrode; discontinuous gate electrodes (5) formed on one surface of the insulating layer while including an oxide layer as a charge carrier block layer on surface(s) to insulate from adjacent conductive layers; an organic semiconductor layer arranged between the discontinuous gate electrodes; and a second electrode formed on the discontinuous gate electrodes and the organic semiconductor layer. Independent claims are also included for: (a) a method of manufacturing a vertical field-effect transistor, comprising: forming a first electrode on a substrate; forming an insulating layer on one surface of the first electrode; forming discontinuous gate electrodes on the insulating layer by using nanoparticles (13); forming a charge carrier block layer on at least a portion of the discontinuous gate electrodes; forming an organic semiconductor layer burying the discontinuous portion of the discontinuous gate electrodes; and forming a second electrode on the organic semiconductor layer and the discontinuous gate electrodes; and (b) a display device comprising: a substrate; a transistor layer formed on one surface of the substrate and including more than one vertical field-effect transistors; a transistor insulating layer formed on one surface of the transistor layer; and a pixel layer including pixel(s) and electrically connected to the transistor layer through a via hole formed in the transistor insulating layer.
AT04090102T 2004-03-11 2004-03-11 METHOD FOR PRODUCING AN ORGANIC VERTICAL FIELD EFFECT TRANSISTOR ATE445914T1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP04090102A EP1577964B1 (en) 2004-03-11 2004-03-11 Method for the production of an organic vertical field effect transistor

Publications (1)

Publication Number Publication Date
ATE445914T1 true ATE445914T1 (en) 2009-10-15

Family

ID=34833697

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04090102T ATE445914T1 (en) 2004-03-11 2004-03-11 METHOD FOR PRODUCING AN ORGANIC VERTICAL FIELD EFFECT TRANSISTOR

Country Status (5)

Country Link
EP (1) EP1577964B1 (en)
KR (1) KR100602259B1 (en)
CN (1) CN101814580B (en)
AT (1) ATE445914T1 (en)
DE (1) DE502004010226D1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100869647B1 (en) * 2007-08-10 2008-11-21 경북대학교 산학협력단 Double side gate type organic light-emitting transistors and method of the same
KR100869648B1 (en) * 2007-08-10 2008-11-21 경북대학교 산학협력단 Stacked double side gate type organic light-emitting transistors and method of the same
KR20120037838A (en) 2010-10-12 2012-04-20 삼성전자주식회사 Transistor and electronic device including the same
CN106206946A (en) * 2015-05-05 2016-12-07 Tcl集团股份有限公司 A kind of organic field effect tube, its preparation method and application
JP2018534760A (en) * 2015-09-11 2018-11-22 ユニバーシティー オブ フロリダ リサーチ ファウンデーション, インコーポレイテッドUniversity Of Florida Research Foundation, Inc. Vertical field effect transistor
CN105609561A (en) * 2016-01-27 2016-05-25 无锡盈芯半导体科技有限公司 Graphene radio frequency transistor and manufacturing method therefor
EP3261128A1 (en) * 2016-06-23 2017-12-27 Karlsruher Institut für Technologie Vertical field-effect transistor, a method for its manufacture, its use, and electronics comprising said field-effect transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5676853A (en) * 1996-05-21 1997-10-14 Micron Display Technology, Inc. Mask for forming features on a semiconductor substrate and a method for forming the mask
US6228539B1 (en) * 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6228538B1 (en) * 1998-08-28 2001-05-08 Micron Technology, Inc. Mask forming methods and field emission display emitter mask forming methods
DE19933564C1 (en) * 1999-07-16 2001-01-25 Infineon Technologies Ag Method for producing a vertical semiconductor transistor component and vertical semiconductor transistor component
AU2001241186A1 (en) * 2000-03-16 2001-09-24 Matsushita Electric Industrial Co., Ltd. Method for precisely machining microstructure
GB0024294D0 (en) * 2000-10-04 2000-11-15 Univ Cambridge Tech Solid state embossing of polymer devices
WO2002046841A1 (en) * 2000-12-05 2002-06-13 Kansai Research Institute. Inc. Active components and photosensitive resin compositions containing the same

Also Published As

Publication number Publication date
CN101814580A (en) 2010-08-25
CN101814580B (en) 2012-05-30
EP1577964B1 (en) 2009-10-14
EP1577964A1 (en) 2005-09-21
DE502004010226D1 (en) 2009-11-26
KR20050091886A (en) 2005-09-15
KR100602259B1 (en) 2006-07-19

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