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High-temperature and high-field cycling reliability of PZT films embedded within 130 nm CMOS

Snippet

We present a systematic reliability study of PZT polarization retention after exposure to high temperatures and high-field cycling. After a 260° C Pb-free solder assembly reflow-like exposure, a signal margin of> 10 μC/cm 2 is achieved at a read voltage of 1 V. Extraction of …

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machine-classified

G01R31/2836 Fault-finding or characterising
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Walters et al., 2018

From Google Scholar

Author
Walters G
Chojecki P
Garraud A
Nishida T
Summerfelt S
Rodriguez J
Acosta A

Publication year
2018
Publication venue
2018 IEEE International Reliability Physics Symposium (IRPS)