WO2026017142A1 - 太阳能器件、太阳能电池组件、用电装置、发电装置以及光伏系统 - Google Patents

太阳能器件、太阳能电池组件、用电装置、发电装置以及光伏系统

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Publication number
WO2026017142A1
WO2026017142A1 PCT/CN2025/109285 CN2025109285W WO2026017142A1 WO 2026017142 A1 WO2026017142 A1 WO 2026017142A1 CN 2025109285 W CN2025109285 W CN 2025109285W WO 2026017142 A1 WO2026017142 A1 WO 2026017142A1
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WO
WIPO (PCT)
Prior art keywords
layer
solar
electrode layer
groove
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/109285
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English (en)
French (fr)
Inventor
马飞
顾帅
王彪
刘天宇
陈俊超
陈国栋
孟轲
郭永胜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Contemporary Amperex Technology Co Ltd
Contemporary Amperex Future Energy Research Institute (Shanghai) Ltd
Original Assignee
Contemporary Amperex Technology Co Ltd
Contemporary Amperex Future Energy Research Institute (Shanghai) Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202410970163.6A external-priority patent/CN121368271A/zh
Priority claimed from CN202422244941.1U external-priority patent/CN223402777U/zh
Application filed by Contemporary Amperex Technology Co Ltd, Contemporary Amperex Future Energy Research Institute (Shanghai) Ltd filed Critical Contemporary Amperex Technology Co Ltd
Publication of WO2026017142A1 publication Critical patent/WO2026017142A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells

Definitions

  • This application relates to the field of photovoltaic technology, and in particular to a solar energy device, solar cell module, electrical device, power generation device, and photovoltaic system.
  • Solar cells convert solar energy into electrical energy.
  • Traditional solar cells typically have a structure consisting of a first electrode layer, a first charge extraction layer, a light-absorbing layer, a second charge extraction layer, and a second electrode layer stacked sequentially.
  • sunlight enters from either the front or back of the cell, it passes through the electrode layers and charge extraction layers. This causes optical absorption and loss of incident light between these layers and interfaces. This absorption loss, inherent in the solar cell's structural design, leads to a decrease in the solar cell's photoelectric conversion efficiency.
  • a solar energy device includes multiple solar cells.
  • Each solar cell includes: a charge-discharging component comprising a first electrode layer and an insulating layer stacked together; a second electrode layer located on the side of the insulating layer away from the first electrode layer, the insulating layer covering a portion of the surface of the second electrode layer, the second electrode layer not covered by the insulating layer being electrically connected to the first electrode layer; and a light-absorbing layer covering the charge-discharging component and the surface of the second electrode layer not covered by the insulating layer.
  • the multiple solar cells are sequentially distributed along a first direction.
  • a first groove is provided between adjacent solar cells, separating the second electrode layers of adjacent solar cells.
  • a second groove is also provided between adjacent solar cells, the bottom of which is located on the surface of the second electrode layer. At least a portion of the electrical connection between the first and second electrode layers is communicated through a conductive medium filled within the second groove.
  • a third groove is also provided between adjacent solar cells, separating the first electrode layers of adjacent solar cells.
  • a fourth groove is also provided between adjacent solar cells, separating the light-absorbing layers of adjacent solar cells.
  • the first, second, third, and fourth grooves divide and connect the multiple solar cells.
  • the design of the first, second, third, and fourth grooves allows for the segmentation and connection of multiple solar cells.
  • the first and second electrode layers can be located on the same side of the light-absorbing layer. When sunlight enters from the light-incident surface of the cell, it can bypass the first electrode layer, thus reducing light loss due to optical absorption and improving the photoelectric conversion efficiency of the solar energy device.
  • the insulating layer fills a first groove in at least a portion of the area where it covers the second electrode layer. Filling the first groove in the area where the insulating layer obscures the second electrode layer reduces the risk of short circuits between adjacent solar cells, thus improving the reliability of the solar device.
  • the insulating layers of adjacent solar cells are connected. Connecting the insulating layers of adjacent solar cells can further reduce the risk of short circuits between adjacent solar cells, and can also reduce the fabrication difficulty of solar devices.
  • the second groove is offset from the insulating layer. In this case, it is not necessary to process the insulating layer when processing the second groove.
  • the charge extraction component further includes a first charge transport layer located between the light-absorbing layer and the first electrode layer.
  • the first charge transport layer covers the first electrode layer located on the insulating layer, and its projection in the thickness direction lies within the insulating layer, with the thickness direction intersecting the first direction.
  • the presence of the first charge transport layer facilitates the extraction and transport of charge from the light-absorbing layer, increases the amount of charge transported to the first electrode layer, and enhances the charge transport rate to the first electrode layer, thereby further improving the photoelectric conversion efficiency of the solar cell.
  • the first charge transport layer is in contact with the insulating layer.
  • the solar cell further includes a second charge transport layer located between the insulating layer and the second electrode layer, with a light-absorbing layer covering the surface of the second charge transport layer exposed from the insulating layer.
  • the presence of the second charge transport layer facilitates the extraction and transport of charge from the light-absorbing layer, increases the amount of charge transported to the second electrode layer and the rate of charge transport to the second electrode layer, thereby further improving the photoelectric conversion efficiency of the solar cell.
  • the projections of the fourth groove and the second groove along the thickness direction of the solar cell at least partially overlap, and the thickness direction intersects the first direction. This can reduce the dead area of the solar device and improve the photoelectric conversion efficiency of the solar device.
  • the projection of the second groove along the thickness direction of the solar cell lies within the projection of the fourth groove along the thickness direction of the solar cell, and the thickness direction intersects with the first direction. This can further reduce the dead area of the solar device and improve the photoelectric conversion efficiency of the solar device.
  • the projection of the third groove along the thickness direction of the solar cell lies within the projection of the fourth groove along the thickness direction of the solar cell, and the thickness direction intersects with the first direction. This can further reduce the dead area of the solar device and improve the photoelectric conversion efficiency of the solar device.
  • the third groove is filled with an insulating material.
  • the first electrode layer is not directly connected, which can also reduce the risk of short circuits in the first electrode layer caused by the subsequent deposition of the transport layer and light-emitting layer.
  • the resistivity of the insulating layer material is ⁇ 1014 ohm ⁇ cm (abbreviated as ⁇ cm).
  • the resistivity of the insulating layer material is 1014 ⁇ cm to 1016 ⁇ cm.
  • the insulating layer is made of one or more of magnesium oxide, silicon oxide, and ceramic materials.
  • the surface of the light-absorbing layer away from the second electrode layer has a self-trapping light structure.
  • the self-trapping light structure can reduce the reflectivity of sunlight on the incident surface of the solar cell, which is beneficial to improving the photoelectric conversion efficiency of the solar cell.
  • an antireflection layer is provided on the side of the light-absorbing layer away from the second electrode layer.
  • the antireflection layer further reduces the reflectivity of sunlight on the light-receiving surface of the solar cell, increases the transmittance of sunlight on the light-receiving surface, and further improves the photoelectric conversion efficiency of the solar cell.
  • the antireflective layer is also filled within the fourth groove.
  • the light-absorbing layer includes a perovskite light-absorbing layer.
  • a perovskite solar cell can then be formed.
  • each solar cell has multiple charge-discharging components, which are spaced apart on the surface of the second electrode layer along a second direction that intersects the first direction.
  • the insulating layers in the charge-discharging components of adjacent solar cells are connected one-to-one.
  • the area ratio of the first electrode layer can be increased, promoting charge collection and further improving the photoelectric conversion efficiency of the solar cell.
  • the second direction and the first direction are perpendicular to each other.
  • the solar cell further includes electrode leads, through which the first electrode layers of multiple charge-discharging components are connected.
  • the electrode leads further facilitate charge collection by the first electrode layers in the multiple charge-discharging components, thereby improving the photoelectric conversion efficiency of the solar cell.
  • a solar cell module includes a first solar cell device and a second solar cell device respectively disposed on opposite sides of a substrate along the thickness direction, the first solar cell device and the second solar cell device being connected in series; wherein the first solar cell device and the second solar cell device include the aforementioned solar cell device.
  • the first electrode layer of the first solar device and the first electrode layer of the corresponding second solar device transmit the same charge carriers.
  • the first electrode layer of the first solar device located on one side of the substrate along its thickness direction extends along a first direction and bends to the other side of the substrate along its thickness direction, and is electrically connected to the second electrode layer of the second solar device located on the other side of the substrate along its thickness direction.
  • the second electrode layer at the other end of the first solar device along the first direction and the first electrode layer at the other end of the second solar device along the first direction are respectively provided with first busbars.
  • the first electrode layer of the first solar energy device and the first electrode layer of the second solar energy device extend along one side of the first direction
  • the second electrode layer of the first solar energy device and the second electrode layer of the second solar energy device extend along the other side of the first direction, respectively.
  • a first busbar is provided at the extension of the first electrode layer of the first solar energy device and the second electrode layer of the second solar energy device
  • a second busbar is provided at the extension of the second electrode layer of the first solar energy device and the second solar energy device, respectively.
  • the two first busbars are electrically connected and led out
  • the two second busbars are electrically connected and led out.
  • An electrical device includes the aforementioned solar energy device.
  • a power generation device comprising the aforementioned solar energy device.
  • a photovoltaic system comprising the aforementioned solar energy device.
  • Figure 1 is a top view of a solar cell according to an embodiment of this application.
  • Figure 2 is a cross-sectional view along the A-A direction in Figure 1.
  • Figure 3 is a top view of a solar energy device according to one embodiment of this application.
  • Figure 4 is a cross-sectional view along the B-B direction in Figure 3.
  • Figure 5 is a cross-sectional view along the C-C direction in Figure 3.
  • Figure 6 is a cross-sectional view along the B-B direction of Figure 3, showing the solar energy device in another embodiment.
  • Figure 7 is a cross-sectional view along the C-C direction of the solar energy device shown in Figure 3 in another embodiment.
  • Figure 8 is a top view of a solar energy device according to another embodiment of this application.
  • Figure 9 is a schematic diagram of the product structure during the fabrication of the first electrode layer in one embodiment of this application.
  • Figure 10 is a schematic diagram of the structure of a solar cell module provided in some embodiments of this application.
  • FIG 11 is a schematic diagram of the structure of a solar cell module according to one embodiment of this application.
  • Figure 12 is a structural schematic diagram of the solar cell module shown in Figure 11 from another perspective.
  • Figure 13 is a schematic diagram of the structure of a solar cell module according to another embodiment of this application.
  • Figure 14 is a structural schematic diagram of the solar cell module shown in Figure 13 from another perspective.
  • ranges disclosed in this application can be defined in the form of a lower limit and an upper limit.
  • a given range is defined by selecting a lower limit and an upper limit, which define the boundaries of the specific range.
  • Ranges defined in this way can include or exclude endpoints. Any endpoint can be included or excluded independently, and they can be combined arbitrarily; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60–120 and 80–110 are listed for a specific parameter, it is expected that ranges of 60–110 and 80–120 are also included.
  • the numerical range "a–b” represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers.
  • the numerical range "0-5" indicates that all real numbers between "0" and "5" have been listed in this article; "0-5" is simply a shortened representation of these numerical combinations.
  • a parameter is described as an integer ⁇ 2, it is equivalent to listing integers such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.
  • a parameter is described as an integer selected from “2-10", it is equivalent to listing the integers 2, 3, 4, 5, 6, 7, 8, 9, and 10.
  • step (c) indicates that step (c) may be added to the method in any order.
  • the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.
  • open-ended technical features or solutions described using terms such as "containing,” “including,” or “comprising” do not exclude additional members beyond those listed unless otherwise specified. They can be considered as providing both closed-ended features or solutions comprised of the listed members and open-ended features or solutions that include additional members beyond the listed members. For example, if A includes a1, a2, and a3, it may also include other members or exclude additional members unless otherwise specified. This can be considered as providing both the feature or solution that "A consists of a1, a2, and a3" and the feature or solution that "A includes not only a1, a2, and a3, but also other members.”
  • A such as B
  • B is a non-limiting example of A, and it can be understood that A is not limited to B.
  • the photoelectric conversion principle of a solar cell is as follows: Incident light (e.g., sunlight) enters the device, reaches the light-absorbing layer and is absorbed by it. Under the excitation of the incident light, the light-absorbing layer generates electron-hole pairs. Under the action of an electric field, the holes and electrons separate. The electrons are transferred to one electrode, while the holes are transferred to the other electrode. Subsequently, a loop is formed through the external circuit, which can be used to drive the load.
  • Incident light e.g., sunlight
  • the light-absorbing layer Under the excitation of the incident light, the light-absorbing layer generates electron-hole pairs. Under the action of an electric field, the holes and electrons separate. The electrons are transferred to one electrode, while the holes are transferred to the other electrode. Subsequently, a loop is formed through the external circuit, which can be used to drive the load.
  • the solar cell 1 includes: a charge-discharging component 11, which includes a first electrode layer 1101 and an insulating layer 1102 stacked together; a second electrode layer 12 located on the side of the insulating layer 1102 away from the first electrode layer 1101, the insulating layer 1102 covering a portion of the surface of the second electrode layer 12, and the second electrode layer 12 not covered by the insulating layer 1102 being electrically connected to the first electrode layer 1101; and a light-absorbing layer 13 covering the charge-discharging component 11 and covering at least a portion of the surface of the second electrode layer 12 not covered by the insulating layer 1102.
  • the first electrode layer 1101 and the second electrode layer 12 can be located on the same side of the light-absorbing layer 13.
  • sunlight When sunlight is incident on the light-incident surface of the cell, it can bypass the first electrode layer 1101, thereby reducing the loss of incident light due to optical absorption and improving the photoelectric conversion efficiency of the solar cell 1.
  • This solar energy device 2 includes a plurality of the aforementioned solar cells 1, which are sequentially distributed along a first direction.
  • the design of the first groove 19, the second groove 110, the third groove 21, and the fourth groove 22 allows multiple solar cells 1 to be divided and connected.
  • the first groove 19 is used to separate the second electrode layer 12 between adjacent solar cells 1
  • the third groove 21 and the fourth groove 22 are used to separate the first electrode layer 1101 and the light-absorbing layer 13 between adjacent solar cells 1, respectively
  • the second groove 110 is filled with a conductive medium to electrically connect the first electrode layer 1101 and the second electrode layer 12, thereby realizing the series connection of two adjacent solar cells 1.
  • the photoelectric conversion efficiency of the solar cell 1 can be improved through structural design. Therefore, in the solar cell device 2 of this embodiment, by arranging multiple solar cells 1 in series, the solar cell device 2 can have a high photoelectric conversion efficiency.
  • the conductive medium is the same as the material of the first electrode layer 1101.
  • the bottom of the second groove 110 is located on the surface of the second electrode layer 12 facing the light-absorbing layer 13.
  • the surface of the second electrode layer 12 facing the light-absorbing layer 13 corresponding to the bottom of the second groove 110 may be flush with the surface of the second electrode layer 12 facing the light-absorbing layer 13 of the solar cell 1.
  • the surface of the second electrode layer 12 facing the light-absorbing layer 13 corresponding to the bottom of the second groove 110 may not be flush with the surface of the second electrode layer 12 facing the light-absorbing layer 13 of the solar cell 1.
  • the surface of the second electrode layer 12 facing the light-absorbing layer 13 corresponding to the bottom of the second groove 110 is lower than the surface of the solar cell 1.
  • the second electrode layer 12 of battery 1 faces the surface of the light-absorbing layer 13.
  • the second electrode layer 12 corresponding to the bottom of the second groove 110 has a recessed structure.
  • the shape of the recessed structure is not limited. It can be a regular shape such as a rectangle, arc, trapezoid, or step, or it can be an irregular shape.
  • the recessed structure of the second electrode layer 12 corresponding to the bottom of the second groove 110 can be disconnected from the bottom of the light-absorbing layer 13. In this way, the conductive medium fills the disconnected recessed structure and connects it with the second electrode layers 12 on both sides to electrically connect the first electrode layer 1101 of solar cell 1 with the second electrode layer 12 of adjacent solar cell 1.
  • the projection of the third groove 21 on the insulating layer 1102 along the thickness direction of the charge-exiting component 11 and the projection of the fourth groove 22 on the insulating layer 1102 along the thickness direction of the charge-exiting component 11 completely overlap.
  • the fourth groove 22 can penetrate the first electrode layer 1101 of the adjacent solar cell, and the fourth groove 22 also separates the first electrode layer 1101 of the adjacent solar cell.
  • the thickness direction intersects with the first direction; alternatively, the thickness direction is perpendicular to the first direction.
  • Figures 4 and 5 represent cross-sectional views along the B-B and C-C directions, respectively, of the solar cell device in one embodiment shown in Figure 3. Since the insulating layer 1102 is located on a portion of the surface of the second electrode layer 12 in the solar cell 1, and the first electrode layer 1101 is located on the surface of the insulating layer 1102 away from the second electrode layer 12, the B-B and C-C directions in Figure 3 have different cross-sectional views; that is, Figures 4 and 5 are different. Furthermore, it is understood that the purpose of separating the first electrode layers 1101 is to prevent short circuits between adjacent solar cells.
  • the filling material penetrating the first electrode layer 1101 cannot cause a short circuit between adjacent solar cells.
  • it can be filled with insulating material, semiconductor material, or no filling material (such as air insulation).
  • the insulating layer 1102 is located on a portion of the surface of the second electrode layer 12, and the first electrode layer 1101 is located on the surface of the insulating layer 1102 away from the second electrode layer 12, the B-B and C-C directions of Figure 3 have different cross-sectional views, that is, Figures 6 and 7 are different.
  • first groove 19, the second groove 110, the third groove 21, and the fourth groove 22 can be obtained by laser scribing. It is further understood that the first groove 19, the second groove 110, the third groove 21, and the fourth groove 22 can also be obtained by other feasible methods.
  • the first groove 19 can be obtained by mask fabrication, that is, the first groove 19 is pre-masked with a mask to form the second electrode layer 12, and then the corresponding mask is removed to form the first groove 19.
  • the width of the first groove 19 along the first direction can be from 1 ⁇ m to 1000 ⁇ m, for example, from 10 ⁇ m to 80 ⁇ m or from 50 ⁇ m to 200 ⁇ m.
  • the width of the second groove 110 along the first direction can be from 1 ⁇ m to 1000 ⁇ m, for example, from 10 ⁇ m to 80 ⁇ m or from 50 ⁇ m to 200 ⁇ m.
  • the width of the third groove 21 along the first direction can be from 1 ⁇ m to 1000 ⁇ m, for example, from 10 ⁇ m to 80 ⁇ m or from 50 ⁇ m to 200 ⁇ m.
  • the width of the fourth groove 22 along the first direction can be from 1 ⁇ m to 1000 ⁇ m, for example, from 10 ⁇ m to 80 ⁇ m or from 50 ⁇ m to 200 ⁇ m.
  • the insulating layer 1102 fills the first groove 19 in at least a portion of the area covered by the insulating layer 1102 of the second electrode layer 12.
  • the first groove 19 can be formed on the second electrode layer 12 first by means such as laser scribing.
  • the material of the insulating layer 1102 fills the first groove 19, thereby filling the first groove 19 in the area where the insulating layer 1102 covers the second electrode layer 12.
  • the filling of the first groove 19 in the area where the insulating layer 1102 covers the second electrode layer 12 can reduce the risk of short circuits between adjacent solar cells 1 and improve the reliability of the solar device 2.
  • the insulating layers 1102 of adjacent solar cells 1 are connected. Connecting the insulating layers 1102 of adjacent solar cells 1 can further reduce the risk of short circuits between adjacent solar cells 1, and also reduce the processing difficulty of the solar device 2. For example, in the processing of the solar device 2, methods such as laser etching are typically used to form the layer. When processing the second groove 110, laser etching of the insulating layer 1102 is not required, thus reducing the processing difficulty of the solar device 2. Furthermore, the material of the insulating layer 1102 typically includes metal oxide materials. Laser etching of these metal oxides is quite difficult; therefore, in this embodiment, not requiring laser etching of the insulating layer 1102 reduces the processing difficulty of the solar device 2. In other embodiments, the insulating layers 1102 of adjacent solar cells 1 can also be separated.
  • the second groove 110 is offset from the insulating layer 1102. In this case, the insulating layer 1102 does not need to be processed when processing the second groove 110.
  • the insulating layer 1102 is located on a portion of the surface of the second electrode layer 12.
  • a first electrode layer 1101 offset from the insulating layer 1102 is provided at position C-C. Therefore, in Figure 5, the first electrode layer 1101 in the second groove 110 represents the first electrode layer 1101 offset from the insulating layer 1102.
  • a patterned first electrode layer 1101 can be obtained by fabricating a patterned first electrode layer 1101, such that part of the first electrode layer 1101 is located on the insulating layer 1102, and part of the first electrode layer 1101 is located in the second groove 110.
  • the charge extraction component 11 further includes a first charge transport layer 15, which is located between the light-absorbing layer 13 and the first electrode layer 1101, and covers the first electrode layer 1101 located on the insulating layer 1102.
  • the first charge transport layer 15 facilitates the extraction and transport of charge in the light-absorbing layer 13, increases the amount of charge transported to the first electrode layer 1101 and the rate of charge transport to the first electrode layer 1101, thereby further improving the photoelectric conversion efficiency of the solar cell 1.
  • the first charge transport layer 15 is in contact with the insulating layer 1102.
  • the first charge transport layer 15 may include an electron transport layer or a hole transport layer.
  • the first charge transport layer 15 transports electrons generated in the light-absorbing layer 13 to the first electrode layer 1101; when the first charge transport layer 15 includes a hole transport layer, the first charge transport layer 15 transports holes generated in the light-absorbing layer 13 to the first electrode layer 1101.
  • the first electrode layer 1101 located on the insulating layer 1102 is situated on a portion of the surface of the insulating layer 1102.
  • the projection of the first charge transport layer 15 in the thickness direction of the insulating layer 1102 along the two edges in the first direction is flush with the two edges of the insulating layer 1102 along the first direction. That is, the projection of the first charge transport layer 15 in the thickness direction is located within the insulating layer 1102, and the thickness direction intersects with the first direction.
  • the thickness direction and the first direction are perpendicular to each other. In this case, the first electrode layer 1101 can be more completely covered by the first charge transport layer 15 and the insulating layer 1102, promoting more sufficient transfer of charge from the first charge transport layer 15 to the first electrode layer 1101.
  • the two edges of the projection of the first charge transport layer 15 in the thickness direction of the insulating layer 1102 along the first direction may be flush with one of the two edges of the insulating layer 1102 along the first direction, while the other edge may not be flush, or both edges may not be flush.
  • Unfair edges may include one edge of the projection of the first charge transport layer 15 in the thickness direction of the insulating layer 1102 extending beyond the corresponding edge of the insulating layer 1102 along the first direction, or the projection of the first charge transport layer 15 in the thickness direction of the insulating layer 1102 being closer to the corresponding edge of the first electrode layer 1101 in the first direction than the corresponding edge of the insulating layer 1102 along the first direction.
  • the first electrode layer 1101 located on the insulating layer 1102 is located on the entire surface of the insulating layer 1102. That is, the two edges of the projection of the first electrode layer 1101 in the thickness direction of the insulating layer 1102 along the first direction are flush with the two edges of the insulating layer 1102 along the first direction. In this case, the projection of the first charge transport layer 15 in the thickness direction extends beyond the insulating layer 1102, but can prevent the first electrode layer 1101 from directly contacting the light-absorbing layer 13 to reduce leakage current and corrosion that may be caused by contact between the two.
  • the solar cell 1 further includes a second charge transport layer 16, which is located between the light-absorbing layer 13 and the second electrode layer 12.
  • the second charge transport layer 16 facilitates the extraction and transport of charge in the light-absorbing layer 13, increases the amount of charge transported to the second electrode layer 12, and increases the rate of charge transport to the second electrode layer 12, thereby further improving the photoelectric conversion efficiency of the solar cell 1.
  • the second charge transport layer 16 can be an electron transport layer or may include a hole transport layer. When the second charge transport layer 16 includes an electron transport layer, it transports electrons generated in the light-absorbing layer 13 to the second electrode layer 12; when the second charge transport layer 16 includes a hole transport layer, it transports holes generated in the light-absorbing layer 13 to the second electrode layer 12.
  • the second charge transport layer 16 is partially located between the insulating layer 1102 and the second electrode layer 12, and the light-absorbing layer 13 covers the surface of the second charge transport layer 16 exposed from the insulating layer 1102. In this way, the second charge transport layer 16 can be integrally fabricated without the need to remove the second charge transport layer 16 beneath the insulating layer 1102 using a mask or laser etching, thus simplifying the fabrication process. It is understood that the second charge transport layer 16 is located on the surface of the second electrode layer 12, and the insulating layer 1102 is located on a portion of the surface of the second charge transport layer 16.
  • first charge transport layer 15 and the second charge transport layer 16 coexist, one of them includes an electron transport layer and the other includes a hole transport layer, or one of them includes a hole transport layer and the other includes an electron transport layer.
  • first charge transport layer 15 includes an electron transport layer and the second charge transport layer 16 includes a hole transport layer.
  • first charge transport layer 15 includes a hole transport layer and the second charge transport layer 16 includes an electron transport layer.
  • the material of the electron transport layer may include, but is not limited to, one or more of the following materials and their derivatives: imide compounds, quinone compounds, fullerenes and their derivatives, metal oxides, metal sulfides, metal fluorides, cyano-containing polyphenylacetylene, boron-containing polymers, copper bath, red phenanthroline, aluminum hydroxyquinoline, and oxadiazole compounds.
  • fullerenes and their derivatives include one or more of fullerene C60, fullerene C70, PCBM ([6,6]-phenyl-C61-butyrate methyl ester), [6,6]-phenyl-C71-butyrate methyl ester (PC71BM), etc.; imide compounds include one or more of perylene imide materials, naphthylimide materials, phthalimide, succinimide, N-bromosuccinimide, glutarimide or maleimide, etc.; the metal elements in the metal oxides may include one or more of Mg, Ni, Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga and Cr, such as one or more of tin oxide (SnO 2 ), zinc oxide (ZnO), titanium oxide.
  • PCBM [6,6]-phenyl-C61-butyrate methyl ester
  • Metal sulfides such as indium sulfide or zinc sulfide belong to one or more of the following fluorides: lithium fluoride (LiF), sodium fluoride, magnesium fluoride ( MgF2 ), and calcium fluoride ( CaF2 ).
  • the material of the hole transport layer may include, but is not limited to, one or more of the following materials and their derivatives: 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD), polytriarylamine (PTAA), nickel oxide (NiO x ), poly3,4-ethylenedioxythiophene:polystyrene sulfonate (PEDOT:PSS), poly3-hexylthiophene (P3HT), WO3 , phosphate monomers and their polymers, carbazole monomers and their polymers, sulfonic acid monomers and their polymers, triphenylamine monomers and their polymers, aromatic monomers and their polymers, cuprous iodide and cuprous thiocyanate, etc., which are materials capable of transporting holes and blocking electrons.
  • Spiro-OMeTAD poly
  • the first groove 19 separates the second charge transport layer 16 of the adjacent solar cell 1.
  • the projections of the fourth groove 22 and the second groove 110 along the thickness direction of the solar cell 1 at least partially overlap, and the thickness direction is perpendicular to the first direction. This can reduce the dead area of the solar device and improve the photoelectric conversion efficiency of the solar device.
  • the projection of the second groove 110 along the thickness direction of the solar cell 1 lies within the projection of the fourth groove 22 along the thickness direction of the solar cell 1, and the thickness direction is perpendicular to the first direction. This can further reduce the dead area of the solar device and improve the photoelectric conversion efficiency of the solar device.
  • the projection of the third groove 21 along the thickness direction of the solar cell 1 lies within the projection of the fourth groove 22 along the thickness direction of the solar cell 1, and the thickness direction intersects with the first direction.
  • the thickness direction and the first direction are perpendicular to each other. This can further reduce the dead area of the solar device and improve the photoelectric conversion efficiency of the solar device.
  • the third groove 21 is filled with an insulating material.
  • the first electrode layer 1101 is not directly connected, which can also reduce the risk of short circuits in the first electrode layer 1101 caused by the subsequent deposition of the first charge transport layer 15 and the light-absorbing layer 13.
  • the resistivity of the insulating layer 1102 material is ⁇ 1014 ⁇ cm.
  • the resistivity of the insulating layer 1102 material can be 1014 ⁇ cm, 2 ⁇ 1014 ⁇ cm, 5 ⁇ 1014 ⁇ cm, 8 ⁇ 1014 ⁇ cm, 1015 ⁇ cm, 2 ⁇ 1015 ⁇ cm, 5 ⁇ 1015 ⁇ cm, 8 ⁇ 1015 ⁇ cm, 1016 ⁇ cm, 5 ⁇ 1016 ⁇ cm, 1017 ⁇ cm, or a range between any two of the above values.
  • the resistivity of the insulating layer 1102 material is 1014 ⁇ cm to 1016 ⁇ cm.
  • the insulating layer 1102 material includes one or more of magnesium oxide, silicon oxide, and ceramic materials; optionally, the ceramic material includes one or more of alumina and zirconium oxide.
  • the material of the insulating layer 1102 may also be selected from polymers of polyolefins (e.g., polystyrene or polyethylene) and polyacrylates (e.g., polymethyl methacrylate).
  • the thickness of the insulating layer 1102 may be from 20 nm to 1000 nm, for example, from 50 nm to 500 nm or from 100 nm to 300 nm.
  • the insulating material can be selected from the materials of the insulating layer 1102 listed above.
  • the surface of the light-absorbing layer 13 away from the second electrode layer 12 has a self-trapped light structure.
  • a self-trapped light structure refers to a surface structure composed of protrusions or depressions at the micrometer or nanometer scale. This structure can utilize phenomena such as light refraction, reflection, scattering, and interference to change the propagation path of light on the surface of the solar cell, increase the residence time of light inside the solar cell, effectively reduce light reflection, and thus improve the light absorption rate.
  • the self-trapped light structure can reduce the reflectivity of sunlight on the incident surface of the solar cell 1, increase light scattering and coupling, and is beneficial to improving the photoelectric conversion efficiency of the solar cell 1. It is understood that the self-trapped light structure can include a pyramidal textured surface structure.
  • the self-trapped light structure can be fabricated by laser processing or chemical processing.
  • an antireflection layer 17 is disposed on the side of the light-absorbing layer 13 away from the second electrode layer 12.
  • the antireflection layer also known as an anti-reflection film or anti-reflective coating, primarily functions to reduce or eliminate reflected light from the cell surface, thereby increasing light transmittance and reducing or eliminating stray light in the system. It is understood that the antireflection layer 17 can further reduce the reflectivity of sunlight on the light-incident surface of the solar cell 1, increase the transmittance of sunlight on the light-incident surface of the cell, and further improve the photoelectric conversion efficiency of the solar cell 1.
  • the antireflection layer 17 can be formed by deposition on the surface of the light-absorbing layer 13 away from the second electrode layer 12, and/or by adhering an antireflection film to the surface of the light-absorbing layer 13 away from the second electrode layer 12 to form the antireflection layer 17.
  • the material of the antireflective coating 17 fills the fourth groove 22, meaning that the antireflective coating 17 is also filled within the fourth groove 22. Furthermore, it is understandable that the antireflective coating 17 can also be separated by the fourth groove 22.
  • the antireflective layer 17 may be made of one or more of titanium dioxide, silicon dioxide, zinc sulfide, zinc selenide, silicone resin, and polyacrylic resin.
  • the light-absorbing layer 13 includes a perovskite light-absorbing layer, in which case a perovskite solar cell can be formed.
  • the light-absorbing layer 13 may also include a cadmium telluride light-absorbing layer, a copper indium gallium selenide light-absorbing layer, a gallium arsenide light-absorbing layer, an electron donor-electron acceptor active layer, etc., in which case corresponding cadmium telluride solar cells, copper indium gallium selenide solar cells, gallium arsenide solar cells, organic thin-film solar cells, etc. can be formed.
  • each solar cell 1 has multiple charge-discharging components 11, which are spaced apart on the surface of the second electrode layer 12 along a second direction.
  • the second direction intersects the first direction, and the insulating layers 1102 in the charge-discharging components 11 of adjacent solar cells 1 are connected one-to-one.
  • the arrangement of multiple charge-discharging components 11 increases the area ratio of the first electrode layer 1101, promotes charge collection, and further improves the photoelectric conversion efficiency of the solar cell 1.
  • the arrangement of multiple charge-discharging components 11 allows for sufficient charge collection on the large-area solar device 2, which is beneficial for the development of the large-area solar device 2.
  • the solar cell 1 also includes electrode leads 18, through which the first electrode layers 1101 of the multiple charge-discharging components 11 are connected.
  • the arrangement of electrode leads 18 further promotes charge collection by the first electrode layers 1101 in the multiple charge-discharging components 11, improving the photoelectric conversion efficiency of the solar cell 1.
  • the material of the electrode leads 18 can be the same as that of the first electrode layer 1101.
  • the second direction and the first direction are perpendicular to each other. Referring to Figure 8, as an example, Y represents the first direction, X represents the second direction, and the second direction and the first direction are perpendicular to each other.
  • the one-to-one connection of the insulating layers 1102 in the charge output components 11 of adjacent solar cells 1 indicates that the number of insulating layers 1102 in adjacent solar cells 1 is the same, and the insulating layers 1102 in adjacent solar cells 1 are connected in a corresponding manner in the first direction.
  • first direction, the second direction, and the thickness direction intersect each other, or alternatively, the first direction, the second direction, and the thickness direction are perpendicular to each other.
  • the insulating layer 1102 is located on a portion of the surface of the second electrode layer 12, and the first electrode layer 1101 is located on the surface of the insulating layer 1102 away from the second electrode layer 12.
  • the area ratio of the first electrode layer 1101 can be increased, promoting charge collection and further improving the photoelectric conversion efficiency of the solar cell 1. It is understood that as the cell area increases, the setting of multiple charge-discharging components 11 can promote charge discharge from the large-area light-absorbing layer and improve the photoelectric conversion efficiency of the large-area cell.
  • the solar cell 1 also includes electrode leads 18, through which the first electrode layers 1101 of the plurality of charge-discharging components 11 are connected.
  • the electrode leads 18 further facilitate charge collection by the first electrode layers 1101 in the plurality of charge-discharging components 11, thereby improving the photoelectric conversion efficiency of the solar cell 1.
  • the electrode leads 18 can be made of the same material as the first electrode layers 1101.
  • the solar cell 1 includes three charge-discharging components 11, and the first electrode layer 1101 of the three charge-discharging components 11 is connected by electrode leads 18. It is understood that the number of charge-discharging components 11 in the solar cell 1 can be appropriately selected according to actual design requirements. For example, the number of charge-discharging components 11 in the solar cell 1 can be 2, 4, 5, 6, etc.
  • the solar cell 1 also includes a substrate 14, which is located on the surface of the second electrode layer 12 away from the light-absorbing layer 13.
  • the substrate 14 can be a PCB ceramic board, plastic, silicon, silicon oxide, silicon carbide, etc.
  • the substrate 14 can be a rigid insulating substrate 14.
  • the surface of the light-absorbing layer 13 away from the substrate 14 can be used as the light-incident surface.
  • the solar cell 1 when selecting the substrate 14, there is no need to have special limitations on the light transmittance of the substrate 14. That is, when a substrate 14 with poor light transmittance is selected, the solar cell 1 can also obtain a high photoelectric conversion efficiency.
  • both surfaces of the solar cell 1 can serve as light-incident surfaces.
  • the material of the second electrode layer 12 is selected from one or more of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), and indium tungsten oxide (IWO).
  • the material of the second electrode layer 12 comprises at least one of a conductive metal, a conductive nonmetal, and a conductive oxide.
  • the conductive metal is selected from one or more of Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, and their alloys.
  • the conductive nonmetal is selected from C.
  • the conductive oxide is selected from one or more of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), and indium tungsten oxide (IWO).
  • the first electrode layer 1101 may also be a transparent electrode layer, in which case the material of the first electrode layer 1101 is selected from at least one of fluorine-doped tin oxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), indium zinc oxide (IZO), and indium tungsten oxide (IWO).
  • FTO fluorine-doped tin oxide
  • ITO indium tin oxide
  • AZO aluminum-doped zinc oxide
  • BZO boron-doped zinc oxide
  • IZO indium zinc oxide
  • IWO indium tungsten oxide
  • the solar cell 1 further includes a metal fluoride layer.
  • the metal fluoride layer is located between the electron transport layer and the first electrode layer 1101.
  • the metal fluoride layer is located between the electron transport layer and the second electrode layer 12. The presence of the metal fluoride layer can promote electron extraction, thereby improving the photoelectric conversion efficiency of the perovskite photovoltaic module.
  • the solar cell 1 can be provided with a modification layer of suitable energy level, which can play one or more of the following roles: lowering the energy level barrier, promoting energy level matching, improving charge extraction efficiency, passivating interface defect states, protecting the light-absorbing layer 13, suppressing the oxidation and decomposition of the cell by water molecules and oxygen, improving photoelectric conversion efficiency, and improving cell stability.
  • a modification layer of suitable energy level which can play one or more of the following roles: lowering the energy level barrier, promoting energy level matching, improving charge extraction efficiency, passivating interface defect states, protecting the light-absorbing layer 13, suppressing the oxidation and decomposition of the cell by water molecules and oxygen, improving photoelectric conversion efficiency, and improving cell stability.
  • the type of modification layer may include a modification layer between the hole transport layer and the anode, a modification layer between the electron transport layer and the cathode, a modification layer between the hole transport layer and the light-absorbing layer 13, and a modification layer between the electron transport layer and the light-absorbing layer 13.
  • materials that can be used for the modification layer in the perovskite solar cell 1 may include, but are not limited to: BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), tin oxide, Cu2O , NiO, AZO, TiO2 , etc.
  • the perovskite light-absorbing layer comprises materials with the chemical formula ABX3 or A2CDX6 . Wherein :
  • B is an inorganic, organic, or mixed organic-inorganic divalent cation, including at least one of lead, tin, zinc, titanium, antimony, bismuth, nickel, iron, cobalt, silver, copper, gallium, germanium, magnesium, calcium, indium, aluminum, manganese, chromium, molybdenum, and europium divalent cations, and optionally at least one of divalent metal ions Pb2+ and Sn2+ .
  • C is an inorganic, organic, or mixed organic-inorganic cation, optionally a monovalent metal ion such as Ag + , Cs + , K + , and Rb + .
  • D is an inorganic, organic, or organic-inorganic mixed cation, optionally a trivalent metal ion such as bismuth cation Bi 3+ , antimony cation Sb 3+ , iron ion Fe 3+ , copper ion Cu 3+ , indium cation In 3+ , etc.
  • a trivalent metal ion such as bismuth cation Bi 3+ , antimony cation Sb 3+ , iron ion Fe 3+ , copper ion Cu 3+ , indium cation In 3+ , etc.
  • X is an inorganic, organic, or organic-inorganic mixed anion, optionally one or more of halogen anions and halide-like anions, such as fluoride ( F- ), chloride ( Cl- ), bromide ( Br- ), iodide ( I- ), thiocyanate ( SCN- ), formate ( HCOO- ), ( CH3COO- ), trifluoroacetate ( CF3COO- ), methanesulfonate ( CH3SO3- ), trifluoromethanesulfonate ( CF3SO3- ), cyanide ( CN- ) , and further optionally bromide ( Br- ) or iodide ( I- ) .
  • halogen anions and halide-like anions such as fluoride ( F- ), chloride ( Cl- ), bromide ( Br- ), iodide ( I- ), thiocyanate ( SCN- ), formate (
  • the perovskite material in the perovskite light-absorbing layer may be selected from Cs x1 FA 1-x1 PbX 3 , Cs x1 MA 1-x1 PbX 3 , Cs m FA n MA 1-mn PbX 3 , CsPbX 3 , MAPbX 3 , FAPbX 3 , Cs x1 FA 1-x1 Pb x2 Sn 1-x2 X 3 , Cs x1 FA 1-x1 Pb x2 Sn 1-x2 X 3 , Cs m FA n MA 1-mn Pb x2 Sn 1-x2 X 3 , CsPb x2 Sn 1-x2 X 3 , MAPb x2 Sn 1-x2 X 3 , and FAPb x2 Sn 1-x2 X 3.
  • perovskite materials include one or more of CH8I3N2Pb ( FAPbI3 ), Cs0.05 ( FA0.83MA0.17 ) 0.95Pb ( I0.83Br0.17 ) 3 , CsPbBr3 , CsPbI3 , Cs0.05FA0.95PbI3 , and MA0.2FA0.8PbI3 .
  • the band gap of the perovskite absorbing layer is 1.2 eV to 2.3 eV.
  • the band gap of the perovskite absorbing layer 13 is 1.2 eV, 1.3 eV, 1.4 eV, 1.5 eV, 1.6 eV, 1.7 eV, 1.8 eV, 1.9 eV, 2 eV, 2.1 eV, 2.2 eV, 2.3 eV, or any two of the above values.
  • the band gap of the perovskite absorbing layer 13 is within the above range, it can have a high visible light absorption efficiency.
  • Another embodiment of this application provides a method for fabricating the above-described solar energy device 2. Taking the simultaneous inclusion of a first charge transport layer 15 and a second charge transport layer 16 as an example, the method for fabricating this solar energy device 2 includes the following steps:
  • a second charge transport layer 16 is prepared on the second electrode layer 12.
  • a first groove 19 is prepared, which extends through the second charge transport layer 16 and the second electrode layer 12 from the thickness direction of the second electrode layer 12 to separate the second charge transport layer 16 and the second electrode layer 12 of adjacent solar cells 1.
  • An insulating layer 1102 is prepared on a portion of the surface of the second electrode layer 12.
  • a second groove 110 is formed in the region of the second electrode layer 12 exposed from the insulating layer 1102, and the second groove 110 penetrates the second charge transport layer 16.
  • a first electrode layer 1101 is fabricated, with a portion of the first electrode layer 1101 located on the surface of the insulating layer 1102 away from the second electrode layer 12. A portion of the first electrode layer 1101 fills the second groove 110 to connect with the second electrode layer 12.
  • the structure of the product at this point is shown in Figure 7. It can be understood that after fabricating the first groove 19, a portion of the substrate 14 is exposed from the first groove 19. The first electrode layer 1101, offset from the insulating layer 1102, fills the second groove 110, and contacts the second electrode layer 12 in the second groove 110.
  • a first charge transport layer 15 is formed above the first electrode layer 1101 on the insulating layer 1102, and the first charge transport layer 15 covers the first electrode layer 1101.
  • a perovskite layer is prepared such that the light-absorbing layer 13 covers the surface of the first charge transport layer 15, the first electrode layer 1101 exposed from the first charge transport layer 15, and the second charge transport layer 16.
  • a third groove 21 and a fourth groove 22 are prepared.
  • the third groove 21 penetrates the first charge transport layer 15 and the first electrode layer 1101, and the fourth groove 22 penetrates the light-absorbing layer 13.
  • Multiple adjacent solar cells 1 can be formed on the solar device 2 through the third groove 21 and the fourth groove 22.
  • the solar cell module 3 includes a first solar device 2-1 and a second solar device 2-2 respectively disposed on opposite sides of the substrate 14 along the thickness direction.
  • the first solar device 2-1 and the second solar device 2-2 are connected in series.
  • the structure of the first solar device 2-1 and the second solar device 2-2 is the same as that of the solar device 2 described above.
  • the solar cell module 3 can absorb light energy from both the front and back sides simultaneously. In addition to incident light, it can also make full use of reflected and diffused light, improve light utilization, reduce reflection loss, and thus convert light energy into electrical energy more efficiently, thereby improving power generation efficiency.
  • the light-absorbing layer 13 of the first solar energy device 2-1 and the second solar energy device 2-2 are both located on the light-incident side, and the first electrode layer 1101 and the second electrode layer 13 are both located on the back side of the light-absorbing layer 13, light can be directly absorbed by the light-absorbing layer 13 regardless of which side of the solar cell module 3 is incident on. This can effectively reduce optical parasitic losses, improve the efficiency limit of the solar cell module 3, and thus improve the output current and photoelectric conversion efficiency of the solar cell module 3.
  • the charge carriers transported from the first electrode layer 1101 of the first solar device 2-1 and the first electrode layer 1101 of the second solar device 2-2 are the same.
  • the first solar device 2-1 and the second solar device 2-2 form a series connection, which can improve the output voltage of the solar cell module 3.
  • the first electrode layer 1101 of the first solar device 2-1 located on one side of the substrate 14 along its thickness direction extends along the first direction and bends at the edge of the substrate 14 to the other side of the substrate 14 along its thickness direction, and is electrically connected to the second electrode layer 12 of the second solar device 2-2 located on the other side of the substrate 14 along its thickness direction.
  • first busbars 4 are respectively provided at the second electrode layer 12 at the other end of the first solar device 2-1 along the first direction and the first electrode layer 1101 at the other end of the second solar device 2-2 along the first direction, one as a positive electrode and the other as a negative electrode, so that the positive and negative electrodes of the solar cell module 3 can be led out respectively.
  • the second electrode layer 12 of the first solar cell device 2-1 located on one side of the substrate 14 along its thickness direction can extend along the first direction and bend at the edge of the substrate 14 to the other side of the substrate 14 along its thickness direction, and be electrically connected to the first electrode layer 1101 of the second solar cell device 2-2 located on the other side of the substrate 14 along its thickness direction.
  • first busbars 4 are respectively provided at the other end of the first electrode layer 1101 of the first solar cell device 2-1 along the second direction and the other end of the second electrode layer 12 of the second solar cell device 2-2 along the second direction, with one serving as the positive electrode and the other as the negative electrode, so that the positive and negative electrodes of the solar cell module 3 can be led out respectively. It can be further understood that the bending at the edge of the substrate 14 can also be achieved by connecting the corresponding electrode layers through the first busbars 4.
  • the first electrode layer 1101 of the first solar device 2-1 located on one side of the substrate 14 along its thickness direction extends along one side of the first direction.
  • the second electrode layer 12 of the first solar device 2-1 extends along the other side of the first direction.
  • the first electrode layer 1101 of the second solar device 2-2 located on the other side of the substrate 14 along its thickness direction extends along the same side as the extension direction of the first electrode layer 1101 of the first solar device 2-1.
  • the second electrode layer 12 of the second solar device 2-2 extends along the same side as the extension direction of the second electrode layer 12 of the first solar device 2-1.
  • a first busbar 4 is provided at the extension of the first electrode layer 1101 of the first solar device 2-1 and the second solar device 2-2, respectively.
  • a second busbar 5 is provided at the extension of the second electrode layer 12 of the first solar device 2-1 and the second solar device 2-2, respectively.
  • the first solar device 2-1 and the second solar device 2-2 can be led out separately.
  • the first solar device 2-1 and the second solar device 2-2 can be connected in parallel by connecting the first busbar 4 and the second busbar 5 respectively, thereby increasing the output current of the solar cell module 3.
  • the first busbar 4 and the second busbar 5 can also be led out separately, thereby enabling the first solar device 2-1 and the second solar device 2-2 to be independently connected, allowing for flexible adjustment of the voltage or current of the solar cell module 3.
  • the band gap of the light-absorbing layer 13 of the first solar device 2-1 is different from the band gap of the light-absorbing layer 13 of the second solar device 2-2.
  • the band gap also known as the energy gap or band width, is the energy difference between the lowest point of the valence band and the highest point of the valence band.
  • the band gap of the light-absorbing layer 13 can affect the energy range of photons absorbed by the light-absorbing layer 13.
  • the band gap measurement method may include: first, obtaining an ultraviolet absorption curve by ultraviolet absorption spectroscopy; then calculating the band gap of the light-absorbing layer 40 using the Tauc equation.
  • the current of the two solar devices will affect each other.
  • the current of the solar device being too large, too small, or even having no current will affect the output current of the entire solar cell module 3. Therefore, the current of the first solar device 2-1 and the second solar device 2-2 must be matched with each other.
  • the light-absorbing layers 13 of the first solar device 2-1 and the second solar device 2-2 in the embodiment of this application have different band gaps.
  • the band gaps of the two can be adjusted according to the intensity and amount of light incident, so that the first solar device 2-1 and the second solar device 2-2 connected in series can form current matching, which is beneficial to improving the stability and reliability of the solar cell module 3.
  • the first solar energy device 2-1 faces the strong light side
  • the second solar energy device 2-2 faces the weak light side.
  • the band gap of the light-absorbing layer 13 of the first solar energy device 2-1 is larger than the band gap of the light-absorbing layer of the second solar energy device 2-2.
  • the band gap of the light-absorbing layer 13 When the band gap of the light-absorbing layer 13 is small, it means that the light-absorbing layer 13 can absorb photons with lower energy. Since the energy of light is inversely proportional to the wavelength, the smaller the band gap of the light-absorbing layer 13, the wider the wavelength range of light that the light-absorbing layer 13 can absorb. Conversely, when the band gap of the light-absorbing layer 13 is large, it means that the light-absorbing layer 13 can only absorb photons with higher energy, that is, it can only absorb light with shorter wavelengths. Therefore, the larger the band gap of the light-absorbing layer 13, the smaller the wavelength range of light that the light-absorbing layer 13 can absorb.
  • the strong light side typically refers to the side where light directly illuminates an object, resulting in dense and intense light.
  • the weak light side refers to the side where light is weaker or indirectly illuminates an object, usually due to light being blocked or reflected, leading to diffused light and lower intensity.
  • the first solar cell device 2-1 located on the strong light side, receives more photons than the second solar cell device 2-2, located on the weak light side. If the first solar cell device 2-1 absorbs all the photons from the strong light side, the second solar cell device 2-2 will only absorb a few photons, or even none at all. This will result in a very small or nonexistent current generated by the second solar cell device 2-2. Since the first and second solar cell devices 2-1 are connected in series, an excessively small current from the second solar cell device 2-2 may cause an open circuit in the solar cell module 3, affecting the photoelectric conversion efficiency of the solar cell 100.
  • the band gap of the light-absorbing layer 13 of the first solar device 2-1 facing the strong light side is larger than the band gap of the light-absorbing layer 13 of the second solar device 2-2 facing the weak light side.
  • This allows the first solar device 2-1 to absorb only a portion of light within a smaller wavelength range, while the second solar device 2-2 absorbs light within a larger wavelength range.
  • This ensures that the second solar device 2-2 can at least absorb light within the wavelength range that the first solar device 2-1 cannot absorb, reducing the possibility of the second solar device 2-2 failing to absorb light and thus failing to generate current.
  • the second solar device 2-2 may face the strong light side and the first solar device 2-1 may face the weak light side, as long as the band gap of the light-absorbing layer 13 of the sub-cell facing the strong light side is greater than the band gap of the light-absorbing layer 13 of the sub-cell facing the weak light side.
  • the band gap of the light-absorbing layer 13 of the first solar device 2-1 is between 1.7 eV (electron volts) and 1.8 eV.
  • the band gap of the light-absorbing layer 13 of the second solar device 2-2 is between 1.2 eV and 1.3 eV.
  • bandgap selection ranges are provided for the first solar cell device 2-1 and the second solar cell device 2-2, respectively.
  • This allows the bandgap of the light-absorbing layer 13 to be selected according to the wavelength range of the actual incident light, enabling current matching between the first solar cell device 2-1 and the second solar cell device 2-2 facing the strong light side and the weak light side, respectively.
  • this improves the absorption and utilization of the spectrum, further enhancing the efficiency of the solar cell module 3.
  • the band gap of the light-absorbing layer 13 of the first solar energy device 2-1 facing the strong light side can be, for example, 1.70 eV, 1.71 eV, 1.72 eV, 1.73 eV, 1.74 eV, 1.75 eV, 1.76 eV, 1.77 eV, 1.78 eV, 1.79 eV, 1.80 eV, etc.
  • the band gap of the light-absorbing layer 13 of the second solar energy device 2-2 facing the weak light side can be, for example, 1.20 eV, 1.21 eV, 1.22 eV, 1.23 eV, 1.24 eV, 1.25 eV, 1.26 eV, 1.27 eV, 1.28 eV, 1.29 eV, 1.30 eV, etc.
  • the material of the light-absorbing layer 13 of the first solar device 2-1 includes, but is not limited to, a wide-bandgap perovskite light-absorbing layer, exemplarily including the material shown in APbI y Br 3-y , wherein A is defined as described above, 1 ⁇ y ⁇ 3.
  • the material of the light-absorbing layer 13 of the second solar device 2-2 includes, but is not limited to, a perovskite light-absorbing layer, a cadmium telluride light-absorbing layer, a gallium arsenide light-absorbing layer, and a copper indium gallium selenide light-absorbing layer.
  • the perovskite material in the perovskite light-absorbing layer may be selected from one or more of Cs x1 FA 1-x1 Pb x2 Sn 1-x2 X 3 , Cs x1 FA 1-x1 Pb x2 Sn 1-x2 X 3 , Cs m FA n MA 1-mn Pb x2 Sn 1-x2 X 3 , CsPb x2 Sn 1-x2 X 3 , MAPb x2 Sn 1-x2 X 3 and FAPb x2 Sn 1-x2 X 3 , wherein 0 ⁇ x1 ⁇ 1, 0 ⁇ x2 ⁇ 1, 0 ⁇ m ⁇ 1, 0 ⁇ n ⁇ 1.
  • perovskite materials include one or more of the following: FAPb 0.5 Sn 0.5 I 3 , Cs 0.05 FA 0.95 Pb 0.5 Sn 0.5 I 3 , Cs 0.2 FA 0.8 Pb 0.5 Sn 0.5 I 3 , and Cs 0.25 FA 0.75 Pb 0.5 Sn 0.5 I 3 .
  • This electrical device includes one or more of the aforementioned solar cell 1 and solar energy device 2.
  • This power generation device includes one or more of the aforementioned solar cell 1 and solar energy device 2.
  • This photovoltaic system includes one or more of the above-described solar cell 1 and solar energy device 2.

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Abstract

本申请提供了一种太阳能器件、太阳能电池组件、用电装置、发电装置以及光伏系统。在太阳能器件中，通过第一凹槽、第二凹槽、第三凹槽以及第四凹槽的设计，可以使多个太阳能电池实现串联。同时太阳能电池中，第一电极层和第二电极层可以位于吸光层的同一侧，当太阳光由电池的入光面入射时，可以不经过第一电极层，这样可减少入射光因光学吸收而出现的损失，进而提高太阳能器件的光电转换效率。

Description

太阳能器件、太阳能电池组件、用电装置、发电装置以及光伏系统
相关申请
本申请要求2024年07月18日申请的，申请号为2024109701636，名称为“太阳能器件、用电装置、发电装置以及光伏系统”的中国专利申请的优先权，在此将其全文引入作为参考。
本申请要求2024年09月12日申请的，申请号为2024222449411，名称为“太阳能电池、光伏组件、发电装置及用电装置”的中国专利申请的优先权，在此将其全文引入作为参考。
技术领域
本申请涉及光伏技术领域，尤其是涉及一种太阳能器件、太阳能电池组件、用电装置、发电装置以及光伏系统。
背景技术
太阳能电池能够将太阳能转换为电能，传统的太阳能电池通常是依次层叠设置的第一电极层、第一电荷提取层、吸光层、第二电荷提取层以及第二电极层的结构。此时，当太阳光从电池正面或背面入射时，都会经过电极层和电荷提取层，这样会使得入射光在这些层和界面之间发生光学吸收而发生损失。这种由太阳能电池结构设计带来的吸收损失会导致太阳能电池的光电转换效率下降。
发明内容
一种太阳能器件，包括多个太阳能电池，太阳能电池包括：电荷导出组件，电荷导出组件包括层叠设置的第一电极层和绝缘层。第二电极层，第二电极层位于绝缘层远离第一电极层的一侧，绝缘层覆盖第二电极层的部分表面，未被绝缘层覆盖的第二电极层与第一电极层电连接。吸光层，吸光层包覆电荷导出组件，并覆盖于第二电极层未被绝缘层覆盖的表面。其中，多个太阳能电池沿第一方向顺序分布，相邻的太阳能电池之间设有第一凹槽，第一凹槽隔开相邻的太阳能电池的第二电极层。相邻的太阳能电池之间还设有第二凹槽，第二凹槽的槽底位于第二电极层表面，第一电极层与第二电极层电连接的至少部分通过第二凹槽内填充的导电介质连通。相邻的太阳能电池之间还设有第三凹槽，第三凹槽隔开相邻的太阳能电池的第一电极层。相邻的太阳能电池之间还设有第四凹槽，第四凹槽隔开相邻的太阳能电池的吸光层，沿第一方向上，第一凹槽、第二凹槽、第三凹槽和第四凹槽将多个太阳能电池分割和联结。
上述太阳能器件中，通过第一凹槽、第二凹槽、第三凹槽以及第四凹槽的设计，可以使多个太阳能电池实现分割和联结。在太阳能电池中，第一电极层和第二电极层可以位于吸光层的同一侧，当太阳光由电池的入光面入射时，可以不经过第一电极层，这样可减少入射光因光学吸收而出现的损失，进而提高太阳能器件的光电转换效率。
在一些实施方式中，在绝缘层覆盖第二电极层的至少部分区域，绝缘层填充第一凹槽。在绝缘层遮挡第二电极层的区域，绝缘层填充第一凹槽，可以降低相邻的太阳能电池之间出现短路的风险，提高太阳能器件的可靠性。
在一些实施方式中，相邻的太阳能电池的绝缘层相连接。相邻的太阳能电池的绝缘层相连接，一方面可以进一步降低相邻的太阳能电池之间出现短路的风险，另一方面可以降低太阳能器件的加工难度。
在一些实施方式中，第二凹槽与绝缘层错开设置。此时在加工第二凹槽时不需要对绝缘层进行加工。
在一些实施方式中，电荷导出组件还包括第一电荷传输层，第一电荷传输层位于吸光层和第一电极层之间，第一电荷传输层包覆位于绝缘层上的第一电极层，第一电荷传输层在厚度方向上的投影位于绝缘层内，厚度方向与第一方向相交。通过第一电荷传输层的设置可以促进吸光层中电荷的提取和传输，增大传输至第一电极层的电荷的数量以及电荷传输至第一电极层的传输速率，有利于进一步提高太阳能电池的光电转换效率。可选地，第一电荷传输层与绝缘层接触。
在一些实施方式中，太阳能电池还包括第二电荷传输层，第二电荷传输层位于绝缘层和第二电极层之间，吸光层覆盖于第二电荷传输层自绝缘层露出的表面。通过第二电荷传输层的设置可以促进吸光层中电荷的引出和传输，增大传输至第二电极层的电荷的数量以及电荷传输至第二电极层的传输速率，有利于进一步提高太阳能电池的光电转换效率。
在一些实施方式中，第一凹槽隔开相邻的太阳能电池的第二电荷传输层。
在一些实施方式中，第四凹槽与第二凹槽沿太阳能电池的厚度方向的投影至少部分重叠，厚度方向与第一方向相交。此时可以减少太阳能器件的死区面积，提高太阳能器件的光电转换效率。
在一些实施方式中，第二凹槽沿太阳能电池的厚度方向上的投影位于第四凹槽沿太阳能电池的厚度方向上的投影内，厚度方向与第一方向相交。此时可以进一步减少太阳能器件的死区面积，提高太阳能器件的光电转换效率。
在一些实施方式中，第三凹槽沿太阳能电池的厚度方向上的投影位于第四凹槽沿太阳能电池的厚度方向上的投影内，厚度方向与第一方向相交。此时可以进一步减少太阳能器件的死区面积，提高太阳能器件的光电转换效率。
在一些实施方式中，第三凹槽内填充绝缘材料。通过填充绝缘材料使得第一电极层直接不连通，也可以降低后续沉积的传输层和发光层填充导致第一电极层出现短路的风险。
在一些实施方式中，绝缘层的材料的电阻率≥1014欧姆·厘米(简称：Ω·cm)。可选地，绝缘层的材料的电阻率为1014Ω·cm～1016Ω·cm。
在一些实施方式中，绝缘层的材料包括氧化镁、氧化硅以及陶瓷材料中的一种或多种。
在一些实施方式中，吸光层远离第二电极层的表面呈自陷光结构。自陷光结构可以降低太阳光在太阳能电池的入光面的反射率，有利于促进太阳能电池的光电转换效率的提升。
在一些实施方式中，吸光层远离第二电极层的一侧设置有增透层。通过增透层的设置可以进一步减少太阳光在太阳能电池的入光面的反射率，提高太阳光在电池入光面的透过率，进一步提高太阳能电池的光电转换效率。
在一些实施方式中，增透层还填充于第四凹槽内。
在一些实施方式中，吸光层包括钙钛矿吸光层。此时可以形成钙钛矿太阳能电池。
在一些实施方式中，各太阳能电池中，电荷导出组件有多个，多个电荷导出组件沿第二方向间隔分布于第二电极层的表面，第二方向和第一方向相交，相邻的太阳能电池的电荷导出组件中的绝缘层一一对应连接。通过多个电荷导出组件的设置，可以提高第一电极层的面积占比，促进电荷的收集，进一步提高太阳能电池的光电转换效率。可选地，第二方向和第一方向相互垂直。
在一些实施方式中，太阳能电池还包括电极引线，多个电荷导出组件的第一电极层通过电极引线连接。通过电极引线的设置可以进一步促进多个电荷导出组件中第一电极层对电荷的收集，提高太阳能电池的光电转换效率。
一种太阳能电池组件，包括分别设置在衬底沿厚度方向的相对的两侧的第一太阳能器件和第二太阳能器件，第一太阳能器件和第二太阳能器件串联连接；其中，第一太阳能器件和第二太阳能器件包括上述的太阳能器件。
在一些实施方式中，第一太阳能器件的第一电极层和第二太阳能器件对应的第一电极层传输出的载流子相同，其中，位于衬底沿其厚度方向一侧的第一太阳能器件的第一电极层沿第一方向延伸并弯折至衬底沿其厚度方向的另一侧，并与位于衬底沿其厚度方向另一侧的第二太阳能器件的第二电极层电连接，第一太阳能器件沿第一方向的另一端部的第二电极层以及第二太阳能器件沿第一方向的另一端部的第一电极层分别设置第一汇流条引出。
在一些实施方式中，第一太阳能器件的第一电极层和第二太阳能器件的第一电极层分别沿第一方向的一侧延伸，第一太阳能器件的第二电极层和第二太阳能器件的第二电极层分别沿第一方向的另一侧延伸，第一太阳能器件和第二太阳能器件的第一电极层延伸处分别设置第一汇流条，第一太阳能器件和第二太阳能器件的第二电极层延伸处分别设置第二汇流条；可选的，两个第一汇流条电连接引出，和/或，两个第二汇流条电连接引出。
一种用电装置，包括上述的太阳能器件。
一种发电装置，包括上述的太阳能器件。
一种光伏系统，包括上述的太阳能器件。
附图说明
为了更好地描述和说明本申请提供的实施例或示例，可以参考一幅或多幅附图。用于描述附图的附加细节或示例不应当被认为是对所公开的申请、目前描述的实施例或示例以及目前理解的这些申请的最佳模式中的任何一者的范围的限制。而且在全部附图中，用相同的附图标号表示相同的部件。在附图中：
图1为本申请一实施方式的太阳能电池的俯视图。
图2为图1中A-A方向的剖视图。
图3为本申请一实施方式中太阳能器件的俯视图。
图4为图3中B-B方向的剖视图。
图5为图3中C-C方向的剖视图。
图6为图3表示另一实施方式中太阳能器件时的B-B方向的剖视图。
图7为图3表示另一实施方式中太阳能器件时的C-C方向的剖视图。
图8为本申请另一实施方式中太阳能器件的俯视图。
图9为本申请一实施方式中，制备第一电极层时的产品结构示意图。
图10为本申请的一些实施例提供的太阳能电池组件的结构示意图。
图11为本申请一实施方式中的太阳能电池组件的结构示意图。
图12为图11提供的太阳能电池组件的另一视角的结构示意图。
图13为本申请另一实施方式中的太阳能电池组件的结构示意图。
图14为图13提供的太阳能电池组件的另一视角的结构示意图。
附图标记说明：
1、太阳能电池；11、电荷导出组件；1101、第一电极层；1102、绝缘层；12、第二电极层；13、吸光
层；14、衬底；15、第一电荷传输层；16、第二电荷传输层；17、增透层；18、电极引线；19、第一凹槽；110、第二凹槽；2、太阳能器件；2-1、第一太阳能器件，2-2、第二太阳能器件；21、第三凹槽；22、第四凹槽；3、太阳能电池组件；4、第一汇流条；5、第二汇流条。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的较佳实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。
本申请所公开的“范围”可以采用下限和上限的形式来限定，给定范围是通过选定一个下限和一个上限进行限定的，选定的下限和上限限定了特别范围的边界。这种方式进行限定的范围可以是包括端值或不包括端值的，任一个端值可以独立地被包括或不被包括，并且可以进行任意地组合，即任何下限可以与任何上限组合形成一个范围。例如，如果针对特定参数列出了60～120和80～110的范围，理解为60～110和80～120的范围也是预料到的。此外，如果列出的最小范围值1和2，且如果还列出了最大范围值3，4和5，则下面的范围可全部预料到：1～3、1～4、1～5、2～3、2～4和2～5。在本申请中，除非有其他说明，数值范围“a～b”表示a到b之间的任意实数组合的缩略表示，其中a和b都是实数。例如数值范围“0～5”表示本文中已经全部列出了“0～5”之间的全部实数，“0～5”只是这些数值组合的缩略表示。另外，当表述某个参数为≥2的整数，则相当于列出了该参数为例如整数2、3、4、5、6、7、8、9、10、11、12等。比如，当表述某个参数为选自“2～10”的整数，相当于列出了整数2、3、4、5、6、7、8、9和10。
本申请中涉及“多个”、“多种”等，如无特别限定，指在数量上大于2或等于2。例如，“一种或多种”表示一种或大于等于两种。
如果没有特别的说明，本申请的所有实施方式以及可选实施方式可以相互组合形成新的技术方案。
在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例或实施方式中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其它实施例相结合。在本文中提及的“实施方式”具有类似理解。
本领域技术人员可以理解，在各实施方式或实施例的方法中，各步骤的撰写顺序并不意味着严格的执行顺序而对实施过程构成任何限定，各步骤的详细执行顺序应当以其功能和可能的内在逻辑确定。如果没有特别的说明，本申请的所有步骤可以顺序进行，也可以随机进行。例如，所述方法包括步骤(a)和(b)，表示所述方法可包括顺序进行的步骤(a)和(b)，也可以包括顺序进行的步骤(b)和(a)。例如，所述提到所述方法还可包括步骤(c)，表示步骤(c)可以任意顺序加入到所述方法，例如，所述方法可以包括步骤(a)、(b)和(c)，也可包括步骤(a)、(c)和(b)，也可以包括步骤(c)、(a)和(b)等。
在本申请中，以“含有”、“包含”、“包括”等词语描述的开放式技术特征或技术方案中，如无其他说明，不排除所列成员之外的额外成员，可视为既提供了由所列成员构成的封闭式特征或方案，还提供了在所列成员之外还包括额外成员的开放式特征或方案。例如，A包括a1、a2和a3，如无其他说明，可以还包括其他成员，也可以不包括额外成员，可视为既提供了“A由a1、a2和a3组成”的特征或方案，还提供了“A不仅包括a1、a2和a3，还包括其他成员”的特征或方案。
在本申请中，如无其他说明，“A，如B”，表示B为A中的一种非限制性示例，可以理解A不限于为B。
在本申请中，“可选地”、“可选的”、“可选”，指可有可无，也即指选自“有”或“无”两种并列方案中的任一种。如果一个技术方案中出现多处“可选”，如无特别说明，且无矛盾之处或相互制约关系，则每项“可选”各自独立。
太阳能电池的光电转换原理如下：入射光(例如，太阳光)入射进入器件内部，到达吸光层并被其吸收，在入射光的激发下吸光层产生空穴-电子对，在电场作用下空穴与电子发生分离，电子传输到一个电极，同时空穴传输到另一个电极，随后经由外电路形成回路，可用于驱动负载工作。
请参阅图1和图2，本申请一实施方式提供了一种太阳能电池1。太阳能电池1包括：电荷导出组件11，电荷导出组件11包括层叠设置的第一电极层1101和绝缘层1102。第二电极层12，第二电极层12位于绝缘层1102远离第一电极层1101的一侧，绝缘层1102覆盖第二电极层12的部分表面，未被绝缘层1102覆盖的第二电极层12与第一电极层1101电连接。吸光层13，吸光层13包覆电荷导出组件11，并覆盖于第二电极层12未被绝缘层1102覆盖的至少部分表面。
上述太阳能电池1中，第一电极层1101和第二电极层12可以位于吸光层13的同一侧，当太阳光由电池的入光面入射时，可以不经过第一电极层1101，这样可减少入射光因光学吸收而出现的损失，进而提高太阳能电池1的光电转换效率。
需要说明的是，在图1中，吸光层13对其下方的结构进行了遮挡。为了较为清楚的展示吸光层13下方的结构，在图1中，通过在吸光层13上的虚线对位于吸光层13下方的第一电荷传输层15的轮廓进行了展示。结合图2可知，在图1的吸光层13下方，存在电荷导出组件11的部分结构，其中，吸光层13下方的电荷导出组件11中的第一电荷传输层15和第一电极层1101以及绝缘层1102被吸光层13遮挡。
请参阅图3～图5，本申请还有一实施方式提供了一种太阳能器件2。该太阳能器件2包括多个上述太阳能电池1，多个太阳能电池1沿第一方向顺序分布。
具体地，太阳能器件2包括多个太阳能电池1。太阳能电池1包括：电荷导出组件11，电荷导出组件11包括层叠设置的第一电极层1101和绝缘层1102。第二电极层12，第二电极层12位于绝缘层1102远离第一电极层1101的一侧，绝缘层1102覆盖第二电极层12的部分表面，未被绝缘层1102覆盖的第二电极层12与第一电极层1101分别电连接吸光层13，吸光层13包覆第一电极层1101和绝缘层1102，并覆盖于第二电极层12未被绝缘层1102覆盖的至少部分表面。多个太阳能电池1沿第一方向顺序分布，相邻的太阳能电池1之间设有第一凹槽19，第一凹槽19隔开相邻的太阳能电池1的第二电极层12。相邻的太阳能电池1之间还设有第二凹槽110，第二凹槽110的槽底位于第二电极层12朝向吸光层13的表面，太阳能电池的第一电极层1101与相邻太阳能电池的第二电极层12电连接的至少部分通过第二凹槽110内填充的导电介质连通。相邻的太阳能电池1之间还设有第三凹槽21，第三凹槽21隔开相邻的太阳能电池的第一电极层1101。相邻的太阳能电池1之间还设有第四凹槽22，第四凹槽22隔开相邻的太阳能电池1的吸光层13。沿第一方向上，第一凹槽19、第二凹槽110、第三凹槽21和第四凹槽22将多个所述太阳能电池1分割和联结。
在本实施方式的太阳能器件2中，通过第一凹槽19、第二凹槽110、第三凹槽21以及第四凹槽22的设计，可以使多个太阳能电池1实现分割和联结。具体的，第一凹槽19用于将相邻的太阳能电池1之间的第二电极层12隔断，第三凹槽21和第四凹槽22分别用于将相邻的太阳能电池1之间的第一电极层1101和吸光层13隔断，第二凹槽110内填充导电介质用于将第一电极层1101与第二电极层12电连通，从而实现相邻两个太阳能电池1的串联连接。如上文中对太阳能电池1的描述，在太阳能电池1中通过结构设计可以使太阳能电池1的光电转化率得以提高。因此在本实施方式的太阳能器件2中，通过多个太阳能电池1的串联设置，可以使太阳能器件2具有较高的光电转换效率。
可选地，导电介质是能够将第一电极层1101与第二电极层12电连通的导电材料，作为示例，导电介质材料可以是金属导电材料、导电氧化物、石墨烯的一种或多种。金属导电材料包括Au、Ag、Cu、Al、Pt等，导电氧化物包括氟掺杂的氧化锡(简称：FTO)、氧化铟锡(简称：ITO)、掺铝氧化锌(简称：AZO)、掺硼氧化锌(简称：BZO)、氧化铟锌(简称：IZO)和氧化铟钨(简称：IWO)等的一种或几种。导电介质与第一电极层1101的材料可以相同，也可以不同。进一步可选地，导电介质于第一电极层1101的材料相同。如此设置，可通过一步制备第一电极层1101同时实现第一电极层1101的制备和第一电极层1101与第二电极层12的连通，简化制备工艺。
可以理解的是，第二凹槽110的槽底位于第二电极层12朝向吸光层13的表面，其中，在第二凹槽110的槽底对应的第二电极层12朝向吸光层13的表面可以与太阳能电池1的第二电极层12朝向吸光层13的表面平齐，在另一些实施例中，在第二凹槽110的槽底对应的第二电极层12朝向吸光层13的表面可以不与太阳能电池1的第二电极层12朝向吸光层13的表面平齐，示例性的，第二凹槽110的槽底对应的第二电极层12朝向吸光层13的表面低于太阳能电池1的第二电极层12朝向吸光层13的表面，即第二凹槽110的槽底对应的第二电极层12呈凹陷结构，此处凹陷结构的形状不做限制，可以是矩形、圆弧形、梯形、阶梯状等规则图形，也可以是不规则图形，在另一些实施例中，第二凹槽110的槽底对应的第二电极层12的凹陷结构背离吸光层13的底部可断开，如此，导电介质填充该断开的凹陷结构并与两侧的第二电极层12连接以电连通太阳能电池1的第一电极层1101与相邻的太阳能电池1的第二电极层12。
如图4和图5所示的实施方式，第三凹槽21沿电荷导出组件11厚度方向上在绝缘层1102上的投影和第四凹槽22沿电荷导出组件11厚度方向上在绝缘层1102上的投影完全重合，此时第四凹槽22可贯穿相邻的太阳能电池的第一电极层1101，第四凹槽22也将相邻的太阳能电池的第一电极层1101隔开。
可以理解的是，厚度方向与第一方向相交，可选地，厚度方向与第一方向相互垂直。
可以理解的是，图4和图5分别表示图3表示的一实施方式中的太阳能器件中B-B方向和C-C方向的剖视图。由于太阳能电池1中，绝缘层1102位于第二电极层12的部分表面，第一电极层1101位于绝缘层1102远离第二电极层12的表面，因此图3的B-B方向和C-C方向具有不同的剖视图，即图4和图5有所不同。另外，可以理解的是，第一电极层1101被隔开的目的是防止相邻两个太阳能电池短路，在第四凹槽22贯穿相邻的太阳能电池的第一电极层1101的情况下，贯穿第一电极层1101内的填充物质不能导致相邻两个太阳能电池短路，示例性的，可填充绝缘材料、半导体材料或不填充物质(如空气绝缘等)等。
如图6和图7所示的实施方式，第四凹槽22沿电荷导出组件厚度方向上的在绝缘层1102上的投影和第三凹槽21沿电荷导出组件厚度方向上的在绝缘层1102上的投影不完全重合，换言之，二者部分重合或者完全错开，此时第四凹槽22不完全贯穿相邻的太阳能电池的第一电极层1101，第四凹槽22的至少部分槽底位于第一电极层1101的表面。可以理解的是，图6和图7分别表示图3表示的另一实施方式中的太阳能器件中B-B方向和C-C方向的剖视图。由于太阳能电池1中，绝缘层1102位于第二电极层12的部分表面，第一电极层1101位于绝缘层1102远离第二电极层12的表面，因此图3的B-B方向和C-C方向具有不同的剖视图，即图6和图7有所不同。
可以理解的是，第一凹槽19、第二凹槽110、第三凹槽21以及第四凹槽22可以分别通过激光划线的方式得到。可以进一步地理解的是，第一凹槽19、第二凹槽110、第三凹槽21以及第四凹槽22还可以通过其他可行的方式得到，示例性的，第一凹槽19可以通过掩膜版制备的方式获得，即将第一凹槽19处用掩膜版提前掩盖，形成第二电极层12后，再移除对应掩膜版即可形成第一凹槽19。
在一些实施方式中，第一凹槽19沿第一方向的宽度可以是1μm至1000μm，例如，10μm至80μm或50μm至200μm。
在一些实施方式中，第二凹槽110沿第一方向的宽度可以是1μm至1000μm，例如，10μm至80μm或50μm至200μm。
在一些实施方式中，第三凹槽21沿第一方向的宽度可以是1μm至1000μm，例如，10μm至80μm或50μm至200μm。
在一些实施方式中，第四凹槽22沿第一方向的宽度可以是1μm至1000μm，例如，10μm至80μm或50μm至200μm。请参阅图4和图6，在一些实施方式中，在绝缘层1102覆盖第二电极层12的至少部分区域，绝缘层1102填充第一凹槽19。在制备太阳能器件2的一种实施方式中，可以先通过诸如激光划刻的方式在第二电极层12上形成第一凹槽19，在制备绝缘层1102时，绝缘层1102的材料会填充进第一凹槽19，进而使的在绝缘层1102遮挡第二电极层12的区域，绝缘层1102填充第一凹槽19。在绝缘层1102遮挡第二电极层12的区域，绝缘层1102填充第一凹槽19，可以降低相邻的太阳能电池1之间出现短路的风险，提高太阳能器件2的可靠性。
在一些实施方式中，相邻的太阳能电池1的绝缘层1102相连接。相邻的太阳能电池1的绝缘层1102相连接，一方面可以进一步降低相邻的太阳能电池1之间出现短路的风险，另一方面可以降低太阳能器件2的加工难度。比如，在太阳能器件2的加工过程中，通常会使用诸如激光刻蚀的方式来形成，当加工第二凹槽110时，可以不需要对绝缘层1102进行激光刻蚀，进而可以降低太阳能器件2的加工难度。另外，绝缘层1102的材料通常包括金属氧化物材料，在对这些金属氧化物进行激光刻蚀时，激光刻蚀的难度较大，因此在本实施方式中，不需要对绝缘层1102进行激光刻蚀可以降低太阳能器件2的加工难度。在另一些实施方式中，相邻的太阳能电池1的绝缘层1102也可以隔开。
在一些实施方式中，第二凹槽110与绝缘层1102错开设置。此时在加工第二凹槽110时不需要对绝缘层1102进行加工。
可以理解的是，绝缘层1102位于第二电极层12的部分表面，在图3中，C-C位置处没有绝缘层102。对应到图5和图7中，C-C位置处，第二电极层12上方没有设置绝缘层1102。在图3中，C-C位置处，存在与绝缘层1102错开的第一电极层1101。对应到图5和图7中，C-C位置处设置有与绝缘层1102错开的第一电极层1101，因此在图5中，第二凹槽110内的第一电极层1101表示与绝缘层1102错开的第一电极层1101。还可以理解的是，在制作第一电极层1101时，可以通过制作图形化第一电极层1101的方式得到图形化的第一电极层1101，使得部分第一电极层1101位于绝缘层1102上，部分第一电极层1101位于第二凹槽110内。
在一些实施方式中，电荷导出组件11还包括第一电荷传输层15，第一电荷传输层15位于吸光层13和第一电极层1101之间，第一电荷传输层15包覆位于绝缘层1102上的第一电极层1101。通过第一电荷传输层15的设置可以促进吸光层13中电荷的提取和传输，增大传输至第一电极层1101的电荷的数量以及电荷传输至第一电极层1101的传输速率，有利于进一步提高太阳能电池1的光电转换效率。可选地，第一电荷传输层15与绝缘层1102接触。
可以理解的是，第一电荷传输层15可以包括电子传输层，也可以包括空穴传输层。在第一电荷传输层15包括电子传输层的情况下，第一电荷传输层15将吸光层13中产生的电子传输至第一电极层1101；在第一电荷传输层15包括空穴传输层的情况下，第一电荷传输层15将吸光层13中产生的空穴传输至第一电极层1101。
在一些实施方式中，位于绝缘层1102上的第一电极层1101位于绝缘层1102的部分表面，第一电荷传输层15在绝缘层1102的厚度方向上的投影沿第一方向上的两个边缘与绝缘层1102沿第一方向上的两个边缘平齐，即，第一电荷传输层15在厚度方向上的投影位于绝缘层1102内，厚度方向与第一方向相交，可选地，厚度方向与第一方向相互垂直。此时，可以通过第一电荷传输层15和绝缘层1102将第一电极层1101进行更加完整的包覆，促进第一电荷传输层15传输的电荷更加充分地向第一电极层1101传输，可以减少第一电极层1101与吸光层13直接接触造成的漏电流和腐蚀，进而有利于减少电荷传输过程中的损耗，进一步提高太阳能电池1的光电转换效率。在另一些实施方式中，第一电荷传输层15在绝缘层1102的厚度方向上的投影沿第一方向上的两个边缘与绝缘层1102沿第一方向上的两个边缘中可以任一个边缘平齐，另一个边缘不平齐，或两个边缘均不平齐。边缘不平齐可以包括第一电荷传输层15在绝缘层1102的厚度方向上的投影沿第一方向上的一个边缘超出绝缘层1102沿第一方向上对应的边缘，或者第一电荷传输层15在绝缘层1102的厚度方向上的投影较绝缘层1102沿第一方向上对应的边缘更靠近第一电极层1101对应第一方向上的边缘。
在另一些实施方式中，位于绝缘层1102上的第一电极层1101位于绝缘层1102的全部表面，即，第一电极层1101在绝缘层1102的厚度方向上的投影沿第一方向上的两个边缘与绝缘层1102沿第一方向上的两个边缘平齐，此时，第一电荷传输层15在厚度方向上的投影超出绝缘层1102，但能够隔开第一电极层1101与吸光层13直接接触以减少二者之间接触可能造成的漏电流和腐蚀。
在一些实施方式中，太阳能电池1还包括第二电荷传输层16，第二电荷传输层16位于吸光层13和第二电极层12之间。通过第二电荷传输层16的设置可以促进吸光层13中电荷的引出和传输，增大传输至第二电极层12的电荷的数量以及电荷传输至第二电极层12的传输速率，有利于进一步提高太阳能电池1的光电转换效率。可选地，第二电荷传输层16可以是电子传输层，也可以包括空穴传输层。在第二电荷传输层16包括电子传输层的情况下，第二电荷传输层16将吸光层13中产生的电子传输至第二电极层12；在第二电荷传输层16包括空穴传输层的情况下，第二电荷传输层16将吸光层13中产生的空穴传输至第二电极层12。
在一些具体的实施方式中，第二电荷传输层16部分位于绝缘层1102和第二电极层12之间，吸光层13覆盖于第二电荷传输层16自绝缘层1102露出的表面。如此，可以一体化制备第二电荷传输层16，无需利用掩膜版或者激光刻蚀等方式去除绝缘层1102下方的第二电荷传输层16，制备工艺更加简单。可以理解的是，第二电荷传输层16位于第二电极层12的表面，绝缘层1102位于第二电荷传输层16的部分表面。
还可以理解的是，第一电荷传输层15和第二电荷传输层16同时存在的情况下，其中一个包括电子传输层，另外一个包括空穴传输层，或者其中一个包括空穴传输层，另外一个包括电子传输层。比如，在一些实施方式中，第一电荷传输层15包括电子传输层，第二电荷传输层16包括空穴传输层。在另一些实施方式中，第一电荷传输层15包括空穴传输层，第二电荷传输层16包括电子传输层。
在一些实施方式中，电子传输层的材料可以包括但不限于以下材料及其衍生物中的一种或多种：酰亚胺化合物、醌类化合物、富勒烯及其衍生物、金属氧化物、金属硫化物、金属氟化物、含氰基的聚苯乙炔、含硼的聚合物、浴铜灵、红菲咯啉、羟基喹啉铝、噁二唑化合物鞥。其中，富勒烯及其衍生物包括富勒烯C60、富勒烯C70、PCBM([6,6]-苯基-C61-丁酸甲酯)、[6,6]-苯基C71丁酸甲酯(PC71BM)等中的一种或多种；酰亚胺类化合物包括苝酰亚胺类材料、萘酰亚胺类材料、邻苯二甲酰亚胺、琥珀酰亚胺、N-溴代琥珀酰亚胺、戊二酰亚胺或马来酰亚胺等中的一种或多种；金属氧化物中金属元素可以包括Mg、Ni、Cd、Zn、In、Pb、Mo、W、Sb、Bi、Cu、Hg、Ti、Ag、Mn、Fe、V、Sn、Zr、Sr、Ga和Cr中的一种或多种，如氧化锡(SnO2)、氧化锌(ZnO)、氧化钛中的一种或多种。金属硫化物如硫化铟或硫化锌，属氟化物如氟化锂(LiF)、氟化钠、氟化镁(MgF2)、氟化钙(CaF2)中的一种或多种。
在一些实施方式中，空穴传输层的材料可以包括但不限于以下材料及其衍生物中的一种或多种：2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴(简称：Spiro-OMeTAD)、聚三芳胺(简称：PTAA)、镍氧化物(简称：NiOx)、聚3,4-乙烯二氧噻吩：聚苯乙烯磺酸盐(简称：PEDOT：PSS)、聚3-已基噻吩(简称：P3HT)、WO3、磷酸基单分子及其聚合物、咔唑基单分子及其聚合物、磺酸基单分子及其聚合物、三苯胺基单分子及其聚合物、芳香基单分子及其聚合物、碘化亚铜和硫氰酸亚铜等可以传输空穴、阻挡电子的材料。
在一些实施方式中，第一凹槽19隔开相邻的太阳能电池1的第二电荷传输层16。
在一些实施方式中，第四凹槽22与第二凹槽110沿太阳能电池1的厚度方向的投影至少部分重叠，厚度方向与第一方向相互垂直。此时可以减少太阳能器件的死区面积，提高太阳能器件的光电转换效率。
在一些实施方式中，第二凹槽110沿太阳能电池1的厚度方向上的投影位于第四凹槽22沿太阳能电池1的厚度方向上的投影内，厚度方向与第一方向相互垂直。此时可以进一步减少太阳能器件的死区面积，提高太阳能器件的光电转换效率。
在一些实施方式中，第三凹槽21沿太阳能电池1的厚度方向上的投影位于第四凹槽22沿太阳能电池1的厚度方向上的投影内，厚度方向与第一方向相交，可选地，厚度方向与第一方向相互垂直。此时可以进一步减少太阳能器件的死区面积，提高太阳能器件的光电转换效率。
在一些实施方式中，第三凹槽21内填充绝缘材料。通过填充绝缘材料使得第一电极层1101直接不连通，也可以降低后续沉积的第一电荷传输层15和吸光层13填充导致第一电极层1101出现短路的风险。
在一些实施方式中，绝缘层1102的材料的电阻率≥1014Ω·cm。比如，绝缘层1102的材料的电阻率可以是1014Ω·cm、2×1014Ω·cm、5×1014Ω·cm、8×1014Ω·cm、1015Ω·cm、2×1015Ω·cm、5×1015Ω·cm、8×1015Ω·cm、1016Ω·cm、5×1016Ω·cm、1017Ω·cm或者上述任意两个数值之间的范围。可选地，绝缘层1102的材料的电阻率为1014Ω·cm～1016Ω·cm。进一步可选地，绝缘层1102的材料包括氧化镁、氧化硅以及陶瓷材料中的一种或多种；可选地，陶瓷材料包括氧化铝和氧化锆中的一种或多种。绝缘层1102的材料也可以选自聚烯烃(例如聚苯乙烯或聚乙烯)和聚丙烯酸酯(例如聚甲基丙烯酸甲酯)的聚合物。绝缘层1102厚度可以是20nm至1000nm，例如，50nm至500nm或100nm至300nm。
可以理解的是，第三凹槽21内填充绝缘材料的情况下，绝缘材料可以在上文列出的绝缘层1102的材料中进行选择。
在一些实施方式中，吸光层13远离第二电极层12的表面呈自陷光结构。可以理解的是，自陷光结构是指在微米或纳米尺度的凸起或凹陷组成的表面结构，可以利用光的折射、反射、散射和干涉等现象，改变光在太阳能电池表面的传播路径，增加光在太阳能电池内部的停留时间，有效的降低光的反射，从而提高光吸收率。自陷光结构可以降低太阳光在太阳能电池1的入光面的反射率，增加光的散射和耦合，有利于促进太阳能电池1的光电转换效率的提升。可以理解的是，自陷光结构可以包括金字塔的绒面结构。自陷光结构可以通过激光处理或化学处理的方式制得。
在一些实施方式中，吸光层13远离第二电极层12的一侧设置有增透层17。增透层也称为减反射膜，或抗反射膜，它的主要功能是减少或消除电池表面的反射光，从而增加透光量，减少或消除系统的杂散光。可以理解的是，增透层17的设置可以进一步减少太阳光在太阳能电池1的入光面的反射率，提高太阳光在电池入光面的透过率，进一步提高太阳能电池1的光电转换效率。可选地，可以通过沉积的方式在吸光层13远离第二电极层12的表面形成增透层17，和/或在吸光层13远离第二电极层12的表面粘附增透膜以形成增透层17。
可以理解的是，在形成增透层17时，增透层17的材料会填充到第四凹槽22中，即增透层17还填充于第四凹槽22内。进一步可以理解的是，增透层17还可以被第四凹槽22隔开。
可选地，增透层17的材料可以是二氧化钛、二氧化硅、硫化锌、硒化锌、有机硅树脂以及聚丙烯酸树脂中的一种或多种。
在一些实施方式中，吸光层13包括钙钛矿吸光层，此时可以形成钙钛矿太阳能电池。吸光层13还可以包括碲化镉吸光层、铜铟镓硒吸光层、砷化镓吸光层、电子给体-电子受体活性层等，此时可形成对应的碲化镉太阳能电池、铜铟镓硒太阳能电池、砷化镓太阳能电池、有机薄膜太阳能电池等。
请参阅图8，在一些实施方式中，各太阳能电池1中，电荷导出组件11有多个，多个电荷导出组件11沿第二方向间隔分布于第二电极层12的表面，第二方向和第一方向相交，相邻的太阳能电池1的电荷导出组件11中的绝缘层1102一一对应连接。通过多个电荷导出组件11的设置，可以提高第一电极层1101的面积占比，促进电荷的收集，进一步提高太阳能电池1的光电转换效率。进一步地，通过多个电荷导出组件11的设置，可以使大面积太阳能器件2上的电荷被充分收集，有利于促进大面积太阳能器件2的发展。可以理解的是，太阳能电池1还包括电极引线18，多个电荷导出组件11的第一电极层1101通过电极引线18连接。通过电极引线18的设置可以进一步促进多个电荷导出组件11中第一电极层1101对电荷的收集，提高太阳能电池1的光电转换效率。进一步可选地，电极引线18的材料可以采用与第一电极层1101相同的材料。可选地，第二方向和第一方向相互垂直。请参阅图8，作为一种示例，Y表示第一方向，X表示第二方向，第二方向和第一方向相互垂直。
可以理解的是，相邻的太阳能电池1的电荷导出组件11中的绝缘层1102一一对应连接表示，相邻的太阳电池1的绝缘层1102的数量相同，并且相邻的太阳电池1的绝缘层1102在第一方向上对应连接。
可以理解的是，第一方向、第二方向以及厚度方向两两相交，可选地，第一方向、第二方向以及厚度方向两两相互垂直。
在一些实施方式中，电荷导出组件11有多个，多个电荷导出组件11沿第二方向间隔分布于第二电极层12的表面。在本申请的太阳能电池1中，绝缘层1102位于第二电极层12的部分表面，第一电极层1101位于绝缘层1102远离第二电极层12的表面，通过多个电荷导出组件11的设置，可以提高第一电极层1101的面积占比，促进电荷的收集，进一步提高太阳能电池1的光电转换效率。可以理解的是，随着电池面积的增大，多个电荷导出组件11的设置可以促进大面积吸光层的电荷导出，改善大面积电池的光电转换效率。
可选地，太阳能电池1还包括电极引线18，多个电荷导出组件11的第一电极层1101通过电极引线18连接。通过电极引线18的设置可以进一步促进多个电荷导出组件11中第一电极层1101对电荷的收集，提高太阳能电池1的光电转换效率。进一步可选地，电极引线18的材料可以采用与第一电极层1101相同的材料。
作为多个电荷导出组件11的一种示例，请参阅图8，其中太阳能电池1包括3个电荷导出组件11，3个电荷导出组件11中的第一电极层1101通过电极引线18连接。可以理解的是，太阳能电池1中电荷导出组件11的数量可以根据实际设计需求进行合适选择。比如，太阳能电池1中电荷导出组件11的数量可以是2个、4个、5个、6个等。
可以理解的是，太阳能电池1还包括衬底14，衬底14位于第二电极层12远离吸光层13的表面。可选地，衬底14可以是PCB陶瓷板、塑料、硅、氧化硅、碳化硅等。进一步可选地，衬底14可以是刚性绝缘衬底14。进一步地，由于太阳光可以不需要通过第一电极层1101而入射到吸光层13，因此可以以吸光层13远离衬底14的表面作为入光面，此时在对衬底14进行选择时，不需要对衬底14的透光性有特殊的限定，即当选用透光性较差的衬底14时，太阳能电池1也能够获得较高的光电转换效率。
当然，当第二电极层12为透明电极层时，太阳能电池1的两个表面均可以作为入光面。进一步可选地，第二电极层12为透明电极层时，第二电极层12的材料选自氟掺杂的氧化锡(简称：FTO)、氧化铟锡(简称：ITO)、掺铝氧化锌(简称：AZO)、掺硼氧化锌(简称：BZO)、氧化铟锌(简称：IZO)和氧化铟钨(简称：IWO)中的一种或几种。
在一些实施方式中，第二电极层12的材料包含导电金属、导电非金属中以及导电氧化物的至少一种。可选地，导电金属选自Au、Ag、Cu、Al、Ni、Cr、Bi、Pt、Mg、Mo、W及其合金中的一种或几种。导电非金属选自C。导电氧化物选自氟掺杂的氧化锡(简称：FTO)、氧化铟锡(简称：ITO)、掺铝氧化锌(简称：AZO)、掺硼氧化锌(简称：BZO)、氧化铟锌(简称：IZO)和氧化铟钨(简称：IWO)中一种或几种。
在一些实施方式中，第一电极层1101的材料包含导电金属、导电非金属中以及导电氧化物的至少一种。可选地，导电金属选自Au、Ag、Cu、Al、Ni、Cr、Bi、Pt、Mg、Mo、W及其合金中的至少一种。导电非金属选自C。进一步地，第一电极层1101也可以是透明电极层，此时，第一电极层1101的材料选自氟掺杂的氧化锡(简称：FTO)、氧化铟锡(简称：ITO)、掺铝氧化锌(简称：AZO)、掺硼氧化锌(简称：BZO)、氧化铟锌(简称：IZO)和氧化铟钨(简称：IWO)中的至少一种。
在一些实施方式中，太阳能电池1还包括金属氟化物层。金属氟化物层位于电子传输层和第一电极层1101之间。或者，金属氟化物层位于电子传输层和第二电极层12之间。通过金属氟化物层的设置，可以促进电子的提取，进而改善钙钛矿光伏组件的光电转换效率。
可以理解的是，还可以根据需求在太阳能电池1中引入其他的功能层，如修饰层。可选地，太阳能电池1可以设置能级合适的修饰层，可发挥降低能级势垒、促进能级匹配、提高电荷抽取效率、钝化界面缺陷态、保护吸光层13、抑制水分子、氧气对电池氧化分解、提高光电转换效率、改善电池稳定性等作用中的一种或多种。根据修饰层所处位置的不同，修饰层的类型可包括空穴传输层与阳极之间的修饰层、电子传输层与阴极之间的修饰层、空穴传输层与吸光层13之间的修饰层、电子传输层与吸光层13之间的修饰层等。可选地，能够用于钙钛矿太阳能电池1中修饰层的材料可以包括但不限于：BCP(2，9-二甲基-4，7-二苯基-1，10-菲咯啉)、氧化锡、Cu2O、NiO、AZO、TiO2等。
可以理解的是，钙钛矿吸光层包括化学式为ABX3或A2CDX6的材料。其中：
A为无机或有机或有机-无机混合阳离子，包含有机胺阳离子、Cs阳离子、K阳离子、Rb阳离子、Ag阳离子和Li阳离子中的至少一种；有机胺阳离子选自(NR1R2R3R4)+、(R1R2N＝CR3R4)+、(R1R2N-C(R5)＝NR3R4)+或(R1R2N-C(NR5R6)＝R3R4)+，其中，R1、R2、R3、R4、R5和R6各自独立地选自H、取代或非取代的C1-20烷基或取代或非取代的芳基；A可选地为甲胺阳离子(简称：CH3NH3 +或MA+)，甲脒阳离子(简称：HC(NH2)2 +或FA+)，二甲胺阳离子，铯离子(简称：Cs+)和铷离子(简称：Rb+)中的至少一种，进一步可选地为甲胺阳离子、甲脒阳离子或铯离子的一种或多种。
B为无机或有机或有机-无机混合二价阳离子，包括铅、锡、锌、钛、锑、铋、镍、铁、钴、银、铜、镓、锗、镁、钙、铟、铝、锰、铬、钼和铕二价阳离子中的至少一种，可选地为二价金属离子Pb2+和Sn2+中的至少一种。
C为无机或有机或有机-无机混合阳离子，可选地为一价金属离子Ag+、Cs+、K+和Rb+等。
D为无机或有机或有机-无机混合阳离子，可选地为三价金属离子铋阳离子Bi3+、锑阳离子Sb3+、铁离子Fe3+、铜离子Cu3+、铟阳离子In3+等。
X为无机或有机或有机-无机混合阴离子，可选地为卤素阴离子和类卤素阴离子中的一种或多种，如氟离子(F-)、氯离子(Cl-)、溴离子(Br-)、碘离子(I-)、硫氰根离子(SCN-)、甲酸根离子(HCOO-)、(CH3COO-)、三氟乙酸根离子(CF3COO-)、甲烷磺酸根离子(CH3SO3 -)、三氟甲烷磺酸根离子(CF3SO3 -)、氰根离子(CN-)的一种或多种，进一步可选地为溴离子(简称：Br-)或碘离子(简称：I-)。
在一些实施方式中，钙钛矿吸光层中的钙钛矿材料可选自Csx1FA1-x1PbX3、Csx1MA1-x1PbX3、CsmFAnMA1-m-nPbX3、CsPbX3、MAPbX3、FAPbX3、Csx1FA1-x1Pbx2Sn1-x2X3、Csx1FA1-x1Pbx2Sn1-x2X3、CsmFAnMA1-m-nPbx2Sn1-x2X3、CsPbx2Sn1-x2X3、MAPbx2Sn1-x2X3和FAPbx2Sn1-x2X3中的一种或多种，其中，0＜x1＜1，0＜x2＜1，0＜m＜1，0＜n＜1。作为示例，钙钛矿材料包括CH8I3N2Pb(FAPbI3)、Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3、CsPbBr3、CsPbI3、Cs0.05FA0.95PbI3和MA0.2FA0.8PbI3中的一种或多种。
在一些实施方式中，钙钛矿吸光层的带隙为1.2电子伏特(简称：eV)～2.3eV。作为示例，钙钛矿吸光层13的带隙为1.2eV、1.3eV、1.4eV、1.5eV、1.6eV、1.7eV、1.8eV、1.9eV、2eV、2.1eV、2.2eV、2.3eV或者上述任意两个数值之间的范围。钙钛矿吸光层13的带隙在上述范围内时，可具有较高的可见光吸收效率。
本申请还有一实施方式提供了一种上述太阳能器件2的制备方法。以同时包含第一电荷传输层15和第二电荷传输层16为例，该太阳能器件2的制备方法包括如下步骤：
在第二电极层12上制备第二电荷传输层16。
制备第一凹槽19，第一凹槽19自第二电极层12的厚度方向上贯穿第二电荷传输层16和第二电极层12，以隔开相邻的太阳能电池1的第二电荷传输层16和第二电极层12。
在第二电极层12的部分表面制备绝缘层1102。
在第二电极层12自绝缘层1102露出的区域制备第二凹槽110，第二凹槽110贯穿第二电荷传输层16。
制备第一电极层1101，使部分第一电极层1101位于绝缘层1102远离第二电极层12的表面，部分第一电极层1101填充第二凹槽110以与第二电极层12相连接。此时，产品的结构如图7所示。可以理解的是，制作第一凹槽19之后，部分衬底14自第一凹槽19露出。与绝缘层1102错开的第一电极层1101填充第二凹槽110，在第二凹槽110与第二电极层12相接触。
在绝缘层1102上的第一电极层1101上方制备第一电荷传输层15，第一电荷传输层15包覆第一电极层1101。
制备钙钛矿层，使吸光层13覆盖于第一电荷传输层15、自第一电荷传输层15露出的第一电极层1101以及第二电荷传输层16的表面。
制备第三凹槽21和第四凹槽22，第三凹槽21贯穿第一电荷传输层15以及第一电极层1101，第四凹槽22贯穿吸光层13，通过第三凹槽21和第四凹槽22可以在太阳能器件2上形成多个相邻的太阳能电池1。
本申请还有一实施方式提供了太阳能电池组件3，请参阅图10和图11，太阳能电池组件3包括分别设置在衬底14沿厚度方向的相对的两侧的第一太阳能器件2-1和第二太阳能器件2-2，第一太阳能器件2-1和第二太阳能器件2-2串联连接；其中，第一太阳能器件2-1和第二太阳能器件2-2的结构同上述太阳能器件2。
由于衬底14沿其自身厚度方向的两侧设置有第一太阳能器件2-1和第二太阳能器件2-2，由此，使得太阳能电池组件3能够从正面和背面同时吸收光能，除了入射光外，还能够充分利用反射光和漫反射光，提高光利用率，减少反射损失，从而将光能更为高效地转换为电能，提高发电效率。另外，由于第一太阳能器件2-1和第二太阳能器件2-2的吸光层13均位于入光侧，第一电极层1101和第二电极层13均位于吸光层13的背光侧，由此，无论光在太阳能电池组件3的任一侧入射，都能够直接经由吸光层13吸收，从而能够有效减少光学寄生损失，提高太阳能电池组件3的效率极限，进而能够提高太阳能电池组件3的输出电流以及光电转换效率。
请参阅图11和12，第一太阳能器件2-1的第一电极层1101和第二太阳能器件2-2对应的第一电极层1101传输出的载流子相同，第一太阳能器件2-1和第二太阳能器件2-2形成串联连接，可提高太阳能电池组件3的输出电压。具体的，位于衬底14沿其厚度方向一侧的第一太阳能器件2-1的第一电极层1101沿第一方向延伸，并且在衬底14的边缘处发生弯折，弯折至衬底14沿其厚度方向的另一侧，并且与位于衬底14沿其厚度方向另一侧的第二太阳能器件2-2的第二电极层12电连接，再在第一太阳能器件2-1沿第一方向的另一端部的第二电极层12以及第二太阳能器件2-2沿第一方向的另一端部的第一电极层1101分别设置第一汇流条4引出，其中一个作为正极，另一个作为负极，即可将太阳能电池组件3的正负极分别引出。或者，还可以是位于衬底14沿其厚度方向一侧的第一太阳能器件2-1的第二电极层12沿第一方向延伸，并且在衬底14的边缘处发生弯折，弯折至衬底14沿其厚度方向的另一侧，并且与位于衬底14沿其厚度方向另一侧的第二太阳能器件2-2的第一电极层1101电连接，再在第一太阳能器件2-1沿第二方向的另一端部的第一电极层1101以及第二太阳能器件2-2沿第二方向的另一端部的第二电极层12分别设置第一汇流条4引出，其中一个作为正极，另一个作为负极，即可将太阳能电池组件3的正负极分别引出。进一步可以理解的是，衬底14的边缘处发生弯折还可以通过第一汇流条4将对应的电极层连通实现。
请参阅图13和14，位于衬底14沿其厚度方向一侧的第一太阳能器件2-1的第一电极层1101沿第一方向的一侧延伸，第一太阳能器件2-1的第二电极层12沿第一方向的另一侧延伸，位于衬底14沿其厚度方向另一侧的第二太阳能器件2-2的第一电极层1101沿与第一太阳能器件2-1的第一电极层1101延伸方向相同的一侧延伸，第二太阳能器件2-2的第二电极层12沿与第一太阳能器件2-1的第二电极层12的延伸方向相同的一侧延伸，第一太阳能器件2-1和第二太阳能器件2-2的第一电极层1101延伸处分别设置第一汇流条4，第一太阳能器件2-1和第二太阳能器件2-2的第二电极层12延伸处分别设置第二汇流条5，如此，可以实现第一太阳能器件2-1和第二太阳能器件2-2的分别引出。可以理解的是，在第一太阳能器件2-1的第一电极层1101和第二太阳能器件2-2对应的第一电极层1101传输出的载流子不同的情况下，可以通过将第一汇流条4分别连通和第二汇流条5分别连通，从而实现第一太阳能器件2-1和第二太阳能器件2-2的并联连接，可提高太阳能电池组件3的输出电流。在另一些实施例中，第一汇流条4和第二汇流条5也可以各自分别引出，从而实现第一太阳能器件2-1和第二太阳能器件2-2独立连接，可灵活调整太阳能电池组件3的电压或者电流。
在一些实施例中，第一太阳能器件2-1的吸光层13的带隙与第二太阳能器件2-2的吸光层13的带隙不同。
带隙也称为能隙或者禁带宽度，是指导带的最低点和价带的最高点的能量之差。吸光层13的带隙能够影响到吸光层13吸收光子的能量范围。示例性地，带隙测量方法可以包括：首先，通过紫外吸收光谱测试，获得紫外吸收曲线；然后通过Tauc方程进行计算得到吸光层40的带隙。
在第一太阳能器件2-1和第二太阳能器件2-2形成串联连接的实施例中，由于太阳能电池组件3的第一太阳能器件2-1和第二太阳能器件2-2彼此串联连接，因此，两个太阳能器件的电流会相互影响，其中太阳能器件的电流过大、过小甚至没有电流均会影响整个太阳能电池组件3的输出电流，所以要使得第一太阳能器件2-1和第二太阳能器件2-2的电流能够相互匹配。
由此，本申请实施例中的太阳能电池组件3的第一太阳能器件2-1和第二太阳能器件2-2的吸光层13的带隙不同，可以根据光入射的强度、多少等调控二者的带隙，使得串联连接的第一太阳能器件2-1和第二太阳能器件2-2能够形成电流匹配，有利于提高太阳能电池组件3的稳定性、可靠性。
在一些实施例中，第一太阳能器件2-1朝向强光侧，第二太阳能器件2-2朝向弱光侧。第一太阳能器件2-1的吸光层13的带隙大于第二太阳能器件2-2的吸光层的带隙。
吸光层13的带隙较小时，意味着吸光层13能够吸收更低能量的光子，而光的能量与波长成反比，因此，吸光层13的带隙越小，吸光层13能够吸收的光的波长范围就越大。反之，吸光层13的带隙较大时，意味着吸光层13仅能够吸收能量较高的光子，即，仅能够吸收波长较短的光，因此，吸光层13的带隙越大，吸光层13能够吸收的光的波长范围越小。
强光侧通常是指光线直接照射到物体的一侧，这时光线密集，强度高。弱光侧则是指光线较弱或间接照射到物体的一侧，通常是因为光线被遮挡或反射，导致光线分散、强度较低。一般情况下，位于强光侧的第一太阳能器件2-1相对于位于弱光侧的第二太阳能器件2-2接收到的光子会更多，如果第一太阳能器件2-1将强光侧的光子全部吸收，则第二太阳能器件2-2仅能够吸收到很少的光子甚至可能无法吸收到光子，这会使得第二太阳能器件2-2产生的电流很小甚至无法产生电流。而由于第一太阳能器件2-1和第二太阳能器件2-2彼此串联连接，第二太阳能器件2-2过小的电流则可能使得太阳能电池组件3发生断路现象，影响到太阳能电池100的光电转换效率。
因此，在本申请实施例中，利用叠层器件的光学互补原理，使得朝向强光侧的第一太阳能器件2-1的吸光层13的带隙大于朝向弱光侧的第二太阳能器件2-2的吸光层13的带隙，从而使得第一太阳能器件2-1仅吸收部分较小波长范围内的光，并且使得第二太阳能器件2-2吸收较大波长范围内的光，这样，使得第二太阳能器件2-2至少能够吸收不能被第一太阳能器件2-1吸收的波长范围内的光，降低第二太阳能器件2-2无法吸收到光而无法产生电流的不良情况发生的可能性，维持了二端结构的太阳能电池组件3的电流平衡，使得太阳能电池组件3的稳定性更好，可靠性更高。而且还能够提高太阳能电池组件3对光谱的吸收利用，进一步提高太阳能电池组件3的效率。
当然，本领域技术人员应当理解，在一些其他实施例中，也可以是第二太阳能器件2-2面向强光侧，第一太阳能器件2-1面向弱光侧，只要使得面向强光侧的子电池的吸光层13的带隙大于面向弱光侧的子电池的吸光层13的带隙即可。
在一些实施例中，第一太阳能器件2-1的吸光层13的带隙在1.7eV(电子伏特)至1.8eV之间。第二太阳能器件2-2的吸光层13的带隙在1.2eV至1.3eV之间。
由此，分别为第一太阳能器件2-1和第二太阳能器件2-2提供合理的带隙选择范围，从而能够根据实际入射光的波长范围选取吸光层13的带隙，使得分别朝向强光侧和弱光侧的第一太阳能器件2-1和第二太阳能器件2-2能够实现电流匹配。而且，提高了对光谱的吸收利用，进一步提高了太阳能电池组件3的效率。
示例性地，朝向强光侧的第一太阳能器件2-1的吸光层13的带隙例如可以为1.70eV、1.71eV、1.72eV、1.73eV、1.74eV、1.75eV、1.76eV、1.77eV、1.78eV、1.79eV、1.80eV等。朝向弱光侧的第二太阳能器件2-2的吸光层13的带隙例如可以为1.20eV、1.21eV、1.22eV、1.23eV、1.24eV、1.25eV、1.26eV、1.27eV、1.28eV、1.29eV、1.30eV等。
在本申请实施例中，第一太阳能器件2-1的吸光层13的材料包括但不限于宽带隙钙钛矿吸光层，示例性的，包括APbIyBr3-y所示的材料，其中，A的定义如上述，1≤y＜3。第二太阳能器件2-2的吸光层13的材料包括但不限于钙钛矿吸光层、碲化镉吸光层、砷化镓吸光层、铜铟镓硒吸光层。示例性的，钙钛矿吸光层中的钙钛矿材料可选自Csx1FA1-x1Pbx2Sn1-x2X3、Csx1FA1-x1Pbx2Sn1-x2X3、CsmFAnMA1-m-nPbx2Sn1-x2X3、CsPbx2Sn1-x2X3、MAPbx2Sn1-x2X3和FAPbx2Sn1-x2X3中的一种或多种，其中，0＜x1＜1，0≤x2＜1，0＜m＜1，0＜n＜1。例如钙钛矿材料包括FAPb0.5Sn0.5I3、Cs0.05FA0.95Pb0.5Sn0.5I3、Cs0.2FA0.8Pb0.5Sn0.5I3Cs0.25FA0.75Pb0.5Sn0.5I3中的一种或多种。
本申请还有一实施方式提供了一种用电装置。该用电装置包括上述太阳能电池1和上述太阳能器件2中的一种或多种。
本申请还有一实施方式提供了一种发电装置。该发电装置包括上述太阳能电池1和上述太阳能器件2中的一种或多种。
本申请还有一实施方式提供了一种光伏系统。该光伏系统包括上述太阳能电池1和上述太阳能器件2中的一种或多种。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (22)

  1. 一种太阳能器件，包括多个太阳能电池，所述太阳能电池包括：
    电荷导出组件，所述电荷导出组件包括层叠设置的第一电极层和绝缘层；
    第二电极层，所述第二电极层位于所述绝缘层远离所述第一电极层的一侧，所述绝缘层覆盖所述第二电极层的部分表面，未被所述绝缘层覆盖的所述第二电极层与所述第一电极层电连接；
    吸光层，所述吸光层包覆所述电荷导出组件，并覆盖于所述第二电极层未被所述绝缘层覆盖的表面；其中，
    多个所述太阳能电池沿第一方向顺序分布，相邻的所述太阳能电池之间设有第一凹槽，所述第一凹槽隔开相邻的所述太阳能电池的所述第二电极层；
    相邻的所述太阳能电池之间还设有第二凹槽，所述第二凹槽的槽底位于所述第二电极层朝向所述吸光层的表面，太阳能电池的所述第一电极层与相邻太阳能电池的所述第二电极层电连接的至少部分通过所述第二凹槽内填充的导电介质连通；
    相邻的所述太阳能电池之间还设有第三凹槽，所述第三凹槽隔开相邻的所述太阳能电池的所述第一电极层；
    相邻的所述太阳能电池之间还设有第四凹槽，所述第四凹槽隔开相邻的所述太阳能电池的所述吸光层，沿所述第一方向上，所述第一凹槽、所述第二凹槽、所述第三凹槽和所述第四凹槽将多个所述太阳能电池分割和联结。
  2. 根据权利要求1所述的太阳能器件，其中，在所述绝缘层覆盖所述第二电极层的至少部分区域，所述绝缘层填充所述第一凹槽。
  3. 根据权利要求1或2所述的太阳能器件，其中，相邻的所述太阳能电池的所述绝缘层相连接。
  4. 根据权利要求1～3中任一项所述的太阳能器件，其中，所述第二凹槽与所述绝缘层错开设置。
  5. 根据权利要求1～4任一项所述的太阳能器件，其中，所述电荷导出组件还包括第一电荷传输层，所述第一电荷传输层位于所述吸光层和所述第一电极层之间，所述第一电荷传输层包覆位于所述绝缘层上的所述第一电极层；
    可选的，所述第一电荷传输层位于所述吸光层和所述第一电极层之间，所述第一电荷传输层包覆位于所述绝缘层上的所述第一电极层，所述第一电荷传输层在厚度方向上的投影位于所述绝缘层内，所述厚度方向与所述第一方向相交。
  6. 根据权利要求5所述的太阳能器件，其中，所述第一电荷传输层与所述绝缘层接触。
  7. 根据权利要求1～6中任一项所述的太阳能器件，其中，所述太阳能电池还包括第二电荷传输层，所述第二电荷传输层位于所述吸光层和所述第二电极层之间；
    可选的，所述第二电荷传输层位于所述绝缘层和所述第二电极层之间，所述吸光层覆盖于所述第二电荷传输层自所述绝缘层露出的表面。
  8. 根据权利要求7所述的太阳能器件，其中，所述第一凹槽隔开相邻的所述太阳能电池的所述第二电荷传输层。
  9. 根据权利要求1～8中任一项所述的太阳能器件，其中，所述太阳能器件满足以下条件的一个或多个：
    (1)所述第四凹槽与所述第二凹槽沿所述太阳能电池的厚度方向的投影至少部分重叠，所述厚度方向与所述第一方向相交；
    (2)所述第二凹槽沿所述太阳能电池的厚度方向上的投影位于所述第四凹槽沿所述太阳能电池的厚度方向上的投影内，所述厚度方向与所述第一方向相交；
    (3)所述第三凹槽沿所述太阳能电池的厚度方向上的投影位于所述第四凹槽沿所述太阳能电池的厚度方向上的投影内，所述厚度方向与所述第一方向相交；
    (4)所述第三凹槽内填充绝缘材料；
    (5)所述绝缘层的材料的电阻率≥1014Ω·cm。
  10. 根据权利要求1～9中任一项所述的太阳能器件，其中，所述绝缘层的材料满足以下条件中的一个或两个：
    (1)所述绝缘层的材料的电阻率为1014Ω·cm～1016Ω·cm；
    (2)所述绝缘层的材料包括氧化镁、氧化硅、陶瓷材料、聚烯烃、聚丙烯酸酯中的一种或多种。
  11. 根据权利要求1～10中任一项所述的太阳能器件，其中，所述吸光层远离所述第二电极层的表面呈自陷光结构。
  12. 根据权利要求1～11中任一项所述的太阳能器件，其中，所述吸光层远离所述第二电极层的一侧设置有增透层。
  13. 根据权利要求12所述的太阳能器件，其中，所述增透层还填充于所述第四凹槽内。
  14. 根据权利要求1～13中任一项所述的太阳能器件，其中，所述吸光层包括钙钛矿吸光层、碲化镉吸光层、铜铟镓硒吸光层、砷化镓吸光层、电子给体-电子受体活性层的一种或多种。
  15. 根据权利要求1～14中任一项所述的太阳能器件，其中，各所述太阳能电池中，所述电荷导出组件有多个，多个所述电荷导出组件沿第二方向间隔分布于所述第二电极层的表面，所述第二方向和所述第一方向相交，相邻的所述太阳能电池的所述电荷导出组件中的所述绝缘层一一对应连接。
  16. 根据权利要求15所述的太阳能器件，其中，所述太阳能电池还包括电极引线，多个所述电荷导出组件的所述第一电极层通过所述电极引线连接。
  17. 一种太阳能电池组件，包括分别设置在衬底沿厚度方向的相对的两侧的第一太阳能器件和第二太阳能器件，所述第一太阳能器件和所述第二太阳能器件串联连接；其中，所述第一太阳能器件和所述第二太阳能器件如权利要求1～16中任一项所述的太阳能器件。
  18. 根据权利要求17所述的太阳能电池组件，其中，所述第一太阳能器件的所述第一电极层和所述第二太阳能器件对应的所述第一电极层传输出的载流子相同，其中，位于所述衬底沿其厚度方向一侧的所述第一太阳能器件的所述第一电极层沿第一方向延伸并弯折至所述衬底沿其厚度方向的另一侧，并与位于所述衬底沿其厚度方向另一侧的所述第二太阳能器件的所述第二电极层电连接，所述第一太阳能器件沿第一方向的另一端部的所述第二电极层以及所述第二太阳能器件沿第一方向的另一端部的所述第一电极层分别设置第一汇流条引出。
  19. 根据权利要求17所述的太阳能电池组件，其中，所述第一太阳能器件的所述第一电极层和所述第二太阳能器件的所述第一电极层分别沿第一方向的一侧延伸，所述第一太阳能器件的所述第二电极层和所述第二太阳能器件的所述第二电极层分别沿第一方向的另一侧延伸，所述第一太阳能器件和所述第二太阳能器件的第一电极层延伸处分别设置第一汇流条，所述第一太阳能器件和所述第二太阳能器件的所述第二电极层延伸处分别设置第二汇流条；
    可选的，两个所述第一汇流条电连接引出，和/或，两个所述第二汇流条电连接引出。
  20. 一种用电装置，包括权利要求1～16中任一项所述的太阳能器件或权利要求17～19中任一项所述的太阳能电池组件。
  21. 一种发电装置，包括权利要求1～16中任一项所述的太阳能器件或权利要求17～19中任一项所述的太阳能电池组件。
  22. 一种光伏系统，包括权利要求1～16中任一项所述的太阳能器件或权利要求17～19中任一项所述的太阳能电池组件。
PCT/CN2025/109285 2024-07-18 2025-07-18 太阳能器件、太阳能电池组件、用电装置、发电装置以及光伏系统 Pending WO2026017142A1 (zh)

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CN202422244941.1U CN223402777U (zh) 2024-09-12 2024-09-12 太阳能电池、光伏组件、发电装置及用电装置
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CN221057435U (zh) * 2023-11-06 2024-05-31 武汉敏芯半导体股份有限公司 光电探测器芯片、接近传感器及电子设备

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CN111554814A (zh) * 2020-05-11 2020-08-18 陕西师范大学 一种以钙钛矿材料为基础的集成电路及其制备方法
CN115802773A (zh) * 2021-09-09 2023-03-14 华为技术有限公司 一种太阳能电池器件及其制造方法、电子设备
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