WO2026006337A1

WO2026006337A1 - Techniques for thermal management of a precursor delivery line

Info

Publication number: WO2026006337A1
Application number: PCT/US2025/035083
Authority: WO
Inventors: Marvin Clayton Brees; Davinder Sharma; Uday Pai; Panya Wongsenakhum; Carter STEVENS; Charlie DAMASO
Original assignee: Lam Research Corp
Current assignee: Lam Research Corp
Priority date: 2024-06-27
Filing date: 2025-06-24
Publication date: 2026-01-02
Anticipated expiration: 2026-12-27

Abstract

A substrate processing system having a substrate processing chamber; and an ampoule, fluidically coupled therewith by a flow line having a length of at least five meters, the flow line including at least one metal delivery tube, formed from a first material, and thermally coupled with a thermal control arrangement. The substrate processing system is configured to cause at least a portion of a liquid or solid precursor contained in the ampoule to enter a gaseous state, and to deliver resulting precursor vapor through the flow line to the substrate processing chamber. The thermal control arrangement is configured to maintain temperatures along the flow line between a first temperature and a second temperature, the first temperature being higher than a condensation temperature of the precursor vapor and the second temperature being no greater than 10°C higher than the first temperature.

Description

TECHNIQUES FOR THERMAL MANAGEMENT OF A PRECURSOR DELIVERY LINE

INCORPORATION BY REFERENCE

[0001] A PCT Request Form is filed concurrently with this specification as part of the present application. Each application that the present application claims benefit of or priority to as identified in the concurrently filed PCT Request Form is incorporated by reference herein in their entireties and for all purposes.

BACKGROUND

[0002] In some semiconductor processing operation, e.g., deposition operations, a chemical precursor may be stored in an ampoule and delivered to a process chamber to form a layer on a substrate. A chemical precursor may be mixed with a carrier gas in the ampoule. For some deposition operations, more than one chemical precursor may be delivered to the process chamber.

[0003] The background description provided herein is for the purposes of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

SUMMARY

[0004] Techniques, in a substrate processing system, for thermal management of a precursor vapor delivery line, where a thermal control arrangement is configured to maintain temperatures along the delivery line between a first temperature and a second temperature, the first temperature being higher than a condensation temperature of the precursor vapor and the second temperature being no greater than 10°C higher than the first temperature.

[0005] According to some embodiments, a substrate processing system includes: a substrate processing chamber; an ampoule, fluidically coupled with and disposed between the substrate processing chamber and a source of carrier gas, the ampoule comprising an enclosure for containing a solid or liquid precursor and a control valve arrangement comprising at least an outlet valve disposed between the enclosure and the substrate processing chamber; and a flow line fluidically coupling the outlet valve with the substrate processing chamber, the flow line comprising at least one metal delivery tube, formed from a first material and thermally coupled with a thermal control arrangement. The substrate processing system is configured to cause at least a portion of the liquid or solid precursor to enter a gaseous state, and to cause the carrier gas to deliver resulting precursor vapor through the flow line to the substrate processing chamber, and the thermal control arrangement is configured to maintain temperatures along the flow line between a first temperature and a second temperature, the first temperature being higher than a condensation temperature of the precursor vapor and the second temperature being no greater than 10°C above the first temperature.

[0006] In some examples, the flow line may have a length of at least five meters, and the thermal control arrangement may include a sheathing disposed over and thermally coupled with the metal delivery tube, the sheathing being formed from a second material having a thermal conductivity at least ten times greater than the first material.

[0007] In some examples, the sheathing may include an outer tube having an inner diameter configured to provide a slip fit over a wall of the metal delivery tube. In some examples, the sheathing may include an outer tube having an inner diameter configured to provide a press fit over a wall of the metal delivery tube. In some examples, the inner diameter of the outer tube may be 0.2-2 mm larger than an outer diameter of the metal delivery tube.

[0008] In some examples, the metal delivery tube may be formed from a corrosion resistant steel or metal alloy having a thermal conductivity of about 10-15 W/M°C and the sheathing may be formed from a material having a thermal conductivity of at least 200 W/M°C. In some examples, the first material may include SAE grade 316L stainless steel and/or a UNS N06022 alloy. In some examples, the second material comprises one or more of aluminum, copper and/or a graphite composite material. In some examples, the second material may include a UNS N96061 aluminum alloy. In some examples, the thermal control arrangement may include a plurality of heaters and temperature sensors. In some examples, the system may further include at least one controller, operatively coupled with the plurality of temperature sensors and heaters, and configured to control the heaters so as to maintain temperatures along the flow line between the first temperature and the second temperature.

[0009] In some examples, the metal delivery tube may have an outer diameter between about 5 mm and about 30 mm.

[0010] In some examples, the flow line may have a length of 10-100 meters and the metal delivery tube has an outer diameter of 10-20 mm.

[0011] In some examples, the metal delivery tube may have an outer diameter between about 9 mm and about 15 mm.

[0012] In some examples, the condensation temperature may be between 120-160°C. [0013] According to some embodiments, a method for substrate processing includes operating a substrate processing system, the system comprising: a substrate processing chamber; an ampoule, fluidically coupled with and disposed between the substrate processing chamber and a source of carrier gas, the ampoule comprising an enclosure for containing a solid or liquid precursor and a control valve arrangement comprising at least an outlet valve disposed between the enclosure and the substrate processing chamber; and a flow line fluidically coupling the outlet valve with the substrate processing chamber, the flow line comprising at least one metal delivery tube, formed from a first material and thermally coupled with a thermal control arrangement. Operating the substrate processing system includes: causing at least a portion of the liquid or solid precursor to enter a gaseous state; causing the carrier gas to deliver resulting precursor vapor through the flow line to the substrate processing chamber; and maintaining temperatures along the flow line, with the thermal control arrangement, between a first temperature and a second temperature, the first temperature being higher than a condensation temperature of the resulting precursor vapor and the second temperature being no greater than 10°C above the first temperature.

[0014] In some examples, the flow line may have a length of at least five meters, and the thermal control arrangement may include a sheathing disposed over and thermally coupled with the metal delivery tube, the sheathing being formed from a second material having a thermal conductivity at least ten times higher than the first material. In some examples, the sheathing may include an outer tube having an inner diameter configured to provide a slip fit over an outer wall of the metal delivery tube. In some examples, the sheathing may include an outer tube having an inner diameter configured to provide a press fit over an outer wall of the metal delivery tube. In some examples, the second material may include one or more of aluminum, copper and/or a graphite composite material. In some examples, the thermal control arrangement may include a plurality of heaters and temperature sensors, communicatively coupled with at least one controller. In some examples, the at least one controller is operatively coupled with the plurality of temperature sensors and heaters, and the method further comprises the controller operating the heaters, responsive to data from the temperature sensors, to maintain temperatures along the flow line between the first temperature and the second temperature.

[0015] According to some embodiments, an apparatus includes a flow line thermally coupled with a thermal control arrangement, the flow line disposed between a substrate processing chamber and an ampoule. The ampoule is fluidically coupled with and disposed between the substrate processing chamber and a source of carrier gas, the ampoule comprising an enclosure for containing a solid or liquid precursor and a control valve arrangement comprising at least an outlet valve disposed between the enclosure and the substrate processing chamber. The flow line fluidically couples the outlet valve with the substrate processing chamber, the flow line including at least one metal delivery tube, formed from a first material. The substrate processing system is configured to cause at least a portion of the liquid or solid precursor to enter a gaseous state, and to cause the carrier gas to deliver resulting precursor vapor through the flow line to the substrate processing chamber. The thermal control arrangement is configured to maintain temperatures along the flow line between a first temperature and a second temperature, the first temperature being higher than a condensation temperature of the precursor vapor and the second temperature being no greater than 10°C above the first temperature.

[0016] In some examples, the flow line may have a length of at least five meters and the thermal control arrangement may include a sheathing disposed over and thermally coupled with the metal delivery tube, the sheathing being formed from a second material having a thermal conductivity at least ten times greater than the first material. In some examples, the sheathing may include an outer tube having an inner diameter configured to provide a slip fit over a wall of the metal delivery tube. In some examples, the sheathing may include an outer tube having an inner diameter configured to provide a press fit over a wall of the metal delivery tube.

[0017] In some examples, the inner diameter of the outer tube may be 0.2-2 mm larger than an outer diameter of the metal delivery tube. In some examples, the metal delivery tube may be formed from a corrosion resistant steel or metal alloy having a thermal conductivity of about 10-15 W/M°C and the sheathing is formed from a material having a thermal conductivity of at least 200 W/M°C. In some examples, the first material may include SAE grade 316L stainless steel and/or a UNS N06022 alloy. In some examples, the second material may include one or more of aluminum, copper and/or a graphite composite material. In some examples, the second material may include a UNS N96061 aluminum alloy. In some examples, the thermal control arrangement may include a plurality of heaters and temperature sensors. In some examples, the metal delivery tube may have an outer diameter between 5 mm and 30 mm. In some examples, the flow line may have a length of 10-100 meters and the metal delivery tube may have an outer diameter of 10-20 mm. In some examples, the metal delivery tube may have an outer diameter between 9 mm and 15 mm. In some examples, the condensation temperature may be between 120- 160 °C. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 depicts a schematic representation of an example substrate processing system according to some embodiments.

[0019] Figure 2 shows an example of flow line arrangement for transporting precursor vaper from an ampoule to a processing chamber, according to some embodiments.

[0020] Figure 3 illustrates a simplified block diagram of an example of a system in accordance with some implementations.

[0021] Figure 4 illustrates a process flow diagram for a method of substrate processing according to some embodiments.

DETAILED DESCRIPTION

[0022] In the following description, numerous specific details are set forth to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all these specific details. In other instances, well-known process operations have not been described in detail to not unnecessarily obscure the disclosed embodiments. While the disclosed embodiments will be described in conjunction with the specific embodiments, it will be understood that it is not intended to limit the disclosed embodiments.

[0023] The subscripts “x” and “y” are used throughout the disclosure to denote a number greater than zero that forms a stable compound. However, it should be noted that the lack of an “x” or other subscript (e.g., in titanium nitride (TiN) or titanium oxynitride (TiON)) does not imply a particular atomic ratio.

[0024] In the present disclosure, the terms “semiconductor wafer,” “wafer,” and “substrate,” and are used interchangeably. The following detailed description relates to techniques for thermal management of chemical precursors being delivered from an ampoule to a process chamber to form a layer on a workpiece such as a wafer or substrate. However, the present disclosure is not so limited. The work piece may be of various shapes, sizes, and materials. In addition to semiconductor wafers, other work pieces that may take advantage of the present disclosure include various articles such as printed circuit boards and the like.

[0025] Semiconductor device manufacturing typically involves various deposition processes to deposit films to form integrated circuits and related devices on the substrate by various methods including CVD, PECVD, ALD, or PEALD, where a gas mixture including one or more precursors may be introduced into the process chamber to deposit a film on the substrate. In some substrate processing systems, a radio frequency (RF) plasma may be used to activate chemical reactions. ALD or PEALD are film deposition processes which are well-suited to the deposition of conformal films due to the fact that a single cycle of ALD or PEALD deposits a single thin layer of material, the thickness being limited by the amount of one or more precursors which may adsorb onto the substrate surface (i.e., forming an adsorption-limited layer) prior to the film-forming chemical reaction itself.

[0026] For providing one or more precursors, CVD, PECVD, ALD, or PEALD processes may be provided with a precursor delivery system. The precursor delivery system may typically include one or more ampoules. Some implementations of semiconductor processing that use a precursor may include hardware, and may implement methods, to deliver the precursor to the processing chamber. In certain implementations of semiconductor processing, gaseous precursor chemicals evaporated or sublimated from a liquid or solid precursor contained in an ampoule are transported to and/or deposited on a semiconductor wafer. A carrier gas, which may be an inert gas (such as argon), a non-inert gas (such as oxygen), or a non-inert gas mixture (such as oxygen and argon), may flow through the ampoule to carry the gaseous precursor chemicals to a semiconductor processing chamber. Carrier gas may be either “pushed” (where gas is forced through the lines) or “pulled” (where gas is pulled through the lines, possibly via a vacuum) through the ampoule to carry the evaporated precursor. Throughout this disclosure, the term “precursor” may refer to precursors in solid, liquid and vapor states.

[0027] Figure 1 depicts a schematic representation of an example substrate processing system. In the illustrated example, a precursor delivery system 100 includes a flow controller 102, an ampoule 1000, and a processing chamber 128 that are connected to a series of pipes and valves through which fluid, e.g., liquid and/or gas, may flow, generally in the direction shown in Figure 1 by arrows. Accordingly, for example, the flow controller 102 may be considered upstream from the ampoule 1000 which in turn is upstream from the process chamber 128.

[0028] The flow controller 102 is connected downstream from valve 106 and upstream from the rest of the system. A carrier (or “push”) gas, or other fluid, may flow into the system through valve 106 and then through flow controller 102. In some implementations, the flow controller 102 controls the flow of the push gas or other fluid. Flow controller 102 is upstream from valve 108, which is upstream from the ampoule 1000. As illustrated, the ampoule 1000 includes an enclosure 1100, in which solid or liquid precursor is contained, and a control valve arrangement 1200.

[0029] The ampoule 1000 may typically include a solid or liquid precursor 1104. As a result of heating the precursor 1104, evaporated or sublimated gaseous precursor chemicals (“precursor vapor”) may accumulate in region 1103, and may be delivered, with the carrier gas, to the processing chamber 128. In the illustrated example, the carrier gas, together with precursor vapor exits the ampoule 1000 and proceeds, via flow line 118, to a semiconductor processing chamber 128. It will be appreciated that there may be other components disposed between the ampoule 1000 and the process chamber (e.g., additional control valves, a mixing assembly, and/or other apparatus that have been omitted for clarity of illustration). In the illustrated example, a controller 160 is communicatively coupled with the ampoule 1000 and may be configured to send actuation commands (e.g., valve open/valve close) to the control valve arrangement 1200 and/or to receive data therefrom (e.g., temperature, valve piston position or other data).

[0030] In the illustrated example, control valve arrangement 1200 includes an inlet valve 1202, an outlet valve 1206, and a bypass valve 1204, so arranged as to control whether or not the precursor vapor flows to the processing chamber. For example, when inlet valve 1202 and outlet valve 1206 are both open and bypass valve 1204 is closed, precursor vapor from region 1103 may be caused by the carrier gas to flow through flow line 118 to the processing chamber 128. The flow line 118 may include one or more metal delivery tubes. The metal delivery tubes may typically have an outside diameter of less than 20 mm, and, in some implementations, approximately 10 mm (e.g., 0.375 inches). Two or more of the metal delivery tubes may be joined by, for example, coupling fittings that may be straight or curved (e.g., elbow fittings). In a typical installation, a length of the flow line 118 may be about 5 to 100 meters. Accordingly, a ratio of length to diameter of the flow line may be on the order of 250 to 10000. [0031] The precursor vapor exiting the ampoule may be at a temperature of about 130-170 °C, in an example implementation. To prevent condensation of the precursor vapor throughout the length of the flow line, a thermal control arrangement may be provided that includes heaters and insulating materials disposed around the metal tubes and/or connecting fittings, and a controller, operatively coupled with the heaters and temperature sensors, that is configured to maintain temperatures along the flow line above the condensation temperature (dew point) of the precursor vapor. For example, the thermal control arrangement may be configured to maintain the temperatures along the flow line temperatures at or above 150°C or higher.

[0032] In some implementations, the precursor vapor may include corrosive chemicals that present a risk of damaging the interior walls of the metal tubes. Moreover, corrosion products from the interior walls may contaminate the precursor vapor, resulting in adverse effects on the downstream substrate processing operation. Accordingly, in some implementations, the metal delivery tubes may be fabricated primarily from corrosion resistant stainless steel (e.g., SAE grade 316L stainless steel). In some implementations, the metal delivery tubes may be fabricated from an austenitic, nickel-chromium-molybdenum-tungsten alloy such as those having the universal designation UNS N06022, for example. INCONEL®, available from the Special Metals Corporation group of companies and HASTELLOY®, available from Haynes International Inc. are examples of suitable materials for these applications.

[0033] Corrosion rates increase with increased temperature, and corrosion problems may not be totally eliminated by use of corrosion resistant steels or metal alloys. Thus, it is desirable to maintain the flow line temperature as low as possible while still exceeding the dew point of the precursor vapor. For example, maintaining the temperature below a value that is no more thanl0-20 degrees above the dew point temperature, may be desirable.

[0034] In the absence of the presently disclosed techniques, achieving such tight temperature regulation has been problematic. Notwithstanding that the length of the flow line 118 may be configured with multiple separately controlled heater zones, experience has shown that local hot or cold spots are unavoidable without costly and labor intensive local adjustments to, for example, heaters and/or insulation.

[0035] The present inventors have appreciated that such temperature non-uniformities may result in part from the relatively low thermal conductivity of corrosion resistant steels or alloys (typically 10-15 W/M°C). According to some implementations, the temperature nonuniformities may be reduced by configuring a thermal control arrangement that envelops the metal delivery tubes with sheathing fabricated from a more thermally conductive material such as, for example, aluminum or copper, or alloys thereof, and/or a graphite composite material. In implementations using a graphite composite sheathing, the sheathing may be formed by wrapping sheets of the graphite composite material over the metal delivery tube.

[0036] In some implementations, the sheathing may include an outer tube of aluminum or copper, or alloys thereof. The outer tube, in some implementations, may be fabricated from an aluminum alloy such as those having the universal designation UNS N96061, for example. Referring now to Figure 2, a portion of a flow line 218 is illustrated. In the illustrated example, flow line 218 includes an inner metal delivery tube 2181 sheathed by an outer tube 2182. Advantageously, the outer tube 2182 may have an inner diameter (ID2) that is only slightly larger than an outer diameter (OD1) of the metal delivery tube. As a result, a “slip fit” between the outer tube and the metal delivery tube may be provided while still maintaining a good heat transfer coupling between the tubes. For example, where the metal delivery tube has an outer diameter of about 9.5 mm (e.g., 0.375 inches), the outer tube may have an inner diameter of about 10 mm. In some implementations, the outer tube may have an outer diameter (OD2) of about 12.7 mm (e.g., 0.5 inches) and a wall thickness of about 1.2 mm (e.g., 0.049 inches). In yet other implementations, the outer tube may have an inner diameter approximately equal to the outer diameter of the inner tube, and a “press fit” of the two tubes may be contemplated.

[0037] Because of the relatively high thermal conductivity of aluminum, copper, and graphite composites (over 200 W/M°C), heat transferred from the delivery tube 2181 to the outer tube 2182 becomes more evenly distributed along the length of the tubes, and temperature nonuniformity along the length of the metal delivery tubes is significantly reduced.

[0038] As may be observed in the following table, in the absence of the presently disclosed techniques, the measured temperature at three locations of a typical length of flow line has been found to have a non-uniformity in the range of 13-20°C range, even after manually adjusting heaters and insulation in localized areas to minimize the spread. With the presently disclosed techniques, the inventors have found that temperature non-uniformity can be reduced to less than 10°C, even in the absence of such manual adjustments to heaters and insulation.

[0039] Figure 3 illustrates a simplified block diagram of an example of a substrate processing system in accordance with some implementations. In the illustrated example, a system 300 includes the ampoule 1000 fluidically coupled by the flow line 118 with the processing chamber 128. A solid or liquid precursor disposed in the ampoule 1000 may be caused to sublimate, and the ampoule 1000 may deliver resulting precursor vapor to the processing chamber 128. The flow line 118 may include a metal delivery tube formed from a first material and may be thermally coupled with a thermal control arrangement 350. As describe hereinabove, the thermal control arrangement may include an outer tube disposed over a metal delivery tube and having an inner diameter configured to provide a slip fit over an outer wall of the metal delivery tube. The outer tube may be formed from a second material having a thermal conductivity at least ten times higher than the first material. The thermal control arrangement 350 may include a plurality of heaters and temperature sensors. A controller 160 may be configured to maintain temperatures along the flow line 118 between a first temperature and a second temperature, the first temperature being higher than a condensation temperature of the precursor vapor and the second temperature being no greater than 10°C higher than the first temperature.

[0040] The controller 360 will typically include one or more memory devices and one or more processors. A processor may include a CPU or computer, analog and/or digital input/output connections, stepper motor controller boards, etc.

[0041] There may be a user interface associated with the controller 360. The user interface may include a display screen, graphical software displays of the apparatus and/or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, etc.

[0042] System control logic may be configured in any suitable way. In general, the logic can be designed or configured in hardware and/or software. The instructions for controlling the drive circuitry may be hard coded or provided as software. The instructions may be provided by “programming.” Such programming is understood to include logic of any form, including hard coded logic in digital signal processors, application-specific integrated circuits, and other devices which have specific algorithms implemented as hardware. Programming is also understood to include software or firmware instructions that may be executed on a general- purpose processor. System control software may be coded in any suitable computer readable programming language.

[0043] The computer program code may be written in any conventional computer readable programming language: for example, assembly language, C, C++, Pascal, Fortran, or others. Compiled object code or script is executed by the processor to perform the tasks identified in the program. Also as indicated, the program code may be hard coded.

[0044] Broadly speaking, the controller 360 may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, and control operations. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system.

[0045] The controller 360, in some implementations, may be a part of or coupled to a computer that is integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller 360 may be in the “cloud” or all or a part of a fabrication host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. The parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by including one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

[0046] Referring now to Figure 4, a method 400 for substrate processing will be described. The method may include operating a substrate processing system that, as described above, includes a substrate processing chamber, a source of a carrier gas, and an ampoule, fluidically coupled with and disposed between the substrate processing chamber and the source of the carrier gas. The ampoule may include an enclosure for containing a solid or liquid precursor and a control valve arrangement comprising at least an outlet valve disposed between the enclosure and the substrate processing chamber. The system may include a flow line having a length of at least five meters, fluidically coupling the outlet valve with the substrate processing chamber, the flow line including at least one metal delivery tube, formed from a first material, and thermally coupled with a thermal control arrangement.

[0047] At block 410, in the illustrated example, at least a portion of the liquid or sold precursor may be caused to enter a gaseous state.

[0048] At block 420, the carrier gas may be caused to deliver resulting precursor vapor through a flow line to the substrate processing chamber.

[0049] At block 430, temperatures may be maintained, along the flow line, with the thermal control arrangement, between a first temperature and a second temperature, the first temperature being higher than a condensation temperature of the gaseous precursor and the second temperature being no greater than 10°C higher than the first temperature.

[0050] Optionally, at block 450, operate heaters may be operated, responsive to data from temperature sensors to maintain temperatures along the flow line between the first temperature and the second temperature.

[0051] It is to be understood that the above disclosure, while focusing on a particular example implementation or implementations, is not limited to only the discussed example, but may also apply to similar variants and mechanisms as well, and such similar variants and mechanisms are also considered to be within the scope of this disclosure. For example, the above disclosure is directed to at least, but not exclusively, the following numbered implementations.

[0052] Implementation 1: An apparatus comprising: a flow line thermally coupled with a thermal control arrangement, the flow line disposed between a substrate processing chamber and an ampoule, wherein: the ampoule is fluidically coupled with and disposed between the substrate processing chamber and a source of carrier gas, the ampoule comprising an enclosure for containing a solid or liquid precursor and a control valve arrangement comprising at least an outlet valve disposed between the enclosure and the substrate processing chamber; the flow line fluidically couples the outlet valve with the substrate processing chamber, the flow line comprising at least one metal delivery tube, formed from a first material; the substrate processing system is configured to cause at least a portion of the liquid or solid precursor to enter a gaseous state, and to cause the carrier gas to deliver resulting precursor vapor through the flow line to the substrate processing chamber; and the thermal control arrangement is configured to maintain temperatures along the flow line between a first temperature and a second temperature, the first temperature being higher than a condensation temperature of the precursor vapor and the second temperature being no greater than 10°C above the first temperature.

[0053] Implementation 2: The apparatus of implementation 1, wherein: the flow line has a length of at least five meters; and the thermal control arrangement comprises a sheathing disposed over and thermally coupled with the metal delivery tube, the sheathing being formed from a second material having a thermal conductivity at least ten times greater than the first material.

[0054] Implementation 3: The apparatus of implementation 2, wherein the sheathing comprises an outer tube having an inner diameter configured to provide a slip fit over a wall of the metal delivery tube.

[0055] Implementation 4: The apparatus of implementation 2, wherein the sheathing comprises an outer tube having an inner diameter configured to provide a press fit over a wall of the metal delivery tube.

[0056] Implementation 5: The apparatus of implementation 4, wherein the inner diameter of the outer tube is 0.2-2 mm larger than an outer diameter of the metal delivery tube.

[0057] Implementation 6: The apparatus of implementation 2, wherein the metal delivery tube is formed from a corrosion resistant steel or metal alloy having a thermal conductivity of about 10-15 W/M°C and the sheathing is formed from a material having a thermal conductivity of at least 200 W/M°C.

[0058] Implementation 7: The apparatus of implementation 6, wherein the first material comprises SAE grade 316L stainless steel and/or a UNS N06022 alloy.

[0059] Implementation 8: The apparatus of implementation 6, wherein the second material comprises one or more of aluminum, copper and/or a graphite composite material.

[0060] Implementation 9: The apparatus of implementation 6, wherein the second material comprises a UNS N96061 aluminum alloy.

[0061] Implementation 10: The apparatus of implementation 2, wherein the thermal control arrangement comprises a plurality of heaters and temperature sensors.

[0062] Implementation 11 : The apparatus of implementation 2, wherein the metal delivery tube has an outer diameter between 5 mm and 30 mm.

[0063] Implementation 12: The apparatus of implementation 2, wherein the flow line has a length of 10-100 meters and the metal delivery tube has an outer diameter of 10-20 mm.

[0064] Implementation 13: The apparatus of implementation 2, wherein the metal delivery tube has an outer diameter between 9 mm and 15 mm.

[0065] Implementation 14: The apparatus of implementation 2, wherein the condensation temperature is between 120-160°C.

Conclusion

[0066] Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing the processes, systems, and apparatus of the present embodiments. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the embodiments are not to be limited to the details given herein.

Claims

CLAIMS What is claimed is:

1. A substrate processing system comprising: a substrate processing chamber; an ampoule, fluidically coupled with and disposed between the substrate processing chamber and a source of carrier gas, the ampoule comprising an enclosure for containing a solid or liquid precursor and a control valve arrangement comprising at least an outlet valve disposed between the enclosure and the substrate processing chamber; and a flow line fluidically coupling the outlet valve with the substrate processing chamber, the flow line comprising at least one metal delivery tube, formed from a first material, and thermally coupled with a thermal control arrangement, wherein: the substrate processing system is configured to cause at least a portion of the liquid or solid precursor to enter a gaseous state, and to cause the carrier gas to deliver resulting precursor vapor through the flow line to the substrate processing chamber; and the thermal control arrangement is configured to maintain temperatures along the flow line between a first temperature and a second temperature, the first temperature being higher than a condensation temperature of the precursor vapor and the second temperature being no greater than 10 °C above the first temperature.

2. The substrate processing system of claim 1, wherein: the flow line has a length of at least five meters; and the thermal control arrangement comprises a sheathing disposed over and thermally coupled with the metal delivery tube, the sheathing being formed from a second material having a thermal conductivity at least ten times greater than the first material.

3. The substrate processing system of claim 2, wherein the sheathing comprises an outer tube having an inner diameter configured to provide a slip fit over a wall of the metal delivery tube.

4. The substrate processing system of claim 2, wherein the sheathing comprises an outer tube having an inner diameter configured to provide a press fit over a wall of the metal delivery tube.

5. The substrate processing system of claim 3, wherein the inner diameter of the outer tube is 0.2-2 mm larger than an outer diameter of the metal delivery tube.

6. The substrate processing system of claim 2, wherein the metal delivery tube is formed from a corrosion resistant steel or metal alloy having a thermal conductivity of about 10-15 W/M°C and the sheathing is formed from a material having a thermal conductivity of at least 200 W/M°C.

7. The substrate processing system of claim 6, wherein the first material comprises SAE grade 316L stainless steel and/or a UNS N06022 alloy.

8. The substrate processing system of claim 6, wherein the second material comprises one or more of aluminum, copper and/or a graphite composite material.

9. The substrate processing system of claim 6, wherein the second material comprises a UNS N96061 aluminum alloy.

10. The substrate processing system of claim 2, wherein the thermal control arrangement comprises a plurality of heaters and temperature sensors.

11. The substrate processing system of claim 10, further comprising at least one controller, operatively coupled with the plurality of temperature sensors and heaters, and configured to control the heaters so as to maintain temperatures along the flow line between the first temperature and the second temperature.

12. The substrate processing system of claim 2, wherein the metal delivery tube has an outer diameter between 5 mm and 30 mm.

13. The substrate processing system of claim 2, wherein the flow line has a length of 10-100 meters and the metal delivery tube has an outer diameter of 10-20 mm.

14. The substrate processing system of claim 13, wherein the metal delivery tube has an outer diameter between 9 mm and 15 mm.

15. The substrate processing system of claim 2, wherein the condensation temperature is between 120-160°C.

16. A method for substrate processing, the method comprising: operating a substrate processing system, the system comprising: a substrate processing chamber; an ampoule, fluidically coupled with and disposed between the substrate processing chamber and a source of carrier gas, the ampoule comprising an enclosure for containing a solid or liquid precursor and a control valve arrangement comprising at least an outlet valve disposed between the enclosure and the substrate processing chamber; and a flow line fluidically coupling the outlet valve with the substrate processing chamber, the flow line comprising at least one metal delivery tube, formed from a first material, and thermally coupled with a thermal control arrangement, wherein: operating the substrate processing system comprises: causing at least a portion of the liquid or solid precursor to enter a gaseous state; causing the carrier gas to deliver resulting precursor vapor through the flow line to the substrate processing chamber; and maintaining temperatures along the flow line, with the thermal control arrangement, between a first temperature and a second temperature, the first temperature being higher than a condensation temperature of the resulting precursor vapor and the second temperature being no greater than 10°C above the first temperature.

17. The method of claim 16, wherein: the flow line has a length of at least five meters; and the thermal control arrangement comprises a sheathing disposed over and thermally coupled with the metal delivery tube, the sheathing being formed from a second material having a thermal conductivity at least ten times greater than the first material.

18. The method of claim 17, wherein the sheathing comprises an outer tube having an inner diameter configured to provide a slip fit over an outer wall of the metal delivery tube.

19. The method of claim 17, wherein the sheathing comprises an outer tube having an inner diameter configured to provide a press fit over an outer wall of the metal delivery tube.

20. The method of claim 17, wherein the second material comprises one or more of aluminum, copper and/or a graphite composite material.

21. The method of claim 17, wherein the thermal control arrangement comprises a plurality of heaters and temperature sensors, communicatively coupled with at least one controller.

22. The method of claim 21, wherein the at least one controller is operatively coupled with the plurality of temperature sensors and heaters, and the method further comprises the controller operating the heaters, responsive to data from the temperature sensors, to maintain temperatures along the flow line between the first temperature and the second temperature.