WO2025260830A1 - 一种太阳能电池和光伏组件 - Google Patents

一种太阳能电池和光伏组件

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Publication number
WO2025260830A1
WO2025260830A1 PCT/CN2025/080265 CN2025080265W WO2025260830A1 WO 2025260830 A1 WO2025260830 A1 WO 2025260830A1 CN 2025080265 W CN2025080265 W CN 2025080265W WO 2025260830 A1 WO2025260830 A1 WO 2025260830A1
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WIPO (PCT)
Prior art keywords
semiconductor portion
solar cell
doped
doped semiconductor
conductive semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/080265
Other languages
English (en)
French (fr)
Inventor
李振国
童洪波
谭善
孙恒
於龙
徐新星
靳玉鹏
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Longi Green Energy Technology Co Ltd
Original Assignee
Longi Green Energy Technology Co Ltd
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Publication date
Application filed by Longi Green Energy Technology Co Ltd filed Critical Longi Green Energy Technology Co Ltd
Publication of WO2025260830A1 publication Critical patent/WO2025260830A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
    • H10F77/1227—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1243—Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants

Definitions

  • This application relates to the field of photovoltaic technology, and more particularly to a solar cell and a photovoltaic module.
  • a solar cell is a device that converts sunlight into electrical energy. Specifically, when a solar cell is in operation, sunlight shines on the semiconductor p-n junction of the solar cell, forming new electron-hole pairs. Under the influence of the built-in electric field of the p-n junction, photogenerated holes flow to the p-region, and photogenerated electrons flow to the n-region. When the circuit is connected, an electric current is generated.
  • the two doped semiconductor sections with opposite conductivity types within the solar cell need to be spaced apart to suppress forward leakage and ensure high photoelectric conversion efficiency in the forward voltage region.
  • the resistance between them is high, resulting in a higher reverse breakdown voltage and a higher risk of hot spots.
  • existing solar cells mitigate the hot spot risk to some extent by locally electrically connecting the two doped semiconductor sections with opposite conductivity types.
  • the purpose of this application is to provide a solar cell and a photovoltaic module, in which only a portion of a first doped semiconductor portion and only a portion of a second doped semiconductor portion with opposite conductivity types are electrically connected through a conductive semiconductor portion, and the ratio between the transmission resistance heating power corresponding to all conductive semiconductor portions included in the solar cell and the reverse leakage power corresponding to the solar cell is reasonably set.
  • the leakage loss of the solar cell is effectively controlled, and on the other hand, the reverse breakdown voltage and hot spot risk of the solar cell are effectively reduced, so that the solar cell has a high resistance to burnout under reverse leakage.
  • this application provides a solar cell comprising: a semiconductor substrate, a first doped semiconductor portion, a second doped semiconductor portion, and at least one conductive semiconductor portion.
  • the first doped semiconductor portion is disposed within or on the semiconductor substrate.
  • the second doped semiconductor portion is disposed within or on the semiconductor substrate.
  • the conductivity type of the second doped semiconductor portion is opposite to that of the first doped semiconductor portion.
  • Each conductive semiconductor portion is at least partially located between the first and second doped semiconductor portions, and is electrically connected to only a portion of the first and second doped semiconductor portions through the at least one conductive semiconductor portion.
  • the heat transfer power corresponding to all conductive semiconductor portions included in the solar cell is P1, the reverse leakage power corresponding to the solar cell is P2, and the ratio A between P1 and P2 is greater than or equal to 2% and less than or equal to 50%.
  • the first doped semiconductor portion and the second doped semiconductor portion in the solar cell provided in this application have opposite conductivity types. Furthermore, each conductive semiconductor portion of the solar cell is at least partially located between the first doped semiconductor portion and the second doped semiconductor portion, and only a portion of the first doped semiconductor portion and only a portion of the second doped semiconductor portion are electrically connected through at least one conductive semiconductor portion. Based on this, the area between the first doped semiconductor portion and the second doped semiconductor portion where no at least one conductive semiconductor portion is disposed can be separated by physical spacing such as insulating trenches, or by non-conductive structures such as chemical films made of insulating materials or intrinsic semiconductor materials. This prevents the solar cell from having a large leakage current under normal operating conditions due to the presence of conductive semiconductor portions between all areas of the first and second doped semiconductor portions, thus avoiding low operating efficiency.
  • the resistance of the region between the first and second doped semiconductor sections without the aforementioned conductive semiconductor section is relatively high.
  • the conductive semiconductor section has relatively good conductivity, and by creating a local leakage point, the first and second doped semiconductor sections can be electrically connected to form a built-in diode with a relatively low reverse breakdown voltage. Therefore, the resistance of the region between the first and second doped semiconductor sections with the conductive semiconductor section is relatively low.
  • the reverse leakage current will flow from one of the first and second doped semiconductor sections through the region where the conductive semiconductor section is located to the other.
  • the ratio A between P1 and P2 is greater than or equal to 2% and less than or equal to 30%.
  • the ratio A between the resistance heating power P1 of all conductive semiconductor parts included in the solar cell and the reverse leakage power P2 of the solar cell is within the above range. This helps to prevent excessively high requirements on the reverse leakage current transmission capability of the conductive semiconductor parts due to a small ratio A, and helps to reduce the design difficulty of the solar cell.
  • the ratio A is less than 30%, the resistance heating power of all conductive semiconductor parts included in the solar cell is relatively small, which can further reduce the local heat loss of the solar cell when a reverse bias voltage is applied, and further improve the burn-out resistance of the solar cell under reverse leakage conditions.
  • the portion of the conductive semiconductor portion located between the first doped semiconductor portion and the second doped semiconductor portion has B regions along its length.
  • the conductivity type of each region along its length is opposite to that of either the first or second doped semiconductor portion;
  • B is a positive integer greater than or equal to 1.
  • the ratio A between P1 and P2 satisfies the formula:
  • Im is the maximum power point current of the solar cell
  • Rsq1 to RsqB are the sheet resistances of the corresponding regions of a single conductive semiconductor part
  • L1 to LB are the effective current transmission lengths of the corresponding regions of a single conductive semiconductor part
  • Vr is the reverse breakdown voltage of the solar cell
  • N is the total number of conductive semiconductor parts included in the solar cell
  • a1 to aB are the average widths of the corresponding regions of a single conductive semiconductor part.
  • the transmission resistance heating power P1 corresponding to all conductive semiconductor parts of the solar cell can be controlled, ensuring that the solar cell has high resistance to burnout under reverse leakage conditions while improving the applicability of the solar cell provided in this application in different application scenarios.
  • the aforementioned solar cell also includes connecting electrodes. Different regions of the connecting electrodes, distributed continuously along their length, have the same conductivity type and are spaced apart from adjacent structures with opposite conductivity types.
  • the connecting electrode has a lower transmission resistance compared to the conductive semiconductor part. Therefore, when the solar cell is shaded, the reverse leakage current flowing to the conductive semiconductor part will preferentially flow through the connecting electrode, rather than the portion of the conductive semiconductor part covered by the connecting electrode. This further reduces the value of the ratio A between P1 and P2, i.e., reduces the heat generated by the conductive semiconductor part during reverse leakage, further improving the solar cell's resistance to burn-out under reverse leakage conditions. Furthermore, the connecting electrode has the same conductivity type in different regions continuously distributed along its length, and is spaced apart from adjacent structures with opposite conductivity types. This prevents short circuits caused by heterogeneous overlap between different regions of the connecting electrode along its length, ensuring high electrical reliability of the solar cell.
  • the ratio A between P1 and P2 is greater than or equal to 2% and less than or equal to 45%.
  • the upper limit of the ratio A between P1 and P2 can be further reduced, thereby reducing the maximum heat generation of the conductive semiconductor during reverse leakage and further improving the solar cell's resistance to burnout under reverse leakage conditions.
  • the portion of the conductive semiconductor portion located between the first doped semiconductor portion and the second doped semiconductor portion has B regions along its length.
  • the conductivity type of each region along its length is opposite to that of either the first or second doped semiconductor portion;
  • B is a positive integer greater than or equal to 1.
  • the ratio A between P1 and P2 satisfies the formula:
  • Im is the maximum power point current of the solar cell
  • Rsq1 to RsqB are the sheet resistances of the corresponding regions of a single conductive semiconductor part
  • L′ 1 to L′ B are the effective current transmission lengths of the portions of the corresponding regions of a single conductive semiconductor part that do not correspond to the connected electrodes
  • Vr is the reverse breakdown voltage of the solar cell
  • N is the total number of conductive semiconductor parts included in the solar cell
  • a′1 to a′B are the average widths of the portions of the corresponding regions of a single conductive semiconductor part that do not correspond to the connected electrodes
  • Re is the equivalent resistance of the transmission resistance of the connected electrode, the contact resistance corresponding to the connected electrode, and the transmission resistance of the structure in contact with the connected electrode.
  • the transmission resistance heating power P1 corresponding to all conductive semiconductor parts of the solar cell can be comprehensively and precisely controlled. This ensures that the solar cell has high resistance to burnout under reverse leakage conditions while improving the applicability of the solar cell provided in this application in different application scenarios.
  • At least one conductive semiconductor portion has a docking junction itself, or one of the first doped semiconductor portion and the second doped semiconductor portion forms a docking junction with at least one conductive semiconductor portion.
  • the docking junction includes an N-type doped portion and a P-type doped portion electrically in contact with the N-type doped portion.
  • the product of the carrier concentration in the N-type doped portion and the carrier concentration in the P-type doped portion is greater than or equal to 1 ⁇ 1037 cm ⁇ 6 and less than or equal to 1 ⁇ 1042 cm ⁇ 6 ; and/or, the carrier concentration in the N-type doped portion is greater than or equal to 1 ⁇ 1019 cm ⁇ 3 and less than or equal to 1 ⁇ 1021 cm ⁇ 3 ; and/or, the carrier concentration in the P-type doped portion is greater than or equal to 1 ⁇ 1018 cm ⁇ 3 and less than or equal to 1 ⁇ 1021 cm ⁇ 3 .
  • the carrier concentration in the N-type and P-type doped portions is proportional to their conductivity. Therefore, the product of the carrier concentrations in the N-type and P-type doped portions of the junction is within the aforementioned range, and the carrier concentration in at least one of the N-type and P-type doped portions is relatively high. This facilitates changes in the IV characteristics of the junction based on the N-type and P-type doped portions, resulting in an output voltage of the solar cell lower than the turn-on voltage of the junction. In other words, under normal operating conditions, the normal recombination current of the junction is relatively small when the voltage is below the turn-on voltage, ensuring high forward efficiency of the solar cell.
  • the higher carrier concentration in at least one of the N-type and P-type doped portions allows the reverse current to increase significantly with increasing reverse voltage, reducing the transmission resistance of the junction during reverse leakage and further reducing the risk of solar cell breakdown.
  • the beneficial effects of carrier concentrations greater than or equal to 1 ⁇ 1019 cm ⁇ 3 and less than or equal to 1 ⁇ 1021 cm ⁇ 3 in the N-type doped region and greater than or equal to 1 ⁇ 1018 cm ⁇ 3 and less than or equal to 1 ⁇ 1021 cm ⁇ 3 in the P-type doped region can be referred to the previous text, and will not be repeated here.
  • the dopant concentration in the aforementioned N-type doped region is greater than or equal to 6 ⁇ 1020 cm ⁇ 3 and less than or equal to 3.8 ⁇ 1022 cm ⁇ 3 .
  • the relatively high dopant concentration in the N-type doped region is beneficial for increasing the carrier doping concentration within it.
  • the beneficial effects of a higher carrier doping concentration in the N-type doped region can be found in the preceding text and will not be repeated here.
  • the dopant concentration in the aforementioned P-type doped region is greater than or equal to 6 ⁇ 1019 cm ⁇ 3 and less than or equal to 1.3 ⁇ 1023 cm ⁇ 3 .
  • the dopant concentration in the P-type doped region is relatively high, which is beneficial for increasing the carrier doping concentration within the P-type doped region.
  • the beneficial effects of a higher carrier doping concentration in the P-type doped region can be referred to in the previous text, and will not be repeated here.
  • the ratio of the sum of the docking areas of the docking junctions of all conductive semiconductor portions included in the solar cell along the thickness direction of the semiconductor substrate to the area of the back surface of the solar cell is greater than or equal to 1 ⁇ 10 ⁇ 10 : 1 and less than or equal to 5 ⁇ 10 ⁇ 4 : 1.
  • the carrier concentration in the N-type and P-type doped portions is related to the sheet resistance of the conductive semiconductor portion. Specifically, within a certain range, when the carrier concentration in the N-type and/or P-type doped portions is high, the sheet resistance of the conductive semiconductor portion is relatively low.
  • the ratio of the sum of the docking areas along the thickness direction of the semiconductor substrate of all the conductive semiconductor portions included in the solar cell to the area of the back surface of the solar cell is set to be greater than or equal to 1 ⁇ 10 ⁇ 10 : 1 and less than or equal to 5 ⁇ 10 ⁇ 4 : 1
  • the area of the docking junction can be appropriately reduced, thereby reducing the magnitude of the forward recombination current generated by the presence of the docking junction, further improving the high operating efficiency of the solar cell in the forward voltage region, and helping to achieve a balance between the reverse breakdown voltage and the operating efficiency of the solar cell.
  • the ratio of the sum of the docking areas of the docking junctions of all conductive semiconductor portions included in the solar cell along the thickness direction of the semiconductor substrate to the area of the back surface of the solar cell is greater than 5 ⁇ 10 ⁇ 4 : 1 and less than or equal to 1 ⁇ 10 ⁇ 2 : 1.
  • the sheet resistance of the conductive semiconductor part is relatively large.
  • the ratio of the sum of the docking areas of all conductive semiconductor parts included in the solar cell along the thickness direction of the semiconductor substrate to the area of the back surface of the solar cell is set to be greater than 5 ⁇ 10 ⁇ 4 : 1 and less than or equal to 1 ⁇ 10 ⁇ 2 : 1.
  • the reverse breakdown voltage of the solar cell can be reduced to a suitable range, which is conducive to achieving a balance between the reverse breakdown voltage and the operating efficiency of the solar cell.
  • At least one conductive semiconductor portion is located only between the first doped semiconductor portion and the second doped semiconductor portion.
  • at least one of the first doped semiconductor portion and the second doped semiconductor portion is a doped semiconductor layer formed on a semiconductor substrate, and at least one conductive semiconductor portion is located between the first doped semiconductor portion and the second doped semiconductor portion and extends between the doped semiconductor layer and the semiconductor substrate.
  • at least one conductive semiconductor portion is a conductive semiconductor layer formed on a semiconductor substrate, and the conductive semiconductor layer is located between the first doped semiconductor portion and the second doped semiconductor portion and extends above the portion of at least one of the first doped semiconductor portion and the second doped semiconductor portion facing away from the semiconductor substrate.
  • this application provides a photovoltaic module, which includes the solar cells provided in the first aspect and its various implementations described above.
  • Figure 1 is a longitudinal sectional view of the structure of the solar cell provided in an embodiment of this application;
  • Figure 2 is a second longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application;
  • Figure 3 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 4 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 5 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 6 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 7 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 8 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 9 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 10 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 11 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 12 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 13 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 14 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 15 is a longitudinal sectional view of the structure of the solar cell provided in the embodiment of this application.
  • Figure 16 is a top view of a portion of the structure of the solar cell provided in an embodiment of this application.
  • Figure 17 is a top view of a portion of the structure of the solar cell provided in an embodiment of this application.
  • Figure 18 is a top view of a portion of the structure of the solar cell provided in an embodiment of this application.
  • the first doped semiconductor portion 12 and the second doped semiconductor portion 13 in the solar cell provided in this application have opposite conductivity types. Furthermore, each conductive semiconductor portion 14 included in the solar cell is at least partially located between the first doped semiconductor portion 12 and the second doped semiconductor portion 13, and only a portion of the first doped semiconductor portion 12 and only a portion of the second doped semiconductor portion 13 are electrically connected through at least one conductive semiconductor portion 14. Regions between the first doped semiconductor portion 12 and the second doped semiconductor portion 13 where no conductive semiconductor portion 14 is disposed can be separated by physical spacing such as insulating trenches, or by non-conductive structures such as chemical films made of insulating materials or intrinsic semiconductor materials.
  • the semiconductor substrate may be a semiconductor substrate without any structure formed thereon, or it may be a semiconductor substrate with some structure formed thereon.
  • the structure formed on the semiconductor substrate can be set according to actual needs and is not specifically limited here.
  • the semiconductor substrate may include a semiconductor substrate and a surface passivation layer formed on the semiconductor substrate.
  • the material of the semiconductor substrate can include any semiconductor material such as silicon, silicon germanium, germanium, or gallium arsenide.
  • the semiconductor substrate can be a P-type semiconductor substrate, an N-type semiconductor substrate, or an intrinsic semiconductor substrate.
  • the first doped semiconductor portion can be a doped semiconductor region disposed within a corresponding region of the semiconductor substrate, or it can be a doped semiconductor layer disposed on top of the corresponding region of the semiconductor substrate.
  • the material of the first doped semiconductor portion can include any semiconductor material such as silicon, germanium-silicon, germanium, or gallium arsenide.
  • the crystal phase of the first doped semiconductor portion can be amorphous, microcrystalline, nanocrystalline, single crystal, or polycrystalline, etc.
  • the solar cell may further include a first interface passivation layer 18 located between the semiconductor substrate 11 and the first doped semiconductor portion 12.
  • the material and thickness of the first interface passivation layer 18 can be set according to the material of the first doped semiconductor portion 12 and actual needs, and are not specifically limited here.
  • the first interface passivation layer 18 is a tunneling passivation layer.
  • the first interface passivation layer 18 is an intrinsic amorphous silicon layer.
  • this embodiment does not specifically limit the conductivity type of the second doped semiconductor section 13, as long as the conductivity types of the second doped semiconductor section 13 and the first doped semiconductor section 12 are opposite.
  • the conductivity type of the second doped semiconductor section 13 can be N-type, in which case the conductivity type of the first doped semiconductor section 12 is P-type.
  • the conductivity type of the second doped semiconductor section 13 can also be P-type, in which case the conductivity type of the first doped semiconductor section 12 is N-type.
  • the second doped semiconductor portion 13 can be a doped semiconductor region disposed within the corresponding area of the semiconductor substrate 11, or it can be a doped semiconductor layer disposed on the corresponding area of the semiconductor substrate 11.
  • the specific formation location of the second doped semiconductor portion 13 on the semiconductor substrate can be determined according to the type of solar cell.
  • the second doped semiconductor portion 13 and the first doped semiconductor portion 12 are disposed on opposite sides of the semiconductor substrate 11; the second doped semiconductor portion 13 can be disposed on the front side of the semiconductor substrate 11 corresponding to the solar cell, while the first doped semiconductor portion 12 is disposed on the back side of the semiconductor substrate 11 corresponding to the solar cell; alternatively, the second doped semiconductor portion 13 can be disposed on the back side of the semiconductor substrate 11 corresponding to the solar cell, while the first doped semiconductor portion 12 is disposed on the front side of the semiconductor substrate 11.
  • the second doped semiconductor portion 13 can be disposed only in a local area of the corresponding surface of the semiconductor substrate 11, or it can be disposed in the entire area of the corresponding surface of the semiconductor substrate 11.
  • both the second doped semiconductor section 13 and the first doped semiconductor section 12 are disposed on the back side of the semiconductor substrate 11 corresponding to the solar cell.
  • At least one pair of regions in different regions along the length of at least one conductive semiconductor portion 14 may have opposite conductivity types, with each pair of regions being two adjacent regions along the length of the same conductive semiconductor portion 14.
  • the pair of regions with opposite conductivity types in the conductive semiconductor portion 14 forms a mating junction, and the region in the first doped semiconductor portion 12 and the second doped semiconductor portion 13 that contacts the conductive semiconductor portion 14 with the region of the conductive semiconductor portion 14 having the opposite conductivity type will also form a mating junction with the region of the conductive semiconductor portion 14 that contacts the conductive semiconductor portion 14.
  • At least one conductive semiconductor portion 14 may also be formed separately on the semiconductor substrate 11 along with the first doped semiconductor portion 12 and the second doped semiconductor portion 13.
  • the material, type of doped element, carrier doping concentration and doped element concentration of the conductive semiconductor portion 14 can be set according to actual needs, and no specific limitation is made here.
  • this application does not specifically limit the number of conductive semiconductor portions 14 included in the solar cell, as long as the ratio A of the transmission resistance heating power P1 corresponding to all conductive semiconductor portions included in the solar cell to the reverse leakage power P2 corresponding to the solar cell is greater than or equal to 2% and less than or equal to 50%.
  • the ratio A between P1 and P2 can be any value greater than or equal to 2% and less than or equal to 50%.
  • the ratio A between P1 and P2 can be 2%, 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, or 50%, etc.
  • the value of the ratio A between P1 and P2 is also related to the specific structure of the solar cell. Therefore, the value of the ratio A between P1 and P2 can be determined based on the specific structure of the solar cell, as well as actual needs and the actual manufacturing process; no specific limitations are imposed here.
  • the ratio A between P1 and P2 can be greater than or equal to 2% and less than or equal to 30%.
  • the ratio A between the resistance heating power P1 corresponding to all conductive semiconductor parts 14 included in the solar cell and the reverse leakage power P2 corresponding to the solar cell is within the above range. This helps to prevent excessively high requirements on the reverse leakage current transmission capability of the conductive semiconductor parts due to a small ratio A, and helps to reduce the design difficulty of the solar cell.
  • the ratio A is less than 30%, the resistance heating power of all conductive semiconductor parts 14 included in the solar cell is relatively small, which can further reduce the local heat loss of the solar cell when a reverse bias voltage is applied, and further improve the burn-out resistance of the solar cell under reverse leakage conditions.
  • the different regions of the connecting electrode 17 that are continuously distributed along its own length have the same conductivity type and are spaced apart from adjacent structures with the opposite conductivity type, so as to prevent short circuits caused by heterogeneous overlap of the different regions of the connecting electrode 17 that are continuously distributed along its own length, thus ensuring that the solar cell has high electrical reliability.
  • the portions of the connecting electrodes 17 formed on two adjacent regions of the same conductive semiconductor portion 14 with the same conductivity type can be continuously or intermittently arranged.
  • the spacing between the connecting electrodes 17 and adjacent structures with opposite conductivity types can be as follows: as shown in FIG20, different regions of the same conductive semiconductor portion 14 with opposite conductivity types are spaced apart; or, as shown in FIG21, the connecting electrodes 17 and the first doped semiconductor portion 12 or the second doped semiconductor portion 13 with opposite conductivity types are spaced apart.
  • the length of the spacing can be determined according to the actual application scenario, as long as it can prevent short circuits caused by heterogeneous overlap of different regions of the continuously distributed connecting electrodes 17 along their length direction.
  • the end of the connecting electrode 17 can extend to the first doped semiconductor portion 12 or the second doped semiconductor portion 13, which has the same conductivity type as itself; even as shown in FIG22, along the length direction of the conductive semiconductor portion 14, the end of the connecting electrode 17 can be electrically connected to an electrode with the same conductivity type as itself.
  • the connecting electrode can also be provided only in a portion of the conductive semiconductor portion 14 along its own length direction.
  • the ratio A between P1 and P2 can be greater than or equal to 2% and less than or equal to 45%.
  • the ratio A between P1 and P2 can be 2%, 5%, 8%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, or 45%, etc.
  • the upper limit of the ratio A between P1 and P2 can be further reduced, decreasing the maximum heat generation of the conductive semiconductor portion 14 during reverse leakage, and further improving the solar cell's resistance to burn-out under reverse leakage conditions.
  • the ratio A between P1 and P2 can preferably be set within the range of greater than or equal to 10% and less than or equal to 30% (e.g., the ratio A between P1 and P2 can be 10%, 12%, 15%, 18%, 20%, 22%, 25%, 28%, or 30, etc.), so as to achieve high operating efficiency of the solar cell while having a low risk of hot spots.
  • the reverse breakdown voltage corresponding to the solar cell provided in this application embodiment can be greater than or equal to 2V and less than or equal to 9V (e.g., it can be 2V, 3V, 4V, 5V, 6V, 7V, 8V, or 9V, etc.).
  • the reverse breakdown voltage corresponding to the solar cell provided in this application embodiment can be reduced to 5V to 8V by adjusting the ratio A between P1 and P2 to 15% to 25%.
  • this application embodiment also provides a method for calculating the ratio A between P1 and P2, so as to achieve a quantitative characterization of the ratio A between the transmission resistance heating power P1 corresponding to all conductive semiconductor parts 14 included in the solar cell and the reverse leakage power P2 corresponding to the solar cell.
  • the portion of the conductive semiconductor portion 14 located between the first doped semiconductor portion 12 and the second doped semiconductor portion 13 has B regions along its length, where B is a positive integer greater than or equal to 1.
  • the ratio A between P1 and P2 satisfies the formula: Wherein, Im is the maximum power point current of the solar cell, R ⁇ sub>sq1 ⁇ /sub> to R ⁇ sub>sqB ⁇ /sub> are the sheet resistances of corresponding regions of a single conductive semiconductor portion 14, L ⁇ sub>1 ⁇ /sub> to L ⁇ sub> B ⁇ /sub> are the effective current transmission lengths of corresponding regions of a single conductive semiconductor portion 14, V ⁇ sub>r ⁇ /sub> is the reverse breakdown voltage of the solar cell, N is the total number of conductive semiconductor portions 14 included in the solar cell, and a ⁇ sub>1 ⁇ /sub> to a ⁇ sub> B ⁇ /sub> are the average widths of
  • the region has a length along the length direction of the conductive semiconductor portion and a width in a direction perpendicular to the length direction of the conductive semiconductor portion.
  • the sheet resistance, effective current transmission length and average width of the corresponding region of the conductive semiconductor part, as well as the total number of conductive semiconductor parts 14 included in the solar cell will affect the size of the ratio A.
  • the transmission resistance heating power P1 corresponding to all conductive semiconductor parts 14 included in the solar cell can be controlled. This ensures that the solar cell has a high resistance to burnout under reverse leakage conditions, while improving the applicability of the solar cell provided in the embodiments of this application in different application scenarios.
  • the different conductive semiconductor portions 14 described in the various embodiments of this application have the same structure means that the different conductive semiconductor portions 14 have the same number of regions along their own length direction, and the carrier concentration, doping type, length and width of the corresponding regions are the same.
  • the maximum power point current Im and the reverse breakdown voltage Vr of the solar cell can be obtained by performing electrical tests on the solar cell.
  • Rsq1 to RsqB can be determined by measurement and/or calculation.
  • L1 to LB and a1 to aB can be obtained by measurement.
  • the different regions of the conductive semiconductor portion 14 along its length are divided according to the different carrier concentrations and/or doping types of the different regions.
  • the conductive semiconductor portion 14 includes only one region.
  • the conductive semiconductor portion 14 when at least one of the carrier concentrations and doping types of the different regions of the conductive semiconductor portion 14 along its length is different, the conductive semiconductor portion 14 includes multiple regions.
  • L1 to LB are the effective current transmission lengths of the corresponding regions of the conductive semiconductor section 14, that is, the effective transmission lengths of charge carriers in the region when transmitting leakage current.
  • a1 to aB are the average widths of the corresponding regions of the conductive semiconductor section 14, that is, the average widths of the region along the direction parallel to the junction when transmitting leakage current.
  • the ratio A between P1 and P2 satisfies the formula:
  • Im is the maximum power point current of the solar cell
  • Rsq1 to RsqB are the sheet resistances of the corresponding regions of a single conductive semiconductor part
  • L′ 1 to L′ B are the effective current transmission lengths of the portions of the corresponding regions of a single conductive semiconductor part 14 that do not correspond to the connected electrode 17
  • Vr is the reverse breakdown voltage of the solar cell
  • N is the total number of conductive semiconductor parts included in the solar cell
  • a′1 to a′B are the average widths of the portions of the corresponding regions of a single conductive semiconductor part 14 that do not correspond to the connected electrode
  • Re is the equivalent resistance of the transmission resistance of the
  • the transmission resistance heating power P1 corresponding to all conductive semiconductor portions included in the solar cell can be comprehensively and accurately controlled. This ensures that the solar cell has a high resistance to burnout under reverse leakage conditions, while improving the applicability of the solar cell provided in this application embodiment in different application scenarios.
  • the maximum power point current Im and the reverse breakdown voltage Vr of the solar cell can be obtained by electrical testing of the solar cell.
  • Rsq1 to RsqB can be determined by measurement and/or calculation.
  • the resistance Re can be determined by measurement and/or calculation.
  • L′ 1 to L′ B and a′1 to a′B can be obtained by measurement.
  • the solar cell includes the connecting electrode 17
  • the different regions of the conductive semiconductor portion 14 are divided along the length direction of the conductive semiconductor portion 14 based on the different carrier concentrations and/or doping types of the different regions.
  • the conductive semiconductor portion 14 includes only one region.
  • the ratio A can be determined according to the requirements for the heat transfer resistance of all conductive semiconductor portions in the solar cell in the actual application scenario, as well as the requirements for reducing the risk of hot spots in the solar cell; no specific limitations are made here.
  • the normal recombination current of the junction is relatively small when it is below the turn-on voltage, ensuring that the solar cell has high forward operating efficiency.
  • the relatively high carrier concentration in at least one of the N-type and P-type doped portions allows the reverse current of the junction to increase significantly with increasing reverse voltage, reducing the transmission resistance of the junction during reverse leakage and further reducing the risk of solar cell breakdown.
  • the carrier concentration in the N-type doped region of the aforementioned junction can be greater than or equal to 1 ⁇ 1019 cm ⁇ 3 and less than or equal to 1 ⁇ 1021 cm ⁇ 3 .
  • the carrier concentration in the N-type doped region can be 1 ⁇ 1019 cm ⁇ 3 , 3 ⁇ 1019 cm ⁇ 3 , 5 ⁇ 1019 cm ⁇ 3, 8 ⁇ 1019 cm ⁇ 3 , 1 ⁇ 1020 cm ⁇ 3 , 3 ⁇ 1020 cm ⁇ 3 , 5 ⁇ 1020 cm ⁇ 3 , 8 ⁇ 1020 cm ⁇ 3 , or 1 ⁇ 1021 cm ⁇ 3 , etc.
  • beneficial effects in this case can be referenced in the analysis of the beneficial effects of the product of the carrier concentration in the N-type doped region and the carrier concentration in the P-type doped region being greater than or equal to 1 ⁇ 1037 cm ⁇ 6 and less than or equal to 1 ⁇ 1042 cm ⁇ 6 , which will not be repeated here.
  • the carrier concentration in the P-type doped portion of the aforementioned docking junction can be greater than or equal to 1 ⁇ 1018 cm ⁇ 3 and less than or equal to 1 ⁇ 1021 cm ⁇ 3 .
  • the carrier concentration in the P-type doped portion can be 1 ⁇ 1018 cm ⁇ 3 , 5 ⁇ 1018 cm ⁇ 3 , 1 ⁇ 1019 cm ⁇ 3 , 3 ⁇ 1019 cm ⁇ 3 , 5 ⁇ 1019 cm ⁇ 3 , 8 ⁇ 1019 cm ⁇ 3 , 1 ⁇ 1020 cm ⁇ 3, 3 ⁇ 1020 cm ⁇ 3 , 5 ⁇ 1020 cm ⁇ 3 , 8 ⁇ 1020 cm ⁇ 3 , or 1 ⁇ 1021 cm ⁇ 3 , etc.
  • beneficial effects in this case can be referenced in the analysis of the beneficial effects of the product of the carrier concentrations in the N-type doped region and the P-type doped region being greater than or equal to 1 ⁇ 10 37 cm ⁇ 6 and less than or equal to 1 ⁇ 10 42 cm ⁇ 6 , as described above, and will not be repeated here.
  • the dopant concentration in the aforementioned N-type doped region can be greater than or equal to 6 ⁇ 1020 cm ⁇ 3 and less than or equal to 3.8 ⁇ 1022 cm ⁇ 3 .
  • the dopant concentration in the N-type doped region can be 6 ⁇ 1020 cm ⁇ 3 , 8 ⁇ 1020 cm ⁇ 3 , 1 ⁇ 1021 cm ⁇ 3 , 3 ⁇ 1021 cm ⁇ 3 , 5 ⁇ 1021 cm ⁇ 3, 8 ⁇ 1021 cm ⁇ 3 , 1 ⁇ 1022 cm ⁇ 3 , 3 ⁇ 1022 cm ⁇ 3 , or 3.8 ⁇ 1022 cm ⁇ 3 , etc.
  • the dopant concentration in the N-type doped region is relatively high, which is beneficial for increasing the carrier doping concentration in the N-type doped region.
  • the beneficial effects of a higher carrier doping concentration in the N-type doped region can be referred to the previous text, and will not be repeated here.
  • the dopant concentration in the P-type doped region can be greater than or equal to 6 ⁇ 1019 cm ⁇ 3 and less than or equal to 1.3 ⁇ 1023 cm ⁇ 3 .
  • the dopant concentration in the P-type doped region can be 6 ⁇ 1019 cm ⁇ 3 , 1 ⁇ 1020 cm ⁇ 3 , 6 ⁇ 1020 cm ⁇ 3 , 8 ⁇ 1020 cm ⁇ 3 , 1 ⁇ 1021 cm ⁇ 3 , 3 ⁇ 1021 cm ⁇ 3 , 5 ⁇ 1021 cm ⁇ 3, 8 ⁇ 1021 cm ⁇ 3 , 1 ⁇ 1022 cm ⁇ 3 , 3 ⁇ 1022 cm ⁇ 3 , 5 ⁇ 1022 cm ⁇ 3 , or 1.3 ⁇ 1023 cm ⁇ 3 , etc.
  • the dopant concentration in the P-type doped region is relatively high, which is beneficial for increasing the carrier doping concentration in the P-type doped region.
  • the beneficial effects of a higher carrier doping concentration in the P-type doped region can be found in the previous text, and will not be repeated here.
  • the size of the conductive semiconductor section 14 since the size of the conductive semiconductor section 14 is related to the docking area of the docking junction along the thickness direction of the semiconductor substrate 11, and the size of the docking area of the docking junction along the thickness direction of the semiconductor substrate 11 directly affects the heat transfer resistance of the conductive semiconductor section 14, the heat transfer resistance of the conductive semiconductor section can be precisely controlled by comprehensively adjusting the carrier concentration in the N-type doped section, the carrier concentration in the P-type doped section, and the docking area of the docking junction along the thickness direction of the semiconductor substrate, so as to meet the requirements for heat spot prevention of solar cells in practical application scenarios.
  • the ratio of the sum of the docking areas of the docking junctions of all conductive semiconductor portions 14 included in the solar cell along the thickness direction of the semiconductor substrate 11 to the area of the back surface of the solar cell can be greater than or equal to 1 ⁇ 10 ⁇ 10 : 1 and less than or equal to 5 ⁇ 10 ⁇ 4 : 1.
  • the ratio of the sum of the docking areas of the docking junctions of all conductive semiconductor portions 14 included in the solar cell along the thickness direction of the semiconductor substrate 11 to the area of the backlight surface of the solar cell can be 1 ⁇ 10 ⁇ 10 :1, 5 ⁇ 10 ⁇ 10 :1, 1 ⁇ 10 ⁇ 9 :1, 5 ...
  • the ratio of the sum of the docking areas of all conductive semiconductor portions 14 included in the solar cell along the thickness direction of the semiconductor substrate 11 to the area of the back surface of the solar cell is set to be greater than or equal to 1 ⁇ 10 ⁇ 10 : 1 and less than or equal to 5 ⁇ 10 ⁇ 4 : 1
  • the area of the docking junction can be appropriately reduced, thereby reducing the magnitude of the forward recombination current generated by the presence of the docking junction, further improving the high operating efficiency of the solar cell in the forward voltage region, and helping to achieve a balance between the reverse breakdown voltage and the operating efficiency of the solar cell.
  • the ratio of the sum of the docking areas of the docking junctions of all conductive semiconductor portions 14 included in the solar cell along the thickness direction of the semiconductor substrate 11 to the area of the back surface of the solar cell can be greater than 5 ⁇ 10 ⁇ 4 : 1 and less than or equal to 1 ⁇ 10 ⁇ 2 : 1.
  • the ratio of the sum of the docking areas of all conductive semiconductor portions 14 of the solar cell along the thickness direction of the semiconductor substrate 11 to the area of the backlight surface of the solar cell can be 6 ⁇ 10 ⁇ 4 :1, 8 ⁇ 10 ⁇ 4 :1, 1 ⁇ 10 ⁇ 3 :1, 3 ⁇ 10 ⁇ 3 :1, 5 ⁇ 10 ⁇ 3 :1, or 8 ⁇ 10 ⁇ 3.
  • the sheet resistance of the conductive semiconductor part is relatively large.
  • the ratio of the sum of the docking areas of all the conductive semiconductor parts 14 included in the solar cell along the thickness direction of the semiconductor substrate 11 to the area of the back surface of the solar cell is set to be greater than 5 ⁇ 10 ⁇ 4 :1 and less than or equal to 1 ⁇ 10 ⁇ 2 :1.
  • the reverse breakdown voltage of the solar cell can be reduced to a suitable range, which is conducive to achieving a balance between the reverse breakdown voltage and the operating efficiency of the solar cell.
  • the solar cell may further include a first electrode 15 and a second electrode 16.
  • the first electrode 15 is disposed on the side of the first doped semiconductor portion 12 facing away from the semiconductor substrate 11 and is in ohmic contact with the first doped semiconductor portion 12.
  • the second electrode 16 is disposed on the side of the second doped semiconductor portion 13 facing away from the semiconductor substrate 11 and is in ohmic contact with the second doped semiconductor portion 13.
  • the first electrode 15 and the second electrode 16 are physically insulated. Based on this, charge carriers of corresponding conductivity types are extracted through the first electrode 15 and the second electrode 16, facilitating the formation of photocurrent.
  • the aforementioned physical insulation means no contact, i.e., the first electrode 15 and the second electrode 16 do not contact each other. This application does not specifically limit the materials of the first electrode 15 and the second electrode 16.
  • embodiments of this application provide a photovoltaic module, which includes the solar cells provided in the first aspect and its various implementations described above.

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Abstract

本申请公开了一种太阳能电池和光伏组件，涉及光伏技术领域，以合理设置太阳能电池包括的所有导电半导体部对应的传输电阻发热功率(P1)和太阳能电池对应的反向漏电功率(P2)之间的比值关系，有效降低太阳能电池的反向击穿电压和热斑风险。所述太阳能电池中每个导电半导体部至少部分位于第一掺杂半导体部和第二掺杂半导体部之间，第一掺杂半导体部的仅部分区域和第二掺杂半导体部的仅部分区域通过上述至少一个导电半导体部电性连接。导电半导体部沿自身长度方向的不同区域的导电类型与第一掺杂半导体部和第二掺杂半导体部中的一者的导电类型相反。P1和P2的比值A大于等于2％、且小于等于50％。

Description

一种太阳能电池和光伏组件
相关申请的交叉引用
本申请要求2024年6月19日提交的、发明名称为“一种太阳能电池和光伏组件”的中国专利申请No.202410794820.6的优先权，并且该中国专利申请的全部内容通过引用并入本文中。
技术领域
本申请涉及光伏技术领域，尤其涉及一种太阳能电池和光伏组件。
背景技术
太阳能电池是一种能够将太阳的光能转化为电能的装置。具体的，在太阳能电池处于工作状态下，太阳光照在太阳能电池的半导体p-n结上，形成新的空穴-电子对，在p-n结内建电场的作用下，光生空穴流向p区，光生电子流向n区，接通电路后就能够产生电流。
由太阳能电池端来看，太阳能电池包括的导电类型相反的两个掺杂半导体部需要间隔开，以抑制正向漏电，使太阳能电池在正向电压区域具有较高的光电转换效率。而由光伏组件端来看，当光伏组件中的太阳能电池包括的导电类型相反的两个掺杂半导体部间隔开时，二者之间的电阻较大，其对应的反向击穿电压较大，导致太阳能电池的热斑风险较高。在上述情况下，现有太阳能电池中，通过将导电类型相反的两个掺杂半导体部局部电性连接的方式，在一定程度上降低太阳能电池的热斑风险。
但是，现有的太阳能电池的热斑风险降低程度不佳。
发明内容
本申请的目的在于提供一种太阳能电池和光伏组件，以通过导电半导体部使得导电类型相反的第一掺杂半导体部的仅部分区域和第二掺杂半导体部仅部分区域电性连接，并合理设置太阳能电池包括的所有导电半导体部对应的传输电阻发热功率和太阳能电池对应的反向漏电功率之间的比值关系，一方面有效控制太阳能电池的漏电损耗，另一方面有效降低太阳能电池的反向击穿电压和热斑风险，使得太阳能电池在反向漏电情况下具有较高的抗烧毁能力。
为了实现上述目的，第一方面，本申请提供了一种太阳能电池，该太阳能电池包括：半导体基底、第一掺杂半导体部、第二掺杂半导体部以及至少一个导电半导体部。第一掺杂半导体部设置于半导体基底之内或之上。第二掺杂半导体部设置于半导体基底之内或之上。第二掺杂半导体部和第一掺杂半导体部的导电类型相反。每个导电半导体部至少部分位于第一掺杂半导体部和第二掺杂半导体部之间，且与第一掺杂半导体部的仅部分区域和第二掺杂半导体部的仅部分区域通过上述至少一个导电半导体部电性连接。其中，太阳能电池包括的所有导电半导体部对应的传输电阻发热功率为P1，太阳能电池对应的反向漏电功率为P2，且P1和P2之间的比值A大于等于2％、且小于等于50％。
采用上述技术方案的情况下，本申请提供的太阳能电池中第一掺杂半导体部和第二掺杂半导体部的导电类型相反。并且，太阳能电池包括的每个导电半导体部至少部分位于第一掺杂半导体部和第二掺杂半导体部之间，且第一掺杂半导体部的仅部分区域和第二掺杂半导体部的仅部分区域通过至少一个导电半导体部电性连接。基于此，第一掺杂半导体部和第二掺杂半导体部之间未设置上述至少一个导电半导体部的区域可以通过绝缘沟槽等物理间隔，或者通过绝缘材料或本征半导体材料制造的化学膜层等非导电结构隔离开，防止因第一掺杂半导体部和第二掺杂半导体部的各区域之间全部设置有导电半导体部使得太阳能电池处于正常工作情况下的漏电流较大而导致太阳能电池的工作效率较低。
其次，可以理解的是，第一掺杂半导体部和第二掺杂半导体部之间未设置上述导电半导体部的区域对应的电阻相对较大。而导电半导体部具有相对良好的导电性，可以通过制造局部漏电点的方式将第一掺杂半导体部和第二掺杂半导体部电性连通形成具有相对较低反向击穿电压的内置二极管，故第一掺杂半导体部和第二掺杂半导体部之间设置有导电半导体部的区域对应的电阻相对较小，因此在太阳能电池发生遮挡的情况下，反向漏电流会由第一掺杂半导体部和第二掺杂半导体部中的一者经导电半导体部所在的区域流向另一者。在上述情况下，当本申请中太阳能电池包括的所有导电半导体部对应的传输电阻发热功率P1与太阳能电池对应的反向漏电功率P2之间的比值A大于等于2％、且小于等于50％时，导电半导体部自身在反向漏电过程中所产生的热量相对较低，防止因导电半导体部在反向漏电过程中自身产热严重而导致太阳能电池在施加反向偏压时的局部区域热量降低幅度较小，有效降低太阳能电池的反向击穿电压和热斑风险，使得太阳能电池在反向漏电情况下具有较高的抗烧毁能力。
作为一种可能的实现方案，P1和P2之间的比值A大于等于2％、且小于等于30％。
采用上述技术方案的情况下，太阳能电池包括的所有导电半导体部对应的传输电阻发热功率P1与太阳能电池对应的反向漏电功率P2之间的比值A在上述范围内，利于防止因比值A的数值较小而导致对导电半导体部的反向漏电流的传输能力要求过高，利于降低太阳能电池的设计难度。另外，当比值A小于30％时，太阳能电池包括的所有导电半导体部的传输电阻发热功率相对较小，可以进一步降低太阳能电池在施加反向偏压时的局部区域热量减小幅度，进一步提升太阳能电池在反向漏电情况下具有的抗烧毁能力。
作为一种可能的实现方案，上述导电半导体部位于第一掺杂半导体部和第二掺杂半导体部之间的部分沿自身长度方向具有B个区域，导电半导体部沿自身长度方向的不同区域的导电类型与第一掺杂半导体部和第二掺杂半导体部中的一者的导电类型相反；B为大于等于1的正整数。并且，在太阳能电池包括的不同导电半导体部的结构相同的情况下，P1和P2之间的比值A满足公式：其中，Im为太阳能电池的最大功率点电流，Rsq1至RsqB分别为单个导电半导体部具有的相应各区域的方阻，L1至LB分别为单个导电半导体部具有的相应各区域的有效电流传输长度，Vr为太阳能电池的反向击穿电压，N为太阳能电池包括的导电半导体部的总数量，a1至aB分别为单个导电半导体部具有的相应各区域的平均宽度。
采用上述技术方案的情况下，实现了太阳能电池包括的所有导电半导体部对应的传输电阻发热功率P1与太阳能电池对应的反向漏电功率P2之间的比值A的定量化表征。由上述比值A的公式中可以看出，在太阳能电池的最大功率点电流和反向击穿电压确定的情况下，导电半导体部具有的相应区域的方阻、有效电流传输长度和平均宽度，以及太阳能电池包括的导电半导体部的总数量均会影响比值A的大小，可以通过对上述参数进行调整，从而对太阳能电池包括的所有导电半导体部对应的传输电阻发热功率P1进行调控，在确保太阳能电池在反向漏电情况下具有较高的抗烧毁能力的同时，提高本申请提供的太阳能电池在不同应用场景下的适用性。
作为一种可能的实现方案，上述太阳能电池还包括连接电极。连接电极沿自身长度方向连续分布的不同区域的导电类型相同、且与和自身导电类型相反的相邻结构相互间隔。
采用上述技术方案的情况下，与导电半导体部相比，连接电极具有较低的传输电阻。基于此，在太阳能电池发生遮挡的情况下，流向导电半导体部的反向漏电流会优先流经连接电极，而不是导电半导体部被连接电极覆盖的部分，此时可以进一步降低P1和P2之间的比值A的大小，即降低导电半导体部在反向漏电过程中自身的产热，进一步提升太阳能电池在反向漏电情况下具有的抗烧毁能力。另外，连接电极沿自身长度方向连续分布的不同区域的导电类型相同、且与和自身导电类型相反的相邻结构相互间隔，防止因连接电极沿自身长度方向连续分布的不同区域出现异性搭接而导致短路，确保太阳能电池具有较高的电学可靠性。
作为一种可能的实现方案，在太阳能电池还包括上述连接电极的情况下，P1和P2之间的比值A大于等于2％、且小于等于45％。在此情况下，可以进一步降低P1和P2之间的比值A的上限，降低导电半导体部在反向漏电过程中自身的最大产热，进一步提升太阳能电池在反向漏电情况下具有的抗烧毁能力。
作为一种可能的实现方案，上述导电半导体部位于第一掺杂半导体部和第二掺杂半导体部之间的部分沿自身长度方向具有B个区域，导电半导体部沿自身长度方向的不同区域的导电类型与第一掺杂半导体部和第二掺杂半导体部中的一者的导电类型相反；B为大于等于1的正整数。并且，在太阳能电池包括的不同导电半导体部的结构相同的情况下，P1和P2之间的比值A满足公式：其中，Im为太阳能电池的最大功率点电流，Rsq1至RsqB分别为单个导电半导体部具有的相应各区域的方阻，L′1至L′B分别为单个导电半导体部具有的相应各区域中未对应连接电极的部分的有效电流传输长度，Vr为太阳能电池的反向击穿电压，N为太阳能电池包括的导电半导体部的总数量，a′1至a′B分别为单个导电半导体部具有的相应各区域中未对应连接电极的部分的平均宽度，Re为连接电极的传输电阻、连接电极分别对应的接触电阻、以及与连接电极所接触的结构的传输电阻三者的等效电阻。
采用上述技术方案的情况下，实现了在太阳能电池包括上述连接电极的情况下，太阳能电池包括的所有导电半导体部对应的传输电阻发热功率P1与太阳能电池对应的反向漏电功率P2之间的比值A的定量化表征。由上述比值A的公式中可以看出，在太阳能电池的最大功率点电流和反向击穿电压确定的情况下，不仅导电半导体部具有的相应区域的方阻、有效电流传输长度和平均宽度，以及太阳能电池包括的导电半导体部的总数量均会影响比值A的大小，上述电阻Re也会对比值A的大小造成影响，可以通过对上述参数进行调整，从而对太阳能电池包括的所有导电半导体部对应的传输电阻发热功率P1进行综合且精准的调控，在确保太阳能电池在反向漏电情况下具有较高的抗烧毁能力的同时，提高本申请提供的太阳能电池在不同应用场景下的适用性。
作为一种可能的实现方案，至少一个导电半导体部自身具有对接结，或，第一掺杂半导体部和第二掺杂半导体部中的一者与至少一个导电半导体部之间形成对接结。该对接结包括N型掺杂部、以及与N型掺杂部电性接触的P型掺杂部。其中，N型掺杂部内的载流子浓度和P型掺杂部内的载流子浓度的乘积大于等于1×1037cm-6、且小于等于1×1042cm-6；和/或，N型掺杂部内的载流子浓度大于等于1×1019cm-3、且小于等于1×1021cm-3；和/或，P型掺杂部内的载流子浓度大于等于1×1018cm-3、且小于等于1×1021cm-3。
采用上述技术方案的情况下，N型掺杂部和P型掺杂部内的载流子浓度与自身的导电能力成正比。基于此，对接结中的N型掺杂部和P型掺杂部内的载流子浓度的乘积在上述范围内，N型掺杂部和P型掺杂部中的至少一者内的载流子浓度较高，利于使得基于N型掺杂部和P型掺杂部构成的对接结的I-V特性发生变化，利于使得太阳能电池的输出电压低于对接结的开启电压。换句话说，在太阳能电池处于正常工作情况下，上述对接结在低于开启电压时自身对应的正常复合电流较小，确保太阳能电池具有较高的正向工作效率。同时，N型掺杂部和P型掺杂部中的至少一者内的载流子浓度较高，利于使得对接结在施加反向电压的情况下，反向电流随反向电压的增大而大幅增加，降低对接结在反向漏电时的传输电阻，进一步降低太阳能电池的击穿风险。其次，N型掺杂部内的载流子浓度大于等于1×1019cm-3、且小于等于1×1021cm-3，以及P型掺杂部内的载流子浓度大于等于1×1018cm-3、且小于等于1×1021cm-3的有益效果可以参考前文，此处不再赘述。
作为一种可能的实现方案，上述N型掺杂部内的掺杂元素浓度大于等于6×1020cm-3、且小于等于3.8×1022cm-3。在此情况下，N型掺杂部内的掺杂元素浓度相对较高，利于提高N型掺杂部内的载流子掺杂浓度。而N型掺杂部内的载流子掺杂浓度较高的有益效果可以参考前文，此处不再赘述。
作为一种可能的实现方案，上述P型掺杂部内的掺杂元素浓度大于等于6×1019cm-3、且小于等于1.3×1023cm-3。在此情况下，P型掺杂部内的掺杂元素浓度相对较高，利于提高P型掺杂部内的载流子掺杂浓度。而P型掺杂部内的载流子掺杂浓度较高的有益效果可以参考前文，此处不再赘述。
作为一种可能的实现方案，在第一掺杂半导体部和第二掺杂半导体部位于半导体基底的同一面的情况下，当N型掺杂部内的载流子浓度大于等于3×1020cm-3、且P型掺杂部内的载流子浓度大于等于2×1019cm-3时，太阳能电池包括的所有导电半导体部具有的对接结沿半导体基底的厚度方向的对接面积之和与太阳能电池的背光面的面积的比值大于等于1×10-10:1、且小于等于5×10-4:1。
采用上述技术方案的情况下，可以理解的是，N型掺杂部和P型掺杂部内的载流子浓度与导电半导体部的方阻大小相关。具体的，在一定范围内，N型掺杂部和/或P型掺杂部内的载流子浓度较高时，导电半导体部的方阻相对较小，因此将太阳能电池包括的所有导电半导体部具有的对接结沿半导体基底的厚度方向的对接面积之和与太阳能电池的背光面的面积的比值设置为大于等于1×10-10:1、且小于等于5×10-4:1时，在确保将太阳能电池的反向击穿电压降低到合适范围后，可以适当降低对接结的面积，从而降低因对接结的存在而产生的正向复合电流的大小，进一步提高太阳能电池在正向电压区域具有较高的工作效率，利于使得太阳能电池对应的反向击穿电压和工作效率达到平衡。
作为一种可能的实现方案，在第一掺杂半导体部和第二掺杂半导体部位于半导体基底的同一面的情况下，当N型掺杂部内的载流子浓度小于3×1020cm-3和/或P型掺杂部内的载流子浓度小于2×1019cm-3时，太阳能电池包括的所有导电半导体部具有的对接结沿半导体基底的厚度方向的对接面积之和与太阳能电池的背光面的面积的比值大于5×10-4:1、且小于等于1×10-2:1。
采用上述技术方案的情况下，当N型掺杂部内的载流子浓度小于3×1020cm-3和/或P型掺杂部内的载流子浓度小于2×1019cm-3时，导电半导体部的方阻相对较大，将太阳能电池包括的所有导电半导体部具有的对接结沿半导体基底的厚度方向的对接面积之和与太阳能电池的背光面的面积的比值设置为大于5×10-4:1、且小于等于1×10-2:1，在确保能够降低因对接结的存在而产生的正向复合电流的大小的前体下，通过适当增加对接结的面积，以确保将太阳能电池的反向击穿电压降低到合适范围，利于使得太阳能电池对应的反向击穿电压和工作效率达到平衡。
作为一种可能的实现方案，至少一个导电半导体部仅位于第一掺杂半导体部和第二掺杂半导体部之间。或者，第一掺杂半导体部和第二掺杂半导体部中的至少一者为形成在半导体基底上的掺杂半导体层，且至少一个导电半导体部位于第一掺杂半导体部和第二掺杂半导体部之间、并延伸至掺杂半导体层和半导体基底之间。或者，至少一个导电半导体部为形成在半导体基底上的导电半导体层，且导电半导体层位于第一掺杂半导体部和第二掺杂半导体部之间、并延伸至第一掺杂半导体部和第二掺杂半导体部中的至少一者背离半导体基底一侧的部分上方。
采用上述技术方案的情况下，导电半导体部的设置方式具有多种可选方案，便于根据不同应用场景要求和实际制造精度确定合适方案，提高本申请提供的太阳能电池在不同应用场景下的适用性。
第二方面，本申请提供了一种光伏组件，该光伏组件包括上述第一方面及其各种实现方式提供的太阳能电池。
本申请中第二方面及其各种实现方式的有益效果，可以参考第一方面及其各种实现方式中的有益效果分析，此处不再赘述。
附图说明
此处所说明的附图用来提供对本申请的进一步理解，构成本申请的一部分，本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。在附图中：
图1为本申请实施例提供的太阳能电池的结构纵向剖视示意图一；
图2为本申请实施例提供的太阳能电池的结构纵向剖视示意图二；
图3为本申请实施例提供的太阳能电池的结构纵向剖视示意图三；
图4为本申请实施例提供的太阳能电池的结构纵向剖视示意图四；
图5为本申请实施例提供的太阳能电池的结构纵向剖视示意图五；
图6为本申请实施例提供的太阳能电池的结构纵向剖视示意图六；
图7为本申请实施例提供的太阳能电池的结构纵向剖视示意图七；
图8为本申请实施例提供的太阳能电池的结构纵向剖视示意图八；
图9为本申请实施例提供的太阳能电池的结构纵向剖视示意图十；
图10为本申请实施例提供的太阳能电池的结构纵向剖视示意图十一；
图11为本申请实施例提供的太阳能电池的结构纵向剖视示意图十二；
图12为本申请实施例提供的太阳能电池的结构纵向剖视示意图十三；
图13为本申请实施例提供的太阳能电池的结构纵向剖视示意图十四；
图14为本申请实施例提供的太阳能电池的结构纵向剖视示意图十五；
图15为本申请实施例提供的太阳能电池的结构纵向剖视示意图十六；
图16为本申请实施例提供的太阳能电池的部分结构的俯视示意图一；
图17为本申请实施例提供的太阳能电池的部分结构的俯视示意图二；
图18为本申请实施例提供的太阳能电池的部分结构的俯视示意图三；
图19为本申请实施例提供的太阳能电池的部分结构的俯视示意图四；
图20为本申请实施例提供的太阳能电池的部分结构的俯视示意图五；
图21为本申请实施例提供的太阳能电池的部分结构的俯视示意图六；
图22为本申请实施例提供的太阳能电池的部分结构的俯视示意图七；
图23为本申请实施例提供的太阳能电池的部分结构的俯视示意图八；
图24为本申请实施例提供的太阳能电池的部分结构的俯视示意图九；
图25为典型二极管的整流特性I-V曲线图；
图26为对接结中P型掺杂部和N型掺杂部重掺且未同时简并情况下的I-V曲线图；
图27为对接结中P型掺杂部和N型掺杂部重掺且同时简并情况下的I-V曲线图。
附图标记：11为半导体基底，12为第一掺杂半导体部，13为第二掺杂半导体部，14为导电半导体部，15为第一电极，16为第二电极，17为连接电极，18为第一界面钝化层，19为第二界面钝化层。
具体实施方式
以下，将参照附图来描述本申请的实施例。但是应该理解，这些描述只是示例性的，而并非要限制本申请的范围。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本申请的概念。
在附图中示出了根据本申请实施例的各种结构示意图。这些图并非是按比例绘制的，其中为了清楚表达的目的，放大了某些细节，并且可能省略了某些细节。图中所示出的各种区域、层的形状以及它们之间的相对大小、位置关系仅是示例性的，实际中可能由于制造公差或技术限制而有所偏差，并且本领域技术人员根据实际所需可以另外设计具有不同形状、大小、相对位置的区域/层。
在本申请的上下文中，当将一层/元件称作位于另一层/元件“上”时，该层/元件可以直接位于该另一层/元件上，或者它们之间可以存在居中层/元件。另外，如果在一种朝向中一层/元件位于另一层/元件“上”，那么当调转朝向时，该层/元件可以位于该另一层/元件“下”。为了使本申请所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。“若干”的含义是一个或一个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
太阳能电池是一种能够将太阳的光能转化为电能的装置。具体的，在太阳能电池处于工作状态下，太阳光照在太阳能电池的半导体p-n结上，形成新的空穴-电子对，在p-n结内建电场的作用下，光生空穴流向p区，光生电子流向n区，接通电路后就能够产生电流。
由太阳能电池端来看，太阳能电池包括的导电类型相反的两个掺杂半导体部需要间隔开，以抑制正向漏电，使太阳能电池在正向电压区域具有较高的光电转换效率。而由光伏组件端来看，当光伏组件中的太阳能电池包括的导电类型相反的两个掺杂半导体部间隔开时，二者之间的电阻较大，其对应的反向击穿电压较大，导致太阳能电池的热斑风险较高。在上述情况下，现有太阳能电池中，通过将导电类型相反的两个掺杂半导体部局部电性连接的方式，在对太阳能电池在正向电压区域的工作效率影响较小的情况下，在一定程度上降低太阳能电池的热斑风险。
但是，现有的太阳能电池中用于将导电类型相反的两个掺杂半导体部局部电性连接的导电半导体部对应的传输电阻发热功率与太阳能电池对应的反向漏电功率之间的比例关系设置不合理，导致太阳能电池的热斑风险降低程度不佳。
为了解决上述技术问题，第一方面，本申请实施例提供了一种太阳能电池。如图1和图2所示，本申请实施例提供的太阳能电池包括：半导体基底11、第一掺杂半导体部12、第二掺杂半导体部13以及至少一个导电半导体部14。第一掺杂半导体部12设置于半导体基底11之内或之上。第二掺杂半导体部13设置于半导体基底11之内或之上。第二掺杂半导体部13和第一掺杂半导体部12的导电类型相反。每个导电半导体部14至少部分位于第一掺杂半导体部12和第二掺杂半导体部13之间，且第一掺杂半导体部12的仅部分区域和第二掺杂半导体部13的仅部分区域通过上述至少一个导电半导体部14电性连接。其中，太阳能电池包括的所有导电半导体部14对应的传输电阻发热功率为P1，太阳能电池对应的反向漏电功率为P2，且P1和P2之间的比值A大于等于2％、且小于等于50％。
如图1和图2所示，本申请实施例提供的太阳能电池中第一掺杂半导体部12和第二掺杂半导体部13的导电类型相反。并且，太阳能电池包括的每个导电半导体部14至少部分位于第一掺杂半导体部12和第二掺杂半导体部13之间，且第一掺杂半导体部12的仅部分区域和第二掺杂半导体部13的仅部分区域通过至少一个导电半导体部14电性连接。第一掺杂半导体部12和第二掺杂半导体部13之间未设置导电半导体部14的区域可以通过绝缘沟槽等物理间隔，或者通过绝缘材料或本征半导体材料制造的化学膜层等非导电结构隔离开，防止因第一掺杂半导体部12和第二掺杂半导体部13的各区域之间全部设置有导电半导体部14使得太阳能电池处于正常工作情况下的漏电流较大而导致太阳能电池的工作效率较低。其次，可以理解的是，第一掺杂半导体部12和第二掺杂半导体部13之间未设置导电半导体部14的区域对应的电阻相对较大。而因导电半导体部14具有相对良好的导电性，可以通过制造局部漏电点的方式将第一掺杂半导体部12和第二掺杂半导体部13电性连通形成具有相对较低反向击穿电压的内置二极管，故第一掺杂半导体部12和第二掺杂半导体部13之间设置有导电半导体部14的区域对应的电阻相对较小，因此在太阳能电池发生遮挡的情况下，反向漏电流会由第一掺杂半导体部12和第二掺杂半导体部13中的一者经导电半导体部14所在的区域流向另一者。当本申请实施例中太阳能电池包括的所有导电半导体部14对应的传输电阻发热功率P1与太阳能电池对应的反向漏电功率P2之间的比值A大于等于2％、且小于等于50％时，导电半导体部14自身在反向漏电过程中所产生的热量相对较低，防止因导电半导体部14在反向漏电过程中自身产热严重而导致太阳能电池在施加反向偏压时的局部区域热量降低幅度较小，有效降低太阳能电池的反向击穿电压和热斑风险，使得太阳能电池在反向漏电情况下具有较高的抗烧毁能力。
在实际应用过程中，本申请实施例对提供的太阳能电池的种类不做具体限定。具体的，本申请实施例提供的太阳能电池可以为双面接触电池，即太阳能电池的正电极和负电极分别设置在太阳能电池的相对两面。或者，本申请实施例提供的太阳能电池还可以为背接触电池，即太阳能电池的正电极和负电极间隔设置在太阳能电池的同一面。
对于半导体基底来说，本申请实施例对半导体基底的结构、材料和导电类型不做具体限定。半导体基底可以为其上未形成有任何结构的半导体衬底，或者半导体基底也可以为其上形成有一些结构的半导体衬底。其中，当半导体基底为其上形成有一些结构的半导体衬底时，半导体衬底上形成的结构可以根据实际需求设置，此处不做具体限定。例如：半导体基底可以包括半导体衬底、以及形成半导体衬底上的表面钝化层。
至于半导体基底的材料，半导体基底的材料可以包括硅、锗硅、锗或砷化镓等任一种半导体材料。其次，半导体基底可以为P型半导体基底，也可以为N型半导体基底，还可以为本征半导体基底。
对于第一掺杂半导体部来说，从形成位置方面来讲，第一掺杂半导体部在半导体基底的形成位置可以根据太阳能电池的种类确定。其中，在太阳能电池为双面接触电池的情况下，第一掺杂半导体部可以设置在半导体基底对应太阳能电池的正面一侧，也可以设置在太阳能电池的背面一侧；其次，如图2和图3所示，当太阳能电池为双面接触电池时，第一掺杂半导体部12可以仅设置在半导体基底11的相应表面的局部区域，也可以设置在半导体基底11的相应表面的全部区域。如图1所示，而在太阳能电池为背接触电池的情况下，第一掺杂半导体部12设置在半导体基底11对应太阳能电池的背面一侧的局部区域。
具体的，第一掺杂半导体部可以是设置于半导体基底相应区域之内的掺杂半导体区，也可以是设置于半导体基底相应区域之上的掺杂半导体层。其中，当第一掺杂半导体部为设置于半导体基底相应区域之上的掺杂半导体层时，第一掺杂半导体部的材料可以包括硅、锗硅、锗或砷化镓等任一种半导体材料。从物质的排列形式方面来讲，第一掺杂半导体部的晶相可以为非晶、微晶、纳米晶、单晶或多晶等。
其次，如图1至图3所示，当第一掺杂半导体部12为设置于半导体基底11相应区域之上的掺杂半导体层时，第一掺杂半导体部12可以直接形成在半导体基底11的相应区域上。或者，如图4所示，太阳能电池还可以包括位于半导体基底11和第一掺杂半导体部12之间的第一界面钝化层18。该第一界面钝化层18的材料和厚度可以根据第一掺杂半导体部12的材料、以及实际需求设置，此处不做具体限定。例如：当第一掺杂半导体部为掺杂多晶硅层时，第一界面钝化层18为隧穿钝化层。又例如：当第一掺杂半导体部12为掺杂非晶硅层时，第一界面钝化层18为本征非晶硅层。
另外，本申请实施例对第一掺杂半导体部12内的载流子浓度和掺杂元素浓度不做具体限定，只要能够应用至本申请实施例提供的太阳能电池中均可。
对于第二掺杂半导体部13来说，从导电类型方面来讲，本申请实施例对第二掺杂半导体部13的导电类型不做具体限定，满足第二掺杂半导体部13和第一掺杂半导体部12的导电类型相反均可。具体的，第二掺杂半导体部13的导电类型可以为N型，此时第一掺杂半导体部12的导电类型为P型。或者，第二掺杂半导体部13的导电类型也可以为P型，此时第一掺杂半导体部12的导电类型为N型。
从形成位置方面来讲，第二掺杂半导体部13可以是设置于半导体基底11相应区域之内的掺杂半导体区，也可以是设置于半导体基底11相应区域之上的掺杂半导体层。至于第二掺杂半导体部13在半导体基底的具体形成位置可以根据太阳能电池的种类确定。其中，在太阳能电池为双面接触电池的情况下，如图2和图3所示，第二掺杂半导体部13和第一掺杂半导体部12设置在半导体基底11具有的相对两面；其中，可以是第二掺杂半导体部13设置在半导体基底11对应太阳能电池的正面一侧，此时第一掺杂半导体部12设置在半导体基底11对应太阳能电池的背面一侧；或者，也可以是第二掺杂半导体部13设置在半导体基底11对应太阳能电池的背面一侧，此时第一掺杂半导体部12设置在半导体基底11的正面一侧；其次，如图2、图3和图5所示，当太阳能电池为双面接触电池时，第二掺杂半导体部13可以仅设置在半导体基底11的相应表面的局部区域，也可以设置在半导体基底11的相应表面的全部区域。而在太阳能电池为背接触电池的情况下，第二掺杂半导体部13和第一掺杂半导体部12均设置在半导体基底11对应太阳能电池的背面一侧。
具体的，当本申请实施例提供的太阳能电池为双面接触电池时，第一掺杂半导体部12和第二掺杂半导体部13之间未对应导电半导体部的区域可以通过半导体基底具有的至少部分侧面间隔开。
而当本申请实施例提供的太阳能电池为背接触电池时，定义半导体基底11对应太阳能电池的背面一侧的表面为第一面，定义半导体基底11对应太阳能电池的正面一侧的表面为第二面；基于此，第一掺杂半导体部12和第二掺杂半导体部13之间的分布情况可以至少分为以下两种：
第一种、如图1所示，第一掺杂半导体部12和第二掺杂半导体部13可以沿平行于第一面的方向间隔分布，此时每个导电半导体部14的至少部分沿平行于第一面的方向位于第一掺杂半导体部12的仅部分区域和第二掺杂半导体部13的仅部分区域之间，并且第一掺杂半导体部12和第二掺杂半导体部13之间未对应导电半导体部14的区域可以通过绝缘沟槽等物理间隔，或者通过绝缘材料或本征半导体材料制造的化学膜层等非导电结构间隔开。
第二种、在第二掺杂半导体部13为形成在半导体基底11上的掺杂半导体层的情况下，第二掺杂半导体部13覆盖在第一掺杂半导体部12背离半导体基底11一侧的部分上方，此时每个导电半导体部14的至少部分沿平行于半导体基底11的方向位于第一掺杂半导体部12的仅部分区域和第二掺杂半导体部13的仅部分区域之间，并且第一掺杂半导体部12和第二掺杂半导体部13之间未对应导电半导体部14的区域可以通过绝缘材料或本征半导体材料制造的化学膜层等非导电结构(如掺杂硅玻璃层和/或绝缘掩膜层等)间隔开。
从材料方面来讲，当第二掺杂半导体部13为设置于半导体基底11相应区域之上的掺杂半导体层时，第二掺杂半导体部13的材料可以包括硅、锗硅、锗或砷化镓等任一种半导体材料。从物质的排列形式方面来讲，第二掺杂半导体部13的晶相可以为非晶、微晶、纳米晶、单晶或多晶等。
其次，如图5所示，当第二掺杂半导体部13为设置于半导体基底11相应区域之上的掺杂半导体层时，第二掺杂半导体部13可以直接形成在半导体基底11的相应区域上。或者，如图6所示，太阳能电池还可以包括至少位于半导体基底11和第二掺杂半导体部13之间的第二界面钝化层19。该第二界面钝化层19的材料和厚度可以根据第二掺杂半导体部13的材料、以及实际需求设置，此处不做具体限定。例如：当第二掺杂半导体部13为掺杂多晶硅层时，第二界面钝化层19为隧穿钝化层。又例如：当第二掺杂半导体部13为掺杂非晶硅层时，第二界面钝化层19为本征非晶硅层。
另外，本申请实施例对第二掺杂半导体部13内的载流子浓度和掺杂元素浓度不做具体限定，只要能够应用至本申请实施例提供的太阳能电池中均可。
对于导电半导体部14来说，前文所述的每个导电半导体部14至少部分位于第一掺杂半导体部12和第二掺杂半导体部13之间中的“之间”为广义上的之间。具体的，在本申请实施例提供的太阳能电池为双面接触电池的情况下，每个导电半导体部14至少部分位于第一掺杂半导体部12和第二掺杂半导体部13之间可以是指：如图2和图3所示，每个导电半导体部14在太阳能电池的侧面上的正投影的至少部分位于第一掺杂半导体部12在太阳能电池的侧面上的正投影和第二掺杂半导体部13在太阳能电池的侧面上的正投影之间。如图1和图4所示，而在本申请实施例提供的太阳能电池为背接触电池的情况下，每个导电半导体部14至少部分位于第一掺杂半导体部12和第二掺杂半导体部13之间可以是指：每个导电半导体部14在半导体基底11对应太阳能电池背面一侧的正投影的至少部分位于第一掺杂半导体部12在半导体基底11对应太阳能电池背面一侧的正投影和第二掺杂半导体部13在半导体基底11对应太阳能电池背面一侧的正投影之间。
从形成位置方面来讲，本申请实施例提供的太阳能电池中，导电半导体部14的设置位置至少具有以下三种情况：
第一种、如图7所示，至少一个导电半导体部14可以仅位于第一掺杂半导体部12和第二掺杂半导体部13之间。在此情况下，第一掺杂半导体部12和第二掺杂半导体部13均是形成在半导体基底11内的掺杂半导体区、且至少一个导电半导体部14是形成在半导体基底11内的导电半导体区；或者，第一掺杂半导体部12、第二掺杂半导体部13和至少一个导电半导体部14可以均是形成在半导体基底11上的掺杂半导体层。另外，如图7所示，至少一个导电半导体部14可以是沿平行于半导体基底11形成有第一掺杂半导体部12和第二掺杂半导体部13的表面的方向位于第一掺杂半导体部12和第二掺杂半导体部13之间。或者，如图2、图3和图5所示，至少一个导电半导体部14也可以是沿平行于半导体基底11的厚度方向位于第一掺杂半导体部12和第二掺杂半导体部13之间。
第二种、如图8至图11所示，第一掺杂半导体部12和第二掺杂半导体部13中的至少一者为形成在半导体基底11上的掺杂半导体层，且至少一个导电半导体部14位于第一掺杂半导体部12和第二掺杂半导体部13之间、并延伸至掺杂半导体层和半导体基底11之间。在此情况下，如图8所示，可以是在第一掺杂半导体部12和第二掺杂半导体部13中，仅第一掺杂半导体部12为在半导体基底11上的掺杂半导体层。至少一个导电半导体部14为形成在半导体基底11内的导电半导体区，第二掺杂半导体部13为形成在半导体基底11内的掺杂半导体区；并且至少一个导电半导体部14位于第一掺杂半导体部12和第二掺杂半导体部13之间、并延伸至第一掺杂半导体部12和半导体基底11之间。或者，如图9所示，也可以是在第一掺杂半导体部12和第二掺杂半导体部13中，仅第二掺杂半导体部13为在半导体基底11上的掺杂半导体层。至少一个导电半导体部14为形成在半导体基底11内的导电半导体区，第一掺杂半导体部12为形成在半导体基底11内的掺杂半导体区；并且至少一个导电半导体部14位于第一掺杂半导体部12和第二掺杂半导体部13之间、并延伸至第二掺杂半导体部13和半导体基底11之间。又或者，如图10所示，还可以是第一掺杂半导体部12和第二掺杂半导体部13均为形成在半导体基底11上的掺杂半导体层，至少一个导电半导体部14为形成在半导体基底11内的导电半导体区，并且至少一个导电半导体部14位于第一掺杂半导体部12和第二掺杂半导体部13之间、并延伸至半导体基底11与第一掺杂半导体部12和第二掺杂半导体部13之间。还或者，如图11所示，又可以是第一掺杂半导体部12和第二掺杂半导体部13均为形成在半导体基底11上的掺杂半导体层，至少一个导电半导体部14为形成在半导体基底11内的导电半导体层，并且至少一个导电半导体部14位于第一掺杂半导体部12和第二掺杂半导体部13之间、并延伸至半导体基底11与第一掺杂半导体部12之间和/或半导体基底11与第二掺杂半导体部13之间。
第三种、如图12至图15所示，至少一个导电半导体部14为形成在半导体基底11上的导电半导体层，且导电半导体层位于第一掺杂半导体部12和第二掺杂半导体部13之间、并延伸至第一掺杂半导体部12和第二掺杂半导体部13中的至少一者背离半导体基底11一侧的部分上方。在此情况下，如图12所示，第一掺杂半导体部12和第二掺杂半导体部13均为形成在半导体基底11内的掺杂半导体区，并且至少一个导电半导体部14位于第一掺杂半导体部12和第二掺杂半导体部13之间、并分别延伸至第一掺杂半导体部12和第二掺杂半导体部13背离半导体基底11一侧的部分上方。或者，如图13和图14所示，第一掺杂半导体部12和第二掺杂半导体部13中的一者为形成在半导体基底11内的掺杂半导体区、另一者为形成在半导体基底11上的掺杂半导体层，并且，至少一个导电半导体部14位于第一掺杂半导体部12和第二掺杂半导体部13之间、并至少延伸至掺杂半导体层背离半导体基底11一侧的部分上方。又或者，如图15示，第一掺杂半导体部12和第二掺杂半导体部13均为形成在半导体基底11上的掺杂半导体层，并且至少一个导电半导体部14位于第一掺杂半导体部12和第二掺杂半导体部13之间、并分别延伸至第一掺杂半导体部12和第二掺杂半导体部13中至少一者背离半导体基底11一侧的部分上方。
由上述内容可以看出，导电半导体部14的设置方式具有多种可选方案，便于根据不同应用场景要求和实际制造精度确定合适方案，提高本申请实施例提供的太阳能电池在不同应用场景下的适用性。
从导电类型方面来讲，导电半导体部14沿自身长度方向的不同区域的导电类型与第一掺杂半导体部12和第二掺杂半导体部13中的一者的导电类型相反。其中，沿导电半导体部14的长度方向，依据导电半导体部14的载流子浓度和/或掺杂类型对导电半导体部14进行区域划分。沿导电半导体部14的长度方向，导电半导体部14可以仅包括一个区域；在此情况下，沿导电半导体部14的长度方向，导电半导体部14的载流子浓度和掺杂类型二者均无变化，即相同。或者，沿导电半导体部14的长度方向，导电半导体部14可以包括多个区域；在此情况下，沿导电半导体部14的长度方向，导电半导体部14的载流子浓度和掺杂类型中的一者或二者有变化，导电半导体部14沿自身长度方向的两个相邻区域具有不同的载流子浓度和/或不同的掺杂类型。其中，如图16所示，当导电半导体部14沿自身长度方向的载流子浓度和掺杂类型均相同时，导电半导体部14仅包括一个区域。如图17至图19所示，当导电半导体部14沿自身长度方向的载流子浓度和掺杂类型中的至少一者不同时，导电半导体部14包括多个区域。对于导电半导体部14沿自身长度方向的任一区域，该区域具有沿着该导电半导体部的长度方向的长度以及沿着与该导电半导体部的长度方向垂直的方向的宽度。本申请实施例对导电半导体部14沿自身长度方向的不同区域的导电类型不做具体限定，只要能够使得第一掺杂半导体部12的仅部分区域和第二掺杂半导体部13的仅部分区域通过上述至少一个导电半导体部14电性连接均可。
具体的，如图16所示，至少一个导电半导体部14沿自身长度方向的不同区域的导电类型可以相同，此时该导电半导体部14的导电类型可以与第一掺杂半导体部12的导电类型相反，也可以与第二掺杂半导体部13的导电类型相反，并且第一掺杂半导体部12和第二掺杂半导体部13中与导电半导体部14的导电类型相反的一者与导电半导体部14形成对接结。
或者，如图17至图19所示，至少一个导电半导体部14沿自身长度方向的不同区域中至少一对区域的导电类型可以相反，每对区域为同一导电半导体部14中沿自身长度方向相邻的两个区域。此时，导电半导体部14中，导电类型相反的一对区域形成对接结，并且第一掺杂半导体部12和第二掺杂半导体部13中与导电半导体部14相接触的区域与导电半导体部14的导电类型相反的一者也会与导电半导体部14相接触的区域形成对接结。
在实际的应用过程中，至少一个导电半导体部14可以与第一掺杂半导体部12或第二掺杂半导体部13一体连续，即可以基于相同的材料并通过相同的制造工艺同时形成第一掺杂半导体部12和至少一个导电半导体部14(此时第一掺杂半导体部和至少一个导电半导体部的材料、掺杂元素种类、载流子掺杂浓度和掺杂元素浓度相同)，或基于相同的材料并通过相同的制造工艺同时形成第二掺杂半导体部13和至少一个导电半导体部14(此时第二掺杂半导体部和至少一个导电半导体部的材料、掺杂元素种类、载流子掺杂浓度和掺杂元素浓度相同)。
当然，至少一个导电半导体部14也可以单独与第一掺杂半导体部12和第二掺杂半导体部13形成于半导体基底11，此时导电半导体部14的材料、掺杂元素种类、载流子掺杂浓度和掺杂元素浓度可以根据实际需求设置，此处不做具体限定。
另外，本申请实施例对太阳能电池包括的导电半导体部14的数量不做具体限定，只要能够使得太阳能电池包括的所有导电半导体部对应的传输电阻发热功率P1与太阳能电池对应的反向漏电功率P2比值A大于等于2％、且小于等于50％均可。具体的，P1和P2之间的比值A可以为大于等于2％、且小于等于50％的任一值。例如：P1和P2之间的比值A可以为2％、5％、10％、15％、20％、25％、30％、35％、40％、45％或50％等。
可以理解的是，P1和P2之间的比值A的数值越小，太阳能电池的热斑风险越低，但是对导电半导体部14的电学导通性能要求越高，导致太阳能电池的设计难度越大。另外，P1和P2之间的比值A的数值还与太阳能电池的具体结构相关。基于此，可以根据太阳能电池的具体结构、以及实际需求和实际制造过程确定P1和P2之间的比值A的数值，此处不做具体限定。
例如：P1和P2之间的比值A可以大于等于2％、且小于等于30％。在此情况下，太阳能电池包括的所有导电半导体部14对应的传输电阻发热功率P1与太阳能电池对应的反向漏电功率P2之间的比值A在上述范围内，利于防止因比值A的数值较小而导致对导电半导体部的反向漏电流的传输能力要求过高，利于降低太阳能电池的设计难度。另外，当比值A小于30％时，太阳能电池包括的所有导电半导体部14的传输电阻发热功率相对较小，可以进一步降低太阳能电池在施加反向偏压时的局部区域热量减小幅度，进一步提升太阳能电池在反向漏电情况下具有的抗烧毁能力。
示例性的，如图20至图22所示，上述太阳能电池还可以包括连接电极17。连接电极17至少形成在导电半导体部14背离半导体基底11的一侧。该连接电极17沿自身长度方向连续分布的不同区域的导电类型相同、且与和自身导电类型相反的相邻结构相互间隔。在此情况下，与导电半导体部14相比，连接电极17具有较低的传输电阻。基于此，在太阳能电池发生遮挡的情况下，流向导电半导体部14的反向漏电流会优先流经连接电极17，而不是导电半导体部14被连接电极17覆盖的部分，此时可以进一步降低P1和P2之间的比值A的大小，即降低导电半导体部14在反向漏电过程中自身的产热，进一步提升太阳能电池在反向漏电情况下具有的抗烧毁能力。另外，连接电极17沿自身长度方向连续分布的不同区域的导电类型相同、且与和自身导电类型相反的相邻结构相互间隔，防止因连接电极17沿自身长度方向连续分布的不同区域出现异性搭接而导致短路，确保太阳能电池具有较高的电学可靠性。
具体的，连接电极17形成在同一导电半导体部14中相邻且导电类型相同的两个区域上的部分可以连续设置，也可以间断设置。其次，上述连接电极17和导电类型与自身相反的相邻结构相互间隔可以是：如图20所示，连接电极17和导电类型与自身相反的同一导电半导体部14具有的不同区域相互间隔；或者，如图21所示，也可以是连接电极17和导电类型与自身相反的第一掺杂半导体部12或第二掺杂半导体部13相互间隔。上述间隔的长度可以根据实际应用场景确定，只要能够防止因连接电极17沿自身长度方向连续分布的不同区域出现异性搭接而导致短路均可。
另外，沿导电半导体部14的长度方向，连接电极17的端部可以延伸至导电类型与自身相同的第一掺杂半导体部12或第二掺杂半导体部13上；甚至如图22所示，沿导电半导体部14的长度方向，连接电极17的端部还可以和导电类型与自身相同的电极电性连接。当然，连接电极还可以仅设置在导电半导体部14沿自身长度方向的部分区域上。
示例性的，如图20至图22所示，在太阳能电池还包括连接电极17的情况下，P1和P2之间的比值A可以大于等于2％、且小于等于45％。例如：该情况下，P1和P2之间的比值A可以为2％、5％、8％、10％、15％、20％、25％、30％、35％、40％或45％等。在此情况下，可以进一步降低P1和P2之间的比值A的上限，降低导电半导体部14在反向漏电过程中自身的最大产热，进一步提升太阳能电池在反向漏电情况下具有的抗烧毁能力。
优选的，不论太阳能电池是否包括连接电极17，本申请实施例提供的太阳能电池中，P1和P2之间的比值A可以优选设置在大于等于10％、且小于等于30％(例如：P1和P2之间的比值A可以为10％、12％、15％、18％、20％、22％、25％、28％或30等)的范围内，以在太阳能电池具有较高工作效率的同时，具有较低的热斑风险。在此情况下，本申请实施例提供的太阳能电池对应的反向击穿电压可以大于等于2V、且小于等于9V(例如：可以是2V、3V、4V、5V、6V、7V、8V或9V等)。在一些示例中，可以通过将P1和P2之间的比值A调整为15％至25％，从而将本申请实施例提供的太阳能电池对应的反向击穿电压降低至5V至8V。
此外，本申请实施例还提供了P1和P2之间的比值A的计算方式，以实现太阳能电池包括的所有导电半导体部14对应的传输电阻发热功率P1与太阳能电池对应的反向漏电功率P2之间的比值A的定量化表征。
示例性的，导电半导体部14位于第一掺杂半导体部12和第二掺杂半导体部13之间的部分沿自身长度方向具有B个区域，B为大于等于1的正整数。并且，在太阳能电池包括的不同导电半导体部14的结构相同的情况下，P1和P2之间的比值A满足公式：其中，Im为太阳能电池的最大功率点电流，Rsq1至RsqB分别为单个导电半导体部14具有的相应各区域的方阻，L1至LB分别为单个导电半导体部14具有的相应各区域的有效电流传输长度，Vr为太阳能电池的反向击穿电压，N为太阳能电池包括的导电半导体部14的总数量，a1至aB分别为单个导电半导体部具有的相应各区域的平均宽度。对于一导电半导体部沿自身长度方向的任一区域，该区域具有沿该导电半导体部的长度方向的长度以及沿与该导电半导体部的长度方向垂直的方向的宽度。在此情况下，由上述比值A的公式中可以看出，在太阳能电池的最大功率点电流和反向击穿电压确定的情况下，导电半导体部具有的相应区域的方阻、有效电流传输长度和平均宽度，以及太阳能电池包括的导电半导体部14的总数量均会影响比值A的大小，可以通过对上述参数进行调整，从而对太阳能电池包括的所有导电半导体部14对应的传输电阻发热功率P1进行调控，在确保太阳能电池在反向漏电情况下具有较高的抗烧毁能力的同时，提高本申请实施例提供的太阳能电池在不同应用场景下的适用性。
本申请各实施例所述的不同导电半导体部14的结构相同是指：不同导电半导体部14沿自身长度方向具有的区域的数量相同，且相对应区域的载流子浓度、掺杂类型、长度以及宽度均相同。
具体的，上述太阳能电池的最大功率点电流Im、以及太阳能电池的反向击穿电压Vr可以通过对太阳能电池进行电学测试获得。Rsq1至RsqB可以通过测量和/或计算方式确定。L1至LB、以及a1至aB分别可以通过测量获得。如图16至图19所示，在太阳能电池不包括上述连接电极17的情况下，沿导电半导体部14的长度方向，导电半导体部14的不同区域是依据不同区域的载流子浓度和/或掺杂类型的不同进行划分。其中，如图16所示，当导电半导体部14沿自身长度方向的不同区域的载流子浓度和掺杂类型均相同时，导电半导体部14仅包括一个区域。如图17至图19所示，当导电半导体部14沿自身长度方向的不同区域的载流子浓度和掺杂类型中的至少一者不同时，导电半导体部14包括多个区域。在上述情况下，如图16至图19所示，L1至LB分别为导电半导体部14具有的相应区域的有效电流传输长度，即该区域在传输漏电流时载流子的有效传输长度。a1至aB分别为导电半导体部14具有的相应区域的平均宽度，即该区域在传输漏电流时沿平行于对接结方向的平均宽度。
示例性的，在太阳能电池还包括连接电极17并且导电半导体部14位于第一掺杂半导体部12和第二掺杂半导体部13之间的部分沿自身长度方向具有B个区域，且B为大于等于1的正整数的情况下，当太阳能电池包括的不同导电半导体部的结构相同时，P1和P2之间的比值A满足公式：其中，Im为太阳能电池的最大功率点电流，Rsq1至RsqB分别为单个导电半导体部具有的相应各区域的方阻，L′1至L′B分别为单个导电半导体部14具有的相应各区域中未对应连接电极17的部分的有效电流传输长度，Vr为太阳能电池的反向击穿电压，N为太阳能电池包括的导电半导体部的总数量，a′1至a′B分别为单个导电半导体部14具有的相应各区域中未对应连接电极的部分的平均宽度，Re为连接电极17的传输电阻、连接电极17分别对应的接触电阻、以及与连接电极17所接触的结构的传输电阻三者的等效电阻。在此情况下，在太阳能电池的最大功率点电流和反向击穿电压确定的情况下，不仅导电半导体部14具有的相应区域的方阻、有效电流传输长度和平均宽度，以及太阳能电池包括的导电半导体部14的总数量均会影响比值A的大小，上述电阻Re也会对比值A的大小造成影响，可以通过对上述参数进行调整，从而对太阳能电池包括的所有导电半导体部对应的传输电阻发热功率P1进行综合且精准的调控，在确保太阳能电池在反向漏电情况下具有较高的抗烧毁能力的同时，提高本申请实施例提供的太阳能电池在不同应用场景下的适用性。
具体的，上述太阳能电池的最大功率点电流Im、以及太阳能电池的反向击穿电压Vr可以通过对太阳能电池进行电学测试获得。Rsq1至RsqB可以通过测量和/或计算方式确定。电阻Re可以通过测量和/或计算方式确定。L′1至L′B、以及a′1至a′B分别可以通过测量获得。如图23和图24所示，在太阳能电池包括上述连接电极17的情况下，沿导电半导体部14的长度方向，导电半导体部14的不同区域是依据不同区域的载流子浓度和/或掺杂类型的不同进行划分。其中，如图21所示，当导电半导体部14沿自身长度方向的不同区域的载流子浓度和掺杂类型均相同时，导电半导体部14仅包括一个区域。如图20、以及图22至图24所示，当导电半导体部14沿自身长度方向的不同区域的载流子浓度和掺杂类型中的至少一者不同时，导电半导体部14包括多个区域。在上述情况下，如图23和图24所示，L′1至L′B分别为导电半导体部14具有的相应区域中未对应连接电极17的部分的有效电流传输长度，即该区域在传输漏电流时自身上方未形成有连接电极17的部分的有效传输长度。a′1至a′B分别为导电半导体部14具有的相应区域中未对应连接电极17的部分的平均宽度，即该区域在传输漏电流时自身上方未形成有连接电极17的部分沿平行于对接结的方向的平均宽度。
由上述内容可以看出，不论太阳能电池是否包括连接电极17，导电半导体部14沿自身长度方向不同区域的具体导电类型、载流子掺杂浓度、掺杂元素浓度和尺寸均会对P1和P2之间的比值A造成影响。基于此，可以根据实际应用场景中对太阳能电池中所有导电半导体部的传输电阻发热功率的要求、以及对降低太阳能电池的热斑风险的要求确定，此处不做具体限定。
示例性的，如前文所示，至少一个导电半导体部14自身具有对接结，或者第一掺杂半导体部12和第二掺杂半导体部13中的一者与至少一个导电半导体部14之间形成对接结的情况下，该对接结包括N型掺杂部、以及与N型掺杂部电性接触的P型掺杂部。在上述情况下，N型掺杂部内的载流子浓度和P型掺杂部内的载流子浓度的乘积可以大于等于1×1037cm-6、且小于等于1×1042cm-6。例如：N型掺杂部内的载流子浓度和P型掺杂部内的载流子浓度的乘积可以为1×1037cm-6、5×1037cm-6、1×1038cm-6、5×1038cm-6、1×1039cm-6、5×1039cm-6、1×1040cm-6、5×1040cm-6、1×1041cm-6、5×1041cm-6、1×1042cm-6等。在此情况下，N型掺杂部内的载流子浓度和P型掺杂部内的载流子浓度与自身的导电能力成正比。基于此，如图26和图27所示，对接结中的N型掺杂部内的载流子浓度和P型掺杂部内的载流子浓度的乘积在上述范围内，N型掺杂部和P型掺杂部中的至少一者内的载流子浓度较高，利于使得基于N型掺杂部和P型掺杂部构成的对接结的I-V特性发生变化，利于使得太阳能电池的输出电压低于对接结的开启电压，解决如图25所示N型掺杂部内的载流子浓度和P型掺杂部内的载流子浓度较低时对接结在开启后正向电流迅速增大而导致漏电损耗较高的问题。换句话说，在太阳能电池处于正常工作情况下，上述对接结在低于开启电压时自身对应的正常复合电流较小，确保太阳能电池具有较高的正向工作效率。同时，N型掺杂部和P型掺杂部中的至少一者内的载流子浓度较高，利于使得对接结在施加反向电压的情况下，反向电流随反向电压的增大而大幅增加，降低对接结在反向漏电时的传输电阻，进一步降低太阳能电池的击穿风险。
示例性的，上述对接结中的N型掺杂部内的载流子浓度可以大于等于1×1019cm-3、且小于等于1×1021cm-3。例如：N型掺杂部内的载流子浓度可以为1×1019cm-3、3×1019cm-3、5×1019cm-3、8×1019cm-3、1×1020cm-3、3×1020cm-3、5×1020cm-3、8×1020cm-3或1×1021cm-3等。该情况下具有的有益效果可以参考前文所述的N型掺杂部内的载流子浓度和P型掺杂部内的载流子浓度的乘积大于等于1×1037cm-6、且小于等于1×1042cm-6的有益效果分析，此处不再赘述。
示例性的，上述对接结中的P型掺杂部内的载流子浓度可以大于等于1×1018cm-3、且小于等于1×1021cm-3。例如：P型掺杂部内的载流子浓度可以为1×1018cm-3、5×1018cm-3、1×1019cm-3、3×1019cm-3、5×1019cm-3、8×1019cm-3、1×1020cm-3、3×1020cm-3、5×1020cm-3、8×1020cm-3或1×1021cm-3等。该情况下具有的有益效果可以参考前文所述的N型掺杂部和P型掺杂部内的载流子浓度的乘积大于等于1×1037cm-6、且小于等于1×1042cm-6的有益效果分析，此处不再赘述。
示例性的，上述N型掺杂部内的掺杂元素浓度可以大于等于6×1020cm-3、且小于等于3.8×1022cm-3。例如：N型掺杂部内的掺杂元素浓度可以为6×1020cm-3、8×1020cm-3、1×1021cm-3、3×1021cm-3、5×1021cm-3、8×1021cm-3、1×1022cm-3、3×1022cm-3或3.8×1022cm-3等。在此情况下，N型掺杂部内的掺杂元素浓度相对较高，利于提高N型掺杂部内的载流子掺杂浓度。而N型掺杂部内的载流子掺杂浓度较高的有益效果可以参考前文，此处不再赘述。
示例性的，上述P型掺杂部内的掺杂元素浓度可以大于等于6×1019cm-3、且小于等于1.3×1023cm-3。例如：P型掺杂部内的掺杂元素浓度可以为6×1019cm-3、1×1020cm-3、6×1020cm-3、8×1020cm-3、1×1021cm-3、3×1021cm-3、5×1021cm-3、8×1021cm-3、1×1022cm-3、3×1022cm-3、5×1022cm-3或1.3×1023cm-3等。在此情况下，P型掺杂部内的掺杂元素浓度相对较高，利于提高P型掺杂部内的载流子掺杂浓度。而P型掺杂部内的载流子掺杂浓度较高的有益效果可以参考前文，此处不再赘述。
至于导电半导体部14的尺寸，因导电半导体部14的尺寸与导电半导体部14对应的对接结沿半导体基底11的厚度方向的对接面积相关，而对接结沿半导体基底11的厚度方向的对接面积的大小直接影响导电半导体部14的传输电阻发热功率，故可以通过对对接结中的N型掺杂部内的载流子浓度、P型掺杂部内的载流子浓度、以及对接结沿半导体基底的厚度方向的对接面积进行综合调整的方式，精准调控导电半导体部的传输电阻发热功率，满足实际应用场景中对太阳能电池的防热斑的要求。
示例性的，在第一掺杂半导体部12和第二掺杂半导体部13位于半导体基底11的同一面的情况下，当N型掺杂部内的载流子浓度大于等于3×1020cm-3、且P型掺杂部内的载流子浓度大于等于2×1019cm-3时，太阳能电池包括的所有导电半导体部14具有的对接结沿半导体基底11的厚度方向的对接面积之和与太阳能电池的背光面的面积的比值可以大于等于1×10-10:1、且小于等于5×10-4:1。例如：在第一掺杂半导体部12和第二掺杂半导体部13位于半导体基底11的同一面的情况下，当N型掺杂部内的载流子浓度为3×1020cm-35×1020cm-3、8×1020cm-3或1×1021cm-3等、且P型掺杂部内的载流子浓度为2×1019cm-3、3×1019cm-3、5×1019cm-3、8×1019cm-3、1×1020cm-3或3×1020cm-3等时，太阳能电池包括的所有导电半导体部14具有的对接结沿半导体基底11的厚度方向的对接面积之和与太阳能电池的背光面的面积的比值可以为1×10-10:1、5×10-10:1、1×10-9:1、5×10-9:1、1×10-8:1、5×10-8:1、1×10-7:1、5×10-7:1、1×10-6:1、1×10-5:1、1×10-4:1或5×10-4:1等。在此情况下，可以理解的是，N型掺杂部内的载流子浓度和P型掺杂部内的载流子浓度与导电半导体部14的方阻大小相关。具体的，在一定范围内，N型掺杂部内的载流子浓度和/或P型掺杂部内的载流子浓度较高时，导电半导体部的方阻相对较小，因此将太阳能电池包括的所有导电半导体部14具有的对接结沿半导体基底11的厚度方向的对接面积之和与太阳能电池的背光面的面积的比值设置为大于等于1×10-10:1、且小于等于5×10-4:1时，在确保将太阳能电池的反向击穿电压降低到合适范围后，可以适当降低对接结的面积，从而降低因对接结的存在而产生的正向复合电流的大小，进一步提高太阳能电池在正向电压区域具有较高的工作效率，利于使得太阳能电池对应的反向击穿电压和工作效率达到平衡。
示例性的，在第一掺杂半导体部和第二掺杂半导体部位于半导体基底的同一面的情况下，当N型掺杂部内的载流子浓度小于3×1020cm-3和/或P型掺杂部内的载流子浓度小于2×1019cm-3时，太阳能电池包括的所有导电半导体部14具有的对接结沿半导体基底11的厚度方向的对接面积之和与太阳能电池的背光面的面积的比值可以大于5×10-4:1、且小于等于1×10-2:1。例如：在第一掺杂半导体部12和第二掺杂半导体部13位于半导体基底11的同一面的情况下，当N型掺杂部内的载流子浓度为1×1019cm-3、3×1019cm-3、5×1019cm-3、8×1019cm-3或3×1020cm-3和/或P型掺杂部内的载流子浓度为1×1018cm-3、5×1018cm-3、1×1019cm-3或2×1019cm-3时，太阳能电池包括的所有导电半导体部14具有的对接结沿半导体基底11的厚度方向的对接面积之和与太阳能电池的背光面的面积的比值可以为6×10-4:1、8×10-4:1、1×10-3:1、3×10-3:1、5×10-3:1、8×10-3:1或1×10-2:1等。在此情况下，当N型掺杂部内的载流子浓度小于3×1020cm-3和/或P型掺杂部内的载流子浓度小于2×1019cm-3时，导电半导体部的方阻相对较大，将太阳能电池包括的所有导电半导体部14具有的对接结沿半导体基底11的厚度方向的对接面积之和与太阳能电池的背光面的面积的比值设置为大于5×10-4:1、且小于等于1×10-2:1，在确保能够降低因对接结的存在而产生的正向复合电流的大小的前体下，通过适当增加对接结的面积，以确保将太阳能电池的反向击穿电压降低到合适范围，利于使得太阳能电池对应的反向击穿电压和工作效率达到平衡。
在一些情况下，如图20至图22所示，太阳能电池还可以包括第一电极15和第二电极16。其中，第一电极15设置在第一掺杂半导体部12背离半导体基底11的一侧，且与第一掺杂半导体部12欧姆接触。第二电极16设置在第二掺杂半导体部13背离半导体基底11的一侧，且与第二掺杂半导体部13欧姆接触。第一电极15和第二电极16物理绝缘。基于此，通过第一电极15和第二电极16将相应导电类型的载流子导出，利于形成光电流。其中，上述物理绝缘是指不接触，即第一电极15和第二电极16互不接触。本申请实施例对第一电极15和第二电极16的材料不做具体限定。
第二方面，本申请实施例提供了一种光伏组件，该光伏组件包括上述第一方面及其各种实现方式提供的太阳能电池。
本申请实施例中第二方面及其各种实现方式的有益效果，可以参考第一方面及其各种实现方式中的有益效果分析，此处不再赘述。
在以上的描述中，对于各层的构图、刻蚀等技术细节并没有做出详细的说明。但是本领域技术人员应当理解，可以通过各种技术手段，来形成所需形状的层、区域等。另外，为了形成同一结构，本领域技术人员还可以设计出与以上描述的方法并不完全相同的方法。另外，尽管在以上分别描述了各实施例，但是这并不意味着各个实施例中的措施不能有利地结合使用。
以上对本申请的实施例进行了描述。但是，这些实施例仅仅是为了说明的目的，而并非为了限制本申请的范围。本申请的范围由所附权利要求及其等价物限定。除非存在技术障碍或矛盾，本申请公开的各种技术特征可以自由组合以形成另外的实施例，这些另外的实施例均在本申请的保护范围中。不脱离本申请的范围，本领域技术人员可以做出多种替代和修改，这些替代和修改都应落在本申请的范围之内。

Claims (11)

  1. 一种太阳能电池，包括：半导体基底，
    第一掺杂半导体部，设置于所述半导体基底之内或之上；
    第二掺杂半导体部，设置于所述半导体基底之内或之上；所述第二掺杂半导体部和所述第一掺杂半导体部的导电类型相反；
    以及至少一个导电半导体部，每个所述导电半导体部至少部分位于所述第一掺杂半导体部和所述第二掺杂半导体部之间，且所述第一掺杂半导体部的仅部分区域和所述第二掺杂半导体部的仅部分区域通过所述至少一个导电半导体部电性连接；其中，
    所述太阳能电池包括的所有所述导电半导体部对应的传输电阻发热功率为P1，所述太阳能电池对应的反向漏电功率为P2，且P1和P2之间的比值A大于等于2％、且小于等于50％。
  2. 根据权利要求1所述的太阳能电池，其中，P1和P2之间的比值A大于等于2％、且小于等于30％。
  3. 根据权利要求1所述的太阳能电池，其中，所述导电半导体部位于所述第一掺杂半导体部和所述第二掺杂半导体部之间的部分沿自身长度方向具有B个区域，所述导电半导体部沿自身长度方向的不同所述区域的导电类型与所述第一掺杂半导体部和所述第二掺杂半导体部中的一者的导电类型相反；B为大于等于1的正整数；
    在所述太阳能电池包括的不同所述导电半导体部的结构相同的情况下，P1和P2之间的比值A满足公式：其中，
    Im为太阳能电池的最大功率点电流，Rsq1至RsqB分别为单个所述导电半导体部具有的相应各区域的方阻，L1至LB分别为单个所述导电半导体部具有的相应各区域的有效电流传输长度，Vr为所述太阳能电池的反向击穿电压，N为所述太阳能电池包括的所述导电半导体部的总数量，a1至aB分别为单个所述导电半导体部具有的相应各区域的平均宽度。
  4. 根据权利要求1所述的太阳能电池，其中，所述太阳能电池还包括连接电极；所述连接电极至少形成在所述导电半导体部背离所述半导体基底的一侧；所述连接电极沿自身长度方向连续分布的不同区域的导电类型相同、且与和自身导电类型相反的相邻结构相互间隔。
  5. 根据权利要求4所述的太阳能电池，其中，P1和P2之间的比值A大于等于2％、且小于等于45％。
  6. 根据权利要求4所述的太阳能电池，其中，所述导电半导体部位于所述第一掺杂半导体部和所述第二掺杂半导体部之间的部分沿自身长度方向具有B个区域，所述导电半导体部沿自身长度方向的不同所述区域的导电类型与所述第一掺杂半导体部和所述第二掺杂半导体部中的一者的导电类型相反；B为大于等于1的正整数；
    在所述太阳能电池包括的不同所述导电半导体部的结构相同的情况下，P1和P2之间的比值A满足公式：其中，
    Im为太阳能电池的最大功率点电流，Rsq1至RsqB分别为单个所述导电半导体部具有的相应各区域的方阻，L′1至L′B分别为单个所述导电半导体部具有的相应各区域中未对应所述连接电极的部分的有效电流传输长度，Vr为所述太阳能电池的反向击穿电压，N为所述太阳能电池包括的所述导电半导体部的总数量，a′1至a′B分别为单个所述导电半导体部具有的相应各区域中未对应所述连接电极的部分的平均宽度，Re为所述连接电极的传输电阻、所述连接电极对应的接触电阻、以及与所述连接电极所接触的结构的传输电阻三者的等效电阻。
  7. 根据权利要求1所述的太阳能电池，其中，至少一个所述导电半导体部自身具有对接结，或，所述第一掺杂半导体部和所述第二掺杂半导体部中的一者与至少一个所述导电半导体部之间形成对接结；所述对接结包括N型掺杂部、以及与所述N型掺杂部电性接触的P型掺杂部；其中，
    所述N型掺杂部内的载流子浓度和所述P型掺杂部内的载流子浓度的乘积大于等于1×1037cm-6、且小于等于1×1042cm-6；和/或，
    所述N型掺杂部内的载流子浓度大于等于1×1019cm-3、且小于等于1×1021cm-3；和/或，
    所述P型掺杂部内的载流子浓度大于等于1×1018cm-3、且小于等于1×1021cm-3。
  8. 根据权利要求7所述的太阳能电池，其中，在所述第一掺杂半导体部和所述第二掺杂半导体部位于所述半导体基底的同一面的情况下，当所述N型掺杂部内的载流子浓度大于等于3×1020cm-3、且所述P型掺杂部内的载流子浓度大于等于2×1019cm-3时，所述太阳能电池包括的所有所述导电半导体部具有的对接结沿所述半导体基底的厚度方向的对接面积之和与所述太阳能电池的背光面的面积的比值大于等于1×10-10:1、且小于等于5×10-4:1。
  9. 根据权利要求7所述的太阳能电池，其中，在所述第一掺杂半导体部和所述第二掺杂半导体部位于所述半导体基底的同一面的情况下，当所述N型掺杂部内的载流子浓度小于3×1020cm-3和/或所述P型掺杂部内的载流子浓度小于2×1019cm-3时，所述太阳能电池包括的所有所述导电半导体部具有的对接结沿所述半导体基底的厚度方向的对接面积之和与所述太阳能电池的背光面的面积的比值大于5×10-4:1、且小于等于1×10-2:1。
  10. 根据权利要求1～9中任一项所述的太阳能电池，其中，至少一个所述导电半导体部仅位于所述第一掺杂半导体部和所述第二掺杂半导体部之间；
    或，所述第一掺杂半导体部和所述第二掺杂半导体部中的至少一者为形成在所述半导体基底上的掺杂半导体层，且至少一个所述导电半导体部位于所述第一掺杂半导体部和所述第二掺杂半导体部之间、并延伸至所述掺杂半导体层和所述半导体基底之间；
    或，至少一个所述导电半导体部为形成在所述半导体基底上的导电半导体层，且所述导电半导体层位于所述第一掺杂半导体部和所述第二掺杂半导体部之间、并延伸至所述第一掺杂半导体部和所述第二掺杂半导体部中的至少一者背离所述半导体基底一侧的部分上方。
  11. 一种光伏组件，包括：根据权利要求1～10中任一项所述的太阳能电池。
PCT/CN2025/080265 2024-06-19 2025-03-03 一种太阳能电池和光伏组件 Pending WO2025260830A1 (zh)

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