WO2025249387A1

WO2025249387A1 - Semiconductor device and distance measurement device

Info

Publication number: WO2025249387A1
Application number: PCT/JP2025/018977
Authority: WO
Inventors: Yoshiki Ebiko
Original assignee: Sony Semiconductor Solutions Corp
Current assignee: Sony Semiconductor Solutions Corp
Priority date: 2024-05-28
Filing date: 2025-05-26
Publication date: 2025-12-04
Anticipated expiration: 2026-11-28
Also published as: JP2025179531A

Abstract

Provided is a semiconductor device. The semiconductor device according to an embodiment of the present disclosure includes a semiconductor layer, a wiring layer, a light-emitting element, and a first light guide member. The wiring layer is provided on a side of a first surface of the semiconductor layer. The light-emitting element is provided on a side of a second surface of the semiconductor layer. The second surface is on an opposite side to the first surface. The first light guide member into which light from the light-emitting element enters is provided on the side of the first surface of the semiconductor layer.

Description

SEMICONDUCTOR DEVICE AND DISTANCE MEASUREMENT DEVICE

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of Japanese Priority Patent Application JP2024-086353 filed May 28, 2024, the entire contents of which are incorporated herein by reference.

The present disclosure relates to a semiconductor device and a distance measurement device.

An FMCW (Frequency Modulated Continuous Wave) LiDAR (Light Detection and Ranging) device including an LD (Laser Diode) and a frequency-sweep characteristic measurement device has been proposed (PTL 1).

[PTL 1] Japanese Unexamined Patent Application Publication No. 2023-172404

Summary

It is desired for a device that emits light to improve light utilization efficiency.

It is desirable to provide a semiconductor device that makes it possible to improve light utilization efficiency.

A semiconductor device according to an embodiment of the present disclosure includes a semiconductor layer, a wiring layer, a light-emitting element, and a first light guide member. The wiring layer is provided on a side of a first surface of the semiconductor layer. The light-emitting element is provided on a side of a second surface of the semiconductor layer. The second surface is on an opposite side to the first surface. The first light guide member into which light from the light-emitting element enters is provided on the side of the first surface of the semiconductor layer.
A distance measurement device according to an embodiment of the present disclosure includes a semiconductor layer, a wiring layer, a light-emitting element, a first light guide member, and a light receiving element. The wiring layer is provided on a side of a first surface of the semiconductor layer. The light-emitting element is provided on a side of a second surface of the semiconductor layer. The second surface is on an opposite side to the first surface. The first light guide member into which light from the light-emitting element enters is provided on the side of the first surface of the semiconductor layer. The light receiving element is provided on the side of the first surface of the semiconductor layer.

Fig. 1 is a diagram illustrating an example of a schematic configuration of a semiconductor device according to an embodiment of the present disclosure. Fig. 2 is a diagram for describing a configuration example of the semiconductor device according to an embodiment of the present disclosure. Fig. 3 is a diagram for describing an example of a signal to be generated by the semiconductor device according to an embodiment of the present disclosure. Fig. 4 is a diagram illustrating an example of a cross-sectional configuration of the semiconductor device according to an embodiment of the present disclosure. Fig. 5 is a diagram for describing a configuration example of the semiconductor device according to an embodiment of the present disclosure. Fig. 6 is a diagram for describing a configuration example of the semiconductor device according to an embodiment of the present disclosure. Fig. 7 is a diagram illustrating an example of the cross-sectional configuration of the semiconductor device according to an embodiment of the present disclosure. Fig. 8A is a diagram illustrating an example of a method of manufacturing the semiconductor device according to an embodiment of the present disclosure. Fig. 8B is a diagram illustrating an example of the method of manufacturing the semiconductor device according to an embodiment of the present disclosure. Fig. 8C is a diagram illustrating an example of the method of manufacturing the semiconductor device according to an embodiment of the present disclosure. Fig. 8D is a diagram illustrating an example of the method of manufacturing the semiconductor device according to an embodiment of the present disclosure. Fig. 8E is a diagram illustrating an example of the method of manufacturing the semiconductor device according to an embodiment of the present disclosure. Fig. 8F is a diagram illustrating an example of the method of manufacturing the semiconductor device according to an embodiment of the present disclosure. Fig. 9 is a diagram for describing a configuration example of a semiconductor device according to Modification example 1 of the present disclosure. Fig. 10 is a diagram for describing a configuration example of the semiconductor device according to Modification example 1 of the present disclosure. Fig. 11 is a diagram for describing a configuration example of the semiconductor device according to Modification example 1 of the present disclosure. Fig. 12 is a diagram for describing a configuration example of a semiconductor device according to Modification example 2 of the present disclosure. Fig. 13 is a diagram for describing a configuration example of the semiconductor device according to Modification example 2 of the present disclosure. Fig. 14 is a diagram for describing a configuration example of the semiconductor device according to Modification example 2 of the present disclosure. Fig. 15 is a diagram for describing a configuration example of a semiconductor device according to Modification example 3 of the present disclosure. Fig. 16 is a block diagram depicting an example of schematic configuration of a vehicle control system. Fig. 17 is a diagram of assistance in explaining an example of installation positions of an outside-vehicle information detecting section and an imaging section. Fig. 18 is a view depicting an example of a schematic configuration of an endoscopic surgery system. Fig. 19 is a block diagram depicting an example of a functional configuration of a camera head and a camera control unit (CCU).

Hereinafter, description is given in detail of embodiments of the present disclosure with reference to the drawings. It is to be noted that the description is given in the following order.
1. Embodiment
2. Modification Examples
3. Usage Examples
4. Practical Application Examples
<1. Embodiment>

Fig. 1 is a diagram illustrating an example of a schematic configuration of a semiconductor device according to an embodiment of the present disclosure. The semiconductor device according to the present disclosure is applicable to, for example, a light-emitting device and a distance measurement device. The semiconductor device 1 may be a device that is configured to execute distance measurement, that is, a distance measurement device. The semiconductor device 1 is configured to execute, for example, FMCW (Frequency Modulated Continuous Wave) distance measurement.

The semiconductor device 1 may transmit and receive a light signal to be frequency-modulated light, and may measure, for example, a distance to a target and a velocity of the target. The semiconductor device 1 may be applied as FMCW-LiDAR (Light Detection and Ranging). It is to be noted that the semiconductor device 1 as the LiDAR device may be referred to as, for example, a laser radar device.

The semiconductor device 1 includes, for example, a photonic integrated circuit (PIC: Photonic Integrated Circuit). The semiconductor device 1 may be manufactured by using a substrate including silicon (a silicon substrate, an SOI (Silicon On Insulator) substrate, etc.), and utilizing a silicon photonics technique. The semiconductor device 1 has, for example, a structure (a stacked structure) in which a plurality of substrates is stacked. It is to be noted that a semiconductor device having a light receiving element may also be referred to as a photodetector.

As illustrated in Fig. 1, the semiconductor device 1 includes, for example, a light source 200, a modulator 15, a coupler 20, a coupler 25, an antenna unit 30, a coupler 40, and a light receiver 50. The semiconductor device 1 may apply a light signal (laser light) to a measurement target and receive the light signal reflected by the measurement target. For example, the semiconductor device 1 applies a frequency-modulated light signal to the measurement target by the light source 200, the antenna unit 30, and the like, and receives the light signal reflected and delayed by the measurement target.

In the semiconductor device 1, for example, a light signal obtained by interfering reference light branched (separated) from output light of the light source 200 with reflected light reflected by the measurement target is inputted to the light receiver 50, and an electric signal having a frequency corresponding to a frequency of the reference light and a frequency of the reflected light is detected. The electric signal generated by receiving the reflected light from the measurement target is, for example, a beat signal having a frequency corresponding to a difference between the frequency of the reference light and the frequency of the reflected light, and is a signal corresponding to a distance to the measurement target.

The modulator 15, the coupler 20, the coupler 25, the antenna unit 30, the coupler 40, the light receiver 50, and the like are provided, for example, on one substrate (a semiconductor substrate such as a silicon substrate or an SOI substrate). The light source 200 is provided on the same substrate together with the antenna unit 30 and the like, and is mounted on the semiconductor device 1. It is to be noted that the semiconductor device 1 may have the stacked structure in which the plurality of substrates is stacked.

The light source 200 includes, for example, one or more light-emitting elements 10. The light-emitting element 10 is configured to generate a light signal. The light-emitting element 10 is configured to output the laser light as the light signal, for example. The light-emitting element 10 may include, for example, a compound semiconductor material of Group III-V.

The light-emitting element 10 includes, for example, InP (indium phosphide), GaAs (gallium arsenide), etc., and has a configuration in which a p-type cladding layer, an active layer, and an n-type cladding layer are stacked on each other. The active layer of the light-emitting element 10 has, for example, a multi-quantum-well (MQW) structure. The light-emitting element 10 may generate the laser light and output the laser light. It is to be noted that the light-emitting element 10 may include a semiconductor optical amplifier (SOA).

The modulator 15 is configured to modulate the frequency of the light signal. The light signal (the laser light) is inputted to (enters) the modulator 15 from the light-emitting element 10 of the light source 200. The modulator 15 is configured to modulate the frequency of the transmitted light signal and to output the frequency-modulated light signal. The modulator 15 may generate and output a signal (a chirp signal) that changes in frequency continuously over time.

The modulator 15 is a phase modulator and includes, for example, a Mach-Zehnder interferometer. The modulator 15 (the phase modulator) may multiplex (combine) the laser light from the light-emitting element 10 and a phase-adjusted laser light, thereby outputting frequency-modulated laser light. The modulator 15 outputs output light that is the frequency-modulated light signal to the antenna unit 30 via the coupler 20.

The light-emitting element 10 and the modulator 15 outputs, for example, the output light that is the frequency-modulated light signal to the measurement target via the antenna unit 30 and the like. The light-emitting element 10 and the modulator 15 may generate the frequency-modulated laser light and output the frequency-modulated laser light. It is to be noted that the light source 200 may include the modulator 15.

The light signal (e.g., the frequency-modulated laser light) transmitted from the modulator 15 is inputted to (enters) the coupler 20. The output light of the modulator 15 is branched (separated) by the coupler 20. In the example illustrated in Fig. 1, a light signal S1 that is a portion of the output light of the modulator 15 is transmitted by the coupler 20 to a side of the antenna unit 30. Further, a light signal (referred to as a reference signal S2) that is another portion of the output light of the modulator 15 is transmitted to a side of the coupler 25 and the light receiver 50.

As an example, the reference signal S2 having a power (a light intensity) of 50% or less of a power of the output light of the modulator 15 is divided from the output light of the modulator 15 as the reference light (local light) and inputted to the coupler 25. The coupler 20 is configured to transmit the light signal and the reference signal based on the output light of the modulator 15. The coupler 20 is configured to cause entering light to branch, and may be referred to as a splitter.

The coupler 25 is, for example, a directional coupler and is coupled between the coupler 20 and the coupler 40. In the example illustrated in Fig. 1, the coupler 25 configures a portion of a circulator 27. The circulator 27 (a circulator circuit) includes, for example, the coupler 20, the coupler 25, and the like, and is configured to switch light signals to be transmitted. The circulator 27 may include the modulator 15.

The circulator 27 is configured to selectively output, for example, the local light (i.e., the reference signal S2) and the reflected light. The circulator 27 may output a reference signal S2 that is a portion of the output light of the modulator 15 to the coupler 40. Further, the circulator 27 may output a light signal S3 that is the reflected light (i.e., reception light) inputted from the antenna unit 30 to the coupler 40.

The antenna unit 30 includes one or a plurality of antennas 31 and is configured to output (transmit) the light signal. The antenna unit 30 may be referred to as an antenna array including the plurality of antennas 31, for example. The antenna unit 30 (the antenna array) may include the plurality of antennas 31 arranged in a predetermined direction.

The antenna unit 30 is configured to output, to an outside, the light signal transmitted from the light-emitting element 10 via the modulator 15 and the coupler 20, for example. In the example illustrated Fig. 1, the frequency-modulated light signal S1 is propagated from the coupler 20 to the antenna unit 30. The antenna unit 30 may output, as the output light (i.e., transmission light or illumination light), the light signal S1 that is the frequency-modulated laser light to the measurement target.

Further, the antenna unit 30 is configured to receive the light signal reflected by the measurement target. The antenna unit 30 may receive the light signal S3 that is the laser light reflected and delayed by the measurement target, for example. The antenna unit 30 outputs the light signal S3 that is the reflected light (i.e., the reception light) to the coupler 40 and the light receiver 50 via the coupler 20.

The antenna unit 30 includes, for example, the plurality of antennas 31, a plurality of switches 32, and a plurality of heaters 35. The antenna 31 is configured to output the light signal. Further, the antenna 31 is configured to receive the light signal reflected by the measurement target. The antenna 31 is a transmission antenna configured to transmit the light signal, and is also a reception antenna configured to receive the light signal.

The antenna 31 includes, for example, a diffraction grating. The antenna 31 includes, for example, silicon (Si), and is configured as a transmission and reception antenna. The antenna 31 may apply the frequency-modulated laser light to the measurement target and receive the laser light reflected and delayed by the measurement target.

The antenna unit 30 includes the plurality of switches 32 provided correspondingly to the plurality of antennas 31, and is configured to select an antenna 31 to which the light signal S1 is to be transmitted from the modulator 15. Each switch 32 of the antenna unit 30 switches transmission paths of the light signal S1. This changes the antennas 31 from which the light signal S1 is to be outputted and changes an output direction (a traveling direction) of the light signal S1.

The heater 35 is provided, for example, around the switch 32 (i.e., an optical switch), and is configured to heat the switch 32. The heater 35 includes, for example, a resistance element (a resistor), and is provided for each switch 32 or for every plurality of switches 32. As an example, as schematically illustrated in Fig. 1, the heater 35 is electrically coupled to a wire, a pad 18, and the like, and is configured to be energized.

In the antenna unit 30, application of heat to a waveguide of the switch 32 by supplying current to the heater 35 makes it possible to change a refractive index of the waveguide and to switch the antennas 31 to which the light signal S1 is to be transmitted. By controlling supplying of the current to the heater 35, the antenna 31 (i.e., the diffraction grating) that outputs the light signal S1 is changed.

Further, for example, the heater 35 may be provided around the antenna 31 and configured to heat the antenna 31. By controlling temperature by the heater 35, a refractive index of the antenna 31 is changed, and a direction of the light signal S1 outputted from the antenna 31 is adjusted. The heater 35 may be provided for each antenna 31 or for every plurality of antennas 31.

The coupler 40 is configured to cause the light signal reflected by the measurement target to interfere with the reference signal, and to output interfered light (interference light). The coupler 40 is provided, for example, as an interferer, and is configured to generate the light signal obtained by combining (multiplexing) the reference light and the reflected light and to output the light signal to the light receiver 50.

In the example illustrated in Fig. 1, the coupler 40 is configured to interfere the reference signal S2 that is the reference light inputted from the modulator 15 and the coupler 25 with the light signal S3 that is the reflected light (i.e., the reception light) inputted from the antenna unit 30. The coupler 40 may transmit the light signal obtained by causing the reference light and the reflected light to interfere with each other to the light receiver 50.

The light receiver 50 includes one or a plurality of light receiving elements 51 (in Fig. 1, a light receiving element 51a and a light receiving element 51b). The light receiving element 51 includes, for example, a photodiode (PD), and is configured to receive the light signal. The light receiver 50 is configured to receive the light signal and to convert the light signal into the electric signal.

In the example illustrated in Fig. 1, the light receiver 50 includes the light receiving element 51a and the light receiving element 51b that are each a balanced photodiode. The light receiving element 51a and the light receiving element 51b are electrically coupled to each other in series. The light receiving element 51a and the light receiving element 51b are each configured to receive the light signal via the coupler 40, for example.

The light receiving elements 51 (in Fig. 1, the light receiving elements 51a and 51b) may each receive light to generate electric charge by photoelectric conversion, and output an electric current. The light receiving element 51 is configured to output a signal based on the reference signal S2 and the light signal S3 reflected by an object. For example, a signal corresponding to a photocurrent flowing through the light receiver 50 is generated in response to reception of a light signal in which the reference signal S2 and the light signal S3 that is the reflected light are mixed, and is outputted as the beat signal.

Further, as in the example illustrated in Fig. 2, for example, the semiconductor device 1 may include a detection circuit 60 and a signal processing circuit 70. The detection circuit 60 includes the light receiver 50 described above and an amplifier circuit 55, and is configured to detect light that enters. The amplifier circuit 55 is electrically coupled to the light receiver 50, for example, and is configured to output the signal based on the photocurrent generated by light receiver 50.

The amplifier circuit 55 is provided for the light receiving element 51a and the light receiving element 51b, and is configured to output a signal S4 based on the photocurrent generated by the light receiving element 51a and the light receiving element 51b. The amplifier circuit 55 includes, for example, a transimpedance amplifier (TIA), and is configured to convert a current signal into a voltage signal.

In the example illustrated in Fig. 2, the amplifier circuit 55 is electrically coupled to a node that couples the light receiving element 51a and the light receiving element 51b to each other. The amplifier circuit 55 may convert the current signal detected in the light receiver 50 into the voltage signal, and output the signal S4 that is the voltage signal to the signal processing circuit 70. The signal S4 may be referred to as a beat signal (or an interference signal). The signal S4 has, for example, a frequency corresponding to a frequency difference between the light signal S1 (and the reference signal S2) and the light signal S3.

The detection circuit 60 (a detector) of the semiconductor device 1 is configured to output the electric signal based on the light signal, as described above. The amplifier circuit 55 includes, for example, a TIA circuit, and may output the signal S4 that is a voltage signal corresponding to the light signal received by the light receiver 50 to the signal processing circuit 70.

Fig. 3 is a diagram for describing an example of a signal to be generated by the semiconductor device according to the embodiment. In Fig. 3, a vertical axis represents frequency f of the light signal that is the chirp signal, and a horizontal axis represents time t. Fig. 3 illustrates the light signal S1 that is the transmission light to the measurement target and the light signal S3 that is the reception light from the measurement target.

The coupler 40 outputs, to the light receiver 50 of the detection circuit 60, a light signal for reference corresponding to the transmitted light signal S1, that is, the interference light obtained by interfering the reference signal S2 with the light signal S3. The detection circuit 60 may receive the interference light from the coupler 40 by the light receiver 50, and generate and output the signal S4 as described above. In the semiconductor device 1, it is possible to determine the distance to the measurement target, the velocity of the measurement target, and the like, by using the signal S4.

The signal processing circuit 70 is configured to execute a signal process. The signal processing circuit 70 includes, for example, a circuit that performs various signal processes on a signal inputted from the amplifier circuit 55. The signal processing circuit 70 includes an arithmetic circuit, a memory circuit, and the like. The signal processing circuit 70 (a signal processor) may include a processor and a memory.

The signal processing circuit 70 may calculate the distance between the semiconductor device 1 and the measurement target, for example, by analyzing the frequency (e.g., a beat frequency) of the signal S4. Further, for example, the signal processing circuit 70 may calculate the velocity (a relative velocity) of the measurement target on the basis of Doppler shift of light.

As an example, the signal processing circuit 70 calculates the velocity of the measurement target on the basis of: the beat frequency based on a case where the frequency of the laser light is increased over time, i.e., a case of an up-chirp; and the beat frequency based on a case where the frequency of the laser light is decreased over time, i.e., a case of a down-chirp.

The signal processing circuit 70 may output, for example, laser light that is a triangularly frequency-modulated light signal S1, and calculate the velocity of the measurement target, the distance to the measurement target, and the like on the basis of the beat frequency of the beat signal of each of the successive up-chirp and down-chirp.

In the example illustrated in Fig. 2, the signal processing circuit 70 includes an AD converter circuit 71 and an arithmetic circuit 72. The AD converter circuit 71 is configured to execute AD (Analog Digital) conversion, and converts an inputted analog signal into a digital signal. The AD converter circuit 71 is an ADC (Analog to Digital Converter). In the AD converter circuit 71, for example, the signal S4 that is the beat signal (the interference signal) is inputted from the amplifier circuit 55.

The AD converter circuit 71 performs an AD converting process on the signal S4 that is the analog signal inputted from the amplifier circuit 55. The AD converter circuit 71 (an AD converter) may, for example, sample the signal S4, and convert the signal S4 that is the analog signal into the digital signal. The AD converter circuit 71 outputs, to the arithmetic circuit 72, the signal S4 converted into the digital signal for each sampling point.

The arithmetic circuit 72 is configured to acquire the signal S4 converted into the digital signal and to execute an arithmetic process. The arithmetic circuit 72 (a calculator) includes, for example, a logic circuit, a memory, and the like. The arithmetic circuit 72 is configured to execute a frequency-analysis process on the signal S4. The arithmetic circuit 72 may also be referred to as an analyzer configured to analyze the signal S4.

The arithmetic circuit 72 performs, for example, FFT (Fast Fourier Transform) on the signal S4 to thereby calculate the distance to the measurement target, the velocity of the measurement target, and the like. The signal processing circuit 70 may generate a signal related to the distance to the measurement target, a signal related to the velocity of the measurement target, and the like, and may output the signals to the outside of the semiconductor device 1.

The signal processing circuit 70 is also a controller (a control circuit) and is configured to control each part of the semiconductor device 1. The signal processing circuit 70 may include a circuit such as a PLL (Phase Locked Loop) or a DAC (Digital to Analog Converter). The signal processing circuit 70 is configured, for example, to supply a signal that controls the light-emitting element 10 of the light source 200 to the light source 200 and to control the light-emitting element 10.

The signal processing circuit 70 is configured to control, for example, frequency-modulation by the modulator 15, scanning of the light signal by the antenna unit 30, a process of generating the beat signal by the detection circuit 60, and the AD converting process performed by the AD converter circuit 71. Further, for example, the signal processing circuit 70 is configured to control the supplying of the current to the heater 35.

Fig. 4 is a diagram illustrating an example of a cross-sectional configuration of the semiconductor device according to the embodiment. The semiconductor device 1 includes a substrate 101 including silicon. The substrate 101 includes, for example, a semiconductor substrate such as an SOI (Silicon On Insulator) substrate or a silicon substrate. In the example illustrated in Fig. 4, the substrate 101 includes a semiconductor layer 110, a wiring layer 91, and an insulating layer 105.

The semiconductor layer 110 may include, for example, a silicone layer (i.e., an active layer) on a BOX (Buried Oxide) layer in the SOI substrate. Further, the semiconductor device 1 includes, for example, a substrate 102 including a semiconductor layer 120 and a wiring layer 92. The semiconductor layer 120 includes a semiconductor substrate (for example, a silicon substrate, an SOI substrate, etc.). It is to be noted that the semiconductor layer 110 or the semiconductor layer 120 may include another semiconductor material or may include any other material.

The semiconductor device 1 has a configuration in which the insulating layer 105, the semiconductor layer 110, the wiring layer 91, the wiring layer 92, and the semiconductor layer 120 are stacked in a Z-axis direction. It is to be noted that, as illustrated in Fig. 4, a direction orthogonal to the Z-axis direction is defined as an X-axis direction, and a direction orthogonal to the Z-axis direction and the X-axis direction is defined as a Y-axis direction. In the following drawings, directions may be expressed with reference to the arrow directions illustrated in Fig. 4, in some cases.

The substrate 101 is provided with, for example, the light source 200, the modulator 15, the coupler 20, the coupler 25, the antenna unit 30, the coupler 40, the light receiver 50, etc., which are described above. In the semiconductor device 1, for example, the wiring layer 91 is provided on a side opposite to a side from which light is outputted by the antenna 31. It can also be said that the wiring layer 91 is provided on a side opposite to a side that the light enters. The semiconductor device 1 can also be referred to as a back side illumination device.

The semiconductor layer 110 has a surface 11S1 and a surface 11S2 that are opposed to each other as illustrated in Fig. 4. The surface 11S2 is a surface on a side opposite to the surface 11S1. The wiring layer 91 is provided on the side of the surface 11S1 of the semiconductor layer 110. The light-emitting element 10 and the insulating layer 105 are provided on the side of the surface 11S2 of the semiconductor layer 110.

The semiconductor layer 120 has a surface 12S1 and a surface 12S2 that are opposed to each other. The surface 12S2 is a surface on a side opposite to the surface 12S1. The surface 12S1 is, for example, an element formation surface on which an element such as a transistor is formed. The surface 12S1 may be provided with a gate electrode, a gate insulating film (e.g., a gate oxide film), and the like. The wiring layer 92 is provided on a side of the surface 12S1 of the semiconductor layer 120.

The semiconductor layer 110 and the wiring layer 91 may be provided with the modulator 15, the coupler 20, the antenna unit 30, the coupler 40, the light receiver 50, and the like. For example, as in the example illustrated in Fig. 4, the light receiver 50 including the light receiving elements 51 (the light receiving element 51a and the light receiving element 51b illustrated in Fig. 1), the heater 35 of the antenna unit 30, and the like are formed on the side of the surface 11S1 of the semiconductor layer 110.

The light receiving element 51 includes, for example, a germanium photodiode (GePD) and is provided on the surface 11S1 of the semiconductor layer 110. It is to be noted that the above-described amplifier circuit 55 is provided in the semiconductor layer 110 and the wiring layer 91, or in the semiconductor layer 120 and the wiring layer 92. Further, the signal processing circuit 70 may be provided in, for example, the semiconductor layer 120 and the wiring layer 92.

The wiring layer 91 and the wiring layer 92 each include, for example, an electrically-conductive film and an insulating film, and includes a plurality of wires, vias, etc. Each of the wiring layer 91 and the wiring layer 92 has, for example, a configuration in which a plurality of wires is stacked via the insulating film as an interlayer insulating film. The wiring layers 91 are 92 are each a multi-layer wiring layer and each include, for example, two or more layers of wires, or three or more layers of wires.

The wire of each of the wiring layers 91 and 92 includes a metal material such as aluminum (Al), tungsten (W), or copper (Cu). It is to be noted that the wire of each of the wiring layers 91 and 92 may include polysilicon (Poly-Si) or another electrically-conductive material. The interlayer insulating film includes, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or the like.

The antenna 31 is provided in the semiconductor layer 110, for example, as in the example illustrated in Fig. 4. The plurality of antennas 31 is formed along the surface 11S1 and the surface 11S2 of the semiconductor layer 110. In the substrate 101, the plurality of antennas 31 is disposed so as to be arranged, for example, in the X-axis direction and the Y-axis direction.

The antenna 31 includes, for example, a waveguide having a plurality of grooves (recesses) provided in the semiconductor layer 110, a waveguide having a plurality of holes (openings) penetrating the semiconductor layer 110, and the like. The antenna 31 may include the diffraction grating provided in the waveguide.

The antenna 31 includes the diffraction grating configured using a periodically formed pattern (e.g., a circular pattern). It is to be noted that a lens may be disposed above the antenna unit 30 for each antenna 31 or for every plurality of antennas 31. The antenna 31 of the antenna unit 30 may transmit and receive the light signal via the lens.

The heater 35 includes, for example, the resistance element (the resistor). The heater 35 is provided around the switch 32 of the antenna unit 30 (i.e., the optical switch), and is configured to heat the switch 32 (see also Fig. 1). Further, the heater 35 may be provided around the antenna 31, and is configured to heat the antenna 31. As schematically illustrated in Fig. 4, for example, the heater 35 is electrically coupled to a via, a wire, etc., of the wiring layer 91, and is configured to be energized.

The semiconductor device 1 includes the light-emitting element 10, a waveguide 81, and a light guide member 85, as in the example illustrated in Fig. 4. The light-emitting element 10 is provided on the side of the surface 11S2 of the semiconductor layer 110. The light-emitting element 10 may be so disposed on the substrate 101 as to be positioned above the waveguide 81 of the semiconductor layer 110.

The light-emitting element 10 is so provided as to be stacked on the semiconductor layer 110 such that, for example, the output light (the light signal) of the light-emitting element 10 enters the waveguide 81 and the light guide member 85. The light-emitting element 10 is, for example, disposed in contact with the waveguide 81 provided in the semiconductor layer 110, and is positioned above the light guide member 85.

The waveguide 81 is, for example, a Si (silicon) waveguide and is provided in the semiconductor layer 110. The waveguide 81 is configured to guide the incoming (entering) light signal. The waveguide 81 may be provided between the light-emitting element 10 and the modulator 15, between the modulator 15 and the antenna unit 30, and the like. In the example illustrated in Fig. 4, the waveguide 81 is configured to transmit (propagate) the light signal from a side of the light-emitting element 10 to a side of the antenna 31, for example.

The light guide member 85 is provided on the side of the surface 11S1 of the semiconductor layer 110, as in the example illustrated in Fig. 4. The light guide member 85 is provided correspondingly to the light-emitting element 10 and the waveguide 81 in the substrate 101. The light guide member 85 is, for example, a structural body provided in the wiring layer 91, and is positioned below the light-emitting element 10. The light guide member 85 is disposed to be opposed to the light-emitting element 10 with the semiconductor layer 110 in which the waveguide 81 is provided interposed therebetween.

The light guide member 85 may be provided below the light-emitting element 10 and along the waveguide 81 of the semiconductor layer 110. The light guide member 85 extends in the X-axis direction (or the Y-axis direction) so as to cover at least a portion of an end surface of the light-emitting element 10 from the side of the surface 11S1 of the semiconductor layer 110, for example.

In the example illustrated in Fig. 4, the light guide member 85 is provided inside the wiring layer 91, and an insulating film 98 that is a portion of the wiring layer 91 is provided between the light guide member 85 and the semiconductor layer 110. It is to be noted that the light guide member 85 may be provided in contact with the semiconductor layer 110 (i.e., the waveguide 81) without having the insulating film 98 interposed between the light guide member 85 and the semiconductor layer 110.

The light guide member 85 is disposed, for example, on a side opposite to the light-emitting element 10 with respect to the waveguide 81. The light guide member 85 is positioned adjacent to a location at which the light-emitting element 10 and the waveguide 81 are coupled to each other. A part in which the light-emitting element 10 and the waveguide 81 are coupled to each other is so positioned as to overlap the light guide member 85. In the semiconductor device 1, the light guide member 85 and the light-emitting element 10 may be so positioned as to sandwich the waveguide 81.

The light guide member 85 is configured, for example, to have a refractive index higher than a refractive index of a material included in the light-emitting element 10. The light guide member 85 may include a material having a refractive index higher than a refractive index of a component (e.g., InP and InGaAs) included in the light-emitting element 10.

The light guide member 85 (the structural body) may have a refractive index higher than a refractive index of the insulating film, e.g., a silicon oxide (SiO2) film, of the wiring layer 91. Further, the light guide member 85 may include a material having a refractive index higher than a refractive index of the semiconductor layer 110.

The light guide member 85 includes, for example, amorphous silicon or polysilicon (Poly-Si). The light guide member 85 may include a silicon compound. It is to be noted that the light guide member 85 may include another material.

In the semiconductor device 1 according to the present embodiment, the light-emitting element 10 is provided on the surface 11S2 of the semiconductor layer 110 as in the example illustrated in Fig. 4. Accordingly, it is possible to dispose the light-emitting element 10 with high flatness in the substrate 101. This makes it possible to improve a yield of the semiconductor device 1.

Further, in the semiconductor device 1, the light guide member 85 having a relatively high refractive index is provided on the side of the surface 11S1 of the semiconductor layer 110. This makes it possible to attract the light generated by the light-emitting element 10 toward the waveguide 81 and the light guide member 85, and to efficiently guide the light toward the side of the antenna unit 30. Providing the light guide member 85 makes it possible to improve light coupling efficiency. It becomes possible to improve an S/N ratio of the light signal.

In the present embodiment, the light-emitting element 10 is provided on the side of the surface 11S2 of the semiconductor layer 110, and the light guide member 85 is provided on the side of the surface 11S1 of the semiconductor layer 110. This makes it possible to secure a thickness (a film thickness) and the flatness of the part at which the light-emitting element 10 and the semiconductor layer 110 are coupled to each other. This makes it possible to improve the light coupling efficiency from the light-emitting element 10 to the semiconductor layer 110 (i.e., the waveguide 81). This also makes it possible to improve the yield of the semiconductor device 1.

The antenna 31 of the semiconductor device 1 is provided in the semiconductor layer 110 as described above. The light signal (the laser light) is inputted to the antenna 31 from the light-emitting element 10 via the light guide member 85 and the waveguide 81. The antenna 31 may output the light signal transmitted via the light guide member 85 and the waveguide 81 to the measurement target.

The semiconductor device 1 may also include a waveguide 82, a light guide member 86, and a light guide member 87, as in the example illustrated in Fig. 4. The waveguide 82 includes, for example, silicon nitride (SiN). The waveguide 82 is configured to guide the light signal to be inputted. The waveguide 82 may, for example, transmit the light that enters via the light guide member 85 and the waveguide 81.

The waveguide 82 is, for example, provided in the wiring layer 91 between the waveguide 81 that is optically coupled to the light-emitting element 10 and the antenna 31. In the example illustrated in Fig. 4, the waveguide 82 is disposed in the wiring layer 91 and is positioned below the waveguide 81 and the antenna 31. It is to be noted that the position at which the waveguide 82 is disposed and a shape of the waveguide 82 are not limited to those illustrated in the drawing, and can be changed as appropriate.

The waveguide 82 is configured to have a refractive index higher than the refractive index of the insulating film of the wiring layer 91, for example. The waveguide 82 may include a material having a refractive index higher than the refractive index of the silicon oxide film (SiO2). The waveguide 82 may include a material having a refractive index higher than the refractive index of the silicon oxide film and lower than a refractive index of silicon.

The light guide member 86 and the light guide member 87 are each provided on the side of the surface 11S1 of the semiconductor layer 110 as in the example illustrated in Fig. 4. Each of the light guide member 86 and the light guide member 87 is, for example, a structural body provided in the wiring layer 91, and is provided around the waveguide 82.

At least a portion of the light guide member 86 is provided, for example, between the waveguide 81 of the semiconductor layer 110 and the waveguide 82 of the wiring layer 91. The light guide member 86 is formed in a region that couples the waveguide 81 and the waveguide 82, and may be referred to as a coupling member. It is to be noted that the light guide member 86 may be provided in contact with the semiconductor layer 110 (i.e., the waveguide 81). Further, the light guide member 86 may be provided in contact with the waveguide 82.

At least a portion of the light guide member 87 is provided, for example, between the antenna 31 of the semiconductor layer 110 and the waveguide 82 of the wiring layer 91. The light guide member 87 is formed in a region that couples the waveguide 82 and the antenna 31, and may be referred to as a coupling member. It is to be noted that the light guide member 87 may be provided in contact with the waveguide of the antenna 31. Further, the light guide member 87 may be provided in contact with the waveguide 82.

The light guide member 86 and the light guide member 87 each include, for example, the same material as the light guide member 85. The light guide member 86 and the light guide member 87 each include, for example, amorphous silicon, polysilicon, or a silicon compound. The light guide member 86 and the light guide member 87 may each include a material different from that included in the light guide member 85.

The light guide member 86 and the light guide member 87 may each have a refractive index higher than the refractive index of the insulating film 98, e.g., a silicon oxide (SiO2) film, of the wiring layer 91. The light guide member 86 and the light guide member 87 may each include, for example, a material having a refractive index higher than the refractive index of the semiconductor layer 110.

The laser light as the light signal is inputted to the antenna 31 of the semiconductor device 1 from the light-emitting element 10 via the waveguide 81, the light guide member 86, the waveguide 82, the light guide member 87, and the like. The antenna 31 may output the laser light transmitted via the waveguide 81, the waveguide 82, and the like to the measurement target.

The semiconductor device 1 is provided with the waveguide 82 including, for example, silicon nitride (SiN) as described above. Accordingly, it is possible to efficiently guide the light signal transmitted from the light-emitting element 10 via the waveguide 81 to the antenna unit 30. Even when the light signal is transmitted over a long distance, providing the waveguide 82 makes it possible to reduce a loss of light.

Further, the semiconductor device 1 may be provided with the light guide member 86 and the light guide member 87. Accordingly, for example, it is possible to suppress a decrease in coupling efficiency between the semiconductor layer 110 and the waveguide 82, and to suppress the loss of light. It is also possible to improve the S/N ratio of the light signal.

In the semiconductor device 1 according to the present embodiment, it is possible to appropriately guide the light (the light signal) from the light-emitting element 10 to the antenna 31 as in the example schematically indicated by arrows in Fig. 5. It becomes possible to achieve a semiconductor device configured to improve light utilization efficiency. For example, it becomes possible to achieve a semiconductor device having favorable performance as a light-emitting device or a distance measurement device.

Fig. 6 is a diagram for describing a configuration example of the semiconductor device according to the embodiment. A thickness t1 (a film thickness) of the light guide member 85 may be, for example, within a range from 10 nm to 1000 nm both inclusive. Further, for example, the thickness t1 of the light guide member 85 may be within a range from 50 nm to 1000 nm both inclusive.

As an example, the thickness t1 of the light guide member 85 may be about 150 nm, or about 200 nm. It is to be noted that the thickness t1 of the light guide member 85 may be greater than or equal to 100 nm and less than or equal to 200 nm, or may be greater than or equal to 100 nm and less than or equal to 300 nm.

Further, a thickness t2 of the semiconductor layer 110 (i.e., the waveguide 81) may be less than or equal to 240 nm. For example, the thickness t2 of the semiconductor layer 110 may be within a range from 10 nm to 240 nm both inclusive. Such a configuration of the semiconductor device 1 as described above makes it possible to effectively improve the light coupling efficiency.

Further, a thickness t3 of the waveguide 82 in the Z-axis direction may be, for example, within a range from 100 nm to 600 nm both inclusive. In this case, it is possible to effectively improve the light coupling efficiency. It becomes possible to reduce the loss of light and to improve the light utilization efficiency.

Further, the semiconductor device 1 may include a light-shielding member 38 as in the example illustrated in Figs. 4 and 6, etc. The light-shielding member 38 is a light-shielding part (a light-shielding film) including a member that blocks light. For example, as in the example illustrated in Fig. 4, etc., the light-shielding member 38 is provided around the antenna 31, and prevents unnecessary light from entering the antenna 31.

The light-shielding member 38 is provided adjacent to the antenna 31, for example, in the substrate 101. As an example, the light-shielding member 38 is provided for each antenna 31, and is also provided between the antennas 31 that are adjacent to each other. It is to be noted that the antenna unit 30 may include the light-shielding member 38. Further, the light-shielding member 38 may be provided around the light receiving element 51.

The light-shielding member 38 is so provided, for example, as to extend from the insulating layer 105 to the surface 11S2 of the semiconductor layer 110. In the example illustrated in Fig. 4, the light-shielding member 38 is so formed as to penetrate the insulating layer 105 around the antenna 31. The light-shielding member 38 may be so provided as to surround the antenna 31 in a plan view. A predetermined potential (voltage), for example, a GND potential (a ground potential), is applied to the light-shielding member 38 via a wire, a via, or the like.

The light-shielding member 38 includes, for example, tungsten (W). It is to be noted that the light-shielding member 38 may include another metal material that blocks light, for example, aluminum (Al), copper (Cu), or the like. The light-shielding member 38 may include a metal compound. The light-shielding member 38 may include a material that absorbs light. The light-shielding member 38 may be referred to as a light-shielding wall that blocks the entering light.

In the semiconductor device 1, the light-shielding member 38 is provided around the antenna 31, the light receiving element 51, and the like, which makes it possible to prevent unnecessary light (for example, stray light) from entering the antenna 31, the light receiving element 51, and the like. For example, it is possible to suppress occurrence of a distance measurement error due to mixing of a stray light component having a frequency that is different from a frequency of the light signal. It is possible to improve measurement accuracy.

Fig. 7 is a diagram illustrating an example of the cross-sectional configuration of the semiconductor device according to the embodiment. As in the example illustrated in Fig. 7, the wiring layer 91 is provided with a plurality of electrodes 95, and the wiring layer 92 is provided with a plurality of electrodes 96. The electrode 95 and the electrode 96 are, for example, each an electrode including copper (Cu).

The electrodes 95 and 96 are each an electrode used for bonding between metal electrodes, and may also be referred to as a bonding electrode. The electrode 95 and the electrode 96 may each include a metal material other than copper, for example, nickel (Ni), cobalt (Co), gold (Au), tin (Sn), etc., or may include other materials.

As an example, the substrate 101 and the substrate 102 are attached to each other by bonding between metal electrodes (the electrode 95 and the electrode 96) including Cu, i.e., by Cu-Cu bonding. The electrode 95 and the electrode 96 allow a circuit of the substrate 101 and a circuit of the substrate 102 to be electrically coupled to each other. It is to be noted that a bump may be used to stack the substrate 101 and the substrate 102.

In the semiconductor device 1, for example, the semiconductor layer 110 in which the light-emitting element 10 is disposed is thermally coupled to the substrate 102 via the electrode 94, the electrode 95, and the electrode 96. As an example, as schematically illustrated in Fig. 7, the semiconductor layer 110 is thermally coupled to the wires and vias of the layer 92, a circuit element of the semiconductor layer 120, or the like, via the electrodes 94, 95, and 96.

In the example illustrated in Fig. 7, the semiconductor layer 110 is thermally coupled to the substrate 102 via an electrode 97. The electrode 97 is provided to penetrate the wiring layer 91. The electrode 97 is, for example, a through electrode including a metal material. It is to be noted that the electrode 97 may include polysilicon or another material.

Configuring the semiconductor device 1 in this way makes it possible to dissipate (release) heat of the light-emitting element 10 to a side of the substrate 102 by the semiconductor layer 110 and the electrodes 95 and 96 or the electrode 97. Accordingly, it is possible to suppress heat accumulation in the light-emitting element 10, and to improve stability of the semiconductor device 1.

Figs. 8A to 8F are diagrams illustrating an example of a method of manufacturing the semiconductor device according to the embodiment. First, as illustrated in Fig. 8A, the substrate 101 including the semiconductor layer 110, an insulating layer 115, and a semiconductor layer 111 is prepared. For example, the substrate 101 is the SOI substrate and the insulating layer 115 is the BOX layer.

Thereafter, as illustrated in Fig. 8B, the waveguide 81, the antenna 31, and the like are formed in the semiconductor layer 110 of the substrate 101. Further, the light guide members 85, 86, and 87, the waveguide 82, the light receiving element 51, and the like are formed on the side of the surface 11S1 of the semiconductor layer 110. In addition, the heater 35, the wire, and the like are sequentially formed to form the wiring layer 91.

Thereafter, the semiconductor layer 110 provided with the wiring layer 91 and the semiconductor layer 120 provided with the wiring layer 92 are opposed to each other, and the substrate 101 and the substrate 102 are bonded to each other as illustrated in Fig. 8C. Thereafter, as illustrated in Fig. 8D, the insulating layer 105 and the semiconductor layer 111 are removed.

Thereafter, as illustrated in Fig. 8E, the light source 200 including the light-emitting element 10 is placed on the surface 11S2 of the semiconductor layer 110. Thereafter, as illustrated in Fig. 8F, the insulating layer 105 is formed. Thereafter, the light-shielding member 38, the electrode 97, and the like are formed in the insulating layer 105. With the manufacturing method described above, it is possible to manufacture the semiconductor device 1 illustrated in Fig. 4 or the like. It is to be noted that the method of manufacturing the semiconductor device described above is merely an example, and another manufacturing method may be employed.

Workings and Effects

The semiconductor device according to the present embodiment includes: a semiconductor layer (semiconductor layer 110); a wiring layer (wiring layer 91) provided on a side of a first surface of the semiconductor layer; a light-emitting element (light-emitting element 10) provided on a side of a second surface of the semiconductor layer, the second surface being on an opposite side to the first surface; and a first light guide member (light guide member 85) into which light from the light-emitting element enters, the first light guide member being provided on the side of the first surface of the semiconductor layer.

In the semiconductor device (semiconductor device 1) according to the present embodiment, the wiring layer 91 is provided on the side of the surface 11S1 of the semiconductor layer 110, and the light-emitting element 10 is provided on the side of the surface 11S2 of the semiconductor layer 110. Further, the semiconductor device 1 includes the light guide member 85 provided on the side of the surface 11S1 of the semiconductor layer. This makes it possible to achieve a semiconductor device configured to improve light utilization efficiency.

Next, description is given of modification examples of the present disclosure. Hereinafter, components similar to those in the foregoing embodiment are denoted by the same reference numerals, and descriptions thereof are omitted as appropriate.
<2. Modification Examples>
<2-1. Modification Example 1>

In the above-described embodiment, the configuration example of the semiconductor device 1 has been described; however, the configuration example is merely an example, and the configuration of the semiconductor device 1 is not limited to the above-described example. Fig. 9 is a diagram for describing a configuration example of a semiconductor device according to Modification example 1 of the present disclosure. As in the example illustrated in Fig. 9, the semiconductor device 1 may have a configuration in which no waveguide 82 is included.

The semiconductor device 1 may exclude the light guide member 86, the light guide member 87, or both. It is to be noted that the light guide member 85 may be provided in contact with the semiconductor layer 110 (i.e., the waveguide 81) as illustrated in Fig. 10. In the example illustrated in Fig. 10, the light guide member 85 is disposed in contact with the surface 11S1 of the semiconductor layer 110.

Fig. 11 is a diagram for describing another configuration example of the semiconductor device according to Modification example 1. As in the example illustrated in Fig. 11, the semiconductor device 1 may have a configuration in which no light-shielding member 38 is included. It is to be noted that, in the insulating layer 105, the light-shielding member 38 may be disposed around the light receiving element 51.
<2-2. Modification Example 2>

Figs. 12 to 14 are each a diagram for describing a configuration example of a semiconductor device according to Modification example 2. In the above-described embodiment, the example has been described in which the substrate 101 and the substrate 102 are thermally coupled to each other by using the electrode 94 and the electrode 97. The semiconductor device 1 may be configured, however, to include only one of the electrode 94 and the electrode 97.

For example, as in the example illustrated in Fig. 12, only the electrode 94 may be disposed, and no electrode 97 may be disposed. Further, as in the example illustrated in Fig. 13 or Fig. 14, only the electrode 97 (the through electrode) may be disposed, and no electrode 94 may be disposed. In the case of the present modification example also, it is possible to dissipate the heat of the light-emitting element 10 via the electrode 94 or the electrode 97. It is to be noted that the electrode 94, the electrode 97, or the like may be coupled to the light-emitting element 10 without using the semiconductor layer 110.
<2-3. Modification Example 3>

The semiconductor device according to the present disclosure is applicable to various devices and circuits using the light-emitting element. For example, the semiconductor device according to the present disclosure is applicable to various light-emitting devices, distance measurement devices, and the like. As in the example illustrated in Fig. 15, the semiconductor device 1 may have a configuration in which no light receiving element is included. The semiconductor device 1 may be configured, for example, as a light-emitting device. The semiconductor device according to the present disclosure is applicable to various electronic devices.
<3. Usage Examples>

The above-described semiconductor device is usable in, for example, various cases where sensing of light such as visible light, infrared light, ultraviolet light, or X-ray is to be performed, as follows.
- Devices for capturing an image used for viewing, e.g., a digital camera, a portable device with a camera function, etc.
- Devices for traffic uses, e.g.: an onboard sensor that captures images of the front, back, surroundings, inside, and the like of an automobile for safe driving such as automatic stop and for recognition of driver's state; a monitoring camera that monitors traveling vehicles and roads; a distance measurement sensor that measures a vehicle-to-vehicle distance; etc.
- Devices to be used for home appliances such as a television, a refrigerator, an air conditioner, or the like, for capturing an image of a gesture of a user and perform a device operation according to the gesture
- Devices for medical and healthcare uses, e.g., an endoscope, a device that performs angiography by receiving infrared light, etc.
- Devices for security uses, e.g., a surveillance camera for security application, a camera for personal authentication use, etc.
- Devices for cosmetic uses, e.g., a skin measuring device that captures an image of skin, a microscope that captures an image of a scalp, etc.
- Devices for sports uses, e.g., an action camera, a wearable camera, and the like for sports applications
- Devices for agriculture uses, e.g., a camera for monitoring a state of fields or crops, etc.
<4. Practical Application Examples>
<Example of Practical Application to Mobile Body>

The technology (the present technology) according to the present disclosure is applicable to a variety of products. For example, the technology according to the present disclosure may be achieved as a device mounted on any type of mobile body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an aircraft, a drone, a vessel, or a robot.

Fig. 16 is a block diagram depicting an example of schematic configuration of a vehicle control system as an example of a mobile body control system to which the technology according to an embodiment of the present disclosure can be applied.

The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. In the example depicted in Fig. 16, the vehicle control system 12000 includes a driving system control unit 12010, a body system control unit 12020, an outside-vehicle information detecting unit 12030, an in-vehicle information detecting unit 12040, and an integrated control unit 12050. In addition, a microcomputer 12051, a sound/image output section 12052, and a vehicle-mounted network interface (I/F) 12053 are illustrated as a functional configuration of the integrated control unit 12050.

The driving system control unit 12010 controls the operation of devices related to the driving system of the vehicle in accordance with various kinds of programs. For example, the driving system control unit 12010 functions as a control device for a driving force generating device for generating the driving force of the vehicle, such as an internal combustion engine, a driving motor, or the like, a driving force transmitting mechanism for transmitting the driving force to wheels, a steering mechanism for adjusting the steering angle of the vehicle, a braking device for generating the braking force of the vehicle, and the like.

The body system control unit 12020 controls the operation of various kinds of devices provided to a vehicle body in accordance with various kinds of programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various kinds of lamps such as a headlamp, a backup lamp, a brake lamp, a turn signal, a fog lamp, or the like. In this case, radio waves transmitted from a mobile device as an alternative to a key or signals of various kinds of switches can be input to the body system control unit 12020. The body system control unit 12020 receives these input radio waves or signals, and controls a door lock device, the power window device, the lamps, or the like of the vehicle.

The outside-vehicle information detecting unit 12030 detects information about the outside of the vehicle including the vehicle control system 12000. For example, the outside-vehicle information detecting unit 12030 is connected with an imaging section 12031. The outside-vehicle information detecting unit 12030 makes the imaging section 12031 image an image of the outside of the vehicle, and receives the imaged image. On the basis of the received image, the outside-vehicle information detecting unit 12030 may perform processing of detecting an object such as a human, a vehicle, an obstacle, a sign, a character on a road surface, or the like, or processing of detecting a distance thereto.

The imaging section 12031 is an optical sensor that receives light, and which outputs an electric signal corresponding to a received light amount of the light. The imaging section 12031 can output the electric signal as an image, or can output the electric signal as information about a measured distance. In addition, the light received by the imaging section 12031 may be visible light, or may be invisible light such as infrared rays or the like.

The in-vehicle information detecting unit 12040 detects information about the inside of the vehicle. The in-vehicle information detecting unit 12040 is, for example, connected with a driver state detecting section 12041 that detects the state of a driver. The driver state detecting section 12041, for example, includes a camera that images the driver. On the basis of detection information input from the driver state detecting section 12041, the in-vehicle information detecting unit 12040 may calculate a degree of fatigue of the driver or a degree of concentration of the driver, or may determine whether the driver is dozing.

The microcomputer 12051 can calculate a control target value for the driving force generating device, the steering mechanism, or the braking device on the basis of the information about the inside or outside of the vehicle which information is obtained by the outside-vehicle information detecting unit 12030 or the in-vehicle information detecting unit 12040, and output a control command to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control intended to implement functions of an advanced driver assistance system (ADAS) which functions include collision avoidance or shock mitigation for the vehicle, following driving based on a following distance, vehicle speed maintaining driving, a warning of collision of the vehicle, a warning of deviation of the vehicle from a lane, or the like.

In addition, the microcomputer 12051 can perform cooperative control intended for automated driving, which makes the vehicle to travel automatedly without depending on the operation of the driver, or the like, by controlling the driving force generating device, the steering mechanism, the braking device, or the like on the basis of the information about the outside or inside of the vehicle which information is obtained by the outside-vehicle information detecting unit 12030 or the in-vehicle information detecting unit 12040.

In addition, the microcomputer 12051 can output a control command to the body system control unit 12020 on the basis of the information about the outside of the vehicle which information is obtained by the outside-vehicle information detecting unit 12030. For example, the microcomputer 12051 can perform cooperative control intended to prevent a glare by controlling the headlamp so as to change from a high beam to a low beam, for example, in accordance with the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detecting unit 12030.

The sound/image output section 12052 transmits an output signal of at least one of a sound and an image to an output device capable of visually or auditorily notifying information to an occupant of the vehicle or the outside of the vehicle. In the example of Fig. 16, an audio speaker 12061, a display section 12062, and an instrument panel 12063 are illustrated as the output device. The display section 12062 may, for example, include at least one of an on-board display and a head-up display.

Fig. 17 is a diagram depicting an example of the installation position of the imaging section 12031.

In Fig. 17, the imaging section 12031 includes imaging sections 12101, 12102, 12103, 12104, and 12105.

The imaging sections 12101, 12102, 12103, 12104, and 12105 are, for example, disposed at positions on a front nose, sideview mirrors, a rear bumper, and a back door of the vehicle 12100 as well as a position on an upper portion of a windshield within the interior of the vehicle. The imaging section 12101 provided to the front nose and the imaging section 12105 provided to the upper portion of the windshield within the interior of the vehicle obtain mainly an image of the front of the vehicle 12100. The imaging sections 12102 and 12103 provided to the sideview mirrors obtain mainly an image of the sides of the vehicle 12100. The imaging section 12104 provided to the rear bumper or the back door obtains mainly an image of the rear of the vehicle 12100. The imaging section 12105 provided to the upper portion of the windshield within the interior of the vehicle is used mainly to detect a preceding vehicle, a pedestrian, an obstacle, a signal, a traffic sign, a lane, or the like.

Incidentally, Fig. 17 depicts an example of photographing ranges of the imaging sections 12101 to 12104. An imaging range 12111 represents the imaging range of the imaging section 12101 provided to the front nose. Imaging ranges 12112 and 12113 respectively represent the imaging ranges of the imaging sections 12102 and 12103 provided to the sideview mirrors. An imaging range 12114 represents the imaging range of the imaging section 12104 provided to the rear bumper or the back door. A bird’s-eye image of the vehicle 12100 as viewed from above is obtained by superimposing image data imaged by the imaging sections 12101 to 12104, for example.

At least one of the imaging sections 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging sections 12101 to 12104 may be a stereo camera constituted of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

For example, the microcomputer 12051 can determine a distance to each three-dimensional object within the imaging ranges 12111 to 12114 and a temporal change in the distance (relative speed with respect to the vehicle 12100) on the basis of the distance information obtained from the imaging sections 12101 to 12104, and thereby extract, as a preceding vehicle, a nearest three-dimensional object in particular that is present on a traveling path of the vehicle 12100 and which travels in substantially the same direction as the vehicle 12100 at a predetermined speed (for example, equal to or more than 0 km/hour). Further, the microcomputer 12051 can set a following distance to be maintained in front of a preceding vehicle in advance, and perform automatic brake control (including following stop control), automatic acceleration control (including following start control), or the like. It is thus possible to perform cooperative control intended for automated driving that makes the vehicle travel automatedly without depending on the operation of the driver or the like.

For example, the microcomputer 12051 can classify three-dimensional object data on three-dimensional objects into three-dimensional object data of a two-wheeled vehicle, a standard-sized vehicle, a large-sized vehicle, a pedestrian, a utility pole, and other three-dimensional objects on the basis of the distance information obtained from the imaging sections 12101 to 12104, extract the classified three-dimensional object data, and use the extracted three-dimensional object data for automatic avoidance of an obstacle. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can recognize visually and obstacles that are difficult for the driver of the vehicle 12100 to recognize visually. Then, the microcomputer 12051 determines a collision risk indicating a risk of collision with each obstacle. In a situation in which the collision risk is equal to or higher than a set value and there is thus a possibility of collision, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display section 12062, and performs forced deceleration or avoidance steering via the driving system control unit 12010. The microcomputer 12051 can thereby assist in driving to avoid collision.

At least one of the imaging sections 12101 to 12104 may be an infrared camera that detects infrared rays. The microcomputer 12051 can, for example, recognize a pedestrian by determining whether or not there is a pedestrian in imaged images of the imaging sections 12101 to 12104. Such recognition of a pedestrian is, for example, performed by a procedure of extracting characteristic points in the imaged images of the imaging sections 12101 to 12104 as infrared cameras and a procedure of determining whether or not it is the pedestrian by performing pattern matching processing on a series of characteristic points representing the contour of the object. When the microcomputer 12051 determines that there is a pedestrian in the imaged images of the imaging sections 12101 to 12104, and thus recognizes the pedestrian, the sound/image output section 12052 controls the display section 12062 so that a square contour line for emphasis is displayed so as to be superimposed on the recognized pedestrian. The sound/image output section 12052 may also control the display section 12062 so that an icon or the like representing the pedestrian is displayed at a desired position.

The description has been given hereinabove of the mobile body control system to which the technology according to an embodiment of the present disclosure is applicable. The technology according to an embodiment of the present disclosure is applicable to the imaging section 12031, for example, of the configurations described above. Specifically, for example, the semiconductor device 1 or the like can be applied to the imaging section 12031. Applying the technology according to an embodiment of the present disclosure to the imaging section 12031 enables obtainment of a photographed image having high definition. It becomes possible to perform highly accurate control utilizing the photographed image in the mobile body control system.
<Example of Practical Application to Endoscopic Surgery System>

The technology according to an embodiment of the present disclosure (present technology) is applicable to various products. For example, the technology according to an embodiment of the present disclosure may be applied to an endoscopic surgery system.

Fig. 18 is a view depicting an example of a schematic configuration of an endoscopic surgery system to which the technology according to an embodiment of the present disclosure (present technology) can be applied.

In Fig. 18, a state is illustrated in which a surgeon (medical doctor) 11131 is using an endoscopic surgery system 11000 to perform surgery for a patient 11132 on a patient bed 11133. As depicted, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as a pneumoperitoneum tube 11111 and an energy treatment tool 11112, a supporting arm apparatus 11120 which supports the endoscope 11100 thereon, and a cart 11200 on which various apparatus for endoscopic surgery are mounted.

The endoscope 11100 includes a lens barrel 11101 having a region of a predetermined length from a distal end thereof to be inserted into a body lumen of the patient 11132, and a camera head 11102 connected to a proximal end of the lens barrel 11101. In the example depicted, the endoscope 11100 is depicted which includes as a hard mirror having the lens barrel 11101 of the hard type. However, the endoscope 11100 may otherwise be included as a soft mirror having the lens barrel 11101 of the soft type.

The lens barrel 11101 has, at a distal end thereof, an opening in which an objective lens is fitted. A light source apparatus 11203 is connected to the endoscope 11100 such that light generated by the light source apparatus 11203 is introduced to a distal end of the lens barrel 11101 by a light guide extending in the inside of the lens barrel 11101 and is irradiated toward an observation target in a body lumen of the patient 11132 through the objective lens. It is to be noted that the endoscope 11100 may be a direct view mirror or may be a perspective view mirror or a side view mirror.

An optical system and an image pickup element are provided in the inside of the camera head 11102 such that reflected light (observation light) from the observation target is condensed on the image pickup element by the optical system. The observation light is photo-electrically converted by the image pickup element to generate an electric signal corresponding to the observation light, namely, an image signal corresponding to an observation image. The image signal is transmitted as RAW data to a CCU 11201.

The CCU 11201 includes a central processing unit (CPU), a graphics processing unit (GPU) or the like and integrally controls operation of the endoscope 11100 and a display apparatus 11202. Further, the CCU 11201 receives an image signal from the camera head 11102 and performs, for the image signal, various image processes for displaying an image based on the image signal such as, for example, a development process (demosaic process).

The display apparatus 11202 displays thereon an image based on an image signal, for which the image processes have been performed by the CCU 11201, under the control of the CCU 11201.

The light source apparatus 11203 includes a light source such as, for example, a light emitting diode (LED) and supplies irradiation light upon imaging of a surgical region to the endoscope 11100.

An inputting apparatus 11204 is an input interface for the endoscopic surgery system 11000. A user can perform inputting of various kinds of information or instruction inputting to the endoscopic surgery system 11000 through the inputting apparatus 11204. For example, the user would input an instruction or a like to change an image pickup condition (type of irradiation light, magnification, focal distance or the like) by the endoscope 11100.

A treatment tool controlling apparatus 11205 controls driving of the energy treatment tool 11112 for cautery or incision of a tissue, sealing of a blood vessel or the like. A pneumoperitoneum apparatus 11206 feeds gas into a body lumen of the patient 11132 through the pneumoperitoneum tube 11111 to inflate the body lumen in order to secure the field of view of the endoscope 11100 and secure the working space for the surgeon. A recorder 11207 is an apparatus capable of recording various kinds of information relating to surgery. A printer 11208 is an apparatus capable of printing various kinds of information relating to surgery in various forms such as a text, an image or a graph.

It is to be noted that the light source apparatus 11203 which supplies irradiation light when a surgical region is to be imaged to the endoscope 11100 may include a white light source which includes, for example, an LED, a laser light source or a combination of them. Where a white light source includes a combination of red, green, and blue (RGB) laser light sources, since the output intensity and the output timing can be controlled with a high degree of accuracy for each color (each wavelength), adjustment of the white balance of a picked up image can be performed by the light source apparatus 11203. Further, in this case, if laser beams from the respective RGB laser light sources are irradiated time-divisionally on an observation target and driving of the image pickup elements of the camera head 11102 are controlled in synchronism with the irradiation timings. Then images individually corresponding to the R, G and B colors can be also picked up time-divisionally. According to this method, a color image can be obtained even if color filters are not provided for the image pickup element.

Further, the light source apparatus 11203 may be controlled such that the intensity of light to be outputted is changed for each predetermined time. By controlling driving of the image pickup element of the camera head 11102 in synchronism with the timing of the change of the intensity of light to acquire images time-divisionally and synthesizing the images, an image of a high dynamic range free from underexposed blocked up shadows and overexposed highlights can be created.

Further, the light source apparatus 11203 may be configured to supply light of a predetermined wavelength band ready for special light observation. In special light observation, for example, by utilizing the wavelength dependency of absorption of light in a body tissue to irradiate light of a narrow band in comparison with irradiation light upon ordinary observation (namely, white light), narrow band observation (narrow band imaging) of imaging a predetermined tissue such as a blood vessel of a superficial portion of the mucous membrane or the like in a high contrast is performed. Alternatively, in special light observation, fluorescent observation for obtaining an image from fluorescent light generated by irradiation of excitation light may be performed. In fluorescent observation, it is possible to perform observation of fluorescent light from a body tissue by irradiating excitation light on the body tissue (autofluorescence observation) or to obtain a fluorescent light image by locally injecting a reagent such as indocyanine green (ICG) into a body tissue and irradiating excitation light corresponding to a fluorescent light wavelength of the reagent upon the body tissue. The light source apparatus 11203 can be configured to supply such narrow-band light and/or excitation light suitable for special light observation as described above.

Fig. 19 is a block diagram depicting an example of a functional configuration of the camera head 11102 and the CCU 11201 depicted in Fig. 18.

The camera head 11102 includes a lens unit 11401, an image pickup unit 11402, a driving unit 11403, a communication unit 11404 and a camera head controlling unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412 and a control unit 11413. The camera head 11102 and the CCU 11201 are connected for communication to each other by a transmission cable 11400.

The lens unit 11401 is an optical system, provided at a connecting location to the lens barrel 11101. Observation light taken in from a distal end of the lens barrel 11101 is guided to the camera head 11102 and introduced into the lens unit 11401. The lens unit 11401 includes a combination of a plurality of lenses including a zoom lens and a focusing lens.

The number of image pickup elements which is included by the image pickup unit 11402 may be one (single-plate type) or a plural number (multi-plate type). Where the image pickup unit 11402 is configured as that of the multi-plate type, for example, image signals corresponding to respective R, G and B are generated by the image pickup elements, and the image signals may be synthesized to obtain a color image. The image pickup unit 11402 may also be configured so as to have a pair of image pickup elements for acquiring respective image signals for the right eye and the left eye ready for three-dimensional (3D) display. If 3D display is performed, then the depth of a living body tissue in a surgical region can be comprehended more accurately by the surgeon 11131. It is to be noted that, where the image pickup unit 11402 is configured as that of stereoscopic type, a plurality of systems of lens units 11401 are provided corresponding to the individual image pickup elements.

Further, the image pickup unit 11402 may not necessarily be provided on the camera head 11102. For example, the image pickup unit 11402 may be provided immediately behind the objective lens in the inside of the lens barrel 11101.

The driving unit 11403 includes an actuator and moves the zoom lens and the focusing lens of the lens unit 11401 by a predetermined distance along an optical axis under the control of the camera head controlling unit 11405. Consequently, the magnification and the focal point of a picked-up image by the image pickup unit 11402 can be adjusted suitably.

The communication unit 11404 includes a communication apparatus for transmitting and receiving various kinds of information to and from the CCU 11201. The communication unit 11404 transmits an image signal acquired from the image pickup unit 11402 as RAW data to the CCU 11201 through the transmission cable 11400.

In addition, the communication unit 11404 receives a control signal for controlling driving of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head controlling unit 11405. The control signal includes information relating to image pickup conditions such as, for example, information that a frame rate of a picked up image is designated, information that an exposure value upon image picking up is designated and/or information that a magnification and a focal point of a picked up image are designated.

It is to be noted that the image pickup conditions such as the frame rate, exposure value, magnification or focal point may be designated by the user or may be set automatically by the control unit 11413 of the CCU 11201 on the basis of an acquired image signal. In the latter case, an auto exposure (AE) function, an auto focus (AF) function and an auto white balance (AWB) function are incorporated in the endoscope 11100.

The camera head controlling unit 11405 controls driving of the camera head 11102 on the basis of a control signal from the CCU 11201 received through the communication unit 11404.

The communication unit 11411 includes a communication apparatus for transmitting and receiving various kinds of information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted thereto from the camera head 11102 through the transmission cable 11400.

Further, the communication unit 11411 transmits a control signal for controlling driving of the camera head 11102 to the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication or the like.

The image processing unit 11412 performs various image processes for an image signal in the form of RAW data transmitted thereto from the camera head 11102.

The control unit 11413 performs various kinds of control relating to image picking up of a surgical region or the like by the endoscope 11100 and display of a picked-up image obtained by image picking up of the surgical region or the like. For example, the control unit 11413 creates a control signal for controlling driving of the camera head 11102.

Further, the control unit 11413 controls, on the basis of an image signal for which image processes have been performed by the image processing unit 11412, the display apparatus 11202 to display a picked up image in which the surgical region or the like is imaged. Thereupon, the control unit 11413 may recognize various objects in the picked up image using various image recognition technologies. For example, the control unit 11413 can recognize a surgical tool such as forceps, a particular living body region, bleeding, mist when the energy treatment tool 11112 is used and so forth by detecting the shape, color and so forth of edges of objects included in a picked up image. The control unit 11413 may cause, when it controls the display apparatus 11202 to display a picked-up image, various kinds of surgery supporting information to be displayed in an overlapping manner with an image of the surgical region using a result of the recognition. Where surgery supporting information is displayed in an overlapping manner and presented to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery with certainty.

The transmission cable 11400 which connects the camera head 11102 and the CCU 11201 to each other is an electric signal cable ready for communication of an electric signal, an optical fiber ready for optical communication or a composite cable ready for both of electrical and optical communications.

Here, while, in the example depicted, communication is performed by wired communication using the transmission cable 11400, the communication between the camera head 11102 and the CCU 11201 may be performed by wireless communication.

The description has been given hereinabove of one example of the endoscopic surgery system, to which the technology according to an embodiment of the present disclosure is applicable. The technology according to an embodiment of the present disclosure is suitably applicable to, for example, the image pickup unit 11402 provided in the camera head 11102 of the endoscope 11100 of the configurations described above. Applying the technology according to an embodiment of the present disclosure to the image pickup unit 11402 makes it possible to provide the endoscope 11100 having high definition.

Although the description has been given hereinabove of the present disclosure with reference to the embodiment, the modification examples, the usage examples, and the practical application examples, the present technology is not limited to the foregoing embodiment and the like, and may be modified in a wide variety of ways. For example, although the foregoing modification examples have been described as modification examples of the foregoing embodiments, the configurations of the respective modification examples may be combined as appropriate.

The semiconductor device according to an embodiment of the present disclosure includes: a semiconductor layer; a wiring layer provided on a side of a first surface of the semiconductor layer; a light-emitting element provided on a side of a second surface of the semiconductor layer, the second surface being on an opposite side to the first surface; and a first light guide member into which light from the light-emitting element enters, the first light guide member being provided on the side of the first surface of the semiconductor layer. This makes it possible to achieve a semiconductor device configured to improve light utilization efficiency.

The distance measurement device according to an embodiment of the present disclosure includes: a semiconductor layer; a wiring layer provided on a side of a first surface of the semiconductor layer; a light-emitting element provided on a side of a second surface of the semiconductor layer, the second surface being on an opposite side to the first surface; a first light guide member into which light from the light-emitting element enters, the first light guide member being provided on the side of the first surface of the semiconductor layer; and a light receiving element provided on the side of the first surface of the semiconductor layer. This makes it possible to achieve a distance measurement device configured to improve light utilization efficiency.

It is to be noted that the effects described herein are merely exemplary and are not limited to the description, and may further include other effects. In addition, the present disclosure may also have the following configurations:
(1) A semiconductor device, comprising:
a first semiconductor layer;
a light-emitting element, wherein the light-emitting element is disposed on a side of a first surface of the first semiconductor layer;
a waveguide, wherein the waveguide is disposed in the first semiconductor layer;
a first wiring layer, wherein the first wiring layer is disposed on a side of a second surface of the first semiconductor layer, and wherein the second surface of the first semiconductor layer is opposite the first surface of the first semiconductor layer; and
a light guide member, wherein the light guide member is disposed in the first wiring layer, and wherein the waveguide is between the light guide member and the light-emitting element.
(2) The semiconductor device according to (1), wherein the light-emitting element is in contact with the waveguide.
(3) The semiconductor device according to (1), wherein the light guide member is spaced apart from the waveguide.
(4) The semiconductor device according to any of (1) to (3), wherein an insulating film of the first wiring layer is between the light guide member and the waveguide.
(5) The semiconductor device according to any of (1) to (4), wherein the light guide member is formed from a material having a refractive index that is higher than a refractive index of a material of the insulating film.
(6) The semiconductor device according to any of (1) to (4), wherein the light guide member includes from a material having a refractive index that is higher than a refractive index of a material of the first semiconductor layer.
(7) The semiconductor device according to any of (1) to (6), wherein the light guide member is in contact with the waveguide.
(8) The semiconductor device according to any of (1) to (7), wherein the light guide member is adjacent a location at which the light-emitting element and the waveguide are coupled to one another.
(9) The semiconductor device according to (1), wherein the light guide member includes a material having a refractive index that is higher than a refractive index of a material included in the light-emitting element.
(10) The semiconductor device according to any of (1) to (9), wherein the light guide member includes amorphous silicon or polysilicon.
(11) The semiconductor device according to any of (1) to (10), further comprising:
an antenna, wherein the antenna is disposed in the first semiconductor layer, and wherein the waveguide and the light guiding member optically couple the light-emitting element to the antenna.
(12) The semiconductor device according to (11), wherein the waveguide is a first waveguide, the device further comprising:
a second waveguide, wherein the second waveguide is disposed in the first wiring layer, wherein a first portion of the first waveguide is disposed between a first portion of the second waveguide and the first surface of the semiconductor layer, and wherein a first portion of the antenna is disposed between a second portion of the second waveguide and first surface of the semiconductor layer.
(13) The semiconductor device according to (12), wherein the second waveguide includes a material having a refractive index that is higher than a refractive index of a material of an insulating film of the first wiring layer.
(14) The semiconductor device according to (12), wherein the light guide member is a first light guide member, the device further comprising:
a second light guide member, wherein the second light guide member is disposed in the first wiring layer, and wherein a first portion of the second light guide member is disposed between the first portion of the first waveguide and the first portion of the second waveguide;
a third light guide member, wherein the third light guide member is disposed in the first wiring layer, and wherein a first portion of the third light guide member is disposed between the first portion of the antenna and the second portion of the second waveguide.
(15) The semiconductor device according to any of (1) to (14), wherein the first side of the first semiconductor layer is a back surface side of the first semiconductor layer.
(16) The semiconductor device according to any of (1) to (15), wherein the light-emitting element, the first semiconductor layer, and the first wiring layer are stacked in a first direction (a Z-axis direction), wherein a thickness of the waveguide in the first direction is 10nm or greater, and wherein a thickness of the light guide member in the first direction is 10nm or greater.
(17) The semiconductor device according to (16), wherein a thickness of the waveguide in the first direction is within a range from 10nm to 240nm, and wherein a thickness of the light guide member in the first direction is within a range from 100nm to 200nm.
(18) The semiconductor device according to (11), further comprising:
a first insulating layer, wherein the first insulating layer is disposed on a side of the first surface of the first semiconductor layer; and
a light shielding member, wherein the light shielding member is disposed in the first insulating layer, and wherein the light shielding member surrounds the antenna in a plan view.
(19) The semiconductor device according to any of (1) to (18), further comprising:
a first substrate, wherein the first semiconductor layer and the first wiring layer are included in a first substrate;
a second substrate, wherein the second substrate includes a second semiconductor layer and a second wiring layer, wherein the first wiring layer of the first substrate is attached to the second wiring layer of the second substrate; and
an electrode, wherein the first semiconductor layer is thermally coupled to the second substrate by the electrode.
(20) A distance measurement device, comprising:
a first semiconductor layer;
a light-emitting element, wherein the light-emitting element is disposed on a side of a first surface of the first semiconductor layer;
a waveguide, wherein the waveguide is disposed in the first semiconductor layer;
a first wiring layer, wherein the first wiring layer is disposed on a side of a second surface of the first semiconductor layer, and wherein the second surface of the first semiconductor layer is opposite the first surface of the first semiconductor layer;
a light guide member, wherein the light guide member is disposed in the first wiring layer, and wherein the waveguide is between the light guide member and the light-emitting element;
an antenna, wherein the antenna is disposed in the first semiconductor layer, and wherein the light-emitting element is optically coupled to the antenna by the waveguide and the light guide member; and
a light receiver, wherein the light receiver is disposed in the first semiconductor layer.

It should be understood by those skilled in the art that various modifications, combinations, sub-combinations, and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.

Reference Numerals List

1 semiconductor device
10 light-emitting element
15 modulator
20 coupler
31 antenna
51 light receiving element
81, 82 waveguide
85, 86, 87 light guide member
70 signal processing circuit

Claims

A semiconductor device, comprising:
a first semiconductor layer;
a light-emitting element, wherein the light-emitting element is disposed on a side of a first surface of the first semiconductor layer;
a waveguide, wherein the waveguide is disposed in the first semiconductor layer;
a first wiring layer, wherein the first wiring layer is disposed on a side of a second surface of the first semiconductor layer, and wherein the second surface of the first semiconductor layer is opposite the first surface of the first semiconductor layer; and
a light guide member, wherein the light guide member is disposed in the first wiring layer, and wherein the waveguide is between the light guide member and the light-emitting element.
The semiconductor device according to claim 1, wherein the light-emitting element is in contact with the waveguide.
The semiconductor device according to claim 1, wherein the light guide member is spaced apart from the waveguide.
The semiconductor device according to claim 3, wherein an insulating film of the first wiring layer is between the light guide member and the waveguide.
The semiconductor device according to claim 4, wherein the light guide member is formed from a material having a refractive index that is higher than a refractive index of a material of the insulating film.
The semiconductor device according to claim 1, wherein the light guide member includes a material having a refractive index that is higher than a refractive index of a material of the first semiconductor layer.
The semiconductor device according to claim 1, wherein the light guide member is in contact with the waveguide.
The semiconductor device according to claim 1, wherein the light guide member is adjacent a location at which the light-emitting element and the waveguide are coupled to one another.
The semiconductor device according to claim 1, wherein the light guide member is includes a material having a refractive index that is higher than a refractive index of a material included in the light-emitting element.
The semiconductor device according to claim 1, wherein the light guide member includes amorphous silicon or polysilicon.
The semiconductor device according to claim 1, further comprising:
an antenna, wherein the antenna is disposed in the first semiconductor layer, and wherein the waveguide and the light guiding member optically couple the light-emitting element to the antenna.
The semiconductor device according to claim 11, wherein the waveguide is a first waveguide, the device further comprising:
a second waveguide, wherein the second waveguide is disposed in the first wiring layer, wherein a first portion of the first waveguide is disposed between a first portion of the second waveguide and the first surface of the semiconductor layer, and wherein a first portion of the antenna is disposed between a second portion of the second waveguide and first surface of the semiconductor layer.
The semiconductor device according to claim 12, wherein the second waveguide includes a material having a refractive index that is higher than a refractive index of a material of an insulating film of the first wiring layer.
The semiconductor device according to claim 12, wherein the light guide member is a first light guide member, the device further comprising:
a second light guide member, wherein the second light guide member is disposed in the first wiring layer, and wherein a first portion of the second light guide member is disposed between the first portion of the first waveguide and the first portion of the second waveguide;
a third light guide member, wherein the third light guide member is disposed in the first wiring layer, and wherein a first portion of the third light guide member is disposed between the first portion of the antenna and the second portion of the second waveguide.
The semiconductor device according to claim 1, wherein the first side of the first semiconductor layer is a back surface side of the first semiconductor layer.
The semiconductor device according to claim 1, wherein the light-emitting element, the first semiconductor layer, and the first wiring layer are stacked in a first direction (a Z-axis direction), wherein a thickness of the waveguide in the first direction is 10nm or greater, and wherein a thickness of the light guide member in the first direction is 10nm or greater.
The semiconductor device according to claim 16, wherein a thickness of the waveguide in the first direction is within a range from 10nm to 240nm, and wherein a thickness of the light guide member in the first direction is within a range from 100nm to 200nm.
The semiconductor device according to claim 11, further comprising:
a first insulating layer, wherein the first insulating layer is disposed on a side of the first surface of the first semiconductor layer; and
a light shielding member, wherein the light shielding member is disposed in the first insulating layer, and wherein the light shielding member surrounds the antenna in a plan view.
The semiconductor device according to claim 1, further comprising:
a first substrate, wherein the first semiconductor layer and the first wiring layer are included in a first substrate;
a second substrate, wherein the second substrate includes a second semiconductor layer and a second wiring layer, wherein the first wiring layer of the first substrate is attached to the second wiring layer of the second substrate; and
an electrode, wherein the first semiconductor layer is thermally coupled to the second substrate by the electrode.
A distance measurement device, comprising:
a first semiconductor layer;
a light-emitting element, wherein the light-emitting element is disposed on a side of a first surface of the first semiconductor layer;
a waveguide, wherein the waveguide is disposed in the first semiconductor layer;
a first wiring layer, wherein the first wiring layer is disposed on a side of a second surface of the first semiconductor layer, and wherein the second surface of the first semiconductor layer is opposite the first surface of the first semiconductor layer;
a light guide member, wherein the light guide member is disposed in the first wiring layer, and wherein the waveguide is between the light guide member and the light-emitting element;
an antenna, wherein the antenna is disposed in the first semiconductor layer, and wherein the light-emitting element is optically coupled to the antenna by the waveguide and the light guide member; and
a light receiver, wherein the light receiver is disposed in the first semiconductor layer.