WO2025145481A1 - 一种微机电系统及电声转换装置 - Google Patents

一种微机电系统及电声转换装置 Download PDF

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Publication number
WO2025145481A1
WO2025145481A1 PCT/CN2024/074711 CN2024074711W WO2025145481A1 WO 2025145481 A1 WO2025145481 A1 WO 2025145481A1 CN 2024074711 W CN2024074711 W CN 2024074711W WO 2025145481 A1 WO2025145481 A1 WO 2025145481A1
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Prior art keywords
wave
micro
diaphragm
electromechanical system
crest
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PCT/CN2024/074711
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English (en)
French (fr)
Inventor
斯科特莱尔·嘉吉
凯夫兰雅尼克·皮埃尔
阿努普帕特尔
尤安詹姆斯·博伊德
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AAC Technologies Holdings Shenzhen Co Ltd
AAC Technologies Pte Ltd
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AAC Acoustic Technologies Shenzhen Co Ltd
AAC Technologies Pte Ltd
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Publication of WO2025145481A1 publication Critical patent/WO2025145481A1/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0016—Protection against shocks or vibrations, e.g. vibration damping
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/02—Loudspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/03—Electronic circuits for micromechanical devices which are not application specific, e.g. for controlling, power supplying, testing, protecting
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the present invention relates to the field of electroacoustic conversion devices, and in particular to a micro-electromechanical system and an electroacoustic conversion device.
  • Micro-Electro-Mechanical System is usually composed of two corrugated diaphragms, a counter electrode and a support.
  • the two corrugated diaphragms are respectively arranged on both sides of the counter electrode.
  • the trough of one corrugated diaphragm is connected to the crest of the other corrugated diaphragm through a support, and a sealed space is formed between the crest of one corrugated diaphragm and the trough of the other corrugated diaphragm.
  • the counter electrode is arranged in the sealed space. The pressure in the sealed space is different from the pressure of the surrounding atmosphere outside the cavity.
  • an embodiment of the present invention provides a MEMS, including:
  • a plurality of pairs of electrodes arranged along a first direction
  • the first diaphragm and the second diaphragm are respectively located on two opposite sides of the plurality of electrodes along the second direction and are airtightly connected;
  • a first diaphragm is provided with a plurality of first corrugations, each of the plurality of first corrugations comprises a first crest and a first trough, and the plurality of first crests and the plurality of first troughs are alternately arranged along a third direction;
  • a second diaphragm is provided with a plurality of second corrugations, each of the plurality of second corrugations comprises a second crest and a second trough, and the plurality of second crests and the plurality of second troughs are alternately arranged along a third direction;
  • a plurality of first wave crests and a plurality of second wave troughs are aligned to form a cavity, and a plurality of counter electrodes are disposed in the cavity;
  • the plurality of first wave valleys are respectively aligned with the plurality of second wave peaks, and at least a portion of the plurality of first wave valleys and the corresponding second wave peaks are configured to contact each other.
  • the cavity is hermetically sealed, and the pressure inside the cavity is less than the external atmospheric pressure.
  • the cavity is in a vacuum state.
  • the first wave valleys located at the outermost circle and the second outermost circle of the first diaphragm are in direct contact with the corresponding second wave peaks located at the outermost circle and the second outermost circle of the second diaphragm.
  • the bottom of the first corrugation valley and the top of the second corrugation peak are configured to be flat.
  • a length of a region where a first wave valley and a corresponding second wave peak contact each other in the third direction is equal to or smaller than a planar length of the first wave valley and the corresponding second wave peak.
  • the first diaphragm further comprises one or more bumps, the bumps being arranged at the bottom of the first trough and contacting the top of the second crest.
  • the length of the bumps in the third direction is equal to or less than the length of the plane.
  • the bumps are circular/contacting or linear.
  • the second diaphragm further comprises one or more bumps, the bumps being arranged at the top of the second crest and contacting the bottom of the first trough.
  • the length of the bumps in the third direction is equal to or less than the length of the plane.
  • the bumps are anti-stick bumps or are linear.
  • the first diaphragm further includes one or more pits, wherein the pits are disposed at the bottom of the first wave valley and contact the top of the second wave peak.
  • the second diaphragm further includes one or more pits, wherein the pits are disposed at the top of the second wave crest, and a portion of the top of the second wave crest other than the pits is configured to contact the bottom of the first wave valley.
  • the bottom of the first wave valley and the top of the second wave peak are configured to be offset by a first distance along the third direction. In some embodiments, the first distance is less than the length of the plane.
  • the third direction is radial or lateral.
  • the top of the first wave crest or the bottom of the second wave trough is configured in a dome shape.
  • At least one bottom portion of the first corrugation peak or at least one top portion of the second corrugation valley is configured in a dome shape.
  • the present invention has the following beneficial effects:
  • the two corrugations of the present invention can effectively contact or bond at their respective bottoms when stationary and working normally due to the high pressure gradient forcing the two corrugations to move toward the counter electrode direction/or toward the middle plane of the system.
  • the corrugations with the support removed can move freely in the vertical direction and slide in the horizontal plane, thereby reducing the maximum stress of the device by up to 50%.
  • the MEMS of the present invention has better robustness while maintaining the high acoustic compliance and sensitivity of the sealed double diaphragm.
  • an embodiment of the present invention further provides an electroacoustic conversion device, comprising the MEMS as described above, and a driving circuit electrically connected to the MEMS.
  • FIG. 1 is a schematic structural diagram of a MEMS according to an embodiment of the present invention.
  • FIG. 2 is a partial cross-sectional view of the MEMS in FIG. 1 .
  • FIG. 3 is a partial cross-sectional view of another MEMS according to an embodiment of the present invention.
  • FIG. 4 is a partial cross-sectional view of yet another MEMS according to an embodiment of the present invention.
  • FIG. 5 is a partial cross-sectional view of yet another MEMS according to an embodiment of the present invention.
  • FIG. 6 is a partial cross-sectional view of another MEMS according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram of an electroacoustic converter according to an embodiment of the present invention.
  • the MEMS includes a plurality of electrodes 1 arranged along a first direction, a first diaphragm 2 and a second diaphragm 3 respectively arranged on opposite sides of the electrodes 1 along a second direction and airtightly connected.
  • the plurality of electrodes 1 are arranged at intervals along a third direction, and a support member 8 may also be arranged between adjacent electrodes 1.
  • One end of the support member 8 along the second direction is connected to the first diaphragm 2, and the other end of the support member 8 along the second direction is connected to the second diaphragm 3.
  • the first direction is expressed as a circumferential direction
  • the second direction is expressed as a vertical direction or a thickness direction
  • the third direction is expressed as a radial direction or a lateral direction.
  • the first diaphragm 2 and the second diaphragm 3 are both corrugated conductive diaphragms
  • the first corrugated conductive diaphragm is provided with a plurality of first corrugations
  • the second corrugated conductive diaphragm is provided with a plurality of second corrugations 31
  • the plurality of first corrugations 21 and the plurality of second corrugations 31 are arranged in the same direction.
  • Each of the plurality of first corrugations 21 includes a first crest 211 and a first trough 212, that is, the plurality of first crests 211 and the plurality of first troughs 212 are arranged alternately along a third direction.
  • each of the plurality of second corrugations 31 includes a second crest 311 and a second trough 312, that is, the plurality of second crests 311 and the plurality of second troughs 312 are arranged alternately along the third direction.
  • the outermost end of the first corrugation 21 is the first crest 211
  • the outermost end of the second corrugation 31 is the second trough 312.
  • the outermost end of the first corrugation 21 may also be the first trough 212
  • the outermost end of the second corrugation 31 may correspondingly be the second crest 311.
  • the right edge in Figures 2 to 6 is the edge of the MEMS.
  • the first wave crest 211 and the second wave valley 312 are respectively aligned along the second direction, and form a cavity 4 to accommodate the corresponding counter electrode 1 in the cavity 4.
  • the cavity 4 is airtightly sealed, and the pressure inside the cavity is less than the external atmospheric pressure.
  • the cavity 4 is in a vacuum state.
  • At least part or all of the first wave valleys 212 are aligned with corresponding numbers of second wave peaks 311 and directly contact each other (without support members), and the remaining first wave valleys 212 and second wave peaks 311 are connected to each other via support members 8 .
  • the first corrugated conductive diaphragm 2 and the second corrugated conductive diaphragm 3 may be made of a conductive material or include an insulating film on which a conductive element is provided.
  • the first corrugated conductive diaphragm 2 and the second corrugated conductive diaphragm 3 include a silicon nitride film, wherein a polysilicon electrode is formed on the surface of the diaphragm facing the counter electrode 1 or on the surface of the diaphragm facing away from the counter electrode 1 to provide conductivity.
  • the support member 8 may be integrally constructed with the first corrugated conductive diaphragm 2 or the second corrugated conductive diaphragm 3. Alternatively, the support member 8 may be integrally formed with the counter electrode 1, and then a narrow groove is formed to separate the support member 8 from the counter electrode 1. In some embodiments, the support member 8 may also be formed separately from the first corrugated conductive diaphragm 2 and the second corrugated conductive diaphragm 3. Alternatively, the support member 8 may be formed independently of the counter electrode 1, and then a groove is formed to separate the partition 8 from the counter electrode 1. In one example, after the first corrugated conductive diaphragm 2 and the second corrugated conductive diaphragm 3 are assembled together, the support member 8 is formed between the first trough 212 and the second crest 311.
  • the counter electrode 1 and the support member 8 are arc-shaped and arranged on concentric arcs with a span of less than 360 degrees.
  • the first crest 211, the first trough 212, the second crest 311 and the second trough 312 are all arc-shaped and arranged on concentric arcs with a span of less than 360 degrees.
  • the first corrugated conductive diaphragm 2 and the second corrugated conductive diaphragm 3 are both circular.
  • the spoke 22 is very narrow and each slot, the first crest 211, the first trough 212, the second crest 311 and the second trough 312 span approximately 60 degrees.
  • the first corrugated conductive diaphragm 2 is evenly divided into six parts in its circumferential direction. Each part includes a set of first crests 211 and first troughs 212 alternately arranged in the radial direction of the first corrugated conductive diaphragm 2. Adjacent parts are connected to each other by spokes 22 extending in the radial direction of the first corrugated conductive diaphragm 2.
  • the first wave valleys 212 are evenly arranged along the radial direction of the first corrugated conductive membrane 2 .
  • the second corrugated conductive diaphragm 3 is equally divided into six parts in the circumferential direction thereof, each part comprising a set of second wave crests 311 and second wave valleys 312 alternately arranged in the radial direction of the second corrugated conductive diaphragm 3. Adjacent parts are connected to each other by spokes 22 extending in the radial direction of the second corrugated conductive diaphragm 3.
  • the second wave valleys 312 are evenly arranged in the radial direction of the second corrugated conductive membrane 3 .
  • the counter electrode 1 and the support member 8 are divided into six parts in the circumferential direction, and each part includes a group of concentric arc-shaped counter electrodes 1 and support members 8 arranged in the radial direction. Adjacent parts are connected to each other through spokes 22 extending radially along the first corrugated conductive diaphragm 2. The opposite ends of the arc-shaped counter electrode 1 are respectively connected to the corresponding spokes, so that the counter electrode 1 is suspended between adjacent spokes. The support member 8 is disconnected from the counter electrode 1 and the spokes by a narrow slot.
  • the electrode 1, the support member 8, the first corrugated conductive diaphragm 2 and the second corrugated conductive diaphragm 3 can be divided into other numbers of parts, such as four parts or eight parts, etc. These parts can be arranged uniformly or unevenly in the radial direction of the MEMS.
  • the support member 8, the first corrugated conductive diaphragm 2 and the second corrugated conductive diaphragm 3 can have other shapes, such as square, hexagonal, octagonal, etc.
  • the first trough 212 of the first corrugated conductive diaphragm 2 and the second crest 311 of the second corrugated conductive diaphragm 3 are in contact with each other. That is, the two first troughs 212 and the corresponding second crests 311 near the edge of the first diaphragm 2 along the second direction are arranged to be in contact with each other. Since the stress on the diaphragm corners around the outermost or second outermost support members is the largest at high displacement, this design allows the corresponding troughs 212 and crests 311 to have greater bending freedom, and the stress is released.
  • the first wave valley 212 and/or the top of the second wave peak 311 may adhere to each other and cannot be separated under a higher structural displacement.
  • the following various solutions can be provided to reduce the contact area between the first wave valley and the corresponding second wave peak.
  • the first wave valley 212 and the second wave crest 311 can be prevented from being unable to separate at high structural displacement due to mutual adhesion. That is, along the second direction, the length of the contact portion between the first wave valley 212 and the second wave crest 311 is less than the length of the plane 5 .
  • one or more protrusions 6 may be provided at the bottom of the first trough 212 located at the outermost and second outermost sides on the first diaphragm 2, and/or one or more protrusions 6 may be provided at the top of the second crest 311 located at the outermost and second outermost sides on the second diaphragm 3.
  • the length of the protrusion 6 along the third direction is less than the length of the plane 5 at the bottom of the first trough 212 and the top of the second crest 311.
  • the protrusion 6 By contacting the protrusion 6 with the plane 5 at the top of the second crest 311, the protrusion 6 with the plane 5 at the bottom of the first trough 212, or the plane 5 at the bottom of the first trough 212 and the plane 5 at the top of the second crest 311, the contact area at the bottom of the corrugated conductive film can be reduced, thereby preventing the first trough 212 and the second crest 311 from being unable to separate at high structural displacement due to mutual adhesion.
  • the protrusion 6 is an anti-adhesive protrusion.
  • the contact area at the bottom of the corrugated conductive film may be reduced, thereby preventing the first trough 212 and the second crest 311 from being unable to separate at high structural displacement due to mutual adhesion.
  • the bottom of the first wave valley 212 and the top of the second wave peak 311 are both plane 5.
  • the corrugations involved in the pressure bonding can be offset from each other by a certain length. That is, the bottom of the first wave valley 212 and/or the top of the second wave peak 311 are set to be offset by a first distance along the third direction, wherein the first distance is less than the length of the plane 5.
  • the shape of the corrugations can also be modified to achieve a similar function as the anti-stiction structure.
  • the bottom shape of one diaphragm i.e., the shape of the crests/troughs
  • the dome shape can be easily realized.
  • it can be a single dome shape or multiple dome shapes, which can also be realized by the top diaphragm.
  • the two corrugations Since the high pressure gradient forces the two corrugations together, the two corrugations will effectively combine at their respective bases (peaks or troughs). However, during the highly nonlinear bending exhibited in shock and drop tests, the two corrugations are free to move in the second direction and slide in the first direction as well as the third direction, which eliminates the need to conform one diaphragm shape to another by using a portion of the device with such a corrugated structure. As a result, the diaphragm eliminates a significant factor of additional bending, and stress in this area can be reduced by up to 50%.
  • Another embodiment of the present invention further provides an electroacoustic transducer, as shown in Fig. 7, comprising the above-mentioned MEMS 701 and a driving circuit 702 electrically connected to the MEMS 701.
  • the electroacoustic transducer 700 may be a MEMS microphone or a speaker.

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Abstract

微机电系统包括对电极、第一膜片和第二膜片。第一膜片设有多个第一波纹，每一第一波纹包括第一波峰和第一波谷，多个第一波峰和多个第一波谷沿第三方向交替设置。第二膜片设有多个第二波纹，每一第二波纹包括第二波峰和第二波谷，多个第二波峰和多个第二波谷沿第三方向交替设置。多个第一波峰与多个第二波谷分别对齐形成腔体，多个对电极分别设置在腔体内。多个第一波谷与多个第二波峰分别对齐，并且多个第一波谷中的至少部分与相应的第二波峰被配置为相互接触。该微机电系统在保持密封的双膜片的高声学顺应性和灵敏度的同时，还具有更好的坚固性。

Description

一种微机电系统及电声转换装置 技术领域
本发明涉及电声转换装置领域，特别是涉及一种微机电系统及电声转换装置。
 背景技术
微机电系统（Micro-Electro-Mechanical System，简称MEMS）通常是由两块波纹状膜片、对电极以及支撑件组成，两块波纹状膜片分别设置在对电极的两侧，一个波纹状膜片的波谷与另一个波纹状膜片的波峰通过支撑件连接，并且在一个波纹状膜片的波峰与另一个波纹状膜片的波谷之间形成密封空间，对电极设置在该密封空间内。该密封空间内的压力与腔外周围大气的压力不同。
 技术问题
然而，如果这种结构受到高位移影响，例如强力气流冲击或机械冲击，膜片的特定位置可能会出现高应力，确切地说，主要是在第一根支柱或两根第一根支柱周围的膜片角上可能会出现高应力。这是由于两块膜片通过刚性支柱相互连接，使得每块膜片的单独变形量有限。
因此，希望提供一种改进的微机电系统，它至少可以克服上述问题之一。
 技术解决方案
为解决上述技术问题，本发明的实施例提供了一种MEMS，包括：
沿第一方向设置的多个对电极；
第一膜片和第二膜片，分别位于多个对电极沿第二方向的相对两侧，并气密连接；
第一膜片，设有多个第一波纹，多个第一波纹中的每一个包括第一波峰和第一波谷，多个第一波峰和多个第一波谷沿第三方向交替设置；
第二膜片，设有多个第二波纹，多个第二波纹中的每一个包括第二波峰和第二波谷，多个第二波峰和多个第二波谷沿第三方向交替设置；
多个第一波峰与多个第二波谷分别对齐形成腔体，多个对电极分别设置在腔体内；
多个第一波谷与多个第二波峰分别对齐，并且多个第一波谷中的至少部分与相应的第二波峰被配置为相互接触。
在一些实施例中，腔体气密密封，腔体内部的压力小于外部大气压。
在一些实施例中，腔体处于真空状态。
在一些实施例中，位于第一膜片最外圈和次外圈的第一波谷与位于第二膜片最外圈和次外圈的相应第二波峰直接接触。
在一些实施例中，第一波谷的底部和第二波峰的顶部设置为平面。
在一些实施例中，第一波谷与相应的第二波峰在第三方向上相互接触的区域的长度等于或小于第一波谷和相应的第二波峰的平面长度。
在一些实施例中，第一膜片还包括一个或多个凸块，凸块设置在第一波谷的底部，并与第二波峰的顶部相接触。在一些实施例中，凸块在第三方向上的长度等于或小于平面的长度。在一些实施例中，凸块形成圆形/接触或呈线形。
在一些实施例中，第二膜片还包括一个或多个凸块，凸块设置在第二波峰的顶部，并与第一波谷的底部相接触。在一些实施例中，凸块在第三方向上的长度等于或小于平面的长度。在一些实施例中，凸块是抗粘凸块或呈线状。
在一些实施例中，第一膜片还包括一个或多个凹坑，凹坑设置在第一波谷的底部，并与第二波峰的顶部相接触。
在一些实施例中，第二膜片还包括一个或多个凹坑，凹坑设置在第二波峰的顶部，第二波峰顶部除凹坑以外的部分被配置为与第一波谷的底部相接触。
在一些实施例中，第一波谷的底部和第二波峰的顶部被配置为沿第三方向偏移第一距离。在一些实施例中，第一距离小于平面的长度。
在一些实施例中，第三方向为径向或横向。
在一些实施例中，第一波峰的顶部或第二波谷的底部被设置成圆顶形状。
在一些实施例中，第一波峰的至少一个底部或第二波谷的至少一个顶部被配置成圆顶形状。
本发明与现有技术相比，具有以下有益效果：
通过移除第一膜片与第二膜片之间的至少部分支撑件，使得至少部分第一波谷与相应的第二波峰相互接触，即，在结构两侧的大气压力相等的情况下，由于高压梯度迫使两个波纹向对电极方向/或向系统的中间平面移动，本发明的两个波纹因此可以在静止和正常工作时有效地在各自底部接触或粘合。当系统受到较大位移影响时，被移除支撑件的波纹可以在竖直方向自由移动并在水平面上滑动，从而使装置的最大应力最多可降低50%。
因此，本发明的微机电系统在保持密封的双膜片的高声学顺应性和灵敏度的同时，还具有更好的坚固性。
为解决上述技术问题，本发明实施例还提供一种电声转换装置，包括如上所述的MEMS，和与该MEMS电连接的驱动电路。
上述电声转换装置对于现有技术所具有的优势与上述的MEMS相同，在此不再赘述。
 附图说明
为了更清楚地说明本发明实施例的技术方案，下面简要介绍用于描述本发明实施例的附图。显然，以下描述中的附图仅涉及本发明的部分实施例。对于本领域技术人员而言，在不做出创造性努力的情况下，可以根据这些附图获得其他附图。
图1为根据本发明实施例的MEMS的结构示意图。
图2为图1中MEMS的部分剖视图。
图3为根据本发明实施例的另一MEMS的部分剖视图。
图4为根据本发明实施例的又一MEMS的部分剖视图。
图5为根据本发明实施例的再一MEMS的部分剖视图。
图6为根据本发明实施例的其他MEMS的部分剖视图。
图7为根据本发明实施例的电声转换装置的示意图。
附图标记说明如下。在此，附图标记不应被理解为对权利要求的限制。
1、对电极；2、第一膜片；21、第一波纹；211、第一波峰；212、第一波谷；22、辐杆；3、第二膜片；31、第二波纹；311、第二波峰；312、第二波谷；4、腔体；5、平面；6、凸块；7、凹坑；8、支撑件。
 本发明的实施方式
本发明将参照附图进行说明。应注意的是，类似结构或功能的元件在整个图中用相同的附图标记表示。本文所描述的实施例并不打算作为对各种其它实施例的详尽说明或描述，也不打算作为对权利要求的范围或本领域普通技术人员根据本发明所描述的实施例显而易见的某些其它实施例的范围的限制。此外，图示的实施例不一定具有所示的所有方面或优点。
在本发明的描述中，需要理解的是，术语“第一”、“第二”等主要是用于区分不同的装置、元件或组成部分（具体的种类和构造可能相同也可能不同），并非用于表明或暗示所指示装置、元件或组成部分的相对重要性和数量。除非另有说明，“多个”的含义为两个或两个以上。
本文中对各种所述实施例的描述中所使用的术语仅用于描述特定的实施例，而无意作出限制。如在所描述的各种实施例和所附权利要求书中所使用的，单数形式“a”、“an”和“the”也意在包括复数形式，除非上下文另有明确指示。还应理解的是，本文中使用的术语“和/或”是指并包括一个或多个相关所列项目的任何及所有可能的组合。应进一步理解的是，本说明书中使用的术语“包括（includes）”、“包括（including）”、“包含（comprises）”和/或“包含（comprising）”指明了所述特征、整体、步骤、动作、元素和/或组件的存在，但并不排除存在或增加一个或多个其他特征、整体、步骤、动作、元素、组件和/或其组合。
参考图1和图2，给出了根据本发明的一些示例性实施例的微机电系统（MEMS）。该MEMS包括沿第一方向布置的多个对电极1、沿第二方向分别设置在对电极1相对两侧并气密连接的第一膜片2和第二膜片3。多个对电极1沿第三方向间隔设置，在相邻的对电极1之间还可设置支撑件8。支撑件8沿第二方向的一端与第一膜片2连接，支撑件8沿第二方向的另一端与第二膜片3连接。其中，第一方向被表述为圆周方向，第二方向被表述为竖直方向或厚度方向，第三方向被表述为径向或横向。
如图1至图6所示，在一些实施例中，第一膜片2以及第二膜片3均为波纹状导电膜片，第一波纹状导电膜片设有多个第一波纹21，第二波纹状导电膜片设有多个第二波纹31，多个第一波纹21和多个第二波纹31沿相同的方向设置。多个第一波纹21中的每一个包括第一波峰211和第一波谷212，即，多个第一波峰211和多个第一波谷212沿第三方向交替设置。类似地，多个第二波纹31中的每一个包括第二波峰311和第二波谷312，即，多个第二波峰311和多个第二波谷312沿第三方向交替设置。在本发明的附图中，第一波纹21的最外端是第一波峰211，第二波纹31的最外端是第二波谷312。当然，在其他实施例中，第一波纹21的最外端也可以是第一波谷212，第二波纹31的最外端可以相应地是第二波峰311。需要说明的是，图2至图6中的右边缘是微机电系统的边缘。
第一波峰211以及第二波谷312分别沿第二方向对齐，并且形成腔体4将相应的对电极1容纳在腔体4内。腔体4气密密封，腔体内部压力小于外部大气压。例如，腔体4处于真空状态。
至少部分或全部的第一波谷212分别与相应数量的第二波峰311对齐并相互直接接触（不存在支撑件），其余部分的第一波谷212与第二波峰311之间通过支撑件8相互连接。
第一波纹状导电膜片2以及第二波纹状导电膜片3可以由导电材料制成或者包括在其上提供了导电元件的一个绝缘膜。例如，第一波纹状导电膜片2以及第二波纹状导电膜片3包括一个氮化硅膜，其中多晶硅电极形成在膜片的面向对电极1的表面上或者形成在膜片的背向对电极1的表面上以提供导电。
在一些实施例中，支撑件8可以与第一波纹状导电膜片2或第二波纹状导电膜片3一体构造。或者，支撑件8可以与对电极1形成一体，然后形成狭槽以将支撑件8与对电极1分开。在一些实施例中，支撑件8也可以独立于第一波纹状导电膜片2和第二波纹状导电膜片3单独形成。或者，支撑件8可以独立于对电极1而形成，然后开槽将隔板8与对电极1分开。在一个示例中，在第一波纹状导电膜片2和第二波纹状导电膜片3组装在一起之后，在第一波谷212和第二波峰311之间形成支撑件8。
优选地，对电极1和支撑件8为圆弧状并且设置在跨度小于360度的同心弧上。第一波峰211、第一波谷212、第二波峰311以及第二波谷312均为圆弧状，并且设置在跨度小于360度的同心弧上。在一个示例中，第一波纹状导电膜片2和第二波纹状导电膜片3均为圆形。辐杆22非常窄并且每个狭槽、第一波峰211、第一波谷212、第二波峰311和第二波谷312跨越大致60度。即，第一波纹状导电膜片2在其圆周方向上被均分成六个部分。每个部分包括在第一波纹状导电膜片2的径向方向上交替设置的一组第一波峰211和第一波谷212。相邻部分通过沿第一波纹状导电膜片2的径向延伸的辐杆22来相互连接。
优选地，第一波谷212沿第一波纹状导电膜片2的径向方向均匀设置。
相应地，第二波纹状导电膜片3在其圆周方向上被均分成六个部分，每个部分包括沿第二波纹状导电膜片3的径向方向交替设置的一组第二波峰311和第二波谷312。相邻部分通过沿第二波纹状导电膜片3的径向延伸的辐杆22相互连接。
优选地，第二波谷312在第二波纹状导电膜片3的径向方向均匀设置。
对电极1和支撑件8在圆周方向上均分为六个部分，每个部分包括沿径向方向设置的一组同心圆弧状对电极1和支撑件8。相邻部分通过沿第一波纹状导电膜片2径向延伸的辐条22相互连接。圆弧状对电极1的相对的两端分别连接到对应的辐条，使得对电极1分别悬置在相邻的辐条之间。支撑件8通过狭槽与对电极1和辐条断开。
或者，对电极1、支撑件8、第一波纹状导电膜片2和第二波纹状导电膜片3可以被分成其他数量的部分，例如四部分或八部分等等。这些部分可以在MEMS的径向方向上均匀或不均匀地设置。在其他一些实施例中，支撑件8、第一波纹状导电膜片2和第二波纹状导电膜片3可以具有其他形状，例如方形、六边形、八边形等。
如图2至图6所示，当仅将位于第一波纹状导电膜片2以及第二波纹状导电膜片3的最外侧和次外侧的支撑件8移除时，第一波纹状导电膜片2的第一波谷212与第二波纹状导电膜片3的第二波峰311相互接触。即：沿第二方向上靠近第一膜片2边缘处的两个第一波谷212与相应的第二波峰311被设置为相互接触。由于高位移时，原本在位于最外侧或次外侧的支撑件周围的膜片角上的应力最大，因此，这种设计允许相应的波谷212和波峰311有更大的弯曲自由度，应力得到释放。
需要注意的是，第一膜片2可以设置一个带有圆角213的第一波峰，该波峰最靠近移除支撑件的第一波谷，和/或第二膜片3可以设置一个带有圆角313的第二波谷，该波谷最靠近移除支撑件的第二波峰，从而进一步释放应力。
如图2所示，当第一波谷212的底部和/或第二波峰311的顶部呈平面5形状时，第一波谷212和第二波峰311有可能相互粘连，而无法在较高的结构位移下分离。为防止出现这种现象，可提供以下各种解决方案，以减小第一波谷和相应的第二波峰之间的接触面积。
如图3至图5所示，通过提供抗粘结构/形状，如，凸块或凹坑，来减小波纹状导电膜片底部/顶部之间的接触面积，可以防止第一波谷212和第二波峰311因相互粘连而无法在高结构位移时分离。即：沿第二方向上，第一波谷212与第二波峰311相互接触部分的长度小于平面5的长度。
具体地，如图3和图4所示，在一些实施例中，可在第一膜片2上位于最外侧以及次外侧的第一波谷212底部设置一个或多个凸块6，和/或者，第二膜片3上位于最外侧以及次外侧的第二波峰311顶部设置一个或多个凸块6。凸块6沿第三方向上的长度小于第一波谷212底部以及第二波峰311顶部的平面5的长度。通过凸块6与第二波峰311顶部的平面5接触、凸块6与第一波谷212底部的平面5接触或者第一波谷212底部的平面5与第二波峰311顶部的平面5相互接触，可以降低波纹状导电膜底部处的接触面积，从而防止第一波谷212和第二波峰311因相互粘连而无法在高结构位移时分离。优选地，为了避免凸块6与第一波谷212或第二波峰311的平面5粘合在一起而增加应力，本一个示例中，凸块6为抗粘凸块。
具体地，如图5所示，在另一些实施例中，还可在第一膜片2上位于最外侧以及次外侧的第一波谷212底部设置一个或多个凹坑7，和/或者，第二膜片3上位于最外侧以及次外侧的第二波峰311顶部设置一个或多个凹坑7。凹坑7沿第三方向上的长度小于第一波谷212底部以及第二波峰311顶部的平面5的长度。通过第一波谷212底部除凹坑7以外的部分与第二波峰311顶部的平面5接触、第二波峰311顶部除凹坑7以外的部分与第一波谷212底部的平面5接触或者第一波谷212底部除凹坑7以外的部分与第二波峰311顶部除凹坑7以外的部分相互接触，可以降低波纹状导电膜底部处的接触面积，从而防止第一波谷212和第二波峰311因相互粘连而无法在高结构位移时分离。
具体地，如图6所示，在又一实施例中，第一波谷212的底部和第二波峰311的顶部均为平面5，为了防止第一波谷212和第二波峰311因相互粘连而无法在高结构位移时分离，压力接合所涉及的波纹可以彼此偏移一定的长度。即：第一波谷212的底部和/或者第二波峰311的顶部被设置为沿第三方向偏移第一距离，其中，第一距离小于平面5的长度。通过使第一波谷212和第二波峰311错位，可以以不同的方式减少共同的平面面积并降低潜在的粘连风险。
在其他实施例中，波纹的形状也可以被修改，以实现与抗粘滞结构类似的功能。这里，一个膜片的底部形状（即波峰/波谷的形状）是为了在没有支撑件8的情况下减少与另一膜片的顶部的接触表面，当实现底部波纹时，可以容易地实现圆顶形状。同样，它可以是单个圆顶形状或多个圆顶形状，这种形状也可以通过顶部膜片实现。
由于高压梯度迫使两个波纹在一起，两个波纹将在其各自的底部（波峰或波谷）有效地结合。然而，在冲击和跌落试验中表现出的高非线性弯曲期间，两个波纹可以在第二方向上自由移动并在第一方向以及第三方向上滑动，这消除了通过使用这种波纹状结构的装置的一部分使一种膜片形状与另一种膜片形状一致的需要。因此，膜片消除了额外弯曲的一个重要因素，该区域的应力最多可降低50%。
本发明的另一实施例还提供一种电声转换装置，如图7所示，包括上述的MEMS701，和与MEMS 701电连接的驱动电路702。电声转换装置700可以是MEMS麦克风或扬声器。
尽管参照一个或多个实施例对本发明进行了描述，但对实施例的上述描述仅用于使本领域技术人员能够实践或使用本发明。本领域技术人员应当理解，在不脱离本发明的精神或范围的情况下，可以进行各种修改。上面说明的实施例不应被解释为对本发明的限制，本发明的范围应参照后面的权利要求书来确定。

Claims (20)

  1. 一种微机电系统，其特征在于，包括：
    多个对电极，沿第一方向设置；
    第一膜片和第二膜片，分别位于所述多个对电极沿第二方向的相对两侧，并气密连接；
    其中，所述第一膜片设有多个第一波纹，所述多个第一波纹中的每一个包括第一波峰和第一波谷，多个第一波峰和多个第一波谷沿第三方向交替设置；
    第二膜片设有多个第二波纹，所述多个第二波纹中的每一个包括第二波峰和第二波谷，多个第二波峰和多个第二波谷沿所述第三方向交替设置；
    所述多个第一波峰与所述多个第二波谷分别对齐形成腔体，所述多个对电极分别设置在所述腔体内；以及
    所述多个第一波谷与所述多个第二波峰分别对齐，并且所述多个第一波谷中的至少部分与相应的第二波峰被设置为相互接触。
  2. 根据权利要求1所述的微机电系统，其特征在于，所述腔体气密密封，所述腔体的内部压力小于外部大气压。
  3. 根据权利要求2所述的微机电系统，其特征在于，所述腔体处于真空状态。
  4. 根据权利要求1所述的微机电系统，其特征在于，位于所述第一膜片最外圈和次外圈的第一波谷与位于所述第二膜片最外圈和次外圈的相应第二波峰直接接触。
  5. 根据权利要求4所述的微机电系统，其特征在于，所述第一波谷的底部和所述第二波峰的顶部设置为平面。
  6. 根据权利要求5所述的微机电系统，其特征在于，所述第一波谷与相应的第二波峰在所述第三方向上相互接触的区域的长度等于或小于所述第一波谷和所述相应的第二波峰的平面的长度。
  7. 根据权利要求5所述的微机电系统，其特征在于，所述第一膜片还包括一个或多个凸块，所述凸块设置在所述第一波谷底部并与所述第二波峰的顶部相接触。
  8. 根据权利要求7所述的微机电系统，其特征在于，所述凸块在所述第三方向上的长度等于或小于所述平面的长度。
  9. 根据权利要求8所述的微机电系统，其特征在于，所述凸块呈圆形或呈线形。
  10. 根据权利要求5所述的微机电系统，其特征在于，所述第二膜片还包括一个或多个凸块，所述凸块设置在所述第二波峰顶部并与所述第一波谷的底部相接触。
  11. 根据权利要求10所述的微机电系统，其特征在于，所述凸块在所述第三方向上的长度等于或小于所述平面的长度。
  12. 根据权利要求11所述的微机电系统，其特征在于，所述凸块是抗粘凸块或呈线状。
  13. 根据权利要求1所述的微机电系统，其特征在于，所述第一膜片还包括一个或多个凹坑，所述凹坑设置在所述第一波谷底部，所述第一波谷底部除所述凹坑以外的部分被配置为与所述第二波峰的顶部接触。
  14. 根据权利要求1所述的微机电系统，其特征在于，所述第二膜片还包括一个或多个凹坑，所述凹坑设置在所述第二波峰顶部，所述第二波峰顶部除所述凹坑以外的部分被配置为与所述第一波谷的底部接触。
  15. 根据权利要求5所述的微机电系统，其特征在于，所述第一波谷的底部和所述第二波峰的顶部被配置为沿第三方向偏移第一距离。
  16. 根据权利要求15所述的微机电系统，其特征在于，所述第一距离小于所述平面的长度。
  17. 根据权利要求15所述的微机电系统，其特征在于，所述第三方向为径向。
  18. 根据权利要求1所述的微机电系统，其特征在于，所述第一波峰的顶部或所述第二波谷的底部被设置成圆顶形状。
  19. 根据权利要求18所述的微机电系统，其特征在于，所述第一波峰的至少一个底部或所述第二波谷的至少一个顶部被配置成圆顶形状。
  20. 一种电声转换装置，其特征在于，包括如权利要求1至19中任一项所述的微机电系统，和与所述微机电系统电连接的驱动电路。
PCT/CN2024/074711 2024-01-04 2024-01-30 一种微机电系统及电声转换装置 Pending WO2025145481A1 (zh)

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CN114644317A (zh) * 2021-03-29 2022-06-21 瑞声声学科技(深圳)有限公司 微机电系统
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