WO2025124264A1 - 匀流固定部件、进气集成装置和半导体工艺设备 - Google Patents

匀流固定部件、进气集成装置和半导体工艺设备 Download PDF

Info

Publication number
WO2025124264A1
WO2025124264A1 PCT/CN2024/136983 CN2024136983W WO2025124264A1 WO 2025124264 A1 WO2025124264 A1 WO 2025124264A1 CN 2024136983 W CN2024136983 W CN 2024136983W WO 2025124264 A1 WO2025124264 A1 WO 2025124264A1
Authority
WO
WIPO (PCT)
Prior art keywords
component
flow
fixing
air intake
integrated device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/136983
Other languages
English (en)
French (fr)
Inventor
徐雪南
张军
黄首霖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of WO2025124264A1 publication Critical patent/WO2025124264A1/zh
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles

Definitions

  • the present application relates to the field of semiconductor technology, and in particular to a uniform flow fixing component, an air intake integrated device and semiconductor process equipment.
  • Semiconductor coating equipment is one of the equipment used in the chip production process, and CVD (Chemical Vapor Deposition) coating equipment is widely used in the semiconductor field of thin film deposition of metals, metal compounds, metal oxides, etc. due to its high film formation rate, good film uniformity, good density, and the ability to deposit thin films on the surface of complex structures or in deep pores.
  • CVD Chemical Vapor Deposition
  • CVD coating equipment includes an air intake integrated device, a vacuum reaction chamber, a substrate carrier device, and an exhaust integrated device.
  • the air intake integrated device transports a variety of plasma or heat-activated gas sources into the vacuum reaction chamber.
  • the various gas sources react chemically in an appropriate temperature and vacuum environment, and the products are deposited on the surface of the substrate on the substrate carrier device.
  • the remaining reaction gas sources and reaction by-products are discharged to the factory end for decomposition and treatment through the exhaust integrated device.
  • the embodiments of the present application provide a uniform flow fixing component, an air intake integrated device and semiconductor process equipment, which can effectively solve the problem of sealing ring failure caused by high heat source temperature.
  • the embodiment of the present application provides a uniform flow fixing component, which is applied to an air intake integrated device of a semiconductor process equipment, wherein the semiconductor process equipment includes a process chamber, and the air intake integrated device includes a heating component and a uniform flow component arranged in the process chamber;
  • the flow-uniform fixing component includes a sealing fitting part, an extension part and a fixing part which are arranged in sequence from top to bottom, wherein the sealing fitting part is fixedly connected to one end of the extension part, and the sealing fitting part is used for sealingly fitting with the process chamber; the fixing part is fixedly connected to the other end of the extension part, the upper surface of the fixing part is used for setting the heating component, and the lower surface of the fixing part is used for fixing with the flow-uniform component.
  • An embodiment of the present application also provides an air intake integrated device, which is applied to semiconductor process equipment.
  • the semiconductor process equipment includes a process chamber.
  • the air intake integrated device includes: a heating component and a flow equalizing component arranged in the process chamber, and the above-mentioned flow equalizing fixing component.
  • the embodiment of the present application also provides a semiconductor process equipment, including a process chamber and the above-mentioned gas intake integrated device;
  • the semiconductor process equipment further includes a seal disposed between the seal fitting portion and the process chamber.
  • the embodiments of the present application provide a uniform flow fixing component, an air intake integrated device and semiconductor process equipment.
  • the uniform flow fixing component is applied to the air intake integrated device of the semiconductor process equipment, so that the heat emitted by the heating component of the air intake integrated device passes through the fixing component, the extension part and the sealing matching part in sequence before reaching the sealing part between the sealing matching part and the process chamber, thereby extending the heat transfer path between the heat source and the sealing part, thereby reducing the influence of the heat source temperature on the sealing part, and further extending the service life of the sealing part while ensuring the sealing effect.
  • FIG1 is a schematic structural diagram of a CVD coating device provided by the related art
  • FIG2 is a schematic diagram of the structure of a semiconductor process equipment provided in an embodiment of the present application.
  • FIG3 is a schematic diagram of the structure of a flow-uniform fixing component provided in an embodiment of the present application.
  • FIG4 is a cross-sectional schematic diagram of a flow-uniform fixing component provided in an embodiment of the present application.
  • FIG5 is a schematic diagram of the structure of a ventilation tube provided in an embodiment of the present application.
  • FIG6 is a schematic diagram of the structure of a second insulating member and a temperature detection element provided in an embodiment of the present application
  • FIG7 is an enlarged schematic diagram of a partial structure of a second insulating member provided in an embodiment of the present application.
  • FIG8 is a test diagram of the ambient temperature near the sealing member when the temperature of the heating component provided in the embodiment of the present application is set to 450° C.;
  • FIG9 is a test diagram of the ambient temperature near the sealing member when the temperature of the heating component provided in the embodiment of the present application is set to 550° C.;
  • 300-flow equalizing component 310-flow equalizing plate; 320-annular fixing part;
  • the meaning of “multiple” is two or more than two, unless otherwise clearly and specifically defined.
  • the terms “upper”, “lower”, “inner”, “outer”, “front”, “back” and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.
  • FIG1 A commonly used CVD coating equipment in related technology is shown in FIG1 .
  • gas sources enter the channel 11a in the gas mixing unit 11 for gas mixing, they flow to the flow unit 15 below the back plate 13 of the flow unit, and are diffused and separated by the flow unit 15. Air flows through hundreds of small hole channels 15a on the flow unit 15 and reach the upper surface of the substrate 17 above the substrate supporting module 6.
  • the heating plate 12 in the air intake integrated module 5 works together with the substrate supporting module 6 to provide the thermal environment required for the gas source to undergo a chemical reaction, and a deposited thin film is formed on the substrate 17.
  • the process by-products are discharged to the factory end with the airflow in the exhaust integrated module 7 for subsequent processing.
  • the air intake integrated module 5 is installed on the cover plate 14 of the vacuum reaction chamber.
  • the vacuum reaction chamber also includes a chamber body 81.
  • a first sealing ring 14a is arranged between the back plate 13 of the uniform flow unit and the cover plate 14.
  • a second sealing ring 81a is arranged between the cover plate 14 and the chamber body 81.
  • the heating plate 12 is located directly above all the sealing boundaries inside the air intake integrated module (for example: the first sealing ring 14a and the second sealing ring 81a) and the sealing boundary of the chamber cover. The heat conduction and radiation paths are short.
  • the applicable temperature of the air intake integrated module used in the CVD coating equipment is below 205°C; if it is used in a high-temperature coating process, the sealing ring at the sealing boundary will age rapidly, resulting in sealing failure; at the same time, the service life of the sealing ring will be greatly shortened, resulting in frequent replacement and increased costs.
  • the embodiment of the present application discloses a flow-uniform fixing assembly, which is applied to the gas inlet integrated device 10 of the semiconductor process equipment to alleviate the above problem.
  • the semiconductor process equipment includes a process chamber 20, and the gas inlet integrated device 10 includes a heating component 200 and a flow-uniform component 300 arranged in the process chamber 20.
  • the heating component 200 can provide the required thermal environment for the process, and the flow-uniform component 300 can transport the process gas to the process chamber 20 more evenly to facilitate the process.
  • the embodiment of the present application can extend the heat transfer path between the heating component 200 and the sealing structure by designing the uniform flow fixing component 100, which can alleviate the problem of reduced service life or even failure of the sealing structure to a certain extent.
  • the disclosed flow-uniform fixing component 100 includes a sealing matching portion 110, an extension portion 120 and a fixing member 130 which are sequentially arranged from top to bottom, wherein the sealing matching portion 110 is fixedly connected to one end of the extension portion 120, and the sealing matching portion 110 is used to seal and match with the process chamber 20.
  • a sealing match with the process chamber 20 can be achieved to ensure the sealing between the entire flow-uniform fixing component 100 and the process chamber 20.
  • the fixing member 130 is fixedly connected to the other end of the extension portion 120, and the upper surface of the fixing member 130 is used to set the heating component 200, and the lower surface of the fixing member 130 is used to fix with the flow-uniform component 300, so that the fixing member 130 can not only carry the heating component 200, but also install the flow-uniform component 300.
  • the extension portion 120 may be a circular ring structure, and the sealing fitting portion 110 protrudes from the outer peripheral wall of the extension portion 120, and the sealing fitting portion 110 is also used to be fixed to the process chamber 20.
  • the sealing fitting portion 110 is sealed and fitted with the process chamber 20 while also being fixed to the process chamber 20, thereby, the sealing fitting and fixed connection between the entire flow-uniform fixing component 100 and the process chamber 20 can be achieved through the fixing of the sealing fitting portion 110 and the process chamber 20, so as to ensure the sealing and stability of the connection between the entire flow-uniform fixing component 100 and the process chamber 20, which is a typical one-item-for-multiple-purposes.
  • the sealing fitting portion 110 may also be a circular ring structure, wherein the axial dimension of the sealing fitting portion 110 is relatively small, while the axial dimension of the extension portion 120 is relatively large and larger than the axial dimension of the sealing fitting portion 110 .
  • sealing fitting portion 110 and the extension portion 120 are both circular ring structures. Of course, this is not restrictive. In some other embodiments not shown in the figures, the sealing fitting portion 110 and the extension portion 120 can each be other shapes, which are not specifically limited here.
  • the overall cross-section of the sealing mating portion 110 and the extension portion 120 may be L-shaped, but this is also not restrictive, and other shapes may also be used.
  • the sealing mating portion 110 and the extension portion 120 can be connected by welding, riveting, bonding, snapping, plugging, sleeve connection, etc. to facilitate manufacturing; in other embodiments, the sealing mating portion 110 and the extension portion 120 can also be an integrated structure to improve the overall strength.
  • the fixed connection between the extension portion 120 and the fixing member 130 can be in the form of welding, bonding, riveting, etc., so as to improve the firmness of the connection.
  • the fixing member 130 is a plate-like structure, which is arranged in the horizontal direction.
  • the upper surface of the fixing member 130 forms the upper surface of the fixing member 130
  • the lower surface of the fixing member 130 forms the lower surface of the fixing member 130.
  • the heating component 200 can be supported by the upper surface of the fixing member 130.
  • fasteners can also be provided to fix the heating component 200 to the fixing member 130.
  • the flow-uniform component 300 can also be fixed to the lower surface of the fixing member 130 by fasteners to ensure the stability of the flow-uniform component 300 above the carrying device 50.
  • the uniform flow fixing component 100 is applied to the air intake integrated device 10 of the semiconductor process equipment, and the sealing fitting part 110 and the process chamber 20 are sealed by the sealing member 30.
  • the heat emitted by the heating component 200 of the air intake integrated device 10 passes through the fixing member 130, the extension part 120 and the sealing fitting part 110 in sequence before reaching the sealing member 30 between the sealing fitting part 110 and the process chamber 20. That is to say, due to the existence of the extension part 120, the heat transfer path between the heat source and the sealing member 30 is extended, thereby reducing the influence of the heat source temperature on the sealing member 30, thereby extending the service life of the sealing member 30 and ensuring the sealing effect.
  • the greater the wall thickness of the extension portion 120 the greater the strength and the better the supporting performance; however, if the thickness is too large, on the one hand, it will increase the space occupied by the extension portion 120, which is not conducive to lightweight and miniaturization; on the other hand, it will also increase the upward heat transfer efficiency, that is, the heat transferred to the sealing boundary, and will reduce the volume of the space enclosed by the extension portion 120 and the fixing member 130, thereby reducing the space available for setting the heating component 200, resulting in a reduction in the size of the heating component 200 and reducing the heating efficiency and uniformity of the process gas.
  • the uniform flow fixing component 100 may also include a plurality of protrusions 140. As shown in FIG. 3, the plurality of protrusions 140 are arranged at intervals on the inner circumferential wall of the extension portion 120. In this way, through the arrangement of the plurality of protrusions 140, a plurality of regions of the extension portion 120 can be strengthened, so that even when the thickness of the extension portion 120 is relatively small, the strength of the extension portion 120 can still be ensured, thereby preventing it from being deformed randomly due to insufficient strength.
  • the flow-uniform fixing component 100 may include six protrusions 140, which are evenly arranged in the circumferential direction of the extension 120, so that the strength of each region of the extension 120 can be relatively balanced to prevent the occurrence of weak parts.
  • the protrusions 140 can also be other numbers and other arrangements, which are not specifically limited here.
  • part of the material of the convex portion 140 can be removed to reduce the mass of the convex portion 140, thereby reducing the mass of the entire uniform flow fixing component 100, and saving materials.
  • the convex portion 140 can be provided with a through hole or a blind hole 141 to reduce the mass of the convex portion 140, save materials and reduce upward heat transfer.
  • each convex portion 140, the sealing mating portion 110 and the extension portion 120 can be integrally formed, and this manufacturing method can reduce the manufacturing difficulty, shorten the manufacturing cycle, and also ensure the overall strength.
  • the integral forming can be achieved by casting, forging, machining, etc. Of course, other methods can also be used, which are not limited here.
  • the thermal conductivity of the extension portion 120 may be lower than the thermal conductivity of the fixing member 130. This design approach may help reduce the amount of heat transferred through the extension portion 120 and, to a certain extent, reduce the total amount of heat transferred to the seal 30.
  • the extension portion 120 can be made of Hastelloy C22, which has a thermal conductivity of 9.4-17.5w/m*k
  • the fixing member 130 can be made of Ni-200, which has a thermal conductivity of 70w/m*k.
  • the extension portion 120 and the fixing member 130 can each be made of other materials, which are not specifically limited here.
  • both can be Hastelloy C22; and the material of the flow-uniform component 300 can be the same as that of the fixing member 130, both are Ni-200.
  • the embodiment of the present application can extend the distance between the heating component 200 and the seal 30 through the design of the uniform flow fixing component 100, and by reducing the wall thickness of the extension part 120 and selecting a material with relatively low thermal conductivity, the total amount of heat transferred to the seal 30 can be reduced.
  • the outer wall of the sealing matching part 110 can be provided with a plurality of arc grooves, which can be used to assemble with other components (such as the annular heat insulation member 430 described below) to achieve positioning.
  • the sealing matching part 110 can also be provided with a plurality of threaded holes to facilitate fixing with the isolation member 600 described below.
  • the sealing matching part 110 can also be provided with a plurality of reserved holes.
  • the fixing member 130 can also be provided with a threaded hole to facilitate fixed connection with the heating component 200.
  • the embodiment of the present application also discloses an air intake integrated device 10, which is applied to semiconductor process equipment.
  • the semiconductor process equipment includes a process chamber 20, and the air intake integrated device 10 is arranged in the process chamber 20, so as to facilitate the delivery of process gas into the process chamber 20 through the uniform flow component 300.
  • the heating component 200 can also provide a thermal environment for the process carried out in the process chamber 20.
  • the disclosed air intake integrated device 10 includes a heating component 200, a uniform flow component 300 and the above-mentioned uniform flow fixing component 100, wherein the heating component 200 and the uniform flow component 300 are both arranged in the process chamber 20 and fixed by the uniform flow fixing component 100.
  • the flow-uniform component 300 may include a flow-uniform plate 310 and an annular fixing portion 320, wherein the annular fixing portion 320 is disposed at the edge of the flow-uniform plate 310, and the flow-uniform plate 310 is fixed to the flow-uniform fixing component 100 by connecting with the fixing member 130.
  • the flow-uniform component 300 may be installed to the flow-uniform fixing component 100 by connecting the annular fixing portion 320 with the fixing member 130 to ensure the stability of the flow-uniform component 300.
  • the annular fixing portion 320 may be installed to the lower surface of the fixing member 130 by using a fastener.
  • the flow uniforming plate 310 may be provided with a plurality of pores, through which the process gas is introduced into the process chamber 20, thereby expanding the diffusion area of the process gas in the process chamber 20, which is beneficial to improving the uniformity of contact between the process gas and the surface of the substrate carried by the carrying device 50 located under the flow uniforming component 300, and further beneficial to improving the product yield.
  • the upper surface of the flow plate 310 is spaced apart from the lower surface of the fixing member 130.
  • one end of the annular fixing portion 320 may be provided with an annular tube of a certain length, which is connected to the flow plate 310. In this way, the lower surface of the fixing member 130, the upper surface of the flow plate 310 and the inner wall of the annular tube together form a gas space.
  • the process gas Before the process gas enters the multiple pores, it first enters the gas space and is fully diffused in the gas space, so that the process gas can pass into the process chamber 20 through each pore, thereby allowing the process gas to be fully diffused before entering the process chamber 20, which is beneficial to improving the uniformity and diffusion efficiency of the gas diffusion in the process chamber 20. That is to say, in the embodiment shown in FIG. 2 , since the fixing member 130 adopts a plate-like structure, the fixing member 130, while carrying the heating member 200 and the flow uniforming member 300, also forms a gas space for process gas diffusion together with the flow uniforming plate 310 and the annular fixing portion 320. While ensuring the process gas diffusion effect, the structure of the flow uniforming member 300 is simplified, which is a typical case of a one-piece multi-purpose.
  • the gas inlet integrated device 10 may further include a gas delivery pipeline, which passes through the heating component 200 and the fixing component 130 in sequence, and may extend to the gas space and be connected, so as to facilitate the delivery of the process gas to the gas space.
  • a gas mixing component may also be provided at the inlet of the gas delivery pipeline, so that when it is necessary to deliver a mixed gas of multiple process gases to the process chamber 20, the multiple process gases may be delivered to the gas mixing component via the upstream gas path for mixing, and then the mixed gas is introduced into the gas space through the gas delivery pipeline for diffusion, and finally introduced into the process chamber 20 through multiple air holes for reaction, so as to meet the process requirements.
  • the intake integration device 10 may also include a first spacer 410. As shown in FIG. 2, the first spacer 410 is arranged between the heating component 200 and the fixing member 130. In this way, the heating component 200 and the fixing member 130 are separated by the first spacer 410, thereby alleviating the problem of adhesion between the heating component 200 and the fixing member 130 due to long-term high temperature.
  • the first spacer 410 may be a spacer plate, a spacer layer, etc., such as a ceramic plate, a ceramic layer, etc. Of course, it may also be other materials and shapes, which are not specifically limited here.
  • the intake integrated device 10 may also include a second spacer 420. As shown in FIG2 , the second spacer 420 is arranged between the uniform flow component 300 and the fixing part 130. In this way, the uniform flow component 300 is separated from the fixing part 130 by the second spacer 420, which can effectively alleviate the problem of adhesion between the uniform flow component 300 and the fixing part 130 due to long-term high temperature, thereby reducing maintenance costs.
  • the uniform flow component 300 and the fixing part 130 are made of the same material, such as Ni-200, adhesion is likely to occur at high temperatures, and the second spacer 420 can effectively alleviate the problem of adhesion.
  • the second spacer 420 may be a heat-insulating ring disposed between the annular fixing portion 320 and the fixing member 130 , such as a thin ceramic ring or a thin Hastelloy C22 ring, etc.
  • a thin ceramic ring or a thin Hastelloy C22 ring etc.
  • it may also be made of other materials and shapes, which are not specifically limited here.
  • the air intake integrated device 10 may further include a temperature monitoring component 500, as shown in FIG2 , which passes through the heating component 200 (the portion of the temperature monitoring component 500 passing through the heating component 200 in FIG2 is not shown), and is opposite to the fixing member 130, and is used to monitor the temperature of the fixing member 130. Based on this configuration, the temperature of the fixing member 130 can be monitored in real time through the temperature monitoring component 500, so as to provide a data basis for temperature control.
  • the temperature monitoring component 500 can be inserted into the intake integration device 10 from top to bottom. In addition to passing through the heating component 200, it also passes through the above-mentioned first spacer 410 and the isolation component 600 described below, etc., to ensure that the detection end of the temperature monitoring component 500 can be opposite to the fixing component 130.
  • the upper surface of the fixing member 130 facing the heating member 200 may be provided with a blind hole, and at least a portion of the detection terminal of the temperature monitoring member 500 is inserted into the blind hole.
  • the blind hole limits the detection terminal, and on the other hand, the detection terminal can directly detect the bottom wall of the blind hole, and the bottom wall of the blind hole is closer to the flow-distributing member 300, thereby ensuring the detection accuracy.
  • the detection terminal of the temperature monitoring member 500 can also be opposite to the upper surface of the fixing member 130 to directly detect the temperature of the upper surface.
  • the temperature monitoring component 500 may be a temperature sensor. Of course, it may also be other components, which are not specifically limited here.
  • the heating component 200 will transfer heat to the uniform flow fixing component 100, causing the uniform flow fixing component 100 to heat up, and when the air intake integrated device 10 is installed in the process chamber 20, the fixing part 130 and the extension part 120 of the uniform flow fixing component 100 can both be located inside the process chamber 20, so that the side wall of the process chamber 20 can be used to block the fixing part 130 and the extension part 120 from dissipating heat to the outside; and the sealing mating part 110 can be located outside the process chamber 20.
  • the air intake integrated device 10 may further include an annular heat insulating member 430, as shown in FIG2 , the annular heat insulating member 430 is arranged around the sealing mating part 110, that is, the annular heat insulating member 430 covers the outer peripheral wall and part of the upper surface of the sealing mating part 110. Based on this, the sealing mating part 110 can be surrounded inside by the annular heat insulating member 430, so that the sealing mating part 110 can be effectively isolated from dissipating heat outward.
  • a chamber cover 22 may be provided on the top of the process chamber 20, the chamber cover 22 may be detachably mounted to the top of the process chamber 20, and the flow-uniform fixing component 100 may be mounted to the chamber cover 22.
  • the process chamber 20 includes: a base 21 and a chamber cover 22, the chamber cover 22 may be detachably mounted to the top of the base 21, and the flow-uniform fixing component 100 may be mounted to the chamber cover 22.
  • the lower surface of the sealing fitting part 110 can overlap the upper surface of the chamber cover 22 and be sealed by the sealing member 30, and the cross-section of the annular thermal insulation member 430 can be an L-shaped structure.
  • the sealing fitting part 110 can be located in the inner space of the L-shaped structure, and the annular thermal insulation member 430 can be installed to the upper surface of the chamber cover 22.
  • the outer peripheral wall, upper surface, and lower surface of the sealing fitting part 110 can be wrapped by the annular thermal insulation member 430 and the upper surface of the chamber cover 22, which can achieve both the limitation of the sealing fitting part 110 and thermal insulation.
  • the annular heat insulating member 430 may be made of ceramic, which has a good heat insulating effect. Of course, it may also be made of other materials, which is not specifically limited here.
  • the air intake integrated device 10 may further include an isolation member 600. As shown in FIG. 2 , the isolation member 600 is disposed on the sealing mating portion 110 and is fixedly connected to the sealing mating portion 110. The isolation member 600 may be used to shield the opening of the flow-uniform fixing component 100 at one end of the sealing mating portion 110.
  • the heating component 200 is located inside the uniform flow fixing component 100, and the detection end of the temperature monitoring component 500 is located inside the uniform flow fixing component 100
  • an overheat switch can be provided inside the uniform flow fixing component 100 to effectively prevent the temperature of the fixing component 130 from being too high.
  • the above-mentioned components such as the heating component 200, the temperature monitoring component 500, and the overheat switch all need to be powered or signal transmitted, and cables need to be provided. Therefore, the isolation component 600 can be provided with a plurality of avoidance holes to facilitate the passage of cables.
  • the isolation member 600 may be a plate, and its material may be aluminum alloy. Of course, the isolation member 600 may also be in other shapes and made of other materials, which are not specifically limited here.
  • the air intake integrated device 10 may further include a temperature control component 700.
  • the temperature control component 700 is disposed on the annular heat insulating component 430.
  • the temperature control component 700 may cool the components surrounding it to prevent the heat diffused from the heating component 200 through the uniform flow fixing component 100 from adversely affecting components such as the seal 30 and cables.
  • the temperature regulating component needs to be set close to the sealing boundary. Since the uniform flow unit 15 is relatively close to the sealing boundary, the additional temperature regulating component will inevitably be close to the uniform flow unit 15. When local cooling measures are taken, the temperature of the area close to the temperature regulating component of the uniform flow unit 15 will be lower, while the temperature of the area far from the temperature regulating component will be higher, which will easily make the temperature uniformity of the uniform flow unit 15 worse, resulting in the adhesion of condensed particles in the uniform flow orifice channel, thereby making the film formation uniformity worse.
  • the sealing boundary (at the position of the seal 30) formed by the sealing matching part 110 and the chamber cover 22 and the uniform flow component 300 are separated by an extension part 120, so that the distance between the sealing boundary and the uniform flow component 300 is far enough, so the above-mentioned temperature regulating component 700 can be provided without affecting the temperature uniformity of the uniform flow component 300.
  • the temperature control component 700 may include a vent pipe 710, the first end of the vent pipe 710 is used for air intake, the second end of the vent pipe 710 is closed, and the height of the first end of the vent pipe 710 is higher than the height of the second end of the vent pipe 710.
  • a plurality of air outlets are provided on the vent pipe 710, so that the cooling gas supplied from the outside can be received through the first end of the vent pipe 710 and discharged through the plurality of air outlets during the process of flowing toward the second end, thereby cooling the surrounding components (such as the seal 30, cables, etc.) to avoid the surrounding components from having their service life reduced or even failing due to the heat diffused by the uniform flow fixing component 100.
  • the ventilation pipe 710 can be used to dissipate cooling gas to reduce the temperature of the environment in which the seal 30 and the cable are located, which is beneficial to extending the service life of the seal 30 and the cable; in addition, the cooling gas flows from a high position to a low position along the ventilation pipe 710, and the low position end is closed, so that the cooling gas is finally discharged through the air outlet to achieve a cooling effect on the seal 30 and the cable.
  • the vent pipe 710 may be a ring-shaped tube, and a plurality of air outlet holes may be evenly arranged along the circumference of the ring-shaped tube, so that the cooling gas may be evenly discharged along the circumferential direction, and the seal 30 and the cable may be evenly cooled in the circumferential direction.
  • the temperature regulating component 700 may further include a plurality of vent pipes 710.
  • the plurality of vent pipes 710 are arranged side by side to expand the discharge area of the cooling gas, thereby increasing the cooling area to improve the cooling effect.
  • the vent pipe 710 is an annular pipe
  • the plurality of vent pipes 710 may also be nested.
  • the vent pipe 710 may also be in other shapes, and the plurality of vent pipes 710 may also be arranged in other ways, which are not specifically limited here.
  • the aperture of the air outlet can be adjusted according to the set temperature of the heating component 200 in actual working conditions. For example, when the set temperature is high, the aperture can be increased, and when the set temperature is low, the aperture can be reduced. For example, when the set temperature of the heating component 200 is 450° C., the aperture of the air outlet can be 1.5 mm.
  • the set temperature of the heating component 200 is 450° C.
  • the aperture of the air outlet can be 1.5 mm.
  • other corresponding relationships can also be used, which are not specifically limited here.
  • the embodiment of the present application further discloses a semiconductor process equipment, which may be a CVD coating equipment. Of course, it may also be other equipment, which is not specifically limited here.
  • the disclosed semiconductor process equipment includes a process chamber 20 and the above-mentioned gas inlet integrated device 10.
  • the semiconductor process equipment may further include a seal 30, which is disposed between the seal fitting portion 110 and the process chamber 20 to seal the seal fitting portion 110 and the process chamber 20.
  • the process chamber 20 includes: a base 21 and a chamber cover 22.
  • the sealing member 30 may be disposed between the sealing mating portion 110 and the chamber cover 22 of the process chamber 20 to perform a sealing function.
  • the coating of some metal films requires the process gas to be plasmatized and a chemical reaction to occur in a high temperature environment (for example, above 400°C) to deposit a thin film. Therefore, if the gas intake integrated device 10 of the above-mentioned semiconductor process equipment is applied to the coating of such metal films (for example, titanium), the materials of the gas mixing component, the uniform flow fixing component 100, and the uniform flow component 300 must all be made of conductive materials.
  • the semiconductor process equipment may also include: a feeding device 40, a supporting device 50, an exhaust integrated device and other structures.
  • the RF feeding device 40 is electrically connected to the gas mixing component to feed RF energy into the gas mixing component; the gas mixing component, the uniform flow fixing component 100 and the uniform flow component 300 form a whole that is used as an upper electrode.
  • RF energy is fed into the air intake integrated device 10 via the RF feeding device 40. Specifically, the RF energy is sequentially transmitted to the gas mixing component, the uniform flow fixing component 100, and the uniform flow component 300, so that the metal components inside the air intake integrated device 10 are all equipped with RF energy.
  • the air intake integrated device 10 in the semiconductor process equipment including the air intake integrated device 10, can be used as an upper electrode, and the supporting device 50 can be used as a lower electrode, thereby providing a plasma environment required for the process reaction.
  • the gas passing through the uniform flow component 300 is plasmatized under the joint action of the upper electrode and the lower electrode, a chemical reaction occurs in a high temperature environment above 400°C, and a thin film is deposited on the upper surface of the substrate.
  • the remaining process gas and by-products are discharged from the exhaust integrated device to the factory service end for subsequent decomposition treatment.
  • the carrier 50 is installed on the base 21 of the process chamber 20 and is grounded via a lower adapter.
  • the base 21 of the process chamber 20 is also grounded.
  • the process chamber 20 may further include an insulating component 800, as shown in FIG2 , wherein the flow-uniform fixing component 100 and the flow-uniform component 300 form a flow-uniform structure, and the insulating component 800 is disposed between the flow-uniform structure and the chamber cover 22.
  • the insulating component 800 By disposing the insulating component 800, RF and temperature energy losses can be reduced.
  • the insulating component 800 is only disposed between the flow-uniform structure and the chamber cover 22, but this is not restrictive. In some other embodiments not shown in the figure, the insulating component 800 may also be only disposed between the flow-uniform structure and the substrate 21; and in some other embodiments not shown in the figure, the insulating component 800 may also be simultaneously disposed between the flow-uniform structure and the substrate 21 and the chamber cover 22. Without violating the inventive concept and technical principles of the present application, the above situations are all within the protection scope of the present application.
  • the insulating component 800 may include a first insulating component 810 and a second insulating component 820 arranged from top to bottom, and the first insulating component 810 and the second insulating component 820 are both used to be fixed to the inner surface of the process chamber 20, wherein the upper surface of the first insulating component 810 is fixed to the lower surface of the sealing mating part 110, and the lower surface of the second insulating component 820 is arranged flush with the lower surface of the flow-uniform component 300.
  • the extension part 120 and the fixing component 130 can be wrapped to reduce the diffusion of heat to the surroundings, thereby achieving a heat insulation effect; in addition, through the cooperation of the first insulating component 810 and the second insulating component 820, some metal devices with radio frequency energy can also be wrapped, thereby reducing the loss of radio frequency energy.
  • the cross section of the first insulating member 810 may be L-shaped, wherein one inner side surface of the L-shaped portion is fixedly connected to the upper surface of the chamber cover 22 of the process chamber 20, and the other inner side surface of the L-shaped portion contacts the inner wall of the chamber cover 22.
  • the lower surface of the sealing mating portion 110 overlaps the upper surface of the first insulating member 810, and the sealing member 30 is located between the sealing mating portion 110 and the first insulating member 810 to play a role in sealing and insulating the process chamber 20.
  • a sealing member 30 may also be provided between the first insulating member 810 and the chamber cover 22 to play a role in sealing and insulating.
  • the dielectric constant of the second insulating member 820 can be smaller than the dielectric constant of the first insulating member 810, so that the insulation effect of the second insulating member 820 is better than the insulation effect of the first insulating member 810, so as to better reduce the RF energy loss.
  • the thermal conductivity of the second insulating component 820 can be smaller than the thermal conductivity of the first insulating component 810, so that the thermal insulation performance of the second insulating component 820 is better than the thermal insulation performance of the first insulating component 810, which can help reduce the temperature energy loss of components such as the heating component 200 and the flow equalizing component 300.
  • the lower surface of the second insulating member 820 is flush with the lower surface of the uniform flow component 300. On the one hand, it can prevent the lower surface of the second insulating member 820 from being located below the lower surface of the uniform flow component 300 and hindering the process gas from entering the process chamber 20 through the uniform flow component 300, thereby affecting the diffusion of the process gas in the process chamber 20.
  • the lower surface of the second insulating member 820 is located below the lower surface of the uniform flow component 300, that is, a portion of the inner side wall of the second insulating member 820 will protrude from the lower surface of the uniform flow plate 310, Thus, the gas flowing along the lower surface of the flow plate 310 is blocked from diffusing to the surroundings; on the other hand, the lower surface of the second insulating member 820 can be prevented from being located above the lower surface of the flow equalizing component 300 and reducing the heat insulation effect on the flow equalizing component 300.
  • the flush setting can not only ensure that the process gas is fully diffused in the process chamber 20 without obstruction, but also reduce temperature energy loss.
  • the semiconductor process equipment may further include an auxiliary heating component 900, as shown in FIG6 and FIG7.
  • the auxiliary heating component 900 is arranged around the uniform flow component 300, and can increase the temperature of the peripheral portion of the uniform flow component 300 by heat radiation, thereby offsetting a part of the heat loss and making the temperature around the uniform flow component 300 more uniform.
  • the auxiliary heating component 900 may include an annular heater 910 to heat a circle of the uniform flow component 300 to improve the temperature uniformity of the uniform flow component 300. Of course, it may also be in other shapes, which are not specifically limited here.
  • the auxiliary heating member 900 may be disposed on the second insulating member 820 to achieve installation of the auxiliary heating member 900 .
  • the second insulating member 820 may include a member body 821 and an annular protrusion 822, wherein the annular protrusion 822 is disposed on the outside of the member body 821, and at least part of the outer surface of the member body 821 is used to be fixed to the inner surface of the process chamber 20.
  • the member body 821 can be assembled with the process chamber 20. Exemplarily, as shown in FIG. 2, the member body 821 is assembled on the chamber cover 22.
  • the annular protrusion 822 may be provided with an annular groove 8221, an annular cover 8222 is provided at the opening position of the annular groove 8221, a plurality of brackets 8223 are provided between the annular groove 8221 and the annular cover 8222, the annular heater 910 is provided between the annular groove 8221 and the annular cover 8222, and the brackets 8223 are used to support the annular heater 910.
  • the annular groove 8221 can provide a storage space for the annular heater 910, and the annular cover 8222 can limit and insulate the annular heater 910 to prevent the annular heater 910 from being separated from the annular groove 8221 and the heat from being dissipated outward;
  • the plurality of brackets 8223 can support and limit the annular heater 910 to ensure that the annular heater 910 does not move arbitrarily between the annular groove 8221 and the annular cover 8222.
  • the brackets 8223 can be stainless steel brackets.
  • the inner walls of the annular cover 8222 and the annular groove 8221 are both loosely matched with the annular heater 910, that is, the inner walls of the annular cover 8222 and the annular groove 8221 are not in contact with the annular heater 910, but only in contact with the bracket 8223, thereby reducing the heat conduction efficiency and increasing the temperature around the uniform flow component 300 by heat radiation, thereby improving the overall uniformity.
  • a plurality of grooves may be provided on the outer wall of the second insulating member 820 to reduce the contact area between the second insulating member 820 and the chamber cover 22, thereby reducing heat transfer to the chamber cover 22 and reducing heat loss.
  • the semiconductor device may further include a temperature detection element 1010, as shown in Figures 1 and 6, the detection end of the temperature detection element 1010 extends to the vicinity of the annular heater 910 to detect the temperature of the annular heater 910 in real time to prevent overheating.
  • the heating component 200 is set to control the temperature at 450°C and 550°C respectively, the ventilation pipe 710 is air-cooled and the wall thickness of the extension 120 of the uniform flow fixing component 100 is 2 mm.
  • the set temperature of the heating component 200 is 450°C and 550°C respectively
  • the ambient temperature near the seal 30 is shown in FIG8 and FIG9 respectively. It can be concluded from FIG8 and FIG9 that when the set temperature of the heating component 200 is 450°C, the ambient temperature near the seal 30 is 110°C; when the set temperature of the heating component 200 is 550°C, the ambient temperature near the seal 30 is 180°C.
  • the ambient temperature near the seal 30 is significantly lower than the set temperature of the heating component 200, which can reduce the impact of high temperature on the seal 30 and extend the service life of the seal 30.
  • the process gas sources A, B, and C enter the gas mixing channel of the gas mixing component from the upstream gas path of the gas intake integrated device 10, and after being fully mixed, enter the upper space of the uniform flow component 300. With the gas pressure, they pass through hundreds of through holes on the uniform flow component 300 and reach the upper surface of the substrate of the supporting device 50.
  • the gas source is plasmatized to undergo a chemical reaction in a high-temperature environment above 400°C, and a thin film is deposited on the upper surface of the substrate. The remaining process gas and by-products are discharged from the exhaust integrated device to the plant end for subsequent decomposition treatment.
  • the heat emitted by the heating component 200 of the air intake integrated device 10 can pass through the fixing part 130, the extension part 120 and the sealing fitting part 110 before reaching the seal 30 formed by the sealing fitting part 110 and the process chamber 20, thereby extending the heat transfer path between the heat source and the seal 30, thereby reducing the influence of the heat source temperature on the seal 30, thereby extending the service life of the seal 30 and ensuring the sealing effect.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Fuel-Injection Apparatus (AREA)

Abstract

本申请公开了一种匀流固定部件、进气集成装置和半导体设备，涉及半导体技术领域。一种匀流固定部件，应用于半导体设备的进气集成装置，所述半导体设备包括工艺腔室，所述进气集成装置包括设置在所述工艺腔室中的加热部件和匀流部件；所述匀流固定部件包括自上而下依次设置的密封配合部、延长部以及固定件，其中，所述密封配合部与所述延长部的一端固定连接，所述密封配合部用于与所述工艺腔室密封配合；所述固定件与所述延长部的另一端固定连接，所述固定件的上表面用于设置所述加热部件，所述固定件的下表面用于与所述匀流部件固定。本申请能够解决热源温度较高导致密封圈失效等问题。

Description

匀流固定部件、进气集成装置和半导体工艺设备 技术领域
本申请涉及半导体技术领域，尤其涉及一种匀流固定部件、进气集成装置和半导体工艺设备。
背景技术
半导体镀膜设备是芯片生产过程中使用的设备之一，而CVD(Chemical Vapor Deposition，化学气相沉积法)镀膜设备又因成膜速率高、薄膜均匀性好、致密性好，以及可以在复杂结构的表面上或深层孔洞内沉积薄膜，被广泛地应用在金属、金属化合物和金属氧化物等薄膜沉积半导体领域中。
CVD镀膜设备包括进气集成装置、真空反应腔室、基材承载装置、抽气集成装置。利用化学气相沉积原理，由进气集成装置向真空反应腔室内输送多种等离子体化或加热活化的气体源，多种气体源在适当的温度和真空环境内发生化学反应，并使生成物沉积在基材承载装置上的基材表面，反应剩余气体源及反应副产物随抽气集成装置排出到厂务端分解处理。
对于CVD镀膜设备而言，为其进气集成装置中的匀流部件提供均匀性好、稳定性高的热源，是影响薄膜均匀性良好的关键因素；但是热源温度如若过高，会严重影响进气集成装置与真空反应腔室的密封边界，使得密封边界的密封圈快速老化，导致密封失效，同时大幅缩短密封圈的使用寿命。
发明内容
本申请的实施例提供一种匀流固定部件、进气集成装置和半导体工艺设备，可以有效解决热源温度较高导致密封圈失效等问题。
为达到上述目的，本申请的实施例采用如下技术方案：
本申请实施例提供了一种匀流固定部件，应用于半导体工艺设备的进气集成装置，所述半导体工艺设备包括工艺腔室，所述进气集成装置包括设置在所述工艺腔室中的加热部件和匀流部件；
所述匀流固定部件包括自上而下依次设置的密封配合部、延长部以及固定件，其中，所述密封配合部与所述延长部的一端固定连接，所述密封配合部用于与所述工艺腔室密封配合；所述固定件与所述延长部的另一端固定连接，所述固定件的上表面用于设置所述加热部件，所述固定件的下表面用于与所述匀流部件固定。
本申请实施例还提供了一种进气集成装置，应用于半导体工艺设备，所述半导体工艺设备包括工艺腔室，所述进气集成装置包括：设置在所述工艺腔室中的加热部件和匀流部件、以及上述匀流固定部件。
本申请实施例还提供了一种半导体工艺设备，包括工艺腔室和上述进气集成装置；
所述半导体工艺设备还包括密封件，所述密封件设置在所述密封配合部与所述工艺腔室之间。
本申请实施例提供了一种匀流固定部件、进气集成装置和半导体工艺设备，将该匀流固定部件应用于半导体工艺设备的进气集成装置中，使得进气集成装置的加热部件散发的热量，依次经过固定件、延长部和密封配合部，才能到达密封配合部与工艺腔室之间的密封件，延长了热源与密封件之间的热量传递路径，从而可以降低热源温度对于密封件的影响，进而可以延长密封件的使用寿命，同时保证密封效果。
上述说明仅是本申请技术方案的概述，为了能够更清楚了解本申请的技术手段，而可依照说明书的内容予以实施，并且为了让本申请的上述和其它目的、特征和优点能够更明显易懂，以下特举本申请的具体实施方式。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为相关技术提供的一种CVD镀膜设备的结构示意图；
图2为本申请实施例提供的半导体工艺设备的结构示意图；
图3为本申请实施例提供的匀流固定部件的结构示意图；
图4为本申请实施例提供的匀流固定部件的截面示意图；
图5为本申请实施例提供的通气管的结构示意图；
图6为本申请实施例提供的第二绝缘件与温度检测元件的结构示意图；
图7为本申请实施例提供的第二绝缘件的部分结构的放大示意图；
图8为本申请实施例提供的加热部件设定控温为450℃时密封件附近的环境温度测试图；
图9为本申请实施例提供的加热部件设定控温为550℃时密封件附近的环境温度测试图；
附图标记说明：
10-进气集成装置；
100-匀流固定部件；110-密封配合部；120-延长部；130-固定件；140-凸部；141-通孔或者盲孔；
200-加热部件；
300-匀流部件；310-匀流板；320-环形固定部；
410-第一间隔件；420-第二间隔件；430-环形隔热件；
500-温度监控部件；
600-隔离件；
700-调温部件；710-通气管；
800-绝缘部件；810-第一绝缘件；820-第二绝缘件；821-件本体；822-环凸部；8221-环形凹槽；8222-环形盖；8223-支架；
900-辅助加热部件；910-环形加热器；
1010-温度检测元件；
20-工艺腔室；21-基体；22-腔室盖；
30-密封件；
40-射频馈入装置；
50-承载装置。
具体实施方式
为使本申请的目的、技术方案和优点更加清楚，下面将结合本申请具体实施例及相应的附图对本申请技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的实施例中，采用“第一”、“第二”等字样对功能和作用基本相同的相同项或相似项进行区分，仅为了清楚描述本申请实施例的技术方案，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。
在本申请的实施例中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。在本申请的描述中，需要理解的是，术语“上”、“下”、“内”、“外”、“正面”、“背面”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
相关技术常用的CVD镀膜设备如图1所示，多种工艺气源进入到混气单元11内的通道11a混气后，流向匀流单元背板13下方的匀流单元15，经由匀流单元15进行扩散分气，匀流单元15上的数百个小孔通道15a均有气流穿过，抵达基材承载模块6上方的基材17的上表面，进气集成模块5中的加热板12与基材承载模块6共同作用，提供气源发生化学反应所需的热环境，在基材17上形成沉积薄膜，工艺副产物随抽气集成模块7中的气流排出到厂务端进行后续处理。
参考图1所示，进气集成模块5安装在真空反应腔室的盖板14上，真空反应腔室还包括腔室本体81，匀流单元背板13和盖板14之间设置第一密封圈14a，盖板14和腔室本体81之间设置第二密封圈81a，加热板12处于进气集成模块内部所有密封边界(例如：第一密封圈14a和第二密封圈81a)及腔室盖板密封边界的正上方，热量传导、辐射路径较短，由于密封圈合理使用工况的温度限制，该CVD镀膜设备采用的进气集成模块的适用温度为205℃以下；若将其用于高温镀膜工艺，会使得密封边界的密封圈快速老化，导致密封失效；同时大幅缩短密封圈的使用寿命，从而导致频繁更换增加成本。
参考图2至图9，基于上述情况，本申请实施例公开了一种匀流固定组件，应用于半导体工艺设备的进气集成装置10，以缓解上述问题。其中，半导体工艺设备包括工艺腔室20，进气集成装置10包括设置在工艺腔室20中的加热部件200和匀流部件300，通过加热部件200可以为工艺过程提供所需的热环境，通过匀流部件300可以将工艺气体较为均匀地输送至工艺腔室20内，以便于进行工艺过程。
考虑到加热部件200在工作过程中会使周围温度升高，容易降低一些密封结构的使用寿命，甚至导致密封结构失效。由此，本申请实施例通过对匀流固定部件100进行设计，可以使加热部件200与密封结构之间的传热路径得到延长，在一定程度上可以缓解密封结构使用寿命降低甚至失效的问题。
参考图3和图4，所公开的匀流固定部件100包括自上而下依次设置的密封配合部110、延长部120和固定件130，其中，密封配合部110与延长部120的一端固定连接，密封配合部110用于与工艺腔室20密封配合。由此，通过设置密封配合部110，可以实现与工艺腔室20的密封配合，以保证整个匀流固定部件100与工艺腔室20之间的密封性。另外，固定件130与延长部120的另一端固定连接，且固定件130的上表面用于设置加热部件200，固定件130的下表面用于与匀流部件300固定，如此，通过固定件130既可以对加热部件200进行承载，又可以对匀流部件300进行安装。
示例性地，延长部120可以为圆环结构，且密封配合部110凸出于延长部120的外周壁，密封配合部110还用于与工艺腔室20固定。也就是说，密封配合部110在与工艺腔室20密封配合的同时还与工艺腔室20固定，由此，通过密封配合部110与工艺腔室20的固定可以实现整个匀流固定部件100与工艺腔室20之间的密封配合和固定连接，以保证整个匀流固定部件100与工艺腔室20之间连接的密封性和稳定性，属于典型的一物多用。
示例性地，密封配合部110也可以为圆环结构，其中，密封配合部110的轴向尺寸相对较小，而延长部120的轴向尺寸相对较大而大于密封配合部110的轴向尺寸。
需要说明的是，在实施例中，密封配合部110和延长部120均为圆环结构，当然，这并不是限制性的，在图未示出的一些其他实施例中，密封配合部110和延长部120各自还可以为其他形状，此处不作具体限定。
示例性地，如图4所示，密封配合部110和延长部120二者整体的断面可以成L型，但是这同样不是限制性的，除此以外，还可以为其他形状。
一些实施例中，密封配合部110与延长部120之间可以采用焊接、铆接、粘接、卡接、插接、套接等形式连接，以方便制造；另一些实施例中，密封配合部110与延长部120还可以为一体结构以提高整体强度。
另外，延长部120与固定件130之间的固定连接形式可以为焊接、粘接、铆接等，以提高连接处的牢固性。
示例性地，如图2所示，固定件130为板状结构，沿水平方向设置，固定件130的朝上一侧表面形成固定件130的上表面，固定件130朝下一侧表面形成固定件130的下表面；在本实施例中，可以通过固定件130的上表面支撑加热部件200，当然，还可以设置紧固件，以通过紧固件将加热部件200固定于固定件130。另外，还可以通过紧固件将匀流部件300固定至固定件130的下表面，以保证匀流部件300在承载装置50上方的稳定性。
本申请实施例中，将该匀流固定部件100应用于半导体工艺设备的进气集成装置10中，密封配合部110与工艺腔室20之间通过密封件30实现密封配合，使用时进气集成装置10的加热部件200散发的热量，依次经过固定件130、延长部120和密封配合部110，才能到达密封配合部110与工艺腔室20之间的密封件30，也就是说，由于延长部120的存在，延长了热源与密封件30之间的热量传递路径，从而可以降低热源温度对于密封件30的影响，进而可以延长密封件30的使用寿命，同时保证密封效果。
可以理解的是，延长部120的壁厚越大，则强度越大，支撑性能越好；但是，厚度过大，一方面会增加延长部120占用的空间大小，不利于轻量化和小型化；另一方面，还会增大向上的传热效率，也即向密封边界传输的热量，而且会减小延长部120和固定件130围成的空间体积，进而减小可用于设置加热部件200的空间，导致加热部件200尺寸减小，降低对工艺气体的加热效率和均匀性。
为了尽可能地降低延长部120的壁厚，同时又保证匀流固定部件100的强度，匀流固定部件100还可以包括多个凸部140，如图3所示，多个凸部140间隔设置在延长部120的内周壁，如此，通过多个凸部140的设置，可以对延长部120的多个区域起到加强作用，从而可以在延长部120厚度尺寸较小的情况下，仍然能够保证延长部120的强度，防止其因强度不足而随意变形。
示例性地，匀流固定部件100可以包括六个凸部140，六个凸部140在延长部120的周向均匀排布，从而可以使延长部120各区域处的强度较为均衡，防止出现薄弱部位。当然，凸部140还可以为其他数量以及其他排布形式，此处不作具体限定。
本申请实施例可以对凸部140去除部分材料，以减轻凸部140的质量，从而减轻整个匀流固定部件100的质量，并且还可以节约材料。示例性地，凸部140可以设置通孔或者盲孔141，以减轻凸部140的质量，节约材料的同时减少向上的热量传递。
一些实施例中，各凸部140、密封配合部110和延长部120可以一体成型，此种制造方式可以降低制造难度，缩短制造周期，并且还可以保证整体强度。示例性地，可以采用铸造、锻造、机加工等方式实现一体成型，当然，还可以为其他方式，此处不作限制。
为进一步缓解加热部件200产生的热量对密封件30造成不良影响，本申请实施例中，延长部120的热导率可以小于固定件130的热导率，此种设计方式可以有利于降低经由延长部120传递的热量，在一定程度上可以降低传递至密封件30的总热量。
示例性地，延长部120可以采用哈氏合金C22，该种材料的热导率为9.4-17.5w/m*k，固定件130可以采用Ni-200，该种材料的热导率为70w/m*k，当然，延长部120和固定件130各自还可以为其他材料，此处不作具体限定。
另外，当凸部140与延长部120一体成型时，两者的材料相同，均可以为哈氏合金C22；而匀流部件300的材料可以与固定件130相同，均为Ni-200。
综上可知，本申请实施例通过匀流固定部件100的设计，可以延长加热部件200与密封件30之间的间距，并且，通过降低延长部120的壁厚，以及选用热导率相对较低的材料，可以达到降低传递至密封件30的总热量的效果。
另外，密封配合部110的外缘壁可以设有多个弧形槽，这些弧形槽可以用于与其他构件(如，下述的环形隔热件430等)装配，以实现定位。当然，密封配合部110还可以设有多个螺纹孔，以便于与下述的隔离件600固定。除此以外，密封配合部110还可以设有多个预留孔。固定件130还可以设有螺纹孔，以便于与加热部件200固定连接。
基于上述匀流固定部件100，本申请实施例还公开了一种进气集成装置10，应用于半导体工艺设备。参考图2至图9，半导体工艺设备包括工艺腔室20，进气集成装置10设于工艺腔室20，以便于通过匀流部件300向工艺腔室20内输送工艺气体，当然，还可以通过加热部件200为工艺腔室20内进行的工艺过程提供热环境。所公开的进气集成装置10包括加热部件200、匀流部件300和上述匀流固定部件100，其中，加热部件200和匀流部件300均设于工艺腔室20中，并通过匀流固定部件100进行固定。
其中，如图2所示，匀流部件300可以包括匀流板310和环形固定部320，环形固定部320设置在匀流板310的边缘，通过与固定件130连接将匀流板310固定于匀流固定部件100。基于此，通过环形固定部320与固定件130的连接，可以将匀流部件300安装至匀流固定部件100，以保证匀流部件300的稳定性。示例性地，环形固定部320可以采用紧固件安装至固定件130的下表面。
为了使气体扩散至工艺腔室20中，匀流板310可以设有多个气孔，通过多个气孔将工艺气体通入工艺腔室20中，从而可以扩大工艺气体在工艺腔室20中的扩散面积，有利于提高工艺气体与位于匀流部件300下方的承载装置50所承载的基材表面接触的均匀性，进而有利于提高产品良率。
为保证气体在进入多个气孔之前能够得以扩散，在图2所示的实施例中，匀流板310的上表面与固定件130的下表面间隔设置，与此同时，环形固定部320的一端可以设有一定长度的环形筒，该环形筒与匀流板310连接，如此，固定件130的下表面、匀流板310的上表面以及环形筒的内壁共同围成气体空间，在工艺气体进入多个气孔之前，首先进入气体空间，并在气体空间中充分扩散，以使工艺气体能够通过每个气孔通入工艺腔室20中，从而可以使工艺气体在通入工艺腔室20之前已经得到充分扩散，有利于提高气体在工艺腔室20中扩散的均匀性和扩散效率。也就是说，在如图2所示的实施例中，由于固定件130采用板状结构，固定件130在承载加热部件200和匀流部件300的同时，还与匀流板310和环形固定部320围成了用于工艺气体扩散的气体空间，在保证工艺气体扩散效果的同时，简化了匀流部件300的结构，属于典型的一物多用。
为了将工艺气体输送至气体空间中，如图2所示，进气集成装置10还可以包括输气管道，该输气管道依次穿过加热部件200和固定件130，可以延伸至气体空间并连通，以便于将工艺气体输送至气体空间。示例性地，输气管道进口处还可以设有混气部件，如此，当需要将多种工艺气体的混气输送至工艺腔室20中时，可以使多种工艺气体经由上游气路分别输送至混气部件进行混气，而后通过输气管道将混气通入至气体空间中扩散，最终通过多个气孔通入至工艺腔室20中进行反应，以满足工艺需求。
考虑到加热部件200长时间处于高温状态，为防止加热部件200与固定件130粘连，进气集成装置10还可以包括第一间隔件410，如图2所示，该第一间隔件410设置在加热部件200与固定件130之间，如此，通过第一间隔件410将加热部件200与固定件130分隔开，缓解加热部件200与固定件130之间由于长期高温而出现粘连的问题。
示例性地，第一间隔件410可以为间隔板件、间隔层等，如，陶瓷板、陶瓷层等，当然，还可以为其他材料、形状，此处不作具体限定。
考虑到加热部件200长时间处于高温状态，为防止靠近于加热部件200的匀流部件300与固定件130粘连，进气集成装置10还可以包括第二间隔件420，如图2所示，该第二间隔件420设置在匀流部件300与固定件130之间，如此，通过第二间隔件420将匀流部件300与固定件130分隔开，可以有效缓解匀流部件300与固定件130之间由于长期高温而出现粘连的问题，从而可以降低维护成本。当匀流部件300和固定件130采用相同材料时，如，Ni-200等，容易在高温下发生粘连，通过第二间隔件420可以有效缓解粘连的问题。
示例性地，第二间隔件420可以为隔热环并设置在环形固定部320与固定件130之间等，如，薄陶瓷环或薄哈氏合金C22环等，当然，还可以为其他材料、形状，此处不作具体限定。
为实现温度检测，进气集成装置10还可以包括温度监控部件500，如图2所示，该温度监控部件500贯穿加热部件200(图2中温度监控部件500贯穿加热部件200的部分未示出)，并与固定件130相对，用于监控固定件130的温度。基于该种设置，通过温度监控部件500可以实时监测固定件130的温度，以便于为温度的控制提供数据基础。
示例性地，温度监控部件500可以自上至下穿入进气集成装置10中，除了穿过加热部件200，还穿过上述的第一间隔件410以及下述的隔离件600等，以保证温度监控部件500的检测端头能够与固定件130相对。
此处需要说明的是，固定件130的面向加热部件200的上表面可以设有盲孔，温度监控部件500的检测端头的至少部分插入至盲孔中，一方面，盲孔实现对检测端头进行限位，另一方面还可以使检测端头直接对盲孔的底壁进行检测，盲孔的底壁更接近匀流部件300，从而可以保证检测精度。当然，在其他实施例中，温度监控部件500的检测端头还可以与固定件130的上表面相对，以直接检测上表面的温度。
示例性地，温度监控部件500可以采用温度传感器，当然，还可以为其他构件，此处不作具体限定。
考虑到加热部件200会将热量传递至匀流固定部件100，使匀流固定部件100升温，并且，进气集成装置10安装至工艺腔室20时，匀流固定部件100的固定件130和延长部120可以均位于工艺腔室20的内部，从而可以通过工艺腔室20的侧壁阻挡固定件130和延长部120向外散热；而密封配合部110则可以位于工艺腔室20的外侧。
基于上述情况，为防止密封配合部110向外散热，进气集成装置10还可以包括环形隔热件430，如图2所示，该环形隔热件430围绕密封配合部110设置，也就是说，环形隔热件430包覆在密封配合部110的外周壁和部分上表面。基于此，通过环形隔热件430可以将密封配合部110包围在内部，从而可以有效隔绝密封配合部110向外散热。
在图未示出的一些实施例中，工艺腔室20的顶部可以设有腔室盖22，该腔室盖22可拆卸地安装至工艺腔室20的顶部，匀流固定部件100可以安装至腔室盖22。换句话说，工艺腔室20包括：基体21和腔室盖22，腔室盖22可拆卸地安装至基体21的顶部，匀流固定部件100可以安装至腔室盖22。
具体地，密封配合部110的下表面可以搭接在腔室盖22的上表面，并通过密封件30密封，而环形隔热件430的断面可以为L型结构，密封配合部110可以位于L型结构的内侧空间，且环形隔热件430可以安装至腔室盖22的上表面，如此，通过环形隔热件430和腔室盖22的上表面可以对密封配合部110的外周壁、上表面、下表面进行包裹，既可以实现对密封配合部110的限位，又可以实现隔热。
示例性地，环形隔热件430可以采用陶瓷件，其具有良好的隔热效果，当然，还可以为其他材料，此处不作具体限定。
在一些实施例中，进气集成装置10还可以包括隔离件600，如图2所示，该隔离件600设置在密封配合部110上，且与密封配合部110固定连接，通过隔离件600可以对匀流固定部件100的位于密封配合部110一端的开口进行遮挡。
考虑到加热部件200位于匀流固定部件100的内部，温度监控部件500的检测端头位于匀流固定部件100的内部，除此以外，匀流固定部件100的内部还可以设置过热开关，通过过热开关来有效防止固定件130的温度过高。而上述加热部件200、温度监控部件500、过热开关等构件，均需要进行供电或信号传输，需要设置线缆，由此，隔离件600可以设有多个避让孔，以便于使线缆能够穿过。
示例性地，隔离件600可以为板件，其材料可以选用铝合金，当然，隔离件600还可以为其他形状，采用其他材料，此处不作具体限定。
为实现降温，进气集成装置10还可以包括调温部件700，如图2所示，该调温部件700设置在环形隔热件430上，通过调温部件700可以对其周围的构件进行降温，以防止加热部件200经由匀流固定部件100扩散出的热量对密封件30、线缆等构件造成不良影响。
需要说明的是，若在图1所示的进气集成模块上增设调温部件，那么为了实现降温，调温部件需要靠近密封边界设置，而由于匀流单元15距离密封边界比较近，因此，增设的调温部件必然也会距离匀流单元15较近，在采取局部降温措施时，会导致匀流单元15靠近调温部件的区域温度较低，而远离调温部件的区域温度较高，从而极易使匀流单元15的温度均匀性变差，导致匀流小孔通道内附着冷凝颗粒，进而使成膜均匀性变差。而本申请中，由于设置有匀流固定部件100，密封配合部110与腔室盖22形成的密封边界(密封件30位置处)与匀流部件300之间还隔着一个延长部120，使密封边界与匀流部件300的距离足够远，因此可以在不影响匀流部件300温度均匀性的前提下，设置上述调温部件700。
参考图5，一些实施例中，调温部件700可以包括通气管710，通气管710的第一端用于进气，通气管710的第二端封闭，且通气管710的第一端的高度高于通气管710的第二端的高度，另外，通气管710上还设置多个出气孔，如此，通过通气管710的第一端可以接收外部供应的冷却气体，在向第二端流动的过程中通过多个出气孔排出，从而可以对周围的构件(如，密封件30、线缆等)进行降温，以避免周围的构件由于匀流固定部件100扩散的热量而降低使用寿命甚至失效。
基于上述设置，可以利用通气管710散发冷却气体而降低密封件30以及线缆所处环境的温度，有利于延长密封件30及线缆的使用寿命；另外，冷却气体沿着通气管710由高位向低位流动，且低位终点封闭不通，使得冷却气体最终经由出气孔排出，以实现对密封件30和线缆的冷却降温效果。
一些实施例中，通气管710可以为圆环形管，多个出气孔沿圆环形管的周向均匀排布，如此，可以使冷却气体沿圆周方向均匀排出，使密封件30和线缆在圆周方向上均匀降温。
为提高降温效果，调温部件700还可以包括多个通气管710，示例性地，多个通气管710并排设置，以扩大冷却气体的排出面积，从而增大冷却面积，以提高冷却降温效果。通气管710为环形管时，多个通气管710也可嵌套设置，当然，通气管710还可以为其他形状，且多个通气管710还可以为其他排布方式，此处不作具体限定。
另外，出气孔的孔径可以根据实际工况中加热部件200的设定温度而调整，如，设定温度较高，可以增大孔径，设定温度较低，可以减小孔径。示例性地，当加热部件200的设定温度为450℃时，出气孔的孔径可以为1.5mm，当然，还可以是其他对应关系，此处不作具体限定。
参考图2至图9，基于上述进气集成装置10，本申请实施例还公开了一种半导体工艺设备，可以为CVD镀膜设备，当然，还可以为其他设备，此处不作具体限定。
所公开的半导体工艺设备包括工艺腔室20和上述进气集成装置10。另外，半导体工艺设备还可以包括密封件30，该密封件30设置在密封配合部110与工艺腔室20之间，以对密封配合部110与工艺腔室20之间起到密封作用。
在图未示出的一些实施例中，工艺腔室20包括：基体21和腔室盖22。密封件30可以设置在密封配合部110与工艺腔室20的腔室盖22之间，以起到密封作用。
按照不同的镀膜要求，有些金属膜的镀制(例如：金属钛)需要将工艺气体等离子化、且需要在高温环境中(例如400℃以上)才能发生化学反应，从而沉积薄膜。因此，若将上述半导体工艺设备的进气集成装置10应用于该类金属膜的镀制(例如：金属钛)中，混气部件、匀流固定部件100、匀流部件300的材料均需采用导电材料制作，另外，半导体工艺设备还可以包括：馈入装置40、承载装置50、抽气集成装置等结构，射频馈入装置40与混气部件电连接，用于将射频能量馈入至混气部件；混气部件、匀流固定部件100和匀流部件300三者形成的整体用作上电极。
参考图2，射频能量经由射频馈入装置40馈入到进气集成装置10中，具体的，射频能量依次传导至混气部件、匀流固定部件100、匀流部件300，使得进气集成装置10内部金属器件均带有射频能量。参考图2所示，包括该进气集成装置10的半导体工艺设备中，进气集成装置10可用作上电极，承载装置50可用作下电极，从而提供工艺反应所需的等离子体化环境。从匀流部件300穿出的气体在上电极和下电极的共同作用下进行等离子体化后，在400℃以上的高温环境中发生化学反应，在基材的上表面沉积薄膜，剩余工艺气体及副产物由抽气集成装置排出到厂务端进行后续分解处理。
为了满足工艺安全要求，承载装置50安装在工艺腔室20的基体21上，并经由下方转接装置接地，另外，工艺腔室20的基体21也接地。
为降低能量损耗和热量损失，工艺腔室20还可以包括绝缘部件800，如图2所示，其中，匀流固定部件100和匀流部件300形成匀流结构，绝缘部件800设置在匀流结构与腔室盖22之间。通过绝缘部件800的设置，可以降低射频和温度能量损失。
需要说明的是，在图2所示的实施例中，绝缘部件800仅设置在匀流结构与腔室盖22之间的，但是这并不是限制性的，在图未示出的一些其他实施例中，绝缘部件800也可以仅设置在匀流结构与基体21之间；而在图未示出的另一些实施例中，绝缘部件800也可以同时设置在匀流结构与基体21以及腔室盖22之间，在不违背本申请的发明构思及技术原理的前提下，上述情况均在本申请的保护范围之内。
参考图2，一些实施例中，绝缘部件800可以包括自上而下设置的第一绝缘件810和第二绝缘件820，第一绝缘件810以及所述第二绝缘件820均用于与工艺腔室20的内表面固定，其中，第一绝缘件810的上表面与密封配合部110的下表面固定，第二绝缘件820的下表面与匀流部件300的下表面齐平设置。基于此种设置，通过第一绝缘件810和第二绝缘件820的配合，可以对延长部120和固定件130进行包裹，以减少热量向周围扩散，达到了隔热的效果；另外，通过第一绝缘件810和第二绝缘件820的配合，还可以对带有射频能量的一些金属器件进行包裹，从而可以降低射频能量的损失。
示例性地，如图2所示，第一绝缘件810的断面可以成L型，其中，L型的其中一个内侧面与工艺腔室20的腔室盖22的上表面固定连接，L型的另一个内侧面与腔室盖22的内侧壁接触。与未设置绝缘部件800的实施例不同的是，如图2所示，密封配合部110的下表面是与第一绝缘件810的上表面搭接的，密封件30位于密封配合部110与第一绝缘件810之间，以起到与工艺腔室20密封绝缘的作用。另外，第一绝缘件810与腔室盖22之间也可以设有密封件30，以起到密封绝缘的作用。
考虑到第二绝缘件820更靠近于工艺腔室20的反应空间，本申请实施例中，第二绝缘件820的介电常数可以小于第一绝缘件810的介电常数，使得第二绝缘件820的绝缘效果优于第一绝缘件810的绝缘效果，以便于起到更好地降低射频能量损失的作用。
考虑到加热部件200、匀流部件300等位于第二绝缘件820所包围的空间内，本申请实施例中，第二绝缘件820的热导率可以小于第一绝缘件810的热导率，使得第二绝缘件820的隔热性能优于第一绝缘件810的隔热性能，从而可以有利于减少加热部件200、匀流部件300等构件的温度能量损失。
此处需要说明的是，第二绝缘件820的下表面与匀流部件300的下表面齐平设置，一方面可以防止第二绝缘件820的下表面位于匀流部件300的下表面之下而对匀流部件300通入工艺腔室20内的工艺气体产生阻碍作用，影响工艺气体在工艺腔室20内扩散，换句话说，若第二绝缘件820的下表面位于匀流部件300的下表面之下，也就是第二绝缘件820的一部分内侧壁会凸出于匀流板310的下表面，从而阻挡沿匀流板310下表面流动的气体向四周扩散；另一方面，可以防止第二绝缘件820的下表面位于匀流部件300的下表面之上而降低对匀流部件300的隔热作用，换句话说，若第二绝缘件820的下表面位于匀流部件300的下表面之上，也就是匀流板310的部分外周壁脱离了第二绝缘件820的包裹，凸出了第二绝缘件820的下表面，因此，降低对第二绝缘件820对匀流部件300的隔热作用。因此，齐平设置既可以保证工艺气体在工艺腔室20内充分扩散而不受阻，还可以减少温度能量损失。
为提高匀流部件300周围温度的均匀性，半导体工艺设备还可以包括辅助加热部件900，如图6和图7所示，该辅助加热部件900设于匀流部件300的周围，依靠热辐射可以提高匀流部件300周边部的温度，从而可以抵消一部分热量损失，使匀流部件300周围的温度更加均匀。其中，辅助加热部件900可以包括环形加热器910，以对匀流部件300的一圈进行加热，提高匀流部件300的温度均匀性，当然，还可以为其他形状，此处不作具体限定。
考虑到第二绝缘件820位于匀流部件300的周围，可以将辅助加热部件900设置于第二绝缘件820，以实现对辅助加热部件900的安装。
参考图6和图7，一些实施例中，第二绝缘件820可以包括件本体821和环凸部822，其中，环凸部822设置在件本体821的外侧，件本体821的至少部分外表面用于与工艺腔室20的内表面固定。基于此种设置，可以实现件本体821与工艺腔室20的装配。示例性的，如图2所示，件本体821装配在腔室盖22上。
为实现对辅助加热部件900的安装，环凸部822可以设置有环形凹槽8221，环形凹槽8221的开口位置设有环形盖8222，环形凹槽8221与环形盖8222之间设有多个支架8223，环形加热器910设于环形凹槽8221与环形盖8222之间，且支架8223用于支撑环形加热器910。基于此种设置，通过环形凹槽8221可以为环形加热器910提供容纳空间，并且通过环形盖8222对环形加热器910起到限位和隔热作用，以防止环形加热器910脱离环形凹槽8221，以及热量向外散发；通过多个支架8223可以对环形加热器910起到支撑和限位作用，保证环形加热器910在环形凹槽8221与环形盖8222之间不会随意移动。示例性地，支架8223可以为不锈钢支架。
进一步地，环形盖8222和环形凹槽8221的内壁均与环形加热器910间隙配合，也就是环形盖8222和环形凹槽8221的内壁均与环形加热器910不接触，仅与支架8223接触，从而可以降低热传导效率，以通过热辐射的方式来提高匀流部件300周围的温度，从而提高整体均匀性。
另外，在保证第二绝缘件820整体强度的情况下，第二绝缘件820的外侧壁可以开设多个槽，以减小第二绝缘件820与腔室盖22之间的接触面积，从而可以减少热量传递至腔室盖22，降低了热量损耗。
为实现对环形加热器910温度的实时监测，半导体设备还可以包括温度检测元件1010，如图1和图6所示，该温度检测元件1010的检测端延伸至环形加热器910附近，以实时检测环形加热器910的温度，防止出现过热现象。
下面以图2所示的半导体设备为例，对密封件30附近的环境温度进行实验。将加热部件200分别设定控温450℃和550℃，通气管710进行风冷散热，匀流固定部件100的延长部120的壁厚为2mm。在加热部件200的设定控温分别为450℃和550℃的情况下，密封件30附近的环境温度分别如图8和图9所示，从图8和图9可以得出，加热部件200的设定控温为450℃时，密封件30附近的环境温度为110℃；加热部件200的设定控温为550℃时，密封件30附近的环境温度为180℃。密封件30附近的环境温度比加热部件200的设定控温明显降低，可以减轻高温对于密封件30的影响，延长密封件30的使用寿命。
参考图2，工艺气源A、B、C由进气集成装置10的上游气路进入到混气部件的混气通道中，经充分混合后进入到匀流部件300的上方空间中，随气压穿过匀流部件300上的数百个通孔，抵达承载装置50的基材的上表面，气源等离子体化在400℃以上的高温环境中发生化学反应，在基材上表面沉积薄膜，剩余工艺气体及副产物由抽气集成装置排出到厂务端进行后续分解处理。
本申请提供的半导体工艺设备中，进气集成装置10的加热部件200散发的热量，可以经过固定件130、延长部120和密封配合部110，才能到达密封配合部110与工艺腔室20形成的密封件30，延长了热源与密封件30之间的热量传递路径，从而可以降低热源温度对于密封件30的影响，从而延长密封件30的使用寿命，同时保证密封效果。
需要说明的是，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、商品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、商品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、商品或者设备中还存在另外的相同要素。
本申请中所称的“一个实施例”、“实施例”或者“一个或者多个实施例”意味着，结合实施例描述的特定特征、结构或者特性包括在本申请的至少一个实施例中。此外，请注意，这里“在一个实施例中”的词语例子不一定全指同一个实施例。
以上所述仅为本申请的实施例而已，并不用于限制本申请。对于本领域技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。

Claims (20)

  1. 一种匀流固定部件，应用于半导体设备的进气集成装置，所述半导体设备包括工艺腔室，所述进气集成装置包括设置在所述工艺腔室中的加热部件和匀流部件，其特征在于，所述匀流固定部件包括自上而下依次设置的密封配合部、延长部以及固定件，其中，所述密封配合部与所述延长部的一端固定连接，所述密封配合部用于与所述工艺腔室密封配合；所述固定件与所述延长部的另一端固定连接，所述固定件的上表面用于设置所述加热部件，所述固定件的下表面用于与所述匀流部件固定。
  2. 根据权利要求1所述的匀流固定部件，其特征在于，
    所述延长部为圆环结构，所述密封配合部凸出于所述延长部的外周壁，所述密封配合部还用于与所述工艺腔室固定。
  3. 根据权利要求2所述的匀流固定部件，其特征在于，所述匀流固定部件还包括多个凸部，多个所述凸部间隔设置在所述延长部的内周壁。
  4. 根据权利要求3所述的匀流固定部件，其特征在于，所述凸部设置通孔或者盲孔。
  5. 根据权利要求3所述的匀流固定部件，其特征在于，各所述凸部、所述密封配合部和所述延长部一体成型。
  6. 根据权利要求1所述的匀流固定部件，其特征在于，所述延长部的热导率小于所述固定件的热导率。
  7. 一种进气集成装置，应用于半导体设备，所述半导体设备包括工艺腔室，其特征在于，所述进气集成装置包括：设置在所述工艺腔室中的加热部件和匀流部件、以及权利要求1-6任一项所述的匀流固定部件。
  8. 根据权利要求7所述的进气集成装置，其特征在于，所述匀流部件包括匀流板和环形固定部，所述环形固定部设置在所述匀流板的边缘，通过与所述固定件连接将所述匀流板固定于所述匀流固定部件。
  9. 根据权利要求8所述的进气集成装置，其特征在于，
    所述固定件为板状结构，所述固定件、所述匀流板和所述环形固定部围成用于工艺气体扩散的气体空间。
  10. 根据权利要求7所述的进气集成装置，其特征在于，所述进气集成装置还包括第一间隔件，所述第一间隔件设置在所述加热部件与所述固定件之间；和/或，
    所述进气集成装置还包括第二间隔件，所述第二间隔件设置在所述匀流部件与所述固定件之间。
  11. 根据权利要求7所述的进气集成装置，其特征在于，所述进气集成装置还包括温度监控部件，所述温度监控部件贯穿所述加热部件，并与所述固定件相对，用于监控所述固定件的温度。
  12. 根据权利要求7所述的进气集成装置，其特征在于，所述进气集成装置还包括环形隔热件，所述环形隔热件围绕所述密封配合部设置。
  13. 根据权利要求12所述的进气集成装置，其特征在于，
    所述进气集成装置还包括隔离件，所述隔离件设置在所述密封配合部上并与所述密封配合部固定连接。
  14. 根据权利要求12所述的进气集成装置，其特征在于，所述进气集成装置还包括调温部件，所述调温部件设置在所述环形隔热件上。
  15. 根据权利要求14所述的进气集成装置，其特征在于，所述调温部件包括通气管，所述通气管的第一端用于进气，所述通气管的第二端封闭，且所述通气管第一端的高度大于所述通气管第二端的高度，所述通气管上设置有多个出气孔。
  16. 根据权利要求15所述的进气集成装置，其特征在于，所述通气管为圆环形管，多个所述出气孔沿所述圆环形管的周向均匀排布。
  17. 一种半导体工艺设备，其特征在于，包括：工艺腔室和权利要求7-16任一项所述的进气集成装置；
    所述半导体设备还包括密封件，所述密封件设置在所述密封配合部与所述工艺腔室之间。
  18. 根据权利要求17所述的半导体工艺设备，其特征在于，所述工艺腔室包括：基体、腔室盖和绝缘部件，所述匀流固定部件和所述匀流部件形成匀流结构，所述绝缘部件设置在匀流结构与所述基体之间和/或所述绝缘部件设置在匀流结构与所述腔室盖之间。
  19. 根据权利要求18所述的半导体工艺设备，其特征在于，所述绝缘部件包括自上而下设置的第一绝缘件和第二绝缘件；
    所述第一绝缘件的上表面与所述密封配合部的下表面固定，所述第二绝缘件的下表面与所述匀流部件的下表面齐平设置；所述第一绝缘件以及所述第二绝缘件均用于与所述工艺腔室的内表面固定；
    所述第二绝缘件的介电常数小于所述第一绝缘件的介电常数，所述第二绝缘件的热导率小于所述第一绝缘件的热导率。
  20. 根据权利要求19所述的半导体工艺设备，其特征在于，所述第二绝缘件包括件本体和环凸部，所述环凸部设置在所述件本体的外侧，所述件本体的至少部分外表面用于与所述工艺腔室的内表面固定；
    所述半导体设备还包括辅助加热部件，所述辅助加热部件包括环形加热器；
    所述环凸部设置有环形凹槽，所述环形凹槽的开口位置设有环形盖，所述环形凹槽与所述环形盖之间设有多个支架；
    所述环形加热器设于所述环形凹槽与所述环形盖之间，所述支架用于支撑所述环形加热器，所述环形盖和所述环形凹槽的内壁均与所述环形加热器间隙配合。
PCT/CN2024/136983 2023-12-12 2024-12-05 匀流固定部件、进气集成装置和半导体工艺设备 Pending WO2025124264A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202311708195.0 2023-12-12
CN202311708195.0A CN120138604A (zh) 2023-12-12 2023-12-12 匀流固定部件、进气集成装置和半导体设备

Publications (1)

Publication Number Publication Date
WO2025124264A1 true WO2025124264A1 (zh) 2025-06-19

Family

ID=95945895

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2024/136983 Pending WO2025124264A1 (zh) 2023-12-12 2024-12-05 匀流固定部件、进气集成装置和半导体工艺设备

Country Status (3)

Country Link
CN (1) CN120138604A (zh)
TW (1) TWI901470B (zh)
WO (1) WO2025124264A1 (zh)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110544645A (zh) * 2018-05-28 2019-12-06 北京北方华创微电子装备有限公司 工艺腔室用匀流件、工艺腔室和半导体处理设备
CN111996590A (zh) * 2020-08-14 2020-11-27 北京北方华创微电子装备有限公司 一种工艺腔室
CN112458441A (zh) * 2020-10-22 2021-03-09 北京北方华创微电子装备有限公司 半导体工艺设备的反应腔室及半导体工艺设备
CN113337810A (zh) * 2021-05-26 2021-09-03 北京北方华创微电子装备有限公司 内衬装置及半导体加工设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110484895B (zh) * 2018-05-14 2021-01-08 北京北方华创微电子装备有限公司 腔室组件及反应腔室

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110544645A (zh) * 2018-05-28 2019-12-06 北京北方华创微电子装备有限公司 工艺腔室用匀流件、工艺腔室和半导体处理设备
CN111996590A (zh) * 2020-08-14 2020-11-27 北京北方华创微电子装备有限公司 一种工艺腔室
CN112458441A (zh) * 2020-10-22 2021-03-09 北京北方华创微电子装备有限公司 半导体工艺设备的反应腔室及半导体工艺设备
CN113337810A (zh) * 2021-05-26 2021-09-03 北京北方华创微电子装备有限公司 内衬装置及半导体加工设备

Also Published As

Publication number Publication date
TWI901470B (zh) 2025-10-11
CN120138604A (zh) 2025-06-13
TW202530464A (zh) 2025-08-01

Similar Documents

Publication Publication Date Title
KR102323167B1 (ko) 프로세싱 챔버 내에서의 퍼징 및 플라스마 억제를 위한 방법 및 장치
EP0708477B1 (en) Controlling edge deposition on semiconductor substrates
JP7557548B2 (ja) 加熱装置および半導体処理装置
US20030019428A1 (en) Chemical vapor deposition chamber
US11584993B2 (en) Thermally uniform deposition station
CN101523592A (zh) 用于光刻胶剥除和后金属蚀刻钝化的高室温工艺和室设计
KR20010113558A (ko) 세라믹 기판 지지체
US11110425B2 (en) Gas distribution plate for thermal deposition
CN114341398A (zh) 温控吊灯型喷头
CN114883221A (zh) 半导体热处理设备
US20210351016A1 (en) Shield cooling assembly, reaction chamber and semiconductor processing apparatus
US20020100417A1 (en) Heating-type trap device and film-deposition apparatus
US11732358B2 (en) High temperature chemical vapor deposition lid
WO2025124264A1 (zh) 匀流固定部件、进气集成装置和半导体工艺设备
CN111063603B (zh) 半导体工艺设备
WO2024078063A1 (zh) 等离子体刻蚀设备、介质窗加热装置及系统
CN114774884B (zh) 半导体工艺炉的炉门及半导体工艺炉
CN119650393A (zh) 聚焦环、承载装置及工艺腔室
CN223292638U (zh) 一种喷淋板组件及薄膜沉积设备
CN219385402U (zh) 导气结构、炉管装置及加热炉
CN120261247A (zh) 反应腔室及处理设备
CN222619691U (zh) 工艺腔室和半导体工艺设备
WO2025228133A1 (zh) 半导体工艺设备
CN216620668U (zh) 一种炉门及半导体热处理设备
CN119530759A (zh) 排气管的加热装置和半导体设备

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24902685

Country of ref document: EP

Kind code of ref document: A1