WO2025111187A1 - Tin precursor compounds and related compositions and methods - Google Patents
Tin precursor compounds and related compositions and methods Download PDFInfo
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- WO2025111187A1 WO2025111187A1 PCT/US2024/055898 US2024055898W WO2025111187A1 WO 2025111187 A1 WO2025111187 A1 WO 2025111187A1 US 2024055898 W US2024055898 W US 2024055898W WO 2025111187 A1 WO2025111187 A1 WO 2025111187A1
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- alkyl
- alkenyl
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2284—Compounds with one or more Sn-N linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/04—Nickel compounds
Definitions
- TIN PRECURSOR COMPOUNDS AND RELATED COMPOSITIONS AND METHODS FIELD [001] The present disclosure relates to tin precursor compounds and related compositions and methods. CROSS-REFERENCE TO RELATED APPLICATIONS [002] This application claims the benefit under 35 USC 119 of U.S. Provisional Patent Application No.63/601,524, filed Nov.21, 2023, the disclosure of which is hereby incorporated herein by reference in its entirety. BACKGROUND [003] Some precursors are useful in the manufacture of microelectronic devices. The manufacture of such devices can involve use of deposition processes to form thin films, as well as extreme ultraviolet (EUV) lithography to form thin films.
- EUV extreme ultraviolet
- alkyl refers to a hydrocarbyl having from 1 to 30 carbon atoms. The alkyl may be attached via a single bond. An alkyl having n carbon atoms may be designated as a “C n alkyl.” For example, a “C3 alkyl” may include n- propyl and isopropyl. An alkyl having a range of carbon atoms, such as 1 to 30 carbon atoms, may be designated as a C1-C30 alkyl.
- the alkyl comprises or is selected from the group consisting of at least one of methyl, ethyl, n-propyl, 1-methylethyl (iso-propyl), n- butyl, iso-butyl, sec-butyl, n-pentyl, 1,1-dimethylethyl (t-butyl), n-pentyl, iso-pentyl, n-hexyl, isohexyl, 3-methylhexyl, 2-methylhexyl, heptyl, octyl, nonyl, decyl, dodecyl, octadecyl, or any combination thereof.
- alkyl refers generally to alkyls, alkenyls, alkynyls, and/or cycloalkyls.
- alkenyl refers to a hydrocarbyl having from 1 to 30 carbon atoms and at least one carbon-carbon double bond.
- the alkenyl comprises or is selected from the group consisting of at least one of a C1-C30 alkenyl, C1-C29 alkenyl, C1-C28 alkenyl, C1-C27 alkenyl, C1-C27 alkenyl, C1- C26 alkenyl, C1-C25 alkenyl, C1-C24 alkenyl, C1-C23 alkenyl, C1-C22 alkenyl, C1-C21 alkenyl, C1-C20 alkenyl, C1-C19 alkenyl, C1-C18 alkenyl, C1-C17 alkenyl, C1-C16 alkenyl, C1-C15 alkenyl, C1-C14 alkenyl, C1-C13 alkenyl, C1-C12 alkenyl, C1-C11 alkenyl, C1-C10 alkenyl, a C1-C9 alken
- alkenyl groups include, without limitation, at least one of vinyl, allyl, 1-methylvinyl, 1-propenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1,3-butadienyl, 2- methyl-1-propenyl, 2-methyl-2-propenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 4- pentenyl, 1,3-pentadienyl, 2,4-pentadienyl, 1,4-pentadienyl, 3-methyl-2-butenyl, 1- hexenyl, 2-hexenyl, 3-hexenyl, 1,3-hexadienyl, 1,4-hexadienyl, 2-methylpentenyl, 1-heptenyl, 3-heptenyl, 1-octenyl, 1,3-octadienyl, 1-nonenyl, 2-nonenyl, 3-nonenyl, 1-dec
- alkynyl refers to a hydrocarbyl having from 1 to 30 carbon atoms and at least one carbon-carbon triple bond.
- the alkynyl comprises or is selected from the group consisting of at least one of a C1-C30 alkynyl, C1-C29 alkynyl, C1-C28 alkynyl, C1-C27 alkynyl, C1-C27 alkynyl, C1- C26 alkynyl, C1-C25 alkynyl, C1-C24 alkynyl, C1-C23 alkynyl, C1-C22 alkynyl, C1-C21 alkynyl, C1-C20 alkynyl, C1-C19 alkynyl, C1-C18 alkynyl, C1-C17 alkynyl, C1-C16 alkynyl, C1-C15 al
- alkynyl groups include, without limitation, at least one of ethynyl, propynyl, n-butynyl, n-pentynyl, 3-methyl-1-butynyl, n-hexynyl, methyl-pentynyl, or any combination thereof.
- cycloalkyl refers to a non-aromatic carbocyclic ring having from 3 to 8 carbon atoms in the ring. The term includes a monocyclic non- aromatic carbocyclic ring and a polycyclic non-aromatic carbocyclic ring.
- polycyclic when used as a modifier, refers to a cycloalkyl having more than one cyclic ring structure, which may be fused, bridged, spiro, or otherwise bonded ring structures. For example, two or more cycloalkyls may be fused, bridged, or fused and bridged to obtain the polycyclic non-aromatic carbocyclic ring.
- the cycloalkyl may comprise, consist of, or consist essentially of, or may be selected from the group consisting of, at least one of cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or any combination thereof.
- aryl refers to a monocyclic or polycyclic aromatic hydrocarbon. The number of carbon atoms of the aryl may be in a range of 5 carbon atoms to 100 carbon atoms. In some embodiments, the aryl has 5 to 20 carbon atoms.
- the aryl has 6 to 8 carbon atoms, 6 to 10 carbon atoms, 6 to 12 carbon atoms, 6 to 15 carbon atoms, or 6 to 20 carbon atoms.
- the aryl is —C6H5.
- amino and/or “amine” refers to a functional group of formula —N(R a R b ), wherein R a and R b are independently a hydrogen, an alkyl (as defined herein), an aminoalkyl (as defined herein), or a silyl (as defined herein), or R a and R b are bonded to each other to form a C3-C20 N-heterocycle.
- the amino may comprise an alkylamino or a dialkylamino.
- the amino may comprise at least one of methylamino, dimethylamino, ethylamino, diethylamino, isopropylamino, di-isopropylamino, butylamino, sec-butylamino, tert-butylamino, di-sec-butylamino, isobutylamino, di- isobutylamino, di-tert-pentylamino, ethylmethylamino, isopropyl-n-propylamino, or any combination thereof.
- alkylaminos may include, without limitation, one or more of the following: primary alkylaminos, such as, for example and without limitation, methylamino, ethylamino, n-propylamino, isopropylamino, n-butylamino, sec-butylamino, isobutylamino, t-butylamino, pentylamino, 2- aminopentane, 3-aminopentane, 1-amino-2-methylbutane, 2-amino-2- methylbutane, 3-amino-2-methylbutane, 4-amino-2-methylbutane, hexylamino, 5- amino-2-methylpentane, heptylamino, octylamino, nonylamino, decylamino, undecylamino, dodecylamino, tridecylamino, tetradecylamino, pentadecta
- alkoxy or “alkoxide” refers to a functional group of formula —OR c , wherein R c is an alkyl (as defined herein), a silylalkyl, a cycloalkyl, or an aryl.
- the alkoxy may comprise, consist of, or consist essentially of, or may selected from the group consisting of, at least one of methoxy, ethoxy, methoxy, ethoxy, n-propoxy, 1-methylethoxy (isopropoxy), n- butoxy, iso-butoxy, sec-butoxy, tert-butoxy, or any combination thereof.
- sil refers to a functional group of formula —Si(R e R f R g ), where each of R e , R f , and R g is independently a hydrogen or an alkyl, as defined herein.
- the silyl is a functional group of formula —SiH3. In some embodiments, the silyl is a functional group of formula —SiR e H2, where R e is not hydrogen. In some embodiments, the silyl is a functional group of formula — SiR e R f H, where R e and R f are not hydrogen. In some embodiments, the silyl is a functional group of the formula —Si(R e R f R g ), where R e , R f , and R g are not hydrogen. In some embodiments, the silyl is a functional group of formula — Si(CH3)3.
- alkoxyalkyl refers to an alkyl as defined herein, wherein at least one of the hydrogen atoms of the alkyl is replaced with an alkoxy as defined herein.
- alkoxyalkyl refers to a functional group of formula —(alkyl)OR a , wherein the alkyl is defined above and wherein the R a is defined above.
- the alkoxyalkyl is a functional group of formula —(CH2)nOR a , where n is 1 to 10 and R a is defined above.
- the alkoxyalkyl is a functional group of the formula —CH2CH2OCH3.
- the term “aralkyl” refers to an alkyl as defined herein, wherein at least one of the hydrogen atoms of the alkyl is replaced with an aryl as defined herein.
- the term “aralkyl” refers to a functional group of formula —(alkyl)(aryl), wherein the alkyl is defined herein and the aryl is defined herein.
- the aralkyl is —CH2(C6H5).
- aminoalkyl refers to an alkyl as defined herein, wherein at least one of the hydrogen atoms of the alkyl is replaced with an amino as defined herein.
- aminoalkyl refers to a functional group of formula —(alkyl)N(R b R c R d ), wherein the alkyl is defined above and wherein R b , R c , and R d are defined above.
- the aminoalkyl is —CH2N(CH3)2.
- the aminoalkyl is —(CH2)3N(CH3)2.
- the aminoalkyl is aminomethyl (—CH2NH2).
- the aminoalkyl is N,N-dimethylaminoethyl (—CH2CH2N(CH3)2).
- the aminoalkyl is 3-(N-cyclopropylamino)propyl (—CH2CH2CH2NH—Pr).
- silalkyl refers to an alkyl as defined herein, wherein at least one of the hydrogen atoms of the alkyl is replaced with a silyl as defined herein.
- silalkyl refers to a functional group of formula —(alkyl)Si(R e R f R g ), wherein the alkyl is defined above and wherein R e , R f , and R g are defined above.
- the silylalky is a functional group of formula —(CH2)mSi(R e R f R g ), where m is 1 to 10 and where R e , R f , and R g are defined above.
- the silylalkyl is a functional group of formula —CH2Si(CH3)3.
- the term “haloalkyl” refers to an alkyl as defined here, wherein at least one of the hydrogen atoms of the alkyl is replaced with a halide as defined herein.
- the haloalkyl comprises a fluoroalkyl.
- the fluoroalkyl comprises at least one of —CH2CF3, —CH(CF3)2, — CH2F, —CH2CH2F, —CF3, —CF2CF3, or any combination thereof.
- halogen refers to a —Cl, —Br, —I, or —F.
- metal refers to at least one of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or any combination thereof. In some embodiments, the metal comprises a metal cation.
- the metal cation comprises at least one of a lithium cation, a sodium cation, a potassium cation, a rubidium cation, a cesium cation, a francium cation, a beryllium cation, a magnesium cation, a calcium cation, a strontium cation, a barium cation, a radium cation, a scandium cation, a titanium cation, a vanadium cation, a chromium cation, a manganese cation, an iron cation, a cobalt cation, a nickel cation, a copper cation, a zinc cation, a yttrium cation, a zirconium cation, a niobium cation, a molybdenum cation, a technetium cation, a ruthenium cation,
- compositions useful in extreme-ultraviolet (EUV) lithography comprise tin precursor compounds.
- the tin precursor compounds may be used to form tin-containing films useful in the fabrication of microelectronic devices, including semiconductor devices.
- the tin precursor compounds comprise tin (IV) monoalkyl species with at least one mono-ionic bidentate ligand.
- the precursor compositions may be used as deposition precursors for generating tin-containing films.
- the tin-containing films may be used in dry resist applications or as reflective coatings for extreme- ultraviolet (EUV) lithography, among others.
- the precursor compositions may be formed according to the methods disclosed herein in high yield and high purity, while also minimizing the number of steps required to produce the precursor compositions.
- the tin-containing films may also be formed according to the methods disclosed herein. That is, the tin-containing films disclosed herein may be formed by one or more deposition processes that utilize the precursor compositions.
- deposition processes include, without limitation, at least one of a chemical vapor deposition (CVD) process, a digital or pulsed chemical vapor deposition process, a plasma-enhanced cyclical chemical vapor deposition process (PECCVD), a flowable chemical vapor deposition process (FCVD), an atomic layer deposition (ALD) process, a thermal atomic layer deposition, a plasma-enhanced atomic layer deposition (PEALD) process, a metal organic chemical vapor deposition (MOCVD) process, a plasma-enhanced chemical vapor deposition (PECVD) process, or any combination thereof.
- CVD chemical vapor deposition
- PECCVD plasma-enhanced cyclical chemical vapor deposition process
- FCVD flowable chemical vapor deposition process
- ALD atomic layer deposition
- ALD atomic layer deposition
- thermal atomic layer deposition a thermal atomic layer deposition
- PEALD plasma-enhanced atomic layer deposition
- E is N(R 3 ); Q is independently a halogen; a is 1; and b is 3.
- E is N(R 3 ); Q independently comprises at least one of a halogen, an amine, or any combination thereof; a is 2; and b is 2.
- E is O or S; Q is independently a halogen; a is 1; and b is 3.
- E is O or S; Q independently comprises at least one of a halogen, an amine, or any combination thereof; a is 2; and b is 2.
- E is N(R 3 ); Q is a halogen; a is 1; and b is 1.
- E is N(R 3 ); a is 2; and b is 0.
- E is O or S; Q is a halogen; a is 1; and b is 1.
- E is O or S; a is 2; and b is 0.
- the compound comprises at least one of the following:
- the compound comprises at least one of the following: . [0077] In some embodiments, the resent in the composition at a purity of 95% to 99.9999%, or any range or subrange between 95% and 99.9999%.
- the compound is present in the composition at a purity of 96% to 99.9999%, 97% to 99.9999%, 98% to 99.9999%, 99% to 99.9999%, 99.9% to 99.9999%, 99.99% to 99.9999%, 99.999% to 99.9999%, 95% to 99.999%, 95% to 99.99%, 95% to 99.9%, 95% to 99%, 95% to 98%, 95% to 97%, or 95% to 96%.
- Some embodiments relate to a method of forming a precursor compound.
- E is N(R 3 ); Q is independently a halogen; m is 1; n is 3; a is 1; b is 1; and c is 3.
- E is O or S; Q is independently a halogen; m is 1; n is 3; a is 1; b is 1; and c is 3.
- E is N(R 3 ); Q is a halogen; m is 1; n is 1; a is 1; b is 1; and c is 1.
- E is O or S; Q is a halogen; m is 1; n is 1; a is 1; b is 1; and c is 1. [0093] In some embodiments, the method comprises: . [0094] In some embodiments, the method comprises: . [0095] In some embodiments, the method comprises:
- the compound is produced at a purity of 95% to 99.9999%, or any range or subrange between 95% and 99.9999%.
- the compound is present in the composition at a purity of 96% to 99.9999%, 97% to 99.9999%, 98% to 99.9999%, 99% to 99.9999%, 99.9% to 99.9999%, 99.99% to 99.9999%, 99.999% to 99.9999%, 95% to 99.999%, 95% to 99.99%, 95% to 99.9%, 95% to 99%, 95% to 98%, 95% to 97%, or 95% to 96%.
- the contacting further forms a compound of the formula MQ.
- Z is a metal; E is N(R 3 ); n is 4; a is 1; and b is 3.
- Z is a metal; E is O or S; n is 4; a is 1; and b is 3.
- Z is a metal; E is N(R 3 ); n is 2; a is 1; and b is 1.
- Z is a metal; E is O or S; n is 2; a is 1; and b is 1.
- the method comprises: .
- the method comprises: . [00 ] n some em o mens, e me o comprses: . [00118] In some embodiments, the method comprises: . [00119] In some embodiments, the method comprises: the contacting further forms a compound of the formula HZ. [00120] In some embodiments, Z is a metal; E is N(R 3 ); n is 4; a is 1; and b is 3. [00121] In some embodiments, Z is a metal; E is O or S; n is 4; a is 1; and b is 3.
- Z is a metal; E is N(R 3 ); n is 2; a is 1; and b is 1. [00123] In some embodiments, Z is a metal; E is O or S; n is 2; a is 1; and b is 1. [00124] In some embodiments, the method comprises: . [0 ] n some em o mens, e me o comprses: . [00126] In some embodiments, the method comprises: . [00127] In some embodiments, the method comprises: . [00128] In some embodiments, the compound is present in the composition at a purity of 95% to 99.9999%, or any range or subrange between 95% and 99.9999%.
- the compound is present in the composition at a purity of 96% to 99.9999%, 97% to 99.9999%, 98% to 99.9999%, 99% to 99.9999%, 99.9% to 99.9999%, 99.99% to 99.9999%, 99.999% to 99.9999%, 95% to 99.999%, 95% to 99.99%, 95% to 99.9%, 95% to 99%, 95% to 98%, 95% to 97%, or 95% to 96%.
- Aspect 2 The composition according to Aspect 1, wherein: E is N(R 3 ); Q is independently a halogen; a is 1; b is 3. Aspect 3.
- Aspect 4. The composition according to Aspect 1, wherein: E is O or S; Q is independently a halogen; a is 1; and b is 3.
- Aspect 5 The composition according to Aspect 1, wherein: E is O or S; Q independently comprises at least one of a halogen, an amine, or any combination thereof; a is 2; and b is 2.
- composition according to Aspect 1 wherein: E is N(R 3 ); Q is a halogen; a is 1; and b is 1.
- Aspect 7 The composition according to Aspect 1, wherein: E is N(R 3 ); a is 2; and b is 0.
- Aspect 8. The composition according to Aspect 1, wherein: E is O or S; Q is a halogen; a is 1; and b is 1.
- Aspect 9. The composition according to Aspect 1, wherein: E is O or S; a is 2; and b is 0.
- Aspect 10 The composition according to Aspect 1, wherein the compound comprises at least one of the following:
- Aspect 11 The composition according to Aspect 1, wherein the compound comprises at least one of the following:
- Aspect 12 The composition according to Aspect 1, wherein the compound comprises at least one of the following: R 3
- Aspect 13 The composition ect 1, wherein the compound comprises at least one of the following: .
- Aspect 15 The method according to Aspect 14, wherein: E is N(R 3 ); Q is independently a halogen; m is 1; n is 3; a is 1; b is 1; and c is 3.
- Aspect 16 The method according to Aspect 14, wherein: E is O or S; Q is independently a halogen; m is 1; n is 3; a is 1; b is 1; and c is 3.
- Aspect 17 The method according to Aspect 14, wherein: E is N(R 3 ); Q is a halogen; m is 1; n is 1; a is 1; b is 1; and c is 1.
- Aspect 19 The method according to Aspect 14, wherein the method comprises: . Aspe ct 20.
- Aspect 21 The method according to Aspect 14, wherein the method comprises: .
- R 1 independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, or any combination thereof;
- R 2 independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, an amine, or any combination thereof;
- E independently comprises N(R 3 ), O, or S, where: R 3 independently comprises at least one of a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, or any combination thereof;
- Q independently comprises a hydrogen, an alkyl, an alkenyl, an aryl, a silyl, an amine, an alkoxide
- Aspect 24 The method according to Aspect 23, wherein the contacting further forms a compound of the formula MQ.
- Aspect 25. The method according to Aspect 24, wherein: Z is a metal; E is N(R 3 ); n is 4; a is 1; and b is 3.
- Aspect 26. The method according to Aspect 24, wherein: Z is a metal; E is O or S; n is 4; a is 1; and b is 3.
- Aspect 27 The method according to Aspect 24, wherein: Z is a metal; E is N(R 3 ); n is 2; a is 1; and b is 1.
- Aspect 24 wherein: Z is a metal; E is O or S; n is 2; a is 1; and b is 1.
- Aspect 29. The method according to Aspect 24, wherein the method comprises: A spect 30.
- Aspect 33 wherein: Z is a metal; E is N(R 3 ); n is 4; a is 1; and b is 3.
- Aspect 35 The method according to Aspect 33, wherein: Z is a metal; E is O or S; n is 4; a is 1; and b is 3.
- Aspect 36 The method according to Aspect 33, wherein: Z is a metal; E is N(R 3 ); n is 2; a is 1; and b is 1.
- Aspect 37 The method according to Aspect 33, wherein: Z is a metal; E is O or S; n is 2; a is 1; and b is 1.
- Aspect 34 The method according to Aspect 33, wherein the method comprises: .
- Aspect 35 The method according to Aspect 35.
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202480077393.8A CN122341775A (en) | 2023-11-21 | 2024-11-14 | Tin precursor compounds and related compositions and methods |
| KR1020267019323A KR20260113269A (en) | 2023-11-21 | 2024-11-14 | Tin precursor compounds and related compositions and methods |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202363601524P | 2023-11-21 | 2023-11-21 | |
| US63/601,524 | 2023-11-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2025111187A1 true WO2025111187A1 (en) | 2025-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2024/055898 Pending WO2025111187A1 (en) | 2023-11-21 | 2024-11-14 | Tin precursor compounds and related compositions and methods |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250163082A1 (en) |
| KR (1) | KR20260113269A (en) |
| CN (1) | CN122341775A (en) |
| TW (1) | TW202536234A (en) |
| WO (1) | WO2025111187A1 (en) |
-
2024
- 2024-11-14 WO PCT/US2024/055898 patent/WO2025111187A1/en active Pending
- 2024-11-14 US US18/947,539 patent/US20250163082A1/en active Pending
- 2024-11-14 CN CN202480077393.8A patent/CN122341775A/en active Pending
- 2024-11-14 KR KR1020267019323A patent/KR20260113269A/en active Pending
- 2024-11-21 TW TW113144809A patent/TW202536234A/en unknown
Non-Patent Citations (5)
| Title |
|---|
| AHMET IBRAHIM Y., HILL MICHAEL S., RAITHBY PAUL R., JOHNSON ANDREW L.: "Tin guanidinato complexes: oxidative control of Sn, SnS, SnSe and SnTe thin film deposition", DALTON TRANSACTION, ROYAL SOCIETY OF CHEMISTRY, UK, vol. 47, no. 14, 1 January 2018 (2018-01-01), UK, pages 5031 - 5048, XP055967883, ISSN: 1477-9226, DOI: 10.1039/C8DT00773J * |
| ÁLVAREZ-RODRÍGUEZ, L. ET AL.: "Organic amides as suitable precursors to stabilize stannylenes", ORGANOMETALLICS, vol. 32, no. 12, 2013, pages 3557 - 3561, XP055967879, DOI: 10.1021/om400476c * |
| CATHERALL AMANDA L., HARRIS SHASA, HILL MICHAEL S., JOHNSON ANDREW L., MAHON MARY F.: "Deposition of SnS Thin Films from Sn(II) Thioamidate Precursors", CRYSTAL GROWTH & DESIGN, ASC WASHINGTON DC, US, vol. 17, no. 10, 4 October 2017 (2017-10-04), US , pages 5544 - 5551, XP093317838, ISSN: 1528-7483, DOI: 10.1021/acs.cgd.7b01100 * |
| DEBNICKE KURT, ERGEZINGER CHRISTINA, HARTMANN EVA, ZINN ALFRED, HIISLER KLAUS: "N,N,N′-tris(trimethylsilyl)organoamidine als regeantien in der komplexchemie", JOURNAL OF ORGANOMETALLIC CHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 352, no. 1-2, 6 September 1988 (1988-09-06), AMSTERDAM, NL, pages C1 - C4, XP093317834, ISSN: 0022-328X, DOI: 10.1016/0022-328X(88)83041-9 * |
| FOLEY STEPHEN R., ZHOU YUANLIN, YAP GLENN P. A., RICHESON DARRIN S.: "Synthesis of M II [N(SiMe 3 ) 2 ][Me 3 SiNC( t Bu)NSiMe 3 ] (M = Sn, Ge) from Amidinate Precursors: Active Catalysts for Phenyl Isocyanate Cyclization", INORGANIC CHEMISTRY, AMERICAN CHEMICAL SOCIETY, EASTON , US, vol. 39, no. 5, 1 March 2000 (2000-03-01), Easton , US , pages 924 - 929, XP093317822, ISSN: 0020-1669, DOI: 10.1021/ic991004b * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20250163082A1 (en) | 2025-05-22 |
| KR20260113269A (en) | 2026-07-21 |
| CN122341775A (en) | 2026-07-03 |
| TW202536234A (en) | 2025-09-16 |
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