WO2025072007A1 - Finding substrate notch on substrate between platens in chemical mechanical polishing - Google Patents
Finding substrate notch on substrate between platens in chemical mechanical polishing Download PDFInfo
- Publication number
- WO2025072007A1 WO2025072007A1 PCT/US2024/047248 US2024047248W WO2025072007A1 WO 2025072007 A1 WO2025072007 A1 WO 2025072007A1 US 2024047248 W US2024047248 W US 2024047248W WO 2025072007 A1 WO2025072007 A1 WO 2025072007A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- sensor
- signal
- station
- notch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
Definitions
- the filler layer is planarized until the top surface of a patterned layer is exposed.
- a conductive filler layer for example, can be deposited on a patterned insulative layer to fill the trenches or holes in the insulative layer. After planarization, the portions of the metallic layer remaining between the raised pattern of the insulative layer form vias, plugs, and lines that provide conductive paths between thin film circuits on the substrate.
- oxide polishing the filler layer is planarized until a predetermined thickness is left over the non-planar surface.
- planarization of the substrate surface is usually required for photolithography. Chemical mechanical polishing (CMP) is one accepted method of planarization.
- This planarization method typically requires that the substrate be mounted on a carrier or polishing head.
- the exposed surface of the substrate is typically placed against a rotating polishing pad.
- the carrier head provides a controllable load on the substrate to push it against the polishing pad.
- An abrasive polishing slurry is typically supplied to the surface of the polishing pad.
- a polishing apparatus includes a plurality of stations including a first station that is a polishing station or a transfer station and a second station that is a polishing station, a carrier head to hold a substrate and that is movable by an actuator along a path from the first station to the second station, a motor to rotate the carrier head about an axis of Attorney Docket No.44022684WO01; 05542-1595WO1 rotation, a notch finding station positioned on the path between the first station and the second station where the notch finding station includes a sensor to generate a signal that depends on an proportion of a sensing region of the sensor that is covered by the substrate, and a controller.
- the controller is configured to cause the actuator to position the carrier head such that the substrate is positioned at the notch finding station such that sensing region of the sensor is at an edge of the substrate, cause the motor to rotate the carrier head such that the sensing region of the sensor scans along a circumference of the substrate, and detect an angular position of a notch in an edge of the substrate based on a signal from the sensor, including compensating for a sinusoidal component of the signal resulting from an offset of the center of the substrate from the axis of rotation.
- a method in another aspect, includes holding a substrate in a carrier head with the substrate positioned such that a sensing region of a sensor of a notch finding station is at an edge of the substrate, rotating the carrier head to rotate the substrate such that the sensing region of the sensor scans along a circumference of the substrate, and detecting an angular position of a notch in an edge of the substrate based on a signal from the sensor, including compensating for a sinusoidal component of the signal resulting from an offset of the center of the substrate from the axis of rotation.
- a notch finding station in another aspect, includes a sensor to generate a signal that depends on an proportion of a sensing region of the sensor that is covered by a substrate, and a controller is configured to cause an actuator to position a carrier head relative to the substrate with the sensing region of the sensor at an edge of the substrate, cause a motor to generate relative motion between the carrier head and the sensor such that the sensing region of the sensor scans along a circumference of the substrate, and detect an angular position of a notch in the edge of the substrate based on a signal from the sensor, including compensating for a sinusoidal component of the signal resulting from an offset of the center of the substrate from the axis of rotation. Implementations may include one or more of the following potential advantages.
- the angular position of a substrate relative to the carrier head can be determined, and the carrier head can rotate to place the substrate notch in a desired angular position. Polishing can be performed more consistently on a wafer-to-wafer basis, thus reducing wafer-to-wafer non-uniformity (WTWNU). In-situ monitoring can be more reliable, thus Attorney Docket No.44022684WO01; 05542-1595WO1 improving both within-wafer uniformity (WIWU) and wafer-to-wafer uniformity (WTWU).
- WIWU within-wafer uniformity
- WTWU wafer-to-wafer uniformity
- FIG.1 is a schematic plan view of an example of a polishing apparatus.
- FIG.2 is a schematic cross-sectional view of an example of a polishing apparatus.
- FIG.3 is a schematic side view of an example of an inter-platen notch finder.
- FIGS.4A and 4B are schematic top views of substrates with different notches.
- FIG.5 is a schematic bottom view of a substrate and a retaining ring showing a path of a scanning spot along a circumference of the substrate.
- FIG.6 is an illustrative graph of intensity of reflected light as a function of the angular position of the carrier head.
- FIG.7 is a schematic side view of another example of an inter-platen notch finder that includes two light sources.
- FIG.8 is a schematic side view of another example of an inter-platen notch finder that includes a camera.
- FIG.9 is a schematic side view of another example of an inter-platen notch finder that directs a light beam through a water column.
- FIG.10 is a schematic side view of another example of an inter-platen notch finder that submerges a face of the substrate in a liquid bath.
- DETAILED DESCRIPTION In some polishing operations the substrate is held by a rotating carrier head and pressed against the rotating polishing pad. Rotation of the carrier head imparts rotation to the substrate.
- a consistent angular orientation improves the likelihood that a sensor scans each substrate on a repeatable path, so that the resulting signal is consistently positioned on the same portion of the substrate as a function of time on a wafer-to-wafer basis. This in turn improves reliability of a pressure control algorithm, which can improve both within-wafer uniformity (WIWU) and wafer-to-wafer uniformity.
- WIWU within-wafer uniformity
- a carrier head could simply rotate to a preset angular orientation before polishing commences, e.g., before the substrate is lowered into contact with the polishing pad.
- the angular orientation of the substrate relative to the carrier head may not stay constant; the substrate can be subject to a “precession” effect in which the substrate rotates relative to the carrier head.
- simply relying on the carrier head orientation e.g.,. as measured by a motor encoder, may not be sufficient.
- a technique to address this problem is to measure the angular orientation of the substrate before a polishing operation or between two separate polishing operations, e.g., at a station positioned between two platens of the polishing system.
- a light beam can be directed at the edge of the substrate, a detector can measure an intensity of the reflected light, and the carrier head can rotate.
- the carrier head can rotate.
- the notch passes through the illuminated spot, the amount of reflected light should change, e.g., drop.
- the center of the substrate may not be precisely aligned with the axis of rotation of the carrier head.
- merely rotating the carrier head to scan a sensor around the circumference of the substrate may not work. For example, the sensor may move outside the radius of the substrate, resulting in a loss of signal.
- FIG.1 is a plan view of a chemical mechanical polishing apparatus 100 for processing one or more substrates.
- the polishing apparatus 100 includes a plurality of polishing stations 110.
- the polishing apparatus can include three polishing stations 110a, 110b, and 110c.
- the polishing apparatus 100 also includes at least one carrier head 140, e.g., four carrier heads 140.
- the polishing apparatus 100 also includes a transfer station 104 for loading and unloading substrates from the carrier heads 140.
- the stations of the polishing apparatus 100 including the transfer station 104 and the polishing stations 110, can be positioned at substantially equal angular intervals around the center of the platform 106.
- each polishing station 110 includes a polishing pad 130 supported on a rotatable platen 120.
- the polishing pad 130 can be a two-layer polishing pad with an outer polishing layer 132 and a softer backing layer 134 (see FIG.2).
- a top surface of the polishing layer 132 can provide a polishing surface 136.
- one carrier head 140 is positioned at each polishing station 110.
- Another additional carrier head 140 can be positioned in the transfer station 122 to exchange a polished substrate for an unpolished substrate while the other substrates are being polished at the polishing stations 110.
- the carrier heads 140 are held by a support structure, e.g., a rotatable carousel or a carriage suspended from a track, that can cause carrier head to move along a 106 path that passes, in order, each polishing station 110a-110c and the transfer station 104.
- each polishing station 110 can include a port 160, e.g., at the end of an arm 162, to dispense polishing liquid 164, such as abrasive slurry, onto the polishing pad 130.
- Each polishing station 110 of the polishing apparatus 100 can also include pad conditioning apparatus 170 to abrade the polishing pad 130 to maintain the polishing surface 136 in a consistent abrasive state.
- the conditioning apparatus can include a conditioning head 172 with a conditioning disk at the end of an arm 174.
- the platen 120 at each platen 120 is operable to rotate about an axis 122.
- a motor 124 can turn a drive shaft 126 to rotate the platen 120.
- Each carrier head 140 is operable to hold a substrate 10 against the polishing pad 130.
- Each carrier head 140 can include a retaining ring 142 to retain the substrate 10 Attorney Docket No.44022684WO01; 05542-1595WO1 below a flexible membrane 144.
- Each carrier head 140 can also include a plurality of independently controllable pressurizable chambers defined by the membrane, e.g., three chambers 146a-146c, which can apply independently controllable pressurizes to associated zones on the flexible membrane 144 and thus on the substrate 10. Although only three chambers are illustrated in FIG.2 for ease of illustration, there could be one or two chambers, or four or more chambers, e.g., five chambers.
- Each carrier head 140 is suspended from the support structure 150, and is connected by a drive shaft 154 to a carrier head rotation motor 156 so that the carrier head can rotate about an axis 152.
- each carrier head 126 can oscillate laterally, e.g., driven by a carriage on the track, by a motor that oscillates the carrier head radially, or by rotational oscillation of the carousel itself.
- the platen is rotated about its central axis 121, and each carrier head is rotated about its central axis 127 and translated laterally across the top surface of the polishing pad.
- An in-situ monitoring system can include a sensor 180 installed in the platen 120 to monitor the progress of the polishing operation and/or measure a thickness of the layer on the substrate 10 that is being polished.
- the sensor 180 could be an optical sensor, e.g., a spectrometer, an eddy current sensor, a capacitive sensor, a friction sensor, etc.
- a controller 190 such as a programmable computer, is connected to each motor 126, 156 to independently control the rotation rate of the platen 120 and the carrier heads 140.
- each motor 156 can include an encoder 158 that measures the angular position or rotation rate of the associated drive shaft 154.
- the associated drive shafts can have respective reference angular positions that are recognized by the encoder 158 to measure the number of revolutions of the drive shafts.
- the controller 190 is also connected to pressure regulators to control the pressures in the chambers 146a-146c.
- the controller 190 can be configured to receive thickness measurements from the in-situ monitoring system and control the pressures in the chambers 146a-146c to provide improved polishing uniformity.
- the controller 190 can include a central processing unit (CPU) 192, a memory 194, and support circuits 196, e.g., input/output circuitry, power supplies, clock circuits, cache, and the like.
- the memory is connected to the CPU 192.
- the memory is a non- Attorney Docket No.44022684WO01; 05542-1595WO1 transitory computable readable medium, and can be one or more readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or other form of digital storage.
- RAM random access memory
- ROM read only memory
- floppy disk hard disk
- hard disk or other form of digital storage.
- controller 190 could be a distributed system, e.g., including multiple independently operating processors and memories.
- the polishing apparatus 100 can also include one or more notch-finding stations 200.
- a notch-finding station 200a is positioned on the path 106 at a spot between the transfer station 104 and a first polishing station, e.g., polishing station 110a.
- One or more notch-finding stations 200b, 200c can be positioned on the path 106 travelled by the carrier heads 140 between two polishing stations 200.
- the polishing system includes two inter-platen notch- finding stations 200b, 200c. The two inter-platen notch-finding stations 200b, 200c could be on the path 106 on opposite sides of a polishing station, e.g., the second polishing station 110b.
- the substrate orientation is measured at a notch- finding station 200 located before a polishing station 110 along the path 106, and then moved forward along the path 106 to the polishing station 110 and polished at that polishing station 110.
- the substrate orientation can be measured at a notch-finding station 200 located after a polishing station 110 along the path 106, and then moved backward along the path 106 to the polishing station 110 and polished at that polishing station 110. The substrate can then be moved forward again along the path 106 to the next polishing station, optionally stopping at the notch- finding station 200 before being polished at the next polishing station.
- FIG.3 illustrates an implementation of a notch finding station 200 positioned between two platens 120 of two polishing stations 110 that are adjacent along the path.
- This implementation of the notch finding station 200 has an optical notch detector 210 that includes a light source 212, a light detector 214, and circuitry 216 for sending and receiving signals between the controller 190 and the light source 212 and light detector 214.
- the optical notch detector 210 can also be considered to include some of the functionality implemented, e.g., software, in the controller 190.
- the light source 212 is located such that a carrier head 140 can be positioned on the path 106 where the substrate 100 can scanned by the optical notch detector 210.
- the light source 212 generates a light beam 220 that can be reflected by the substrate 10, and the light detector 214 is positioned to receive a reflected light beam 222 from the substrate 10.
- the light detector 214 can be positioned where the light beam 220 and reflected light beam 22 have equal incidence angles, e.g., such that the light detector 214 is receiving reflected (rather than scattered) light.
- the angle of incidence on the substrate 10 can be normal to the substrate surface, or an oblique angle up to 80o, .e.g., 30o or 45o.
- FIG.2 illustrates the light beam 220 travelling in a straight line to the substate 10, one or more mirrors can be positioned in the optical path of the light beam 220.
- the light source 212 can generate substantially monochromatic light and/or collimated light.
- the light source 212 can be a laser, e.g. in the visible wavelength range of 400-700 nm, as this can make alignment of the sensor easier. However, wavelengths in infrared range or ultraviolet range can be used.
- the light source 212 can be operable to emit white light.
- the light source 212 can be is a xenon lamp or a xenon mercury lamp.
- the light detector 164 can be a photodetector, e.g., a detector that outputs a simple scalar signal indicating total light intensity. Alternatively, the light detector 164 can output multiple signals, each for a different wavelength range.
- one or more optical fibers can be used to transmit the light from the light source 212 to a position below the substrate, and/or transmit light reflected from the substrate 10 to the detector 214.
- a bifurcated optical fiber can be used to transmit the light from the light source 212 to the substrate 10 and back to the detector 214.
- the notch finding station 200 can include a mechanism to adjust the vertical height of the optical component from which the light beam passes directly to the substrate 10.
- the optical components, including mirrors if present, can be supported on an optical plate or frame 240.
- a actuator 242 can adjust the vertical position of the optical plate or frame 240.
- the actuator 242 can also include an XY actuator system that includes two independent linear actuators to move the optical Attorney Docket No.44022684WO01; 05542-1595WO1 plate or frame 240 independently along two orthogonal axes. If an optical fiber is used, then the actuator 242 can adjust a position of an end of the fiber.
- a shield 230 can be positioned between the carrier head 140 and the optical components of the optical notch detector 210, e.g., the light source 212 and detector 214, to prevent liquid that may be present on the substrate 10 or retaining ring 142 from dripping on and contaminating the optical components.
- the light beam 220 and reflected light beam 222 pass through a window 232 in a shield 230.
- the top surface of the shield 230 can be coplanar with the top surfaces of the platen(s) 120.
- purge gas 234 can be directed from an outlet 236 to flow across the bottom surface of the window 232. This can remove droplets from the bottom of the window 232 and prevent condensation and fogging of the window 232.
- the purge gas can be nitrogen or filtered air. Alternatively or in addition, a purge gas can be directed onto the impingement spot 224.
- the purge gas can be humid gas, e.g., generated by passing deionized water and filtered air through an atomizer.
- the output of the circuitry 216 can be a digital electronic signal that passes to the controller 190 for analysis.
- the light source 212 can be turned on or off in response to control commands in digital electronic signals that pass from the controller 190 to the optical notch detector 210.
- the circuitry 216 could communicate with the controller 190 by a wireless signal.
- a consistent starting angular position can improve the likelihood that the sensor 180 traces a consistent series of paths across the substrate on a wafer-to-wafer basis, thus making processing of the signal from the in-situ monitoring system more reliable.
- Attorney Docket No.44022684WO01; 05542-1595WO1 The substrate 10 to be polished generally includes a notch that allows the substrate 10 to be angularly oriented, for example, by a specific angle from the notch.
- the fiducial is generally defined by removal of a portion of the substrate.
- a circular substrate 10 can have a notch 12 formed by the removal of a portion from the edge 14 of the substrate.
- the substrate 10 can have a diameter D1 of 200 mm or 300 mm.
- the notch 12 can be triangular in shape.
- Such a notch 12 can be relatively small, e.g., no more than 1 mm in depth from the substrate edge 14 and no more that 1 mm wide along the circumference (the size is significantly exaggerated in FIG.4A for clarity).
- the notch 12 ⁇ can be a “flat.”
- the carrier head 140 is positioned in the notch finding station 200 with the substrate 10 positioned above and spaced apart from the optical components of the at the optical notch detector 210.
- the carrier head 140 is positioned such that the light beam 220 impinges the substrate 10 in an impingement spot 224 that contacts or overlaps the substrate edge 16.
- the carrier head 140 rotates so that the substrate 10 rotates, thus sweeping the light beam along the circumference of the substrate 10. Since the membrane 144 will have a different reflectivity than the substrate 10, the signal from the detector 214 should change when the notch 12 passes across the light beam 220. Hypothetically, the scan of the light beam along the circumference of the substrate would result in a uniform signal, except for change where the notch is located. However, in practice, the situation is complicated. First, during the loading operation at the transfer station, the center of the substrate may not be precisely aligned with the axis of rotation of the carrier head.
- the substrate 10 can be driven laterally by frictional force from the polishing pad into contact with the retaining ring 142.
- the center point 16 of the substrate 10 can be offset from the axis of rotation 152 of the carrier head.
- This results the substrate edge 14 being closer to the inner diameter surface 143 of the retaining ring 142 in one region, e.g., at point 18a, and farther from the inner diameter surface 143 of the retaining ring 142 at an opposite region, e.g., at point 18b.
- This difference can be larger than the depth of the notch 12, e.g., 0.5-4 mm.
- the Attorney Docket No.44022684WO01; 05542-1595WO1 light beam needs to be wide enough that the notch 12 will fall within the impingement spot 224, regardless of the angular position of the substrate 10 relative to the carrier head 140.
- the impingement spot 224 may need to have a radial width of about 1-10 mm, e.g., a diameter D2 of 5-10 mm for a circular impingement spot.
- the carrier head is positioned such that impingement spot 224 does not overlap the retaining ring 142 of the carrier head.
- the carrier head can be positioned such that impingement spot 224 overlaps the retaining ring 142.
- the retaining ring will contribute to the signal from the signal. However, since the retaining ring rotates about the axis of rotation 152, this contribution should be constant with the angular orientation of the carrier head.
- the impingement spot 224 of the light beam will scan along the edge of the substrate 10 (shown by arrow A). As a result, the percentage of the impingement spot 224 that is reflected from the substrate 10 will vary with rotation of the carrier head.
- the membrane can be expected to have a lower reflectivity than the substrate 10. Thus, at angle ⁇ 1 where substrate 10 is farthest from the retaining ring 142, reflected light should be at a minimum I MIN .
- the reflected light should be at a maximum I MAX .
- the reflected light should vary between I MIN and I MAX , resulting in a signal from the sensor in the form of a sinusoidal wave 250 as shown in FIG.6.
- the substrate starts at angle ⁇ 0 with the reflected intensity first dropping and then increasing. But this is not required; the phase of the sinusoidal wave 250 relative to the starting position ⁇ 0 depends on the position of the closest point 18a along the circumference of the substrate 10.
- the intensity difference ⁇ I of this drop can be smaller than the amplitude (I MAX - I MIN ) of the sinusoidal wave 250.
- Attorney Docket No.44022684WO01; 05542-1595WO1 a variety of techniques can still be used to detect this drop 252 in signal intensity, and thus the angular position ⁇ X of the notch 12.
- the first derivative of the reflected light intensity signal can be monitored, and the controller can detect where the first derivate exceeds a threshold value.
- the first derivate exceeds the threshold value indicates the presence of the notch 12.
- the second derivative of the reflected light intensity signal can be monitored, and the controller can detect where the second derivate exceeds a threshold value. Where the second derivate exceeds the threshold value indicates the presence of the notch 12. can be used to indicate the presence of the notch 12.
- a sinusoidal function can be fit to the signal from the sensor, this sinusoidal function can be subtracted from the signal, and then the resulting differential can be analyzed to detect the drop 252.
- the signal can be subject to a high-pass filter.
- FIG.6 illustrates a smooth sinusoidal wave 250, in practice the signal may be subject to noise.
- distortions or noise examples include passage of the sensing across a portion of the retaining ring (or edge of the carrier head), the presence of water droplets in the case of dry measurements or the presence of air bubbles in the case of wet measurements, wafer pattern noise, and electrical/sensor noise as well as mechanical and alignment noise. These can be partially or completely filtered out with proper signal processing.
- the signal may be subject to one or more filters, e.g., a low- pass filter.
- the encoder for the drive shaft 156 outputs a signal indicating the angular position of some arbitrary (but fixed) point on the drive shaft.
- the angular offset ⁇ of the notch 12 relative to the carrier head can be calculated.
- the carrier head can be rotated to bring the substrate 10 into a desired starting substrate angular orientation ⁇ D before the polishing process, e.g., before lowing the substrate 10 into contact with the polishing pad.
- FIG.7 shows an implementation of an optical notch detector 210 that includes two light sources 212a, 212b that generate light beams of different wavelengths, and a beam combiner 246 to combine the light beams into a single incident beam 220.
- a first light source 212a can generate infrared light
- a second light source 212b can generate blue light.
- noise from the pattern can be reduced.
- the controller 190 cause the optical notch detector 210 to scan the substrate 10 using each light source 212a, 212b sequentially, and then determine which light source provides a signal with the lower noise.
- light sources could be combined or selected individually to achieve better performance.
- the controller 190 can then use that light source or sources for monitoring of other substrates with the same pattern. That is, the controller 190 maintain a database that stores identifying information for different patterns, with each pattern having an associate light source(s) or wavelength.
- FIG.8 shows an implementation of an optical notch detector 210 that includes a camera 260 with a field of view 262 of the substrate 10.
- the camera 260 can take an image or a sequence of images of substrate 10 when the substrate is at the notch detection station 20.
- the view of view 262 spans the entire substrate 10. However, if the field of view is smaller than the substrate 10, then a combination of images may be used to construct a full substrate image; this may involve rotation and scanning of carrier head.
- Image processing techniques can be used by the controller 190 on the image or sequence of images to determine the position of the notch and thus the angular orientation of the substrate 10. In some implementations, image processing techniques can then be used by the controller 190 to determine the angular orientation of the pattern, e.g., the scribe lines and dies, of the substrate. This can provide an initial estimation of the angular orientation of the substrate, which can then be refined by detection of the notch position.
- FIG.9 shows an optical notch detector that directs the light beam 220 through a water column.
- a bifurcated optical fiber has two bifurcated ends Attorney Docket No.44022684WO01; 05542-1595WO1 that are connected to the light source and detector, respectively, and a trunk 270 that is situated inside a tube 272.
- a liquid 274, e.g., de-ionized water, can be pumped from a liquid source 276 into and through the tube 272.
- the substrate 10 can positioned over the trunk end of the optical fiber.
- the height of the substrate 10 relative to the top of the tube 272 and the flow rate of the liquid 274 is selected such that as the liquid 274 overflows the tube 272, the liquid 274 fills the space between the end 270 of the optical fiber and the substrate 10.
- FIG.10 shows an optical notch detector 210 in which at least the face of the substrate is lowered into a reservoir 280.
- the notch finding station 200 includes a housing or tub 292 which is holds a liquid 294.
- the thickness of the substrate 10 is exaggerated in FIG.10; in practice it is likely that the back surface of the substrate would be below the surface 284a of the liquid 284 of the reservoir 280.
- the trunk end 270 of the optical fiber can extend through the housing 292 into the reservoir 280 to be positioned near the edge of the substrate 10.
- a notch detector in operation, light travels from the light source, travels through the liquid 274 or 284 to the surface of the substrate 10, is reflected from the surface of the substrate 10, enters the trunk end 270 of the optical fiber, and returns to the detector.
- a notch detector can use other types of sensors.
- the notch detector can use confocal microscopy or laser displacement measurements.
- a confocal microscope or a laser displacement sensor can be used to measure a height profile in a region that scans along the circumference of the substrate.
- the notch detector can use a capacitive sensing technique.
- the notch detector a capacitive sensor, and a capacitive signal resulting Attorney Docket No.44022684WO01; 05542-1595WO1 from scanning the sensor along the circumference of the substrate can be analyzed to detect the notch.
- the above described polishing apparatus and methods can be applied in a variety of polishing systems.
- the platen may orbit rather than rotate.
- the polishing pad can be a circular (or some other shape) pad secured to the platen.
- the polishing layer can be a standard (for example, polyurethane with or without fillers) polishing material, a soft material, or a fixed-abrasive material.
- the controller and other computing devices part of systems described herein can be implemented in digital electronic circuitry, or in computer software, firmware, or hardware.
- the controller can include a processor to execute a computer program as stored in a computer program product, e.g., in a non-transitory machine- readable storage medium.
- Such a computer program (also known as a program, software, software application, or code) can be written in any form of programming language, including compiled or interpreted languages, and it can be deployed in any form, including as a standalone program or as a module, component, subroutine, or other unit suitable for use in a computing environment.
- “configured” indicates that the controller has the necessary hardware, firmware or software or combination to perform the desired function when in operation (as opposed to simply being programmable to perform the desire function).
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202480062452.4A CN122029003A (en) | 2023-09-29 | 2024-09-18 | Seeking substrate grooves on a substrate between lands in chemical mechanical polishing |
| KR1020267013628A KR20260083382A (en) | 2023-09-29 | 2024-09-18 | Search for substrate notches on the substrate between platens in chemical mechanical polishing |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18/478,649 US20250108474A1 (en) | 2023-09-29 | 2023-09-29 | Finding substrate notch on substrate between platens in chemical mechanical polishing |
| US18/478,649 | 2023-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2025072007A1 true WO2025072007A1 (en) | 2025-04-03 |
Family
ID=95157233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2024/047248 Ceased WO2025072007A1 (en) | 2023-09-29 | 2024-09-18 | Finding substrate notch on substrate between platens in chemical mechanical polishing |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250108474A1 (en) |
| KR (1) | KR20260083382A (en) |
| CN (1) | CN122029003A (en) |
| TW (1) | TWI916978B (en) |
| WO (1) | WO2025072007A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030003845A1 (en) * | 2000-01-18 | 2003-01-02 | Adams Bret W. | Optical monitoring in a two-step chemical mechanical polishing process |
| US20040152396A1 (en) * | 2003-02-04 | 2004-08-05 | Applied Materials, Inc | Substrate monitoring during chemical mechanical polishing |
| US20050042975A1 (en) * | 2003-08-18 | 2005-02-24 | Applied Materials, Inc. | Platen and head rotation rates for monitoring chemical mechanical polishing |
| CN1809444A (en) * | 2003-06-18 | 2006-07-26 | 株式会社荏原制作所 | Substrate polishing apparatus and substrate polishing method |
| US20160256978A1 (en) * | 2015-03-05 | 2016-09-08 | Applied Materials, Inc. | Acoustic Emission Monitoring and Endpoint for Chemical Mechanical Polishing |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6690473B1 (en) * | 1999-02-01 | 2004-02-10 | Sensys Instruments Corporation | Integrated surface metrology |
| US6673637B2 (en) * | 2000-09-20 | 2004-01-06 | Kla-Tencor Technologies | Methods and systems for determining a presence of macro defects and overlay of a specimen |
| US7306507B2 (en) * | 2005-08-22 | 2007-12-11 | Applied Materials, Inc. | Polishing pad assembly with glass or crystalline window |
| US8930013B2 (en) * | 2010-06-28 | 2015-01-06 | Applied Materials, Inc. | Adaptively tracking spectrum features for endpoint detection |
| US20140242883A1 (en) * | 2013-02-27 | 2014-08-28 | Applied Materials, Inc. | Determination of wafer angular position for in-sequence metrology |
| US10744617B2 (en) * | 2015-10-16 | 2020-08-18 | Ebara Corporation | Polishing endpoint detection method |
| JP7575309B2 (en) * | 2021-03-17 | 2024-10-29 | 株式会社荏原製作所 | Film thickness measuring method, notch portion detecting method, and polishing apparatus |
| US12322662B2 (en) * | 2021-05-28 | 2025-06-03 | Applied Materials, Inc. | Displacement measurements in semiconductor wafer processing |
| US11764069B2 (en) * | 2021-06-01 | 2023-09-19 | Applied Materials, Inc. | Asymmetry correction via variable relative velocity of a wafer |
| US12703057B2 (en) * | 2023-03-17 | 2026-08-11 | Applied Materials, Inc. | Method for detection of wafer slippage |
-
2023
- 2023-09-29 US US18/478,649 patent/US20250108474A1/en active Pending
-
2024
- 2024-09-18 KR KR1020267013628A patent/KR20260083382A/en active Pending
- 2024-09-18 WO PCT/US2024/047248 patent/WO2025072007A1/en not_active Ceased
- 2024-09-18 CN CN202480062452.4A patent/CN122029003A/en active Pending
- 2024-09-20 TW TW113135711A patent/TWI916978B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030003845A1 (en) * | 2000-01-18 | 2003-01-02 | Adams Bret W. | Optical monitoring in a two-step chemical mechanical polishing process |
| US20040152396A1 (en) * | 2003-02-04 | 2004-08-05 | Applied Materials, Inc | Substrate monitoring during chemical mechanical polishing |
| CN1809444A (en) * | 2003-06-18 | 2006-07-26 | 株式会社荏原制作所 | Substrate polishing apparatus and substrate polishing method |
| US20050042975A1 (en) * | 2003-08-18 | 2005-02-24 | Applied Materials, Inc. | Platen and head rotation rates for monitoring chemical mechanical polishing |
| US20160256978A1 (en) * | 2015-03-05 | 2016-09-08 | Applied Materials, Inc. | Acoustic Emission Monitoring and Endpoint for Chemical Mechanical Polishing |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202528090A (en) | 2025-07-16 |
| US20250108474A1 (en) | 2025-04-03 |
| KR20260083382A (en) | 2026-06-05 |
| CN122029003A (en) | 2026-05-12 |
| TWI916978B (en) | 2026-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101715726B1 (en) | Using optical metrology for feed back and feed forward process control | |
| US10401285B2 (en) | Apparatus for measuring surface properties of polishing pad | |
| US9095952B2 (en) | Reflectivity measurements during polishing using a camera | |
| KR100465929B1 (en) | Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device | |
| US9227293B2 (en) | Multi-platen multi-head polishing architecture | |
| KR100305537B1 (en) | Polishing method and polishing device using it | |
| US7008295B2 (en) | Substrate monitoring during chemical mechanical polishing | |
| KR20010078154A (en) | Endpoint monitoring with polishing rate change | |
| US11869815B2 (en) | Asymmetry correction via oriented wafer loading | |
| KR100238938B1 (en) | Polishing system | |
| US20140242883A1 (en) | Determination of wafer angular position for in-sequence metrology | |
| US20140141694A1 (en) | In-Sequence Spectrographic Sensor | |
| US9056383B2 (en) | Path for probe of spectrographic metrology system | |
| JPH09298176A (en) | Polishing method and polishing apparatus using the same | |
| US20250108474A1 (en) | Finding substrate notch on substrate between platens in chemical mechanical polishing | |
| US20250153309A1 (en) | Signal processing for finding substrate notch | |
| US20140093987A1 (en) | Residue Detection with Spectrographic Sensor | |
| KR20240155792A (en) | Film thickness measuring device, film thickness measuring method, and substrate polishing device | |
| US20260061554A1 (en) | Finding substrate notch on substrate in a chemical mechanical polishing system | |
| US20260061553A1 (en) | Finding substrate notch on substrate in a chemical mechanical polishing system | |
| JPH09298174A (en) | Polishing method and polishing apparatus using the same | |
| JPH09298175A (en) | Polishing method and polishing apparatus using the same | |
| WO2026049750A1 (en) | In-situ monitoring system with substrate held by carrier in chemical mechanical polishing | |
| JP2005294367A (en) | CMPin-situ monitoring device | |
| JP2003347259A (en) | Polishing end point detection method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 24873335 Country of ref document: EP Kind code of ref document: A1 |
|
| ENP | Entry into the national phase |
Ref document number: 2026519291 Country of ref document: JP Kind code of ref document: A |
|
| WWE | Wipo information: entry into national phase |
Ref document number: 2026519291 Country of ref document: JP |
|
| ENP | Entry into the national phase |
Ref document number: 1020267013628 Country of ref document: KR Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A15-NAP-PA0105 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |