WO2025007772A1 - 一种加热装置及半导体处理设备 - Google Patents

一种加热装置及半导体处理设备 Download PDF

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Publication number
WO2025007772A1
WO2025007772A1 PCT/CN2024/101242 CN2024101242W WO2025007772A1 WO 2025007772 A1 WO2025007772 A1 WO 2025007772A1 CN 2024101242 W CN2024101242 W CN 2024101242W WO 2025007772 A1 WO2025007772 A1 WO 2025007772A1
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Prior art keywords
base
heating
reflective
annular
heating device
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Ceased
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PCT/CN2024/101242
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English (en)
French (fr)
Inventor
高雄
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to KR1020257040138A priority Critical patent/KR20260003257A/ko
Publication of WO2025007772A1 publication Critical patent/WO2025007772A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps

Definitions

  • the present application relates to the technical field of semiconductor manufacturing equipment, and in particular to a heating device and semiconductor processing equipment.
  • Chemical Vapor Deposition (CVD) silicon epitaxy is the use of CVD technology to grow a silicon film on the surface of a silicon-based substrate (such as a wafer). Specifically, the reaction gas is controlled to flow through the heated wafer, and the reactants undergo a chemical reaction on the wafer surface to generate silicon, and then a layer of silicon film is formed on the wafer surface.
  • CVD Chemical Vapor Deposition
  • FIG1 The structural schematic diagram of an existing CVD epitaxial device is shown in FIG1 , wherein the top plate and the bottom plate of the process chamber 10a are made of transparent materials, and an upper heating device 20a and a lower heating device 30a based on infrared light heating are respectively arranged on the upper and lower sides of the process chamber 10a.
  • the substrate 101a is placed on the susceptor 11a in the process chamber 10a, the upper heating device 20a directly heats the surface of the substrate 101a, and the lower heating device 30a heats the susceptor 11a to indirectly heat the substrate 101a.
  • the temperature distribution on the surface of the substrate 101a has a significant impact on the thickness, resistivity, and slip line distribution of silicon epitaxy.
  • the epitaxial layer growth rate is high in the area with high temperature, and its thickness is relatively thick.
  • the lower heating device 30a directly heats the base 11a, and the substrate 101a is indirectly heated by heat conduction through the base 11a, the heat is distributed more evenly during the conduction process.
  • the light of the upper heating device 20a directly irradiates the substrate 101a, and the light distribution of the upper heating device 20a will play a leading role in the temperature distribution on the surface of the substrate 101a.
  • the existing upper heating device 20a has the problem of large local temperature difference and uneven temperature field on the surface of the substrate 101a.
  • the present application provides a heating device and a semiconductor processing equipment, which can improve the problem of uneven temperature field generated by the existing upper heating device.
  • an embodiment of the present application provides a heating device for heating a susceptor in a semiconductor chamber, wherein the heating device is located on one side of the susceptor in a height direction, and the heating device has a central area and a plurality of annular areas sequentially surrounding the central area from the central area outward;
  • the heating device comprises a plurality of heating lamps uniformly arranged along the circumference of each annular region and an annular reflecting plate located on a side of the plurality of heating lamps away from the base; and a reflecting assembly located on a side of each annular region close to the central region; the reflecting assembly comprises a plurality of reflecting plates corresponding to the plurality of heating lamps in the corresponding annular region;
  • the reflective plate extends from the annular reflective plate toward the base to limit the light of the corresponding heating lamp to be irradiated within a preset area of the base;
  • the reflective assembly is used to make the preset areas corresponding to the multiple heating lamps located within different radial ranges of the base; wherein the central axis of the annular area is coaxial with the central axis of the base.
  • each of the reflective plates in the reflective assembly is parallel to the central axis of the base; or,
  • each of the reflective plates and the central axis of the base are the same.
  • the plurality of heating lamps belonging to the same annular region have the same height
  • the distance between one end of the reflective plate close to the base and the base is the first height of the reflective plate, and the first heights of the multiple reflective plates belonging to the same reflective assembly are not completely the same.
  • any two adjacent reflective plates The first heights are different.
  • the heating device further includes a driver for adjusting the height of each of the reflective plates.
  • the plurality of heating lamps belonging to the same annular region have the same height
  • the distance between one end of the reflective plate close to the base and the base is the first height of the reflective plate, and the first heights of the multiple reflective plates belonging to the same reflective assembly are the same;
  • each of the reflective components at least a portion of the reflective plates are provided with light-through holes, and the distance between the light-through holes and the base is smaller than the distance between the corresponding heating lamps and the base.
  • the distances between two adjacent light-through holes and the base are different.
  • the distance between the heating lamp in the outer annular region and the base is smaller than the distance between the heating lamp in the inner annular region and the base.
  • the first height of the reflective plate in the outer annular region is smaller than the first height of the reflective plate in the inner annular region.
  • the reflective component in each of the annular regions, is symmetrical about the center of the annular region.
  • the heating device further comprises a circular reflecting plate disposed in the central area, and the reflecting assembly located in the innermost annular area is disposed around the circular reflecting plate;
  • the distance between the circular reflective plate and the base is greater than the first height of any reflective plate in the reflective assembly located in the innermost annular area.
  • an embodiment of the present application provides a semiconductor processing device, including a semiconductor chamber, It also includes a heating device as described in the above embodiments located above the semiconductor chamber and/or below the semiconductor chamber, and the heating device is used to heat the base in the semiconductor chamber during the process.
  • the annular reflector is arranged on the side of the heating lamp away from the base, and the reflector assembly is arranged on the side of the annular area close to the central area.
  • the heating lamp is surrounded and reflected by the annular reflector and the reflector assembly, and irradiates in the direction of the base to heat the base.
  • the light emitted downward by the entire heating device tends to form a plurality of apertures, which can realize independent control of the light intensity at different radial positions.
  • the reflector assembly includes a plurality of reflectors corresponding to the plurality of heating lamps in the corresponding annular area
  • the reflector extends from the annular reflector toward the base, and each reflector can limit the light of the corresponding heating lamp to the preset area of the base, so that the same circle of heating lamps can be irradiated to positions of different radii, avoiding the light from being concentrated in the same area and causing the light to be distributed in a cliff-like manner along the radial direction, so that a gradual change in light intensity can be realized, thereby improving the uniformity of heating.
  • FIG1 is a schematic structural diagram of an existing CVD epitaxial device
  • FIG2 is a schematic diagram of the structure of an upper heating device provided in a comparative example of the present application (bottom view);
  • FIG3 is a schematic diagram of the structure of a heating device provided in an embodiment of the present application (bottom view);
  • FIG4 is an expanded cross-sectional view of the reflective assembly corresponding to the outer ring heating lamp in FIG3 ;
  • FIG5 is a side view of the structure of FIG3;
  • FIG6 is a schematic diagram of the structure of a semiconductor processing device provided in an embodiment of the present application.
  • FIG7 is a schematic diagram of a structure in which notches of different depths are arranged on a reflective plate provided in an embodiment of the present application;
  • FIG8 is a schematic diagram of a top view of a reflective assembly provided in an embodiment of the present application.
  • FIG9 is a schematic structural diagram of light-through holes at different heights arranged on a reflector provided in an embodiment of the present application.
  • FIG. 10 is an expanded cross-sectional view of the reflective assembly corresponding to the outer ring heating lamp in FIG. 5 .
  • A, B, C means “any one of the following: A; B; C; A and B; A and C; B and C; A and B and C
  • A, B or C or "A, B and/or C” means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C”. Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.
  • first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other.
  • first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information.
  • second information may also be referred to as the first information.
  • singular forms "a”, “an”, and “the” are intended to include the plural forms as well, unless otherwise indicated in the context.
  • orientations or positional relationships indicated by terms such as “top”, “bottom”, “up”, “down”, “vertical”, and “horizontal” are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
  • the orthogonal space formed by the horizontal plane and the vertical direction is used as an example for explanation, and this premise should not be understood as a limitation to the present application.
  • FIG. 2 is a schematic diagram (bottom view) of the structure of an upper heating device provided in the comparative example of the present application.
  • the upper heating device 20a includes a plurality of heating lamps 21a, and a reflective plate 22a disposed above and around the plurality of heating lamps 21a.
  • the reflector 22a is parallel to the base 11a of the process chamber 10a.
  • the reflector 22a can reflect the light emitted by the heating lamp 21a toward the reflector 22a toward the surface of the substrate 101a to improve the heating efficiency and the effective utilization of light.
  • the reflector 22a can enhance the light at certain radii due to reflection and weaken the light at other radii due to shielding, the above phenomenon will cause a significant difference in light on both sides of a specific radius position, resulting in a large local temperature difference and an uneven temperature field on the surface of the substrate 101a.
  • all the heating lamps 21a can be arranged in a circle, and a slope structure is set on the reflecting surface of the reflecting plate 22a for every three heating lamps 21a, so that the reflected light of a heating lamp 21a corresponding to the slope structure (the heating lamp is distinguished from other heating lamps by a section line) can be irradiated to the central area of the substrate 101a to adjust the distribution of light.
  • the only adjustable light is the reflected light of the heating lamp 21a corresponding to the inclined structure.
  • This solution can only adjust the temperature field slightly, and the process range that can be covered is small. Based on this, the present application provides a heating device and semiconductor processing equipment with adjustable temperature field distribution.
  • Figure 3 is a schematic diagram of the structure of a heating device provided in an embodiment of the present application (bottom view)
  • Figure 4 is an expanded cross-sectional view of the reflective assembly corresponding to the outer ring heating lamp in Figure 3
  • Figure 5 is a schematic diagram of the side view structure of Figure 3.
  • the heating device is used to heat the base in the semiconductor chamber. When the heating device is installed in the semiconductor chamber, it is arranged on one side of the base in the height direction. For example, please refer to Figure 6 at the same time.
  • the heating device can be arranged outside the semiconductor chamber 100 or inside the semiconductor chamber 100. It can be arranged directly above the base 130 or directly below the base 130, or there are two heating devices, which are arranged above and below the base 130 respectively.
  • the heating device has a central area 301 and a plurality of annular areas 302 that surround the central area 301 in sequence from the central area outward; wherein the heating device includes a plurality of heating lamps 40 uniformly arranged along the circumference of the annular area 302 in each annular area 302 and an annular reflector 10 located on the side of the plurality of heating lamps 40 away from the base 130. Specifically, if the heating device is arranged directly above the base 130, then the annular reflector 10 The reflective plate 10 is disposed above the plurality of heating lamps 40 ; if the heating device is disposed directly below the base 130 , the annular reflective plate 10 is disposed below the plurality of heating lamps 40 .
  • the heating device also includes a reflective component 30 located on the side of each annular area 302 close to the central area 301; the reflective component 30 includes a plurality of reflective plates 31 corresponding one by one to the plurality of heating lamps 40 in the corresponding annular area 302; the reflective plates 31 extend from the annular reflective plate 10 toward the direction of the base 130 to limit the light irradiation of the corresponding heating lamp 40 to the preset area of the base 130; the reflective component 30 is used to make the preset areas corresponding to the plurality of heating lamps 40 located within different radial ranges of the base; wherein the central axis of the annular area 302 is coaxial with the central axis of the base.
  • annular areas 302 (302A and 302B) as an example, which are an outer annular area 302A and an inner annular area 302B.
  • a plurality of heating lamps 40 are respectively arranged in the two annular areas 302.
  • 32 heating lamps 40A can be evenly arranged in the outer annular area 302A
  • 8 heating lamps 40B can be evenly arranged in the inner annular area 302B.
  • the number of heating lamps 40 arranged in each annular area 302 is set according to the heating needs.
  • the heating lamp 40 can be an infrared heating lamp.
  • annular reflection plates 10 may be provided, namely an annular reflection plate 10A corresponding to the outer annular area 302A, and an annular reflection plate 10B corresponding to the inner annular area 302B.
  • the annular reflection plate 10A on the side where the heating lamp 40A is away from the base 130 can reflect the light of the heating lamp 40A to the corresponding area of the base 130
  • the annular reflection plate 10B on the side where the heating lamp 40B is away from the base 130 can reflect the light of the heating lamp 40B to the corresponding area on the base 130.
  • two reflective components 30 are also provided, namely a reflective component 30A corresponding to the outer ring area 302A, and a reflective component 30B corresponding to the inner ring area 302B.
  • the reflective component 30B is arranged on the side of the inner ring area 302B close to the central area 301; the reflective component 30A is arranged on the side of the outer ring area 302A close to the central area 301.
  • the reflective assembly 30 includes a plurality of reflective plates 31 corresponding to the plurality of heating lamps 40 in the corresponding annular area 302.
  • the reflective plate 31 is The reflective assembly 30A.
  • the reflective assembly 30B includes 8 reflective plates 31.
  • the reflective plates 31 extend from the annular reflective plate 10 toward the base 130 to limit the light of the corresponding heating lamp 40 to be irradiated within a preset area of the base 130. That is, the reflective plates 31 can limit the irradiation range of the heating lamp 40 to the central area of the base 130 from the inside, and finally make the light of multiple heating lamps 40 irradiate within different radial ranges of the base 130.
  • the working principle of the heating device of this embodiment is as follows: the annular reflector plate 10 is arranged on the side of the heating lamp 40 away from the base 130, and the reflector assembly 30 is arranged on the side of the annular region 302 close to the central region 301.
  • the heating lamp 40 is surrounded and reflected by the annular reflector plate 10 and the reflector assembly 30, and irradiates in the direction of the base 130 to heat the base 130.
  • the light emitted downward by the entire heating device tends to form a plurality of apertures, and the independent control of the light intensity at different radial positions can be achieved.
  • each reflector plate 31 can limit the light of the corresponding heating lamp 40 to be irradiated within the preset area of the base 130, so that the same circle of heating lamps 40 can be irradiated to positions of different radii, avoiding the light from being concentrated in the same area and making the light distributed in a cliff-like manner along the radial direction, so that the gradual change of the light intensity can be achieved, and the uniformity of heating can be improved.
  • a reflective component 30 may be disposed around its outer diameter to confine the light of the heating lamp 40 within the heating device.
  • each reflective plate 31 in the reflective assembly 30 can be parallel to the central axis of the base 130, or can have the same angle with the central axis of the base 130, for example, each reflective plate 31 is inclined from top to bottom to the central axis of the base 130 at a preset angle (such as 10°), or is inclined away from the central axis of the base 130 at a preset angle.
  • a preset angle such as 10°
  • the installation height setting of the heating lamp 40, etc. it can be achieved that the same circle of heating lamps 40 irradiate positions of different radii of the base 130.
  • the heights of the multiple heating lamps 40 belonging to the same annular area 302 are the same.
  • the distance between the end of the reflector 31 close to the base 130 and the base 130 is the first height H of the reflector 31, and the first heights H of the multiple reflectors 31 belonging to the same reflective assembly 30 are not completely the same.
  • each reflector 31 can be set to form multiple notches 311, so that the reflective assembly 30 forms a sawtooth structure as shown in FIG. 4, for example, in the same annular area 302, a notch 311 is set for every other heating lamp 40A, and the projection of the notch 311 and the corresponding heating lamp 40A in the annular area 302 is located on the same radius.
  • the irradiation radius varies with the depth H0 of the notch 311.
  • the notch 311 on the reflector 31 can expand the irradiation radius of the heating lamp 40A, achieve a gradual change in light intensity, and improve heating uniformity.
  • the reflective assembly 30 can be an integrated structure, or can be formed by sequentially splicing a plurality of reflective plates 31, as shown in Figure 8. By setting the lengths of two adjacent reflective plates 31 in the vertical direction to be unequal, a notch 311 can be formed.
  • the embodiment of the present application does not particularly limit the specific molding method of the reflective assembly 30.
  • the depth H0 of the notch 311 can be different by setting the shape and height of the reflector 31, and the position of the notch 311 on the reflector assembly 30 can also be random and not periodic.
  • the shape of the notch 311 is not limited to the rectangular shape shown in the figure, for example, it can also be a triangle, an arc, or a combination of different shapes, etc.
  • any two adjacent reflective plates 31 have different first heights H, which can form a regular sawtooth structure to improve the uniformity of heating.
  • the reflective assembly 30 is preferably symmetrical about the center of the annular area 302, so that the heating lamps 40 located at symmetrical positions can heat the same radius range of the base 130, thereby making it possible to adjust the illumination range. Symmetrical adjustment is performed to improve the uniformity of the temperature field.
  • the first height of the reflector 31 of the outer annular region 302 is smaller than the first height of the reflector 31 of the inner annular region 302. This can prevent the heating lamp 40 from radiating outwards and reducing heating efficiency.
  • the distance L between the heating lamps 40 in the outer annular region 302 and the base 130 is smaller than the distance between the heating lamps 40 in the inner annular region 302 and the base 130. Since the position close to the center of the base 130 will be irradiated by more heating lamps 40, the inner heating lamps 40 are set farther from the base 130 to balance the uneven heating, thereby improving the heating uniformity of the base 130.
  • the heating device may further include a circular reflective plate 20 disposed in the central area 301, the reflective assembly 30 located in the innermost annular area 302 is disposed around the circular reflective plate 20, and the distance S between the circular reflective plate 20 and the base 130 is greater than the first height H of any reflective plate 31 in the reflective assembly 30 located in the innermost annular area 302.
  • Figure 6 is a schematic diagram of the structure of a semiconductor processing device provided in an embodiment of the present application.
  • Figure 7 is a schematic diagram of the structure of a reflective plate with notches of different depths provided in an embodiment of the present application.
  • the heating device provided in the present application is applied to the semiconductor processing device. Taking the case where the heating device is located above the base 130 as an example, the surface at a preset distance L0 below the circular ring area of the annular reflective plate 10 is set as the target plane 102.
  • the target plane 102 can be the top surface of the part to be heated (such as a substrate), that is, after the part to be heated is loaded onto the base 130, the distance between the top surface of the part to be heated and the bottom surface of the annular reflective plate 10 is L0.
  • the point on the target plane 102 that is directly opposite to the center of the annular area 302 is set as the center point O, and the intersection of the light emitted by the heating lamp 40 corresponding to the notch 311 through the notch 311 and the target plane 102 is set as the target point A.
  • the projection B of the heating lamp 40 corresponding to the notch 311 on the target plane 102 and the target point A are located on the same side of the center point O, as shown in view a of Figure 7.
  • the notches 311 are preferably arranged in pairs symmetrically relative to the center point O.
  • the figure shows a schematic diagram of two symmetrically located heating lamps 40 emitting light toward the target plane 102 through their respective corresponding notches 311. Through the notch 311, the irradiation radius of the corresponding heating lamp 40 can be expanded toward the center point O, avoiding that all light is irradiated on the same radius, and realizing a gradual change in light intensity.
  • the depth of at least one notch 311 can also satisfy that the projection B of the heating lamp 40 corresponding to the notch 311 on the target plane 102 and the target point A are located on both sides of the center point O, as shown in view c in Fig. 7.
  • the figure shows a schematic diagram of two symmetrically positioned heating lamps 40 emitting light to the target plane 102 through the corresponding notches 311. Since the notches 311 are deep, the heating lamp 40 can irradiate to the other side of the center point O through the corresponding notches 311, which can make the heating lamp 40 have a larger irradiation radius and realize a gradual change in light intensity.
  • the depth of at least one notch 311 can also satisfy that the target point A corresponding to the notch 311 coincides with the center point O, as shown in view b of Figure 7.
  • the figure shows a schematic diagram of two symmetrically positioned heating lamps 40 emitting light to the target plane 102 through the corresponding notches 311, and the heating lamps 40 just irradiate the center point O through the corresponding notches 311, that is, the target point A coincides with the center point O.
  • the depth of the notch 311 can be selected from the three settings corresponding to view a, view b, and view c in FIG7 . One of them can be selected, or two or three can be selected in combination.
  • the temperature field can be regulated by controlling the switch and power of the heating lamp 40 corresponding to different notches 311 .
  • the heights of the plurality of heating lamps 40 in the same annular region 302 are the same, and the first heights H of the plurality of reflective plates 31 in the same reflective assembly 30 are not completely the same.
  • the heating device may further include a driver 50, and the driver 50 is used to adjust the lifting of each reflective plate 31.
  • the driver 50 may be a motor.
  • the driver 50 may be connected to the reflective plate 31 one by one.
  • two heating lamps 40 in symmetrical positions can also be raised and lowered by the same driver 50.
  • the driver 50 can be used to raise and lower each reflector 31 to achieve a larger process coverage range.
  • the heating device may further include a controller 60 , which may individually control the switch and heating power of each heating lamp 40 , thereby adjusting the temperature field in a wider range.
  • a light-through hole 312 can also be provided on the reflective plate 31 to change the radial irradiation range of the heating lamp.
  • Figure 9 is a structural schematic diagram of light-through holes of different heights provided on a reflective plate provided in an embodiment of the present application
  • Figure 10 is an expanded cross-sectional view of the reflective assembly corresponding to the outer ring area in Figure 5.
  • the heights of the multiple heating lamps 40 belonging to the same ring area 302 are the same, and the first heights H of the multiple reflective plates 31 belonging to the same reflective assembly 30 are the same, which can simplify the manufacturing process of the reflective assembly 30; in each reflective assembly 30, at least part of the reflective plates 31 are provided with a light-through hole 312, and the distance between the light-through hole 312 and the base 130 is less than the distance between the corresponding heating lamp 40 and the base 130, which can ensure that the light of the heating lamp 40 can pass through the corresponding light-through hole 312 and irradiate downward to heat the base 130.
  • the heating lamp 40 can illuminate areas of different radii of the target plane 102, and as the height of the light holes 312 increases, the irradiation radius of the heating lamp 40 also changes accordingly.
  • the setting of the light holes 312 can expand the irradiation range of the heating lamp 40 on the target plane 102, avoiding the local concentrated distribution of the heating lamps 40 and irradiating on the same radius, thereby reducing the local temperature difference and realizing a gradual change in light intensity.
  • Each view in FIG9 illustrates a schematic diagram of two symmetrically positioned heating lamps 40 emitting light to the target plane 102 through the light holes 312 corresponding to each of them.
  • each reflective assembly 30 the distances between two adjacent light holes 312 and the base 130 are different, so that two adjacent heating lamps 40 can illuminate different radius ranges, realize gradual change of light intensity, and improve heating uniformity.
  • the semiconductor processing device includes a semiconductor chamber 100, and a heating device arranged outside the semiconductor chamber 100, for example, an upper heating device 200 can be arranged above the semiconductor chamber 100, and/or a lower heating device 300 can be arranged below the semiconductor chamber 100, the upper heating device 200 and the lower heating device 300 can both adopt the heating devices described in the above embodiments, and the heating device is used to heat the base 130 in the semiconductor chamber 100 during the process.
  • the top plate 110 and the bottom plate 120 of the semiconductor chamber 100 can be made of transparent materials, such as quartz materials.
  • a base 130 for carrying a substrate is arranged in the semiconductor chamber 100. During the process, the lower heating device 300 heats the base 130 through the bottom plate 120, and the upper heating device 200 heats the substrate through the top plate 110.
  • the semiconductor processing device can be a CVD silicon epitaxial device.

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Abstract

本申请公开了一种加热装置及半导体处理设备，加热装置位于基座在高度方向上的一侧，具有中心区域和多个环形区域；加热装置包括在每一环形区域，沿环形区域周向均匀设置的多个加热灯和位于多个加热灯远离基座一侧的环形反射板；以及，位于每一环形区域的靠近中心区域一侧的反射组件；反射组件包括与对应的环形区域内的多个加热灯一一对应的多个反射板；反射板由环形反射板向基座的方向延伸，以限定对应的加热灯的光照射在基座的预设区域内；反射组件用于使多个加热灯对应的预设区域位于基座的不同径向范围内。本申请可以避免光线集中照射在同一区域而使光照沿半径方向呈断崖式分布，从而实现光照强度的渐变，可以提高加热的均匀性。

Description

一种加热装置及半导体处理设备 技术领域
本申请涉及半导体制造设备技术领域，具体涉及一种加热装置及半导体处理设备。
背景技术
化学气相沉积(Chemical Vapor Deposition，CVD)硅外延是利用CVD技术在硅基衬底(比如晶圆/Wafer)表面生长硅薄膜。具体是控制反应气体流过被加热的Wafer，反应物在Wafer表面发生化学反应生成硅单质，进而在Wafer表面形成一层硅单质薄膜。
现有的一种CVD外延设备的结构示意图如图1所示，工艺腔室10a的顶板和底板为透明材料制作，工艺腔室10a的上下两侧分别布置基于红外光加热的上加热装置20a和下加热装置30a。衬底101a放置于工艺腔室10a内的基座11a上，上加热装置20a对衬底101a的表面进行直接加热，下加热装置30a对基座11a进行加热以间接对衬底101a进行加热。
衬底101a表面的温度分布对硅外延的厚度、电阻率、滑移线分布具有显著的影响，温度高的区域外延层生长速率高，其厚度则相对较厚。在对衬底101a加热的过程中，由于下加热装置30a直接加热基座11a，经由基座11a导热间接加热衬底101a，热量在传导过程中已经分布的较为均匀。而上加热装置20a的光线直射衬底101a，上加热装置20a的光照分布将对衬底101a表面的温度分布起到主导作用。
现有的上加热装置20a出现局部温差较大、衬底101a表面的温度场不均匀的问题。
发明内容
针对上述技术问题，本申请提供一种加热装置及半导体处理设备，可以改善现有的上加热装置产生的温度场不均匀的问题。
为解决上述技术问题，第一方面，本申请实施例提供一种加热装置，用于对半导体腔室内的基座进行加热，所述加热装置位于所述基座在高度方向上的一侧，所述加热装置具有中心区域和由所述中心区域向外依次环绕所述中心区域的多个环形区域；
所述加热装置包括在每一所述环形区域，沿所述环形区域周向均匀设置的多个加热灯和位于所述多个加热灯远离所述基座一侧的环形反射板；以及，位于每一所述环形区域的靠近所述中心区域一侧的反射组件；所述反射组件包括与对应的所述环形区域内的多个加热灯一一对应的多个反射板；
所述反射板由所述环形反射板向所述基座的方向延伸，以限定对应的所述加热灯的光照射在所述基座的预设区域内；
所述反射组件用于使所述多个加热灯对应的所述预设区域位于所述基座的不同径向范围内；其中，所述环形区域的中心轴线与基座的中心轴线同轴。
在一些实施例中，所述反射组件中各所述反射板均与所述基座的中心轴线平行；或者，
各所述反射板与所述基座的中心轴线的夹角均相同。
在一些实施例中，属于同一所述环形区域内的所述多个加热灯的高度相同；
所述反射板靠近所述基座的一端与所述基座之间的距离为所述反射板的第一高度，属于同一所述反射组件的所述多个反射板的所述第一高度不完全相同。
在一些实施例中，同一所述反射组件中，任意相邻的两个所述反射板的 所述第一高度不同。
在一些实施例中，所述的加热装置，还包括驱动器，用于对每个所述反射板进行升降调节。
在一些实施例中，属于同一所述环形区域内的所述多个加热灯的高度相同；
所述反射板靠近所述基座的一端与所述基座之间的距离为所述反射板的第一高度，属于同一所述反射组件的所述多个反射板的所述第一高度相同；
每一所述反射组件中，至少部分所述反射板上设置有通光孔，并且所述通光孔与所述基座的距离小于对应的所述加热灯与所述基座的距离。
在一些实施例中，每一所述反射组件中，相邻的两个所述通光孔距离所述基座的距离不相同。
在一些实施例中，相邻的两个所述环形区域中，沿同一半径方向，外侧的所述环形区域内的所述加热灯距离所述基座的距离小于内侧的所述环形区域的所述加热灯距离所述基座的距离。
在一些实施例中，相邻的两个所述环形区域中，沿同一半径方向，外侧的所述环形区域内的所述反射板的第一高度小于内侧的所述环形区域的所述反射板的第一高度。
在一些实施例中，每一所述环形区域中，所述反射组件关于所述环形区域的圆心对称。
在一些实施例中，所述的加热装置，还包括设置于所述中心区域的圆形反射板，位于最内侧的所述环形区域的所述反射组件环绕所述圆形反射板设置；
且所述圆形反射板与所述基座的距离大于位于最内侧的所述环形区域的所述反射组件中任意所述反射板的所述第一高度。
第二方面，本申请实施例提供一种半导体处理设备，包括半导体腔室， 还包括位于所述半导体腔室上方和/或位于所述半导体腔室下方的如上各实施例所述的加热装置，所述加热装置用于在工艺时对所述半导体腔室内的基座进行加热。
如上所述本申请的加热装置，环形反射板设置在加热灯远离基座一侧，反射组件设置在环形区域靠近中心区域的一侧，加热灯在环形反射板和反射组件的包围和反射下，向基座的方向照射，对基座进行加热，整个加热装置向下发射的光倾向于形成若干光圈，可以实现不同半径位置光照强度的独立控制。由于反射组件包括与对应的环形区域内的多个加热灯一一对应的多个反射板，反射板由环形反射板向基座的方向延伸，通过每个反射板可以限定对应的加热灯的光照射在基座的预设区域内，从而可以使得同一圈加热灯照射到不同半径的位置，避免光线集中照射在同一区域而使光照沿半径方向呈断崖式分布，从而可以实现光照强度的渐变，进而可以提高加热的均匀性。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本申请的实施例，并与说明书一起用于解释本申请的原理。为了更清楚地说明本申请实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，对于本领域普通技术人员而言，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1是现有的一种CVD外延设备的结构示意图；
图2是本申请对照例提供的一种上加热装置的结构示意图(仰视图)；
图3是本申请实施例提供的一种加热装置的结构示意图(仰视图)；
图4是图3中外圈加热灯对应的反射组件的展开剖面图；
图5是图3的侧视结构示意图；
图6是本申请实施例提供的一种半导体处理设备的结构示意图；
图7是本申请实施例提供的一种反射板上设置不同深度的缺口的结构示意图；
图8是本申请实施例提供的一种反射组件的俯视结构示意图；
图9是本申请实施例提供的一种反射板上设置不同高度的通光孔的结构示意图；
图10是图5中外圈加热灯对应的反射组件的展开剖面图。
本申请目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。通过上述附图，已示出本申请明确的实施例，后文中将有更详细的描述。这些附图和文字描述并不是为了通过任何方式限制本申请构思的范围，而是通过参考特定实施例为本领域技术人员说明本申请的概念。
具体实施方式
这里将详细地对示例性实施例进行说明，其示例表示在附图中。下面的描述涉及附图时，除非另有表示，不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施方式并不代表与本申请相一致的所有实施方式。相反，它们仅是与如所附权利要求书中所详述的、本申请的一些方面相一致的装置和方法的例子。
需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者装置不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者装置所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括该要素的过程、方法、物品或者装置中还存在另外的相同要素，此外，本申请不同实施例中具有同样命名的部件、特征、要素可能具有相同含义，也可能具有不同含义，其具体含义需以其在该具体实施例中的解释或者进一步结合该具体实施例中 上下文进行确定。
应当进一步理解，术语“包含”、“包括”表明存在所述的特征、步骤、操作、元件、组件、项目、种类、和/或组，但不排除一个或多个其他特征、步骤、操作、元件、组件、项目、种类、和/或组的存在、出现或添加。本申请使用的术语“或”、“和/或”、“包括以下至少一个”等可被解释为包括性的，或意味着任一个或任何组合。例如，“包括以下至少一个：A、B、C”意味着“以下任一个：A；B；C；A和B；A和C；B和C；A和B和C”，再如，“A、B或C”或者“A、B和/或C”意味着“以下任一个：A；B；C；A和B；A和C；B和C；A和B和C”。仅当元件、功能、步骤或操作的组合在某些方式下内在地互相排斥时，才会出现该定义的例外。
应当理解，尽管在本文可能采用术语第一、第二、第三等来描述各种信息，但这些信息不应限于这些术语。这些术语仅用来将同一类型的信息彼此区分开。例如，在不脱离本文范围的情况下，第一信息也可以被称为第二信息，类似地，第二信息也可以被称为第一信息。取决于语境，在本文中所使用的，单数形式“一”、“一个”和“该”旨在也包括复数形式，除非上下文中有相反的指示。
应当理解的是，术语“顶”、“底”、“上”、“下”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
为了便于描述，以下各实施例中，均是以水平面和竖直方向形成的正交空间为例进行说明，该前提条件不应理解为对本申请的限制。
请参阅图2，图2是本申请对照例提供的一种上加热装置的结构示意图(仰视图)，请同时结合图1，该上加热装置20a包括多个加热灯21a，和设置于多个加热灯21a上方和周围的反射板22a，位于多个加热灯21a上方的 反射板22a平行于工艺腔室10a的基座11a，反射板22a可以将加热灯21a朝向反射板22a发射的光向衬底101a表面反射，以提高加热效率和光的有效利用率。由于反射板22a会使得某些半径处的光线由于反射而增强，另一些半径处的光线由于遮挡而减弱，以上现象会导致在特定半径位置，光照在该位置两侧存在明显差异，从而出现局部温差较大、衬底101a表面的温度场不均匀的问题。
而且，所有加热灯21a可以排列成一圈，每隔3个加热灯21a，反射板22a的反射面设置一斜面结构，以使该斜面结构对应的一个加热灯21a(该加热灯采用剖面线与其他加热灯进行区别)的反射光能够向衬底101a的中心区域照射，以对光的分布进行调节。
该上加热装置20a中，可调节的光线只有斜面结构对应的加热灯21a的反射光。该方案只能对温度场进行小幅度调节，可覆盖的工艺范围较小。基于此，本申请提供了一种温度场分布可调节的加热装置及半导体处理设备。
请参阅图3至图5，图3是本申请实施例提供的一种加热装置的结构示意图(仰视图)，图4是图3中外圈加热灯对应的反射组件的展开剖面图，图5是图3的侧视结构示意图。该加热装置用于对半导体腔室内的基座进行加热，加热装置在安装于半导体腔室的情况下，设置于基座在高度方向上的一侧，比如，请同时结合图6，该加热装置可以设置在半导体腔室100外，也可以设置在半导体腔室100内。可以设置在基座130的正上方，也可以设置在基座130的正下方，或者加热装置为两个，且分别设置在基座130的上方和下方。
加热装置具有中心区域301和由中心区域向外依次环绕中心区域301的多个环形区域302；其中；加热装置包括在每一环形区域302，沿环形区域302周向均匀设置的多个加热灯40和位于多个加热灯40远离基座130一侧的环形反射板10。具体地，如果加热装置设置在基座130的正上方，则环形 反射板10设置在多个加热灯40的上方；如果加热装置设置在基座130的正下方，则环形反射板10设置在多个加热灯40的下方。
加热装置还包括位于每一环形区域302的靠近中心区域301一侧的反射组件30；反射组件30包括与对应的环形区域302内的多个加热灯40一一对应的多个反射板31；反射板31由环形反射板10向基座130的方向延伸，以限定对应的加热灯40的光照射在基座130的预设区域内；反射组件30用于使多个加热灯40对应的预设区域位于基座的不同径向范围内；其中，环形区域302的中心轴线与基座的中心轴线同轴。
以设置有两个环形区域302(302A和302B)为例，分别为外圈环形区域302A和内圈环形区域302B，两个环形区域302内分别设置有多个加热灯40，例如，外圈环形区域302A可以均匀设置32个加热灯40A，内圈环形区域302B可以均匀设置8个加热灯40B。具体应用时，加热灯40在每个环形区域302设置的数量根据加热的需要进行设置。作为一个示例，加热灯40可以是红外加热灯。
相应的，环形反射板10也可以设置有两个，分别为对应外圈环形区域302A的环形反射板10A，和对应内圈环形区域302B的环形反射板10B，加热灯40A远离基座130一侧的环形反射板10A，可以将加热灯40A的光反射至基座130相应的区域，加热灯40B远离基座130一侧的环形反射板10B，可以将加热灯40B的光反射至基座130上相应的区域。
相应的，反射组件30也设置有两个，分别为对应外圈环形区域302A的反射组件30A，和对应内圈环形区域302B的反射组件30B，反射组件30B设置在内圈环形区域302B靠近中心区域301的一侧；反射组件30A设置在外圈环形区域302A靠近中心区域301的一侧。
反射组件30包括与对应的环形区域302内的多个加热灯40一一对应的多个反射板31。比如当外圈环形区域302A设置有32个加热灯40A时，反 射组件30A则包括32个反射板31，当内圈环形区域302B设置8个加热灯40B时，反射组件30B则包括8个反射板31。反射板31由环形反射板10向基座130的方向延伸，以限定对应的加热灯40的光照射在基座130的预设区域内。即反射板31可以从内侧限制加热灯40向基座130中心区域的照射范围，最终使多个加热灯40的光照射在基座130的不同径向范围内。
本实施例的加热装置的工作原理为：环形反射板10设置在加热灯40远离基座130一侧，反射组件30设置在环形区域302靠近中心区域301一侧，加热灯40在环形反射板10和反射组件30的包围和反射下，向基座130的方向照射，对基座130进行加热，整个加热装置向下发射的光倾向于形成若干光圈，可以实现不同半径位置光照强度的独立控制。由于反射组件30包括与对应的环形区域302内的多个加热灯40一一对应的多个反射板31，反射板31由环形反射板10向基座130的方向延伸，通过每个反射板31可以限定对应的加热灯40的光照射在基座130的预设区域内，从而可以使得同一圈加热灯40照射到不同半径的位置，避免光线集中照射在同一区域而使光照沿半径方向呈断崖式分布，从而可以实现光照强度的渐变，进而可以提高加热的均匀性。
可以理解的是，对于最外圈的环形区域302，可以环绕其外径再设置一反射组件30，以将加热灯40的光限制在加热装置内。
本实施例中，反射组件30在竖直方向的角度不限。作为一些示例，反射组件30中各反射板31可以与基座130的中心轴线平行，也可以与基座130的中心轴线的夹角均相同，比如各反射板31由上至下均向基座130的中心轴线倾斜一预设角度(比如10°)，或均向远离基座130的中心轴线倾斜一预设角度。结合反射板31在竖直方向的长度设置、加热灯40的安装高度设置等，均可以实现同一圈加热灯40照射到基座130不同半径的位置。下面以具体实施例对本申请作进一步详细说明。
在一个实施例中，请继续参阅图4和图5，属于同一环形区域302内的多个加热灯40的高度相同。在加热装置安装于半导体腔室的情况下，反射板31靠近基座130的一端与基座130之间的距离为反射板31的第一高度H，属于同一反射组件30的多个反射板31的第一高度H不完全相同。比如，图4中反射板31B和反射板31A的第一高度相差H0，从而在反射组件30上形成缺口311，反射板31A对应的加热灯40可以通过缺口311照射到基座130不同半径的位置，实现该半径上光照强度的渐变。可以通过设置每个反射板31的第一高度H，形成多个缺口311，使反射组件30形成如图4所示的锯齿结构，比如，同一环形区域302内，每隔一个加热灯40A设置一个缺口311，缺口311与对应的加热灯40A在环形区域302的投影位于同一半径上。随着缺口311的深度尺寸H0的不同，照射半径也不相同。反射板31上缺口311的设置，可以拓展加热灯40A的照射半径范围，实现光照强度的渐变，以提高加热的均匀性。
需要说明的是，反射组件30可以是一体化结构，也可以是多个反射板31依次拼接而成，如图8所示。通过设置相邻的两个反射板31沿竖直方向的长度不相等，从而可以形成缺口311。本申请实施例对反射组件30的具体成型方式不作特别限定。
需要强调的是，通过反射板31的形状及高度的设置，缺口311的深度H0可以不同，在反射组件30上出现的位置也可以是随机的，不具有周期性。并且缺口311的形状也不局限于图示的矩形形状，例如还可以是三角形、圆弧形或者不同图形的组合等等。
示例性的，同一反射组件30中，任意相邻的两个反射板31的第一高度H不同，可以形成规律的锯齿结构，提高加热的均匀性。此外，每一环形区域302中，反射组件30最好关于环形区域302的圆心对称，可以使位于对称位置的加热灯40能够加热基座130相同的半径范围，从而可以对光照范围进 行对称调节，以提高温度场的均匀性。
作为一个示例，相邻的两个环形区域302中，沿同一半径方向，外侧环形区域302的反射板31的第一高度小于内侧环形区域302的反射板31的第一高度。可以防止加热灯40向外侧发散，降低了加热效率。
在一个实施例中，请继续参阅图5，相邻的两个环形区域302中，沿同一半径方向，外侧环形区域302的加热灯40距离基座130的距离L小于内侧环形区域302的加热灯40距离基座130的距离。由于接近基座130中心的位置会被更多的加热灯40照射，通过设置内侧加热灯40距离基座130更远，来平衡上述受热不均，从而可以提高基座130的受热均匀性。
在一个实施例中，请继续参阅图3和图5，加热装置还可以包括设置于中心区域301的圆形反射板20，位于最内侧的环形区域302的反射组件30环绕圆形反射板20设置，且圆形反射板20与基座130的距离S大于位于最内侧的环形区域302的反射组件30中任意反射板31的第一高度H。通过设置圆形反射板20处于高于位于最内侧的环形区域302的反射组件30中任意反射板31的位置，可以减少圆形反射板20对内侧环形区域302的加热灯的阻挡。
为了便于描述，请参阅图6和图7，图6是本申请实施例提供的一种半导体处理设备的结构示意图，图7是本申请实施例提供的一种反射板上设置不同深度的缺口的结构示意图，本申请提供的加热装置应用于该半导体处理设备中。以加热装置位于基座130上方为例，将位于环形反射板10的圆环形区域下方预设距离L0的面设为目标平面102，应用时，目标平面102可以是待加热件(例如衬底)的顶面，即待加热件装载到基座130上后，待加热件的顶面距离环形反射板10的底面的距离为L0。目标平面102上与环形区域302的圆心正对的点设为中心点O，缺口311对应的加热灯40通过该缺口311射出的光线与目标平面102的交点设为目标点A。作为一些示例，比如，至 少一个缺口311的深度满足：与该缺口311对应的加热灯40在目标平面102的投影B和目标点A位于中心点O的同一侧，如图7中视图a所示。如上文所述，缺口311最好是相对于中心点O成对对称设置，图中示意了两个对称位置的加热灯40通过与各自对应的缺口311向目标平面102发射光线的示意图，通过该缺口311，可以使对应的加热灯40的照射半径向中心点O扩大，避免所有光线照射在同一半径上，实现光照强度的渐变。
再比如，还可以使至少一个缺口311的深度满足：与该缺口311对应的加热灯40在目标平面102的投影B和目标点A位于中心点O的两侧，如图7中视图c所示。同样，图中示意了两个对称位置的加热灯40通过与各自对应的缺口311向目标平面102发射光线的示意图，由于缺口311较深，加热灯40通过对应的缺口311可以照射至中心点O的另一侧，可以使该加热灯40具有更大的照射半径，实现光照强度的渐变。
又比如，还可以使至少一个缺口311的深度满足：与该缺口311对应的目标点A与中心点O重合，如图7中视图b所示。同样，图中示意了两个对称位置的加热灯40通过与各自对应的缺口311向目标平面102发射光线的示意图，加热灯40通过对应的缺口311刚好照射至中心点O，即目标点A与中心点O重合。
实际应用时，缺口311的深度可以在图7中视图a、视图b、视图c对应的三种设置方式进行选择，可以选择其中一种，也可以选择两种或者三种结合使用。可以通过控制不同缺口311对应的加热灯40的开关和功率来对温度场进行调控。
在一个实施例中，请参阅图6，属于同一环形区域302内的多个加热灯40的高度相同，属于同一反射组件30的多个反射板31的第一高度H不完全相同，该加热装置还可以包括驱动器50，驱动器50用于对每个反射板31进行升降调节。比如，驱动器50可以是电机。驱动器50可以与反射板31一一 对应设置，也可以处于对称位置的两个加热灯40由同一个驱动器50进行升降控制。在温度场需要进行大幅度调整时，可以通过驱动器50对每个反射板31进行升降调节，以实现更大的工艺覆盖范围。
进一步的，请参阅图6，加热装置还可以包括控制器60，控制器60可以对每个加热灯40的开关以及加热功率进行单独控制，从而可以在更大的范围对温度场进行调节。
在一个实施例中，还可以在反射板31上设置通光孔312来改变加热灯的径向照射范围。请参阅图9和图10，图9是本申请实施例提供的一种反射板上设置不同高度的通光孔的结构示意图，图10是图5中外圈环形区域对应的反射组件的展开剖面图。该方案中，属于同一环形区域302内的多个加热灯40的高度相同，并且属于同一反射组件30的多个反射板31的第一高度H相同，可以简化反射组件30的制造工艺；每一反射组件30中，至少部分反射板31上设置有通光孔312，并且通光孔312与基座130的距离小于对应的加热灯40与基座130的距离，可以保证加热灯40的光能够穿过对应的通光孔312向下方照射，以对基座130进行加热。
图9中从视图a到视图c，相对于视图a，设置了通光孔312A和通光孔312B后，加热灯40可以照射目标平面102不同半径的区域，并且随着通光孔312的高度的升高，加热灯40的照射半径也相应地发生变化，通光孔312的设置可以拓展加热灯40在目标平面102的照射范围，避免加热灯40局部集中分布，照射在同一半径上，从而可以降低局部温差，实现光照强度的渐变。图9中每个视图示意了两个对称位置的加热灯40通过与各自对应的通光孔312向目标平面102发射光线的示意图。
示例性的，每一反射组件30中，相邻的两个通光孔312距离基座130的距离不相同。从而可以使相邻两个加热灯40可以照射不同的半径范围，实现光照强度的渐变，以提高加热的均匀性。
本申请实施例还提供了一种半导体处理设备，请参阅图6，该半导体处理设备包括半导体腔室100，以及设置于半导体腔室100外侧的加热装置，比如可以在半导体腔室100的上方设置上加热装置200，和/或在半导体腔室100的下方设置下加热装置300，上加热装置200和下加热装置300均可以采用如上各实施例所述的加热装置，加热装置用于在工艺时对半导体腔室内100的基座130进行加热。作为一个示例，半导体腔室100的顶板110和底板120可以采用透明材料制作，比如石英材料。半导体腔室100内设置有用于承载衬底的基座130，工艺时，下加热装置300透过底板120对基座130进行加热，上加热装置200透过顶板110对衬底进行加热。该半导体处理设备可以是CVD硅外延设备。
有关本实施例半导体处理设备的其他工作原理和过程，参见前述本发明实施例关于加热装置的说明，此处不再赘述。
以上对本申请所提供的一种加热装置及半导体处理设备进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述。需要说明的是，在本申请中，对各个实施例的描述都各有侧重，某个实施例中没有详述或记载的部分，可以参见其它实施例的相关描述。
以上仅为本申请的优选实施例，并非因此限制本申请的专利范围，本申请技术方案的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，只要这些技术特征的组合不存在矛盾，均同理包括在本申请的专利保护范围内。

Claims (12)

  1. 一种加热装置，用于对半导体腔室内的基座进行加热，其特征在于，所述加热装置位于所述基座在高度方向上的一侧，所述加热装置具有中心区域和由所述中心区域向外依次环绕所述中心区域的多个环形区域；
    所述加热装置包括在每一所述环形区域，沿所述环形区域周向均匀设置的多个加热灯和位于所述多个加热灯远离所述基座一侧的环形反射板；以及，位于每一所述环形区域的靠近所述中心区域一侧的反射组件；所述反射组件包括与对应的所述环形区域内的多个加热灯一一对应的多个反射板；
    所述反射板由所述环形反射板向所述基座的方向延伸，以限定对应的所述加热灯的光照射在所述基座的预设区域内；
    所述反射组件用于使所述多个加热灯对应的所述预设区域位于所述基座的不同径向范围内；其中，所述环形区域的中心轴线与基座的中心轴线同轴。
  2. 根据权利要求1所述的加热装置，其特征在于，所述反射组件中各所述反射板均与所述基座的中心轴线平行；或者，
    各所述反射板与所述基座的中心轴线的夹角均相同。
  3. 根据权利要求2所述的加热装置，其特征在于，属于同一所述环形区域内的所述多个加热灯的高度相同；
    所述反射板靠近所述基座的一端与所述基座之间的距离为所述反射板的第一高度，属于同一所述反射组件的所述多个反射板的所述第一高度不完全相同。
  4. 根据权利要求3所述的加热装置，其特征在于，同一所述反射组件中，任意相邻的两个所述反射板的所述第一高度不同。
  5. 根据权利要求3所述的加热装置，其特征在于，还包括驱动器，用于对每个所述反射板进行升降调节。
  6. 根据权利要求2所述的加热装置，其特征在于，属于同一所述环形区域内的所述多个加热灯的高度相同；
    所述反射板靠近所述基座的一端与所述基座之间的距离为所述反射板的第一高度，属于同一所述反射组件的所述多个反射板的所述第一高度相同；
    每一所述反射组件中，至少部分所述反射板上设置有通光孔，并且所述通光孔与所述基座的距离小于对应的所述加热灯与所述基座的距离。
  7. 根据权利要求6所述的加热装置，其特征在于，每一所述反射组件中，相邻的两个所述通光孔距离所述基座的距离不相同。
  8. 根据权利要求1-7任一项所述的加热装置，其特征在于，相邻的两个所述环形区域中，沿同一半径方向，外侧的所述环形区域内的所述加热灯距离所述基座的距离小于内侧的所述环形区域内的所述加热灯距离所述基座的距离。
  9. 根据权利要求1-7任一项所述的加热装置，其特征在于，相邻的两个所述环形区域中，沿同一半径方向，外侧的所述环形区域内的所述反射板的第一高度小于内侧的所述环形区域的所述反射板的第一高度。
  10. 根据权利要求1-7任一项所述的加热装置，其特征在于，每一所述环形区域中，所述反射组件关于所述环形区域的圆心对称。
  11. 根据权利要求1-7任一项所述的加热装置，其特征在于，还包括设置于所述中心区域的圆形反射板，位于最内侧的所述环形区域的所述反射组件环绕所述圆形反射板设置；
    且所述圆形反射板与所述基座的距离大于位于最内侧的所述环形区域的所述反射组件中任意所述反射板的所述第一高度。
  12. 一种半导体处理设备，包括半导体腔室，其特征在于，还包括位于所述半导体腔室上方和/或位于所述半导体腔室下方的如权利要求1-11任一项所述的加热装置，所述加热装置用于在工艺时对所述半导体腔室内的基座进行加热。
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