WO2024255409A1 - 含磷钝化剂、钙钛矿太阳能电池、光伏组件、光伏系统及用电装置 - Google Patents

含磷钝化剂、钙钛矿太阳能电池、光伏组件、光伏系统及用电装置 Download PDF

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WO2024255409A1
WO2024255409A1 PCT/CN2024/086861 CN2024086861W WO2024255409A1 WO 2024255409 A1 WO2024255409 A1 WO 2024255409A1 CN 2024086861 W CN2024086861 W CN 2024086861W WO 2024255409 A1 WO2024255409 A1 WO 2024255409A1
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group
phosphorus
layer
perovskite
carbon atoms
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English (en)
French (fr)
Inventor
贾博宇
梁伟风
顾帅
史若璇
陈国栋
郭永胜
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Contemporary Amperex Technology Co Ltd
Contemporary Amperex Future Energy Research Institute (Shanghai) Ltd
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Contemporary Amperex Technology Co Ltd
Contemporary Amperex Future Energy Research Institute (Shanghai) Ltd
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Priority to JP2025556759A priority Critical patent/JP7890535B2/ja
Priority to KR1020257032130A priority patent/KR20250167606A/ko
Priority to EP24822364.6A priority patent/EP4722223A1/en
Publication of WO2024255409A1 publication Critical patent/WO2024255409A1/zh
Priority to US19/346,653 priority patent/US20260033235A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5407—Acyclic saturated phosphonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5407—Acyclic saturated phosphonium compounds
    • C07F9/5414—Acyclic saturated phosphonium compounds substituted by B, Si, P or a metal
    • C07F9/5421—Acyclic saturated phosphonium compounds substituted by B, Si, P or a metal substituted by a phosphorus atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5435—Cycloaliphatic phosphonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5442—Aromatic phosphonium compounds (P-C aromatic linkage)
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5449—Polyphosphonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5456—Arylalkanephosphonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/547—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom
    • C07F9/6558—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom containing at least two different or differently substituted hetero rings neither condensed among themselves nor condensed with a common carbocyclic ring or ring system
    • C07F9/65583—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom containing at least two different or differently substituted hetero rings neither condensed among themselves nor condensed with a common carbocyclic ring or ring system each of the hetero rings containing nitrogen as ring hetero atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H02S20/30—Supporting structures being movable or adjustable, e.g. for angle adjustment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present application relates to the technical field of solar cells, and in particular to a phosphorus-containing passivator, a perovskite solar cell, a photovoltaic module, a photovoltaic system and an electrical device.
  • Perovskite solar cells belong to the third generation of solar cells. They have many characteristics such as excellent photoelectric properties, high light absorption coefficient, long carrier lifetime and long diffusion length. They have become the leader among the third generation of new solar cells.
  • perovskite solar cells when perovskite solar cells are prepared into thin films, a large number of defects will exist in the bulk and surface, including low-coordinated Pb 2+ in deep energy level traps, Pb clusters, low-coordinated halide ions, antisite defects PbI 3 - produced by ion migration, shallow energy level defects halogen X - vacancies and A-site cation vacancies.
  • the presence of a large number of defects affects the photoelectric performance and stability of perovskite solar cells.
  • the present application is made in view of the above-mentioned problems, and its purpose includes providing a phosphorus-containing passivator, a perovskite solar cell, a photovoltaic module, a photovoltaic system and an electrical device to improve the photoelectric performance and stability of the perovskite solar cell.
  • the first aspect of the present application provides a phosphorus-containing passivating agent, wherein the phosphorus-containing passivating agent comprises an ionic compound, wherein the ionic compound comprises a cationic group; and the cationic group has a structure shown in the following formula (I):
  • A represents an organic phosphorus group with a lone pair of electrons
  • B represents an organic phosphorus salt group with a positive charge
  • L represents a connecting group between the organic phosphorus group and the organic phosphorus salt group.
  • the phosphorus-containing passivator of the present application contains an organic phosphorus group with a lone pair of electrons and an organic phosphorus salt group with a positive charge.
  • the lone pair of electrons of the organic phosphorus group can form a strong P-Pb coordination bond with the unsaturated coordinated lead ions in the bulk phase and/or at the upper and lower interfaces of the perovskite light-absorbing layer, and passivate the low-coordinated lead ion defects;
  • the organic phosphorus salt group can form a low-dimensional perovskite at the upper and lower interfaces of the perovskite layer, passivate the interface of the perovskite layer, and inhibit ion migration; therefore, the photoelectric performance and stability of the perovskite solar cell can be improved through the synergistic effect of the organic phosphorus group and the organic phosphorus salt group.
  • the ionic compound further comprises an anion group, wherein the anion group comprises one or more of a halogen anion, a quasi-halogen anion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a dimethylsulfonamide ion.
  • the halogen anion and the halogen-containing anion group can respectively passivate the iodide ion vacancy and reduce energy loss.
  • the L includes one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, and a substituted or unsubstituted arylarylene group.
  • the phosphorus-containing passivating agent has a structure shown in the following formula (II):
  • R 1 , R 2 , R 3 , R 4 , and R 5 include any one of substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, and substituted or unsubstituted aryl;
  • L includes any one of substituted or unsubstituted alkylene, substituted or unsubstituted cycloalkylene, and substituted or unsubstituted arylarylene;
  • X includes any one of a halogen anion and a halogen-containing anion group
  • n1 ⁇ 4, 1 ⁇ n2 ⁇ 10, 1 ⁇ n3 ⁇ 4, n1, n2, n3 are integers.
  • R 1 , R 2 , R 3 , R 4 , and R 5 include any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group; the substituent in the substituted phenyl group includes one or more of a halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and an alkoxysilyl group;
  • the substituents in the substituted phenyl group include one or more of halogen, alkyl having 1-10 carbon atoms, cycloalkyl having 1-10 carbon atoms, alkoxy having 1-10 carbon atoms, alkylthio having 1-10 carbon atoms, alkylsilyl having 1-10 carbon atoms and alkoxysilyl having 1-10 carbon atoms.
  • the R 1 and R 2 include any one of a cycloalkyl group having 1 to 10 carbon atoms and a phenyl group;
  • the R 1 and the R 2 are the same and include any one of a cycloalkyl group and a phenyl group having 1 to 10 carbon atoms.
  • said R 3 , said R 4 , and said R 5 include any one of alkyl groups having 1 to 10 carbon atoms;
  • the R 3 , the R 4 , and the R 5 are identically any one of alkyl groups having 1 to 10 carbon atoms.
  • the L includes any one of an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 1 to 10 carbon atoms, a phenylene group, and a substituted phenylene group; the substituents in the substituted phenylene group include one or more of a halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and an alkoxysilyl group;
  • the substituents in the substituted phenylene group include one or more of halogen, alkyl having 1-10 carbon atoms, cycloalkyl having 1-10 carbon atoms, alkoxy having 1-10 carbon atoms, alkylthio having 1-10 carbon atoms, alkylsilyl having 1-10 carbon atoms and alkoxysilyl having 1-10 carbon atoms.
  • the L comprises any one of alkylene groups having 1-10 carbon atoms.
  • the X comprises any one of an iodide ion and a boron tetrafluoride ion.
  • the phosphorus-containing passivating agent comprises any one of the following structural formulas:
  • the second aspect of the present application provides a perovskite solar cell, which comprises the phosphorus-containing passivator of the first aspect of the present application.
  • the perovskite solar cell containing the phosphorus-containing passivator is prepared by adding the phosphorus-containing passivator during the preparation process, and the phosphorus-containing passivator can coordinately passivate low-coordinated lead ion defects, interface defects and iodine ion vacancy defects, reduce the energy loss of charge in the perovskite light absorption layer and/or at the interface, and improve the photoelectric performance and stability of the perovskite solar cell.
  • the perovskite solar cell includes a perovskite light absorbing layer, and the perovskite light absorbing layer contains the phosphorus-containing passivator; the phosphorus-containing passivator is directly added when preparing the perovskite light absorbing layer to passivate the low-coordinated lead ion defects, interface defects and iodine ion vacancy defects of the perovskite light absorbing layer.
  • the mass proportion of the phosphorus-containing passivator in the perovskite light absorbing layer is 0.01%-1%; optionally 0.05%-0.5%.
  • the mass proportion of the phosphorus-containing passivator in the perovskite light absorbing layer is within the above range, the low-coordinated lead ion defects, interface defects and iodine ion vacancy defects of the perovskite light absorbing layer can be effectively passivated.
  • the perovskite solar cell comprises a stacked perovskite light absorbing layer and a passivation layer.
  • the passivation layer is located on the light incident side or the light emitting side of the perovskite light absorbing layer, and the passivation layer contains the phosphorus-containing passivator; optionally, the thickness of the passivation layer is 0.1nm-10nm; optionally, 1nm-10nm.
  • a passivation layer is formed on the upper surface or the lower surface of the perovskite light absorbing layer, which can passivate the low-coordinated lead ion defects, interface defects and iodine ion vacancy defects of the perovskite light absorbing layer; when the thickness of the passivation layer is within the above range, the low-coordinated lead ion defects, interface defects and iodine ion vacancy defects of the perovskite light absorbing layer can be effectively passivated.
  • the perovskite light absorbing layer includes an active material having a molecular formula of ABX 3 or A 2 CDX 6 ;
  • the active material with the molecular formula ABX 3 or A 2 CDX 6 has at least one of the following characteristics:
  • A includes one or more of organic cations and inorganic cations; optionally, A includes one or more of monovalent amidine cations, monovalent amine cations and Cs + ;
  • B includes one or more of organic cations and inorganic cations; optionally, B includes one or more of Pb 2+ and Sn 2+ ;
  • C includes one or more of organic cations and inorganic cations; optionally, the C includes Ag + ;
  • D includes one or more of organic cations and inorganic cations; optionally, D includes one or more of Bi 3+ , Sb 3+ , and In 3+ ;
  • X includes one or more of an organic anion and an inorganic anion; optionally, X includes one or more of Br- and I- .
  • the perovskite light absorbing layer has at least one of the following characteristics:
  • the thickness of the perovskite light absorbing layer is 100nm-1000nm;
  • the band gap width of the perovskite light absorbing layer is within the range of 1.2 eV to 2.3 eV.
  • the thickness of the perovskite light absorption layer is within the above range, it can effectively absorb sunlight and achieve optimal photoelectric conversion efficiency and stability.
  • the band gap width of the perovskite light absorption layer is within the above range, it can have a higher visible light absorption efficiency.
  • the perovskite solar cell further comprises an electron transport layer, a barrier layer and an electrode layer located on the light-emitting side of the perovskite light-absorbing layer, wherein the electron transport layer, the barrier layer and the electrode layer are stacked in sequence, wherein the electron transport layer is closer to the perovskite light-absorbing layer;
  • the material of the barrier layer includes one or more of 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, SnO 2 , ZnO and cerium-containing oxide;
  • the barrier layer has a thickness of 0.5 nm-20 nm.
  • the blocking layer can effectively block the transmission of holes and reduce the energy loss caused by charge recombination; the use of the above-mentioned materials to prepare the blocking layer can make the blocking layer have a lower valence band top, further improving the blocking layer's transmission effect on holes; when the thickness of the blocking layer is within the above-mentioned range, it can effectively block holes without being too thick to affect electron transmission.
  • the third aspect of the present application provides a photovoltaic module, including the perovskite solar cell of the second aspect of the present application.
  • the perovskite solar cell has high photoelectric conversion efficiency and good stability, which can improve the photoelectric efficiency and stability of the photovoltaic module.
  • the fourth aspect of the present application provides a photovoltaic system, including the photovoltaic module of the third aspect of the present application.
  • the photovoltaic system uses the perovskite solar cells in the photovoltaic module to directly convert solar radiation energy into electrical energy with high efficiency and good stability.
  • the fifth aspect of the present application provides an electrical device, comprising the perovskite solar cell of the second aspect of the present application.
  • FIG1 is a schematic diagram of the structure of a perovskite solar cell provided in one embodiment of the present application.
  • FIG. 2 is a schematic diagram of the structure of a perovskite solar cell provided in one embodiment of the present application.
  • FIG3 is a schematic diagram of the structure of a perovskite solar cell provided in one embodiment of the present application.
  • FIG. 4 is a schematic diagram of an electrical device using a perovskite solar cell as a power source according to an embodiment of the present application.
  • the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.
  • any lower limit can be combined with any upper limit to form an unspecified range; and any lower limit can be combined with other lower limits to form an unspecified range, and any upper limit can be combined with any other upper limit to form an unspecified range.
  • each separately disclosed point or single value can itself be combined as a lower limit or upper limit with any other point or single value or with other lower limits or upper limits to form an unspecified range.
  • “Scope” disclosed in the present application is limited in the form of lower limit and upper limit, and a given range is limited by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundary of a special range.
  • the scope limited in this way can be including end values or not including end values, and can be arbitrarily combined, that is, any lower limit can form a scope with any upper limit combination. For example, if the scope of 60-120 and 80-110 is listed for a specific parameter, it is understood that the scope of 60-110 and 80-120 is also expected.
  • the numerical range "a-b" represents the abbreviation of any real number combination between a and b, wherein a and b are real numbers.
  • the numerical range "0-5" means that all real numbers between "0-5" are listed in this document, and "0-5" is just an abbreviation of these numerical combinations.
  • a parameter is expressed as an integer ⁇ 2, it is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.
  • the method includes steps (a) and (b), which means that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially.
  • the method may further include step (c), which means that step (c) may be added to the method in any order.
  • the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.
  • the “include” and “comprising” mentioned in this application are open-ended or closed-ended.
  • the “include” and “comprising” may mean that other components not listed may also be included or only the listed components may be included or only the listed components may be included.
  • the term "or” is inclusive. That is, the phrase “A or (or) B” means “A, B, or both A and B". More specifically, any of the following conditions satisfies the condition "A or B”: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).
  • the terms used in this application have the well-known meanings commonly understood by those skilled in the art.
  • the numerical values of the parameters mentioned in this application can be measured using various measurement methods commonly used in the art. Amount (for example, it can be tested according to the method given in the examples of this application).
  • perovskite solar cells when perovskite solar cells are prepared into thin films, a large number of defects will be generated in the bulk and surface. The existence of these defects affects the photoelectric performance and stability of perovskite solar cells. Passivation defects are a problem that needs to be urgently solved when preparing perovskite solar cells.
  • the methods to fill these defects can be mainly divided into Lewis acid, Lewis base, anion, cationic passivation, etc.
  • the Lewis base passivators reported so far are mostly molecules or ions containing nitrogen, sulfur, oxygen and other atoms, and the passivation effect is limited.
  • the first aspect of the present application provides a phosphorus-containing passivator, which includes an ionic compound, the ionic compound includes a cationic group, and the cationic group has a structure shown in the following formula (I):
  • A represents an organic phosphorus group with a lone pair of electrons
  • B represents an organic phosphorus salt group with a positive charge
  • L represents a connecting group between the organic phosphorus group and the organic phosphorus salt group.
  • the number of organic phosphorus groups contained in the cationic group can be one or more, which can be set according to actual needs; the number of organic phosphorus salt groups contained in the cationic group can be one or more, which can be set according to actual needs.
  • the organic phosphorus salt group can have one positive charge or multiple positive charges.
  • the organic phosphorus group and the organic phosphorus salt group in the cationic group are connected via the L group.
  • the phosphorus-containing passivator contains an organic phosphorus group with a lone pair of electrons and an organic phosphorus salt group with a positive charge.
  • the lone pair of electrons of the organic phosphorus group can form a strong P-Pb coordination bond with the unsaturated coordinated lead ions in the bulk phase and/or at the upper and lower interfaces of the perovskite light-absorbing layer, thereby passivating the low-coordinated lead ion defects;
  • the organic phosphorus salt group can form a low-dimensional perovskite at the upper and lower interfaces of the perovskite layer, passivate the interface of the perovskite layer, and inhibit ion migration; therefore, the photoelectric performance and stability of perovskite solar cells can be improved through the synergistic effect of the organic phosphorus group and the organic phosphorus salt group.
  • the ionic compound further comprises an anion group, wherein the anion group comprises one or more of a halogen anion, a quasi-halogen anion, a tetrafluoroborate ion, a hexafluorophosphate ion, and a dimethylsulfonamide ion.
  • the halogen anion and the halogen-containing anion group can respectively passivate the iodide ion vacancy and reduce energy loss.
  • halogen anion refers to an anion formed when a halogen element obtains an electron.
  • halogen-containing anion group refers to an anion group formed by a halogen element and other elements.
  • the organic phosphorus groups, organic phosphorus salt groups, and halogen anions and/or halogen-containing anion groups contained in the ionic compounds of the present application can coordinately passivate low-coordinated lead ion defects, interface defects, and iodine ion vacancy defects, reduce the energy loss of charges in the perovskite light-absorbing layer and/or at the interface, and improve the photoelectric performance and stability of perovskite solar cells.
  • L includes one or more of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, and a substituted or unsubstituted arylene group.
  • Alkylene refers to a hydrocarbon group having two monovalent radical centers derived from an alkyl group by removing a hydrogen atom, which may be a saturated branched alkyl group or a saturated straight-chain alkyl group.
  • C 1 -C 9 alkylene means that the alkyl portion contains 1 to 9 carbon atoms, and each occurrence may be independently C 1 alkylene, C 4 alkylene, C 5 alkylene, C 6 alkylene, C 7 alkylene, C 8 alkylene or C 9 alkylene.
  • Suitable examples include, but are not limited to, methylene (-CH 2 -), 1,1-ethylene (-CH(CH 3 )-), 1,2-ethylene (-CH 2 CH 2 -), 1,1-propylene (-CH(CH 2 CH 3 )-), 1,2-propylene (-CH 2 CH(CH 3 )-), 1,3-propylene (-CH 2 CH 2 CH 2 -) and 1,4-butylene (-CH 2 CH 2 CH 2 CH 2 -).
  • Cycloalkylene refers to a non-aromatic hydrocarbon containing ring carbon atoms derived from a cycloalkyl group by removing a hydrogen atom to form two monovalent radical centers, and may be a monocycloalkylene group, a spirocycloalkylene group, or a bridged cycloalkylene group.
  • C 3 to C 9 cycloalkylene group refers to a cycloalkylene group containing 3 to 9 carbon atoms, and each occurrence may be independently cyclopropylene, cyclobutylene, cyclopentylene, cyclohexylene, cycloheptylene, octylene, or nonylene.
  • the cycloalkylene group may also contain one or more double bonds, and representative examples of cycloalkylene groups containing double bonds include cyclopentenylene, cyclohexenylene, cyclohexadienylene, and cyclobutadienylene.
  • Arylene refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing two hydrogen atoms. It can be a monocyclic arylene group, a condensed ring arylene group, or a polycyclic arylene group. For polycyclic rings, at least one is an aromatic ring system.
  • C 6 -C 20 arylene refers to an arylene group containing 6 to 20 carbon atoms. Each occurrence can be independently C 6 arylene, C 10 arylene group, C 14 arylene group, C 18 arylene group or C 20 arylene group.
  • the phosphorus-containing passivating agent has a structure shown in the following formula (II):
  • R 1 , R 2 , R 3 , R 4 , and R 5 include any one of substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl, and substituted or unsubstituted aryl;
  • L includes any one of a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, and a substituted or unsubstituted arylene group;
  • X includes any one of a halogen anion and a halogen-containing anion group
  • n1 ⁇ 4, 1 ⁇ n2 ⁇ 10, 1 ⁇ n3 ⁇ 4, n1, n2, n3 are integers.
  • R 1 , R 2 , R 3 , R 4 and R 5 include any one of substituted or unsubstituted alkyl, substituted or unsubstituted cycloalkyl and substituted or unsubstituted aryl.
  • n1, n2 and n3 are integers.
  • Alkyl refers to a saturated hydrocarbon containing primary (normal) carbon atoms, or secondary carbon atoms, or tertiary carbon atoms, or quaternary carbon atoms, or a combination thereof. Phrases containing this term, for example, "C 1 to C 9 alkyl” refers to an alkyl containing 1 to 9 carbon atoms, and each occurrence can be independently C 1 alkyl, C 2 alkyl, C 3 alkyl, C 4 alkyl, C 5 alkyl, C 6 alkyl, C 7 alkyl, C 8 alkyl or C 9 alkyl.
  • Cycloalkyl refers to a non-aromatic hydrocarbon containing ring carbon atoms, which can be a monocyclic alkyl, a spirocyclic alkyl, or a bridged cycloalkyl. Phrases containing this term, for example, "C 3 ⁇ C 9 cycloalkyl” refers to a cycloalkyl containing 3 to 9 carbon atoms, each occurrence of which can be independently C 3 cycloalkyl, C 4 cycloalkyl, C 5 cycloalkyl, C 6 cycloalkyl , C 7 cycloalkyl, C 8 cycloalkyl or C 9 cycloalkyl.
  • Suitable examples include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl and cycloheptyl.
  • cycloalkyl may also contain one or more double bonds, and representative examples of cycloalkyl containing double bonds include cyclopentenyl, cyclohexenyl, cyclohexadienyl and cyclobutadienyl.
  • Aryl refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing a hydrogen atom, and may be a monocyclic aromatic group, a condensed aromatic group, or a polycyclic aromatic group. For polycyclic rings, at least one is an aromatic ring system.
  • C 6 ⁇ C 20 aryl refers to an aromatic group containing 6 to 20 carbon atoms, and each occurrence may be independently C 6 aryl, C 10 aryl, C 14 aryl, C 18 aryl or C 20 aryl. Suitable examples include, but are not limited to, benzene, biphenyl, naphthalene, anthracene, phenanthrene, perylene, triphenylene and their derivatives.
  • substituted or unsubstituted means that the defined group may be substituted or unsubstituted.
  • substituted it should be understood that it is optionally substituted by a group acceptable in the art, including but not limited to: alkyl, alkoxy, alkenyl, alkynyl, aryl, heteroaryl, heteroalkyl, heterocyclyl, amino, halogen.
  • R 1 , R 2 , R 3 , R 4 , and R 5 include any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group, and a substituted phenyl group; the substituents in the substituted phenyl group include one or more of a halogen, an alkyl group, a cycloalkyl group, an alkoxy group, an alkylthio group, an alkylsilyl group, and an alkoxysilyl group.
  • R 1 , R 2 , R 3 , R 4 and R 5 each include any one of an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 1 to 10 carbon atoms, a phenyl group and a substituted phenyl group.
  • the substituents in the substituted phenyl include one or more of halogen, alkyl having 1-10 carbon atoms, cycloalkyl having 1-10 carbon atoms, alkoxy having 1-10 carbon atoms, alkylthio having 1-10 carbon atoms, alkylsilyl having 1-10 carbon atoms and alkoxysilyl having 1-10 carbon atoms.
  • Alkoxy refers to a group having an -O-alkyl group, i.e., an alkyl group connected to a parent core structure via an oxygen atom.
  • C 1 to C 9 alkoxy means that the alkyl portion contains 1 to 9 carbon atoms, and each occurrence can be independently C 1 alkoxy, C 4 alkoxy, C 5 alkoxy, C 6 alkoxy, C 7 alkoxy, C 8 alkoxy or C 9 alkoxy.
  • Suitable examples include, but are not limited to, methoxy (-O-CH 3 or -OMe), ethoxy (-O-CH 2 CH 3 or -OEt) and tert-butoxy (-OC(CH 3 ) 3 or -OtBu).
  • the alkylthio group refers to an alkyl group in which at least one carbon atom is replaced by a sulfur atom, and the alkyl group is connected to the parent core structure via the sulfur atom.
  • Alkylsilyl refers to an alkyl group in which at least one carbon atom is replaced by silicon, and the alkyl group is connected to the parent core structure via the silicon atom.
  • Alkoxysilyl means that at least one carbon atom in an alkyl group is replaced by a silicon element, and the alkoxy group is connected to the parent core structure via the silicon atom.
  • R 1 and R 2 include any one of a cycloalkyl group having 1 to 10 carbon atoms and a phenyl group.
  • R 1 and R 2 each include any one of a cycloalkyl group having 1 to 10 carbon atoms and a phenyl group.
  • R 1 and R 2 are identically any one of a cycloalkyl group having 1 to 10 carbon atoms and a phenyl group.
  • R 3 , R 4 , and R 5 include any one of alkyl groups having 1 to 10 carbon atoms.
  • R 3 , R 4 and R 5 each include any one of alkyl groups having 1 to 10 carbon atoms.
  • R 3 , R 4 , and R 5 identically include any one of alkyl groups having 1 to 10 carbon atoms.
  • L includes any one of an alkylene group having 1 to 10 carbon atoms, a cycloalkylene group having 1 to 10 carbon atoms, a phenylene group and a substituted phenylene group; the substituents in the substituted phenylene group include one or more of halogen, alkyl, cycloalkyl, alkoxy, alkylthio, alkylsilyl and alkoxysilyl.
  • the substituents in the substituted phenylene include one or more of halogen, alkyl having 1-10 carbon atoms, cycloalkyl having 1-10 carbon atoms, alkoxy having 1-10 carbon atoms, alkylthio having 1-10 carbon atoms, alkylsilyl having 1-10 carbon atoms, and alkoxysilyl having 1-10 carbon atoms.
  • L includes any one of alkylene groups having 1 to 10 carbon atoms.
  • X includes any one of an iodide ion and a boron tetrafluoride ion.
  • the phosphorus-containing passivating agent comprises any one of the following structural formulas M1-M14:
  • the second aspect of the present application provides a perovskite solar cell, which includes the phosphorus-containing passivator of the first aspect of the present application.
  • a perovskite solar cell containing the phosphorus-containing passivator is prepared, and the phosphorus-containing passivator can coordinately passivate low-coordinated lead ion defects, interface defects and iodine ion vacancy defects, reduce the energy loss of charge in the perovskite light absorption layer and/or at the interface, and improve the photoelectric performance and stability of the perovskite solar cell.
  • the perovskite solar cell includes a perovskite light absorbing layer, and the perovskite light absorbing layer contains the phosphorus-containing passivator; the phosphorus-containing passivator is directly added when preparing the perovskite light absorbing layer to passivate the low-coordinated lead ion defects, interface defects and iodine ion vacancy defects of the perovskite light absorbing layer.
  • the mass proportion of the phosphorus-containing passivator in the perovskite light absorbing layer is 0.01%-1%; as an example, the mass proportion of the phosphorus-containing passivator in the perovskite light absorbing layer can be but not limited to 0.01%, 0.05%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.45%, 0.5%, 0.55%, 0.6%, 0.65%, 0.7%, 0.75%, 0.8%, 0.85%, 0.9%, 0.95%, 1% and the range between any two of the above values.
  • the mass proportion in the light absorbing layer is within the above range, the low-coordinated lead ion defects, interface defects and iodine ion vacancy defects of the perovskite light absorbing layer can be effectively passivated.
  • the mass proportion of the phosphorus-containing passivator in the perovskite light absorbing layer is 0.05%-0.5%.
  • the mass proportion of the above-mentioned phosphorus-containing passivator in the perovskite light absorbing layer can be determined by the following method: obtaining perovskite light absorbing layer powder, and determining the content of phosphorus in the light absorbing layer by elemental analysis method.
  • the perovskite solar cell includes a stacked perovskite light absorbing layer and a passivation layer, the passivation layer is located on the light-incoming side or the light-outgoing side of the perovskite light absorbing layer, and the passivation layer contains a phosphorus-containing passivator.
  • the passivation layer is formed on the upper surface or the lower surface of the perovskite light absorbing layer to passivate low-coordinated lead ion defects, interface defects, and iodine ion vacancy defects of the perovskite light absorbing layer.
  • the light-incoming side refers to the side where sunlight enters the perovskite light-absorbing layer
  • the light-exiting side refers to the side where sunlight exits the perovskite light-absorbing layer.
  • the thickness of the passivation layer is 0.1 nanometers to 10 nanometers (nm); as an example, the thickness of the passivation layer can be, but is not limited to, 0.1nm, 0.5nm, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, or a range between any two of the above values.
  • the thickness of the passivation layer is 1nm-10nm.
  • the thickness of the passivation layer mentioned above can be measured using instruments such as an ellipsometer and an atomic force microscope.
  • the perovskite light absorbing layer includes an active material having a molecular formula of ABX 3 or A 2 CDX 6 .
  • A includes one or more of organic cations and inorganic cations; further optionally, A includes one or more of monovalent amidine cations, monovalent amine cations and Cs + .
  • B includes one or more of organic cations and inorganic cations; further optionally, B includes one or more of Pb 2+ and Sn 2+ .
  • C includes one or more of organic cations and inorganic cations; further optionally, C includes Ag + .
  • D includes one or more of organic cations and inorganic cations; further optionally, D includes one or more of Bi 3+ , Sb 3+ , and In 3+ .
  • X includes one or more of organic anions and inorganic anions; further optionally, X includes one or more of Br- and I- .
  • the thickness of the perovskite light absorbing layer is 100nm-1000nm; as an example, the thickness of the perovskite light absorbing layer can be, but is not limited to, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, or a range between any two of the above values.
  • the thickness of the perovskite light absorbing layer is within the above range, it can effectively absorb sunlight and achieve optimal photoelectric conversion efficiency and stability.
  • the thickness of the perovskite light-absorbing layer mentioned above can be measured using instruments such as an ellipsometer and an atomic force microscope.
  • the band gap width of the perovskite light absorbing layer includes 1.2 electron volts to 2.3 electron volts (eV).
  • the band gap width of the perovskite light absorbing layer can be, but is not limited to, 1.2eV, 1.3eV, 1.4eV, 1.5eV, 1.6eV, 1.7eV, 1.8eV, 1.9eV, 2eV, 2.1eV, 2.2eV, 2.3eV, or a range between any two of the above values.
  • the band gap width of the perovskite light absorbing layer is within the above range, it can have a higher visible light absorption efficiency.
  • the band gap width of the perovskite light absorbing layer mentioned above can be measured by the following method: the absorption spectrum of the perovskite light absorbing layer is measured by a UV-visible spectrophotometer, and the emission spectrum of the perovskite light absorbing layer is measured by a photoluminescence fluorescence spectrometer.
  • the band gap width of the perovskite light absorbing layer can be calculated through the intersection of the absorption spectrum and the emission spectrum.
  • the perovskite solar cell further includes a transparent conductive substrate, an electron transport layer, a hole transport layer and an electrode layer; the transparent conductive substrate, the electron transport layer, the perovskite light absorbing layer, the hole transport layer and the electrode layer are stacked in sequence to form a formal device structure, and the perovskite light absorbing layer contains a phosphorus-containing passivator.
  • the perovskite solar cell further includes a transparent conductive substrate, an electron transport layer, a hole transport layer and an electrode layer; the transparent conductive substrate, the hole transport layer, the perovskite light absorbing layer, the electron transport layer and the electrode layer are sequentially stacked to form an inverted device structure, and the perovskite light absorbing layer contains a phosphorus-containing passivator.
  • FIG1 is a schematic diagram of the structure of a perovskite solar cell, wherein 11 represents a transparent conductive substrate, 12 represents an electron transport layer or a hole transport layer, 13 represents a perovskite light absorbing layer, and 14 represents a hole transport layer or an electron transport layer. 15 represents an electrode layer.
  • 12 represents an electron transport layer and 14 represents a hole transport layer
  • a transparent conductive substrate, an electron transport layer, a perovskite light absorbing layer, a hole transport layer and an electrode layer are sequentially stacked to form a formal device structure
  • the perovskite light absorbing layer contains a phosphorus-containing passivating agent.
  • a transparent conductive substrate When 12 represents a hole transport layer and 14 represents an electron transport layer, a transparent conductive substrate, a hole transport layer, a perovskite light absorbing layer, an electron transport layer and an electrode layer are sequentially stacked to form a trans-device structure, and the perovskite light absorbing layer contains a phosphorus-containing passivating agent.
  • the perovskite solar cell further includes a transparent conductive substrate, an electron transport layer, a hole transport layer and an electrode layer; the transparent conductive substrate, the electron transport layer, the passivation layer, the perovskite light absorbing layer, the hole transport layer and the electrode layer are sequentially stacked to form a formal device structure, and the passivation layer contains a phosphorus-containing passivator.
  • the perovskite solar cell further includes a transparent conductive substrate, an electron transport layer, a hole transport layer and an electrode layer; the transparent conductive substrate, the electron transport layer, the perovskite light absorbing layer, the passivation layer, the hole transport layer and the electrode layer are sequentially stacked to form a formal device structure, and the passivation layer contains a phosphorus-containing passivator.
  • FIG2 it is a schematic diagram of the structure of a perovskite solar cell, wherein 21 represents a transparent conductive substrate, 22 represents an electron transport layer, 23 represents a passivation layer or a perovskite light absorbing layer, 24 represents a perovskite light absorbing layer or a passivation layer, 25 represents a hole transport layer, and 26 represents an electrode layer.
  • 21 represents a transparent conductive substrate
  • 22 represents an electron transport layer
  • 23 represents a passivation layer or a perovskite light absorbing layer
  • 24 represents a perovskite light absorbing layer or a passivation layer
  • 25 represents a hole transport layer
  • 26 represents an electrode layer.
  • the transparent conductive substrate, the electron transport layer, the perovskite light absorbing layer, the passivation layer, the hole transport layer and the electrode layer are stacked in sequence to form a formal device structure, and the passivation layer contains a phosphorus-containing passivator.
  • the perovskite solar cell further comprises an electron transport layer, a barrier layer and an electrode layer located on the light-emitting side of the perovskite light-absorbing layer, wherein the electron transport layer, the barrier layer and the electrode layer are stacked in sequence, wherein the electron transport layer is closer to the perovskite light-absorbing layer.
  • the barrier layer can effectively block the transmission of holes and reduce the energy loss caused by charge recombination.
  • the material of the barrier layer includes one or more of 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline (BCP), SnO 2 , ZnO and cerium-containing oxides.
  • BCP 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline
  • SnO 2 SnO 2
  • ZnO cerium-containing oxides.
  • the barrier layer prepared with the above materials can have a lower valence band top, further improving the barrier layer's transport effect on holes.
  • the thickness of the barrier layer is 0.5 nm-20 nm.
  • the thickness of the barrier layer may be, but is not limited to, 0.50 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, or a range between any two of the above values.
  • the thickness of the barrier layer is within the above range, it can effectively block holes without being too thick to affect electron transport.
  • the thickness of the barrier layer mentioned above can be measured using instruments such as an ellipsometer and an atomic force microscope.
  • a perovskite solar cell includes a transparent conductive substrate, a hole transport layer, a passivation layer, a perovskite light absorbing layer, an electron transport layer, a blocking layer, and an electrode layer stacked in sequence; the passivation layer contains a phosphorus-containing passivator.
  • a perovskite solar cell includes a transparent conductive substrate, a hole transport layer, a perovskite light absorbing layer, a passivation layer, an electron transport layer, a blocking layer, and an electrode layer stacked in sequence; the passivation layer contains a phosphorus-containing passivator.
  • FIG3 it is a schematic diagram of the structure of a perovskite solar cell, wherein 31 represents a transparent conductive substrate, 32 represents a hole transport layer, 33 represents a passivation layer or a perovskite light absorbing layer, 34 represents a perovskite light absorbing layer or a passivation layer, 55 represents an electron transport layer, 36 represents a blocking layer, and 37 represents an electrode layer.
  • the transparent conductive substrate, the hole transport layer, the passivation layer, the perovskite light absorbing layer, the electron transport layer, the blocking layer and the electrode layer are stacked in sequence to form a trans-type device structure, and the passivation layer contains a phosphorus-containing passivating agent.
  • the transparent conductive substrate, the hole transport layer, the perovskite light absorbing layer, the passivation layer, the electron transport layer, the blocking layer and the electrode layer are stacked in sequence to form a trans-type device structure, and the passivation layer contains a phosphorus-containing passivating agent.
  • the transparent conductive substrate is used for light incidence.
  • the transparent conductive substrate comprises: a substrate and a conductive material layer; the conductive material layer is located on a side of the substrate adjacent to the perovskite light absorbing layer.
  • the conductive material in the conductive material layer includes one or more of fluorine-doped tin dioxide (FTO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), and indium-doped zinc oxide (IZO).
  • FTO fluorine-doped tin dioxide
  • ITO indium tin oxide
  • AZO aluminum-doped zinc oxide
  • BZO boron-doped zinc oxide
  • IZO indium-doped zinc oxide
  • the thickness of the transparent conductive substrate is 10nm-1000nm; the thickness of the transparent conductive substrate is When the thickness is within the above range, the conductivity can be increased while ensuring light transmission.
  • the thickness of the transparent conductive substrate can include but is not limited to: 10nm, 50nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm or a range consisting of any two of the above values.
  • the substrate may be, but is not limited to, a glass substrate or a flexible substrate;
  • the material of the flexible substrate may be, for example (but not limited to), an organic polymer material, and further, may be a mixture of one or more of the following materials in different proportions: including but not limited to polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), polydimethylsiloxane (PDMS), etc.
  • PVA polyvinyl alcohol
  • PET polyester
  • PI polyimide
  • PEN polyethylene naphthalate
  • PDMS polydimethylsiloxane
  • the electron transport layer can extract and transport electron carriers and block the passage of free holes.
  • the material used for the electron transport layer includes TiO2 , ZnO, SnO2 , [6,6]-phenyl C61 butyric acid methyl ester ( PC61BM ), [6,6]-phenyl C71 butyric acid methyl ester ( PC71BM ), fullerene C60 ( C60 ), fullerene C70 ( C70 ), naphthalene diimide (NDI) materials, perylene diimide (PDI) materials, and one or more of the derivatives, dopants, passivates and doped passivates of the above substances.
  • the thickness of the electron transport layer is 5 nm-100 nm.
  • the thickness of the electron transport layer may include, but is not limited to, 5 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or a range consisting of any two of the above values.
  • the electron transport effect can be optimized.
  • the hole transport layer can extract and transport hole carriers and block the passage of free electrons.
  • the materials used in the hole transport layer include metal oxides, polymers, small molecules, and one or more of the derivatives, dopants, passivates and doped passivates of the above substances.
  • the metal oxide includes one or more of nickel oxide, molybdenum oxide and tungsten oxide.
  • the polymer includes one or more of poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), poly[bis(4-phenyl)(4-butylphenyl)amine] (Poly-TPD).
  • PEDOT:PSS poly(styrene sulfonate)
  • PTAA poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]
  • Poly-TPD poly[bis(4-phenyl)(4-butylphenyl)amine]
  • the small molecule includes one or more of 4-(3,6-dimethylcarbazole-9-yl)butylphosphonic acid (Me-4PACZ), 2-(3,6-dimethoxycarbazole-9-yl)ethylphosphonic acid (MeO-2PACZ), and 4-(carbazole-9-yl)butylphosphonic acid (4PACZ).
  • Me-4PACZ 4-(3,6-dimethylcarbazole-9-yl)butylphosphonic acid
  • MeO-2PACZ 2-(3,6-dimethoxycarbazole-9-yl)ethylphosphonic acid
  • 4PACZ 4-(carbazole-9-yl)butylphosphonic acid
  • the thickness of the hole transport layer is 0.1 nm-100 nm.
  • the thickness of the hole transport layer may include, but is not limited to, 0.1 nm, 1 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or a range consisting of any two of the above values. When the thickness of the hole transport layer is within the above range, the hole transport effect can be optimized.
  • the material of the electrode layer includes one or more of an organic conductive material and an inorganic conductive material; optionally, the material used for the electrode layer includes one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide and indium-doped zinc oxide.
  • the thickness of the electrode layer is 10 nm-1000 nm.
  • the thickness of the electrode layer may include, but is not limited to: 10 nm, 50 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, or a range consisting of any two of the above values.
  • the internal electrons gain energy and break free from the constraints of the perovskite light-absorbing layer to form negatively charged electron carriers, and at the same time form positively charged hole carriers, thereby obtaining electron-hole pairs.
  • Free electrons and free holes are transmitted in opposite directions through the corresponding transport layer, so that electrons and holes flow, forming external current, and realizing the conversion of light energy into electrical energy.
  • the perovskite light-absorbing layer absorbs photons, it is stimulated to generate electron-hole pairs, and the electron-hole pairs further dissociate to form free carriers with opposite charges, among which the free electrons are transmitted to the positive electrode through the electron transport layer, and the free holes are transmitted to the negative electrode through the hole transport layer.
  • the two free carriers are collected by the corresponding electrodes respectively, and further form photocurrent in the circuit of the perovskite battery.
  • one of the transparent conductive substrate and the electrode layer serves as a positive electrode to collect electron carriers transmitted via the electron transport layer, and the other serves as a negative electrode to collect hole carriers transmitted via the hole transport layer.
  • the method for preparing a perovskite solar cell comprises the following steps: preparing an electron transport layer on a side of a transparent conductive substrate having a conductive material layer; preparing a perovskite light absorbing layer on a side of the electron transport layer away from the transparent conductive substrate, wherein the perovskite light absorbing layer contains a phosphorus-containing passivating agent; preparing a hole transport layer on a side of the perovskite light absorbing layer away from the electron transport layer.
  • the electrode layer is prepared on the side of the hole transport layer away from the perovskite light absorption layer.
  • the formal device structure is obtained by this method.
  • the preparation method of the perovskite solar cell includes the following steps: preparing a hole transport layer on the side of the transparent conductive substrate having the conductive material layer; preparing a perovskite light absorption layer on the side of the hole transport layer away from the transparent conductive substrate, the perovskite light absorption layer containing a phosphorus-containing passivating agent; preparing an electron transport layer on the side of the perovskite light absorption layer away from the hole transport layer; and preparing an electrode layer on the side of the electron transport layer away from the perovskite light absorption layer.
  • the method is used to prepare a transverse device structure.
  • the preparation method of the perovskite solar cell includes the following steps: preparing an electron transport layer on the side of the transparent conductive substrate having the conductive material layer; preparing a passivation layer on the side of the electron transport layer away from the transparent conductive substrate, the passivation layer containing a phosphorus-containing passivating agent; preparing a perovskite light absorption layer on the side of the passivation layer away from the electron transport layer; preparing a hole transport layer on the side of the perovskite light absorption layer away from the passivation layer; and preparing an electrode layer on the side of the hole transport layer away from the perovskite light absorption layer.
  • the formal device structure is prepared by this method.
  • the preparation method of the perovskite solar cell includes the following steps: preparing an electron transport layer on the side of the transparent conductive substrate having the conductive material layer; preparing a perovskite light absorption layer on the side of the electron transport layer away from the transparent conductive substrate, preparing a passivation layer on the side of the perovskite light absorption layer away from the electron transport layer, the passivation layer containing a phosphorus-containing passivating agent; preparing a hole transport layer on the side of the passivation layer away from the perovskite light absorption layer; preparing an electrode layer on the side of the hole transport layer away from the passivation layer.
  • the formal device structure is prepared by this method.
  • the preparation method of the perovskite solar cell includes the following steps: preparing a hole transport layer on the side of the transparent conductive substrate having the conductive material layer; preparing a passivation layer on the side of the hole transport layer away from the transparent conductive substrate, the passivation layer containing a phosphorus-containing passivating agent; preparing a perovskite light absorption layer on the side of the passivation layer away from the hole transport layer; preparing an electron transport layer on the side of the perovskite light absorption layer away from the passivation layer; preparing a barrier layer on the side of the electron transport layer away from the perovskite light absorption layer; and preparing an electrode layer on the side of the barrier layer away from the electron transport layer.
  • the method is used to prepare a transverse device structure.
  • the preparation method of the perovskite solar cell includes the following steps: preparing a hole transport layer on the side of the transparent conductive substrate having the conductive material layer; preparing a perovskite light absorption layer on the side of the hole transport layer away from the transparent conductive substrate; preparing a passivation layer on the side of the perovskite light absorption layer away from the hole transport layer, the passivation layer containing a phosphorus passivating agent; preparing an electron transport layer on the side of the passivation layer away from the perovskite light absorption layer; preparing a barrier layer on the side of the electron transport layer away from the perovskite light absorption layer; and preparing an electrode layer on the side of the barrier layer away from the electron transport layer.
  • the method is used to prepare a trans-type device structure.
  • the passivation layer may be prepared by one of spin coating, spray coating, doctor blade coating, slot coating and roll-to-roll printing.
  • preparing the passivation layer includes the step of preparing a passivation layer slurry, and the solvent used in preparing the passivation layer slurry includes one or more of water, methanol, ethanol, isopropanol, N,N-dimethylformamide, dimethyl sulfoxide, chloroform, chlorobenzene and toluene, and the concentration of the phosphorus-containing passivator in the passivation layer slurry is 0.001 mg/mL-10 mg/mL; for example, the concentration of the phosphorus-containing passivator in the passivation layer slurry can be but is not limited to 0.001 mg/mL, 0.01 mg/mL, 0.1 mg/mL, 1 mg/mL, 2 mg/mL, 3 mg/mL, 4 mg/mL, 5 mg/mL, 6 mg/mL, 7 mg/mL, 8 mg/mL, 9 mg/mL, 10 mg/mL or a range between any two
  • the structure of the perovskite battery involved in the present application may not be limited to the structural layers listed above.
  • Other functional layers, such as buffer layers, may also be introduced as required.
  • the perovskite battery may be provided with a buffer layer with a suitable energy level, which may play a role in reducing energy level barriers, promoting energy level matching, improving carrier extraction efficiency, and at the same time, passivating interface defect states, protecting light absorption layers, inhibiting water molecules, oxygen oxidation and decomposition of batteries, improving photoelectric conversion efficiency, and improving the stability of perovskite batteries.
  • a buffer layer with a suitable energy level which may play a role in reducing energy level barriers, promoting energy level matching, improving carrier extraction efficiency, and at the same time, passivating interface defect states, protecting light absorption layers, inhibiting water molecules, oxygen oxidation and decomposition of batteries, improving photoelectric conversion efficiency, and improving the stability of perovskite batteries.
  • the type of buffer layer may include a buffer layer between the hole transport layer and the anode, a buffer layer between the electron transport layer and the cathode, a buffer layer between the hole transport layer and the absorption layer, and a buffer layer between the electron transport layer and the absorption layer.
  • the materials that can be used for the buffer layer in the perovskite battery may include, but are not limited to: Cu2O , NiO, AZO, TiO2 , etc.
  • the third aspect of the present application provides a photovoltaic module, comprising the perovskite solar cell of the second aspect of the present application.
  • the above-mentioned perovskite solar cells have high photoelectric conversion efficiency and good stability, and can improve the photoelectric efficiency and stability of photovoltaic modules.
  • the above includes one or more perovskite solar cells, which can be selected according to the specific application scenario; further, the above photovoltaic module includes multiple perovskite solar cells, and the multiple perovskite solar cells are connected in series or in parallel to form a battery cell.
  • the photovoltaic module further includes a photovoltaic glass layer, a bonding layer and a back sheet.
  • Adhesive layers are respectively arranged on the two surfaces of the solar cell, a back plate is arranged on the surface of one of the adhesive layers away from the solar cell, and a photovoltaic glass layer is arranged on the surface of the other adhesive layer away from the solar cell.
  • the photovoltaic glass layer and the back panel are used to protect the perovskite solar cells, and have the functions of sealing, insulation and waterproofing; the bonding layer plays the role of bonding the photovoltaic glass layer to the battery cell, and bonding the back panel to the battery cell.
  • the photovoltaic glass layer is made of tempered glass
  • the back panel is made of TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer)
  • the adhesive layer is made of EVA (polyethylene-polyvinyl acetate copolymer).
  • the above photovoltaic assembly also includes a junction box and an outer frame.
  • the junction box is used to protect the power generation system of the entire photovoltaic module. It is equivalent to a current transfer station. When a battery cell short-circuits, the junction box will automatically disconnect the short-circuited battery string.
  • the outer frame can support and protect the entire photovoltaic module.
  • the frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.
  • connection between the frame and other parts of the photovoltaic module is bonded and sealed by silicone.
  • the photovoltaic module can convert solar energy into electrical energy, or send it to a battery for storage, or drive a load to work.
  • the photovoltaic component is a solar panel.
  • a fourth aspect of the present application provides a photovoltaic system, comprising the photovoltaic assembly of the third aspect of the present application.
  • the photovoltaic system utilizes the perovskite solar cells in the above photovoltaic modules to directly convert solar radiation energy into electrical energy with high efficiency and good stability; further, the above photovoltaic system is a photovoltaic power generation system.
  • Photovoltaic modules are the core part of photovoltaic power generation systems.
  • the above photovoltaic system includes one or more photovoltaic modules, which can be selected according to specific application scenarios; further, when the above photovoltaic system includes multiple photovoltaic modules, the multiple photovoltaic modules form a photovoltaic array.
  • the above photovoltaic system can be an independent photovoltaic power generation system or a grid-connected photovoltaic power generation system.
  • An independent photovoltaic power generation system includes a photovoltaic array, a battery pack, a charging controller, a power electronic converter (inverter), a load, etc. Its working principle is that the solar radiation energy is first converted into electrical energy through the photovoltaic array, and then converted by the power electronic converter to supply power to the load. At the same time, the excess electrical energy is stored in the energy storage device in the form of chemical energy after passing through the charging controller. In this way, when the sunshine is insufficient, the energy stored in the battery can be converted into AC 220V, 50Hz electrical energy after being stepped up by the power electronic inverter, filtering and power frequency transformer for use by the AC load.
  • the grid-connected photovoltaic power generation system includes a photovoltaic array, a high-frequency DC/DC boost circuit, a power electronic converter (inverter) and system monitoring. Its working principle is that the solar radiation energy is converted by the photovoltaic array, and then converted into high-voltage DC power by high-frequency DC conversion, and then inverted by the power electronic inverter to output a sinusoidal AC current with the same frequency as the grid voltage to the grid.
  • the above two photovoltaic power generation systems have their own characteristics and can be selected according to specific application scenarios.
  • the present application provides an electrical device, comprising the perovskite solar cell of the second aspect of the present application.
  • the perovskite solar cell can be used as a power generation device of an electrical device.
  • the type of the power generation device can include but is not limited to integrated power generation.
  • the location of the power generation device can include but is not limited to the roof, back panel, etc. of a car.
  • the above-mentioned electrical devices may include mobile devices, such as mobile phones, laptop computers, etc., electric vehicles, electric trains, ships and satellites, power generation systems, etc., but are not limited thereto.
  • Fig. 4 is an example of an electric device, which is a car, and can further be a pure electric vehicle, a hybrid electric vehicle, or a plug-in hybrid electric vehicle.
  • the electric device may be a mobile phone, a tablet computer, a laptop computer, a calculator, etc.
  • the power-consuming device may be a wearable device, such as a watch.
  • Process 1 Add 1.86g of compound 1 and 10mL of tetrahydrofuran to three-necked flask 1. After compound 1 is dissolved, the temperature is lowered to -78°C, and 4mL of 2.5M n-butyl lithium (n-BuLi) in n-hexane solution is added dropwise to three-necked flask 1, and stirred for 2h for later use. Add 2.81g of compound 2 and 10mL of tetrahydrofuran to three-necked flask 2. After compound 2 is dissolved, the solution in three-necked flask 1 is added dropwise to three-necked flask 2, and stirred for 12h.
  • n-BuLi 2.5M n-butyl lithium
  • Process 2 340 mg of compound 3, 76 mg of trimethylphosphine (P(CH 3 ) 3 ) and 10 mL of o-dichlorobenzene (o-DCB) were added to a three-necked flask 3 and heated at 160°C for 12 h. After the reaction, the precipitate was dissolved in 10 mL of water. The aqueous phase was washed three times with 10 mL ⁇ 3 dichloromethane. Finally, the water was removed by vacuum distillation to obtain 408 mg of phosphorus-containing passivator M1 with a yield of 98%.
  • P(CH 3 ) 3 trimethylphosphine
  • o-DCB o-dichlorobenzene
  • FTO conductive glass with a specification of 2.0*2.0 cm were taken, and 0.35 cm of FTO was removed from both ends by laser etching to expose the glass substrate.
  • the etched FTO conductive glass was ultrasonically cleaned several times with water, acetone, and isopropanol in sequence.
  • the FTO conductive glass was blown dry with a nitrogen gun, and was further cleaned in an ultraviolet ozone machine; wherein the FTO conductive glass refers to glass obtained by forming a conductive material layer on one surface of a glass substrate using fluorine-doped tin dioxide as a conductive material;
  • the obtained wafer is placed in a vapor deposition machine to vapor deposit a metal electrode Cu to prepare an electrode layer with a thickness of about 100 nm.
  • the preparation methods of perovskite solar cells in Examples 2-18 and 21-24 are basically similar to the preparation method of perovskite solar cells in Example 1, and the main differences are: at least one of the type and/or amount of phosphorus-containing passivator, the material type of the barrier layer, the thickness of the barrier layer, the material type of the perovskite light absorbing layer, the thickness of the perovskite light absorbing layer, the type and/or thickness of the transparent conductive substrate, the type and/or thickness of the electron transport layer, the type and/or thickness of the hole transport layer, and the type and/or thickness of the electrode layer is different, see Table 1 for details.
  • the main difference between the preparation method of the perovskite solar cell in Example 19 and the preparation method of the perovskite solar cell in Example 1 is that the phosphorus-containing passivator M1 is not added to the perovskite light-absorbing layer.
  • 0.5 mg/mL of an isopropanol solution dissolved with the phosphorus-containing passivator M1 is spin-coated on the surface of the perovskite light-absorbing layer at a rotation speed of 3000 rpm to prepare a passivation layer with a thickness of 5 nm.
  • the main difference between the preparation method of the perovskite solar cell in Example 20 and the preparation method of the perovskite solar cell in Example 1 is that the phosphorus-containing passivator M1 is not added to the perovskite light absorbing layer, and after the hole transport layer is prepared, a 0.5 mg/mL isopropanol solution dissolved with the phosphorus-containing passivator M1 is spin coated on the surface of the hole transport layer at a speed of 3000 rpm to prepare a passivation layer with a thickness of 5 nm.
  • the difference between the method for preparing the perovskite solar cell in Examples 25-26 and the method for preparing the perovskite solar cell in Example 19 is that the thickness of the passivation layer is different, as shown in Table 1 for details.
  • Comparative Example 1 Comparative Example 1 and Example 21 is that no phosphorus-containing passivating agent is added, and the other aspects are the same, as shown in Table 1 for details.
  • Comparative Example 2 The difference between Comparative Example 2 and Example 21 is that a passivator X having the following structure is used to replace the phosphorus-containing passivator M1, and the other parts are the same. See Table 1 for details.
  • Comparative Example 3 The difference between Comparative Example 3 and Example 1 is that a passivator Y having the following structure is used to replace the phosphorus-containing passivator M1, and the other parts are the same. See Table 1 for details.
  • n1 represents the mass proportion of the phosphorus-containing passivator in the perovskite light-absorbing layer
  • BCP represents 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline
  • PC 61 BM represents [6,6]-phenyl C 61 butyric acid methyl ester
  • FTO represents fluorine-doped tin dioxide, in which the fluorine doping amount is 5 atomic percentage
  • M1 upper passivation means that after the perovskite light-absorbing layer is prepared, a passivation layer is prepared on the surface of the perovskite light-absorbing layer
  • M2 lower passivation means that after the hole transport layer is prepared, a passivation layer is prepared on the surface of the hole transport layer.
  • the thicknesses of the hole transport layer, electron transport layer, perovskite light absorbing layer, passivation layer, barrier layer and electrode layer in the above-mentioned embodiments and comparative examples are measured by atomic force microscopy.
  • a solar simulator produced by Guangyan was used to conduct tests according to the national standard IEC61215.
  • a crystalline silicon solar cell was used to calibrate the light intensity to achieve the same sunlight intensity, AM 1.5.
  • the perovskite solar cells in the above embodiments and comparative examples were respectively connected to a digital source meter, and the photoelectric conversion efficiency was measured on the 3rd and 30th days under illumination. The results are shown in Table 2.
  • Example 1 The difference between Example 1 and Examples 21-24 is that the mass proportion of the phosphorus-containing passivator in the perovskite light-absorbing layer is different. From the results of Examples 1 and Examples 21-24, it can be seen that when the content of M1 added in the perovskite layer is about 0.1%, the perovskite battery device shows better efficiency and higher stability.
  • Example 19 The difference between Example 19 and Examples 25-26 is that the thickness of the passivation layer is different. From the results of Examples 19 and Examples 25-26, it can be seen that when M1 is formed alone on the interface of the perovskite layer with a thickness of about 5 nm, the perovskite battery device performs The output efficiency is better and the stability is higher.

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Abstract

一种含磷钝化剂、钙钛矿太阳能电池、光伏组件、光伏系统及用电装置；其中的含磷钝化剂包括离子化合物，离子化合物包括阳离子基团，阳离子基团具有如式(I)所示的结构：A-L-B(I)；其中，A表示带有孤对电子的有机磷基团，B表示带有正电荷的有机磷盐基团，L表示所述有机磷基团和所述有机磷盐基团之间的连接基团。有机磷基团的孤对电子可与钙钛矿吸光层体相和/或上下界面处不饱和配位的铅离子形成较强的P-Pb配位键，钝化低配位铅离子缺陷；有机磷盐基团可在钙钛矿层上下界面处形成低维钙钛矿，钝化钙钛矿层界面，抑制离子迁移；通过有机磷基团和有机磷盐基团的协同作用可提高钙钛矿太阳能电池的光电性能和稳定性。

Description

含磷钝化剂、钙钛矿太阳能电池、光伏组件、光伏系统及用电装置
本申请引用于2023年06月14日递交的名称为“含磷钝化剂、钙钛矿太阳能电池、光伏组件、光伏系统及用电装置”的第202310708422.3号中国专利申请，其通过引用被全部并入本申请。
技术领域
本申请涉及太阳能电池技术领域，特别涉及一种含磷钝化剂、钙钛矿太阳能电池、光伏组件、光伏系统及用电装置。
背景技术
钙钛矿太阳能电池属于第三代太阳能电池，具有优异的光电特性、高光吸收系数、载流子寿命长及扩散长度较长等诸多特点，已成为第三代新型太阳能电池中的佼佼者。
然而，钙钛矿太阳能电池在制备成薄膜时，体相及表面会存在大量缺陷，包括深能级陷阱的低配位Pb2+、Pb团簇、低配位卤化物离子、离子迁移产生的反位缺陷PbI3 -，浅能级缺陷的卤素X-空位和A位阳离子空位，而大量缺陷的存在影响钙钛矿太阳能电池的光电性能及其稳定性。
发明内容
本申请是鉴于上述课题而进行的，其目的包括，提供一种含磷钝化剂、钙钛矿太阳能电池、光伏组件、光伏系统及用电装置，以提高钙钛矿太阳能电池的光电性能和稳定性。
本申请是通过如下的技术方案实现的。
本申请的第一方面提供一种含磷钝化剂，所述含磷钝化剂包括离子化合物，所述离子化合物包括阳离子基团；所述阳离子基团具有如下式(I)所示的结构：
A-L-B
(I)
其中，A表示带有孤对电子的有机磷基团，B表示带有正电荷的有机磷盐基团，L表示所述有机磷基团和所述有机磷盐基团之间的连接基团。
本申请的含磷钝化剂中含有带有孤对电子的有机磷基团和带有正电荷的有机磷盐基团，有机磷基团的孤对电子可与钙钛矿吸光层体相和/或上下界面处不饱和配位的铅离子形成较强的P-Pb配位键，钝化低配位铅离子缺陷；有机磷盐基团可在钙钛矿层上下界面处形成低维钙钛矿，钝化钙钛矿层界面，抑制离子迁移；因此，通过有机磷基团和有机磷盐基团的协同作用可提高钙钛矿太阳能电池的光电性能和稳定性。
在一些实施例中，所述离子化合物还包括阴离子基团，所述阴离子基团包括卤素阴离子、类卤素阴离子、四氟硼酸根离子、六氟磷酸根离子和二甲磺酰胺根离子中的一种或多种。卤素阴离子和含卤素的阴离子基团可分别钝化碘离子空位，减少能量损失。
在一些实施例中，所述L包括取代或未取代的亚烷基、取代或未取代的亚环烷基以及取代或未取代的芳基亚芳基中的一种或多种。
在一些实施例中，所述含磷钝化剂具有如下式(II)所示的结构：

其中，R1、R2、R3、R4、R5包括取代或未取代的烷基、取代或未取代的环烷基以及取代或未取代的芳基中的任意一种；
L包括取代或未取代的亚烷基、取代或未取代的亚环烷基、取代或未取代的芳基亚芳基中的任意一种；
X包括卤素阴离子和含卤素的阴离子基团中的任意一种；
1≤n1≤4，1≤n2≤10，1≤n3≤4，n1、n2、n3为整数。
在一些实施例中，所述R1、所述R2、所述R3、所述R4、所述R5包括碳原子数为1-10的烷基、碳原子数为1-10的环烷基、苯基以及取代的苯基中的任意一种；所述取代的苯基中具有的取代基包括卤素、烷基、环烷基、烷氧基、烷硫基、烷硅基和烷氧硅基中的一种或多种；
可选地，所述取代的苯基中具有的取代基包括卤素、碳原子数为1-10的烷基、碳原子数为1-10的环烷基、碳原子数为1-10的烷氧基、碳原子数为1-10的烷硫基、碳原子数为1-10的烷硅基和碳原子数为1-10的烷氧硅基中的一种或多种。
在一些实施例中，所述R1、所述R2包括碳原子数为1-10的环烷基和苯基中的任意一种；
可选地，所述R1、所述R2相同地包括碳原子数为1-10的环烷基和苯基中的任意一种。
在一些实施例中，所述R3、所述R4、所述R5包括碳原子数为1-10的烷基中的任意一种；
可选地，所述R3、所述R4、所述R5相同地包括碳原子数为1-10的烷基中的任意一种。
在一些实施例中，所述L包括碳原子数为1-10的亚烷基、碳原子数为1-10的亚环烷基、亚苯基以及取代的亚苯基中的任意一种；所述取代的亚苯基中具有的取代基包括卤素、烷基、环烷基、烷氧基、烷硫基、烷硅基和烷氧硅基中的一种或多种；
可选地，所述取代的亚苯基中具有的取代基包括卤素、碳原子数为1-10的烷基、碳原子数为1-10的环烷基、碳原子数为1-10的烷氧基、碳原子数为1-10的烷硫基、碳原子数为1-10的烷硅基以及碳原子数为1-10的烷氧硅基中的一种或多种。
在一些实施例中，所述L包括碳原子数为1-10的亚烷基中的任意一种。
在一些实施例中，所述X包括碘离子和四氟化硼离子中的任意一种。
在一些实施例中，所述含磷钝化剂包括以下结构式中的任意一种：

本申请的第二方面提供了一种钙钛矿太阳能电池，所述钙钛矿太阳能电池包含本申请第一方面的含磷钝化剂。通过制备过程中加入含磷钝化剂，制备得到含有含磷钝化剂的钙钛矿太阳能电池，含磷钝化剂可协调钝化低配位铅离子缺陷、界面缺陷和碘离子空位缺陷，减少电荷在钙钛矿吸光层体现和/或界面处的能量损失，提高钙钛矿太阳能电池的光电性能和稳定性。
在一些实施例中，所述钙钛矿太阳能电池包括钙钛矿吸光层，所述钙钛矿吸光层包含所述含磷钝化剂；在制备钙钛矿吸光层时直接加入含磷钝化剂，钝化钙钛矿吸光层的低配位铅离子缺陷、界面缺陷和碘离子空位缺陷。
可选地，所述含磷钝化剂在所述钙钛矿吸光层中的质量占比为0.01％-1％；可选为0.05％-0.5％。含磷钝化剂在钙钛矿吸光层中的质量占比在上述范围内时，可有效钝化钙钛矿吸光层的低配位铅离子缺陷、界面缺陷和碘离子空位缺陷。
在一些实施例中，所述钙钛矿太阳能电池包括层叠设置的钙钛矿吸光层和钝化层，所述 钝化层位于所述钙钛矿吸光层的入光侧或出光侧，所述钝化层包含所述含磷钝化剂；可选地，所述钝化层的厚度为0.1nm-10nm；可选为1nm-10nm。
在钙钛矿吸光层的上表面或下表面形成钝化层，可钝化钙钛矿吸光层的低配位铅离子缺陷、界面缺陷和碘离子空位缺陷；钝化层的厚度在上述范围内时，可有效钝化钙钛矿吸光层的低配位铅离子缺陷、界面缺陷和碘离子空位缺陷。
在一些实施例中，所述钙钛矿吸光层包括分子式为ABX3或A2CDX6的活性材料；
可选地，所述分子式为ABX3或A2CDX6的活性材料具有下述特征中的至少一项：
(1)A包括有机阳离子和无机阳离子中的一种或多种；可选地，所述A包括一价脒基阳离子、一价胺基阳离子和Cs+中的一种或多种；
(2)B包括有机阳离子和无机阳离子中的一种或多种；可选地，所述B包括Pb2+和Sn2+中的一种或多种；
(3)C包括有机阳离子和无机阳离子中的一种或多种；可选地，所述C包括Ag+；
(4)D包括有机阳离子和无机阳离子中的一种或多种；可选地，所述D包括Bi3+、Sb3+、和In3+中的一种或多种；
(5)X包括有机阴离子和无机阴离子中的一种或多种；可选地，所述X包括Br-和I-中的一种或多种。
在一些实施例中，所述钙钛矿吸光层具有下述特征中的至少一项：
(1)所述钙钛矿吸光层的厚度为100nm-1000nm；
(2)所述钙钛矿吸光层的带隙宽度包括1.2eV-2.3eV。
钙钛矿吸光层的厚度在上述范围内时，可有效吸收太阳光，实现最佳的光电转换效率和稳定性。钙钛矿吸光层的带隙宽度在上述范围内时，可具有较高的可见光吸收效率。
在一些实施例中，所述钙钛矿太阳能电池还包括位于所述钙钛矿吸光层的出光侧的电子传输层、阻挡层和电极层，所述电子传输层、所述阻挡层和所述电极层依次层叠设置，其中所述电子传输层更临近所述钙钛矿吸光层；
可选地，所述阻挡层的材料包括2,9-二甲基-4,7-联苯-1,10-邻二氮杂菲、SnO2、ZnO以及含铈氧化物中的一种或多种；
可选地，所述阻挡层的厚度为0.5nm-20nm。
阻挡层可有效阻挡空穴的传输，减少由于电荷复合而引起的能量损失；采用上述材料制备阻挡层，可使得阻挡层具有较低的价带顶，进一步提高阻挡层对于空穴的传输作用；阻挡层的厚度在上述范围内时，即可以有效阻隔空穴，又不至于过厚影响电子传输。
本申请的第三方面提供了一种光伏组件，包括本申请第二方面的钙钛矿太阳能电池。钙钛矿太阳能电池的光电转换效率高且稳定性好，可提高光伏组件的光电效率和稳定性。
本申请的第四方面提供了一种光伏系统，包括本申请第三方面的光伏组件。光伏系统利用光伏组件中的钙钛矿太阳能电池，将太阳辐射能直接转换成电能，效率高、稳定性好。
本申请的第五方面提供了一种用电装置，包括本申请第二方面的钙钛矿太阳能电池。
附图说明
为了更清楚地说明本申请的技术方案，下面将对本申请中所使用的附图作简单介绍。显而易见地，下面所描述的附图仅仅是本申请的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据附图获得其他的附图。
图1是本申请一实施方式提供的钙钛矿太阳能电池的结构示意图。
图2是本申请一实施方式提供的钙钛矿太阳能电池的结构示意图。
图3是本申请一实施方式提供的钙钛矿太阳能电池的结构示意图。
图4是本申请一实施方式的钙钛矿太阳能电池用作电源的用电装置的示意图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了 本申请的较佳实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。
本申请中，以开放式描述的技术特征中，包括所列举特征组成的封闭式技术方案，也包括包含所列举特征的开放式技术方案。
为了简明，本文仅具体地公开了一些数值范围。然而，任意下限可以与任意上限组合形成未明确记载的范围；以及任意下限可以与其它下限组合形成未明确记载的范围，同样任意上限可以与任意其它上限组合形成未明确记载的范围。此外，每个单独公开的点或单个数值自身可以作为下限或上限与任意其它点或单个数值组合或与其它下限或上限组合形成未明确记载的范围。
本申请所公开的“范围”以下限和上限的形式来限定，给定范围是通过选定一个下限和一个上限进行限定的，选定的下限和上限限定了特别范围的边界。这种方式进行限定的范围可以是包括端值或不包括端值的，并且可以进行任意地组合，即任何下限可以与任何上限组合形成一个范围。例如，如果针对特定参数列出了60-120和80-110的范围，理解为60-110和80-120的范围也是预料到的。此外，如果列出的最小范围值1和2，和如果列出了最大范围值3，4和5，则下面的范围可全部预料到：1-3、1-4、1-5、2-3、2-4和2-5。在本申请中，除非有其他说明，数值范围“a-b”表示a到b之间的任意实数组合的缩略表示，其中a和b都是实数。例如数值范围“0-5”表示本文中已经全部列出了“0-5”之间的全部实数，“0-5”只是这些数值组合的缩略表示。另外，当表述某个参数为≥2的整数，则相当于公开了该参数为例如整数2、3、4、5、6、7、8、9、10、11、12等。
本申请中，涉及到数值区间，如无特别说明，上述数值区间内视为连续，且包括该范围的最小值及最大值，以及这种最小值与最大值之间的每一个值。进一步地，当范围是指整数时，包括该范围的最小值与最大值之间的每一个整数。此外，当提供多个范围描述特征或特性时，可以合并该范围。换言之，除非另有指明，否则本文中所公开之所有范围应理解为包括其中所归入的任何及所有的子范围。
如果没有特别的说明，本申请的所有实施方式以及可选实施方式可以相互组合形成新的技术方案。
如果没有特别的说明，本申请的所有技术特征以及可选技术特征可以相互组合形成新的技术方案。
如果没有特别的说明，本申请的所有步骤可以顺序进行，也可以随机进行，优选是顺序进行的。例如，所述方法包括步骤(a)和(b)，表示所述方法可包括顺序进行的步骤(a)和(b)，也可以包括顺序进行的步骤(b)和(a)。例如，所述提到所述方法还可包括步骤(c)，表示步骤(c)可以任意顺序加入到所述方法，例如，所述方法可以包括步骤(a)、(b)和(c)，也可包括步骤(a)、(c)和(b)，也可以包括步骤(c)、(a)和(b)等。
如果没有特别的说明，本申请所提到的“包括”和“包含”表示开放式，也可以是封闭式。例如，所述“包括”和“包含”可以表示还可以包括或包含没有列出的其他组分，也可以仅包括或包含列出的组分。
在本文的描述中，需要说明的是，除非另有说明，“以上”、“以下”为包括本数，“一种或几种”中“几种”的含义是两种及两种以上。
在本文的描述中，除非另有说明，术语“或(or)”是包括性的。也就是说，短语“A或(or)B”表示“A，B，或A和B两者”。更具体地，以下任一条件均满足条件“A或B”：A为真(或存在)并且B为假(或不存在)；A为假(或不存在)而B为真(或存在)；或A和B都为真(或存在)。除非另有说明，本申请中使用的术语具有本领域技术人员通常所理解的公知含义。除非另有说明，本申请中提到的各参数的数值可以用本领域常用的各种测量方法进行测 量(例如，可以按照在本申请的实施例中给出的方法进行测试)。
相关技术中，钙钛矿太阳能电池在制备成薄膜时，体相及表面会产生大量缺陷，这些缺陷的存在影响钙钛矿太阳能电池的光电性能及其稳定性，钝化缺陷是制备钙钛矿太阳能电池时亟需解决的问题。
目前，填补这些缺陷的方法主要可分为路易斯酸、路易斯碱、阴离子、阳离子钝化等，现有报导的路易斯碱钝化剂多为含氮、硫、氧等原子的分子或离子，钝化效果有限。
基于上述问题，本申请的第一方面提供了一种含磷钝化剂，该含磷钝化剂包括离子化合物，离子化合物包括阳离子基团，阳离子基团具有如下式(I)所示的结构：
A-L-B
(I)
其中，A表示带有孤对电子的有机磷基团，B表示带有正电荷的有机磷盐基团，L表示所述有机磷基团和所述有机磷盐基团之间的连接基团。
需要说明的是，阳离子基团中含有的有机磷基团的个数可以为一个，也可以为多个，可根据实际需要设定；阳离子基团中含有的有机磷盐基团的个数可以为一个，也可以为多个，可根据实际需要设定。有机磷盐基团中可以带有一个正电荷，也可以带有多个正电荷。
阳离子基团中的有机磷基团和有机磷盐基团通过基团L进行连接。
可理解地，含磷钝化剂中含有带有孤对电子的有机磷基团和带有正电荷的有机磷盐基团，有机磷基团的孤对电子可与钙钛矿吸光层体相和/或上下界面处不饱和配位的铅离子形成较强的P-Pb配位键，钝化低配位铅离子缺陷；有机磷盐基团可在钙钛矿层上下界面处形成低维钙钛矿，钝化钙钛矿层界面，抑制离子迁移；因此，通过有机磷基团和有机磷盐基团的协同作用可提高钙钛矿太阳能电池的光电性能和稳定性。
在一些实施方式中，离子化合物还包括阴离子基团，所述阴离子基团包括卤素阴离子、类卤素阴离子、四氟硼酸根离子、六氟磷酸根离子和二甲磺酰胺根离子中的一种或多种。卤素阴离子和含卤素的阴离子基团可分别钝化碘离子空位，减少能量损失。
需要说明的是，卤素阴离子是指由卤族元素得到一个电子后形成的阴离子。含卤素的阴离子基团是指由卤族元素和其他元素共同形成的阴离子基团。
本申请的离子化合物含有的有机磷基团、有机磷盐基团以及卤素阴离子和/或含卤素的阴离子基团，可协调钝化低配位铅离子缺陷、界面缺陷和碘离子空位缺陷，减少电荷在钙钛矿吸光层体现和/或界面处的能量损失，提高钙钛矿太阳能电池的光电性能和稳定性。
在一些实施方式中，L包括取代或未取代的亚烷基、取代或未取代的亚环烷基以及取代或未取代的亚芳基中的一种或多种。
亚烷基指在烷基的基础上除去一个氢原子衍生形成具有两个单价基团中心的烃基，其可以是饱和的支链烷基或饱和的直链烷基。例如，“C1～C9亚烷基”是指烷基部分包含1～9个碳原子，每次出现时，可以互相独立地为C1亚烷基、C4亚烷基、C5亚烷基、C6亚烷基、C7亚烷基、C8亚烷基或C9亚烷基。合适的实例包括但不限于：亚甲基(-CH2-)、1,1-亚乙基(-CH(CH3)-)、1,2-亚乙基(-CH2CH2-)、1,1-亚丙基(-CH(CH2CH3)-)、1,2-亚丙基(-CH2CH(CH3)-)、1,3-亚丙基(-CH2CH2CH2-)和1,4-亚丁基(-CH2CH2CH2CH2-)。
亚环烷基是指在环烷基的基础上除去一个氢原子衍生形成具有两个单价基团中心的包含环碳原子的非芳香族烃，可以为单亚环烷基、或螺亚环烷基、或桥亚环烷基。包含该术语的短语，例如，“C3～C9亚环烷基”是指包含3～9个碳原子的亚环烷基，每次出现时，可以互相独立地为亚环丙烷基、亚环丁烷基、亚环戊烷基、亚环己烷基、亚环庚烷基、亚辛环烷基或亚壬环烷基。此外，亚环烷基还可含有一个或多个双键，含有双键的亚环烷基的代表性实例包括亚环戊烯基、亚环己烯基、亚环己二烯基和亚环丁二烯基。
亚芳基是指在芳香环化合物的基础上除去两个氢原子衍生形成的芳族烃基，可以为单环亚芳基、或稠环亚芳基、或多环亚芳基，对于多环的环种，至少一个是芳族环系。例如，“C6～C20亚芳基”是指包含6～20个碳原子的亚芳基，每次出现时，可以互相独立地为C6亚芳基、C10 亚芳基、C14亚芳基、C18亚芳基或C20亚芳基。
作为一种可能的实施方式，含磷钝化剂具有如下式(II)所示的结构：
其中，R1、R2、R3、R4、R5包括取代或未取代的烷基、取代或未取代的环烷基以及取代或未取代的芳基中的任意一种；
L包括取代或未取代的亚烷基、取代或未取代的亚环烷基、取代或未取代的亚芳基中的任意一种；
X包括卤素阴离子和含卤素的阴离子基团中的任意一种；
1≤n1≤4，1≤n2≤10，1≤n3≤4，n1、n2、n3为整数。
需要说明的是，R1、R2、R3、R4、R5分别包括取代或未取代的烷基、取代或未取代的环烷基以及取代或未取代的芳基中的任意一种。n1、n2、n3分别为整数。
烷基是指包含伯(正)碳原子、或仲碳原子、或叔碳原子、或季碳原子、或其组合的饱和烃。包含该术语的短语，例如，“C1～C9烷基”是指包含1～9个碳原子的烷基，每次出现时，可以互相独立地为C1烷基、C2烷基、C3烷基、C4烷基、C5烷基、C6烷基、C7烷基、C8烷基或C9烷基。
环烷基是指包含环碳原子的非芳香族烃，可以为单环烷基、或螺环烷基、或桥环烷基。包含该术语的短语，例如，“C3～C9环烷基”是指包含3～9个碳原子的环烷基，每次出现时，可以互相独立地为C3环烷基、C4环烷基、C5环烷基、C6环烷基、C7环烷基、C8环烷基或C9环烷基。合适的实例包括但不限于：环丙基、环丁基、环戊基、环己基和环庚基。另外，“环烷基”还可含有一个或多个双键，含有双键的环烷基的代表性实例包括环戊烯基、环己烯基、环己二烯基和环丁二烯基。
芳基是指在芳香环化合物的基础上除去一个氢原子衍生的芳族烃基，可以为单环芳基、或稠环芳基、或多环芳基，对于多环的环种，至少一个是芳族环系。例如，“C6～C20芳基”是指包含6～20个碳原子的芳基，每次出现时，可以互相独立地为C6芳基、C10芳基、C14芳基、C18芳基或C20芳基。合适的实例包括但不限于：苯、联苯、萘、蒽、菲、二萘嵌苯、三亚苯及其衍生物。
需要说明的是，“取代或未取代”表示所定义的基团可以被取代，也可以不被取代。当所定义的基团被取代时，应理解为任选被本领域可接受的基团所取代，包括但不限于：烷基、烷氧基、烯基、炔基、芳基、杂芳基、杂烷基、杂环基、氨基、卤素。
在一些实施例中，R1、R2、R3、R4、R5包括碳原子数为1-10的烷基、碳原子数为1-10的环烷基、苯基以及取代的苯基中的任意一种；取代的苯基中具有的取代基包括卤素、烷基、环烷基、烷氧基、烷硫基、烷硅基和烷氧硅基中的一种或多种。
需要说明的是，R1、R2、R3、R4、R5分别包括碳原子数为1-10的烷基、碳原子数为1-10的环烷基、苯基以及取代的苯基中的任意一种。
在一些可选的实施方式中，取代的苯基中具有的取代基包括卤素、碳原子数为1-10的烷基、碳原子数为1-10的环烷基、碳原子数为1-10的烷氧基、碳原子数为1-10的烷硫基、碳原子数为1-10的烷硅基和碳原子数为1-10的烷氧硅基中的一种或多种。
烷氧基是指具有-O-烷基的基团，即烷基经由氧原子连接至母核结构。包含该术语的短语，例如，“C1～C9烷氧基”是指烷基部分包含1～9个碳原子，每次出现时，可以互相独立地为C1烷氧基、C4烷氧基、C5烷氧基、C6烷氧基、C7烷氧基、C8烷氧基或C9烷氧基。合适的实例包括但不限于：甲氧基(-O-CH3或-OMe)、乙氧基(-O-CH2CH3或-OEt)和叔丁氧基(-O-C(CH3)3 或-OtBu)。
烷硫基是指在烷基的基础上至少一个碳原子被硫元素所替代，烷基经由硫原子连接至母核结构。
烷硅基是指在烷基的基础上至少一个碳原子被硅元素所替代，烷基经由硅原子连接至母核结构。
烷氧硅基是指在烷基的基础上至少一个碳原子被硅元素所替代，烷氧基经由硅原子连接至母核结构。
在一些实施方式中，R1、R2包括碳原子数为1-10的环烷基和苯基中的任意一种。
需要说明的是，R1、R2分别包括碳原子数为1-10的环烷基和苯基中的任意一种。
在一些可选的实施方式中，R1、R2相同地包括碳原子数为1-10的环烷基和苯基中的任意一种。
在一些实施方式中，R3、R4、R5包括碳原子数为1-10的烷基中的任意一种。
需要说明的是，R3、R4、R5分别包括碳原子数为1-10的烷基中的任意一种。
在一些可选的实施方式中，R3、R4、R5相同地包括碳原子数为1-10的烷基中的任意一种。
作为一种可能的实施方式，L包括碳原子数为1-10的亚烷基、碳原子数为1-10的亚环烷基、亚苯基以及取代的亚苯基中的任意一种；所述取代的亚苯基中具有的取代基包括卤素、烷基、环烷基、烷氧基、烷硫基、烷硅基和烷氧硅基中的一种或多种。
在一些可选的实施方式中，取代的亚苯基中具有的取代基包括卤素、碳原子数为1-10的烷基、碳原子数为1-10的环烷基、碳原子数为1-10的烷氧基、碳原子数为1-10的烷硫基、碳原子数为1-10的烷硅基以及碳原子数为1-10的烷氧硅基中的一种或多种。
在一些实施方式中，L包括碳原子数为1-10的亚烷基中的任意一种。
在一些实施方式中，X包括碘离子和四氟化硼离子中的任意一种。
在一些实施例中，含磷钝化剂包括以下M1-M14结构式中的任意一种：

本申请的第二方面提供了一种钙钛矿太阳能电池，其包括本申请第一方面的含磷钝化剂。通过制备过程中加入含磷钝化剂，制备得到含有含磷钝化剂的钙钛矿太阳能电池，含磷钝化剂可协调钝化低配位铅离子缺陷、界面缺陷和碘离子空位缺陷，减少电荷在钙钛矿吸光层体现和/或界面处的能量损失，提高钙钛矿太阳能电池的光电性能和稳定性。
在一些实施方式中，钙钛矿太阳能电池包括钙钛矿吸光层，所述钙钛矿吸光层包含所述含磷钝化剂；在制备钙钛矿吸光层时直接加入含磷钝化剂，钝化钙钛矿吸光层的低配位铅离子缺陷、界面缺陷和碘离子空位缺陷。
在一些可选的实施方式中，含磷钝化剂在钙钛矿吸光层中的质量占比为0.01％-1％；作为示例，含磷钝化剂在钙钛矿吸光层中的质量占比可以为但不限于0.01％、0.05％、0.1％、0.15％、0.2％、0.25％、0.3％、0.35％、0.4％、0.45％、0.5％、0.55％、0.6％、0.65％、0.7％、0.75％、0.8％、0.85％、0.9％、0.95％、1％以及上述任意两个数值之间的范围。含磷钝化剂在钙钛矿 吸光层中的质量占比在上述范围内时，可有效钝化钙钛矿吸光层的低配位铅离子缺陷、界面缺陷和碘离子空位缺陷。可选地，含磷钝化剂在钙钛矿吸光层中的质量占比为0.05％-0.5％。
作为示例，上述提及的含磷钝化剂在钙钛矿吸光层中的质量占比可采用下述方法进行测定：获取钙钛矿吸光层粉末，通过元素分析方法测定吸光层中磷元素的含量。
在一些实施例中，钙钛矿太阳能电池包括层叠设置的钙钛矿吸光层和钝化层，钝化层位于钙钛矿吸光层的入光侧或出光侧，钝化层包含含磷钝化剂。在钙钛矿吸光层的上表面或下表面形成钝化层，可钝化钙钛矿吸光层的低配位铅离子缺陷、界面缺陷和碘离子空位缺陷。
需要说明的是，入光侧是指太阳光穿入钙钛矿吸光层的一侧；出光侧是指太阳光穿出钙钛矿吸光层的一侧。
在一些可选的实施例中，钝化层的厚度为0.1纳米-10纳米(nm)；作为示例，钝化层的厚度可以为但不限于0.1nm、0.5nm、1nm、2nm、3nm、4nm、5nm、6nm、7nm、8nm、9nm、10nm或者上述任意两个数值之间的范围。钝化层的厚度在上述范围内时，可有效钝化钙钛矿吸光层的低配位铅离子缺陷、界面缺陷和碘离子空位缺陷。可选地，钝化层的厚度为1nm-10nm。
作为示例，上述提及的钝化层的厚度可采用椭偏仪、原子力显微镜等仪器进行测定。
在一些实施方式中，钙钛矿吸光层包括分子式为ABX3或A2CDX6的活性材料。
可选地，A包括有机阳离子和无机阳离子中的一种或多种；进一步可选地，A包括一价脒基阳离子、一价胺基阳离子和Cs+中的一种或多种。
可选地，B包括有机阳离子和无机阳离子中的一种或多种；进一步可选地，B包括Pb2+和Sn2+中的一种或多种。
可选地，C包括有机阳离子和无机阳离子中的一种或多种；进一步可选地，C包括Ag+。
可选地，D包括有机阳离子和无机阳离子中的一种或多种；进一步可选地，D包括Bi3+、Sb3+、和In3+中的一种或多种。
可选地，X包括有机阴离子和无机阴离子中的一种或多种；进一步可选地，X包括Br-和I-中的一种或多种。
在一些实施方式中，钙钛矿吸光层的厚度为100nm-1000nm；作为示例，钙钛矿吸光层的厚度可以为但不限于100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1000nm或者上述任意两个数值之间的范围。钙钛矿吸光层的厚度在上述范围内时，可有效吸收太阳光，实现最佳的光电转换效率和稳定性。
作为示例，上述提及的钙钛矿吸光层的厚度可采用椭偏仪、原子力显微镜等仪器进行测定。
在一些实施方式中，钙钛矿吸光层的带隙宽度包括1.2电子伏特-2.3电子伏特(eV)。作为示例，钙钛矿吸光层的带隙宽度可以为但不限于1.2eV、1.3eV、1.4eV、1.5eV、1.6eV、1.7eV、1.8eV、1.9eV、2eV、2.1eV、2.2eV、2.3eV或者上述任意两个数值之间的范围。钙钛矿吸光层的带隙宽度在上述范围内时，可具有较高的可见光吸收效率。
作为示例，上述提及的钙钛矿吸光层的带隙宽度可采用下述方法测定：用紫外-可见分光光度计测定钙钛矿吸光层的吸收图谱，用光致发光荧光光谱仪测定钙钛矿吸光层的发射图谱，通过吸收图谱和发射图谱的交点可计算出钙钛矿吸光层的带隙宽度。
在一些实施方式中，钙钛矿太阳能电池还包括透明导电基底、电子传输层、空穴传输层和电极层；透明导电基底、电子传输层、钙钛矿吸光层、空穴传输层和电极层依次层叠设置，形成正式器件结构，钙钛矿吸光层包含含磷钝化剂。
在一些实施方式中，钙钛矿太阳能电池还包括透明导电基底、电子传输层、空穴传输层和电极层；透明导电基底、空穴传输层、钙钛矿吸光层、电子传输层和电极层依次层叠设置，形成反式器件结构，钙钛矿吸光层包含含磷钝化剂。
如图1所示为一种钙钛矿太阳能电池的结构示意图，其中11表示透明导电基底，12表示电子传输层或者空穴传输层，13表示钙钛矿吸光层，14表示空穴传输层或者电子传输层， 15表示电极层。当12表示电子传输层、14表示空穴传输层时，透明导电基底、电子传输层、钙钛矿吸光层、空穴传输层和电极层依次层叠设置形成正式器件结构，钙钛矿吸光层含有含磷钝化剂。当12表示空穴传输层、14表示电子传输层时，透明导电基底、空穴传输层、钙钛矿吸光层、电子传输层和电极层依次层叠设置形成反式器件结构，钙钛矿吸光层含有含磷钝化剂。
在一些实施方式中，钙钛矿太阳能电池还包括透明导电基底、电子传输层、空穴传输层和电极层；透明导电基底、电子传输层、钝化层、钙钛矿吸光层、空穴传输层和电极层依次层叠设置，形成正式器件结构，钝化层含有含磷钝化剂。
在一些实施方式中，钙钛矿太阳能电池还包括透明导电基底、电子传输层、空穴传输层和电极层；透明导电基底、电子传输层、钙钛矿吸光层、钝化层、空穴传输层和电极层依次层叠设置，形成正式器件结构，钝化层含有含磷钝化剂。
如图2所示为一种钙钛矿太阳能电池的结构示意图，其中21表示透明导电基底，22表示电子传输层，23表示钝化层或钙钛矿吸光层，24表示钙钛矿吸光层或钝化层，25表示空穴传输层，26表示电极层。23表示钝化层、24表示钙钛矿吸光层时，透明导电基底、电子传输层、钝化层、钙钛矿吸光层、空穴传输层和电极层依次层叠设置形成正式器件结构，钝化层含有含磷钝化剂。23表示钙钛矿吸光层、24表示钝化层时，透明导电基底、电子传输层、钙钛矿吸光层、钝化层、空穴传输层和电极层依次层叠设置形成正式器件结构，钝化层含有含磷钝化剂。
在一些实施方式中，钙钛矿太阳能电池还包括位于钙钛矿吸光层的出光侧的电子传输层、阻挡层和电极层，电子传输层、阻挡层和电极层依次层叠设置，其中电子传输层更临近钙钛矿吸光层。阻挡层可有效阻挡空穴的传输，减少由于电荷复合而引起的能量损失。
在一些可选的实施方式中，阻挡层的材料包括2,9-二甲基-4,7-联苯-1,10-邻二氮杂菲(BCP)、SnO2、ZnO以及含铈氧化物中的一种或多种。采用上述材料制备阻挡层，可使得阻挡层具有较低的价带顶，进一步提高阻挡层对于空穴的传输作用。
在一些可选的实施方式中，阻挡层的厚度为0.5nm-20nm。作为示例，阻挡层的厚度可以为但不限于0.50nm、1nm、2nm、3nm、4nm、5nm、6nm、7nm、8nm、9nm、10nm、11nm、12nm、13nm、14nm、15nm、16nm、17nm、18nm、19nm、20nm或者上述任意两个数值之间的范围。阻挡层的厚度在上述范围内时，即可以有效阻隔空穴，又不至于过厚影响电子传输。
作为示例，上述提及的阻挡层的厚度可采用椭偏仪、原子力显微镜等仪器进行测定。
在一些实施方式中，钙钛矿太阳能电池包括依次层叠设置的透明导电基底、空穴传输层、钝化层、钙钛矿吸光层、电子传输层、阻挡层和电极层；钝化层含有含磷钝化剂。
在一些实施方式中，钙钛矿太阳能电池包括依次层叠设置的透明导电基底、空穴传输层、钙钛矿吸光层、钝化层、电子传输层、阻挡层和电极层；钝化层含有含磷钝化剂。
如图3所示为一种钙钛矿太阳能电池的结构示意图，其中31表示透明导电基底，32表示空穴传输层，33表示钝化层或钙钛矿吸光层，34表示钙钛矿吸光层或钝化层，55表示电子传输层，36表示阻挡层，37表示电极层。33表示钝化层、34表示钙钛矿吸光层时，透明导电基底、空穴传输层、钝化层、钙钛矿吸光层、电子传输层、阻挡层和电极层依次层叠设置形成反式器件结构，钝化层含有含磷钝化剂。33表示钙钛矿吸光层、34表示钝化层时，透明导电基底、空穴传输层、钙钛矿吸光层、钝化层、电子传输层、阻挡层和电极层依次层叠设置形成反式器件结构，钝化层含有含磷钝化剂。
透明导电基底用于光入射。在一些实施方式中，透明导电基底包括：基底和导电材料层；导电材料层位于基底临近钙钛矿吸光层的一侧。
在其中的一些实施例中，导电材料层中的导电材料包括掺氟二氧化锡(FTO)、铟锡氧化物(ITO)、掺铝氧化锌(AZO)、掺硼氧化锌(BZO)、掺铟氧化锌(IZO)中的一种或多种。
在其中的一些实施例中，透明导电基底的厚度为10nm-1000nm；透明导电基底的厚度在 上述范围内时，在保证光透过的同时，可增加其导电能力。作为示例，透明导电基底的厚度可以包括但不限于：10nm、50nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1000nm或者上述任意两个数值组成的范围。
本申请中基底可以为但不限于玻璃基底或柔性基底；柔性基底的材料可举例如(但不限于)有机聚合物材料，进一步地，可由如下材料中的一种或多种按不同比例混合：包括但不限于聚乙烯醇(PVA)、聚酯(PET)、聚酰亚胺(PI)、聚萘二甲酯乙二醇酯(PEN)、聚二甲基硅氧烷(PDMS)等。
电子传输层，能够抽取并传输电子载流子，并可阻挡自由空穴通过。在一些实施方式中，电子传输层采用的材料包括TiO2、ZnO、SnO2、[6,6]-苯基C61丁酸甲酯(PC61BM)、[6,6]-苯基C71丁酸甲酯(PC71BM)、富勒烯C60(C60)、富勒烯C70(C70)、萘二酰亚胺(NDI)类材料、苝二酰亚胺(PDI)类材料，以及上述物质的衍生物、掺杂物、钝化物和掺杂钝化物中的一种或多种。
在一些实施方式中，电子传输层的厚度为5nm-100nm。作为示例，电子传输层的厚度可以包括但不限于：5nm、10nm、20nm、30nm、40nm、50nm、60nm、70nm、80nm、90nm、100nm或者上述任意两个数值组成的范围。电子传输层的厚度在上述范围内时，可使电子传输效果达到最优。
空穴传输层，能够抽取并传输空穴载流子，并可阻挡自由电子通过。在一些实施例中，空穴传输层采用的材料包括金属氧化物、聚合物、小分子，以及上述物质的衍生物、掺杂物、钝化物和掺杂钝化物中的一种或多种。可选地，金属氧化物包括氧化镍、氧化钼和氧化钨中的一种或多种。可选地，聚合物包括聚(3,4-乙烯二氧噻吩):聚(苯乙烯磺)(PEDOT:PSS)、聚[双(4-苯基)(2,4,6-三甲基苯基)胺](PTAA)、聚[双(4-苯基)(4-丁基苯基)胺](Poly-TPD)中的一种或多种。可选地，小分子包括4-(3,6-二甲基咔唑-9-基)丁基膦酸(Me-4PACZ)、2-(3,6-二甲氧基咔唑-9-基)乙基膦酸(MeO-2PACZ)、4-(咔唑-9-基)丁基膦酸(4PACZ)中的一种或多种。
在一些实施例中，空穴传输层的厚度为0.1nm-100nm。作为示例，空穴传输层的厚度可以包括但不限于：0.1nm、1nm、10nm、20nm、30nm、40nm、50nm、60nm、70nm、80nm、90nm、100nm或者上述任意两个数值组成的范围。空穴传输层的厚度在上述范围内时，可使空穴传输效果达到最优。
在一些实施例中，电极层的材料包括有机导电材料和无机导电材料中的一种或多种；可选地，电极层采用的材料包括银、铜、碳、金、铝、铟锡氧化物、掺铝氧化锌、掺硼氧化锌和掺铟氧化锌中的一种或多种。
在一些可能的实施方式中，电极层的厚度为10nm-1000nm；电极层的厚度在上述范围内时，可使电荷收集效果达到最优。作为示例，电极层的厚度可以包括但不限于：10nm、50nm、100nm、200nm、300nm、400nm、500nm、600nm、700nm、800nm、900nm、1000nm或者上述任意两个数值组成的范围。
钙钛矿电池工作时，钙钛矿吸光层受到光照后，内部电子获得能量并挣脱钙钛矿吸光层的束缚而形成带负电的电子载流子，同时形成带正电的空穴载流子，从而得到电子空穴对，自由电子和自由空穴通过相应传输层以朝着相反的方向传递，使得电子和空穴流动起来，构成外部电流，实现了光能向电能的转换。进一步地，钙钛矿吸光层吸收光子后，受激产生电子空穴对，电子空穴对进一步解离形成带相反电荷的自由载流子，其中的自由电子通过电子传输层向正极传输，自由空穴通过空穴传输层向负极传输，两种自由载流子分别被相应的电极收集，进一步在钙钛矿电池的电路中形成光电流。
可理解地，透明导电基底和电极层一个作为正极，可收集经由电子传输层传输的电子载流子，另一个作为负极，可收集经由空穴传输层传输的空穴载流子。
在一些实施方式中，钙钛矿太阳能电池的制备方法包括如下步骤：在透明导电基底的具有导电材料层的一侧制备电子传输层；在电子传输层远离透明导电基底的一侧制备钙钛矿吸光层，钙钛矿吸光层含有含磷钝化剂；在钙钛矿吸光层远离电子传输层的一侧制备空穴传输 层；在空穴传输层远离钙钛矿吸光层的一侧制备电极层。采用该方法制得正式器件结构。
在一些实施方式中，钙钛矿太阳能电池的制备方法包括如下步骤：在透明导电基底的具有导电材料层的一侧制备空穴传输层；在空穴传输层远离透明导电基底的一侧制备钙钛矿吸光层，钙钛矿吸光层含有含磷钝化剂；在钙钛矿吸光层远离空穴传输层的一侧制备电子传输层；在电子传输层远离钙钛矿吸光层的一侧制备电极层。采用该方法制得反式器件结构。
在一些实施方式中，钙钛矿太阳能电池的制备方法包括如下步骤：在透明导电基底的具有导电材料层的一侧制备电子传输层；在电子传输层远离透明导电基底的一侧制备钝化层，钝化层含有含磷钝化剂；在钝化层远离电子传输层的一侧制备钙钛矿吸光层；在钙钛矿吸光层远离钝化层的一侧制备空穴传输层；在空穴传输层远离钙钛矿吸光层的一侧制备电极层。采用该方法制得正式器件结构。
在一些实施方式中，钙钛矿太阳能电池的制备方法包括如下步骤：在透明导电基底的具有导电材料层的一侧制备电子传输层；在电子传输层远离透明导电基底的一侧制备钙钛矿吸光层，在钙钛矿吸光层远离电子传输层的一侧制备钝化层，钝化层含有含磷钝化剂；在钝化层远离钙钛矿吸光层的一侧制备空穴传输层；在空穴传输层远离钝化层的一侧制备电极层。采用该方法制得正式器件结构。
在一些实施方式中，钙钛矿太阳能电池的制备方法包括如下步骤：在透明导电基底的具有导电材料层的一侧制备空穴传输层；在空穴传输层远离透明导电基底的一侧制备钝化层，钝化层含有含磷钝化剂；在钝化层远离空穴传输层的一侧制备钙钛矿吸光层；在钙钛矿吸光层远离钝化层的一侧制备电子传输层；在电子传输层远离钙钛矿吸光层的一侧制备阻挡层；在阻挡层远离电子传输层的一侧制备电极层。采用该方法制得反式器件结构。
在一些实施方式中，钙钛矿太阳能电池的制备方法包括如下步骤：在透明导电基底的具有导电材料层的一侧制备空穴传输层；在空穴传输层远离透明导电基底的一侧制备钙钛矿吸光层；在钙钛矿吸光层远离空穴传输层的一侧制备钝化层，钝化层含有含磷钝化剂；在钝化层远离钙钛矿吸光层的一侧制备电子传输层；在电子传输层远离钙钛矿吸光层的一侧制备阻挡层；在阻挡层远离电子传输层的一侧制备电极层。采用该方法制得反式器件结构。
在其中的一些实施方式中，可采用旋涂、喷涂、刮涂、狭缝涂布和卷对卷印刷中的一种制备钝化层。
在其中的一些实施方式中，制备钝化层时包括制备钝化层浆液的步骤，制备钝化层浆液时采用的溶剂包括水、甲醇、乙醇、异丙醇、N,N-二甲基甲酰胺、二甲亚砜、氯仿、氯苯和甲苯中的一种或多种，含磷钝化剂在钝化层浆液中的浓度为0.001mg/mL-10mg/mL；例如，含磷钝化剂在钝化层浆液中的浓度可以为但不限于0.001mg/mL、0.01mg/mL、0.1mg/mL、1mg/mL、2mg/mL、3mg/mL、4mg/mL、5mg/mL、6mg/mL、7mg/mL、8mg/mL、9mg/mL、10mg/mL或者上述任意两个数值之间的范围。
可理解地，本申请涉及的所述钙钛矿电池的结构可以不限于前述列举的结构层。还可以根据需求引入其他的功能层，如缓冲层。在一些实施例中，所述钙钛矿电池可以设置能级合适的缓冲层，可发挥降低能级势垒、促进能级匹配、提高载流子抽取效率、同时还起到钝化界面缺陷态、保护光吸收层、抑制水分子、氧气对电池氧化分解、提高光电转换效率、改善钙钛矿电池稳定性等作用中的一种或多种。根据缓冲层所处位置的不同，缓冲层的类型可包括空穴传输层与阳极之间的缓冲层、电子传输层与阴极之间的缓冲层、空穴传输层与吸收层之间的缓冲层、电子传输层与吸收层之间的缓冲层四种。能够用于钙钛矿电池中缓冲层的材料可以包括但不限于：Cu2O、NiO、AZO、TiO2等。
本申请的第三方面提供了一种光伏组件，包括本申请第二方面的钙钛矿太阳能电池。
上述钙钛矿太阳能电池的光电转换效率高且稳定性好，可提高光伏组件的光电效率和稳定性。
上述包括一个或多个钙钛矿太阳能电池，可根据具体的应用场景选择；进一步地，上述光伏组件中包括多个钙钛矿太阳能电池，多个钙钛矿太阳能电池串联或并联连接形成电池片。
在其中一些实施例中，上述光伏组件还包括光伏玻璃层、粘结层和背板。
电池片的两个表面分别设有粘结层，在其中一个粘结层中远离电池片的表面设有背板，在另一个粘结层中远离电池片的表面设有光伏玻璃层。
光伏玻璃层和背板用于保护保护钙钛矿太阳能电池，其具有密封、绝缘、防水的作用；粘结层起到粘结光伏玻璃层与电池片、粘结背板与电池片的作用。
可选地，光伏玻璃层的材质为钢化玻璃，背板的材质采用TPT(聚氟乙烯)或TPE(热塑性弹性体)材质，粘结层的材质采用EVA(聚乙烯-聚醋酸乙烯酯共聚物)。
进一步地，上述光伏组件还包括接线盒及外框。
接线盒用于保护整个光伏组件的发电系统，它相当于一个电流中转站，当有电池片出现短路，接线盒会自动断开短路的电池串。
外框可以起到支撑和保护整个光伏组件的作用，边框可采用铝合金材质，其强度、耐腐蚀性优异。
进一步地，通过硅胶来粘结、密封边框与光伏组件中其他部位的连接处。光伏组件可以将太阳能转化为电能，或送往蓄电池中存储起来，或推动负载工作。
在其中一些实施例中，上述光伏组件为太阳能电池板。
本申请的第四方面提供了一种光伏系统，包括本申请第三方面的光伏组件。
光伏系统利用上述光伏组件中的钙钛矿太阳能电池，将太阳辐射能直接转换成电能，效率高、稳定性好；进一步地，上述光伏系统为光伏发电系统。
光伏组件是光伏发电系统中的核心部分，上述光伏系统中，包括一个或多个光伏组件，可根据具体的应用场景选择；进一步地，上述光伏系统中包括多个光伏组件时，多个光伏组件形成光伏阵列。
上述光伏系统可以是独立光伏发电系统，也可以是并网光伏发电系统。
独立光伏发电系统包括光伏阵列、蓄电池组、充电控制器、电力电子变换器(逆变器)、负载等。其工作原理是，太阳辐射能量经过光伏阵列首先被转换成电能，然后由电力电子变换器变换后给负载供电，同时将多余的电能经过充电控制器后以化学能的形式储存在储能装置中，这样在日照不足时，储存在电池中的能量就可经过电力电子逆变器、滤波和工频变压器升压后变成交流220V、50Hz的电能供交流负载使用。
并网光伏发电系统包括光伏阵列、高频DC/DC升压电路、电力电子变换器(逆变器)和系统监控。其工作原理是，太阳辐射能量经过光伏阵列转换后，再经高频直流变换后变成高压直流电，然后经过电力电子逆变器逆变后向电网输出与电网电压相频一致的正弦交流电流。
上述两种光伏发电系统各有特点，可根据具体的应用场景选择。
本申请第五方面提供了一种用电装置，包括本申请第二方面的钙钛矿太阳能电池。
在其中一些实施例中，上述钙钛矿太阳能电池可以用作用电装置的发电装置。发电装置的类型可以包括但不限于集成式发电。发电装置的位置可以包括但不限于汽车的车顶、背板等位置。
进一步地，上述用电装置可以包括移动设备，例如手机、笔记本电脑等、电动车辆、电气列车、船舶及卫星、发电系统等，但不限于此。
图4是作为一个示例的用电装置。该用电装置为汽车，进一步可以为纯电动车、混合动力电动车、或插电式混合动力电动车等。
作为另一个示例的用电装置可以是手机、平板电脑、笔记本电脑、计算器等。
作为另一个示例的用电装置可以是可穿戴式设备，如手表等。
以下结合实施例进一步说明本申请的有益效果。
为了使本申请所解决的技术问题、技术方案及有益效果更加清楚，以下将结合实施例和附图进行进一步详细说明。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本申请及其应用的任何限制。基于本申请中的实施例，本领域普通技术人员在没有付出创造性劳动 前提下所获得的所有其他实施例都属于本申请保护的范围。本申请的实施例和对比例中所用的材料均可以通过商购获得。
实施例中未注明具体技术或条件的，按照本领域内的文献所描述的技术或条件或者按照产品说明书进行。所用试剂或仪器未注明生产厂商者，均为可以通过市购获得的常规产品。
一、含磷钝化剂的制备
1、含磷钝化剂M1的制备
过程1：将1.86g化合物1和10mL四氢呋喃加入三口瓶1中，待化合物1溶解后，温度降至-78℃，滴加4mL浓度为2.5M的正丁基锂(n-BuLi)的正己烷溶液至三口瓶1中，搅拌2h备用。在三口瓶2中加入2.81g化合物2和10mL四氢呋喃，待化合物2溶解后，将三口瓶1中的溶液滴加至三口瓶2中，搅拌12h。反应结束后经层析色谱硅胶柱处理得2.79g的化合物3，产率为80％，测得其1H NMR(400MHz,CD2Cl2)δ7.42(d,J＝7.2Hz,6H),7.15(d,J＝7.2Hz,4H),3.03-2.98(m,2H),2.01-1.96(m,2H)。反应过程如下：
过程2：将340mg化合物3、76mg三甲基膦(P(CH3)3)、10mL邻二氯苯(o-DCB)加入三口瓶3中，160℃加热12h，反应结束后析出的沉淀溶解在10mL水中，用10mL×3二氯甲烷洗涤水相三次，最后用减压蒸馏的方式除去水，获得408mg的含磷钝化剂M1，产率为98％，测得其1H NMR(400MHz,D2O)δ7.42(d,J＝7.2Hz,6H),7.15(d,J＝7.2Hz,4H),2.54-2.50(m,2H),1.50-1.46(m,2H),0.89(s,9H)。反应过程如下：
2、含磷钝化剂M2的制备
含磷钝化剂M2的制备和含磷钝化剂M1的区别在于：由过程2中将76mg三甲基膦(P(CH3)3)替换为202mg三丁基膦(PBu3)，经反应和后处理步骤最终获得526mg的含磷钝化剂M2，产率为97％，测得其1H NMR(400MHz,D2O)δ7.42(d,J＝7.2Hz,6H),7.15(d,J＝7.2Hz,4H),2.54-2.48(m,8H),1.50-1.38(m,14H),0.90(s,9H)。反应过程如下：
3、含磷钝化剂M3的制备
含磷钝化剂M3的制备和含磷钝化剂M1的区别在于：
(1)过程1中将2.81g的化合物2替换为2.96g化合物4，反应后得2.83g的化合物5，产率为80％，测得其1H NMR(400MHz,CD2Cl2)δ7.42(d,J＝7.2Hz,6H),7.15(d,J＝7.2Hz,4H),2.94-2.88(m,2H),1.91-1.86(m,2H),1.45-1.39(m,2H)。反应过程如下：
(2)过程2中将340mg化合物3替换为354mg的化合物5、76mg三甲基膦(P(CH3)3)替换为202mg的三丁基膦，经反应和后处理步骤最终获得536mg的含磷钝化剂M3，产率为99％，测得其1H NMR(400MHz,D2O)δ7.42(d,J＝7.2Hz,6H),7.15(d,J＝7.2Hz,4H),2.54-2.50(m,8H),1.50-1.36(m,16H),0.89(s,9H)。反应过程如下：
4、含磷钝化剂M4的制备
含磷钝化剂M4的制备和含磷钝化剂M1的区别在于：
(1)过程1中将2.81g的化合物2替换为2.67g化合物6，则反应后得2.36g的化合物7，产率为72％，测得其1H NMR(400MHz,CD2Cl2)δ7.42(d,J＝7.2Hz,6H),7.15(d,J＝7.2Hz,4H),2.96(d,J＝7.2Hz,2H)。反应过程如下：
(2)过程2中将340mg化合物3替换为326mg的化合物7、76mg三甲基膦(P(CH3)3)替换为202mg的三丁基膦，经反应和后处理步骤最终获得524mg的含磷钝化剂M4，产率为99％，测得其1H NMR(400MHz,D2O)δ7.42(d,J＝7.2Hz,6H),7.15(d,J＝7.2Hz,4H),2.55-2.51(m,8H),1.51-1.34(m,12H),0.91(s,9H)。反应过程如下：
5、含磷钝化剂M5的制备
含磷钝化剂M5的制备和含磷钝化剂M1的区别在于：
(1)过程1中将1.86g的化合物1替换为1.98g化合物8，则反应后得2.82g的化合物9，产率为79％，测得其1H NMR(400MHz,CD2Cl2)δ3.03-2.98(m,2H),2.07-1.95(m,2H),1.62-1.29(m,22H)。反应过程如下：
(2)过程2中将340mg化合物3替换为352mg的化合物9，经反应和后处理步骤最终获得423mg的含磷钝化剂M5，产率为99％，测得其1H NMR(400MHz,D2O)δ2.58-2.48(m,2H),1.62-1.29(m,24H),0.90(s,9H)。反应过程如下：
6、含磷钝化剂M6的制备
含磷钝化剂M6的制备和含磷钝化剂M5的区别在于：
过程2中将76mg三甲基膦替换为202mg的三丁基膦，经反应和后处理步骤最终获得423mg的含磷钝化剂M6，产率为99％，测得其1H NMR(400MHz,D2O)δ2.58-2.48(m,8H),1.62-1.29(m,30H),0.89(s,9H)。反应过程如下：
7、含磷钝化剂M7的制备
含磷钝化剂M7的制备和含磷钝化剂M5的区别在于：
(1)过程1中将2.81g的化合物2替换为2.96g化合物4，则反应后得2.82g的化合物10，产率为79％，测得其1H NMR(400MHz,CD2Cl2)δ3.03-2.98(m,2H),2.07-1.95(m,2H),1.62-1.29(m,26H)。反应过程如下：
(2)过程2中将352mg化合物9替换为366mg的化合物10，经反应和后处理步骤最终获得551mg的含磷钝化剂M7，产率为99％，测得其1H NMR(400MHz,D2O)δ2.58-2.48(m,2H),1.64-1.27(m,32H),0.90(s,9H)。反应过程如下：
8、含磷钝化剂M8的制备
含磷钝化剂M8的制备和含磷钝化剂M5的区别在于：
(1)过程1中将2.81g的化合物2替换为2.67g化合物6，则反应后得2.88g的化合物11，产率为78％，测得其1H NMR(400MHz,CD2Cl2)δ3.09-2.98(m,2H),1.62-1.29(m,22H)。反应过程如下：
(2)过程2中将352mg化合物9替换为352mg的化合物11，经反应和后处理步骤最终获得423mg的含磷钝化剂M8，产率为99％，测得其1H NMR(400MHz,D2O)δ2.58-2.48(m,6H),1.62-1.29(m,28H),0.90(s,9H)。反应过程如下：
9、含磷钝化剂M9的制备
含磷钝化剂M9的制备和含磷钝化剂M1的区别在于：
(1)过程1中将2.81g的化合物2替换为2.88g化合物12，则反应后得1.25g的化合物13，产率为37％，测得其1H NMR(400MHz,CD2Cl2)δ7.42(d,J＝7.2Hz,12H),7.15(d,J＝7.2Hz,8H),2.79(s,4H),1.30(d,J＝7.2Hz,4H)。反应过程如下：
(2)过程2中将340mg化合物3替换为346mg的化合物13、76mg三甲基膦(P(CH3)3)替换为202mg的三丁基膦，经反应和后处理步骤最终获得541mg的含磷钝化剂M9，产率为99％，测得其1H NMR(400MHz,D2O)δ7.42(d,J＝7.2Hz,12H),7.15(d,J＝7.2Hz,8H),2.55-2.51(m,16H),1.51-1.34(m,24H),0.91(s,18H)。反应过程如下：
10、含磷钝化剂M10的制备
含磷钝化剂M10的制备和含磷钝化剂M1的区别在于：
(1)过程1中将2.81g的化合物2替换为3.16g化合物14，则反应后得1.27g的化合物15，产率为34％，测得其1H NMR(400MHz,CD2Cl2)δ7.42(d,J＝7.2Hz,12H),7.15(d,J＝7.2Hz,8H),2.95-2.87(m,4H),1.47-1.38(m,4H),1.24-1.17(m,4H)。反应过程如下：
(2)过程2中将340mg化合物3替换为374mg的化合物15、76mg三甲基膦(P(CH3)3)替换为202mg的三丁基膦，经反应和后处理步骤最终获得446mg的含磷钝化剂M10，产率为99％，测得其1H NMR(400MHz,D2O)δ7.42(d,J＝7.2Hz,12H),7.15(d,J＝7.2Hz,8H),2.50-2.42(m,16H),1.41-1.14(m,40H),0.90(s,18H)。反应过程如下：
11、含磷钝化剂M11的制备
将100mg含磷钝化剂M10通过离子交换树脂获得98mg的含磷钝化剂M11，产率为98％，测得其1H NMR(400MHz,D2O)δ7.42(d,J＝7.2Hz,12H),7.15(d,J＝7.2Hz,8H),2.50-2.42(m,16H),1.41-1.14(m,40H),0.90(s,18H)。反应过程如下：
12、含磷钝化剂M12
含磷钝化剂M12的制备和含磷钝化剂M10的区别在于：
(1)过程1中将3.16g化合物14替换为6.31g，则反应后得1.27g的化合物16，产率为34％，测得其1H NMR(400MHz,CD2Cl2)δ7.42(d,J＝7.2Hz,6H),7.15(d,J＝7.2Hz,4H),2.95-2.87(m,6H),1.47-1.38(m,2H),1.24-1.17(m,8H)。反应过程如下：
(2)过程2中将374mg的化合物15替换为229mg的化合物16，经反应和后处理步骤最终获得415mg的含磷钝化剂M12，产率为99％，测得其1H NMR(400MHz,D2O)δ7.42(d,J＝7.2Hz,6H),7.15(d,J＝7.2Hz,4H),2.50-2.42(m,6H),1.41-1.14(m,64H),0.90(s,27H)。反应过程如下：
13、含磷钝化剂M13
含磷钝化剂M13的制备和含磷钝化剂M10的区别在于：
(1)过程1中将3.16g化合物14替换为2.11g，则反应后得1.51g的化合物17，产率为56％，测得其1H NMR(400MHz,CD2Cl2)δ7.42(d,J＝7.2Hz,18H),7.15(d,J＝7.2Hz,12H),2.95-2.87(m,2H),1.47-1.38(m,6H),1.24-1.17(m,8H)。反应过程如下：
(2)过程2将374mg的化合物15替换为806mg的化合物17，经反应和后处理步骤最终获得998mg的含磷钝化剂M13，产率为98％，测得其1H NMR(400MHz,D2O)δ7.42(d,J＝7.2Hz,18H),7.15(d,J＝7.2Hz,12H),2.50-2.42(m,14H),1.41-1.14(m,32H),0.90(s,9H)。反应过程如下：
14、含磷钝化剂M14
将100mg含磷钝化剂M13通过离子交换树脂获得98mg的含磷钝化剂M14，产率为98％，测得其1H NMR(400MHz,D2O)δ7.42(d,J＝7.2Hz,12H),7.15(d,J＝7.2Hz,8H),2.50-2.42(m,16H),1.41-1.14(m,40H),0.90(s,18H)。反应过程如下：
15、含磷钝化剂M15
含磷钝化剂M15的制备和含磷钝化剂M1的区别在于：
(1)过程1中将2.81g的化合物2替换为3.36g化合物18，则反应后得1.26g的化合物19，产率为32％，测得其1H NMR(400MHz,CD2Cl2)δ7.44-7.40(m,6H),7.17-7.13(m,4H),4.02-3.98(m,2H),2.11-2.07(m,4H),1.67-1.32(m,5H)。反应过程如下：
(2)过程2中将340mg化合物3替换为394mg的化合物19、76mg三甲基膦(P(CH3)3)替换为202mg的三丁基膦，经反应和后处理步骤最终获得587mg的含磷钝化剂M15，产率为98％，测得其1H NMR(400MHz,D2O)δ7.44-7.40(m,6H),7.17-7.13(m,4H),2.48-2.44(m,6H),1.63-1.56(m,4H),1.45-1.41(m,2H),1.32-1.26(m,16H),0.91-0.87(m,9H)。反应过程如下：
16、含磷钝化剂M16
含磷钝化剂M16的制备和含磷钝化剂M1的区别在于：
无需进行过程1的反应过程。过程2中将340mg化合物3替换为394mg的化合物20、76mg三甲基膦(P(CH3)3)替换为202mg的三丁基膦，经反应和后处理步骤最终获得601mg的含磷钝化剂M16，产率为99％，测得其1H NMR(400MHz,D2O)δ7.47-7.42(m,6H),7.19-7.13(m,8H),2.64(s,2H),1.42-1.36(m,18H),0.93-0.89(m,9H)。反应过程如下：
17、含磷钝化剂M17
含磷钝化剂M17的制备和含磷钝化剂M1的区别在于：
无需进行过程1的反应过程。过程2中将340mg化合物3替换为462mg的化合物21、76mg三甲基膦(P(CH3)3)替换为202mg的三丁基膦，经反应和后处理步骤最终获得632mg的含磷钝化剂M17，产率为95％，测得其1H NMR(400MHz,D2O)δ7.19-7.13(m,8H),7.00-6.96(m,4H),3.81(s,6H),2.64(s,2H),1.42-1.36(m,18H),0.93-0.89(m,9H)。反应过程如下：
18、含磷钝化剂M18
含磷钝化剂M18的制备和含磷钝化剂M1的区别在于：
(1)过程1中将2.81g的化合物2替换为3.33g化合物22，则反应后得1.57g的化合物23，产率为41％，测得其1H NMR(400MHz,CD2Cl2)δ7.44-7.40(m,6H),7.17-7.13(m,4H),3.96-3.92(m,4H),3.13-3.08(m,2H),1.63-1.60(m,2H)。反应过程如下：
(2)过程2中将340mg化合物3替换为384mg的化合物23、76mg三甲基膦(P(CH3)3)替换为202mg的三丁基膦，经反应和后处理步骤最终获得582mg的含磷钝化剂M18，产率为99％，测得其1H NMR(400MHz,D2O)δ7.44-7.40(m,6H),7.17-7.13(m,4H),3.43-3.39(m,4H),1.63-1.56(m,4H),1.45-1.36(m,18H),0.91-0.87(m,9H)。反应过程如下：
二、钙钛矿太阳能电池的制备
实施例1
(1)取20片规格为2.0*2.0cm的FTO导电玻璃，两端通过激光刻蚀各去掉0.35cm的FTO，裸露出玻璃基底，用水、丙酮、异丙醇依次超声清洗刻蚀后的FTO导电玻璃数次，FTO导电玻璃在氮气枪下吹干溶剂，放入紫外臭氧机中进一步清洗；其中，FTO导电玻璃表示采用掺氟二氧化锡作为导电材料在玻璃基底的一侧表面形成导电材料层后得到的玻璃；
(2)在紫外臭氧处理后的FTO基片上以4000rpm的速率旋涂10mg/mL的氧化镍纳米颗粒(水溶液为溶剂)，在100℃热台上退火处理30min，制备厚度为35nm的空穴传输层；
(3)称取摩尔比为97:3:95:5的碘化铅、碘甲脒、碘化铯和溴化铅，以及占前述四种物质的1wt％的含磷钝化剂M1，将固体粉末均溶解在体积比为100:1的DMF与DMSO的混合溶液中，搅拌3h，用0.22μm有机滤膜过滤，得到钙钛矿前驱体溶液，在空穴传输层上以3000rpm旋涂钙钛矿前驱液，100℃下退火30min，冷却至室温，获得厚度为500nm的钙钛矿吸光层；
(4)在钙钛矿吸光层上以1500rpm旋涂PC61BM的氯苯溶液，100℃下退火10min，制备厚度约为30nm的电子传输层；然后以5000rpm旋涂BCP的异丙醇溶液制备厚度为5nm的阻挡层；
(5)将获得到片子放入蒸镀机，蒸镀金属电极Cu，制备厚度约为100nm的电极层。
实施例2-18和21-24
实施例2-18和21-24中钙钛矿太阳能电池的制备方法和实施例1中钙钛矿太阳能电池的制备方法基本相似，区别主要在于：含磷钝化剂的种类和/或用量、阻挡层的材料种类、阻挡层的厚度、钙钛矿吸光层的材料种类、钙钛矿吸光层的厚度、透明导电基底的种类和、电子传输层的种类和/厚度、空穴传输层的种类和/或厚度、电极层的种类和/或厚度中的至少一项不同，具体详见表1。
可理解的是，制备钙钛矿吸光层时采用的原料种类和/或用量不同时，则制备得到的钙钛矿吸光层的材料种类不同，且由制备得到的钙钛矿吸光层的种类反推制备钙钛矿吸光层时加入的原料种类和用量，因此基于清楚简洁的目的，下述表1中仅列出各实施例和对比例中制备得到的钙钛矿吸光层的材料种类即可。
实施例19
实施例19中钙钛矿太阳能电池的制备方法和实施例1中钙钛矿太阳能电池的制备方法的区别主要在于：未将含磷钝化剂M1加在钙钛矿吸光层中，在制备完成钙钛矿吸光层后，将0.5mg/mL的溶解有含磷钝化剂M1的异丙醇溶液以3000rpm的转速旋涂在钙钛矿吸光层表面，制备得到厚度为5nm的钝化层。
实施例20
实施例20中钙钛矿太阳能电池的制备方法和实施例1中钙钛矿太阳能电池的制备方法的区别主要在于：未将含磷钝化剂M1加在钙钛矿吸光层中，在制备完成空穴传输层后，将0.5mg/mL的溶解有含磷钝化剂M1的异丙醇溶液以3000rpm的转速旋涂在空穴传输层表面，制备得到厚度为5nm的钝化层。
实施例25-26
实施例25-26中钙钛矿太阳能电池的制备方法和实施例19中钙钛矿太阳能电池的制备方法的区别在于：钝化层的厚度不同，具体详见表1。
对比例1
对比例1和实施例21的区别在于：未添加含磷钝化剂，其他均相同，具体详见表1。
对比例2
对比例2和实施例21的区别在于：采用具有下述结构的钝化剂X替代含磷钝化剂M1，其他均相同。具体详见表1。
对比例3
对比例3和实施例1的区别在于：采用具有下述结构的钝化剂Y替代含磷钝化剂M1，其他均相同。具体详见表1。
上述各实施例和对比例的参数测试如表1所示。
表1


注“/”代表不存在该结构或物质。
其中，n1表示含磷钝化剂在钙钛矿吸光层中的质量占比，BCP表示2,9-二甲基-4,7-联苯-1,10-邻二氮杂菲，PC61BM表示[6,6]-苯基C61丁酸甲酯；FTO表示掺氟二氧化锡，其中氟的掺杂量为5％的原子百分比；M1上钝化表示制备完成钙钛矿吸光层后，在钙钛矿吸光层的表面制备钝化层，M2下钝化表示制备完成空穴传输层后，在空穴传输层的表面制备钝化层。
需要说明的是，上述各实施例和对比例中空穴传输层、电子传输层、钙钛矿吸光层、钝化层、阻挡层以及电极层的厚度采用原子力显微镜测定得到。
三、钙钛矿太阳能电池性能测试
光电转换效率测试
采用光焱的太阳光模拟器，根据国家标准IEC61215进行测试，采用晶硅太阳能电池校正光的强度，使其达到同一太阳光强度，AM 1.5，将上述各实施例和对比例中钙钛矿太阳能电池分别与与数字源表连接，光照下测定第3天和第30天的光电转换效率，结果如表2所示。
表2
由表2中实施例1-26和对比例1-3的结果比对可知，在制备钙钛矿太阳能电池时加入本申请的含磷钝化剂，可提高钙钛矿太阳能电池的光电转换效率和稳定性。
实施例1和实施例21-24的区别在于含磷钝化剂在钙钛矿吸光层中的质量占比不同，由实施例1和实施例21-24的结果可知，当M1在钙钛矿层中添加含量为0.1％左右时，钙钛矿电池器件表现出的效率达到更优，稳定性更高。
实施例19和实施例25-26的区别在于钝化层的厚度不同，由实施例19和实施例25-26的结果可知，当M1在钙钛矿层上界面单独成层，厚度为5nm左右时，钙钛矿电池器件表现 出的效率达到更优，稳定性更高。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准，说明书及附图可以用于解释权利要求的内容。

Claims (20)

  1. 一种含磷钝化剂，所述含磷钝化剂包括离子化合物，所述离子化合物包括阳离子基团；所述阳离子基团具有如下式(I)所示的结构：
    A-L-B
    (I)
    其中，A表示带有孤对电子的有机磷基团，B表示带有正电荷的有机磷盐基团，L表示所述有机磷基团和所述有机磷盐基团之间的连接基团。
  2. 如权利要求1所述的含磷钝化剂，其中所述离子化合物还包括阴离子基团，所述阴离子基团包括卤素阴离子、类卤素阴离子、四氟硼酸根离子、六氟磷酸根离子和二甲磺酰胺根离子中的一种或多种。
  3. 如权利要求1至2任一项所述的含磷钝化剂，其中所述L包括取代或未取代的亚烷基、取代或未取代的亚环烷基以及取代或未取代的亚芳基中的一种或多种。
  4. 如权利要求1至3任一项所述的含磷钝化剂，其中所述含磷钝化剂具有如下式(II)所示的结构：
    其中，R1、R2、R3、R4、R5包括取代或未取代的烷基、取代或未取代的环烷基以及取代或未取代的芳基中的任意一种；
    L包括取代或未取代的亚烷基、取代或未取代的亚环烷基、取代或未取代的亚芳基中的任意一种；
    X包括卤素阴离子和含卤素的阴离子基团中的任意一种；
    1≤n1≤4，1≤n2≤10，1≤n3≤4，n1、n2、n3为整数。
  5. 如权利要求4所述的含磷钝化剂，其中所述R1、所述R2、所述R3、所述R4、所述R5包括碳原子数为1-10的烷基、碳原子数为1-10的环烷基、苯基以及取代的苯基中的任意一种；所述取代的苯基中具有的取代基包括卤素、烷基、环烷基、烷氧基、烷硫基、烷硅基和烷氧硅基中的一种或多种；
    可选地，所述取代的苯基中具有的取代基包括卤素、碳原子数为1-10的烷基、碳原子数为1-10的环烷基、碳原子数为1-10的烷氧基、碳原子数为1-10的烷硫基、碳原子数为1-10的烷硅基和碳原子数为1-10的烷氧硅基中的一种或多种。
  6. 如权利要求4至5任一项所述的含磷钝化剂，其中所述R1、所述R2包括碳原子数为1-10的环烷基和苯基中的任意一种；
    可选地，所述R1、所述R2相同地包括碳原子数为1-10的环烷基和苯基中的任意一种。
  7. 如权利要求4至6任一项所述的含磷钝化剂，其中所述R3、所述R4、所述R5包括碳原子数为1-10的烷基中的任意一种；
    可选地，所述R3、所述R4、所述R5相同地包括碳原子数为1-10的烷基中的任意一种。
  8. 如权利要求1至7任一项所述的含磷钝化剂，其中所述L包括碳原子数为1-10的亚烷基、碳原子数为1-10的亚环烷基、亚苯基以及取代的亚苯基中的任意一种；所述取代的亚苯基中具有的取代基包括卤素、烷基、环烷基、烷氧基、烷硫基、烷硅基和烷氧硅基中的一种或多种；
    可选地，所述取代的亚苯基中具有的取代基包括卤素、碳原子数为1-10的烷基、碳原子数为1-10的环烷基、碳原子数为1-10的烷氧基、碳原子数为1-10的烷硫基、碳原子数为1-10 的烷硅基以及碳原子数为1-10的烷氧硅基中的一种或多种。
  9. 如权利要求1至8任一项所述的含磷钝化剂，其中所述L包括碳原子数为1-10的亚烷基中的任意一种。
  10. 如权利要求4至9任一项所述的含磷钝化剂，其中所述X包括碘离子和四氟化硼离子中的任意一种。
  11. 如权利要求1至10任一项所述的含磷钝化剂，其中所述含磷钝化剂包括以下结构式中的任意一种：

  12. 一种钙钛矿太阳能电池，所述钙钛矿太阳能电池包含如权利要求1至11任一项所述的含磷钝化剂。
  13. 如权利要求12所述的钙钛矿太阳能电池，其中所述钙钛矿太阳能电池包括钙钛矿吸光层，所述钙钛矿吸光层包含所述含磷钝化剂；
    可选地，所述含磷钝化剂在所述钙钛矿吸光层中的质量占比为0.01％-1％；可选为0.05％-0.5％。
  14. 如权利要求12所述的钙钛矿太阳能电池，其中所述钙钛矿太阳能电池包括层叠设置的钙钛矿吸光层和钝化层，所述钝化层位于所述钙钛矿吸光层的入光侧或出光侧，所述钝化层包含所述含磷钝化剂；
    可选地，所述钝化层的厚度为0.1nm-10nm；可选为1nm-10nm。
  15. 如权利要求13至14任一项所述的钙钛矿太阳能电池，其中所述钙钛矿吸光层包括分子式为ABX3或A2CDX6的活性材料；
    可选地，所述分子式为ABX3或A2CDX6的活性材料具有下述特征中的至少一项：
    (1)A包括有机阳离子和无机阳离子中的一种或多种；可选地，所述A包括一价脒基阳离子、一价胺基阳离子和Cs+中的一种或多种；
    (2)B包括有机阳离子和无机阳离子中的一种或多种；可选地，所述B包括Pb2+和Sn2+中的一种或多种；
    (3)C包括有机阳离子和无机阳离子中的一种或多种；可选地，所述C包括Ag+；
    (4)D包括有机阳离子和无机阳离子中的一种或多种；可选地，所述D包括Bi3+、Sb3+、和In3+中的一种或多种；
    (5)X包括有机阴离子和无机阴离子中的一种或多种；可选地，所述X包括Br-和I-中的一种或多种。
  16. 如权利要求13至15任一项所述的钙钛矿太阳能电池，其中所述钙钛矿吸光层具有下述特征中的至少一项：
    (1)所述钙钛矿吸光层的厚度为100nm-1000nm；
    (2)所述钙钛矿吸光层的带隙宽度包括1.2eV-2.3eV。
  17. 如权利要求13至16任一项所述的钙钛矿太阳能电池，其中所述钙钛矿太阳能电池还包括位于所述钙钛矿吸光层的出光侧的电子传输层、阻挡层和电极层，所述电子传输层、所述阻挡层和所述电极层依次层叠设置，其中所述电子传输层更临近所述钙钛矿吸光层；
    可选地，所述阻挡层的材料包括2,9-二甲基-4,7-联苯-1,10-邻二氮杂菲、SnO2、ZnO以及含铈氧化物中的一种或多种；
    可选地，所述阻挡层的厚度为0.5nm-20nm。
  18. 一种光伏组件，包括如权利要求12至17任一项所述的钙钛矿太阳能电池。
  19. 一种光伏系统，包括权利要求18所述的光伏组件。
  20. 一种用电装置，包括如权利要求12至17任一项所述的钙钛矿太阳能电池。
PCT/CN2024/086861 2023-06-14 2024-04-09 含磷钝化剂、钙钛矿太阳能电池、光伏组件、光伏系统及用电装置 Ceased WO2024255409A1 (zh)

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