WO2024252740A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
WO2024252740A1
WO2024252740A1 PCT/JP2024/007845 JP2024007845W WO2024252740A1 WO 2024252740 A1 WO2024252740 A1 WO 2024252740A1 JP 2024007845 W JP2024007845 W JP 2024007845W WO 2024252740 A1 WO2024252740 A1 WO 2024252740A1
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WO
WIPO (PCT)
Prior art keywords
ring
substrate
electrode
plasma processing
conductive base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2024/007845
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English (en)
French (fr)
Japanese (ja)
Inventor
直樹 松本
真矢 石川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Priority to JP2025525951A priority Critical patent/JPWO2024252740A1/ja
Publication of WO2024252740A1 publication Critical patent/WO2024252740A1/ja
Priority to US19/403,529 priority patent/US20260088250A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • An exemplary embodiment of the present disclosure relates to a plasma processing apparatus.
  • Patent Document 1 a technology for adjusting the plasma density near the edge of a substrate and the plasma density in the region of the substrate inside the edge is described in Patent Document 1.
  • This disclosure provides a technique that can optimally adjust the potential of the edge ring.
  • the plasma processing apparatus includes a chamber, a substrate support disposed within the chamber, the substrate support including a conductive base, an electrostatic chuck disposed on the conductive base and having a substrate support surface and a ring support surface, a substrate electrode disposed within the electrostatic chuck below the substrate support surface and electrically connected to the conductive base via a first conductor, a ring electrode disposed within the electrostatic chuck below the ring support surface and electrically connected to the conductive base via a second conductor, and an edge ring disposed on the ring support surface to surround the substrate disposed on the substrate support surface, an RF generator electrically connected to the conductive base and configured to generate an RF signal, a voltage pulse generator electrically connected to the conductive base and configured to generate a pulsed voltage signal, and a potential control circuit electrically connected to the second conductor between the ring electrode and the conductive base, the potential control circuit including at least one variable impedance element.
  • a technology can be provided that can suitably adjust the potential of the edge ring.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing system.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing apparatus.
  • 4A to 4C are diagrams for explaining configuration examples of a substrate support section and an electric circuit.
  • FIG. 2 is a diagram for explaining a configuration example of a potential control circuit;
  • FIG. 4 is a diagram illustrating an example of control by a control unit.
  • FIG. 2 is a diagram showing an example of an RF signal and a pulsed voltage signal in a first process.
  • FIG. 11 is a diagram illustrating another example of control by the control unit.
  • FIG. 13 is a diagram showing an example of an RF signal and a pulsed voltage signal in a second process.
  • FIG. 11 is a diagram illustrating another example of control by the control unit.
  • FIG. 13 is a diagram showing an example of an RF signal and a pulsed voltage signal in the third process.
  • 13A and 13B are diagrams for explaining other configuration examples of the substrate support portion and the electric circuit.
  • a plasma processing apparatus in one exemplary embodiment, includes a chamber, a substrate support disposed within the chamber, the substrate support including a conductive base, an electrostatic chuck disposed on the conductive base and having a substrate support surface and a ring support surface, a substrate electrode disposed within the electrostatic chuck below the substrate support surface and electrically connected to the conductive base via a first conductor, a ring electrode disposed within the electrostatic chuck below the ring support surface and electrically connected to the conductive base via a second conductor, and an edge ring disposed on the ring support surface to surround a substrate disposed on the substrate support surface, an RF generator electrically connected to the conductive base and configured to generate an RF signal, a voltage pulse generator electrically connected to the conductive base and configured to generate a pulsed voltage signal, and a potential control circuit electrically connected on the second conductor between the ring electrode and the conductive base, the potential control circuit including at least one variable impedance element.
  • the substrate support is configured such that the height of the top surface of the edge ring is greater than the height of the top surface of a substrate disposed on the substrate support surface.
  • the substrate support includes at least one substrate chuck electrode disposed between the substrate electrode and the substrate support surface within the electrostatic chuck.
  • the substrate support includes at least one ring chuck electrode disposed between the ring electrode and the ring support surface within the electrostatic chuck.
  • the substrate support includes at least one substrate heating element, the at least one substrate heating element being disposed below the substrate electrode within the electrostatic chuck.
  • the at least one substrate heating element includes a plurality of substrate heating elements arranged in a horizontal direction.
  • the substrate support includes at least one ring heating element, the at least one ring heating element being disposed below the ring electrode within the electrostatic chuck.
  • the at least one ring heating element includes a plurality of ring heating elements arranged in a horizontal direction.
  • the plasma processing apparatus further includes an RF filter electrically connected between the voltage pulse generator and the conductive base, and a voltage pulse filter electrically connected between the RF generator and the conductive base.
  • the plasma processing apparatus further includes a controller configured to adjust at least one variable impedance element based on the amount of wear of the edge ring.
  • the edge ring wear is determined based on the operation time of the RF generator.
  • the at least one variable impedance element includes first and second variable capacitors connected in parallel, the first variable capacitor configured to control an RF signal supplied to the ring electrode and the second variable capacitor configured to control a pulsed voltage signal applied to the ring electrode.
  • the potential control circuit includes a filter connected in parallel with the second variable capacitor.
  • the plasma processing apparatus further includes a control unit configured to perform the steps of: (a) adjusting the first variable capacitor; and (b) after (a), performing a first process, where in (b), the RF signal has a first power level greater than a zero power level and the pulsed voltage signal has a zero voltage level.
  • control unit is configured to perform (c) adjusting the second variable capacitor; and (d) performing a second process after (c), where in (d) the RF signal has a zero power level and the pulsed voltage signal has a first voltage level greater than the zero voltage level.
  • the first voltage level has a negative polarity.
  • control unit is configured to perform (e) a step of adjusting the second variable capacitor, and (f) a step of performing a third process after (e), where in (f), the RF signal has the first power level or a second power level different from the first power level, and the pulsed voltage signal has the first voltage level or a second voltage level different from the first voltage level.
  • a plasma processing apparatus in one exemplary embodiment, includes a chamber, a substrate support disposed within the chamber, the substrate support including a conductive base, an electrostatic chuck disposed on the conductive base and having a substrate support surface and a ring support surface, a substrate electrode disposed within the electrostatic chuck below the substrate support surface and electrically connected to the conductive base via a first conductor, a ring electrode disposed within the electrostatic chuck below the ring support surface and electrically connected to the conductive base via a second conductor, and an edge ring disposed on the ring support surface to surround a substrate disposed on the substrate support surface, at least one power source electrically connected to the conductive base, and a potential control circuit electrically connected to the second conductor between the ring electrode and the conductive base, the potential control circuit including at least one variable impedance element.
  • FIG. 1 is a diagram for explaining a configuration example of a plasma processing system.
  • the plasma processing system includes a plasma processing device 1 and a control unit 2.
  • the plasma processing system is an example of a substrate processing system
  • the plasma processing device 1 is an example of a substrate processing device.
  • the plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12.
  • the plasma processing chamber 10 has a plasma processing space.
  • the plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space.
  • the gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later.
  • the substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.
  • the plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space.
  • the plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), Helicon wave excited plasma (HWP: Helicon Wave Plasma), or surface wave plasma (SWP: Surface Wave Plasma), etc.
  • various types of plasma generating units may be used, including AC (Alternating Current) plasma generating units and DC (Direct Current) plasma generating units.
  • the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz.
  • AC signals include RF (Radio Frequency) signals and microwave signals.
  • the RF signal has a frequency in the range of 100 kHz to 150 MHz.
  • the control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform the various steps described in this disclosure.
  • the control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1.
  • the control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3.
  • the control unit 2 is realized, for example, by a computer 2a.
  • the processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary.
  • the acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed.
  • the medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3.
  • the processing unit 2a1 may be a CPU (Central Processing Unit).
  • the memory unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination of these.
  • the communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).
  • FIG. 1 is a diagram for explaining a configuration example of the capacitively coupled plasma processing device 1.
  • the capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 (also simply referred to as the "chamber"), a gas supply unit 20, a power supply 30, and an exhaust system 40.
  • the plasma processing apparatus 1 also includes a substrate support unit 11 and a gas inlet unit.
  • the gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10.
  • the gas inlet unit includes a shower head 13.
  • the substrate support unit 11 is disposed in the plasma processing chamber 10.
  • the shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10.
  • the plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11.
  • the plasma processing chamber 10 is grounded.
  • the shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.
  • the substrate support 11 includes a main body 111 and a ring assembly 112.
  • the main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112.
  • a wafer is an example of a substrate W.
  • the annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view.
  • the substrate W is disposed on the central region 111a of the main body 111
  • the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.
  • the main body 111 includes a base 1110 (also referred to as a "conductive base") and an electrostatic chuck 1111.
  • the base 1110 includes a conductive member.
  • the conductive member of the base 1110 can function as a lower electrode.
  • the electrostatic chuck 1111 is disposed on the base 1110.
  • the electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a.
  • the ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b.
  • the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member.
  • at least one RF/DC electrode coupled to an RF power source 31 and/or a DC power source 32 described later may be disposed in the ceramic member 1111a.
  • the at least one RF/DC electrode functions as a lower electrode.
  • the RF/DC electrode is also called a bias electrode.
  • the conductive member of the base 1110 and the at least one RF/DC electrode may function as multiple lower electrodes.
  • the electrostatic electrode 1111b may function as a lower electrode.
  • the substrate support 11 includes at least one lower electrode.
  • the ring assembly 112 includes one or more annular members.
  • the one or more annular members include one or more edge rings and at least one cover ring.
  • the edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.
  • the substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature.
  • the temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof.
  • a heat transfer fluid such as brine or a gas flows through the flow passage 1110a.
  • the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111.
  • the substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.
  • the shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s.
  • the shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c.
  • the processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c.
  • the shower head 13 also includes at least one upper electrode.
  • the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGI) attached to one or more openings formed in the sidewall 10a.
  • SGI side gas injectors
  • the gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22.
  • the gas supply unit 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13.
  • Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.
  • the power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit.
  • the RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and/or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s.
  • the RF power supply 31 can function as at least a part of the plasma generating unit 12.
  • a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.
  • the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b.
  • the first RF generating unit 31a is coupled to at least one lower electrode and/or at least one upper electrode via at least one impedance matching circuit and configured to generate a source RF signal (source RF power) for plasma generation.
  • the source RF signal has a frequency in the range of 10 MHz to 150 MHz.
  • the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and/or at least one upper electrode.
  • the second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power).
  • the frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal.
  • the bias RF signal has a lower frequency than the frequency of the source RF signal.
  • the bias RF signal has a frequency in the range of 100 kHz to 60 MHz.
  • the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies.
  • the generated one or more bias RF signals are provided to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.
  • the power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10.
  • the DC power supply 32 includes a first DC generator 32a and a second DC generator 32b.
  • the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal.
  • the generated first DC signal is applied to the at least one lower electrode.
  • the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal.
  • the generated second DC signal is applied to the at least one upper electrode.
  • the first and second DC signals may be pulsed.
  • a sequence of voltage pulses is applied to at least one lower electrode and/or at least one upper electrode.
  • the voltage pulses may have a rectangular, trapezoidal, triangular or combination thereof pulse waveform.
  • a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode.
  • the first DC generator 32a and the waveform generator constitute a voltage pulse generator.
  • the second DC generator 32b and the waveform generator constitute a voltage pulse generator
  • the voltage pulse generator is connected to at least one upper electrode.
  • the voltage pulses may have a positive polarity or a negative polarity.
  • the sequence of voltage pulses may also include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one period.
  • the first and second DC generating units 32a and 32b may be provided in addition to the RF power source 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.
  • the exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10.
  • the exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve.
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
  • FIG. 3 is a diagram for explaining an example of the configuration of the substrate support part 11 and the electrical circuit in one embodiment.
  • the substrate support part 11 may include a conductive base 1110, an electrostatic chuck 1111, a substrate electrode 200, a ring electrode 201, and an edge ring 202.
  • the electrostatic chuck 1111 may include, on its upper surface, a substrate support surface 210a and a ring support surface 210b arranged to surround the substrate support surface 210a.
  • the substrate support surface 210a may be an example of the central region 111a shown in FIG. 2.
  • the ring support surface 210b may be an example of the annular region 111b shown in FIG. 2.
  • the substrate electrode 200 may be disposed within the electrostatic chuck 1111.
  • the substrate electrode 200 may be disposed below the substrate support surface 210a.
  • the substrate electrode 200 may be electrically connected to the conductive base 1110 via the first conductor 220.
  • the substrate electrode 200 may have a circular shape.
  • the substrate electrode 200 may be disposed such that its center coincides with that of the electrostatic chuck 1111 in a plan view.
  • the ring electrode 201 may be disposed within the electrostatic chuck 1111.
  • the ring electrode 201 may be disposed below the ring support surface 210b.
  • the ring electrode 201 may be electrically connected to the conductive base 1110 via the second conductor 221.
  • the ring electrode 201 may have an annular shape.
  • the ring electrode 201 may be disposed so that its center coincides with that of the electrostatic chuck 1111 in a plan view.
  • the edge ring 202 may be disposed on the ring support surface 210b so as to surround the substrate W disposed on the substrate support surface 210a.
  • the edge ring 202 may be configured so that the height of its upper surface is greater than the height of the upper surface of the substrate W disposed on the substrate support surface 210a.
  • the vertical thickness of the edge ring 202 may be set to a thickness that makes the substrate W and the plasma sheath PS above the edge ring 202 horizontal when the capacitance of the variable capacitors 270, 271 described below is set to the maximum (impedance is set to the minimum).
  • the edge ring 202 may be included in the ring assembly 112 shown in FIG. 2.
  • the conductive base 1110 may be electrically connected to the RF generator 230 via the third conductor 222.
  • the RF generator 230 may be configured to generate an RF signal.
  • the RF generator 230 may be configured to generate a bias RF signal.
  • the bias RF signal may have a frequency in the range of 100 kHz to 60 MHz.
  • the RF generator 230 may be configured to generate a source RF signal for plasma generation.
  • the source RF signal may have a frequency in the range of 10 MHz to 150 MHz.
  • the RF generator 230 may be an example of the second RF generating unit 31b shown in FIG. 2.
  • the conductive base 1110 may be electrically connected to a voltage pulse generator 240 via a third conductor 222.
  • the voltage pulse generator 240 may be configured to generate a pulsed voltage signal.
  • the voltage pulse generator 240 may be an example of the first DC generating unit 32a shown in FIG. 2.
  • the substrate electrode 200 shown in FIG. 3 may be electrically connected to the RF generator 230 and the voltage pulse generator 240 via the first conductor 220, the conductive base 1110, and the third conductor 222.
  • the ring electrode 201 may be electrically connected to the RF generator 230 and the voltage pulse generator 240 via the second conductor 221, the conductive base 1110, and the third conductor 222.
  • a potential control circuit 250 may be electrically connected to the second conductor 221 between the ring electrode 201 and the conductive base 1110.
  • the potential control circuit 250 may include at least one variable impedance element 251.
  • the variable impedance element 251 may include a first variable capacitor 270 and a second variable capacitor 271.
  • the potential control circuit 250 may include a first circuit conductor 260 and a second circuit conductor 261 connected in parallel.
  • the first variable capacitor 270 may be disposed on the first circuit conductor 260, and the second variable capacitor 271 may be disposed on the second circuit conductor 261.
  • the first variable capacitor 270 and the second variable capacitor 271 may be configured to vary the capacitance.
  • the first variable capacitor 270 may be configured to control the RF signal supplied to the ring electrode 201 by changing the capacitance to adjust the impedance.
  • the second variable capacitor may be configured to control the pulsed voltage signal applied to the ring electrode 201 by changing the capacitance to adjust the impedance.
  • the second variable capacitor 271 may be configured to vary the capacitance in a range that is relatively higher than that of the first variable capacitor 270.
  • the potential control circuit 250 may include a third circuit conductor 262 connected in parallel with the second circuit conductor 261.
  • a filter 272 may be disposed in the third circuit conductor 262.
  • the filter 272 may include a coil.
  • the filter 272 may be configured to resonate with the second variable capacitor 271 when a high-frequency RF signal is input, and to increase the impedance of the second circuit conductor 261 and the third circuit conductor 262.
  • the filter 272 may be configured not to resonate with the second variable capacitor 271 when a low-frequency pulsed voltage signal is input, and to pass the pulsed voltage signal through the second circuit conductor 261.
  • the high-frequency RF signal may mainly pass through the first circuit conductor 260, and the low-frequency pulsed voltage signal may mainly pass through the second circuit conductor 261.
  • the first variable capacitor 270 and the second variable capacitor 271 may have their capacitances (impedances) adjusted by the control unit 2.
  • a voltage pulse filter 280 may be electrically connected to the third conductor 222 between the RF generator 230 and the conductive base 1110.
  • the voltage pulse filter 280 may be configured to prevent the pulsed voltage signal provided by the voltage pulse generator 240 from entering the RF generator 230 via the third conductor 222.
  • An RF filter 281 may be electrically connected to the third conductor 222 between the voltage pulse generator 240 and the conductive base 1110.
  • the RF filter 281 may be configured to prevent the RF signal supplied from the RF generator 230 from entering the voltage pulse generator 240 via the third conductor 222.
  • the substrate support 11 may further include at least one substrate chuck electrode 300 and at least one ring chuck electrode 301.
  • At least one substrate chuck electrode 300 may be disposed between the substrate support surface 210a and the substrate electrode 200 in the electrostatic chuck 1111.
  • the substrate chuck electrode 300 may be electrically connected to a DC power supply 351 via a fourth conductor 350.
  • At least one filter 352 of an RF filter and a voltage pulse filter may be electrically connected to the fourth conductor 350.
  • the fourth conductor 350 may be electrically insulated from the conductive base 1110.
  • an electrostatic attraction force (Coulomb force) is generated between the substrate chuck electrode 300 and the substrate W.
  • the substrate W may be attracted to the electrostatic chuck 1111 by the electrostatic attraction force and adsorbed and held on the substrate support surface 210a.
  • the substrate chuck electrode 300 may include multiple substrate chuck electrodes.
  • the substrate chuck electrode 300 may be an example of the electrostatic electrode 1111b shown in FIG. 2.
  • At least one ring chuck electrode 301 may be disposed between the ring support surface 210b and the ring electrode 201 within the electrostatic chuck 1111.
  • the ring chuck electrode 301 may include an inner chuck electrode 360 and an outer chuck electrode 361.
  • the inner chuck electrode 360 and the outer chuck electrode 361 may have a circular ring shape.
  • the inner chuck electrode 360 and the outer chuck electrode 361 may be arranged so that their centers coincide in a plan view.
  • the inner chuck electrode 360 and the outer chuck electrode 361 may be arranged at the same position in the vertical direction.
  • the inner chuck electrode 360 may be electrically connected to a DC power supply 371 via a fifth conductor 370.
  • the outer chuck electrode 361 may be electrically connected to a DC power supply 381 via a sixth conductor 380.
  • the ring chuck electrode 301 may set a potential difference between the inner chuck electrode 360 and the outer chuck electrode 361, and the edge ring 202 may be attracted and held to the ring support surface 210b by the potential difference.
  • At least one filter 372, 382 of an RF filter and a voltage pulse filter may be electrically connected to the fifth conductor 370 and the sixth conductor 380.
  • the fifth conductor 370 and the sixth conductor 380 may be electrically insulated from the conductive base 1110.
  • the ring chuck electrode 301 may include one chuck electrode or may include three or more chuck electrodes.
  • the plasma processing method includes an etching process that uses plasma to etch a film on the substrate W.
  • the plasma processing method is executed by a control unit 2 in a plasma processing apparatus 1.
  • the substrate W is carried into the chamber 10 by the transport arm, placed on the substrate support 11 by the lifter, and held by suction on the substrate support 11 as shown in FIG. 2.
  • the processing gas is supplied to the shower head 13 by the gas supply unit 20, and is supplied from the shower head 13 to the plasma processing space 10s.
  • the processing gas supplied at this time includes a gas that generates active species necessary for the etching process of the substrate W.
  • a source RF signal is supplied from the RF power supply 31 to the upper electrode or the lower electrode.
  • a bias RF signal or a pulsed voltage signal is supplied from the RF power supply 31 or the DC power supply 32 to the lower electrode.
  • the atmosphere in the plasma processing space 10s is exhausted from the gas exhaust port 10e, and the inside of the plasma processing space 10s is depressurized. As a result, plasma is generated from the processing gas on the substrate support portion 11 of the plasma processing space 10s, and the substrate W is etched.
  • FIG. 5 is a flow diagram illustrating an example of control by the control unit 2.
  • the control shown in FIG. 5 may be a case where an RF signal is supplied to the substrate electrode 200 and the ring electrode 201.
  • the control unit 2 may perform step ST1 of adjusting the first variable capacitor 270, and step ST2 of executing the first process after step ST1.
  • the capacitance of the first variable capacitor 270 may be adjusted to adjust the impedance of the potential control circuit 250.
  • the capacitance of the first variable capacitor 270 may be adjusted so that the potential of the edge ring 202 approaches a potential at which the plasma sheath PS generated on the substrate W and the edge ring 202 approaches horizontal.
  • the adjustment of the capacitance of the first variable capacitor 270 may be performed based on the amount of wear of the edge ring 202.
  • the amount of wear of the edge ring 202 may be determined based on the cumulative time during which an RF signal is supplied from the RF generator 230 to the conductive base 1110, that is, the operation time of the RF generator 230.
  • the amount of wear of the edge ring 202 may be detected by a sensor or the like. As the amount of wear of the edge ring 202 increases, the capacitance of the first variable capacitor 270 may be increased. Step ST1 may be performed before plasma is generated.
  • an RF signal may be supplied from the RF generator 230 to the conductive base 1110.
  • the RF signal may be a bias RF signal.
  • the RF signal may have a first power level P1 greater than the zero power level P0 (RF signal is ON).
  • the pulsed voltage signal supplied from the voltage pulse generator 240 to the conductive base 1110 may have a zero voltage level V0 (pulsed voltage signal is OFF).
  • the RF signal may be supplied from the RF generator 230 shown in FIG. 3 to the substrate electrode 200 via the third conductor 222, the conductive base 1110, and the first conductor 220.
  • the RF signal may be supplied from the RF generator 230 to the ring electrode 201 via the third conductor 222, the conductive base 1110, and the second conductor 221.
  • the RF signal may pass mainly through the first variable capacitor 270 in the potential control circuit 250 of the second conductor 221 shown in FIG. 5.
  • the potential of the ring electrode 201 and the edge ring 202 may be determined by the impedance determined by the first variable capacitor 270.
  • the RF signal may resonate in the second variable capacitor 271 and the filter 272, increasing the impedance and suppressing the flow to the second variable capacitor 271. In this way, the potential of the ring electrode 201 and the edge ring 202 may be adjusted relative to the potential of the substrate electrode 200 and the substrate W shown in FIG.
  • the plasma sheath PS generated on the substrate W and the edge ring 202 may be brought closer to the horizontal.
  • plasma ions may be supplied perpendicularly to the substrate W near the outer periphery of the substrate W. Therefore, the tilt angle (the angle of incidence of ions to the substrate W) may be maintained at 90°.
  • FIG. 7 is a flow diagram illustrating another example of control by the control unit 2.
  • the control shown in FIG. 7 may be a case where a pulsed voltage signal is supplied to the substrate electrode 200 and the ring electrode 201.
  • the control unit 2 may execute step ST3 of adjusting the second variable capacitor 271, and step ST4 of executing the second process after step ST3.
  • the capacitance of the second variable capacitor 271 may be adjusted to adjust the impedance of the potential control circuit 250.
  • the capacitance of the second variable capacitor 271 may be adjusted so that the potential of the ring electrode 201 and the edge ring 202 is such that the plasma sheath PS generated on the substrate W and on the edge ring 202 approaches horizontal.
  • the capacitance of the second variable capacitor 271 may be adjusted based on the amount of wear of the edge ring 202.
  • the amount of wear of the edge ring 202 may be determined based on the accumulated time (operation time of the voltage pulse generator 240) during which a pulsed voltage signal is supplied from the voltage pulse generator 240 to the conductive base 1110.
  • the amount of wear of the edge ring 202 may be detected by a sensor or the like. As the amount of wear of the edge ring 202 increases, the capacitance of the second variable capacitor 271 may be increased.
  • Step ST3 may be performed before plasma is generated.
  • a pulsed voltage signal may be supplied from the voltage pulse generator 240 to the conductive base 1110.
  • the pulsed voltage signal may have a first voltage level V1 greater than the zero voltage level V0 (the pulsed voltage signal is ON).
  • the first voltage level V1 may have negative polarity.
  • the RF signal supplied from the RF generator 230 to the conductive base 1110 may have a zero power level P0 (the RF signal is OFF).
  • the pulsed voltage signal may be supplied from the voltage pulse generator 240 shown in FIG. 3 to the substrate electrode 200 via the third conductor 222, the conductive base 1110, and the first conductor 220.
  • the pulsed voltage signal may be supplied from the voltage pulse generator 240 to the ring electrode 201 via the third conductor 222, the conductive base 1110, and the second conductor 221.
  • the pulsed voltage signal may pass mainly through the second variable capacitor 271 in the potential control circuit 250 of the second conductor 221 shown in FIG. 5.
  • the potential of the ring electrode 201 and the edge ring 202 may be determined by the impedance determined by the second variable capacitor 271.
  • the impedance of the pulsed voltage signal may be high in the first variable capacitor 270, which has a relatively low capacitance, and the flow of the pulsed voltage signal to the first variable capacitor 270 may be suppressed.
  • the potential of the ring electrode 201 and the edge ring 202 may be adjusted relative to the potential of the substrate electrode 200 and the substrate W shown in FIG. 3, and the plasma sheath PS generated on the substrate W and the edge ring 202 may be brought closer to the horizontal.
  • plasma ions may be supplied perpendicularly to the substrate W near the outer periphery of the substrate W. Therefore, the tilt angle (the angle of incidence of ions to the substrate W) may be maintained at 90°.
  • FIG. 9 is a flow diagram illustrating another example of control by the control unit 2.
  • the control shown in FIG. 9 may be a case where an RF signal and a pulsed voltage signal are supplied to the substrate electrode 200 and the ring electrode 201.
  • the control unit 2 may execute step ST5 of adjusting the second variable capacitor 271, and step ST6 of executing a third process after step ST5.
  • the capacitance of the second variable capacitor 271 may be adjusted to adjust the impedance of the potential control circuit 250.
  • the capacitance of the second variable capacitor 271 may be adjusted so that the potential of the ring electrode 201 and the edge ring 202 is such that the plasma sheath PS generated on the substrate W and on the edge ring 202 approaches horizontal.
  • the capacitance of the second variable capacitor 271 may be adjusted based on the amount of wear of the edge ring 202.
  • the amount of wear of the edge ring 202 may be determined based on the accumulated time (operation time of the voltage pulse generator 240) during which a pulsed voltage signal is supplied from the voltage pulse generator 240 to the conductive base 1110.
  • the amount of wear of the edge ring 202 may be detected by a sensor or the like. As the amount of wear of the edge ring 202 increases, the capacitance of the second variable capacitor 271 may be increased.
  • Step ST3 may be performed before plasma is generated.
  • an RF signal may be supplied from the RF generator 230 to the conductive base 1110, and a pulsed voltage signal may be supplied from the voltage pulse generator 240 to the conductive base 1110.
  • the RF signal may have a first power level P1 greater than the zero power level, or a second power level P2 different from the first power level P1 (RF signal is ON).
  • the pulsed voltage signal may have a first voltage level V1, or a second voltage level V2 different from the first voltage level V1 (pulsed voltage signal is ON).
  • the RF signal and the pulsed voltage signal may be supplied to the substrate electrode 200 via the third conductor 222, the conductive base 1110, and the first conductor 220 shown in FIG. 3.
  • the RF signal and the pulsed voltage signal may be supplied to the ring electrode 201 via the third conductor 222, the conductive base 1110, and the second conductor 221.
  • the RF signal may pass mainly through the first variable capacitor 270 in the potential control circuit 250 of the second conductor 221 shown in FIG. 5, and the pulsed voltage signal may pass mainly through the second variable capacitor 271 in the potential control circuit 250 of the second conductor 221.
  • the impedance of the second variable capacitor 271 may adjust the potential of the ring electrode 201 and the edge ring 202. In this way, the potential of the ring electrode 201 and the edge ring 202 may be adjusted relative to the potential of the substrate electrode 200 and the substrate W shown in FIG.
  • the plasma sheath PS generated on the substrate W and the edge ring 202 may be brought closer to the horizontal.
  • plasma ions may be supplied perpendicularly to the substrate W near the outer periphery of the substrate W. Therefore, the tilt angle (the angle of incidence of ions to the substrate W) may be maintained at 90°.
  • control for executing steps S1 and S2 the control for executing steps S3 and S4, and the control for executing steps S5 and S6 may be performed consecutively in any order.
  • the plasma processing apparatus 1 includes a ring electrode 201 disposed in the electrostatic chuck 1111 and electrically connected to the conductive base 1110 via a second conductor 221, and a potential control circuit 250 electrically connected to the second conductor 221 between the ring electrode 201 and the conductive base 1110, and the potential control circuit 250 includes at least one variable impedance element 251. This allows the potential of the edge ring 202 to be suitably adjusted by changing the impedance of the variable impedance element 251 of the potential control circuit 250 to adjust the potential of the ring electrode 201.
  • the potential of the edge ring 202 can be adjusted according to the amount of wear of the edge ring 202, and the plasma sheath PS generated on the substrate W and the edge ring 202 can be maintained horizontal. Therefore, the tilt angle (the angle of incidence of ions to the substrate W) can be maintained at 90° near the outer periphery of the substrate W.
  • the substrate support 11 may include at least one substrate heating element 400.
  • the substrate heating element 400 may be disposed below the substrate electrode 200 in the electrostatic chuck 1111.
  • the substrate support 11 may also include at least one ring heating element 410.
  • the ring heating element 410 may be disposed below the ring electrode 201 in the electrostatic chuck 1111.
  • the substrate heating element 400 may include a plurality of substrate heating elements arranged in a horizontal direction.
  • the ring heating element 410 may include a plurality of ring heating elements arranged in a horizontal direction.
  • the substrate heating element 400 and the ring heating element 410 may be connected to a heating element power supply 421 via a seventh conductor 420.
  • At least one filter 422 of an RF filter and a voltage pulse filter may be electrically connected to the seventh conductor 420.
  • the seventh conductor 420 may be electrically insulated from the conductive base 1110.
  • variable impedance element 251 of the potential control circuit 250 described in the above embodiment may include at least one selected from a variable capacitor, a variable resistor, and a variable inductor.
  • the above embodiment is a capacitively coupled plasma processing apparatus, but is not limited to this and may be applied to other plasma processing apparatuses.
  • an inductively coupled plasma processing apparatus may be used instead of a capacitively coupled plasma processing apparatus.
  • a chamber A substrate support disposed within the chamber, the substrate support comprising: A conductive base; an electrostatic chuck disposed on the conductive base and having a substrate support surface and a ring support surface; a substrate electrode disposed within the electrostatic chuck below the substrate support surface and electrically connected to the conductive base via a first conductor; a ring electrode disposed within the electrostatic chuck below the ring support surface and electrically connected to the conductive base via a second conductor; an edge ring disposed on the ring support surface to surround a substrate disposed on the substrate support surface; an RF generator electrically connected to the conductive base and configured to generate an RF signal; a voltage pulse generator electrically connected to the conductive base and configured to generate a pulsed voltage signal; a potential control circuit electrically connected on the second conductor between the ring electrode and the conductive base, the potential control circuit including at least one variable impedance element.
  • the substrate support is configured such that a height of a top surface of the edge ring is greater than a height of a top surface of a substrate disposed on the substrate support surface; 2.
  • the substrate support includes at least one substrate chuck electrode; the at least one substrate chuck electrode is disposed within the electrostatic chuck between the substrate electrode and the substrate support surface.
  • the substrate support includes at least one ring chuck electrode; the at least one ring chuck electrode is disposed within the electrostatic chuck between the ring electrode and the ring support surface. 4. The plasma processing apparatus according to claim 1 .
  • the substrate support includes at least one substrate heating element; the at least one substrate heating element is disposed within the electrostatic chuck below the substrate electrode. 5.
  • the plasma processing apparatus according to claim 1 the substrate support includes at least one substrate heating element; the at least one substrate heating element is disposed within the electrostatic chuck below the substrate electrode. 5.
  • the at least one substrate heating element includes a plurality of substrate heating elements arranged in a horizontal direction; 6.
  • the substrate support includes at least one ring heating element; the at least one ring heating element is disposed within the electrostatic chuck below the ring electrode. 7.
  • the plasma processing apparatus according to claim 1 the substrate support includes at least one ring heating element; the at least one ring heating element is disposed within the electrostatic chuck below the ring electrode.
  • the at least one ring heating element includes a plurality of ring heating elements arranged in a horizontal direction; 8. The plasma processing apparatus according to claim 7.
  • the wear rate of the edge ring is determined based on an operation time of the RF generator. 11.
  • the at least one variable impedance element includes first and second variable capacitors connected in parallel; the first variable capacitor is configured to control an RF signal supplied to the ring electrode; the second variable capacitor is configured to control a pulsed voltage signal applied to the ring electrode.
  • the potential control circuit includes a filter connected in parallel with the second variable capacitor; 13.
  • a control unit is further provided.
  • the control unit is (a) adjusting the first variable capacitor; (b) after (a), executing a first process; In (b), the RF signal has a first power level greater than a zero power level, and the pulsed voltage signal has a zero voltage level. 14.
  • the plasma processing apparatus according to claim 12 or 13.
  • the control unit is (c) adjusting the second variable capacitor; (d) after (c), performing a second process; In (d), the RF signal has a zero power level and the pulsed voltage signal has a first voltage level greater than a zero voltage level. 15.
  • the plasma processing apparatus according to any one of claims 12 to 14.
  • the control unit is (e) adjusting the second variable capacitor; (f) after (e), performing a third process; In the (f), the RF signal has the first power level or a second power level different from the first power level, and the pulsed voltage signal has the first voltage level or a second voltage level different from the first voltage level. 17.
  • the plasma processing apparatus according to any one of claims 12 to 16.
  • a chamber A substrate support disposed within the chamber, the substrate support comprising: A conductive base; an electrostatic chuck disposed on the conductive base and having a substrate support surface and a ring support surface; a substrate electrode disposed within the electrostatic chuck below the substrate support surface and electrically connected to the conductive base via a first conductor; a ring electrode disposed within the electrostatic chuck below the ring support surface and electrically connected to the conductive base via a second conductor; an edge ring disposed on the ring support surface to surround a substrate disposed on the substrate support surface; at least one power source electrically connected to the conductive base; a potential control circuit electrically connected on the second conductor between the ring electrode and the conductive base, the potential control circuit including at least one variable impedance element.
  • 1...plasma processing apparatus 10...chamber, 11...substrate support, 200...substrate electrode, 201...ring electrode, 202...edge ring, 1110...conductive base, 1111...electrostatic chuck, 230...RF generator, 240...voltage pulse generator, 250...potential control circuit, 251...variable impedance element, W...substrate

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
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  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022004209A1 (ja) * 2020-06-29 2022-01-06 住友大阪セメント株式会社 静電チャック
WO2022201351A1 (ja) * 2021-03-24 2022-09-29 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
WO2022255118A1 (ja) * 2021-06-01 2022-12-08 東京エレクトロン株式会社 プラズマ処理装置及び基板支持器
JP2022184788A (ja) * 2021-05-31 2022-12-13 東京エレクトロン株式会社 プラズマ処理装置
WO2023026908A1 (ja) * 2021-08-27 2023-03-02 東京エレクトロン株式会社 基板支持器及び基板処理装置
JP2023046283A (ja) * 2021-09-21 2023-04-03 東京エレクトロン株式会社 プラズマ処理装置及びエッチング方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022004209A1 (ja) * 2020-06-29 2022-01-06 住友大阪セメント株式会社 静電チャック
WO2022201351A1 (ja) * 2021-03-24 2022-09-29 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP2022184788A (ja) * 2021-05-31 2022-12-13 東京エレクトロン株式会社 プラズマ処理装置
WO2022255118A1 (ja) * 2021-06-01 2022-12-08 東京エレクトロン株式会社 プラズマ処理装置及び基板支持器
WO2023026908A1 (ja) * 2021-08-27 2023-03-02 東京エレクトロン株式会社 基板支持器及び基板処理装置
JP2023046283A (ja) * 2021-09-21 2023-04-03 東京エレクトロン株式会社 プラズマ処理装置及びエッチング方法

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