WO2024198638A1 - 一种石英坩埚及提高石英坩埚内表面粗糙度的方法 - Google Patents

一种石英坩埚及提高石英坩埚内表面粗糙度的方法 Download PDF

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Publication number
WO2024198638A1
WO2024198638A1 PCT/CN2024/072104 CN2024072104W WO2024198638A1 WO 2024198638 A1 WO2024198638 A1 WO 2024198638A1 CN 2024072104 W CN2024072104 W CN 2024072104W WO 2024198638 A1 WO2024198638 A1 WO 2024198638A1
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WIPO (PCT)
Prior art keywords
crucible
grinding
quartz crucible
side wall
quartz
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PCT/CN2024/072104
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English (en)
French (fr)
Inventor
沈浩平
李建军
王林
谷守伟
梁山
徐强
张文霞
吴树飞
赵国伟
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Tcl中环新能源科技股份有限公司
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Publication of WO2024198638A1 publication Critical patent/WO2024198638A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/033—Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
    • B24B5/02—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work
    • B24B5/06—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work for grinding cylindrical surfaces internally
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
    • B24B5/02—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work
    • B24B5/06—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work for grinding cylindrical surfaces internally
    • B24B5/10—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work for grinding cylindrical surfaces internally involving a horizontal tool spindle
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Definitions

  • the embodiments of the present application relate to, but are not limited to, the field of solar photovoltaic technology, and specifically relate to a quartz crucible and a method for improving the inner surface roughness of the quartz crucible.
  • the quartz crucible is formed into a finished product style at one time, leaving only a margin in height. After melting, the reserved height above is cut to meet the specified height requirements. Since the height of the quartz crucible mold is higher than the finished product height, the quartz raw sand can be formed normally at the above reserved place, but the position of the electrode column is relatively fixed. During the manufacturing process of the quartz crucible, the demand for heat at the bottom is higher than that at the top, and the highest temperature area of the electrode column cannot rise to the upper edge of the crucible, otherwise it will cause a lot of heat energy waste and affect the melting effect of the bottom of the crucible.
  • the temperature of the upper edge is lower than that of the middle and lower parts during the melting process of the crucible, and there are a large number of unmelted quartz microparticles.
  • the above quartz microparticles are at risk of falling on the inner surface of the crucible, resulting in the quartz microparticles being embedded in the inner wall of the quartz crucible.
  • the microparticles embedded in the inner wall are at risk of falling off, increasing the risk of heterogeneous nucleation of silicon single crystals.
  • the present application provides a quartz crucible and a method for improving the inner surface roughness of the quartz crucible, wherein unmelted quartz microparticles on the inner wall of the quartz crucible are removed by special equipment in combination with a customized process, thereby improving the use effect of the quartz crucible and reducing the abnormal breaking of the crucible during the pulling process of silicon single crystals.
  • a quartz crucible comprises: a crucible body, the crucible body comprising a crucible side wall and a crucible bottom, the crucible bottom comprising a bottom and an arc transition portion, the arc transition portion being arranged along the circumference of the bottom;
  • the side wall is arranged around the arc transition portion, and the outermost layer of the inner surface of the crucible side wall is provided with a ground layer, and the thickness of the ground layer ranges from 0.01 mm to 1 mm.
  • the present application also discloses a method for improving the inner surface roughness of a quartz crucible, the steps of which are: grinding the inner surface of the side wall of the crucible by a grinding mechanism to obtain the quartz crucible.
  • the step of grinding the inner surface of the crucible side wall by a grinding mechanism comprises:
  • the grinding part on the grinding mechanism extends from an initial position into the quartz crucible, and the grinding part is adjusted to fit the side wall of the crucible;
  • the support seat drives the quartz crucible to rotate, and the grinding part moves away from the quartz crucible at a preset speed until the grinding part is separated from the inner wall of the crucible, thereby completing the grinding.
  • the support seat comprises: rollers and roller supports arranged in pairs, both ends of the rollers are sleeved on the roller supports, and the quartz crucible is driven to rotate by the pair of rollers;
  • the quartz crucible is arranged between a pair of rollers, and the rollers drive the quartz crucible to operate at a speed ranging from 10 rpm to 30 rpm.
  • the front end of the grinding portion extends from an initial position into a junction between the arc transition portion in the quartz crucible and the side wall of the crucible.
  • the hardness of the grinding portion is greater than the hardness of silicon dioxide.
  • the grinding part is controlled to descend until it contacts the inner surface of the crucible side wall, and after contact, the grinding part slowly moves away from the quartz crucible at a speed ranging from 0.5 mm/s to 5.0 mm/s, and the rotation speed of the grinding part is from 1000 rpm to 10000 rpm.
  • the support seat is controlled to carry the quartz crucible upward until the grinding part contacts the inner surface of the crucible side wall, and after contact, the grinding part slowly moves away from the quartz crucible at a speed ranging from 0.5 mm/s to 5.0 mm/s, and the rotation speed of the grinding part is from 1000 rpm to 10000 rpm.
  • the present application further discloses a grinding mechanism, comprising:
  • a support seat which is arranged on one side of the base and is used to support and drive the quartz crucible to rotate;
  • a grinding part which is disposed on the other side of the base and is used to grind the inner surface of the crucible side wall of the quartz crucible;
  • a grinding part moving mechanism wherein the grinding part is connected to the base through the grinding part moving mechanism, and moves relative to the quartz crucible on the supporting seat through the grinding part moving mechanism.
  • the support seat includes: rollers and roller supports arranged in pairs, both ends of the rollers are mounted on the roller supports, and the quartz crucible is driven to rotate by the pair of rollers.
  • the grinding part includes: a grinding shaft and a grinding head sleeved on the grinding shaft.
  • the grinding section moving mechanism comprises: an X-direction moving module and a Z-direction moving module, wherein the movable end of the X-direction moving module is connected to the grinding section, and the side of the X-direction moving module away from the grinding section is connected to the Z-direction moving module;
  • the Z-direction moving module is connected to the X-direction moving module via a follower connecting piece and drives the X-direction moving module to move;
  • One end of the Z-direction moving module away from the X-direction moving module is arranged on the upper end surface of the base.
  • it further comprises: a support seat moving mechanism, wherein the support seat is connected to the base through the support seat moving mechanism;
  • the support seat moving mechanism comprises: a jacking module, the jacking module is arranged on the lower end surface of the support seat, and the support seat is connected to the base through the jacking module.
  • the above treatment scheme can be used to treat the quartz crucible after the finished product is manufactured. Only one treatment step is added to achieve the effect of removing microparticles on the inner wall of the crucible. There is no need to modify the melting equipment or change the melting process, which can reduce the modification cost and speed up the mass production progress. Without adjusting the traditional crucible making process, the inner surface impurity removal process is innovatively added to avoid the risk of unmelted quartz microparticles on the inner wall of the crucible falling off during use and improve crystallization.
  • the particles on the inner wall of the quartz crucible can be reduced by 85%-95%.
  • the microparticles that have not been removed are tightly bonded to the inner wall, and the risk of falling off during operation is extremely small. This measure greatly improves the cleanliness of the inner wall of the quartz crucible, which is of great advantage in increasing output and reducing production costs.
  • FIG1 is a schematic diagram of a crucible structure according to an embodiment of the present invention.
  • FIG2 is a schematic structural diagram of a grinding mechanism according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a support base moving mechanism and a support base according to an embodiment of the present invention
  • a quartz crucible comprises: a crucible body 100, the crucible body 100 comprises a crucible side wall 110 and a crucible bottom 120, the crucible bottom 120 comprises a bottom 121 and an arc transition portion 122, the arc transition portion 122 is arranged around the bottom 121; a crucible side wall 110 is arranged around the arc transition portion 122, wherein the outermost layer of the inner surface of the crucible side wall 110 is provided with a ground layer, and the thickness of the ground layer ranges from 0.01 mm to 1 mm.
  • a conventional quartz crucible will have a large number of unmelted quartz microparticles during the crystal pulling process.
  • the above-mentioned quartz microparticles are at risk of falling on the inner surface of the crucible, resulting in the quartz microparticles being embedded in the inner wall of the quartz crucible.
  • the grinding thickness is in the range of 0.01mm to 1mm, and the surface roughness of the inner surface of the crucible side wall 110 is controlled to be 1um to 10um.
  • the inner wall of the quartz crucible is removed to be fused quartz microparticles, which improves the use effect of the quartz crucible, reduces the occurrence of abnormal bud breakage during the silicon single crystal pulling process, and improves the quality of the pulled crystal.
  • the present invention also discloses a method for improving the roughness of the inner layer of a quartz crucible to obtain the above-mentioned quartz crucible, wherein the inner surface of the side wall of the crucible is ground by a grinding mechanism.
  • the above-mentioned treatment scheme can be used to treat the quartz crucible after the finished product is manufactured. Only one treatment step is added to achieve the effect of removing microparticles on the inner wall of the crucible. There is no need to modify the melting equipment or change the melting process, which can reduce the modification cost and speed up the mass production progress. Specifically, the following steps are included:
  • the support seat includes: rollers and roller supports arranged in pairs, both ends of the rollers are mounted on the roller supports, and during operation, the quartz crucible is arranged between a pair of rollers. Specifically, the side of the quartz crucible is placed between a pair of rollers, and the side wall of the quartz crucible is arranged in contact with the rollers.
  • the rollers are driven to rotate by a motor, thereby driving the quartz crucible to rotate; in this embodiment, the operating speed of the quartz crucible driven by the rollers is in the range of 10rpm to 30rpm, so as to realize linkage with the grinding part.
  • the grinding part on the grinding mechanism extends from the initial position into the quartz crucible, and the grinding part is adjusted to fit the side wall of the crucible; wherein, the front end of the grinding part extends from the initial position into the junction of the arc transition part and the side wall of the crucible in the quartz crucible, and the inner surface of the crucible side wall of the quartz crucible is ground to remove quartz microparticles on the surface; in this embodiment, the initial position of the grinding part is any position outside the quartz crucible, and no further limitation is made here.
  • the hardness of the grinding part is greater than the hardness of silicon dioxide.
  • the grinding part can be made of a material with a hardness greater than silicon dioxide or directly connected to a grinding head with a hardness greater than silicon dioxide to achieve the removal of microparticles on the inner surface of the crucible side wall; the material of the grinding part can be an alloy or non-alloy with a hardness greater than quartz; similarly, the shape of the grinding part is not limited to a cylindrical shape.
  • step S3 the grinding part is controlled to descend until the grinding part contacts the inner surface of the side wall of the crucible. After the contact, the grinding part slowly moves away from the quartz crucible at a speed ranging from 0.5 mm/s to 5.0 mm/s, and the rotation speed of the grinding part is 1000 rpm to 10000 rpm.
  • the support seat drives the quartz crucible to rotate, and the grinding part moves away from the quartz crucible after the support seat drives the quartz crucible to rotate at least one circle; it can be imagined that in an optional embodiment, the grinding part rotates in the opposite direction to the quartz crucible.
  • the grinding part can be driven to move by the grinding part moving mechanism to achieve the purpose of lowering the grinding part to contact the inner surface of the side wall of the crucible.
  • the support seat can be controlled to carry the quartz crucible up until the grinding part contacts the inner surface of the side wall of the crucible. After the contact, the grinding part slowly moves away from the quartz crucible at a speed ranging from 0.5 mm/s to 5.0 mm/s, and the rotation speed of the grinding part is 1000 rpm to 10000 rpm, so as to achieve the removal of quartz microparticles on the inner surface of the side wall of the crucible.
  • the embodiment of the present application also discloses a grinding mechanism
  • the grinding structure 200 includes: a support seat 210, a grinding part 220 and a grinding part moving mechanism 230.
  • the support seat 210 is arranged on one side of the base 240, and the grinding part 220 is arranged on the base 240 on the opposite side of the support seat 210.
  • the grinding part 220 is connected to the base 240 through the grinding part moving mechanism 230.
  • the quartz crucible is placed on the support seat 210, and the quartz crucible is driven to rotate by the support seat 210.
  • the grinding part moving mechanism 230 drives the grinding part 220 to move relative to the quartz crucible on the support seat 210, and the inner surface of the crucible side wall of the quartz crucible is ground in combination with the rotation of the grinding part 220 itself.
  • the support seat 210 includes: rollers 211 and roller supports 212 arranged in pairs, both ends of the rollers 211 are mounted on the roller supports 212, and the quartz crucible is supported between the pair of rollers 211.
  • the side of the quartz crucible is placed between the pair of rollers, and the crucible side wall of the quartz crucible is arranged in contact with the rollers.
  • the rollers are driven to rotate by a motor, thereby driving the quartz crucible to rotate.
  • the operating speed of the quartz crucible driven by the rollers is within the range of 10-30 rpm, thereby realizing linkage coordination with the grinding part.
  • the grinding part 220 includes: a grinding shaft 221 and a grinding head 222 mounted on the grinding shaft 221.
  • the grinding shaft 221 is driven to rotate by an external motor and then drives the grinding head 222 to rotate.
  • the hardness of the grinding head 222 is greater than the hardness of silicon dioxide.
  • the grinding head 222 can be made of a material with a hardness greater than silicon dioxide or directly connected to a grinding head with a hardness greater than silicon dioxide to achieve the removal of microparticles on the inner surface of the side wall of the crucible.
  • the material of the grinding head 222 can be an alloy or non-alloy with a hardness greater than quartz.
  • the shape of the grinding head 222 is not limited to a cylindrical shape.
  • the grinding section moving mechanism 230 includes: an X-axis moving module 231 and a Z-axis moving module 232.
  • the movable end of the X-axis moving module 231 is connected to the external motor of the grinding section 220.
  • the side of the X-axis moving module 231 away from the grinding section 220 is connected to the Z-axis moving module 232.
  • the Z-axis moving module 232 is connected to the X-axis moving module 231 through a connecting piece and drives the X-axis moving module 231 to move.
  • the end of the Z-axis moving module 232 away from the X-axis moving module 231 is arranged on the upper end surface of the base 240.
  • the Z-direction moving module 232 adopts a Z-direction telescopic cylinder, and the movable end of the Z-direction moving module 232 is connected to the X-direction moving module 231 through a connecting piece.
  • the other end of the Z-direction moving module 232 is arranged on the upper end surface of the base 240 through a connecting frame, wherein the connecting frame is a frame structure that only plays a connecting role and is not further limited here.
  • the X-direction moving module 231 adopts an X-direction telescopic cylinder, and the grinding part 220 is connected to the movable end of the X-direction telescopic cylinder.
  • the X-direction moving module 231 is driven by the Z-direction moving module 232 to make a linear motion in the height direction.
  • the X-direction moving module 231 drives the grinding part 220 to make a linear motion close to or away from the quartz crucible.
  • the position and height of the grinding part are adjusted to facilitate fine grinding operations.
  • the connecting piece only plays a connecting role and is not limited here.
  • the grinding mechanism 200 further includes: a support seat moving mechanism 250, through which the support seat 210 is connected to the base 240; as shown in FIG3 , the support seat moving mechanism 250 includes: a jacking module 251, which is arranged on the lower end surface of the support seat 210, and the support seat 210 is connected to the base through the jacking module 251.
  • the jacking module 251 can be but is not limited to a telescopic cylinder, and the jacking module 251 includes a plurality of telescopic cylinders, and the movable end of the telescopic cylinder is connected to the lower end surface of the support seat 210.
  • the lower end surface of the connecting platform provided on the roller support 212 can be connected to the movable end of the telescopic cylinder, and the other end of the telescopic cylinder is connected to the upper end surface of the base 240.
  • the jacking module 251 the height of the quartz crucible can be adjusted, which is convenient for fine grinding operation.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

本文公布一种石英坩埚及提高石英坩埚内表面粗糙度的方法，包括：坩埚主体，所述坩埚主体包括坩埚侧壁以及坩埚底，所述坩埚底包括底部以及圆弧过渡部，所述圆弧过渡部沿所述底部周向设置有一周；环绕所述圆弧过渡部一周设置有所述侧壁，所述坩埚侧壁的内表面最外层设置有被磨削层，所述被磨削层的厚度从0.01mm到1mm。本申请可以在石英坩埚完成成品制造后进行处理，仅增加一项处理工步即达成成对坩埚内壁微颗粒的去除效果，无需进行熔制设备的改造或更改熔制工艺，可以降低改造成本，加快量产进度。在不对传统制埚工艺进行调整的前提下、创新性增加内表面除杂工艺，避免坩埚内壁未融石英微颗粒在使用过程中的脱落风险。

Description

一种石英坩埚及提高石英坩埚内表面粗糙度的方法
本申请要求于2023年03月30日提交中国专利局、申请号为202310325820.7、申请名称为“一种石英坩埚及提高石英坩埚内表面粗糙度的方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请实施例涉及但不限于太阳能光伏技术领域，具体涉及一种石英坩埚及提高石英坩埚内表面粗糙度的方法。
 背景技术
拉晶用石英坩埚制造过程中，石英坩埚一次成型为成品样式，仅在高度上留有余量，完成熔融后切取上方预留高度，达到规定高度的要求；由于石英坩埚磨具高度要高于成品高度，石英原砂可以正常在上述预留处成型，但电极柱的位置相对固定，石英坩埚制造过程中下方对热量的需求高于上方，且电极柱最高温区域无法升至坩埚上沿处，否则会导致大量热能浪费，且影响坩埚底部熔融效果；由于上述原因、导致在坩埚熔融过程中上沿温度较中下部温度偏低，存在大量未融石英微颗粒，在坩埚熔融完成后，上述石英微颗粒存在掉落在坩埚内表面的风险，导致石英微颗粒镶嵌在石英坩埚内壁。拉制单晶过程中内壁镶嵌的微颗粒存在脱落的风险，增加硅单晶异质成核的风险。
 技术问题
本申请提供一种石英坩埚及提高石英坩埚内表面粗糙度的方法，通过特殊设备配合定制工艺将石英坩埚内壁未融石英微颗粒去除，改善石英坩埚使用效果，降低硅单晶拉制过程中的断苞异常。
 技术解决方案
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
第一方面，一种石英坩埚，包括：坩埚主体，所述坩埚主体包括坩埚侧壁以及坩埚底，所述坩埚底包括底部以及圆弧过渡部，所述圆弧过渡部沿所述底部周向设置有一周；
环绕所述圆弧过渡部一周设置有所述侧壁，所述坩埚侧壁的内表面最外层设置有被磨削层，所述被磨削层的厚度从0.01mm到1mm。
第二方面，本申请还公开了一种提高石英坩埚内表面粗糙度的方法，步骤为：通过磨削机构对坩埚侧壁的内表面进行磨削，得到所述的石英坩埚。
可选地，通过磨削机构对坩埚侧壁的内表面进行磨削的步骤包括：
将石英坩埚放置于所述磨削机构的支撑座上，通过所述支撑座带动所述石英坩埚旋转；
磨削机构上的磨削部由初始位置伸入所述石英坩埚内，调整所述磨削部与所述坩埚侧壁贴合；
当所述磨削部与所述坩埚侧壁贴合后，所述支撑座带动所述石英坩埚旋转，磨削部以预设速度向背离所述石英坩埚的方向移动，直至所述磨削部脱离所述坩埚内壁，完成打磨。
可选地，所述支撑座包括：成对设置的辊筒以及辊筒支座，所述辊筒的两端均套装在所述辊筒支座上，通过一对所述辊筒带动所述石英坩埚旋转；
所述石英坩埚的设置于一对所述辊筒之间，所述辊筒带动所述石英坩埚的运转速度从10rpm到30rpm。
可选地，所述磨削部的前端由初始位置伸入所述石英坩埚中圆弧过渡部与所述坩埚侧壁的交界处。
可选地，所述磨削部的硬度大于二氧化硅的硬度。
可选地，控制所述磨削部下降直至所述磨削部与所述坩埚侧壁的内表面接触，接触后磨削部以从0.5mm/s到5.0mm/s范围内的速度缓慢向背离所述石英坩埚的方向移动，所述磨削部的自转速度从1000rpm到10000rpm。
可选地，控制所述支撑座承载所述石英坩埚上升直至所述磨削部与所述坩埚侧壁的内表面接触，接触后磨削部以从0.5mm/s到5.0mm/s范围内的速度缓慢向背离所述石英坩埚的方向移动，所述磨削部的自转速度为从1000rpm到10000rpm。
第三方面，本申请还公开了一种磨削机构，包括：
支撑座，所述支撑座设置于底座的一侧，用于支撑并带动石英坩埚旋转；
磨削部，所述磨削部设置于所述底座的另一侧，用于对所述石英坩埚的坩埚侧壁的内表面进行磨削；
磨削部移动机构，所述磨削部通过所述磨削部移动机构连接于所述底座，并通过所述磨削部移动机构相对于所述支撑座上的所述石英坩埚运动。
可选地，所述支撑座包括：成对设置的辊筒以及辊筒支座，所述辊筒的两端均套装在所述辊筒支座上，通过一对所述辊筒带动所述石英坩埚旋转。
可选地，所述磨削部包括：磨削转轴以及套设于所述磨削转轴上的磨头。
可选地，所述磨削部移动机构包括：X向移动模组和Z向移动模组，所述X向移动模组的活动端连接所述磨削部，所述X向移动模组背离所述磨削部的一侧连接所述Z向移动模组；
所述Z向移动模组通过随动连接件连接所述X向移动模组并带动所述X向移动模组移动；
所述Z向移动模组背离所述X向移动模组的一端设置于所述底座的上端面。
可选地，还包括：支撑座移动机构，所述支撑座通过所述支撑座移动机构连接所述底座；
所述支撑座移动机构包括：顶升模组，所述顶升模组设置于所述支撑座的下端面，所述支撑座通过所述顶升模组连接所述底座。
 有益效果
相较于现有技术，采用上述处理方案，可以在石英坩埚完成成品制造后进行处理，仅增加一项处理工步即达成成对坩埚内壁微颗粒的去除效果，无需进行熔制设备的改造或更改熔制工艺，可以降低改造成本，加快量产进度。在不对传统制埚工艺进行调整的前提下、创新性增加内表面除杂工艺，避免坩埚内壁未融石英微颗粒在使用过程中的脱落风险，改善成晶。
使用该工艺后，可降低内壁石英坩埚颗粒物85%-95%，部位未清除微颗粒与内壁结合紧密、运行过程中脱落风险极小，该举措极大的提高了石英坩埚内壁的洁净度，对提升产量、降低生产成本有极大优势。
 附图说明
图1是本发明一种实施例的坩埚结构示意图；
图2是本发明一种实施例的磨削机构的结构示意图；
图3是本发明一种实施例的支撑座移动机构与支撑座的结构示意图；
附图标记，100、坩埚主体；110、坩埚侧壁；120、坩埚底；121、底部；122、圆弧过渡部；200、磨削结构；210、支撑座；220、磨削部；230、磨削部移动机构；240、底座；250、支撑座移动机构；211、辊筒；212、辊筒支座；221、磨削转轴；222、磨头；231、X向移动模组；232、Z向移动模组；251、顶升模组。
 本申请的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。
第一方面，如图1所示，一种石英坩埚，包括：坩埚主体100，坩埚主体100包括坩埚侧壁110以及坩埚底120，坩埚底120包括底部121以及圆弧过渡部122，圆弧过渡部122沿底部121周向设置有一周；环绕圆弧过渡部122一周设置有坩埚侧壁110，其中坩埚侧壁110的内表面的最外层设置有被磨削层，该被磨削层的厚度从0.01mm到1mm。常规石英坩埚在拉晶过程中会存在大量未融石英微颗粒，在坩埚熔融完成后，上述石英微颗粒存在掉落在坩埚内表面的风险，导致石英微颗粒镶嵌在石英坩埚内壁。拉制单晶过程中内壁镶嵌的微颗粒存在脱落的风险，增加硅单晶异质成核的风险；在本实施例中，通过对坩埚侧壁110的内表面的被磨削层进行打磨，其被磨削的厚度为0.01mm到1mm的范围，控制坩埚侧壁110的内表面的表面粗糙度为1um至10um。去除了石英坩埚内壁为融石英微颗粒，改善了石英坩埚的使用效果，降低硅单晶拉制过程中断苞异常的发生，提高了拉晶质量。
第二方面，本发明还公开了一种提高石英坩埚内层粗糙度的方法制得上述石英坩埚，通过磨削机构对坩埚侧壁的内表面进行磨削，采用上述处理方案，可以在石英坩埚完成成品制造后进行处理，仅增加一项处理工步即达成成对坩埚内壁微颗粒的去除效果，无需进行熔制设备的改造或更改熔制工艺，可以降低改造成本，加快量产进度。具体包括以下步骤：
S1：将石英坩埚放置于磨削机构的支撑座上，通过支撑座带动石英坩埚旋转。其中，支撑座包括：成对设置的辊筒以及辊筒支座，辊筒的两端均套装在辊筒支座上，在工作过程中，石英坩埚设置在一对辊筒之间，具体的，石英坩埚的侧放在一对辊筒之间，石英坩埚的坩埚侧壁与辊筒接触设置，通过电机驱动辊筒旋转，进而带动石英坩埚旋转；在本实施例中，辊筒带动石英坩埚的运转速度从10rpm到30rpm范围内取值，实现与磨削部的联动配合。
S2：磨削机构上的磨削部由初始位置伸入石英坩埚内，调整磨削部与坩埚侧壁贴合；其中，磨削部的前端由初始位置伸入石英坩埚中圆弧过渡部与坩埚侧壁的交界处，对石英坩埚的坩埚侧壁的内表面进行磨削，去除表面的石英微颗粒；本实施例中磨削部所处的初始位置为位于石英坩埚外的任意位置，在此不多做限定。
可以想到的，为了实现磨削，磨削部的硬度大于二氧化硅的硬度，具体的，磨削部可采用硬度大于二氧化硅的材料制成或者直接外接硬度大于二氧化硅的磨头，实现将坩埚侧壁的内表面微颗粒的去除；磨削部的材料可选取硬度大于石英的合金或非合金均可；同样的，磨削部的形状不限于圆柱形。
S3：当磨削部与坩埚侧壁接触后，支撑座带动石英坩埚旋转，磨削部以预设速度向背离石英坩埚的方向移动，直至磨削部脱离坩埚内壁，完成打磨。
在步骤S3中，通过控制磨削部下降直至磨削部与坩埚侧壁的内表面接触，接触后磨削部以0.5mm/s到5.0mm/s范围的速度缓慢向背离石英坩埚的方向移动，磨削部的自转速度为1000rpm至10000rpm。在此过程中，支撑座带动石英坩埚旋转，且磨削部在支撑座带动石英坩埚至少旋转一周后，磨削部向背离石英坩埚的方向移动；可以想到的，在可选的实施例中，磨削部与石英坩埚反方向旋转。在本实施例中，可通过磨削部移动机构带动磨削部移动，实现将磨削部下降至与坩埚侧壁的内表面接触。
一些可替换的实施例中，可以通过控制支撑座承载石英坩埚上升直至磨削部与坩埚侧壁的内表面接触，接触后磨削部以0.5mm/到5.0mm/s范围的速度缓慢向背离石英坩埚的方向移动，磨削部的自转速度为1000rpm至10000rpm，实现对坩埚侧壁内表面石英微颗粒的去除。
第三方面，本申请实施例还公开了一种磨削机构，磨削结构200包括：支撑座210、磨削部220和磨削部移动机构230，在底座240的一侧设置有支撑座210，在底座240上支撑座210的对侧设置有磨削部220，磨削部220通过磨削部移动机构230与底座240连接，在磨削过程中，将石英坩埚放置于支撑座210上，并通过支撑座210带动石英坩埚旋转，通过磨削部移动机构230带动磨削部220相对于支撑座210上的石英坩埚运动，结合磨削部220本身的自转，对所述石英坩埚的坩埚侧壁的内表面进行磨削。
如图3所示中，支撑座210包括：成对设置的辊筒211以及辊筒支座212，辊筒211的两端均套装在辊筒支座212上，石英坩埚支设在一对辊筒211之间，具体的，石英坩埚的侧放在一对辊筒之间，石英坩埚的坩埚侧壁与辊筒接触设置，通过电机驱动辊筒旋转，进而带动石英坩埚旋转；在本实施例中，辊筒带动石英坩埚的运转速度在10-30rpm范围内取值，实现与磨削部的联动配合。
如图2所示中，磨削部220包括：磨削转轴221以及套设于磨削转轴221上的磨头222，磨削转轴221通过外置电机驱动旋转进而带动磨头222旋转；在本实施例中，为了实现磨削，磨头222的硬度大于二氧化硅的硬度，具体的，磨头222可采用硬度大于二氧化硅的材料制成或者直接外接硬度大于二氧化硅的磨头，实现将坩埚侧壁的内表面微颗粒的去除；磨头222的材料可选取硬度大于石英的合金或非合金均可；同样的，磨头222的形状不限于圆柱形。
如图2所示中，磨削部移动机构230包括：X向移动模组231和Z向移动模组232，X向移动模组231的活动端连接磨削部220的外置电机，X向移动模组231背离磨削部220的一侧连接Z向移动模组232，Z向移动模组232通过连接件连接X向移动模组231并带动X向移动模组231移动，Z向移动模组232背离X向移动模组231的一端设置于底座240的上端面。
在本实施例中，Z向移动模组232采用Z向伸缩气缸，Z向移动模组232的活动端通过连接件连接X向移动模组231，同时Z向移动模组232的另一端通过连接架设置在底座240的上端面，其中，连接架为仅起到连接作用的框架结构，在此不多做限定。
在本实施例中，X向移动模组231采用X向伸缩气缸，在X向伸缩气缸的活动端连接磨削部220，通过Z向移动模组232带动X向移动模组231做高度方向的直线运动，同时X向移动模组231带动磨削部220做靠近或背离石英坩埚方向的直线运动，在此过程中，实现对磨削部位置以及高度的调整，便于进行精细化磨削操作。其中，连接件仅起到连接作用，在此不多做限定。
在一些可替换的实施例中，磨削机构200还包括：支撑座移动机构250，支撑座210通过支撑座移动机构250连接底座240；如图3所示中，支撑座移动机构250包括：顶升模组251，顶升模组251设置于支撑座210的下端面，支撑座210通过顶升模组251连接底座。其中，顶升模组251可以但不限于伸缩气缸，顶升模组251包括多个伸缩气缸，伸缩气缸的活动端连接支撑座210的下端面，具体的，可以辊筒支座212设置的连接平台的下端面连接伸缩气缸的活动端，伸缩气缸的另一端连接在底座240的上端面。通过顶升模组251的设置，可以实现对石英坩埚高度的调整，便于进行精细化磨削操作。
以上对本申请所提供的一种石英坩埚及提高石英坩埚内表面粗糙度的方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (13)

  1. 一种石英坩埚，其中，包括：坩埚主体，所述坩埚主体包括坩埚侧壁以及坩埚底，所述坩埚底包括底部以及圆弧过渡部，所述圆弧过渡部沿所述底部周向设置有一周；
    环绕所述圆弧过渡部一周设置有所述侧壁，所述坩埚侧壁的内表面最外层设置有被磨削层，所述被磨削层的厚度从0.01mm到1mm。
  2. 一种提高石英坩埚内表面粗糙度的方法，其中，步骤为：通过磨削机构对坩埚侧壁的内表面进行磨削，得到如权利要求1所述的石英坩埚。
  3. 根据权利要求2所述的一种提高石英坩埚内表面粗糙度的方法，其中：通过磨削机构对坩埚侧壁的内表面进行磨削的步骤包括：
    将石英坩埚放置于所述磨削机构的支撑座上，通过所述支撑座带动所述石英坩埚旋转；
    磨削机构上的磨削部由初始位置伸入所述石英坩埚内，调整所述磨削部与所述坩埚侧壁贴合；
    当所述磨削部与所述坩埚侧壁贴合后，所述支撑座带动所述石英坩埚旋转，磨削部以预设速度向背离所述石英坩埚的方向移动，直至所述磨削部脱离所述坩埚内壁，完成打磨。
  4. 根据权利要求3所述的一种提高石英坩埚内表面粗糙度的方法，其中，所述支撑座包括：成对设置的辊筒以及辊筒支座，所述辊筒的两端均套装在所述辊筒支座上，通过一对所述辊筒带动所述石英坩埚旋转；所述石英坩埚的设置于一对所述辊筒之间。
  5. 根据权利要求4所述的一种提高石英坩埚内表面粗糙度的方法，其中，所述辊筒带动所述石英坩埚的运转速度从10rpm到30rpm。
  6. 根据权利要求3所述的一种提高石英坩埚内表面粗糙度的方法，其中：所述磨削部的前端由初始位置伸入所述石英坩埚中圆弧过渡部与所述坩埚侧壁的交界处。
  7. 根据权利要求3所述的一种提高石英坩埚内表面粗糙度的方法，其中：所述磨削部的硬度大于二氧化硅的硬度。
  8. 根据权利要求3所述的一种提高石英坩埚内表面粗糙度的方法，其中：控制所述磨削部下降直至所述磨削部与所述坩埚侧壁的内表面接触，接触后磨削部以从0.5mm/s到5.0mm/s范围内的速度缓慢向背离所述石英坩埚的方向移动，所述磨削部的自转速度从1000rpm到10000rpm。
  9. 根据权利要求3所述的一种提高石英坩埚内表面粗糙度的方法，其中：控制所述支撑座承载所述石英坩埚上升直至所述磨削部与所述坩埚侧壁的内表面接触，接触后磨削部以从0.5mm/s到5.0mm/s范围内的速度缓慢向背离所述石英坩埚的方向移动，所述磨削部的自转速度从1000rpm到10000rpm。
  10. 一种磨削机构，其中，包括：
    支撑座，所述支撑座设置于底座的一侧，用于支撑并带动石英坩埚旋转；
    磨削部，所述磨削部设置于所述底座的另一侧，用于对所述石英坩埚的坩埚侧壁的内表面进行磨削；
    磨削部移动机构，所述磨削部通过所述磨削部移动机构连接于所述底座，并通过所述磨削部移动机构相对于所述支撑座上的所述石英坩埚运动。
  11. 根据权利要求10所述的一种磨削机构，其中，所述支撑座包括：成对设置的辊筒以及辊筒支座，所述辊筒的两端均套装在所述辊筒支座上，通过一对所述辊筒带动所述石英坩埚旋转；
    所述磨削部包括：磨削转轴以及套设于所述磨削转轴上的磨头；
    所述磨削部移动机构包括：X向移动模组和Z向移动模组，所述X向移动模组的活动端连接所述磨削部，所述X向移动模组背离所述磨削部的一侧连接所述Z向移动模组；所述Z向移动模组通过随动连接件连接所述X向移动模组并带动所述X向移动模组移动；所述Z向移动模组背离所述X向移动模组的一端设置于所述底座的上端面。
  12. 根据权利要求10所述的一种磨削机构，其中，还包括：支撑座移动机构，所述支撑座通过所述支撑座移动机构连接所述底座。
  13. 根据权利要求12所述的一种磨削机构，其中，所述支撑座移动机构包括：顶升模组，所述顶升模组设置于所述支撑座的下端面，所述支撑座通过所述顶升模组连接所述底座。
PCT/CN2024/072104 2023-03-30 2024-01-12 一种石英坩埚及提高石英坩埚内表面粗糙度的方法 WO2024198638A1 (zh)

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